FI956099A - Menetelmä puolijohdelaitteen valmistamiseksi - Google Patents
Menetelmä puolijohdelaitteen valmistamiseksi Download PDFInfo
- Publication number
- FI956099A FI956099A FI956099A FI956099A FI956099A FI 956099 A FI956099 A FI 956099A FI 956099 A FI956099 A FI 956099A FI 956099 A FI956099 A FI 956099A FI 956099 A FI956099 A FI 956099A
- Authority
- FI
- Finland
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/10—Lift-off masking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6317019A JPH08172102A (ja) | 1994-12-20 | 1994-12-20 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FI956099A0 FI956099A0 (fi) | 1995-12-19 |
FI956099A true FI956099A (fi) | 1996-06-21 |
Family
ID=18083517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI956099A FI956099A (fi) | 1994-12-20 | 1995-12-19 | Menetelmä puolijohdelaitteen valmistamiseksi |
Country Status (5)
Country | Link |
---|---|
US (1) | US5587328A (fi) |
EP (1) | EP0718877A3 (fi) |
JP (1) | JPH08172102A (fi) |
KR (1) | KR0163833B1 (fi) |
FI (1) | FI956099A (fi) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5940697A (en) * | 1997-09-30 | 1999-08-17 | Samsung Electronics Co., Ltd. | T-gate MESFET process using dielectric film lift-off technique |
US7435108B1 (en) | 1999-07-30 | 2008-10-14 | Formfactor, Inc. | Variable width resilient conductive contact structures |
US6713374B2 (en) * | 1999-07-30 | 2004-03-30 | Formfactor, Inc. | Interconnect assemblies and methods |
US6524937B1 (en) * | 2000-08-23 | 2003-02-25 | Tyco Electronics Corp. | Selective T-gate process |
ATE304220T1 (de) | 2002-02-05 | 2005-09-15 | Bernd E Dr Maile | Verfahren zur herstellung einer t-förmigen elektrode |
DE10340926A1 (de) * | 2003-09-03 | 2005-03-31 | Technische Universität Ilmenau Abteilung Forschungsförderung und Technologietransfer | Verfahren zur Herstellung von elektronischen Bauelementen |
CN100421217C (zh) * | 2004-01-29 | 2008-09-24 | 罗姆及海斯电子材料有限公司 | T栅的形成方法 |
US20060009038A1 (en) | 2004-07-12 | 2006-01-12 | International Business Machines Corporation | Processing for overcoming extreme topography |
KR20110133828A (ko) * | 2010-06-07 | 2011-12-14 | 삼성전자주식회사 | 포토레지스트 패턴 형성 방법 |
JP2013258368A (ja) * | 2012-06-14 | 2013-12-26 | Toshiba Corp | 半導体装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4358891A (en) * | 1979-06-22 | 1982-11-16 | Burroughs Corporation | Method of forming a metal semiconductor field effect transistor |
US4567132A (en) * | 1984-03-16 | 1986-01-28 | International Business Machines Corporation | Multi-level resist image reversal lithography process |
KR920009718B1 (ko) * | 1987-08-10 | 1992-10-22 | 스미도모덴기고오교오 가부시기가이샤 | 화합물반도체장치 및 그 제조방법 |
FR2646291B1 (fr) * | 1989-04-21 | 1991-06-14 | Thomson Hybrides Microondes | Procede de realisation d'un transistor autoaligne |
FR2663155B1 (fr) * | 1990-06-12 | 1997-01-24 | Thomson Composants Microondes | Procede de realisation d'une grille de transistor. |
JP2895634B2 (ja) * | 1990-12-18 | 1999-05-24 | 沖電気工業株式会社 | 電界効果トランジスタの製造方法 |
US5288660A (en) * | 1993-02-01 | 1994-02-22 | Avantek, Inc. | Method for forming self-aligned t-shaped transistor electrode |
US5486483A (en) * | 1994-09-27 | 1996-01-23 | Trw Inc. | Method of forming closely spaced metal electrodes in a semiconductor device |
-
1994
- 1994-12-20 JP JP6317019A patent/JPH08172102A/ja active Pending
-
1995
- 1995-12-18 US US08/572,876 patent/US5587328A/en not_active Expired - Lifetime
- 1995-12-19 FI FI956099A patent/FI956099A/fi unknown
- 1995-12-20 KR KR1019950052891A patent/KR0163833B1/ko not_active IP Right Cessation
- 1995-12-20 EP EP95120152A patent/EP0718877A3/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
KR0163833B1 (ko) | 1999-02-01 |
EP0718877A2 (en) | 1996-06-26 |
FI956099A0 (fi) | 1995-12-19 |
EP0718877A3 (en) | 1997-01-15 |
US5587328A (en) | 1996-12-24 |
JPH08172102A (ja) | 1996-07-02 |
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