WO2012036087A1 - Agent et procédé de polissage - Google Patents

Agent et procédé de polissage Download PDF

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Publication number
WO2012036087A1
WO2012036087A1 PCT/JP2011/070619 JP2011070619W WO2012036087A1 WO 2012036087 A1 WO2012036087 A1 WO 2012036087A1 JP 2011070619 W JP2011070619 W JP 2011070619W WO 2012036087 A1 WO2012036087 A1 WO 2012036087A1
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Prior art keywords
polishing
abrasive
polished
agent
particle size
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PCT/JP2011/070619
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English (en)
Japanese (ja)
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竹宮　聡
伊織 吉田
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旭硝子株式会社
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Priority to JP2012533979A priority Critical patent/JPWO2012036087A1/ja
Publication of WO2012036087A1 publication Critical patent/WO2012036087A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Definitions

  • the present invention relates to an abrasive and a polishing method for chemically and mechanically polishing a surface to be polished of an object to be polished. More specifically, the present invention relates to an abrasive for chemical mechanical polishing suitable for finish polishing of a silicon carbide substrate or the like, and a polishing method using the same.
  • CMP chemical mechanical polishing
  • the SiC substrate (SiC wafer) is manufactured as shown below. That is, the grown SiC single crystal ingot is cut into a wafer, the thickness is adjusted with a grinder, and then the surface is polished (preliminarily polished) with a polishing agent containing diamond abrasive grains to adjust the flatness of the surface. Further, the surface is finish-polished to produce a substrate (wafer) with high surface flatness.
  • finish polishing it is required to remove the work-affected layer generated on the substrate surface by preliminary polishing by chemical mechanical polishing and to highly planarize and smooth the substrate surface that appears after removal of the work-affected layer.
  • silicon oxide fine particles have been conventionally used for finish polishing for determining the quality of the SiC substrate.
  • both SiC and GaN have extremely high hardness and high chemical stability, it is difficult to polish at a high polishing efficiency (polishing rate) while ensuring flatness and smoothness, which is necessary for polishing. There was a problem that the time was very long.
  • Patent Document 1 discloses a polishing agent having a pH of 4 to 9 containing colloidal silica.
  • the polishing agent shown in (1) has a problem that the polishing time becomes long because the polishing rate of the SiC substrate is low.
  • Patent Document 2 discloses a polishing agent containing abrasive grains made of chromium oxide and an oxidizing agent.
  • this polishing agent contains: There has been a problem from the viewpoint of environmental contamination, such as the possibility that the surface of the SiC substrate after polishing may be contaminated by chromium oxide.
  • Patent Document 3 discloses a polishing agent containing colloidal silica, vanadate and an oxidizing agent. However, even when this polishing agent is used, the polishing rate of the SiC substrate is not sufficient, and a predetermined polishing amount is obtained. There is a problem that the time required for polishing is long in order to obtain the above.
  • an object of the present invention is to provide an abrasive and a polishing method excellent in surface flatness and smoothness after polishing.
  • the present invention provides an abrasive having the following constitution.
  • An abrasive for chemically and mechanically polishing a surface to be polished of an object to be polished having an average particle diameter (D 50 ) of 20 to 150 nm and a 90% particle diameter (D 90 ). It contains silicon oxide particles having a ratio (D 90 / D 10 ) of 10% particle diameter (D 10 ) of 1.6 to 10.0, an oxidizing agent, and water, and has a pH of 8.5 to 12.2. An abrasive that is zero.
  • the abrasive according to [1] further including an inorganic salt and a lubricant.
  • the lubricant is at least one amine having 6 to 20 carbon atoms and having at least one hydrocarbon group selected from an alkyl group, an aryl group, and an aryl-substituted alkyl group.
  • the present invention also provides a polishing method having the following configuration. [9]
  • the polishing agent according to any one of [1] to [8] is supplied to a polishing pad, and the surface to be polished and the polishing pad are brought into contact with each other, and polishing is performed by relative movement between the two. Polishing method.
  • the “surface to be polished” is a surface to be polished of an object to be polished, such as a surface.
  • the surface to be polished of a polishing object having a high hardness such as a silicon carbide (SiC) substrate can be polished at a high polishing rate, and is flat and smooth.
  • the surface after polishing without scratches can be obtained.
  • FIG. 1 is a diagram showing an example of a polishing apparatus that can be used in the polishing method of the present invention.
