DE69329788T2 - Direktzugriffspeicherentwurf - Google Patents

Direktzugriffspeicherentwurf

Info

Publication number
DE69329788T2
DE69329788T2 DE69329788T DE69329788T DE69329788T2 DE 69329788 T2 DE69329788 T2 DE 69329788T2 DE 69329788 T DE69329788 T DE 69329788T DE 69329788 T DE69329788 T DE 69329788T DE 69329788 T2 DE69329788 T2 DE 69329788T2
Authority
DE
Germany
Prior art keywords
random access
access memory
memory design
design
random
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69329788T
Other languages
English (en)
Other versions
DE69329788D1 (de
Inventor
Mark R Santoro
Gary W Bewick
Lee S Tavrow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sun Microsystems Inc
Original Assignee
Sun Microsystems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sun Microsystems Inc filed Critical Sun Microsystems Inc
Publication of DE69329788D1 publication Critical patent/DE69329788D1/de
Application granted granted Critical
Publication of DE69329788T2 publication Critical patent/DE69329788T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
DE69329788T 1992-10-14 1993-07-30 Direktzugriffspeicherentwurf Expired - Fee Related DE69329788T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US96061692A 1992-10-14 1992-10-14

Publications (2)

Publication Number Publication Date
DE69329788D1 DE69329788D1 (de) 2001-02-01
DE69329788T2 true DE69329788T2 (de) 2001-08-02

Family

ID=25503399

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69329788T Expired - Fee Related DE69329788T2 (de) 1992-10-14 1993-07-30 Direktzugriffspeicherentwurf

Country Status (5)

Country Link
US (1) US5570319A (de)
EP (1) EP0593152B1 (de)
JP (1) JP3575490B2 (de)
KR (1) KR100346356B1 (de)
DE (1) DE69329788T2 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0669620B1 (de) * 1994-02-25 2001-10-24 Kabushiki Kaisha Toshiba Multiplexer
US5537346A (en) * 1994-05-20 1996-07-16 Samsung Electronics Co., Ltd. Semiconductor memory device obtaining high bandwidth and signal line layout method thereof
US5701269A (en) * 1994-11-28 1997-12-23 Fujitsu Limited Semiconductor memory with hierarchical bit lines
WO1996031882A1 (en) * 1995-04-05 1996-10-10 Micron Technology, Inc. Memory circuit with hierarchical bit line structure
US5600602A (en) * 1995-04-05 1997-02-04 Micron Technology, Inc. Hierarchical memory array structure having electrically isolated bit lines for temporary data storage
US5734620A (en) * 1995-04-05 1998-03-31 Micron Technology, Inc. Hierarchical memory array structure with redundant components having electrically isolated bit lines
EP0741387B1 (de) * 1995-05-05 2000-01-12 STMicroelectronics S.r.l. Nichtflüchtige Speicheranordnung mit Sektoren, deren Grösse und Anzahl bestimmbar sind
EP0741415A1 (de) * 1995-05-05 1996-11-06 STMicroelectronics S.r.l. Flash-EEPROM-Speicher mit kontaktlosen Speicherzellen
JPH09161476A (ja) * 1995-10-04 1997-06-20 Toshiba Corp 半導体メモリ及びそのテスト回路、並びにデ−タ転送システム
US5802004A (en) * 1996-01-19 1998-09-01 Sgs-Thomson Microelectronics, Inc. Clocked sense amplifier with wordline tracking
TW318933B (en) * 1996-03-08 1997-11-01 Hitachi Ltd Semiconductor IC device having a memory and a logic circuit implemented with a single chip
JP3579205B2 (ja) * 1996-08-06 2004-10-20 株式会社ルネサステクノロジ 半導体記憶装置、半導体装置、データ処理装置及びコンピュータシステム
EP0834881A1 (de) * 1996-10-01 1998-04-08 STMicroelectronics S.r.l. Mehrfachblock-Speicher
US5991217A (en) * 1996-12-26 1999-11-23 Micro Magic, Inc. Fast SRAM design using embedded sense amps
JP3248468B2 (ja) * 1997-10-30 2002-01-21 日本電気株式会社 半導体記憶装置
US6351427B1 (en) * 1997-12-10 2002-02-26 Texas Instruments Incorporated Stored write scheme for high speed/wide bandwidth memory devices
US6058065A (en) * 1998-05-21 2000-05-02 International Business Machines Corporation Memory in a data processing system having improved performance and method therefor
US5963486A (en) * 1998-06-19 1999-10-05 International Business Machines Corporation Bit switch circuit and bit line selection method
US6031784A (en) * 1998-09-04 2000-02-29 G-Link Technology Hierarchical decoding of a memory device
US6014338A (en) * 1998-12-23 2000-01-11 Sun Microsystems, Inc. Single ended read scheme with global bitline of multi-port register file
US6865099B2 (en) * 1999-01-14 2005-03-08 Silicon Storage Technology, Inc. Wide dynamic range and high speed voltage mode sensing for a multilevel digital non-volatile memory
US6282145B1 (en) * 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
US6178134B1 (en) * 1999-09-21 2001-01-23 Lucent Technologies, Inc. Static random access memory with global bit-lines
US6249470B1 (en) 1999-12-03 2001-06-19 International Business Machines Corporation Bi-directional differential low power sense amp and memory system
US6226216B1 (en) * 2000-01-21 2001-05-01 Intel Corporation Sectional column activated memory
JP3860403B2 (ja) * 2000-09-25 2006-12-20 株式会社東芝 半導体メモリ装置
US6714467B2 (en) * 2002-03-19 2004-03-30 Broadcom Corporation Block redundancy implementation in heirarchical RAM's
US6646954B2 (en) * 2001-02-02 2003-11-11 Broadcom Corporation Synchronous controlled, self-timed local SRAM block
US6876567B2 (en) * 2001-12-21 2005-04-05 Intel Corporation Ferroelectric memory device and method of reading a ferroelectric memory
US8233322B2 (en) * 2003-10-10 2012-07-31 Micron Technology, Inc. Multi-partition memory with separated read and algorithm datalines
FR2881564B1 (fr) 2005-02-02 2007-06-01 St Microelectronics Sa Circuit integre de memoire, en particulier de memoire sram et procede de fabrication correspondant
US7085173B1 (en) * 2005-02-09 2006-08-01 International Business Machines Corporation Write driver circuit for memory array
US7310257B2 (en) * 2005-11-10 2007-12-18 Micron Technology, Inc. Local digit line architecture and method for memory devices having multi-bit or low capacitance memory cells
US7376027B1 (en) * 2006-11-07 2008-05-20 Taiwan Semiconductor Manufacturing Co., Ltd. DRAM concurrent writing and sensing scheme
US7643367B2 (en) * 2007-08-15 2010-01-05 Oki Semiconductor Co., Ltd. Semiconductor memory device
US7848131B2 (en) * 2008-10-19 2010-12-07 Juhan Kim High speed ferroelectric random access memory
US20150138863A1 (en) * 2013-11-15 2015-05-21 Lsi Corporation Interleaved write assist for hierarchical bitline sram architectures

