CN1135611C - 使用各向异性导电粘接剂的半导体装置的安装方法 - Google Patents

使用各向异性导电粘接剂的半导体装置的安装方法 Download PDF

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CN1135611C
CN1135611C CNB008000379A CN00800037A CN1135611C CN 1135611 C CN1135611 C CN 1135611C CN B008000379 A CNB008000379 A CN B008000379A CN 00800037 A CN00800037 A CN 00800037A CN 1135611 C CN1135611 C CN 1135611C
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semiconductor device
circuit substrate
mentioned
adhesive resin
adhesive
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CN1293823A (zh
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�ɱ߼���
渡边真
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Citizen Watch Co Ltd
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Citizen Watch Co Ltd
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Abstract

一种使用各向异性导电粘接剂的半导体装置的安装方法，把各向异性导电粘接剂(13)配置到电路基板(17)上边，使设置在半导体装置(16)上的突起电极(14)与电路基板(17)上边的布线图形(15)进行位置对准后，把半导体装置(16)载置到电路基板(17)上边，用加压加热夹具(18)，用比各向异性导电粘接剂(13)的粘接剂树脂(11)的硬化温度还低的温度边加热边加压，把半导体装置(16)临时加压附着到电路基板(17)上，然后，用使粘接剂树脂(11)硬化的温度加热粘接剂树脂(11)使之硬化，把临时加压附着上的半导体装置(16)粘接到电路基板(17)上边。

Description

使用各向异性导电粘接剂的半导体装置的安装方法
技术领域
本发明涉及使用各向异性导电粘接剂把半导体装置连接固定到电路基板上边的半导体装置的安装方法。
技术背景
使用各向异性粘接剂把半导体装置连接固定到电路基板上边的半导体装置的安装方法，在此之前已实用化。使用图11到图16，对该现有的半导体装置的安装方法进行说明。
图11到图14的剖面图示出了现有的半导体装置的安装方法的各个工序。如这些图所示，在本安装方法中，连接在电路基板17上边设置的布线图形15和在半导体装置16上形成的突起电极14。在进行该连接之际，要作成为使得把在各向异性导电粘接剂13中含有的具有导电性的导电粒子12夹入在布线图形15和突起电极14之间，且借助于该导电粒子12使两者导通。
各向异性导电粘接剂13是一种向由环氧系粘接剂构成的热硬化性的粘接剂树脂11中混入导电粒子12以使之具有导电性的粘接剂，在基底薄膜上边形成膜状，并用保护层薄膜进行保护。该导电性粒子12是由直径5到10微米的银或焊料等构成的金属制造的粒子，或对塑料制造的树脂粒子的表面施行了镀金(Au)的粒子。
电路基板17，在由玻璃环氧树脂或陶瓷或者玻璃构成的基板上边形成有布线图形15。该布线图形15是由铜或金构成的，或者由在液晶面板等中使用的ITO(铟和锡的氧化物)膜等构成。
安装半导体装置的作业工序如下。
首先，如图11所示，把各向异性导电粘接剂13复制到电路基板17的连接半导体装置16的部分上。
其次，如图12所示，使电路基板17的布线图形15和在半导体装置16上形成的突起电极14进行位置对准后，把半导体装置16安装到相向的电路基板17上边。
接着，如图13所示，用内置加热器的加热加压夹具18一边加压力P一边加热，把半导体装置热压粘接到电路基板17上，使各向异性导电粘接剂13的粘接剂树脂11硬化。
