DE3235412A1 - Integrierte halbleiterschaltungsvorrichtung und verfahren zu ihrer herstellung - Google Patents

Integrierte halbleiterschaltungsvorrichtung und verfahren zu ihrer herstellung

Info

Publication number: DE3235412A1
Authority: DE; Germany
Prior art keywords: injection; semiconductor; section; iil; region
Prior art date: 1981-09-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

DE19823235412

Other languages

German (de)

English (en)

Inventor

Isao Takasaki Gunma Shimizu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-09-25

Filing date

1982-09-24

Publication date

1983-05-26

1982-09-24 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1983-05-26 Publication of DE3235412A1 publication Critical patent/DE3235412A1/de

Status Withdrawn legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims description 58
238000000034 method Methods 0.000 title claims description 10
238000004519 manufacturing process Methods 0.000 title claims description 8
238000002347 injection Methods 0.000 claims description 82
239000007924 injection Substances 0.000 claims description 82
239000000758 substrate Substances 0.000 claims description 19
229910052751 metal Inorganic materials 0.000 claims description 16
239000002184 metal Substances 0.000 claims description 16
230000015572 biosynthetic process Effects 0.000 claims description 5
239000011248 coating agent Substances 0.000 claims 1
238000000576 coating method Methods 0.000 claims 1
239000010410 layer Substances 0.000 description 25
239000012535 impurity Substances 0.000 description 9
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
229910052710 silicon Inorganic materials 0.000 description 5
239000010703 silicon Substances 0.000 description 5
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
229910052698 phosphorus Inorganic materials 0.000 description 4
239000011574 phosphorus Substances 0.000 description 4
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
229910052782 aluminium Inorganic materials 0.000 description 3
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
229910052796 boron Inorganic materials 0.000 description 3
230000003247 decreasing effect Effects 0.000 description 3
238000010586 diagram Methods 0.000 description 3
230000005669 field effect Effects 0.000 description 3
230000010354 integration Effects 0.000 description 3
239000011229 interlayer Substances 0.000 description 3
101150110971 CIN7 gene Proteins 0.000 description 2
101150110298 INV1 gene Proteins 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
101100397044 Xenopus laevis invs-a gene Proteins 0.000 description 2
238000010276 construction Methods 0.000 description 2
238000009792 diffusion process Methods 0.000 description 2
238000005468 ion implantation Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
238000012986 modification Methods 0.000 description 2
229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
238000003892 spreading Methods 0.000 description 2
229910004298 SiO 2 Inorganic materials 0.000 description 1
230000003321 amplification Effects 0.000 description 1
229910052787 antimony Inorganic materials 0.000 description 1
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
239000002800 charge carrier Substances 0.000 description 1
230000000295 complement effect Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005530 etching Methods 0.000 description 1
238000009413 insulation Methods 0.000 description 1
239000000463 material Substances 0.000 description 1
238000003199 nucleic acid amplification method Methods 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
238000001259 photo etching Methods 0.000 description 1
229920001721 polyimide Polymers 0.000 description 1
239000009719 polyimide resin Substances 0.000 description 1
238000000926 separation method Methods 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Bipolar Integrated Circuits (AREA)
Bipolar Transistors (AREA)

DE19823235412 1981-09-25 1982-09-24 Integrierte halbleiterschaltungsvorrichtung und verfahren zu ihrer herstellung Withdrawn DE3235412A1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP56150607A JPS5852870A (ja)	1981-09-25	1981-09-25	半導体集積回路装置

Publications (1)

Publication Number	Publication Date
DE3235412A1 true DE3235412A1 (de)	1983-05-26

Family

ID=15500577

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE19823235412 Withdrawn DE3235412A1 (de)	1981-09-25	1982-09-24	Integrierte halbleiterschaltungsvorrichtung und verfahren zu ihrer herstellung

Country Status (7)

