FR2755318B1 - Circuit regulateur et dispositif a circuit integre a semi-conducteur le comprenant - Google Patents
Circuit regulateur et dispositif a circuit integre a semi-conducteur le comprenantInfo
- Publication number
- FR2755318B1 FR2755318B1 FR9708405A FR9708405A FR2755318B1 FR 2755318 B1 FR2755318 B1 FR 2755318B1 FR 9708405 A FR9708405 A FR 9708405A FR 9708405 A FR9708405 A FR 9708405A FR 2755318 B1 FR2755318 B1 FR 2755318B1
- Authority
- FR
- France
- Prior art keywords
- same
- semiconductor integrated
- integrated circuit
- circuit device
- regulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/1563—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators without using an external clock
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
- G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8285647A JPH10133754A (ja) | 1996-10-28 | 1996-10-28 | レギュレータ回路及び半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2755318A1 FR2755318A1 (fr) | 1998-04-30 |
| FR2755318B1 true FR2755318B1 (fr) | 2004-09-24 |
Family
ID=17694249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9708405A Expired - Fee Related FR2755318B1 (fr) | 1996-10-28 | 1997-07-03 | Circuit regulateur et dispositif a circuit integre a semi-conducteur le comprenant |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5861771A (fr) |
| JP (1) | JPH10133754A (fr) |
| KR (1) | KR100264718B1 (fr) |
| FR (1) | FR2755318B1 (fr) |
Families Citing this family (80)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3322145B2 (ja) * | 1996-12-26 | 2002-09-09 | 株式会社村田製作所 | 電流制御回路 |
| JP3732914B2 (ja) * | 1997-02-28 | 2006-01-11 | 株式会社ルネサステクノロジ | 半導体装置 |
| US6768165B1 (en) * | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| KR100512160B1 (ko) * | 1997-11-27 | 2006-03-14 | 삼성전자주식회사 | 내부전원전압발생회로 |
| JPH11213664A (ja) * | 1998-01-23 | 1999-08-06 | Mitsubishi Electric Corp | 半導体集積回路装置 |
| US6057721A (en) * | 1998-04-23 | 2000-05-02 | Microchip Technology Incorporated | Reference circuit using current feedback for fast biasing upon power-up |
| US6060873A (en) * | 1999-03-12 | 2000-05-09 | Vanguard International Semiconductor Corporation | On-chip-generated supply voltage regulator with power-up mode |
| JP3592130B2 (ja) * | 1999-04-19 | 2004-11-24 | 富士通株式会社 | 電子回路 |
| US6208124B1 (en) | 1999-06-04 | 2001-03-27 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit |
| US6411158B1 (en) * | 1999-09-03 | 2002-06-25 | Conexant Systems, Inc. | Bandgap reference voltage with low noise sensitivity |
| JP3423957B2 (ja) * | 1999-11-25 | 2003-07-07 | Ｎｅｃエレクトロニクス株式会社 | 降圧回路 |
| US6281666B1 (en) * | 2000-03-14 | 2001-08-28 | Advanced Micro Devices, Inc. | Efficiency of a multiphase switching power supply during low power mode |
| US6297685B1 (en) * | 2000-06-14 | 2001-10-02 | International Business Machines Corporation | High-speed fully-compensated low-voltage differential driver/translator circuit arrangement |
| JP3831894B2 (ja) * | 2000-08-01 | 2006-10-11 | 株式会社ルネサステクノロジ | 半導体集積回路 |
| FR2817360B1 (fr) * | 2000-11-30 | 2004-03-12 | St Microelectronics Sa | Circuit integre avec dispositif de regulation de la tension d'alimentation |