这样一来，若使粘接剂树脂11硬化，则如图14所示，半导体装置16被粘接固定到电路基板17上边，结果就变成为得以借助于各向异性导电粘接剂13的导电粒子12，来保持半导体装置16的突起电极14和布线图形15间的导通。
若用该安装方法，虽然为了用加热加压夹具18使粘接剂树脂11硬化，一开始要用必要的温度进行热压粘接，但是，环氧系粘接剂等的热硬化性的粘接剂树脂11，在因加热到某一温度以上时就急剧地软化而变成为半熔融状态之后，就会进行硬化反应而硬化。在图15和图16中扩大示出了热压粘接前后的情况。
图15示出了已把半导体装置16载置到电路基板17上边时的状态，就是说示出了用图13所示的加热加压夹具18进行的加热加压前的状态，为便于理解突起电极14和布线图形15之间存在的导电粒子12的情况，扩大示出了半导体装置16和电路基板17的一部分。在这一时刻，由于是在加热加压之前，故粘接剂树脂11保持着复制后的薄膜的原样不变。
其次，如图16所示，当为了使粘接剂树脂11硬化，用加热加压夹具18边加热到使粘接剂树脂11产生硬化反应的温度边给半导体装置16加上压力P时，粘接剂树脂11在急速地硬化的同时因被压坏而流动，因而从半导体装置16向外边吐出出来。由于突起电极14和布线图形15之间的间隔变得最窄，故位于突起电极14附近的粘接剂树脂11受到突起电极14强烈地挤压流动得最大。
由于导电粒子12也将因该粘接剂树脂11的流动而一起被向突起电极14的外边挤压出去，故在之后，在粘接剂树脂11进行硬化完成热压粘接时，在从突起电极14的下表面向外吐出去的部分内存在着很多导电粒子12。为此，在突起电极14和布线图形15之间剩下的导电粒子的个数将变得很少。
如上所述，若使用现有的安装方法，由于归因于进行热压粘接时的加热而存在着各向异性导电粘接剂13的粘接剂树脂11硬化前的一时性的软化现象，和归因于向半导体装置施加的加压力而挤出导电粒子12，从而使在突起电极14和布线图形15之间剩下的导电粒子12的个数很少，故存在着突起电极14和布线图形15之间的连接电阻增高的问题。
要想压低该连接电阻，必须在突起电极14和布线图形15之间尽可能多地剩下导电粒子12，但是，要这么做的话，就必须展宽两者的连接部分的面积，以便可以捕获更多的导电粒子12。
但是，如果要进行高密度安装，就必须减小连接部分的面积，所以要在突起电极14和布线图形15之间捕获许多的导电粒子12是困难的，因而在连接部分中剩下的导电粒子12的个数不会多。因此，上边所说的现有的安装方法，连接电阻值高，且易于变成为不稳定的连接，故不适合于进行高密度安装。
本发明就是为解决在使用各向异性导电粘接剂的半导体装置的安装方法中这些问题而发明的，目的是增加在半导体装置的突起电极和电路基板的布线图形之间捕获的导电粒子的个数，即便是减小连接部分的面积，也可以降低连接电阻且可以进行稳定的连接，使之适合于高密度安装。
发明内容
使用本发明的各向异性导电粘接剂的半导体装置的安装方法，其特征是：为了实现上述目的，具有如下的从(1)到(4)的工序。
(1)把向热硬化性的粘接剂树脂中混入导电粒子而构成的各向异性导电粘接剂配置到电路基板上边的已形成了布线图形的部分上；
(2)使设置在半导体装置上的突起电极和上述电路基板上边的布线图形进行位置对准后把该半导体装置载置到该电路基板上；
(3)用比上述各向异性导电粘接剂的粘接剂树脂的硬化温度还低的温度(T1)加上使所述导电粒子与所述突起电极和布线图形相接触的第1压力(P1)，把上述半导体装置临时加压附着到上述电路基板上；
(4)在加上比所述第1压力(P1)大的第2压力(P2)的同时、用比上述粘接剂树脂开始硬化的温度高的温度(T2)使该粘接剂树脂硬化，把上述临时加压附着后的半导体装置粘接到上述电路基板上。
在上述的半导体装置的安装方法中，理想的是借助于把上述半导体装置临时加压附着到上述电路基板上的工序，形成半导体装置的突起电极和电路基板的布线图形之间的电导通。
此外，可以采用通过已设定为比使上述粘接剂树脂开始硬化的温度高的温度(T2)和所述第2压力(P2)的加热加压夹具进行热压粘接，进行上述(4)的工序。
或者，也可以把已临时附着上上述半导体装置的电路基板放到已设定为上述粘接剂树脂硬化温度的炉内进行上述(4)的工序，或把上述电路基板放到已设定为同样温度的热板的上边进行上述(4)的工序。
采用本发明的半导体装置的安装方法，由于在把半导体装置安装到电路基板上边之际，以各向异性导电粘接剂的粘接剂树脂的流动性低的状态的温度(T1)、对导电粒子加以使所述突起电极和布线图形接触的第1压力(P1)进行临时加压附着，故导电粒子在粘接剂树脂的粘度低的状态下被突起电极和布线图形夹入其中，在突起电极和布线图形之间剩下许多导电粒子。此后边用比第1压力(P1)大的第2压力(P2)加压、边用比上述粘接剂树脂开始硬化的温度高的温度(T2)使其硬化，故可以在连接部分内剩下许多导电粒子的状态下，进行连接电阻值低且稳定的连接。此外，由于在连接部分内剩下许多导电粒子，故可以缩小连接部分的面积，可以用比现有技术更为微细的连接节距进行连接。
附图说明
图1的概略剖面图，扩大示出了在本发明的半导体装置的安装方法中使用的各向异性导电粘接剂的一部分。
图2到图5的概略剖面图，按顺序示出了用来说明本发明的半导体装置的安装方法的一个实施例的各个工序。
图6和图7的概略剖面图，分别扩大示出了图3和图4所示的工序的关键部位。
图8的曲线图，与现有例进行比较地示出了夹持在用本发明的半导体装置的安装方法安装的半导体装置的突起电极和电路基板的布线图形之间的导电粒子个数。
图9的概略剖面图，示出了取代本发明的半导体装置的安装方法中的图4所示的工序的另一工序的例子。
图10的概略剖面图，示出了取代本发明的半导体装置的安装方法中的图4所示的工序的再一工序的例子。
图11到图14的概略剖面图，按顺序示出了用来说明现有的半导体装置的安装方法的各个工序。
图15和图16的概略剖面图，分别扩大示出了图12和图13所示的工序的关键部位。
优选实施例
以下，用图1到图10，详细地说明用来实施本发明的半导体装置的安装方法的优选实施例。另外，对于与图11到图16所示的现有例对应的部分，赋予同一标号。
图1的概略剖面图，扩大示出了在本发明的半导体装置的安装方法中使用的各向异性导电粘接剂的一部分。另外，各向异性导电粘接剂，在使用之前，虽然在基底薄膜上边形成为薄膜状，并用保护薄膜保护相反一侧的面，但这些都没有画出来。该各向异性导电粘接剂13的构造是：向厚度从15微米到100微米左右的粘接剂树脂11的膜内，混入许多直径从3微米到数十微米左右大小的导电粒子12，使之在厚度方向上具有导电性。
粘接剂树脂11的厚度虽然规定为从15微米到100微米左右，但具体的厚度要根据在图6等所示的要想安装的半导体装置16上形成的突起电极14的高度(从基板算起的高度)和在电路基板17上边设置的布线图形15的高度(从基板算起的高度)来决定。例如倘假定突起电极14的高度为20微米，布线图形的高度为18微米，由于粘接剂树脂11应变成为两者合计的高度(厚度)以上的厚度，故要设定为作为两者合计的38微米以上的厚度。
此外，粘接剂树脂可以用印刷法或复制法等形成为膜状，但考虑到形成时的精度，实际上要形成为再加厚10微米左右。因此在上述情况下的粘接剂树脂11，要形成为比38微米加厚10微米左右，即形成为50微米左右的厚度。
粘接剂树脂使用环氧树脂、苯酚树脂等的绝缘性热硬化树脂，例如，使用环氧系热硬化性树脂。
混入到粘接剂树脂11中的导电粒子12，具有直径3到数十微米左右的大小，是由银或焊料等构成的金属粒子，或对塑料制造的树脂粒子的表面实施了镀金(Au)的粒子。
导电粒子12的大小随着想要连接的布线图形15彼此间的间隙(间隔)而变化。例如，若间隙为10微米，则要把导电粒子12的直径设定得比10微米小，以便在图形彼此之间不产生短路。使该导电粒子12对于粘接剂树脂11以4wt％(重量％)的量添加进去之后，进行混合，制成各向异性导电粘接剂13。
图2以下所示的电路基板17，在由玻璃环氧树脂或陶瓷或玻璃构成的基板上边已经形成了布线图形15。该布线图形15是由铜或金构成的，或者，由在液晶面板等中使用的ITO(铟和锡的氧化物)膜等构成。
把半导体装置16安装到电路基板17上的作业工序如下。
在本安装方法中，也与现有技术一样，连接在电路基板17上边设置的布线图形15和在半导体装置上形成的突起电极14。在进行该连接之际，要作成为使得把在各向异性导电粘接剂13中含有的具有导电性的导电粒子12夹入在布线图形15和突起电极14之间，且借助于该导电粒子12使两者导通。另外，该突起电极14是用焊锡、金或铜等的材料用电镀法或真空蒸镀法形成的。
首先，如图2所示，用复制等方法，把各向异性导电粘接剂13配置到电路基板17上边的已形成了要载置半导体装置16的布线图形的部分上。该各向异性导电粘接剂13，配置在与要进行安装的半导体装置16在平面上相同的大小，或在整个外周上都比其外形大(宽)约2微米的范围内。
在要复制在基底薄膜上边形成的各向异性导电粘接剂13的情况下，要这样地进行：预先使各向异性导电粘接剂13与要进行复制的区域对准后进行切断，然后再把该已切断的各向异性导电粘接剂13配置到复制区域上。
然后，采用使用用加热器加热到从80℃到100℃的加热头(未画出来)，对该已配置好了的各向异性导电粘接剂13进行热压粘接的办法，复制到电路基板17上边。这时的压力，只要是可以使各向异性导电粘接剂13粘贴到电路基板17上边那种大小的压力即可。然后，剥离基底薄膜。
其次，如图3所示，使在电路基板17上边形成的布线图形15和在半导体装置16上形成的突起电极14进行位置对准后，把半导体装置16载置到电路基板17上边。接着，用内置加热器的加热加压夹具18，从未形成突起电极14的背面一侧，以规定的压力P1对半导体装置16进行加压的同时，以比使各向异性导电粘接剂13的粘接剂树脂11的硬化反应开始的温度(叫做‘硬化温度’)还低的温度T1，把半导体装置16热压附着(叫做‘临时热压附着’)到电路基板17上边进行安装。
加热加压夹具18具备加热器和热电偶，其构成为可以用加热器进行加热，用热电偶进行温度控制。
该临时热压附着，可以在粘接剂树脂11的流动性低且可以保持高粘度状态的温度下进行。该温度是比各向异性导电粘接剂13的粘接剂树脂11的硬化温度还低的温度，具体地说，是从30℃到80℃这种程度的温度。
此外，临时热压附着的压力P1，对于连接突起电极14的部分的面积，是大约200到1000kg/cm2的压力。该临时热压附着的压力，只要是使各向异性导电粘接剂13内的导电粒子12与半导体装置16的突起电极14和电路基板17的布线图形15连接，使两者间电导通的那种程度的压力即可。
此时，粘接剂树脂在稍微软化的程度下流动性低，由于不容易从突起电极14和布线图形15之间流出，所以可以在两者间夹持许多导电粒子12。
接着，如图4所示，用加热加压夹具18，边用压力P2加压边用各向异性导电粘接剂13的粘接剂树脂11的硬化温度以上的温度T2进行加热(T2＞T1)。
在这种情况下，在把环氧树脂用做粘接剂树脂11的情况下，该进行加热的温度T2规定为150℃到250℃左右，加热5秒到30秒钟，此外进行加压的压力P2，对于半导体装置16的突起电极14的进行连接的面积约为200到1000kg/cm2左右的压力。该压力P2可以与上边所说的临时热压附着的压力P1不同，理想的是比P1大(P1＜P2)。
当象这样地用温度T2进行利用加热加压夹具18实施的加压加热时，各向异性导电粘接剂13的粘接剂树脂11虽然会临时软化而变成为半熔融状态，但是，由于导电粒子12被夹持在突起电极14和布线图形15之间故不会流出来，然后，进行硬化反应使粘接剂树脂11硬化，如图5所示，半导体装置16被粘接到电路基板17上边，结果变成为半导体装置16的突起电极14和布线图形15之间的导通也借助于被夹持在中间的多个导电粒子12而得以确实地保持。
如上所述，若用本发明的半导体装置的安装方法，由于采用进行在临时热压附着后使粘接剂树脂11硬化这么一种2阶段的加热加压的办法来载置半导体装置，故将收到与现有技术不同的下述的作用效果。用图6和图7说明该作用效果。
图6和图7的概略剖面图，为便于理解夹持在突起电极14和布线图形15之间的导电粒子12的情况，扩大示出了图3和图4所示的工序的关键部位。在本发明中，如上所述，在把半导体装置16载置到电路基板17上之际，如现有技术那样，在此之前先经过图6所示的临时热压附着的工序后进行充分的加压，而不临时性地进行使各向异性导电粘接剂13的粘接剂树脂11硬化的加热加压附着。
为此，在如图7所示要进行使粘接剂树脂11硬化的加热加压时，导电粒子12已经被夹持在突起电极14和布线图形15之间(在图中为4个)。因此，即便是在之后进行用来使粘接剂树脂11硬化的加热，导电粒子12也得以维持被夹持在突起电极14和布线图形15之间的状态，即便是例如粘接剂树脂11有时候进行流动，也不会流出到突起电极14的外边。因此，可以在使突起电极14和布线图形15进行接触的同时在双方之间捕获更多的导电粒子12。另外，导电粒子12由于被夹持在突起电极14和布线图形15之间有若干变形(被压垮)，故在导电粒子12和突起电极14及布线图形15之间的各自的接触面积变宽。因此导电性变得更好，降低连接电阻。
在这里，在图8中，示出的是对用现有的半导体装置的安装方法进行安装的情况，和用本发明的半导体装置的安装方法进行安装的情况下的、在突起电极和布线图形之间存在的导电粒子的个数，进行比较的情况。该图的纵轴示出的是导电粒子的个数。由该图可知，在用本发明的安装方法进行安装的情况下，平均存在8个导电粒子，而若用现有的安装方法则平均约为5.5个。因此，可知本发明的安装方法这一方，在连接部分中剩下的导电粒子多。
另外，对于透明的玻璃板，用本发明的方法和现有的方法分别安装半导体装置，以便能够观察突起电极和布线图形之间的连接部分，并测定了在突起电极部分中剩下的导电粒子12的个数。
在上边所说的实施例中，虽然用使用加热加压夹具18的加压加热工序进行使各向异性导电粘接剂13的粘接剂树脂11完全硬化的工序，但是，也可以这样地进行：如图9所示，把临时加压附着上半导体装置16的电路基板17放置到已设定为本身为粘接剂树脂11的硬化温度的150℃到250℃的炉子20中，从炉子20的热源21供给热。
或者，如图10所示，也可以这样地进行：把临时加热附着上半导体装置16的电路基板17放置到已设定为作为粘接剂树脂11的硬化温度的150℃到250℃的热板30上边，加热5秒到30秒左右。另外，热板30内置有加热器31。
工业上利用的可能性
若用本发明的半导体装置的安装方法，由于在用各向异性导电粘接剂把半导体装置热压粘接到电路基板上边之际，在使各向异性导电粘接剂硬化之前，用粘接剂树脂的流动性低的温度、对各向异性导电粘接剂中的导电粒子加以使突起电极和布线图形接触的第1压力而进行临时加压附着，故可以把许多导电粒子夹持在突起电极和布线图形之间。此后，边加上比第1压力大的第2压力、边以粘接剂树脂硬化的温度使该粘接剂树脂硬化，从而把临时加压的半导体装置连接到电路板上。因此，由于导电粒子发生变形(压碎)，可以进行连接电阻值低且稳定的连接，可以进行可靠性高的安装。
此外，由于导电粒子可以在连接部分内剩下得更多，故可以维持在此之前相同的连接电阻的同时缩小连接部分的面积。因此，还可以进行向比现有技术更为微细的布线图形的连接，适合于高密度安装。

Claims (5)

1.一种使用各向异性导电粘接剂的半导体装置的安装方法，其特征是具备下述工序：
把向热硬化性的粘接剂树脂中混入导电粒子而构成的各向异性导电粘接剂配置到电路基板上边的已形成了布线图形的部分上；
使设置在半导体装置上的突起电极和上述电路基板上边的布线图形进行位置对准后把该半导体装置载置到该电路基板上；
用比上述各向异性导电粘接剂的粘接剂树脂的硬化温度还低的温度(T1)、加上使所述导电粒子与所述突起电极和布线图形相接触的第1压力(P1)，把上述半导体装置临时加压附着到上述电路基板上；
在加上比所述第1压力(P1)大的第2压力(P2)的同时、用比上述粘接剂树脂开始硬化的温度高的温度(T2)使该粘接剂树脂硬化，把上述临时加压附着后的半导体装置粘接到上述电路基板上。
2.权利要求1所述的使用各向异性导电粘接剂的半导体装置的安装方法，其特征是：借助于把上述半导体装置临时加压附着到上述电路基板上的工序，形成该半导体装置的上述突起电极和该电路基板的该布线图形之间的电导通。
3.权利要求1所述的使用各向异性导电粘接剂的半导体装置的安装方法，其特征是：通过使用已设定为比上述粘接剂树脂开始硬化的温度高的温度(T2)和所述第2压力(P2)的加热加压夹具进行热压粘接，进行使上述临时加压附着后的半导体装置粘接到电路基板上边的工序。
4.权利要求1或2所述的使用各向异性导电粘接剂的半导体装置的安装方法，其特征是：把上述已进行了临时加压附着上半导体装置的电路基板放置到已设定为上述粘接剂树脂硬化温度的炉内，进行使上述临时加压附着后的半导体装置粘接到电路基板上边的工序。
5.权利要求1所述的使用各向异性导电粘接剂的半导体装置的安装方法，其特征是：把上述已进行了临时加压附着上半导体装置的电路基板放置到已设定为上述粘接剂树脂硬化的温度的热板上边，进行使上述临时加压附着后的半导体装置粘接到电路基板上边的工序。
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US6498051B1 (en) 2002-12-24
BR0004470A (pt) 2000-12-19
KR100382759B1 (ko) 2003-05-09
DE60001776T2 (de) 2004-02-05

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