JP5991729B2 - 固体撮像装置の製造方法 - Google Patents
固体撮像装置の製造方法 Download PDFInfo
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- JP5991729B2 JP5991729B2 JP2011223456A JP2011223456A JP5991729B2 JP 5991729 B2 JP5991729 B2 JP 5991729B2 JP 2011223456 A JP2011223456 A JP 2011223456A JP 2011223456 A JP2011223456 A JP 2011223456A JP 5991729 B2 JP5991729 B2 JP 5991729B2
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- insulating film
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- 238000000034 method Methods 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 238000003384 imaging method Methods 0.000 title claims description 39
- 238000005530 etching Methods 0.000 claims description 67
- 239000004065 semiconductor Substances 0.000 claims description 58
- 230000002093 peripheral effect Effects 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 35
- 238000009792 diffusion process Methods 0.000 description 23
- 229910021332 silicide Inorganic materials 0.000 description 18
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 18
- 239000003870 refractory metal Substances 0.000 description 15
- 239000012535 impurity Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910021357 chromium silicide Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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- General Chemical & Material Sciences (AREA)
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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Description
Claims (7)
- 光電変換部を含む画素を有する画素領域を含む第1領域と、前記画素から信号を読み出すための周辺回路領域を含む第2領域とを有する固体撮像装置の製造方法であって、
前記第1領域および前記第2領域を有する半導体基板と、前記半導体基板の前記第1領域の上に配置された第1絶縁膜と、前記第1絶縁膜の上に配置された第2絶縁膜と、前記第2絶縁膜の上に配置された第3絶縁膜と、前記半導体基板の前記第2領域の上に配置された第4絶縁膜と、前記第4絶縁膜の上に配置された第5絶縁膜と、前記第5絶縁膜の上に配置された第6絶縁膜と、を有する構造体を準備する工程と、
前記第1絶縁膜、前記第2絶縁膜および前記第3絶縁膜を貫通する第1コンタクトホールを形成する第1開口工程と、
前記第4絶縁膜、前記第5絶縁膜および前記第6絶縁膜を貫通する第2コンタクトホールを形成する第2開口工程と、を含み、
前記第1開口工程と前記第2開口工程とは別々に実施され、
前記第1絶縁膜、前記第3絶縁膜、前記第4絶縁膜および前記第6絶縁膜は、第1組成を有し、前記第2絶縁膜および前記第5絶縁膜は、前記第1組成とは異なる第2組成を有し、
前記第1開口工程では、前記第2絶縁膜をエッチングストッパとして前記第3絶縁膜をエッチングした後に、前記第2絶縁膜および前記第1絶縁膜を互いに異なるエッチング条件でエッチングすることによって前記第1コンタクトホールを形成し、
前記第2開口工程では、前記第5絶縁膜をエッチングストッパとして前記第6絶縁膜をエッチングした後に、前記第5絶縁膜および前記第4絶縁膜を同一のエッチング条件で連続的にエッチングすることによって前記第2コンタクトホールを形成する、
ことを特徴とする固体撮像装置の製造方法。 - 前記第2開口工程は、前記第1コンタクトホールにコンタクトプラグが形成された後に実施される、
ことを特徴とする請求項1に記載の固体撮像装置の製造方法。 - 前記第1開口工程は、前記第2コンタクトホールにコンタクトプラグが形成された後に実施される、
ことを特徴とする請求項1に記載の固体撮像装置の製造方法。 - 前記第1絶縁膜、前記第3絶縁膜、前記第4絶縁膜および前記第6絶縁膜は、シリコン酸化膜であり、前記第2絶縁膜および前記第5絶縁膜は、シリコン窒化膜である、
ことを特徴とする請求項1乃至3のいずれか1項に記載の固体撮像装置の製造方法。 - 前記第1開口工程は、
前記第3絶縁膜の上に形成された第1フォトレジストパターンを使って前記第3絶縁膜をエッチングして前記第3絶縁膜に開口を形成する工程と、
前記第3絶縁膜のエッチングの後に前記第1フォトレジストパターンを除去する工程と、
前記第1フォトレジストパターンを除去した後に前記第3絶縁膜に形成された前記開口を通して前記第2絶縁膜および前記第1絶縁膜を互いに異なるエッチング条件でエッチングする工程と、を含む、
ことを特徴とする請求項1乃至4のいずれか1項に記載の固体撮像装置の製造方法。 - 前記第2開口工程は、
前記第6絶縁膜の上に形成された第2フォトレジストパターンを使って前記第6絶縁膜をエッチングして前記第6絶縁膜に開口を形成する工程と、
前記第6絶縁膜のエッチングの後に前記第2フォトレジストパターンを除去する工程と、
前記第2フォトレジストパターンを除去した後に前記第6絶縁膜に形成された前記開口を通して前記第5絶縁膜および前記第4絶縁膜を同一のエッチング条件で連続的にエッチングする工程と、を含む、
ことを特徴とする請求項1乃至5のいずれか1項に記載の固体撮像装置の製造方法。 - 前記第2開口工程では、シリサイド化された金属、または、金属を露出させるように前記第2コンタクトホールを形成する、
ことを特徴とする請求項1乃至6のいずれか1項に記載の固体撮像装置の製造方法。
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JP6274729B2 (ja) * | 2013-02-04 | 2018-02-07 | キヤノン株式会社 | 固体撮像装置およびカメラ |
CN103633106B (zh) * | 2013-11-28 | 2016-06-29 | 上海华力微电子有限公司 | Cmos感光器件接触孔刻蚀方法及cmos感光器件制造方法 |
JP2015109343A (ja) * | 2013-12-04 | 2015-06-11 | キヤノン株式会社 | 半導体装置の製造方法 |
JP2015109342A (ja) * | 2013-12-04 | 2015-06-11 | キヤノン株式会社 | 撮像装置の製造方法 |
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JP6664353B2 (ja) * | 2017-07-11 | 2020-03-13 | キヤノン株式会社 | 光電変換装置、光電変換装置を備えた機器、光電変換装置の製造方法 |
CN110047862B (zh) * | 2019-04-29 | 2021-04-30 | 上海华力微电子有限公司 | Cmos图像传感器的形成方法 |
JP2021111692A (ja) * | 2020-01-10 | 2021-08-02 | パナソニックIpマネジメント株式会社 | 撮像装置および撮像装置の製造方法 |
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