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132930A (en) * 1986-07-31 1992-07-21 Mitsubishi Denki Kabushiki Kaisha CMOS dynamic memory device having multiple flip-flop circuits selectively coupled to form sense amplifiers specific to neighboring data bit lines
EP0258715B1 (de) * 1986-08-15 1994-06-08 Nec Corporation Statischer Direktzugriffspeicher einer Bi-CMOS-Konstruktion
JPH01267891A (ja) * 1988-04-18 1989-10-25 Seiko Epson Corp 半導体記憶装置
DE59010018D1 (de) * 1989-04-21 1996-02-15 Siemens Ag Statischer Speicher
JP2626160B2 (ja) * 1990-04-27 1997-07-02 日本電気株式会社 半導体メモリ
JP2744144B2 (ja) * 1991-03-14 1998-04-28 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
EP0593152B1 (de) 2000-12-27
DE69329788D1 (de) 2001-02-01
KR940010353A (ko) 1994-05-26
KR100346356B1 (ko) 2002-11-18
JP3575490B2 (ja) 2004-10-13
JPH06209083A (ja) 1994-07-26
EP0593152A3 (en) 1995-10-04
EP0593152A2 (de) 1994-04-20
US5570319A (en) 1996-10-29

Similar Documents

Publication Publication Date Title
DE69329788D1 (de) Direktzugriffspeicherentwurf
DE69612676T2 (de) Ferroelektrischer Direktzugriffspeicher
DE69429289D1 (de) Synchroner dynamischer Direktzugriffspeicher
DE69216469T2 (de) Serieller Zugriffspeicher
DE69427334T2 (de) Direktspeicherzugriffssteuerung
DE69329080T2 (de) Cache-Speicher
DE69016094T2 (de) Video-Direktzugriffsspeicher.
DE69229763D1 (de) Speicherzugriffsvorrichtung
DE69334149D1 (de) Speicherkarte
EP0594347A3 (en) Synchronous static random access memory
DE69016697D1 (de) Video-Direktzugriffsspeicher.
DE69223167T2 (de) Statische Direktzugriffsspeicheranordnung
DE69125542T2 (de) Dynamischer Direktzugriffspeicher
DE68919718T2 (de) Pseudo-statischer Direktzugriffspeicher.
DE69427512T2 (de) Direktspeicherzugriffssteuerung
DE69625038T2 (de) Dynamischer Direktzugriffsspeicher
DE69429374D1 (de) Doppelzugriffspeicher
DE69227433D1 (de) Speicherzugriffseinrichtung
GB2277390B (en) Random access memory
DE69331457D1 (de) Serieller Zugriffspeicher
DE69231028T2 (de) Serieller zugriffspeicher
DE69620528T2 (de) Dynamischer Direktzugriffspeicher
DE69409146D1 (de) Dynamischer Direktzugriffhalbleiterspeicher
AU9083691A (en) Random access memory
KR930015981U (ko) 확장 메모리 액세스 장치

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee