DE60341314C5 - Hocheffiziente leuchtdioden auf galliumnitridbasis mit oberflächenaufrauhung - Google Patents
Hocheffiziente leuchtdioden auf galliumnitridbasis mit oberflächenaufrauhung Download PDFInfo
- Publication number
- DE60341314C5 DE60341314C5 DE60341314.5A DE60341314A DE60341314C5 DE 60341314 C5 DE60341314 C5 DE 60341314C5 DE 60341314 A DE60341314 A DE 60341314A DE 60341314 C5 DE60341314 C5 DE 60341314C5
- Authority
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- Germany
- Prior art keywords
- led
- face surface
- exposed
- face
- active region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910002601 GaN Inorganic materials 0.000 title claims 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract 6
- 238000005530 etching Methods 0.000 claims abstract 5
- 229910052733 gallium Inorganic materials 0.000 claims abstract 5
- 238000000605 extraction Methods 0.000 claims abstract 4
- 229910052738 indium Inorganic materials 0.000 claims abstract 4
- 238000000034 method Methods 0.000 claims abstract 4
- 230000002708 enhancing effect Effects 0.000 claims abstract 3
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract 3
- 239000000758 substrate Substances 0.000 claims 3
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 claims 2
- 239000004593 Epoxy Substances 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910001199 N alloy Inorganic materials 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 230000031700 light absorption Effects 0.000 claims 1
- 238000007788 roughening Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 101100322245 Caenorhabditis elegans des-2 gene Proteins 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A (Al,Ga,In)N light emitting diode, termed „LED“ in the following, wherein light emitted from an active region (44) is extracted from the LED through an exposed nitrogen face surface, termed „N-Face-surface“ in the following of an n-type layer (42) of the LED and the exposed N-face surface is roughened by an anisotropic etching process, resulting in the exposed N-face surface being structured into a plurality of randomly arranged hexagonal cones to reduce light reflections occurring repeatedly inside the LED, thereby enhancing extraction of the light from the active region out of the N-face surface as compared with an LED with a flat surface.
Description
- Der X. Zivilsenat des Bundesgerichtshofs hat auf die mündliche Verhandlung vom 21. Juli 2022
für Recht erkannt: - Auf die Berufung der Beklagten wird das Urteil des 2. Senats (Nichtigkeitssenats) des Bundespatentgerichts vom 2. Juli 2020 unter Zurückweisung des weitergehenden Rechtsmittels abgeändert.
- Das europäische Patent 1 697 983 wird mit Wirkung für die Bundesrepublik Deutschland dadurch teilweise für nichtig erklärt, dass die Patentansprüche die nachfolgende Fassung erhalten:
Claims (10)
- A (Al,Ga,In)N light emitting diode, termed „LED“ in the following, wherein light emitted from an active region (44) is extracted from the LED through an exposed nitrogen face surface, termed „N-Face-surface“ in the following of an n-type layer (42) of the LED and the exposed N-face surface is roughened by an anisotropic etching process, resulting in the exposed N-face surface being structured into a plurality of randomly arranged hexagonal cones to reduce light reflections occurring repeatedly inside the LED, thereby enhancing extraction of the light from the active region out of the N-face surface as compared with an LED with a flat surface.
- The LED of claim 1, wherein the LED is grown on a c-plane gallium nitride wafer and a gallium face „Ga-face“ is a p-type layer.
- The LED of claim 1 or 2, wherein the LED is comprised of an n-type electrode, n-type layer, active region, p-type layer and p-type electrode.
- The LED of claim 3, wherein the n-type layer, active region and p-type layer are each comprised of a (Al,Ga,In)N alloy.
- The LED of claim 3 or 4, wherein the LED includes a current-blocking layer aligned under the n-type electrode to keep the current from concentrating below the n-type electrode, so that absorption of light emission under the n-type electrode can be avoided and extraction efficiency can be increased.
- The LED of claim 3, 4 or 5, wherein the LED includes a current-confining frame made of an insulator to restrain leakage current through the sidewalls of the LED without significantly decreasing an emitting area.
- A method of creating a (Al,Ga,In)N based light emitting diode, termed „LED“ in the following, comprising: growing (56) epitaxial LED layers including a light emitting active region on a substrate; exposing (64-72) a nitrogen face surface, termed „N-Face surface“ in the following of an n-type layer of the LED by removing the substrate from the layers; and roughening the exposed N-face surface by anisotropic etching, thereby structuring (76) the exposed N-face surface into a plurality of randomly arranged hexagonal cones after the substrate is removed to reduce light reflections occurring repeatedly inside the LED, thereby enhancing extraction of the light from the active region out of the exposed N-face surface, as compared with an LED with a flat surface.
- The method of claim 9, wherein the anisotropic etching is a photo-enhanced chemical „PEC“ etching.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2003/039211 WO2005064666A1 (en) | 2003-12-09 | 2003-12-09 | Highly efficient gallium nitride based light emitting diodes via surface roughening |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60341314C5 true DE60341314C5 (de) | 2023-03-23 |
Family
ID=34738256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60341314.5A Expired - Lifetime DE60341314C5 (de) | 2003-12-09 | 2003-12-09 | Hocheffiziente leuchtdioden auf galliumnitridbasis mit oberflächenaufrauhung |
Country Status (9)
Country | Link |
---|---|
US (6) | US7704763B2 (de) |
EP (2) | EP1697983B1 (de) |
JP (1) | JP5719493B2 (de) |
KR (2) | KR101154494B1 (de) |
CN (1) | CN100521120C (de) |
AU (1) | AU2003296426A1 (de) |
DE (1) | DE60341314C5 (de) |
ES (1) | ES2615209T3 (de) |
WO (1) | WO2005064666A1 (de) |
Families Citing this family (239)
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- 2003-12-09 US US10/581,940 patent/US7704763B2/en not_active Expired - Lifetime
- 2003-12-09 AU AU2003296426A patent/AU2003296426A1/en not_active Abandoned
- 2003-12-09 DE DE60341314.5A patent/DE60341314C5/de not_active Expired - Lifetime
- 2003-12-09 EP EP11154566.1A patent/EP2320482B1/de not_active Expired - Lifetime
- 2003-12-09 CN CNB2003801109459A patent/CN100521120C/zh not_active Expired - Lifetime
- 2003-12-09 WO PCT/US2003/039211 patent/WO2005064666A1/en active Application Filing
- 2003-12-09 KR KR1020117004218A patent/KR101154494B1/ko active IP Right Grant
- 2003-12-09 JP JP2005512858A patent/JP5719493B2/ja not_active Expired - Lifetime
- 2003-12-09 ES ES11154566.1T patent/ES2615209T3/es not_active Expired - Lifetime
- 2003-12-09 KR KR1020067013748A patent/KR101156146B1/ko active IP Right Grant
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2009
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2019
- 2019-09-05 US US16/561,366 patent/US10985293B2/en not_active Expired - Lifetime
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2021
- 2021-03-18 US US17/205,249 patent/US11677044B2/en not_active Expired - Lifetime
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- 2023-05-02 US US18/310,963 patent/US20230275185A1/en active Pending
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US20230275185A1 (en) | 2023-08-31 |
WO2005064666A1 (en) | 2005-07-14 |
JP2007521641A (ja) | 2007-08-02 |
EP1697983A1 (de) | 2006-09-06 |
US11677044B2 (en) | 2023-06-13 |
ES2615209T3 (es) | 2017-06-05 |
US20200212258A1 (en) | 2020-07-02 |
US8766296B2 (en) | 2014-07-01 |
CN100521120C (zh) | 2009-07-29 |
US20070121690A1 (en) | 2007-05-31 |
EP2320482A3 (de) | 2011-09-07 |
CN1886827A (zh) | 2006-12-27 |
KR101156146B1 (ko) | 2012-06-18 |
US20100025717A1 (en) | 2010-02-04 |
AU2003296426A1 (en) | 2005-07-21 |
EP1697983A4 (de) | 2008-04-23 |
US10446714B2 (en) | 2019-10-15 |
EP1697983B1 (de) | 2012-06-13 |
KR20110031248A (ko) | 2011-03-24 |
US20140252396A1 (en) | 2014-09-11 |
JP5719493B2 (ja) | 2015-05-20 |
US20210210657A1 (en) | 2021-07-08 |
EP2320482B1 (de) | 2016-11-16 |
EP2320482A2 (de) | 2011-05-11 |
US7704763B2 (en) | 2010-04-27 |
US10985293B2 (en) | 2021-04-20 |
KR20060131799A (ko) | 2006-12-20 |
KR101154494B1 (ko) | 2012-06-13 |
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