DE69631013D1 - Halbleiterspeicher - Google Patents
HalbleiterspeicherInfo
- Publication number
- DE69631013D1 DE69631013D1 DE69631013T DE69631013T DE69631013D1 DE 69631013 D1 DE69631013 D1 DE 69631013D1 DE 69631013 T DE69631013 T DE 69631013T DE 69631013 T DE69631013 T DE 69631013T DE 69631013 D1 DE69631013 D1 DE 69631013D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25773595 | 1995-10-04 | ||
JP25773595 | 1995-10-04 | ||
JP27888196 | 1996-09-30 | ||
JP8278881A JPH09161476A (ja) | 1995-10-04 | 1996-09-30 | 半導体メモリ及びそのテスト回路、並びにデ−タ転送システム |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69631013D1 true DE69631013D1 (de) | 2004-01-22 |
DE69631013T2 DE69631013T2 (de) | 2004-09-09 |
Family
ID=26543373
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69637344T Expired - Lifetime DE69637344T2 (de) | 1995-10-04 | 1996-10-04 | Halbleiterspeicher |
DE69631013T Expired - Lifetime DE69631013T2 (de) | 1995-10-04 | 1996-10-04 | Halbleiterspeicher |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69637344T Expired - Lifetime DE69637344T2 (de) | 1995-10-04 | 1996-10-04 | Halbleiterspeicher |
Country Status (4)
Country | Link |
---|---|
US (5) | US5926431A (de) |
EP (3) | EP1184876A3 (de) |
JP (1) | JPH09161476A (de) |
DE (2) | DE69637344T2 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW318933B (en) * | 1996-03-08 | 1997-11-01 | Hitachi Ltd | Semiconductor IC device having a memory and a logic circuit implemented with a single chip |
TW348266B (en) * | 1996-03-11 | 1998-12-21 | Toshiba Co Ltd | Semiconductor memory device |
JP3970396B2 (ja) * | 1997-10-24 | 2007-09-05 | エルピーダメモリ株式会社 | 半導体記憶装置 |
JPH11195766A (ja) | 1997-10-31 | 1999-07-21 | Mitsubishi Electric Corp | 半導体集積回路装置 |
US6215718B1 (en) * | 1998-06-11 | 2001-04-10 | Texas Instruments Incorporated | Architecture for large capacity high-speed random access memory |
FR2784219B1 (fr) * | 1998-09-16 | 2001-11-02 | St Microelectronics Sa | Architecture de circuit memoire |
JP3557114B2 (ja) * | 1998-12-22 | 2004-08-25 | 株式会社東芝 | 半導体記憶装置 |
DE19961727A1 (de) * | 1999-12-21 | 2001-07-05 | Micronas Gmbh | Schaltungsanordnung mit einer Datenübertragungsvorrichtung |
JP3645791B2 (ja) * | 2000-05-29 | 2005-05-11 | エルピーダメモリ株式会社 | 同期型半導体記憶装置 |
JP2002133895A (ja) | 2000-08-17 | 2002-05-10 | Toshiba Corp | アンチフューズを用いたリダンダンシ回路及び半導体メモリにおける不良アドレス検索方法 |
JP2002109884A (ja) * | 2000-09-27 | 2002-04-12 | Toshiba Corp | メモリ装置 |
KR100358919B1 (ko) * | 2000-11-18 | 2002-10-31 | 주식회사 메모리앤테스팅 | 마스터-슬레이브방식을 이용한 반도체칩 검사장치 |
US6678204B2 (en) * | 2001-12-27 | 2004-01-13 | Elpida Memory Inc. | Semiconductor memory device with high-speed operation and methods of using and designing thereof |
US6621745B1 (en) * | 2002-06-18 | 2003-09-16 | Atmel Corporation | Row decoder circuit for use in programming a memory device |
JP4159415B2 (ja) * | 2002-08-23 | 2008-10-01 | エルピーダメモリ株式会社 | メモリモジュール及びメモリシステム |
