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Publication of TW200721499ApublicationCriticalpatent/TW200721499A/en
Systems and methods for enhancing performance of a hydrogenation treatment are provided. A representative system comprises a thin film transistor (TFT) comprising a substrate, a diffusion barrier layer positioned on the substrate, a pad layer positioned on the diffusion barrier layer, and a polysilicon layer positioned on the pad layer, a gate insulating layer positioned on the polysilicon layer. The thickness of the pad layer is equal to or less than the thickness of the diffusion barrier layer. The diffusion barrier layer retards hydrogen atoms from diffusing from the silicon layer.
TW094142110A2005-11-302005-11-30Systems and methods involving thin film transistors
TWI268619B
(en)