WO2015002056A1 - Procédé pour fabriquer un film de barrière contre les gaz - Google Patents

Procédé pour fabriquer un film de barrière contre les gaz Download PDF

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Publication number
WO2015002056A1
WO2015002056A1 PCT/JP2014/066933 JP2014066933W WO2015002056A1 WO 2015002056 A1 WO2015002056 A1 WO 2015002056A1 JP 2014066933 W JP2014066933 W JP 2014066933W WO 2015002056 A1 WO2015002056 A1 WO 2015002056A1
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gas barrier
layer
light
barrier film
photothermal conversion
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PCT/JP2014/066933
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English (en)
Japanese (ja)
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和喜 田地
健治 属
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コニカミノルタ株式会社
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
    • B32B2037/1253—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives curable adhesive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/724—Permeability to gases, adsorption
    • B32B2307/7242—Non-permeable
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
    • B32B2309/04—Time
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
    • B32B2309/08—Dimensions, e.g. volume
    • B32B2309/10—Dimensions, e.g. volume linear, e.g. length, distance, width
    • B32B2309/105—Thickness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
    • B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
    • B32B2310/0825—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation using IR radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates

Definitions

  • the present invention relates to a method for producing a gas barrier film. More specifically, the present invention relates to a method for producing a transparent gas barrier film excellent in flexibility, which is used for gas shielding of electronic devices such as liquid crystals, organic electroluminescence (organic EL), solar cells, and electronic paper.
  • electronic devices such as liquid crystals, organic electroluminescence (organic EL), solar cells, and electronic paper.
  • a film substrate such as a transparent plastic is inferior in gas barrier property to a glass substrate. It has been found that when a base material with inferior gas barrier properties is used, water vapor or oxygen permeates, which adversely affects the performance and life of electronic devices, for example. For example, in an electronic device such as an organic EL diode that forms an organic layer, the organic layer is weak against moisture and oxygen, and the light emission performance and life are deteriorated by contact with moisture and oxygen.
  • a film having a gas barrier property (hereinafter referred to as a gas barrier layer) is formed on a film base material on the film base material, and this formed product is used as a gas barrier film.
  • the gas barrier layer is modified to be dense, that is, without defects and having a small pore diameter. It needs to be in a state.
  • a method for modifying the gas barrier layer it is known to perform thermal annealing on the gas barrier layer, but in order to sufficiently improve the gas barrier property, the temperature is higher than the heat resistant temperature of the film substrate. Therefore, it cannot be applied to the gas barrier layer on the film substrate.
  • the gas barrier layer in order to modify the gas barrier layer, it is necessary to absorb the laser light in the gas barrier layer, so that materials applicable to the gas barrier layer are limited.
  • a method of mixing a light absorber with the gas barrier layer is also conceivable, but in this case, the melting point and the crystallization temperature differ depending on the mixed material, and crystal grain boundaries and cracks are generated.
  • the present invention has been made in view of the above problems and situations, and its solution is to produce a gas barrier film having a high gas barrier property while preventing the occurrence of crystal grain boundaries and cracks. It is providing the manufacturing method of a barrier film.
  • the present inventor has laminated a layer having a gas barrier property that has been modified and a layer that performs photothermal conversion in the process of studying the cause of the above-described problem.
  • the present inventors have found that the problem can be solved and have reached the present invention.
  • a method for producing a gas barrier film comprising: 2. In the light irradiation step, 2. The method for producing a gas barrier film according to claim 1, wherein light having a maximum intensity wavelength of 400 nm or less is irradiated. 3.
  • the photothermal conversion layer is formed of a material having a band gap of 1.0 eV or more and 4.0 eV or less, 4.
  • the lamination step While forming the photothermal conversion layer with a material having a band gap of 2.0 eV or more and 3.5 eV or less, The method for producing a gas barrier film according to claim 4, wherein the precursor layer is formed of a material having a band gap of 3.5 eV or more. 6).
  • the lamination step Forming the photothermal conversion layer with a material containing at least one of Ti, Ga, As, P and S; 6.
  • Item 7 In the light irradiation step, Item 7.
  • As the film substrate a band-shaped material is used,
  • the light irradiation step includes Having a transporting process for transporting the film substrate in a roll-to-roll manner, Item 8.
  • the method for producing a gas barrier film according to claim 8 wherein the film base material is conveyed at a speed of 5 m / min or more. 10.
  • In the lamination step 10.
  • the light-to-heat conversion layer since the light-to-heat conversion layer separate from the precursor layer (gas barrier layer) is irradiated with light to generate heat, the light-to-heat conversion layer does not need to have a function as a precursor layer (gas barrier layer). It is thought that a fever is possible. And since the precursor layer is modified by the heat generated instantaneously in this way to form a gas barrier layer, it is prevented that excessive heat is generated in the photothermal conversion layer, and the film base material is melted. Is thought to be prevented. Therefore, unlike the case where the precursor layer (gas barrier layer) is heated to generate heat, the temperature of the heat treatment for modification is not limited to the melting temperature of the film base material, It is considered that a high gas barrier film can be produced.