US6928024B2 (en) * | 2002-08-12 | 2005-08-09 | Infineon Technologies Ag | RAM memory circuit and method for memory operation at a multiplied data rate |
DE10242817C1 (de) * | 2002-08-12 | 2003-12-04 | Infineon Technologies Ag | RAM-Speicherschaltung und Verfahren für einen Speicherbetrieb mit vervielfachter Datenrate |
KR100487918B1 (ko) * | 2002-08-30 | 2005-05-09 | 주식회사 하이닉스반도체 | 불휘발성 강유전체 메모리 장치 |
US7006402B2 (en) | 2003-08-29 | 2006-02-28 | Hynix Semiconductor Inc | Multi-port memory device |
US7332815B2 (en) * | 2003-12-12 | 2008-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR100605576B1 (ko) * | 2003-12-29 | 2006-07-28 | 주식회사 하이닉스반도체 | 일정한 데이터 억세스 타이밍을 유지할 수 있는 반도체메모리 장치 |
KR100564607B1 (ko) * | 2004-01-29 | 2006-03-28 | 삼성전자주식회사 | 태퍼드 lio 센스 앰프를 사용하는 반도체 메모리 장치 |
US7236385B2 (en) * | 2004-06-30 | 2007-06-26 | Micron Technology, Inc. | Memory architecture |
US7366597B2 (en) * | 2005-07-22 | 2008-04-29 | Gm Global Technology Operations, Inc. | Validating control system software variables |
US8145851B2 (en) * | 2005-09-07 | 2012-03-27 | Sony Corporation | Integrated device |
KR100813526B1 (ko) * | 2006-02-07 | 2008-03-17 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 |
US7508724B2 (en) * | 2006-11-30 | 2009-03-24 | Mosaid Technologies Incorporated | Circuit and method for testing multi-device systems |
JP5198785B2 (ja) * | 2007-03-30 | 2013-05-15 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR101468026B1 (ko) * | 2007-05-14 | 2014-12-02 | 삼성전자주식회사 | 메모리 셀 프로그래밍 방법 및 반도체 장치 |
KR100929826B1 (ko) * | 2008-06-04 | 2009-12-07 | 주식회사 하이닉스반도체 | 반도체 메모리 소자 |
JP2010102788A (ja) * | 2008-10-24 | 2010-05-06 | Elpida Memory Inc | 半導体記憶装置 |
KR20100091640A (ko) * | 2009-02-11 | 2010-08-19 | 삼성전자주식회사 | 메모리 장치, 이를 포함하는 메모리 시스템, 및 이들의 데이터 처리 방법 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0101884A3 (de) * | 1982-07-21 | 1987-09-02 | Hitachi, Ltd. | Monolithischer Halbleiterspeicher |
JPS59129983A (ja) | 1983-01-17 | 1984-07-26 | Hitachi Ltd | 半導体メモリ装置 |
JPS63292487A (ja) * | 1987-05-26 | 1988-11-29 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
GB2256279B (en) * | 1988-08-30 | 1993-05-12 | Mitsubishi Electric Corp | Semiconductor memory device |
US5265055A (en) * | 1988-10-07 | 1993-11-23 | Hitachi, Ltd. | Semiconductor memory having redundancy circuit |
JP3060458B2 (ja) | 1989-03-17 | 2000-07-10 | 富士通株式会社 | 半導体記憶装置 |
JPH0814985B2 (ja) * | 1989-06-06 | 1996-02-14 | 富士通株式会社 | 半導体記憶装置 |
JP2542706B2 (ja) * | 1989-10-05 | 1996-10-09 | 株式会社東芝 | ダイナミックram |
JP2825291B2 (ja) * | 1989-11-13 | 1998-11-18 | 株式会社東芝 | 半導体記憶装置 |
JP2740063B2 (ja) | 1990-10-15 | 1998-04-15 | 株式会社東芝 | 半導体記憶装置 |
JP2519593B2 (ja) | 1990-10-24 | 1996-07-31 | 三菱電機株式会社 | 半導体記憶装置 |
JPH04362592A (ja) * | 1991-06-08 | 1992-12-15 | Hitachi Ltd | 半導体記憶装置 |
JP2775552B2 (ja) | 1991-12-26 | 1998-07-16 | 三菱電機株式会社 | 半導体記憶装置 |
