IT1282087B1 - Dispositivo di memoria a semiconduttore e metodo per fabbricare il medesimo - Google Patents

Dispositivo di memoria a semiconduttore e metodo per fabbricare il medesimo

Info

Publication number
IT1282087B1
IT1282087B1 IT96MI000141A ITMI960141A IT1282087B1 IT 1282087 B1 IT1282087 B1 IT 1282087B1 IT 96MI000141 A IT96MI000141 A IT 96MI000141A IT MI960141 A ITMI960141 A IT MI960141A IT 1282087 B1 IT1282087 B1 IT 1282087B1
Authority
IT
Italy
Prior art keywords
manufacturing
same
memory device
semiconductor memory
semiconductor
Prior art date
Application number
IT96MI000141A
Other languages
English (en)
Inventor
Ema Taiji
Anezaki Tohru
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of ITMI960141A0 publication Critical patent/ITMI960141A0/it
Publication of ITMI960141A1 publication Critical patent/ITMI960141A1/it
Application granted granted Critical
Publication of IT1282087B1 publication Critical patent/IT1282087B1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT96MI000141A 1995-01-31 1996-01-26 Dispositivo di memoria a semiconduttore e metodo per fabbricare il medesimo IT1282087B1 (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1374895 1995-01-31
JP31073795A JP3623834B2 (ja) 1995-01-31 1995-11-29 半導体記憶装置及びその製造方法

Publications (3)

Publication Number Publication Date
ITMI960141A0 ITMI960141A0 (it) 1996-01-26
ITMI960141A1 ITMI960141A1 (it) 1997-07-26
IT1282087B1 true IT1282087B1 (it) 1998-03-12

Family

ID=26349588

Family Applications (1)

Application Number Title Priority Date Filing Date
IT96MI000141A IT1282087B1 (it) 1995-01-31 1996-01-26 Dispositivo di memoria a semiconduttore e metodo per fabbricare il medesimo

Country Status (4)

Country Link
US (2) US5874756A (it)
JP (1) JP3623834B2 (it)
KR (2) KR100254965B1 (it)
IT (1) IT1282087B1 (it)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4190760B2 (ja) * 1995-01-31 2008-12-03 富士通マイクロエレクトロニクス株式会社 半導体装置
JP2008263211A (ja) * 1995-01-31 2008-10-30 Fujitsu Ltd 半導体装置
US6744091B1 (en) * 1995-01-31 2004-06-01 Fujitsu Limited Semiconductor storage device with self-aligned opening and method for fabricating the same
US6420725B1 (en) * 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US5616792A (en) * 1996-02-01 1997-04-01 Amoco Corporation Catalytic purification of dicarboxylic aromatic acid
US5756833A (en) * 1996-02-01 1998-05-26 Amoco Corporation Catalytic purification and recovery of dicarboxylic aromatic acids
US6686288B1 (en) * 1996-02-21 2004-02-03 Micron Technology, Inc. Integrated circuit having self-aligned CVD-tungsten/titanium contact plugs strapped with metal interconnect and method of manufacture
US6653733B1 (en) 1996-02-23 2003-11-25 Micron Technology, Inc. Conductors in semiconductor devices
JP3941133B2 (ja) * 1996-07-18 2007-07-04 富士通株式会社 半導体装置およびその製造方法
US6015977A (en) 1997-01-28 2000-01-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
US6214727B1 (en) 1997-02-11 2001-04-10 Micron Technology, Inc. Conductive electrical contacts, capacitors, DRAMs, and integrated circuitry, and methods of forming conductive electrical contacts, capacitors, DRAMs, and integrated circuitry
JP2943914B2 (ja) * 1997-02-19 1999-08-30 日本電気株式会社 半導体装置およびその製造方法
US6063656A (en) * 1997-04-18 2000-05-16 Micron Technology, Inc. Cell capacitors, memory cells, memory arrays, and method of fabrication
JPH10321624A (ja) * 1997-05-20 1998-12-04 Toshiba Corp 半導体装置の製造方法
KR100356826B1 (ko) * 1997-05-29 2004-05-17 주식회사 하이닉스반도체 반도체장치 및 그의 제조방법
JP2006245625A (ja) * 1997-06-20 2006-09-14 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH1140766A (ja) 1997-07-16 1999-02-12 Fujitsu Ltd 半導体装置、ｄｒａｍ、フラッシュメモリ、およびその製造方法
JPH11233737A (ja) 1998-02-10 1999-08-27 Fujitsu Ltd 半導体装置及びその製造方法
KR100281892B1 (ko) * 1998-03-10 2001-03-02 윤종용 광역평탄화된반도체장치의제조방법
KR100285698B1 (ko) * 1998-07-13 2001-04-02 윤종용 반도체장치의제조방법
JP3931445B2 (ja) * 1998-09-10 2007-06-13 株式会社日立製作所 半導体装置の製造方法
US6734564B1 (en) * 1999-01-04 2004-05-11 International Business Machines Corporation Specially shaped contact via and integrated circuit therewith
JP2000232207A (ja) * 1999-02-10 2000-08-22 Nec Corp 半導体装置およびその製造方法
JP3296324B2 (ja) 1999-04-07 2002-06-24 日本電気株式会社 半導体メモリ装置の製造方法
US6344389B1 (en) 1999-04-19 2002-02-05 International Business Machines Corporation Self-aligned damascene interconnect
US6589876B1 (en) * 1999-07-22 2003-07-08 Micron Technology, Inc. Methods of forming conductive capacitor plugs, methods of forming capacitor contact openings, and methods of forming memory arrays
US6458649B1 (en) 1999-07-22 2002-10-01 Micron Technology, Inc. Methods of forming capacitor-over-bit line memory cells
US6159818A (en) * 1999-09-02 2000-12-12 Micron Technology, Inc. Method of forming a container capacitor structure
FR2800199B1 (fr) * 1999-10-21 2002-03-01 St Microelectronics Sa Fabrication de memoire dram
KR100317331B1 (ko) * 1999-11-11 2001-12-24 박종섭 불휘발성 강유전체 메모리 소자 및 그 제조방법
US6563156B2 (en) 2001-03-15 2003-05-13 Micron Technology, Inc. Memory elements and methods for making same
US6498088B1 (en) 2000-11-09 2002-12-24 Micron Technology, Inc. Stacked local interconnect structure and method of fabricating same
US6642584B2 (en) * 2001-01-30 2003-11-04 International Business Machines Corporation Dual work function semiconductor structure with borderless contact and method of fabricating the same
JP3989697B2 (ja) * 2001-05-30 2007-10-10 富士通株式会社 半導体装置及び半導体装置の位置検出方法
FR2828766B1 (fr) * 2001-08-16 2004-01-16 St Microelectronics Sa Circuit integre comprenant des elements actifs et au moins un element passif, notamment des cellules memoire dram et procede de fabrication
FR2828763B1 (fr) * 2001-08-16 2004-01-16 St Microelectronics Sa Circuit integre, notamment cellule memoire dram avec contact a faible facteur de forme et procede de fabrication
FR2828764B1 (fr) * 2001-08-16 2004-01-23 St Microelectronics Sa Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuit
JP2003163283A (ja) * 2001-11-27 2003-06-06 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置
FR2832854B1 (fr) 2001-11-28 2004-03-12 St Microelectronics Sa Fabrication de memoire dram et de transistor mos
US7317208B2 (en) * 2002-03-07 2008-01-08 Samsung Electronics Co., Ltd. Semiconductor device with contact structure and manufacturing method thereof
US7125781B2 (en) * 2003-09-04 2006-10-24 Micron Technology, Inc. Methods of forming capacitor devices
JP4908748B2 (ja) * 2003-09-22 2012-04-04 三星電子株式会社 半導体素子を製造するためのエッチング方法
US7005379B2 (en) * 2004-04-08 2006-02-28 Micron Technology, Inc. Semiconductor processing methods for forming electrical contacts
JP4074292B2 (ja) * 2005-01-17 2008-04-09 株式会社東芝 半導体装置及びその製造方法
US7768014B2 (en) * 2005-01-31 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method thereof
KR100724568B1 (ko) * 2005-10-12 2007-06-04 삼성전자주식회사 반도체 메모리 소자 및 그 제조방법
JP2006191137A (ja) * 2006-02-23 2006-07-20 Renesas Technology Corp 半導体集積回路装置の製造方法
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
JP2008034866A (ja) * 2007-09-18 2008-02-14 Toshiba Corp 半導体装置
JP4533919B2 (ja) * 2007-09-18 2010-09-01 株式会社東芝 不揮発性半導体メモリの製造方法
KR20120019262A (ko) * 2010-08-25 2012-03-06 삼성전자주식회사 반도체 소자 및 이를 제조하는 방법
KR101153815B1 (ko) * 2010-11-16 2012-06-14 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
JP2011049601A (ja) * 2010-12-03 2011-03-10 Renesas Electronics Corp 半導体装置
JP5991729B2 (ja) 2011-10-07 2016-09-14 キヤノン株式会社 固体撮像装置の製造方法
US9076680B2 (en) 2011-10-18 2015-07-07 Micron Technology, Inc. Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array
US8946043B2 (en) 2011-12-21 2015-02-03 Micron Technology, Inc. Methods of forming capacitors
KR101709810B1 (ko) * 2012-06-14 2017-03-08 삼성전기주식회사 고주파 인덕터의 제조방법
KR102437295B1 (ko) * 2015-11-09 2022-08-30 삼성전자주식회사 반도체 소자의 제조 방법
WO2017217132A1 (ja) * 2016-06-15 2017-12-21 ソニー株式会社 半導体装置、及び、半導体装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0673368B2 (ja) * 1985-01-31 1994-09-14 富士通株式会社 半導体記憶装置およびその製造方法
US5196910A (en) * 1987-04-24 1993-03-23 Hitachi, Ltd. Semiconductor memory device with recessed array region
JP2932540B2 (ja) * 1989-11-28 1999-08-09 ソニー株式会社 半導体メモリ装置
US5150278A (en) 1991-04-16 1992-09-22 J. E. Thomas Specialties Limited Finned housing
JPH0629483A (ja) * 1991-04-29 1994-02-04 Micron Technol Inc スタック型ｉセルキャパシタおよびその製造方法
US5110754A (en) * 1991-10-04 1992-05-05 Micron Technology, Inc. Method of making a DRAM capacitor for use as an programmable antifuse for redundancy repair/options on a DRAM
KR940006682B1 (ko) * 1991-10-17 1994-07-25 삼성전자 주식회사 반도체 메모리장치의 제조방법
US5150276A (en) * 1992-01-24 1992-09-22 Micron Technology, Inc. Method of fabricating a vertical parallel cell capacitor having a storage node capacitor plate comprising a center fin effecting electrical communication between itself and parallel annular rings
US5292677A (en) * 1992-09-18 1994-03-08 Micron Technology, Inc. Reduced mask CMOS process for fabricating stacked capacitor multi-megabit dynamic random access memories utilizing single etch stop layer for contacts
US5605857A (en) * 1993-02-12 1997-02-25 Micron Technology, Inc. Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells

Also Published As

Publication number Publication date
US5874756A (en) 1999-02-23
KR100354296B1 (ko) 2002-09-28
KR960030423A (ko) 1996-08-17
KR100254965B1 (ko) 2000-05-01
US6395599B1 (en) 2002-05-28
JPH08274278A (ja) 1996-10-18
ITMI960141A1 (it) 1997-07-26
ITMI960141A0 (it) 1996-01-26
JP3623834B2 (ja) 2005-02-23

Similar Documents

Publication Publication Date Title
IT1282087B1 (it) Dispositivo di memoria a semiconduttore e metodo per fabbricare il medesimo
KR960009110A (ko) 반도체 장치 및 그 제조방법
KR950034612A (ko) 반도체 구조물 및 그 제조 방법
KR960012575A (ko) 반도체 장치 제조 방법
KR960009107A (ko) 반도체장치와 그 제조방법
KR970004015A (ko) 반도체장치 및 그의 제조방법
KR960015900A (ko) 반도체 장치 및 그 제조방법
KR960012496A (ko) 반도체기억장치 및 그 제조방법
KR960012574A (ko) 반도체장치 제조방법
FI952719A (fi) Menetelmä puolijohdelaitteen valmistamiseksi
KR960012313A (ko) 반도체 장치 및 그 제조방법
DE69637900D1 (de) Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren
FI954241A (fi) Puolijohdelaitteen valmistusmenetelmä
KR970004011A (ko) 반도체기억장치 및 그 제조방법
DE69625007D1 (de) Halbleiterelement-Herstellungsverfahren
FI956099A (fi) Menetelmä puolijohdelaitteen valmistamiseksi
KR970004195A (ko) 반도체 레이저장치 및 그 제조방법
KR960012450A (ko) 반도체 장치 및 그의 제조 방법
KR960015805A (ko) 반도체 장치의 제조 방법
KR960012378A (ko) 반도체 장치의 제조방법과 그에 의해 제조된 반도체 장치
KR960012536A (ko) 비휘발성 반도체 메모리 장치 및 그의 제조 방법
KR970004171A (ko) 반도체장치 및 그 제조방법
EP0707317A3 (en) Semiconductor memory device and method of manufacturing
KR960009211A (ko) 반도체장치의 제조방법
KR970004006A (ko) 반도체 소자의 캐패시터 제조 방법

Legal Events

Date Code Title Description
0001 Granted