  • the abrasive according to the present invention is an abrasive for polishing a surface to be polished of an object to be polished, and has an average particle diameter (D 50 ) of 20 to 150 nm, 90% particle diameter (D 90 ) and 10 It contains silicon oxide particles having a ratio (D 90 / D 10 ) to% particle size (D 10 ) of 1.6 to 10.0, an oxidizing agent, and water.
  • the pH of the abrasive is in the range of 8.5 to 12.0.
  • the abrasive according to the present invention has a slurry shape.
  • the average particle size (D 50 ) is a volume-based cumulative 50% particle size.
  • the volume-based cumulative 50% particle size (D 50 ) is a particle size at which the cumulative value is 50% in a cumulative curve obtained by obtaining a particle size distribution on a volume basis and setting the total volume to 100%.
  • the average particle diameter (D 50 ) may be simply referred to as an average particle diameter or D 50 .
  • the 10% particle size (D 10 ) and the 90% particle size (D 90 ) are a volume-based cumulative 10% particle size and a volume-based cumulative 90% particle size, and the total volume of the obtained particle size distribution is 100.
  • the ratio (D 90 / D 10 ) between the 90% particle size (D 90 ) and the 10% particle size (D 10 ) can be considered as an index indicating the breadth of the particle size distribution.
  • D 90 / D 10 As the value of D 90 / D 10 is large, it has a broad particle size distribution. Moreover, as the D 90 / D 10 is closer to 1, having a particle size distribution close to monodispersion.
  • the particle size distribution is obtained from a frequency distribution and a cumulative volume distribution curve measured with a laser scattering particle size distribution measuring device.
  • the particle size is measured by dispersing the silicon oxide particles in an aqueous medium and measuring the particle size distribution using, for example, Nikkiso Microtrac UPA.
  • the abrasive of the present invention contains an abrasive which is a silicon oxide particle having a wide particle size distribution with D 50 of 20 to 150 nm and D 90 / D 10 of 1.6 to 10.0, and an oxidizing agent.
  • an abrasive which is a silicon oxide particle having a wide particle size distribution with D 50 of 20 to 150 nm and D 90 / D 10 of 1.6 to 10.0, and an oxidizing agent.
  • a polishing object having high hardness and high chemical stability such as a silicon carbide (SiC) substrate can be polished at a high polishing rate. It is possible to obtain a polished surface which is flat, smooth and free from scratches.
  • D 90 / D 10 of silicon oxide particles as abrasive grains is larger than that of conventionally used abrasive grains and has a wide particle size distribution, a high polishing rate can be obtained. That is, in the particles having a particle size distribution in which D 90 / D 10 is close to 1 and close to monodispersion, the polishing stress generated between the polishing object and the object to be polished is relatively small, whereas the particle size distribution is In the case of a wide particle, the polishing stress generated between the object to be polished increases due to the small particle diameter entering between the large particle diameter.
  • a large polishing stress acts on the object to be polished during polishing, so that the hard material and the difficult-to-polish material can be effectively polished. Can do.
  • the abrasive according to the present invention has a pH of 8.5 to 12.0, the oxidizing agent acts effectively, the polishing characteristics are good, and the dispersion of silicon oxide particles that are abrasive grains. Excellent stability.
  • Silicon oxide particles The silicon oxide (silica) particles in the abrasive of the present invention act as abrasive grains.
  • silica those produced by a known method can be used.
  • colloidal silica obtained by hydrolyzing silicon alkoxide such as ethyl silicate and methyl silicate by a sol-gel method can be used.
  • colloidal silica obtained by ion-exchange of sodium silicate and fumed silica obtained by vapor phase synthesis of silicon tetrachloride in an oxygen and hydrogen flame can be used.
  • colloidal silica is preferred because the particle size is easily controlled and a high-purity product can be obtained, and colloidal silica using sodium silicate as a starting material is particularly preferred.
  • the silicon oxide particles contained in the abrasive of the present invention are adjusted in particle size and particle size distribution so that the average particle size (D 50 ) is 20 to 150 nm and D 90 / D 10 is 1.6 to 10.0. It has been done. If D 50 of the silicon oxide particles is less than 20nm is not sufficient polishing rate (polishing efficiency) is obtained. Further, when D 50 of the silicon oxide particles exceeds 150 nm, the dispersion stability is deteriorated, it is difficult to obtain a uniform abrasive slurry. From the viewpoint of polishing characteristics and dispersion stability, the D 50 of the silicon oxide particles is more preferably 30 to 120 nm.
  • D 90 / D 10 that can be said to be an index of the size distribution of the silicon oxide particles is more preferably in the range of 1.7 to 9.0, and particularly preferably in the range of 1.8 to 8.0. Even if D 50 is 20 to 150 nm, a high polishing rate cannot be obtained when silicon oxide particles having D 90 / D 10 of less than 1.6 are used. Moreover, even when D 90 / D 10 of the silicon oxide particles exceeds 10.0, problems such as generation of scratches on the surface to be polished due to excessive expansion of the particle size distribution and reduced dispersibility of the abrasive occur. It is difficult to obtain a sufficiently high polishing rate.
  • the content ratio (concentration) of silicon oxide particles in the abrasive of the present invention is in the range of 1 to 40% by mass with respect to the total mass of the abrasive, and the polishing rate, uniformity of the polishing rate within the substrate surface, and dispersion It is preferable to set appropriately considering the stability and the like. A range of 10 to 30% by mass of the total mass of the abrasive is more preferable. If the content (concentration) of silicon oxide particles is less than 1% by mass with respect to the total mass of the abrasive, a sufficient polishing rate may not be obtained. If it exceeds 40% by mass, the concentration of silicon oxide particles will increase. A commensurate improvement in the polishing rate is not observed, and the viscosity of the abrasive may be increased or gelation may be promoted.
  • the oxidizing agent in the abrasive of the present invention forms an oxide layer (film) on the surface to be polished of an object to be described later (for example, a single crystal substrate such as SiC or GaN).
  • an oxide layer By removing this oxide layer from the surface to be polished by mechanical force, polishing of the object to be polished is promoted. That is, compound semiconductors such as SiC and GaN are non-oxides and are difficult to polish, but an oxide layer can be formed on the surface by an oxidizing agent in the polishing agent. Since the formed oxide layer has a lower hardness than the object to be polished, which is a difficult-to-polish material, and is easily polished, it can be effectively removed by silicon oxide particles that are abrasive grains. As a result, a high polishing rate appears.
  • oxidizing agent 1 selected from hydrogen peroxide, iodate, periodate, hypochlorite, perchlorate, persulfate, percarbonate, perborate and perphosphate
  • iodate, periodate, hypochlorite, perchlorate, persulfate, percarbonate, perborate and perphosphate ammonium salt, potassium salt, etc. are used. be able to.
  • ammonium persulfate and potassium persulfate are preferred.
  • hydrogen peroxide is preferred because it does not contain an alkali metal component and does not produce harmful by-products.
  • the content (concentration) of the oxidizing agent in the polishing agent of the present invention is in the range of 0.1 to 20% by mass with respect to the total mass of the polishing agent. It is preferable to set appropriately considering the above. A range of 0.5 to 15% by mass with respect to the total mass of the abrasive is more preferable, and a range of 1.0 to 12% by mass is particularly preferable.
  • the pH of the abrasive according to the present invention is in the range of 8.5 to 12.0 from the viewpoint of polishing characteristics and dispersion stability. When the pH is less than 8.5, a sufficient polishing rate cannot be obtained. If the pH exceeds 12.0, silicon oxide particles that are abrasive grains dissolve, and a sufficient polishing rate cannot be obtained. A more preferable pH range is 9.0 to 11.0.
  • the pH of the abrasive of the present invention is adjusted by adding and blending an acid and a basic compound described later.
  • the abrasive of the present invention preferably contains an inorganic salt produced by a reaction between the compounded acid and a basic compound. That is, the polishing agent of the present invention preferably contains an acid in addition to the silicon oxide particles and the oxidizing agent, and the pH of the polishing agent is adjusted to the predetermined range (8.5 to 12.0). Therefore, it is preferable to add a basic compound. Therefore, the abrasive contains an inorganic salt produced by the reaction between the compounded acid and the basic compound. In addition, when an above-mentioned oxidizing agent functions also as an acid, it shall treat as an acid instead of an oxidizing agent.
  • the acid it is preferable to use one or more inorganic acids selected from nitric acid, sulfuric acid, phosphoric acid and hydrochloric acid.
  • nitric acid, sulfuric acid and phosphoric acid is preferred, and use of nitric acid which is an oxidizing oxo acid and does not contain halogen is particularly preferred.
