KR960015805A - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR960015805A
KR960015805A KR1019950035417A KR19950035417A KR960015805A KR 960015805 A KR960015805 A KR 960015805A KR 1019950035417 A KR1019950035417 A KR 1019950035417A KR 19950035417 A KR19950035417 A KR 19950035417A KR 960015805 A KR960015805 A KR 960015805A
Authority
KR
South Korea
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
KR1019950035417A
Other languages
English (en)
Other versions
KR100233190B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960015805A publication Critical patent/KR960015805A/ko
Application granted granted Critical
Publication of KR100233190B1 publication Critical patent/KR100233190B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
KR1019950035417A 1994-10-14 1995-10-13 반도체 장치의 제조방법 KR100233190B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-276058 1994-10-14
JP6276058A JP2705592B2 (ja) 1994-10-14 1994-10-14 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR960015805A true KR960015805A (ko) 1996-05-22
KR100233190B1 KR100233190B1 (ko) 1999-12-01

Family

ID=17564214

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950035417A KR100233190B1 (ko) 1994-10-14 1995-10-13 반도체 장치의 제조방법

Country Status (4)

Country Link
US (1) US6008142A (ko)
JP (1) JP2705592B2 (ko)
KR (1) KR100233190B1 (ko)
CN (1) CN1045347C (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100231588B1 (ko) * 1995-05-12 1999-11-15 미야하라 아끼라 정보검색장치 및 방법

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100246967B1 (ko) * 1997-04-16 2000-03-15 윤종용 반도체 커패시터 제조장치, 커패시터 형성방법 및 그에 의하여 형성된 커패시터와 그 커패시터를 포함하는 반도체 메모리장치
JP3054123B2 (ja) 1998-06-08 2000-06-19 アプライド マテリアルズ インコーポレイテッド イオン注入方法
JP4884180B2 (ja) * 2006-11-21 2012-02-29 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP4974805B2 (ja) * 2007-08-10 2012-07-11 トヨタ自動車株式会社 加熱炉および加熱炉の加熱方法
CN101391258B (zh) * 2007-09-17 2010-06-09 中芯国际集成电路制造(上海)有限公司 反应***预清洗方法
CN102044425B (zh) * 2009-10-23 2012-09-26 中芯国际集成电路制造(上海)有限公司 多晶硅栅的沉积方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935433A (ja) * 1982-08-24 1984-02-27 Nec Corp 半導体装置の熱処理方法
US5023206A (en) * 1987-12-16 1991-06-11 Texas Instruments Incorporated Semiconductor device with adjacent non-oxide layers and the fabrication thereof
JPH0220328A (ja) * 1988-07-08 1990-01-23 Nikon Corp 紫外域用光学要素
JPH0462840A (ja) * 1990-06-25 1992-02-27 Kawasaki Steel Corp 半導体基板の熱処理方法
US5194397A (en) * 1991-06-05 1993-03-16 International Business Machines Corporation Method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface
US5352636A (en) * 1992-01-16 1994-10-04 Applied Materials, Inc. In situ method for cleaning silicon surface and forming layer thereon in same chamber
US5648282A (en) * 1992-06-26 1997-07-15 Matsushita Electronics Corporation Autodoping prevention and oxide layer formation apparatus
US5334556A (en) * 1993-03-23 1994-08-02 Texas Instruments Incorporated Method for improving gate oxide integrity using low temperature oxidation during source/drain anneal
JPH08172084A (ja) * 1994-12-19 1996-07-02 Kokusai Electric Co Ltd 半導体成膜方法及びその装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100231588B1 (ko) * 1995-05-12 1999-11-15 미야하라 아끼라 정보검색장치 및 방법

Also Published As

Publication number Publication date
KR100233190B1 (ko) 1999-12-01
JP2705592B2 (ja) 1998-01-28
US6008142A (en) 1999-12-28
JPH08115907A (ja) 1996-05-07
CN1130305A (zh) 1996-09-04
CN1045347C (zh) 1999-09-29

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E701 Decision to grant or registration of patent right
GRNT Written decision to grant
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