| US6414539B1 (en) * | 2001-03-29 | 2002-07-02 | Intel Corporation | AC timings at the input buffer of source synchronous and common clock designs by making the supply for differential amplifier track the reference voltage |
| US6584017B2 (en) | 2001-04-05 | 2003-06-24 | Saifun Semiconductors Ltd. | Method for programming a reference cell |
| US7098107B2 (en) * | 2001-11-19 | 2006-08-29 | Saifun Semiconductor Ltd. | Protective layer in memory device and method therefor |
| US6700818B2 (en) * | 2002-01-31 | 2004-03-02 | Saifun Semiconductors Ltd. | Method for operating a memory device |
| US6917544B2 (en) * | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
| US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
| US7178004B2 (en) * | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
| JP4458457B2 (ja) * | 2003-07-04 | 2010-04-28 | 株式会社リコー | 半導体装置 |
| US7123532B2 (en) * | 2003-09-16 | 2006-10-17 | Saifun Semiconductors Ltd. | Operating array cells with matched reference cells |
| US6922099B2 (en) * | 2003-10-21 | 2005-07-26 | Saifun Semiconductors Ltd. | Class AB voltage regulator |
| JP4467963B2 (ja) * | 2003-12-03 | 2010-05-26 | 株式会社東芝 | レギュレータ装置およびそれに用いる逆流防止ダイオード回路 |
| DE10361724A1 (de) * | 2003-12-30 | 2005-08-04 | Infineon Technologies Ag | Spannungsregelsystem |
| WO2005094178A2 (fr) * | 2004-04-01 | 2005-10-13 | Saifun Semiconductors Ltd. | Procede, circuit et systemes pour effacer une ou plusieurs cellules de memoire non volatile |
| US7095655B2 (en) * | 2004-08-12 | 2006-08-22 | Saifun Semiconductors Ltd. | Dynamic matching of signal path and reference path for sensing |
| US20060068551A1 (en) * | 2004-09-27 | 2006-03-30 | Saifun Semiconductors, Ltd. | Method for embedding NROM |
| US7638850B2 (en) * | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
| US20060146624A1 (en) * | 2004-12-02 | 2006-07-06 | Saifun Semiconductors, Ltd. | Current folding sense amplifier |
| CN1838328A (zh) * | 2005-01-19 | 2006-09-27 | 赛芬半导体有限公司 | 擦除存储器阵列上存储单元的方法 |
| JP4603378B2 (ja) * | 2005-02-08 | 2010-12-22 | 株式会社豊田中央研究所 | 基準電圧回路 |
| EP1852766B1 (fr) * | 2005-02-24 | 2010-11-24 | Fujitsu Ltd. | Circuit générateur de tension de réfèrence |
| JP2006244228A (ja) * | 2005-03-04 | 2006-09-14 | Elpida Memory Inc | 電源回路 |
| US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
| US20070141788A1 (en) * | 2005-05-25 | 2007-06-21 | Ilan Bloom | Method for embedding non-volatile memory with logic circuitry |
| US8400841B2 (en) * | 2005-06-15 | 2013-03-19 | Spansion Israel Ltd. | Device to program adjacent storage cells of different NROM cells |
| US7184313B2 (en) * | 2005-06-17 | 2007-02-27 | Saifun Semiconductors Ltd. | Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells |
| BRPI0613349A2 (pt) * | 2005-06-20 | 2011-01-04 | Halliburton Energy Serv Inc | método de diagrafia de resistividade e aparelho de diagrafia de resistividade |
| KR20080036168A (ko) * | 2005-06-24 | 2008-04-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 무선 통신 시스템 |
| JP4741886B2 (ja) * | 2005-06-24 | 2011-08-10 | Ｈｏｙａ株式会社 | レギュレータ回路 |
| US7804126B2 (en) * | 2005-07-18 | 2010-09-28 | Saifun Semiconductors Ltd. | Dense non-volatile memory array and method of fabrication |