  • the acid content (concentration) in the abrasive of the present invention is preferably in the range of 0.01 to 5.0% by mass, more preferably in the range of 0.1 to 1.0% by mass with respect to the total mass of the abrasive. preferable.
  • the concentration of this acid means the concentration when it is assumed that the salt exists independently as an acid and a basic compound when it becomes an inorganic salt by reaction with a basic compound described later.
  • a basic compound is added together with the acid.
  • the basic compound quaternary ammonium such as ammonia, potassium hydroxide, sodium hydroxide and tetramethylammonium can be used, and use of potassium hydroxide and sodium hydroxide is preferable.
  • the content (concentration) of the basic compound in the abrasive is an amount that adjusts the pH of the abrasive to a predetermined range (pH 8.5 to 12.0).
  • the inorganic salt generated by the reaction between the acid and the basic compound is contained in the abrasive.
  • Nitric acid, sulfuric acid and phosphoric acid are preferably used as the acid
  • potassium hydroxide and sodium hydroxide are preferably used as the basic compound. Therefore, the inorganic salts contained in the abrasive are potassium nitrate, sodium nitrate and potassium sulfate.
  • One or more salts selected from sodium sulfate, potassium phosphate and sodium phosphate are preferred.
  • the polishing rate is improved by the efficient contact of the abrasive grains with the object to be polished by the compression effect of the electric double layer.
  • an acid and a basic compound in any step of preparation of the abrasive
  • the polishing rate can be increased, the pH of the polishing agent can be easily adjusted to a desired range, and In the present invention, it is preferable to add the acid and the basic compound separately from the viewpoint of handleability.
  • the abrasive of the present invention preferably contains a lubricant, and the polishing stress generated between the polishing object and the object to be polished is appropriately adjusted to enable stable polishing. That is, when the polishing stress generated between the polishing object and the object to be polished is relatively large, the object to be polished may be released from the holding by the polishing head or the like, or may be ejected from the polishing apparatus or may be damaged. By applying a lubricant to the surface to be polished of the object to be polished, stable and effective polishing can be performed without damaging the object to be polished.
  • Such a lubricant is selected from an alkyl group having 6 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, and an aryl-substituted alkyl group having 6 to 20 carbon atoms in which the H atom of the alkyl group is substituted with an aryl group.
  • an amine having a hydrocarbon group specifically examples include octylamine, dodecylamine, and polyoxyethylene laurylamine, and it is preferable to use one or more selected from these amines.
  • Such an amine does not deteriorate the dispersibility of the abrasive slurry.
  • the amine includes not only a primary amine having a primary amino group but also a secondary amine having a secondary amino group and a tertiary amine having a tertiary amino group.
  • the content (concentration) of the lubricant in the abrasive is preferably in the range of 0.001 to 5% by mass with respect to the total mass of the abrasive.
  • a range of 0.002 to 0.5% by mass with respect to the total mass of the abrasive is more preferable, and a range of 0.003 to 0.1% by mass is particularly preferable.
  • the water contained in the abrasive of the present invention is a medium for stably dispersing silicon oxide particles that are abrasive grains and dispersing and dissolving the oxidant and optional components added as necessary. It is. Although there is no restriction
  • the viscosity of the abrasive may become high and fluidity may be impaired. If it exceeds 90% by mass, the silicon oxide particles that are abrasive grains The concentration may be low and a sufficient polishing rate may not be obtained.
  • the abrasive according to the present invention includes a surfactant, a chelating agent, a reducing agent, a viscosity-imparting agent or a viscosity modifier, and an anti-aggregation agent unless it is contrary to the spirit of the present invention. Or a dispersing agent, a rust preventive agent, etc. can be suitably contained as needed. However, when these additives have the functions of an oxidizing agent, a lubricant, an acid or a basic compound, they are handled as an oxidizing agent, a lubricant, an acid or a basic compound.
  • the above-described components are contained in the predetermined content ratio (concentration), the silicon oxide particles are uniformly dispersed, and the other components are uniformly dissolved. Prepared and used.
  • a stirring and mixing method usually used in the production of abrasives for example, a stirring and mixing method using an ultrasonic disperser, a homogenizer, or the like can be employed.
  • the abrasive according to the present invention does not necessarily have to be supplied to the polishing site as a mixture of all the pre-configured abrasive materials. When supplying to the place of polishing, the polishing material may be mixed to form the composition of the abrasive.