  • the degree of freedom of materials applicable to the precursor layer (gas barrier layer) can be increased, and the precursor layer (gas barrier layer) Since it is not necessary to mix a light absorber with the layer), it is considered that the occurrence of crystal grain boundaries and cracks can be prevented.
  • the method for producing a gas barrier film of the present invention comprises, on a resin film substrate, laminating at least a light-to-heat conversion layer that converts light energy into heat and a precursor layer that is modified by heat treatment to become a gas barrier layer.
  • This feature is a technical feature common to the inventions according to claims 1 to 12.
  • the light irradiation step irradiation with light having a maximum intensity wavelength of 400 nm or less is preferable because the gas barrier can be improved.
  • the light irradiation step it is preferable to irradiate light emitted from a laser light source because the gas barrier property can be further improved.
  • the photothermal conversion layer in the stacking step, is formed of a material having a band gap of 1.0 eV or more and 4.0 eV or less, and the precursor layer is formed of a material having a band gap of 2.0 eV or more. Formation is preferable because the light-to-heat conversion layer can efficiently generate heat by light irradiation. More preferably, the photothermal conversion layer is formed of a material having a band gap of 2.0 eV or more and 3.5 eV or less, and the precursor layer is formed of a material having a band gap of 3.5 eV or more.
  • the said lamination process while forming the said photothermal conversion layer with the material containing at least 1 sort (s) of Ti, Ga, As, P, and S, with the material containing at least 1 sort (s) of Si, In, Zn, Sn, and Al. It is preferable to form the precursor layer.
  • the measurement of the band gap was computed from the measurement result of the light absorbency by reflection type
  • the light irradiation step in the light irradiation step, it is preferable to irradiate light in a line shape because productivity can be improved. Moreover, a strip-shaped thing is used as the said film base material,
  • the said light irradiation process has a conveyance process which conveys the said film base material by a roll toe roll system, and with respect to the said film base material conveyed by the said conveyance process It is preferable to irradiate with light because the productivity can be further improved. Moreover, in the said conveyance process, conveying the said film base material at a speed of 5 m / min or more can improve productivity further, and is preferable.
  • the laminating step it is preferable to laminate the precursor layer and the photothermal conversion layer in this order on the film base material because the gas barrier property can be further improved.
  • the laminating step it is preferable to form the heat insulating layer on the film base material and then laminate the precursor layer and the photothermal conversion layer because the gas barrier property can be further improved.
  • the said lamination process after forming a heat insulation layer on the said film base material, it is good also as laminating
  • ⁇ is used to mean that the numerical values described before and after it are included as a lower limit value and an upper limit value.
  • the gas barrier film 1 a of the present invention includes a heat insulating layer 11, a gas barrier layer 12, and a photothermal conversion layer 13 in this order on a film substrate 10.
  • the heat insulation layer 11 does not need to be provided.
  • the gas barrier film 1b of the present invention which is another embodiment has a heat insulating layer 11, a light-to-heat conversion layer 13, and a gas barrier layer 12 on a film base material 10. In order.
  • the film base material 10 will not be specifically limited if it is produced with resin which can hold
  • Examples of the material of the film substrate 10 include polyacrylate ester, polymethacrylate ester, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyethylene naphthalate (PEN), polycarbonate (PC), polyarylate, poly Polyethylene copolymers such as vinyl chloride (PVC), polyethylene (PE), ethylene-cyclic olefin, polypropylene (PP), polystyrene (PS), polyamide (PA), polyether ether ketone, polysulfone, polyether sulfone, polyimide, A heat-resistant transparent film substrate (product name Sila-DEC, manufactured by Chisso Corporation) having a basic skeleton of a polymer such as polyetherimide, silsesquioxane having an organic-inorganic hybrid structure, and the polymer It can be given a like substrate formed by laminating two or more layers.
  • PVC vinyl chloride
  • PE polyethylene
  • PP ethylene-cyclic ole
  • polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyethylene naphthalate (PEN), polycarbonate (PC), and the like are preferably used in terms of cost and availability. Further, in terms of optical transparency, heat resistance, and adhesion to an inorganic layer, a heat resistant transparent film having a basic skeleton of silsesquioxane having an organic-inorganic hybrid structure is preferably used.
  • the thickness of the film substrate 10 is preferably 5 to 500 ⁇ m, more preferably 25 to 250 ⁇ m, from the viewpoints of handleability and mechanical strength.
  • the glass transition temperature (Tg) of the film substrate 10 is preferably 100 ° C. or higher.
  • a heat shrinkage rate is also low.