Country	Link
JP (1)	JPS5852870A (fr)
DE (1)	DE3235412A1 (fr)
FR (1)	FR2513810B1 (fr)
GB (1)	GB2106320B (fr)
HK (1)	HK45986A (fr)
IT (1)	IT1153732B (fr)
MY (1)	MY8600559A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS616079A (ja) *	1984-06-19	1986-01-11	Fukuyama Gomme Kogyo Kk	弾性体クロ−ラ
JPS6267851A (ja) *	1985-09-20	1987-03-27	Hitachi Ltd	半導体集積回路装置
JPH0715830Y2 (ja) *	1989-01-13	1995-04-12	オーツタイヤ株式会社	クローラ用弾性履帯
JPH0562396U (ja) *	1992-05-18	1993-08-20	福山ゴム工業株式会社	ゴムクローラ
JP2008205418A (ja) *	2007-02-19	2008-09-04	Mikio Shimoyama	いつでもスイッチ

Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2756535A1 (de) *	1976-12-31	1978-07-06	Philips Nv	Vorrichtung zur kopplung in der i hoch 2 l-technik betriebener transistoren mit einem auf hoeheren ruhestrom eingestellten transistor
DE2800363A1 (de) *	1977-01-17	1978-07-20	Philips Nv	Halbleiteranordnung und verfahren zu deren herstellung
DE2722667A1 (de) *	1977-05-18	1978-11-30	Siemens Ag	Integrierte halbleiterschaltung mit invertern vom i hoch 2 l-typ
DE2841755A1 (de) *	1977-09-28	1979-04-05	Ibm	Integrierte logische schaltung
DE2837519A1 (de) *	1978-08-28	1980-03-20	Philips Patentverwaltung	Monolithische integrierte halbleiter- schaltungsanordnung
DE3013559A1 (de) *	1979-04-09	1980-10-16	Tokyo Shibaura Electric Co	Halbleitervorrichtung und verfahren zu ihrer herstellung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2280124A1 (fr) *	1974-02-19	1976-02-20	Texas Instruments Inc	Montre numerique electronique comprenant un oscillateur a courant regule
DE2624584A1 (de) *	1976-06-01	1977-12-15	Siemens Ag	Anordnung zur versorgung von i hoch 2 l-schaltungen mit verschiedenen stroemen
JPS55127060A (en) *	1979-03-24	1980-10-01	Mitsubishi Electric Corp	Iil integrated circuit
JPS5635460A (en) *	1979-08-29	1981-04-08	Nec Corp	Logic circuit using integrated injection type logic element

1981
- 1981-09-25 JP JP56150607A patent/JPS5852870A/ja active Granted
1982
- 1982-08-09 FR FR8213878A patent/FR2513810B1/fr not_active Expired
- 1982-09-20 IT IT23345/82A patent/IT1153732B/it active
- 1982-09-24 DE DE19823235412 patent/DE3235412A1/de not_active Withdrawn
- 1982-09-24 GB GB08227356A patent/GB2106320B/en not_active Expired
1986
- 1986-06-19 HK HK459/86A patent/HK45986A/xx unknown
- 1986-12-30 MY MY559/86A patent/MY8600559A/xx unknown

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2756535A1 (de) *	1976-12-31	1978-07-06	Philips Nv	Vorrichtung zur kopplung in der i hoch 2 l-technik betriebener transistoren mit einem auf hoeheren ruhestrom eingestellten transistor
DE2800363A1 (de) *	1977-01-17	1978-07-20	Philips Nv	Halbleiteranordnung und verfahren zu deren herstellung
DE2722667A1 (de) *	1977-05-18	1978-11-30	Siemens Ag	Integrierte halbleiterschaltung mit invertern vom i hoch 2 l-typ
DE2841755A1 (de) *	1977-09-28	1979-04-05	Ibm	Integrierte logische schaltung
DE2837519A1 (de) *	1978-08-28	1980-03-20	Philips Patentverwaltung	Monolithische integrierte halbleiter- schaltungsanordnung
DE3013559A1 (de) *	1979-04-09	1980-10-16	Tokyo Shibaura Electric Co	Halbleitervorrichtung und verfahren zu ihrer herstellung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US-Z: IBM Technical Disclosure Bulletin, Bd.23, No.5, Okt. 1980, S.1985,86 *