  • polishing object to be polished by the abrasive of the present invention is not particularly limited. Specifically, a glass substrate, a silicon wafer, a semiconductor device wiring substrate, a compound semiconductor single crystal substrate, and the like can be given. Among these, it is possible to increase a large effect when polishing a compound semiconductor single crystal substrate. In particular, by using it for polishing a single crystal substrate having a modified Mohs hardness of 10 or more, an effect of further high-speed polishing is achieved. Can be obtained.
  • the single crystal substrate having the modified Mohs hardness of 10 or more include sapphire ( ⁇ -Al 2 O 3 ) substrate (hardness: 12), silicon carbide (SiC) substrate (hardness: 13), gallium nitride. (GaN) substrate (hardness: 13) and the like.
  • the abrasive of the present invention is particularly preferably used for polishing a silicon carbide (SiC) substrate.
  • polishing method As a method of polishing the surface to be polished of the object to be polished using the polishing agent of the present invention, the surface to be polished and the polishing pad of the object to be polished are brought into contact with each other while supplying the abrasive to the polishing pad.
  • a polishing method in which polishing is performed by the relative motion is preferable.
  • FIG. 1 shows an example of a polishing apparatus that can be used in an embodiment of the present invention, which will be described below.
  • the polishing apparatus used in the embodiment of the present invention is not limited to such a structure. Absent.
  • the polishing apparatus 10 includes a polishing head 2 that holds an object 1 to be polished, a polishing surface plate 3, a polishing pad 4 that is attached to the surface of the polishing surface plate 3, a tank 8 that stores an abrasive 5, A polishing agent supply pipe 7 for supplying the polishing agent 5 from the tank 8 to the polishing pad 4 using the polishing agent supply pump 7 is provided.
  • the polishing apparatus 10 brings the polishing surface of the object 1 held by the polishing head 2 into contact with the polishing pad 4 while supplying the polishing agent 5 from the polishing agent supply pipe 6, and the polishing head 2 and the polishing surface plate 3. Is configured to perform polishing by relatively rotating them.
  • the surface to be polished of the object 1 can be polished.
  • the polishing apparatus 10 shown in FIG. 1 is a single-side polishing apparatus that polishes one surface of the polishing object 1 as a surface to be polished.
  • the polishing apparatus 10 is similar to the polishing apparatus 10 in FIG. It is also possible to simultaneously polish the surface to be polished (both sides) of the object to be polished using a double-sided simultaneous polishing apparatus provided with a polishing pad.
  • the polishing head 2 may move linearly as well as rotationally. Further, the polishing surface plate 3 and the polishing pad 4 may be as large as or smaller than the polishing object 1. In that case, it is preferable that the entire surface of the object to be polished 1 can be polished by relatively moving the polishing head 2 and the polishing surface plate 3. Furthermore, the polishing surface plate 3 and the polishing pad 4 do not have to perform rotational movement, and may move in one direction, for example, by a belt type.
  • the polishing conditions of the polishing apparatus 10 are not particularly limited, but by applying a load to the polishing head 2 and pressing it against the polishing pad 4, it is possible to increase the polishing pressure and increase the polishing rate.
  • the polishing pressure is preferably about 10 to 50 kPa, and more preferably about 10 to 40 kPa from the viewpoint of polishing surface uniformity of the polishing rate, flatness, and prevention of polishing defects such as scratches.
  • the number of rotations of the polishing surface plate 3 and the polishing head 2 is preferably about 50 to 500 rpm, but is not limited thereto.
  • the supply amount of the abrasive 5 is appropriately adjusted and selected depending on the constituent material of the surface to be polished, the composition of the abrasive, the above polishing conditions, and the like.
  • the polishing pad 4 may be made of a general nonwoven fabric, foamed polyurethane, porous resin, non-porous resin, or the like. Further, in order to promote the supply of the polishing agent 5 to the polishing pad 4 or to collect a certain amount of the polishing agent 5 on the polishing pad 4, the surface of the polishing pad 4 has a lattice shape, a concentric circle shape, a spiral shape, or the like. Groove processing may be performed.
  • the pad conditioner may be brought into contact with the surface of the polishing pad 4 to perform polishing while conditioning the surface of the polishing pad 4.
  • the abrasive of the present invention is supplied to a polishing pad for use.