US5384745A (en) * | 1992-04-27 | 1995-01-24 | Mitsubishi Denki Kabushiki Kaisha | Synchronous semiconductor memory device |
JP2938706B2 (ja) | 1992-04-27 | 1999-08-25 | 三菱電機株式会社 | 同期型半導体記憶装置 |
DE69329788T2 (de) * | 1992-10-14 | 2001-08-02 | Sun Microsystems Inc | Direktzugriffspeicherentwurf |
JP2768175B2 (ja) * | 1992-10-26 | 1998-06-25 | 日本電気株式会社 | 半導体メモリ |
JP3346827B2 (ja) | 1993-05-25 | 2002-11-18 | 三菱電機株式会社 | 同期型半導体記憶装置 |
JP3099931B2 (ja) | 1993-09-29 | 2000-10-16 | 株式会社東芝 | 半導体装置 |
JP2725570B2 (ja) * | 1993-11-02 | 1998-03-11 | 日本電気株式会社 | 半導体メモリ装置 |
JP3279787B2 (ja) | 1993-12-07 | 2002-04-30 | 株式会社日立製作所 | 半導体記憶装置 |
US5471482A (en) * | 1994-04-05 | 1995-11-28 | Unisys Corporation | VLSI embedded RAM test |
JP3135795B2 (ja) * | 1994-09-22 | 2001-02-19 | 東芝マイクロエレクトロニクス株式会社 | ダイナミック型メモリ |
JP2705590B2 (ja) * | 1994-10-28 | 1998-01-28 | 日本電気株式会社 | 半導体記憶装置 |
US5598374A (en) * | 1995-07-14 | 1997-01-28 | Cirrus Logic, Inc. | Pipeland address memories, and systems and methods using the same |
JPH11195766A (ja) * | 1997-10-31 | 1999-07-21 | Mitsubishi Electric Corp | 半導体集積回路装置 |
US6072743A (en) * | 1998-01-13 | 2000-06-06 | Mitsubishi Denki Kabushiki Kaisha | High speed operable semiconductor memory device with memory blocks arranged about the center |
-
1996
- 1996-09-30 JP JP8278881A patent/JPH09161476A/ja active Pending
- 1996-10-03 US US08/725,542 patent/US5926431A/en not_active Expired - Lifetime
- 1996-10-04 EP EP01123275A patent/EP1184876A3/de not_active Withdrawn
- 1996-10-04 DE DE69637344T patent/DE69637344T2/de not_active Expired - Lifetime
- 1996-10-04 EP EP01123276A patent/EP1184868B1/de not_active Expired - Lifetime
- 1996-10-04 EP EP96115943A patent/EP0771006B1/de not_active Expired - Lifetime
- 1996-10-04 DE DE69631013T patent/DE69631013T2/de not_active Expired - Lifetime
-
1999
- 1999-06-09 US US09/328,562 patent/US6285623B1/en not_active Expired - Fee Related
-
2001
- 2001-06-21 US US09/887,768 patent/US6426912B2/en not_active Expired - Fee Related
-
2002
- 2002-06-06 US US10/165,651 patent/US6515937B2/en not_active Expired - Lifetime
- 2002-12-10 US US10/315,598 patent/US6625082B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH09161476A (ja) | 1997-06-20 |
EP0771006A3 (de) | 1999-08-11 |
US20010033522A1 (en) | 2001-10-25 |
DE69637344D1 (de) | 2008-01-10 |
US20020149991A1 (en) | 2002-10-17 |
US6625082B2 (en) | 2003-09-23 |
US5926431A (en) | 1999-07-20 |
EP0771006B1 (de) | 2003-12-10 |
EP1184868B1 (de) | 2007-11-28 |
EP1184876A3 (de) | 2005-02-09 |
DE69631013T2 (de) | 2004-09-09 |
US6426912B2 (en) | 2002-07-30 |
EP1184876A2 (de) | 2002-03-06 |
US6515937B2 (en) | 2003-02-04 |
US20030095467A1 (en) | 2003-05-22 |
EP1184868A2 (de) | 2002-03-06 |
DE69637344T2 (de) | 2008-10-16 |
US6285623B1 (en) | 2001-09-04 |
EP1184868A3 (de) | 2004-08-18 |
EP0771006A2 (de) | 1997-05-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |