FR2788881B1 - Procede d'implantation de dispositif a semiconducteurs - Google Patents

Procede d'implantation de dispositif a semiconducteurs

Info

Publication number
FR2788881B1
FR2788881B1 FR9915347A FR9915347A FR2788881B1 FR 2788881 B1 FR2788881 B1 FR 2788881B1 FR 9915347 A FR9915347 A FR 9915347A FR 9915347 A FR9915347 A FR 9915347A FR 2788881 B1 FR2788881 B1 FR 2788881B1
Authority
FR
France
Prior art keywords
semiconductor device
implanting semiconductor
implanting
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9915347A
Other languages
English (en)
Other versions
FR2788881A1 (fr
Inventor
Tae Gyoung Kang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2788881A1 publication Critical patent/FR2788881A1/fr
Application granted granted Critical
Publication of FR2788881B1 publication Critical patent/FR2788881B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR9915347A 1998-12-31 1999-12-06 Procede d'implantation de dispositif a semiconducteurs Expired - Lifetime FR2788881B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980063134A KR100291384B1 (ko) 1998-12-31 1998-12-31 반도체장치의레이아웃방법

Publications (2)

Publication Number Publication Date
FR2788881A1 FR2788881A1 (fr) 2000-07-28
FR2788881B1 true FR2788881B1 (fr) 2005-03-18

Family

ID=19569741

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9915347A Expired - Lifetime FR2788881B1 (fr) 1998-12-31 1999-12-06 Procede d'implantation de dispositif a semiconducteurs

Country Status (7)

Country Link
US (1) US6872990B1 (fr)
JP (2) JP5138126B2 (fr)
KR (1) KR100291384B1 (fr)
DE (1) DE19959565B4 (fr)
FR (1) FR2788881B1 (fr)
GB (1) GB2345382B (fr)
TW (1) TW449773B (fr)

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US8839175B2 (en) 2006-03-09 2014-09-16 Tela Innovations, Inc. Scalable meta-data objects
US7917879B2 (en) 2007-08-02 2011-03-29 Tela Innovations, Inc. Semiconductor device with dynamic array section
US9563733B2 (en) 2009-05-06 2017-02-07 Tela Innovations, Inc. Cell circuit and layout with linear finfet structures
US7763534B2 (en) 2007-10-26 2010-07-27 Tela Innovations, Inc. Methods, structures and designs for self-aligning local interconnects used in integrated circuits
US7446352B2 (en) 2006-03-09 2008-11-04 Tela Innovations, Inc. Dynamic array architecture
US8541879B2 (en) 2007-12-13 2013-09-24 Tela Innovations, Inc. Super-self-aligned contacts and method for making the same
US9009641B2 (en) 2006-03-09 2015-04-14 Tela Innovations, Inc. Circuits with linear finfet structures
US8448102B2 (en) 2006-03-09 2013-05-21 Tela Innovations, Inc. Optimizing layout of irregular structures in regular layout context
US8653857B2 (en) 2006-03-09 2014-02-18 Tela Innovations, Inc. Circuitry and layouts for XOR and XNOR logic
US8658542B2 (en) 2006-03-09 2014-02-25 Tela Innovations, Inc. Coarse grid design methods and structures
US9035359B2 (en) 2006-03-09 2015-05-19 Tela Innovations, Inc. Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods
US9230910B2 (en) 2006-03-09 2016-01-05 Tela Innovations, Inc. Oversized contacts and vias in layout defined by linearly constrained topology
US7956421B2 (en) 2008-03-13 2011-06-07 Tela Innovations, Inc. Cross-coupled transistor layouts in restricted gate level layout architecture
JP5087897B2 (ja) * 2006-09-29 2012-12-05 富士通セミコンダクター株式会社 半導体装置
KR100790572B1 (ko) * 2006-11-24 2008-01-21 주식회사 하이닉스반도체 더미 패턴을 포함하는 게이트 레이아웃 설계방법 및 이를이용한 게이트 형성방법
US8667443B2 (en) 2007-03-05 2014-03-04 Tela Innovations, Inc. Integrated circuit cell library for multiple patterning
JP4543061B2 (ja) * 2007-05-15 2010-09-15 株式会社東芝 半導体集積回路
KR100861304B1 (ko) * 2007-06-21 2008-10-01 주식회사 하이닉스반도체 반도체 메모리 장치 및 그의 레이아웃 방법
JP2009016686A (ja) * 2007-07-06 2009-01-22 Toshiba Corp 高周波用トランジスタ
JP2009170807A (ja) * 2008-01-18 2009-07-30 Elpida Memory Inc ダミーゲートパターンを備える半導体装置
US8453094B2 (en) 2008-01-31 2013-05-28 Tela Innovations, Inc. Enforcement of semiconductor structure regularity for localized transistors and interconnect
US7939443B2 (en) 2008-03-27 2011-05-10 Tela Innovations, Inc. Methods for multi-wire routing and apparatus implementing same
SG10201608214SA (en) 2008-07-16 2016-11-29 Tela Innovations Inc Methods for cell phasing and placement in dynamic array architecture and implementation of the same
US9122832B2 (en) 2008-08-01 2015-09-01 Tela Innovations, Inc. Methods for controlling microloading variation in semiconductor wafer layout and fabrication
US8661392B2 (en) 2009-10-13 2014-02-25 Tela Innovations, Inc. Methods for cell boundary encroachment and layouts implementing the Same
US9159627B2 (en) 2010-11-12 2015-10-13 Tela Innovations, Inc. Methods for linewidth modification and apparatus implementing the same
US9293533B2 (en) 2014-06-20 2016-03-22 Infineon Technologies Austria Ag Semiconductor switching devices with different local transconductance
US9349795B2 (en) 2014-06-20 2016-05-24 Infineon Technologies Austria Ag Semiconductor switching device with different local threshold voltage
US9231049B1 (en) * 2014-06-20 2016-01-05 Infineon Technologies Austria Ag Semiconductor switching device with different local cell geometry
US9806094B2 (en) 2015-08-21 2017-10-31 Skyworks Solutions, Inc. Non-uniform spacing in transistor stacks
KR102421730B1 (ko) 2016-04-05 2022-07-18 삼성전자주식회사 레이아웃 방법 및 반도체 소자
JP7178597B2 (ja) * 2019-03-28 2022-11-28 パナソニックＩｐマネジメント株式会社 固体撮像素子
KR20210073687A (ko) 2019-12-10 2021-06-21 삼성전자주식회사 반도체 소자