  • the film substrate 10 is preferably transparent in visible light. If the film substrate 10 is transparent and the gas barrier layer 12 and the photothermal conversion layer 13 produced on the film substrate 10 are also transparent, a transparent gas barrier film 1a (1b) is obtained. This is because a transparent substrate such as an element can be formed.
  • the film substrate 10 using the above-described polymer or the like may be an unstretched film or a stretched film. Further, the surface of the film substrate 10 may be subjected to corona treatment.
  • the heat insulating layer 11 is a layer that prevents heat from being transmitted from the photothermal conversion layer 13 to the film base material 10 when the photothermal conversion layer 13 is heated by light irradiation in a light irradiation process described later. 10 and the photothermal conversion layer 13.
  • the thermal diffusion coefficient of the heat insulating layer 11 is preferably smaller than 1 ⁇ 10 ⁇ 5 [m 2 / s], and more preferably smaller than 5 ⁇ 10 ⁇ 6 [m 2 / s].
  • the layer thickness of the heat insulation layer 11 is 500 nm or more.
  • the thermal diffusion coefficient and the layer thickness of the heat insulating layer 11 are not limited to these.
  • the thermal diffusion coefficient was measured using PicoTR (trade name) manufactured by Picotherm, with the film thickness of the thin film to be evaluated being 100 nm.
  • the material of the heat insulating layer 11 it is preferable to use a material having a small thermal diffusion coefficient.
  • silicon oxide or an inorganic material can be used. More specifically, for example, silicon dioxide, aluminum oxide, titanium oxide, zirconium oxide, hafnium oxide, vanadium oxide, niobium oxide, tantalum oxide, Molybdenum oxide, tungsten oxide, chromium oxide, indium oxide, aluminum nitride, silicon nitride, titanium nitride, aluminum carbide, silicon carbide, titanium carbide, zirconium carbide, hafnium carbide, vanadium carbide, or the like can be used.
  • materials other than these may be used as the material of the heat insulating layer 11.
  • the heat insulating layer 11 be a porous thin film or a film formed of hollow fine particles.
  • the photothermal conversion layer 13 is a layer having a function of converting light energy into heat, and is preferably formed adjacent to the gas barrier layer 12.
  • the light absorption coefficient of the photothermal conversion layer 13 is preferably 1 ⁇ 10 5 [cm ⁇ 1 ] or more at the wavelength of light irradiated in the light irradiation step described later.
  • the layer thickness of the photothermal conversion layer 13 is preferably 20 nm or more and 500 nm or less, and more preferably 20 nm or more and 200 nm or less. However, the values of the light absorption coefficient and the layer thickness are not limited to these.
  • ⁇ is a light absorption coefficient
  • k is an extinction coefficient
  • ⁇ is a wavelength. The extinction coefficient at each wavelength was measured by ellipsometry.
  • the material of the photothermal conversion layer 13 any conventionally known material can be used as long as the function of converting light energy into heat can be imparted to the photothermal conversion layer 13.
  • the material of the photothermal conversion layer 13 has a band gap of 1.0 eV or more and 4.0 eV or less, and more preferably a band gap of 2.0 eV or more and 3.5 eV or less.
  • Examples of the material having such properties include a metal material and a semiconductor material.
  • Examples of the metal material include metal oxides, metal nitrides, and metal carbides.
  • the metal oxide TiO 2, SrTiO 3, ZnO , WO 3, Bi 2 O 3, CeO 2, BaTiO 3, PbTiO 3, CdO, InO 3, ITO, ZnO-Ga 2 O 3 (GZO), ZnO- Al 2 O 3 (AZO) or the like can be used.
  • TiN, AlN, SiN or the like can be used as the metal nitride
  • TIC, AlC, SiC or the like can be used as the metal carbide.
  • the metal material may contain two or more kinds of metal elements such as GaAsO, GaSbO, GaPO, InGaO 3 , for example.
  • As the semiconductor material CdS, GaP, InP, ZnSe, Si, GaAs, GaSb, InGa, or the like can be used.
  • the material of the photothermal conversion layer 13 includes at least one of Ti, Ga, As, P, and S.
  • the gas barrier layer 12 is a layer having a water vapor transmission rate of 0.1 g / (m 2 ⁇ 24 h) or less. However, the water vapor permeability of the gas barrier layer 12 is preferably 0.01 g / (m 2 ⁇ 24 h) or less.
  • the layer thickness of the gas barrier layer 12 is arbitrarily determined depending on the gas barrier performance and light transmittance that the gas barrier layer 12 should have, and is preferably 50 nm to 1000 nm, more preferably 100 nm to 500 nm.
  • the light transmittance of the gas barrier layer 12 is generally 80% or more, preferably 85% or more, and more preferably 90% or more, but is not limited thereto.
