IT1153732B - Dispositivo circuitale integrato a semiconduttore e relativo procedimento di fabbricazione - Google Patents

Dispositivo circuitale integrato a semiconduttore e relativo procedimento di fabbricazione

Info

Publication number
IT1153732B
IT1153732B IT23345/82A IT2334582A IT1153732B IT 1153732 B IT1153732 B IT 1153732B IT 23345/82 A IT23345/82 A IT 23345/82A IT 2334582 A IT2334582 A IT 2334582A IT 1153732 B IT1153732 B IT 1153732B
Authority
IT
Italy
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
manufacturing procedure
related manufacturing
Prior art date
Application number
IT23345/82A
Other languages
English (en)
Other versions
IT8223345A0 (it
Inventor
Shimizu Isao
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8223345A0 publication Critical patent/IT8223345A0/it
Application granted granted Critical
Publication of IT1153732B publication Critical patent/IT1153732B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
IT23345/82A 1981-09-25 1982-09-20 Dispositivo circuitale integrato a semiconduttore e relativo procedimento di fabbricazione IT1153732B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56150607A JPS5852870A (ja) 1981-09-25 1981-09-25 半導体集積回路装置

Publications (2)

Publication Number Publication Date
IT8223345A0 IT8223345A0 (it) 1982-09-20
IT1153732B true IT1153732B (it) 1987-01-14

Family

ID=15500577

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23345/82A IT1153732B (it) 1981-09-25 1982-09-20 Dispositivo circuitale integrato a semiconduttore e relativo procedimento di fabbricazione

Country Status (7)

Country Link
JP (1) JPS5852870A (it)
DE (1) DE3235412A1 (it)
FR (1) FR2513810B1 (it)
GB (1) GB2106320B (it)
HK (1) HK45986A (it)
IT (1) IT1153732B (it)
MY (1) MY8600559A (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS616079A (ja) * 1984-06-19 1986-01-11 Fukuyama Gomme Kogyo Kk 弾性体クロ−ラ
JPS6267851A (ja) * 1985-09-20 1987-03-27 Hitachi Ltd 半導体集積回路装置
JPH0715830Y2 (ja) * 1989-01-13 1995-04-12 オーツタイヤ株式会社 クローラ用弾性履帯
JPH0562396U (ja) * 1992-05-18 1993-08-20 福山ゴム工業株式会社 ゴムクローラ
JP2008205418A (ja) * 2007-02-19 2008-09-04 Mikio Shimoyama いつでもスイッチ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50124674A (it) * 1974-02-19 1975-09-30
DE2624584A1 (de) * 1976-06-01 1977-12-15 Siemens Ag Anordnung zur versorgung von i hoch 2 l-schaltungen mit verschiedenen stroemen
NL7614610A (nl) * 1976-12-31 1978-07-04 Philips Nv Inrichting voor het koppelen van in i2l techniek bedreven transistoren met een op hogere rust- stroom ingestelde transistor.
NL7700420A (nl) * 1977-01-17 1978-07-19 Philips Nv Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan.
DE2722667C2 (de) * 1977-05-18 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Integrierte Halbleiterschaltung mit Invertern vom I↑2↑ L-Typ
FR2404962A1 (fr) * 1977-09-28 1979-04-27 Ibm France Dispositif semi-conducteur du genre cellule bistable en technologie a injection de courant, commandee par l'injecteur
DE2837519A1 (de) * 1978-08-28 1980-03-20 Philips Patentverwaltung Monolithische integrierte halbleiter- schaltungsanordnung
JPS55127060A (en) * 1979-03-24 1980-10-01 Mitsubishi Electric Corp Iil integrated circuit
JPS55134962A (en) * 1979-04-09 1980-10-21 Toshiba Corp Semiconductor device
JPS5635460A (en) * 1979-08-29 1981-04-08 Nec Corp Logic circuit using integrated injection type logic element

Also Published As

Publication number Publication date
JPS5852870A (ja) 1983-03-29
HK45986A (en) 1986-06-27
IT8223345A0 (it) 1982-09-20
MY8600559A (en) 1986-12-31
FR2513810A1 (fr) 1983-04-01
GB2106320A (en) 1983-04-07
JPH0412032B2 (it) 1992-03-03
FR2513810B1 (fr) 1986-06-27
GB2106320B (en) 1985-07-10
DE3235412A1 (de) 1983-05-26

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19950927