| US20070036007A1 (en) * | 2005-08-09 | 2007-02-15 | Saifun Semiconductors, Ltd. | Sticky bit buffer |
| US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
| US20070096199A1 (en) * | 2005-09-08 | 2007-05-03 | Eli Lusky | Method of manufacturing symmetric arrays |
| US7490428B2 (en) * | 2005-10-19 | 2009-02-17 | Halliburton Energy Services, Inc. | High performance communication system |
| US7696756B2 (en) * | 2005-11-04 | 2010-04-13 | Halliburton Energy Services, Inc. | Oil based mud imaging tool with common mode voltage compensation |
| JP2007133533A (ja) * | 2005-11-09 | 2007-05-31 | Nec Electronics Corp | 基準電圧生成回路 |
| WO2007059429A2 (fr) * | 2005-11-10 | 2007-05-24 | Halliburton Energy Services, Inc. | Amplificateur d’electrode deplacee |
| US7352627B2 (en) * | 2006-01-03 | 2008-04-01 | Saifon Semiconductors Ltd. | Method, system, and circuit for operating a non-volatile memory array |
| US7808818B2 (en) * | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
| US7830200B2 (en) * | 2006-01-17 | 2010-11-09 | Cypress Semiconductor Corporation | High voltage tolerant bias circuit with low voltage transistors |
| US7755419B2 (en) | 2006-01-17 | 2010-07-13 | Cypress Semiconductor Corporation | Low power beta multiplier start-up circuit and method |
| US20070173017A1 (en) * | 2006-01-20 | 2007-07-26 | Saifun Semiconductors, Ltd. | Advanced non-volatile memory array and method of fabrication thereof |
| US8253452B2 (en) * | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
| US7692961B2 (en) * | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
| US7760554B2 (en) * | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
| US7701779B2 (en) * | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
| JP2008015875A (ja) * | 2006-07-07 | 2008-01-24 | Matsushita Electric Ind Co Ltd | 電源回路 |
| US7605579B2 (en) * | 2006-09-18 | 2009-10-20 | Saifun Semiconductors Ltd. | Measuring and controlling current consumption and output current of charge pumps |
| JP2008140531A (ja) * | 2006-11-07 | 2008-06-19 | Nec Electronics Corp | 半導体装置及びメモリ |
| WO2008120350A1 (fr) * | 2007-03-29 | 2008-10-09 | Fujitsu Limited | Circuit de génération de tension de référence |
| US20080239599A1 (en) * | 2007-04-01 | 2008-10-02 | Yehuda Yizraeli | Clamping Voltage Events Such As ESD |
| JP2007318154A (ja) * | 2007-06-18 | 2007-12-06 | Renesas Technology Corp | 半導体装置及び直流電圧回路 |
| KR101121090B1 (ko) * | 2007-09-04 | 2012-03-16 | 가부시키가이샤 어드밴티스트 | 전원 안정화 회로, 전자 디바이스 및 시험 장치 |
| JP2009164415A (ja) * | 2008-01-08 | 2009-07-23 | Mitsumi Electric Co Ltd | 半導体装置 |
| JP2009303317A (ja) * | 2008-06-11 | 2009-12-24 | Ricoh Co Ltd | 基準電圧発生回路及びその基準電圧発生回路を備えたｄｃ−ｄｃコンバータ |
| KR101143446B1 (ko) * | 2010-05-31 | 2012-05-22 | 에스케이하이닉스 주식회사 | 전압 발생 회로 |
| SG191917A1 (en) | 2011-01-18 | 2013-08-30 | Halliburton Energy Serv Inc | An improved focused acoustic transducer |
| JP2012170020A (ja) * | 2011-02-16 | 2012-09-06 | Seiko Instruments Inc | 内部電源電圧生成回路 |
| JP2014026610A (ja) * | 2012-07-30 | 2014-02-06 | Seiko Instruments Inc | レギュレータ |
| JP6135768B2 (ja) * | 2013-09-26 | 2017-05-31 | 富士通株式会社 | 降圧電源回路、電源モジュール、及び降圧電源回路の制御方法 |
| US9671801B2 (en) * | 2013-11-06 | 2017-06-06 | Dialog Semiconductor Gmbh | Apparatus and method for a voltage regulator with improved power supply reduction ratio (PSRR) with reduced parasitic capacitance on bias signal lines |
| JP6903398B2 (ja) * | 2016-01-27 | 2021-07-14 | 三菱電機株式会社 | 駆動装置および液晶表示装置 |
| CN107402592B (zh) * | 2016-12-01 | 2018-11-20 | 上海韦玏微电子有限公司 | 启动电路 |
| CN112969979B (zh) * | 2018-10-31 | 2022-10-14 | 罗姆股份有限公司 | 线性电源电路 |
| CN113253787A (zh) * | 2021-06-17 | 2021-08-13 | 苏州裕太微电子有限公司 | 一种芯片内电阻校正电路 |
| US12045074B1 (en) * | 2022-12-29 | 2024-07-23 | Texas Instruments Incorporated | Bandgap voltage reference circuit topology including a feedback circuit with a scaling amplifier |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4156273A (en) * | 1976-10-07 | 1979-05-22 | Sanyo Electric Co., Ltd. | Protection of a switching regulator |
| DE3121638A1 (de) * | 1981-05-30 | 1982-12-23 | Metrawatt GmbH, 8500 Nürnberg | Gleichspannungswandler mit netztrennung fuer eingangsspannungen mit extrem grossem variationsbereich |
| JPS5956865A (ja) * | 1982-09-22 | 1984-04-02 | Sawafuji Electric Co Ltd | 静電複写装置高圧電源回路 |
| US4683529A (en) * | 1986-11-12 | 1987-07-28 | Zytec Corporation | Switching power supply with automatic power factor correction |
| CA1295670C (fr) * | 1987-12-11 | 1992-02-11 | Tooru Kido | Alimentation c.c. a regulation constante de la haute et basse tension pour un regulateur-onduleur |
| JPH03296118A (ja) * | 1990-04-13 | 1991-12-26 | Oki Micro Design Miyazaki:Kk | 基準電圧発生回路 |
| KR930009148B1 (ko) * | 1990-09-29 | 1993-09-23 | 삼성전자 주식회사 | 전원전압 조정회로 |
| US5373226A (en) * | 1991-11-15 | 1994-12-13 | Nec Corporation | Constant voltage circuit formed of FETs and reference voltage generating circuit to be used therefor |
| US5442314A (en) * | 1991-11-22 | 1995-08-15 | Nec Corporation | CMOS circuit for generating voltage related to transistor gate length |
| US5335162A (en) * | 1993-01-15 | 1994-08-02 | Toko America, Inc. | Primary side controller for regulated power converters |
| JPH07123709A (ja) * | 1993-10-28 | 1995-05-12 | Matsushita Electric Ind Co Ltd | 電源装置 |
| US5497119A (en) * | 1994-06-01 | 1996-03-05 | Intel Corporation | High precision voltage regulation circuit for programming multilevel flash memory |
| US5731735A (en) * | 1995-08-25 | 1998-03-24 | Advantest Corporation | Power supply circuit for driving an integrated circuit, wherein the power supply is adjusted based on temperature so that a delay variation within the IC according to temperature may be cancelled |
-
1996
- 1996-10-28 JP JP8285647A patent/JPH10133754A/ja active Pending
-
1997
- 1997-06-10 US US08/871,954 patent/US5861771A/en not_active Expired - Fee Related
- 1997-07-02 KR KR1019970030587A patent/KR100264718B1/ko not_active IP Right Cessation
- 1997-07-03 FR FR9708405A patent/FR2755318B1/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR19980032204A (ko) | 1998-07-25 |
| US5861771A (en) | 1999-01-19 |
| KR100264718B1 (ko) | 2000-09-01 |
| FR2755318A1 (fr) | 1998-04-30 |
| JPH10133754A (ja) | 1998-05-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20070330 |