Also Published As

Publication number	Publication date
MY8600559A (en)	1986-12-31
JPS5852870A (ja)	1983-03-29
GB2106320A (en)	1983-04-07
HK45986A (en)	1986-06-27
IT1153732B (it)	1987-01-14
FR2513810B1 (fr)	1986-06-27
FR2513810A1 (fr)	1983-04-01
JPH0412032B2 (fr)	1992-03-03
GB2106320B (en)	1985-07-10
IT8223345A0 (it)	1982-09-20

Legal Events

Date	Code	Title	Description
1983-05-26	OM8	Search report available as to paragraph 43 lit. 1 sentence 1 patent law
1989-12-21	8141	Disposal/no request for examination

Publication	Publication Date	Title
DE2334405C3 (de)	1987-01-22	Hochintegrierte Halbleiterschaltung
DE4013643C2 (de)	1997-01-16	Bipolartransistor mit isolierter Steuerelektrode und Verfahren zu seiner Herstellung
DE3781469T2 (de)	1993-01-07	Integrierte halbleiter-schaltung mit einer verbesserten verbindungsstruktur.
DE2312413B2 (de)	1976-03-18	Verfahren zur herstellung eines matrixschaltkreises
DE2925246C2 (fr)	1990-06-21
DE1260029B (de)	1968-02-01	Verfahren zum Herstellen von Halbleiterbauelementen auf einem Halbleitereinkristallgrundplaettchen
DE3223276A1 (de)	1983-01-05	Integrierte halbleiterschaltung und verfahren zu ihrer herstellung
CH623959A5 (fr)	1981-06-30
DE68928193T2 (de)	1997-11-13	Halbleiterchip und Verfahren zu seiner Herstellung
DE2408527A1 (de)	1974-09-05	Anordnung mit leiterbahnen auf verschiedenen pegeln und mit verbindungen zwischen diesen leiterbahnen
DE2932043A1 (de)	1980-03-06	Feldgesteuerter thyristor und verfahren zu seiner herstellung
DE2523221C2 (fr)	1992-09-17
DE1764155B2 (de)	1981-04-09	Verfahren zum Herstellen eines Halbleiterbauelementes aus einem Siliciumkörper
DE2315761B2 (de)	1975-01-30	Verfahren zur Herstellung einer integrierten Schaltung aus Oberflächen-Feldeffekttransistoren
DE2556668C3 (de)	1980-07-03	Halbleiter-Speichervorrichtung
DE2658090C2 (de)	1985-12-12	Monolithisch integrierter bipolarer Transistor mit niedrigem Sättigungswiderstand
DE1564218A1 (de)	1970-01-08	Verfahren zur Herstellung von Transistoren
DE2740757A1 (de)	1978-03-16	Halbleiter mit mehrschichtiger metallisierung und verfahren zu dessen herstellung
DE2854994C2 (de)	1986-01-16	Halbleiteranordnung mit einem Transistor und einem mit dem Basisgebiet des Transistors verbundenen Widerstand
DE1616438C3 (de)	1979-03-15	Integrierte Schaltung, Verwendung dieser Schaltung und Verfahren zu ihrer Herstellung
EP0001209A1 (fr)	1979-04-04	Circuit semi-conducteur intégré
DE3235412A1 (de)	1983-05-26	Integrierte halbleiterschaltungsvorrichtung und verfahren zu ihrer herstellung
DE4003681A1 (de)	1990-08-16	Halbleiteranordnung und verfahren zu ihrer herstellung
DE2540350B2 (de)	1980-07-03	Halbleiterschaltung mit einer Matrix aus Isolierschicht-Feldeffekttransistoren
DE3917303C2 (fr)	1993-09-02