FR2513810B1 - Dispositif a circuits integres a semiconducteurs et procede de fabrication de ce dispositif - Google Patents

Dispositif a circuits integres a semiconducteurs et procede de fabrication de ce dispositif

Info

Publication number
FR2513810B1
FR2513810B1 FR8213878A FR8213878A FR2513810B1 FR 2513810 B1 FR2513810 B1 FR 2513810B1 FR 8213878 A FR8213878 A FR 8213878A FR 8213878 A FR8213878 A FR 8213878A FR 2513810 B1 FR2513810 B1 FR 2513810B1
Authority
FR
France
Prior art keywords
manufacturing
integrated circuit
semiconductor integrated
circuit device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8213878A
Other languages
English (en)
Other versions
FR2513810A1 (fr
Inventor
Isao Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2513810A1 publication Critical patent/FR2513810A1/fr
Application granted granted Critical
Publication of FR2513810B1 publication Critical patent/FR2513810B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR8213878A 1981-09-25 1982-08-09 Dispositif a circuits integres a semiconducteurs et procede de fabrication de ce dispositif Expired FR2513810B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56150607A JPS5852870A (ja) 1981-09-25 1981-09-25 半導体集積回路装置

Publications (2)

Publication Number Publication Date
FR2513810A1 FR2513810A1 (fr) 1983-04-01
FR2513810B1 true FR2513810B1 (fr) 1986-06-27

Family

ID=15500577

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8213878A Expired FR2513810B1 (fr) 1981-09-25 1982-08-09 Dispositif a circuits integres a semiconducteurs et procede de fabrication de ce dispositif

Country Status (7)

Country Link
JP (1) JPS5852870A (fr)
DE (1) DE3235412A1 (fr)
FR (1) FR2513810B1 (fr)
GB (1) GB2106320B (fr)
HK (1) HK45986A (fr)
IT (1) IT1153732B (fr)
MY (1) MY8600559A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS616079A (ja) * 1984-06-19 1986-01-11 Fukuyama Gomme Kogyo Kk 弾性体クロ−ラ
JPS6267851A (ja) * 1985-09-20 1987-03-27 Hitachi Ltd 半導体集積回路装置
JPH0715830Y2 (ja) * 1989-01-13 1995-04-12 オーツタイヤ株式会社 クローラ用弾性履帯
JPH0562396U (ja) * 1992-05-18 1993-08-20 福山ゴム工業株式会社 ゴムクローラ
JP2008205418A (ja) * 2007-02-19 2008-09-04 Mikio Shimoyama いつでもスイッチ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50124674A (fr) * 1974-02-19 1975-09-30
DE2624584A1 (de) * 1976-06-01 1977-12-15 Siemens Ag Anordnung zur versorgung von i hoch 2 l-schaltungen mit verschiedenen stroemen
NL7614610A (nl) * 1976-12-31 1978-07-04 Philips Nv Inrichting voor het koppelen van in i2l techniek bedreven transistoren met een op hogere rust- stroom ingestelde transistor.
NL7700420A (nl) * 1977-01-17 1978-07-19 Philips Nv Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan.
DE2722667C2 (de) * 1977-05-18 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Integrierte Halbleiterschaltung mit Invertern vom I↑2↑ L-Typ
FR2404962A1 (fr) * 1977-09-28 1979-04-27 Ibm France Dispositif semi-conducteur du genre cellule bistable en technologie a injection de courant, commandee par l'injecteur
DE2837519A1 (de) * 1978-08-28 1980-03-20 Philips Patentverwaltung Monolithische integrierte halbleiter- schaltungsanordnung
JPS55127060A (en) * 1979-03-24 1980-10-01 Mitsubishi Electric Corp Iil integrated circuit
JPS55134962A (en) * 1979-04-09 1980-10-21 Toshiba Corp Semiconductor device
JPS5635460A (en) * 1979-08-29 1981-04-08 Nec Corp Logic circuit using integrated injection type logic element

Also Published As

Publication number Publication date
JPS5852870A (ja) 1983-03-29
HK45986A (en) 1986-06-27
IT8223345A0 (it) 1982-09-20
MY8600559A (en) 1986-12-31
FR2513810A1 (fr) 1983-04-01
GB2106320A (en) 1983-04-07
JPH0412032B2 (fr) 1992-03-03
GB2106320B (en) 1985-07-10
DE3235412A1 (de) 1983-05-26
IT1153732B (it) 1987-01-14

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Legal Events

Date Code Title Description
ST Notification of lapse