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DE69128819T2 (de) * 1990-08-13 1998-05-14 Nec Corp Halbleiterspeicheranordnung
JP2528737B2 (ja) * 1990-11-01 1996-08-28 三菱電機株式会社 半導体記憶装置およびその製造方法
JPH085565Y2 (ja) * 1990-11-14 1996-02-14 三洋電機株式会社 半導体メモリ
JPH05206245A (ja) * 1992-01-08 1993-08-13 Nec Corp 半導体装置
JPH05291521A (ja) * 1992-04-13 1993-11-05 Hitachi Ltd 半導体装置の製造方法
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JPH0786590A (ja) * 1993-09-14 1995-03-31 Sony Corp 半導体装置とその製造方法
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JP3474692B2 (ja) * 1994-12-19 2003-12-08 松下電器産業株式会社 半導体装置及びその製造方法
JP3209064B2 (ja) * 1995-02-07 2001-09-17 ソニー株式会社 電界効果型半導体装置の製造方法
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JPH09191018A (ja) * 1996-01-09 1997-07-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
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JP3495869B2 (ja) * 1997-01-07 2004-02-09 株式会社東芝 半導体装置の製造方法
JP3604524B2 (ja) * 1997-01-07 2004-12-22 東芝マイクロエレクトロニクス株式会社 不揮発性強誘電体メモリ
JP3638778B2 (ja) * 1997-03-31 2005-04-13 株式会社ルネサステクノロジ 半導体集積回路装置およびその製造方法
JPH10341008A (ja) * 1997-06-06 1998-12-22 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3159127B2 (ja) * 1997-06-09 2001-04-23 日本電気株式会社 半導体装置の設計方法
US6174741B1 (en) * 1997-12-19 2001-01-16 Siemens Aktiengesellschaft Method for quantifying proximity effect by measuring device performance
JPH11212117A (ja) * 1998-01-26 1999-08-06 Advanced Display Inc Ｔｆｔアレイ基板およびこれを備えた液晶表示装置
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Also Published As

Publication number Publication date
GB2345382A (en) 2000-07-05
JP5138126B2 (ja) 2013-02-06
JP5526097B2 (ja) 2014-06-18
GB9929966D0 (en) 2000-02-09
GB2345382B (en) 2003-09-24
DE19959565B4 (de) 2007-07-12
JP2012049549A (ja) 2012-03-08
JP2000200882A (ja) 2000-07-18
US6872990B1 (en) 2005-03-29
FR2788881A1 (fr) 2000-07-28
KR100291384B1 (ko) 2001-07-12
DE19959565A1 (de) 2000-07-06
TW449773B (en) 2001-08-11
KR20000046449A (ko) 2000-07-25

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