  • the value of light transmittance is determined by measuring the total light transmittance and the amount of scattered light using the method described in JIS K7105: 1981, that is, using an integrating sphere type light transmittance measuring device, and subtracting the diffuse transmittance from the total light transmittance. It can be obtained by the method of calculating by
  • the gas barrier layer 12 is formed by forming a precursor layer 120 and then modifying the precursor layer 120 by heat treatment.
  • the material of the precursor layer 120 any conventionally known material can be used as long as it can be modified by heat treatment to form the gas barrier layer 12.
  • the material of the precursor layer 120 has a band gap of 2.0 eV or more and 10 eV or less, and more preferably a band gap of 3.5 eV or more and 5.0 eV or less.
  • Examples of materials having such properties include metal oxides, metal nitrides, metal carbides, metal oxynitrides, metal oxycarbides, and semiconductor materials.
  • metal oxide SiO 2 , Al 2 O 3 , ZrO, SnO, HfO 2 , Y 2 O 3 , ITO, MgO, or the like can be used.
  • metal nitride SiN, AlN, TiN or the like can be used.
  • metal carbide SiC, TiC, AlC or the like can be used.
  • metal oxynitride or metal oxycarbide SiON, AlON, SiOC, SiAlON, or the like can be used.
  • metal oxide metal oxide, metal nitride, metal carbide, metal oxynitride, metal oxycarbide, etc.
  • those containing two or more metal elements such as Zn 2 SnO 4 and SrTiO 3 are used.
  • the semiconductor material CdS, GaP, InP, ZnSe, Si, GaAs, GaSb, InGa, or the like can be used. More preferably, the material of the precursor layer 120 includes at least one of Si, In, Zn, Sn, and Al.
  • the gas barrier layer 12 formed by such a precursor layer 120, the above-mentioned heat insulation layer 11, and the photothermal conversion layer 13 are transparent in visible light.
  • the film substrate 10 is also transparent, it becomes a transparent gas barrier film 1a (1b), so that it can be used as a transparent substrate such as a solar cell or an organic EL element.
  • the method for producing a gas barrier film of the present invention includes a photothermal conversion layer 13 that converts at least light energy into heat on a resin film substrate 10, and a precursor layer that is modified by heat treatment to become a gas barrier layer 12. 120, a light irradiation step of irradiating the photothermal conversion layer 13 with light after the lamination step, a gas barrier by modifying the precursor layer 120 by heat generated in the photothermal conversion layer 13 by the light irradiation step. And a modification step for forming the layer 12.
  • the heat insulating layer 11, the precursor layer 120, and the photothermal conversion layer 13 are formed and laminated in this order on one surface of the film base 10 (lamination step).
  • the heat insulating layer 11 is not necessarily formed.
  • the heat insulating layer 11, the photothermal conversion layer 13, and the precursor layer 120 are formed and laminated in this order on one surface of the film substrate 10 (lamination). Process).
  • a film forming method for each layer in addition to a dry film forming method such as an evaporation method, a sputtering method, and a CVD method, a wet film forming method such as a coating method and a printing method, an electrostatic transfer method, an aerosol deposition method, etc.
  • a dry film forming method such as an evaporation method, a sputtering method, and a CVD method
  • a wet film forming method such as a coating method and a printing method, an electrostatic transfer method, an aerosol deposition method, etc.
  • the method is not limited to these methods, and a conventionally known method can be used.
  • a layer different from the heat insulating layer 11, the photothermal conversion layer 13, and the precursor layer 120 may be formed at an arbitrary position.
  • the gas barrier film 1a (1b) is manufactured by modifying the precursor layer 120 with the heat generated in the photothermal conversion layer 13 by this light irradiation process to form the gas barrier layer 12 (modification process).
  • the maximum intensity wavelength of the irradiation light is preferably 400 nm or less.
  • the irradiation intensity of light is preferably 0.1 J / cm 2 or more, but more preferably adjusted according to the temperature that the photothermal conversion layer 13 should reach in order to modify the precursor layer 120.
  • the temperature that the light-to-heat conversion layer 13 should reach is preferably not more than the boiling point of the material contained in the light-to-heat conversion layer 13 and the precursor layer 120 (gas barrier layer 12), and more than the melting point of the precursor layer 120. It is preferable.
  • the photothermal conversion layer 13 becomes higher than the boiling point of the material contained in the photothermal conversion layer 13 or the precursor layer 120 (gas barrier layer 12), the material is vaporized, and the gas barrier film 1a (1b) having a desired performance is obtained. Can not be manufactured.
  • a laser light source As the laser light source, excimer lasers (ArF, KrF, XeCl, XeF, etc.), visible light / infrared lasers (dye laser, YAG, semiconductor laser, CO 2 laser) and various high-order harmonic lasers are used. be able to.
  • a laser light source preferably selected includes the maximum intensity wavelength of the laser light in a wavelength region where the light absorption coefficient (absorption spectrum) of the photothermal conversion layer 13 is maximum.
