DE3235412A1 - Integrierte halbleiterschaltungsvorrichtung und verfahren zu ihrer herstellung - Google Patents
Integrierte halbleiterschaltungsvorrichtung und verfahren zu ihrer herstellungInfo
- Publication number
- DE3235412A1 DE3235412A1 DE19823235412 DE3235412A DE3235412A1 DE 3235412 A1 DE3235412 A1 DE 3235412A1 DE 19823235412 DE19823235412 DE 19823235412 DE 3235412 A DE3235412 A DE 3235412A DE 3235412 A1 DE3235412 A1 DE 3235412A1
- Authority
- DE
- Germany
- Prior art keywords
- injection
- semiconductor
- section
- iil
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 58
- 238000000034 method Methods 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000002347 injection Methods 0.000 claims description 82
- 239000007924 injection Substances 0.000 claims description 82
- 239000000758 substrate Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 25
- 239000012535 impurity Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 101150110971 CIN7 gene Proteins 0.000 description 2
- 101150110298 INV1 gene Proteins 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 101100397044 Xenopus laevis invs-a gene Proteins 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56150607A JPS5852870A (ja) | 1981-09-25 | 1981-09-25 | 半導体集積回路装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3235412A1 true DE3235412A1 (de) | 1983-05-26 |
Family
ID=15500577
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19823235412 Withdrawn DE3235412A1 (de) | 1981-09-25 | 1982-09-24 | Integrierte halbleiterschaltungsvorrichtung und verfahren zu ihrer herstellung |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5852870A (fr) |
DE (1) | DE3235412A1 (fr) |
FR (1) | FR2513810B1 (fr) |
GB (1) | GB2106320B (fr) |
HK (1) | HK45986A (fr) |
IT (1) | IT1153732B (fr) |
MY (1) | MY8600559A (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS616079A (ja) * | 1984-06-19 | 1986-01-11 | Fukuyama Gomme Kogyo Kk | 弾性体クロ−ラ |
JPS6267851A (ja) * | 1985-09-20 | 1987-03-27 | Hitachi Ltd | 半導体集積回路装置 |
JPH0715830Y2 (ja) * | 1989-01-13 | 1995-04-12 | オーツタイヤ株式会社 | クローラ用弾性履帯 |
JPH0562396U (ja) * | 1992-05-18 | 1993-08-20 | 福山ゴム工業株式会社 | ゴムクローラ |
JP2008205418A (ja) * | 2007-02-19 | 2008-09-04 | Mikio Shimoyama | いつでもスイッチ |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2756535A1 (de) * | 1976-12-31 | 1978-07-06 | Philips Nv | Vorrichtung zur kopplung in der i hoch 2 l-technik betriebener transistoren mit einem auf hoeheren ruhestrom eingestellten transistor |
DE2800363A1 (de) * | 1977-01-17 | 1978-07-20 | Philips Nv | Halbleiteranordnung und verfahren zu deren herstellung |
DE2722667A1 (de) * | 1977-05-18 | 1978-11-30 | Siemens Ag | Integrierte halbleiterschaltung mit invertern vom i hoch 2 l-typ |
DE2841755A1 (de) * | 1977-09-28 | 1979-04-05 | Ibm | Integrierte logische schaltung |
DE2837519A1 (de) * | 1978-08-28 | 1980-03-20 | Philips Patentverwaltung | Monolithische integrierte halbleiter- schaltungsanordnung |
DE3013559A1 (de) * | 1979-04-09 | 1980-10-16 | Tokyo Shibaura Electric Co | Halbleitervorrichtung und verfahren zu ihrer herstellung |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2280124A1 (fr) * | 1974-02-19 | 1976-02-20 | Texas Instruments Inc | Montre numerique electronique comprenant un oscillateur a courant regule |
DE2624584A1 (de) * | 1976-06-01 | 1977-12-15 | Siemens Ag | Anordnung zur versorgung von i hoch 2 l-schaltungen mit verschiedenen stroemen |
JPS55127060A (en) * | 1979-03-24 | 1980-10-01 | Mitsubishi Electric Corp | Iil integrated circuit |
JPS5635460A (en) * | 1979-08-29 | 1981-04-08 | Nec Corp | Logic circuit using integrated injection type logic element |
-
1981
- 1981-09-25 JP JP56150607A patent/JPS5852870A/ja active Granted
-
1982
- 1982-08-09 FR FR8213878A patent/FR2513810B1/fr not_active Expired
- 1982-09-20 IT IT23345/82A patent/IT1153732B/it active
- 1982-09-24 DE DE19823235412 patent/DE3235412A1/de not_active Withdrawn
- 1982-09-24 GB GB08227356A patent/GB2106320B/en not_active Expired
-
1986
- 1986-06-19 HK HK459/86A patent/HK45986A/xx unknown
- 1986-12-30 MY MY559/86A patent/MY8600559A/xx unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2756535A1 (de) * | 1976-12-31 | 1978-07-06 | Philips Nv | Vorrichtung zur kopplung in der i hoch 2 l-technik betriebener transistoren mit einem auf hoeheren ruhestrom eingestellten transistor |
DE2800363A1 (de) * | 1977-01-17 | 1978-07-20 | Philips Nv | Halbleiteranordnung und verfahren zu deren herstellung |
DE2722667A1 (de) * | 1977-05-18 | 1978-11-30 | Siemens Ag | Integrierte halbleiterschaltung mit invertern vom i hoch 2 l-typ |
DE2841755A1 (de) * | 1977-09-28 | 1979-04-05 | Ibm | Integrierte logische schaltung |
DE2837519A1 (de) * | 1978-08-28 | 1980-03-20 | Philips Patentverwaltung | Monolithische integrierte halbleiter- schaltungsanordnung |
DE3013559A1 (de) * | 1979-04-09 | 1980-10-16 | Tokyo Shibaura Electric Co | Halbleitervorrichtung und verfahren zu ihrer herstellung |
Non-Patent Citations (1)
Title |
---|
US-Z: IBM Technical Disclosure Bulletin, Bd.23, No.5, Okt. 1980, S.1985,86 * |
Also Published As
Publication number | Publication date |
---|---|
MY8600559A (en) | 1986-12-31 |
JPS5852870A (ja) | 1983-03-29 |
GB2106320A (en) | 1983-04-07 |
HK45986A (en) | 1986-06-27 |
IT1153732B (it) | 1987-01-14 |
FR2513810B1 (fr) | 1986-06-27 |
FR2513810A1 (fr) | 1983-04-01 |
JPH0412032B2 (fr) | 1992-03-03 |
GB2106320B (en) | 1985-07-10 |
IT8223345A0 (it) | 1982-09-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
8141 | Disposal/no request for examination |