  • the light-to-heat conversion layer 13 is irradiated with light in a line, in other words, the light is irradiated so that the irradiation region extends linearly within the surface of the light-to-heat conversion layer 13. Is preferably irradiated.
  • a method of irradiating light in a line shape a method in which light sources with high directivity are arranged in a straight line and light is emitted from each light source, or light from a light source with low directivity is unidirectionally with a cylindrical lens or the like.
  • a method of irradiating after condensing and shaping into a line shape can be used.
  • the light irradiation time for the same region of the formed product by the lamination process is preferably 100 ⁇ sec or less, more preferably 1 to 1000 nsec. preferable.
  • Such instantaneous irradiation can be realized by using a pulsed laser or by passing the formed product by the laminating process at a high speed and passing through the irradiation region of the laser beam.
  • the light irradiation time for the same region can be controlled by the pulse width.
  • a formed product is formed by a laminating process using a belt-shaped film base material 10, and the formed product is rolled to the light irradiation process. It is preferably conveyed by a roll method (conveying step), and it is preferable to irradiate the formed product to be conveyed, and it is more preferable to convey the film substrate 10 at a speed of 5 m / min or more. If a plurality of light sources are arranged in the transport direction of the formed product, the precursor layer 120 can be modified by the heat generated in the photothermal conversion layer 13 to form the gas barrier layer 12 even if the transport speed is 100 m / min or more.
  • the light irradiation process and the modification process may be performed in a vacuum atmosphere, a nitrogen atmosphere, an oxygen atmosphere, or the like depending on the material of the precursor layer 120.
  • the light irradiation direction may be from the film substrate 10 side, from the opposite side of the film substrate 10, or from both sides thereof.
  • the gas barrier film 1a in the case of FIG. 1A
  • the light-to-heat conversion layer 13 is irradiated with light through the film substrate 10 and the heat insulating layer 11
  • the light-to-heat conversion layer 13 is irradiated with light through the precursor layer 120.
  • the gas barrier film 1b in the case of FIG.
  • the photothermal conversion layer 13 when light is irradiated from the film substrate 10 side, the photothermal conversion layer 13 is passed through the film substrate 10, the heat insulating layer 11, and the precursor layer 120.
  • the light-to-heat conversion layer 13 is directly irradiated with light.
  • the light-to-heat conversion layer 13 separate from the precursor layer 120 (the gas barrier layer 12) is irradiated with light to generate heat, so that the precursor layer 120 (the gas barrier layer 12 in the light-to-heat conversion layer 13). ) Can generate heat instantaneously because it is not necessary to have the function of). And since the precursor layer 120 is modified by the heat generated instantaneously in this way to form the gas barrier layer 12, it is possible to prevent excessive heat from being generated in the photothermal conversion layer 13, and the film base 10 is melted. Can be prevented.
  • the temperature of the heat treatment for reforming is not limited to the melting temperature of the film substrate 10, so that the gas A gas barrier film 1a (1b) having a high barrier property can be produced. Further, since it is not necessary to cause the precursor layer 120 (gas barrier layer 12) to absorb the laser beam to generate heat, the degree of freedom of a material that can be applied to the precursor layer 120 (gas barrier layer 12) can be increased. Moreover, since it is not necessary to mix a light absorber with the precursor layer 120 (gas barrier layer 12), it is possible to prevent crystal grain boundaries and cracks from occurring.
  • the light-to-heat conversion layer 13 can efficiently absorb the irradiated light. Therefore, since the photothermal conversion layer 13 can generate heat more instantaneously, it is possible to reliably prevent excessive heat from being generated in the photothermal conversion layer 13 and to ensure that the film substrate 10 is melted. Can be prevented. Therefore, since the precursor layer 120 can be modified at a higher temperature, the gas barrier film 1a (1b) having a higher gas barrier property can be produced.
  • the photothermal conversion layer 13 can be heated more instantaneously by irradiating with high intensity light. Therefore, it is possible to reliably prevent excessive heat from being generated in the photothermal conversion layer 13 and to reliably prevent the film base material 10 from being melted. Therefore, since the precursor layer 120 can be modified at a higher temperature, the gas barrier film 1a (1b) having a higher gas barrier property can be produced.
  • each region of the precursor layer 120 is continuously modified,
  • the gas barrier layer 12 can be formed. Therefore, the productivity of the gas barrier film 1a (1b) can be increased. Further, when the film substrate 10 is transported at a speed of 5 m / min or more, the productivity of the gas barrier film 1a (1b) can be further enhanced as compared with the case of transporting at a speed of less than 5 m / min. it can.
  • the precursor layer 120 and the photothermal conversion layer 13 are laminated in this order on the film base material 10 in the laminating process in order to produce the gas barrier film 1a, the photothermal conversion layer 13 and the film base material 10 The precursor layer 120 is interposed therebetween. Therefore, it is possible to reliably prevent the film base material 10 from being melted by the heat generated in the photothermal conversion layer 13. Therefore, since the precursor layer 120 can be modified at a higher temperature, the gas barrier film 1a (1b) having a higher gas barrier property can be produced.
  • the precursor layer 120 and the photothermal conversion layer 13 are laminated, the space between the photothermal conversion layer 13 and the film base material 10 is used. Therefore, the precursor layer 120 and the heat insulating layer 11 are interposed. Therefore, it is possible to more reliably prevent the film base material 10 from being melted by the heat generated in the light-to-heat conversion layer 13. Therefore, since the precursor layer 120 can be modified at a higher temperature, the gas barrier film 1a (1b) having a higher gas barrier property can be produced.
  • the photothermal conversion layer 13 when the photothermal conversion layer 13 is formed of a material having a band gap of 4.0 eV or less, preferably 3.5 eV or less, the photothermal conversion layer 13 can be efficiently heated by light irradiation.
  • gas barrier film 1a (1b) in the above embodiment and the detailed configuration of each component of the manufacturing method can be appropriately changed without departing from the gist of the present invention.
  • the gas barrier film 1a (1b) has been described as including the gas barrier layer 12 and the photothermal conversion layer 13 one by one.
  • the gas barrier film 1a (1b) may include a plurality of at least one layer. .
  • a plurality of precursor layers 120 and light-to-heat conversion layers 13 are alternately stacked on the film substrate 10, and then each of the light-to-heat conversion layers 13 is irradiated with light at a time to form each precursor layer 120.
  • the gas barrier layer 12 can be used for manufacturing.
  • a SiO 2 precursor layer was formed by EB vapor deposition to a layer thickness of 100 nm, and then a TiO 2 photothermal conversion layer was formed by EB vapor deposition to a layer thickness of 200 nm.
  • the band gap of SiO 2 is 8.9 eV
  • the band gap of TiO 2 is 3.1 eV.
  • This formed material is irradiated with light having a wavelength of 248 nm, a pulse width (light irradiation time for the same region) of 20 nsec, and an irradiation intensity of 0.3 J / cm 2 from the excimer laser, and the precursor layer is modified by heat generated in the photothermal conversion layer.
  • a gas barrier layer (1) was produced.
  • a gas barrier film (2) was produced in the same manner as the gas barrier film (1) except that the excimer laser was irradiated with light having a wavelength of 308 nm instead of light having a wavelength of 248 nm.
  • a gas barrier film (3) was produced in the same manner as the gas barrier film (1) except that light having a wavelength of 355 nm was irradiated from an excimer laser instead of light having a wavelength of 248 nm.
  • gas barrier film (4) instead of irradiating light of excimer laser with a wavelength of 248 nm, pulse width (light irradiation time for the same region) of 20 nsec, irradiation intensity of 0.3 J / cm 2, a double wave YAG laser with a wavelength of 532 nm, pulse width (same region)
  • the gas barrier film (4) was produced in the same manner as the gas barrier film (1) except that the light was irradiated with a light of 35 nsec and an irradiation intensity of 0.3 J / cm 2 .
  • SiO 2 precursor layer (layer thickness 100 nm) instead of forming by EB vapor deposition method, in addition to the precursor layer of In 2 O 3 (the thickness 100 nm) was formed by sputtering, as in the gas barrier film (2) Thus, a gas barrier film (5) was produced. Note that the band gap of In 2 O 3 is 2.5 eV.
  • gas barrier film (8) instead of forming the SiO 2 precursor layer (layer thickness 100 nm) by the EB vapor deposition method, the same manner as the gas barrier film (2) except that the SnO 2 precursor layer (layer thickness 100 nm) was formed by the sputtering method. A gas barrier film (8) was produced.
  • the band gap of SnO 2 is 3.6 eV.
  • gas barrier film (9) instead of forming the precursor layer of SiO 2 (layer thickness 100 nm) by EB vapor deposition, instead of forming the precursor layer of SiAlON (layer thickness 100 nm) by sputtering, the same as the gas barrier film (2), A gas barrier film (9) was produced.
  • the band gap of SiAlON is 4.6 eV.
  • gas barrier film (10) After forming a SiO 2 precursor layer (layer thickness 100 nm) on the substrate, a TiO 2 photothermal conversion layer (layer thickness 200 nm) was formed instead of forming a TiO 2 photothermal conversion layer (layer thickness 200 nm). After that, except that the SiO 2 precursor layer (layer thickness 100 nm) was formed, that is, the order of forming the precursor layer and the photothermal conversion layer was changed, the gas barrier was the same as the gas barrier film (2). A film (10) was produced.
  • gas barrier film (12) Similar to the gas barrier film (2), except that the TiO 2 photothermal conversion layer (layer thickness 200 nm) is formed by EB vapor deposition instead of the Si photothermal conversion layer (layer thickness 200 nm) by plasma CVD. Thus, a gas barrier film (12) was produced. Note that the band gap of Si is 1.1 eV.
  • gas barrier film (13) instead of forming the photothermal conversion layer (layer thickness 200 nm) of TiO 2 by the EB vapor deposition method, it is the same as the gas barrier film (2) except that the photothermal conversion layer (layer thickness 200 nm) of AlAs is formed by the sputtering method. Thus, a gas barrier film (13) was produced.
  • the band gap of AlAs is 2.1 eV.
  • gas barrier film (15) instead of forming the TiO 2 photothermal conversion layer (layer thickness 200 nm) by the EB vapor deposition method, it is the same as the gas barrier film (1) except that the GaN photothermal conversion layer (layer thickness 200 nm) is formed by the sputtering method. Thus, a gas barrier film (15) was produced. Note that the band gap of GaN is 3.4 eV.
  • gas barrier film (17) instead of forming the TiO 2 photothermal conversion layer (layer thickness 200 nm) by the EB vapor deposition method, a gas photothermal conversion layer (layer thickness 200 nm) was formed by the sputtering method in the same manner as the gas barrier film (1). Thus, a gas barrier film (17) was produced.
  • the band gap of Ge is 0.7 eV.
  • a gas barrier film (1) is formed in the same manner as the gas barrier film (1) except that the precursor layer and the photothermal conversion layer formed on the substrate are not irradiated with light and the precursor layer is not modified. 18) was produced.
  • a gas barrier film (19) was produced in the same manner as the gas barrier film (1) except that the photothermal conversion layer was not formed.
  • gas barrier film (20) SiO 2 precursor layer (layer thickness 100nm) and TiO 2 in the light-to-heat conversion layer (layer thickness 200 nm) instead of forming the respective EB vapor deposition, a layer of a mixture of SiO 2 and TiO 2 so that the thickness 100nm
  • a gas barrier film (20) was produced in the same manner as the gas barrier film (1) except that the (precursor layer and photothermal conversion layer) was formed by EB vapor deposition.
  • the band gap of the mixture of SiO 2 and TiO 2 is 3.2 eV.
  • the band gap of PHPS is 8.2 eV.
  • the WVTR performance evaluation value of the gas barrier film (1) was set to “1” as a reference value.
  • the ratio of the water vapor permeability of the gas barrier films (2) to (21) to the water vapor permeability of the gas barrier film (1) is calculated, and the calculated value is the WVTR of the gas barrier films (2) to (21). It was set as the performance evaluation value.
  • the average pore diameter of each gas barrier film (1) to (21) was measured by the positron annihilation method. The measurement was performed by using a nano-hole measuring device PALS-1 (manufactured by Fuji Inback Co., Ltd.) by using a low-speed positron beam having a short pulse.
  • the evaluation value of the pore diameter of the gas barrier film (1) was set to “1” as a reference value.
  • the ratio of the average pore diameter of the gas barrier films (2) to (21) with respect to the average pore diameter of the gas barrier film (1) is calculated, and the calculated value is used as the void of the gas barrier films (2) to (21).
  • the evaluation value was a pore diameter.
  • Tables 1 and 2 below show the evaluation results of the gas barrier films (1) to (21) based on the WVTR performance evaluation values and the pore diameter evaluation values as described above.
  • the gas barrier film as an example of the present invention that is, the light-heat conversion layer and the precursor layer of the gas barrier layer are laminated on the film substrate, and then light is applied to the light-heat conversion layer.
  • the gas barrier films (1) to (17) as examples of the present invention are compared with the gas barrier films (18) to (21) of the comparative examples.
  • the evaluation value of the hole diameter is small. Therefore, as can be seen from the above consideration, in the gas barrier films (1) to (17) as examples of the present invention, it is considered that the crystal grain boundaries do not exist or are sufficiently reduced even if they exist. .
  • the gas barrier films (2) and (3) irradiated with light having a maximum intensity wavelength of 400 nm or less emitted light having a wavelength greater than 400 nm. It can be seen that the pore size is small, the gas barrier layer is dense, and the gas barrier property is high compared to the gas barrier film (4) irradiated with.
  • the band gap is 2 It can be seen that the gas barrier property is high as compared with the gas barrier film (5) in which the precursor layer is formed of a material of 5 eV (In 2 O 3 ).
  • the reason why such a phenomenon occurs is considered as follows. That is, in the vicinity of the interface between the photothermal conversion layer and the precursor layer, in addition to the modification effect due to heat, the material of the photothermal conversion layer is excited by light, and energy is converted into the material of the precursor layer existing in the vicinity. Although it is considered that the reforming of the precursor layer is further advanced, the same applies to the gas barrier film (9). However, the gas barrier film (8) has a crystal structure with a different valence or a different valence. Since it is a material made of a plurality of metals, it is possible to have an excited state of a plurality of crystal structures, and structural modification is likely to occur.

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  • Electroluminescent Light Sources (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　L'invention porte sur un procédé pour fabriquer un film de barrière contre les gaz, lequel procédé permet la fabrication d'un film de barrière contre les gaz ayant d'excellentes propriétés de barrière contre les gaz tout en empêchant l'apparition de limites de grain et de fissures. Le procédé pour fabriquer un film de barrière contre les gaz est caractérisé en ce qu'il comprend : une étape de stratification, dans laquelle au moins une couche de conversion photothermique (13), qui convertit de l'énergie optique en chaleur, et une couche de précurseur (120), qui est modifiée en une couche de barrière contre les gaz (12) par traitement thermique, sont stratifiées sur un substrat de film de résine (10) ; une étape d'irradiation de lumière, dans laquelle la couche de conversion photothermique (13) est irradiée par de la lumière après l'étape de stratification ; et une étape de modification, dans laquelle la couche de précurseur (120) est modifiée en la couche de barrière contre les gaz (12) à l'aide de la chaleur générée par la couche de conversion photothermique (13) du fait de l'étape d'irradiation de lumière.
PCT/JP2014/066933 2013-07-02 2014-06-26 Procédé pour fabriquer un film de barrière contre les gaz WO2015002056A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017156819A1 (fr) * 2016-03-18 2017-09-21 深圳市华星光电技术有限公司 Substrat de diode électroluminescente organique et son procédé de fabrication, et diode électroluminescente organique
CN109844847A (zh) * 2016-09-01 2019-06-04 大日本印刷株式会社 光学膜和图像显示装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6315497B2 (ja) * 2016-08-24 2018-04-25 株式会社大一商会 遊技機
TWI678282B (zh) * 2017-04-21 2019-12-01 國立研究開發法人產業技術綜合研究所 積層體及其製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0970917A (ja) * 1995-09-07 1997-03-18 Oike Ind Co Ltd 透明ガスバリア性積層体
JPH11151774A (ja) * 1997-11-19 1999-06-08 Dainippon Printing Co Ltd 透明ガスバリア−性フィルム
JP2002200710A (ja) * 2001-01-05 2002-07-16 Haruhiko Watanabe ガスバリヤ性プラスチック
JP2006299145A (ja) * 2005-04-22 2006-11-02 Konica Minolta Holdings Inc ガスバリア性フィルム、ガスバリア性フィルムを用いた有機エレクトロルミネッセンス用樹脂基材および有機エレクトロルミネッセンス素子
JP2006526072A (ja) * 2003-04-07 2006-11-16 富士写真フイルム株式会社 結晶性Ｓｉ層形成基板の製造方法、結晶性Ｓｉ層形成基板及び結晶性Ｓｉデバイス
JP2011241421A (ja) * 2010-05-17 2011-12-01 Toppan Printing Co Ltd ガスバリア性積層体の製造方法およびガスバリア性積層体
JP2012106421A (ja) * 2010-11-18 2012-06-07 Konica Minolta Holdings Inc ガスバリアフィルムの製造方法、ガスバリアフィルム及び電子機器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0970917A (ja) * 1995-09-07 1997-03-18 Oike Ind Co Ltd 透明ガスバリア性積層体
JPH11151774A (ja) * 1997-11-19 1999-06-08 Dainippon Printing Co Ltd 透明ガスバリア−性フィルム
JP2002200710A (ja) * 2001-01-05 2002-07-16 Haruhiko Watanabe ガスバリヤ性プラスチック
JP2006526072A (ja) * 2003-04-07 2006-11-16 富士写真フイルム株式会社 結晶性Ｓｉ層形成基板の製造方法、結晶性Ｓｉ層形成基板及び結晶性Ｓｉデバイス
JP2006299145A (ja) * 2005-04-22 2006-11-02 Konica Minolta Holdings Inc ガスバリア性フィルム、ガスバリア性フィルムを用いた有機エレクトロルミネッセンス用樹脂基材および有機エレクトロルミネッセンス素子
JP2011241421A (ja) * 2010-05-17 2011-12-01 Toppan Printing Co Ltd ガスバリア性積層体の製造方法およびガスバリア性積層体
JP2012106421A (ja) * 2010-11-18 2012-06-07 Konica Minolta Holdings Inc ガスバリアフィルムの製造方法、ガスバリアフィルム及び電子機器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017156819A1 (fr) * 2016-03-18 2017-09-21 深圳市华星光电技术有限公司 Substrat de diode électroluminescente organique et son procédé de fabrication, et diode électroluminescente organique
CN109844847A (zh) * 2016-09-01 2019-06-04 大日本印刷株式会社 光学膜和图像显示装置

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