  • the abrasive used for polishing is discarded as it is, but it can also be recycled. That is, it is also possible to collect the polishing agent supplied to the polishing pad and used for polishing, and supply it again to the polishing pad for use.
  • the polishing method according to the present invention using such a polishing apparatus can be suitably used for finish polishing of an SiC substrate or the like after preliminary polishing with an abrasive containing diamond abrasive grains.
  • abrasive (1-1) Each of the abrasives of Examples 1 to 16 was prepared as follows. First, the acid and lubricant shown in Table 1 were added to water and stirred for 10 minutes. In Table 1, the lubricant F1 represents polyoxyethylene laurylamine, F2 represents dodecylamine, and F3 represents octylamine. Next, a liquid in which colloidal silica particles having the particle diameters D 10 , D 50 , and D 90 shown in Table 1 and D 90 / D 10 shown in Table 1 were dispersed in water was gradually added. The pH was adjusted by gradually adding KOH or NaOH, which is a basic compound shown in FIG.
  • Table 1 shows the content ratio (concentration: mass%) of each component used in each example with respect to the entire abrasive. Pure water was used as water.
  • Comparative Example 1 Each abrasive of Comparative Examples 1 to 8 was prepared as shown below.
  • Comparative Example 1 Comparative Example 4 and Comparative Example 6, colloidal silica particles having each particle size (D 10 , D 50 , D 90 ) and particle size distribution (D 90 / D 10 ) shown in Table 1 are dispersed in water. Only the liquid which was made to mix was mix
  • the particle diameters (D 10 , D 50 , D 90 ) of the silica particles blended in Examples 1 to 16 and Comparative Examples 1 to 8 were measured with Microtrac UPA (Nikkiso Co., Ltd.). Then, a D 90 / D 10 from the value of D 10 and D 90, was used as an indicator of the breadth of the particle size distribution.
  • polishing machine As a polishing machine, a tabletop polishing apparatus manufactured by Nanofactor was used. As a polishing pad, SUBA800-XY-groove (manufactured by Nitta Haas) was used, and conditioning was performed using MEC100-PH3.5L (manufactured by Mitsubishi Materials) and a brush before polishing.
  • SUBA800-XY-groove manufactured by Nitta Haas
  • MEC100-PH3.5L manufactured by Mitsubishi Materials
  • Polishing was performed for 60 minutes at a polishing agent supply speed of 25 cm 3 / min, a polishing platen rotation speed of 90 rpm, a substrate holder rotation speed of 80 rpm, and a polishing pressure of 5 psi (34.5 kPa).
  • (3-2) Object to be polished A 2-inch diameter SiC wafer was used as the object to be polished. The Si surface side was polished and evaluated with an off angle of 8 degrees. A wafer having a thickness of 380 ⁇ m after preliminary polishing using diamond abrasive grains was used.
  • polishing rate was evaluated by the amount of change (nm / hr) in the thickness of the substrate (wafer) per unit time. Specifically, the mass of an unpolished substrate with a known thickness and the substrate mass after polishing each time were measured, and the mass change was determined from the difference. And the change per time of the thickness of the board
  • the polishing rate of the silicon carbide (SiC) substrate is higher than when the abrasives of Comparative Examples 1 to 8 are used. Polishing is possible. Further, the surface to be polished of the object to be polished is not damaged due to polishing, and a polished surface having excellent flatness and smoothness can be obtained.
  • the polishing rate of the silicon carbide (SiC) substrate is low, and a sufficient polishing rate is not obtained.
  • the abrasive of Comparative Example 1 is an abrasive that contains only silica particles as abrasive grains and does not contain an oxidizing agent, and is Compol 80 (trade name, manufactured by Fujimi Incorporated). Since the abrasive of Comparative Example 1 contains silica particles having a D 90 / D 10 of less than 1.6 and a narrow particle size distribution and does not contain an oxidizing agent, a high polishing rate cannot be obtained.
  • a polishing agent of Comparative Example 3 and Comparative Example 8 are both contain an oxidizing agent, and the pH is within a predetermined range (pH8.5 ⁇ 12.0), D 90 as abrasive grains Since / D 10 is less than 1.6 and contains silica particles having a narrow particle size distribution, the polishing rate is low.
  • the abrasive of Comparative Example 4 contains silica particles having a D 90 / D 10 of 1.6 or more and a wide particle size distribution as abrasive grains and has a pH in the range of 8.5 to 12.0. Since it does not contain, polishing rate is low.
  • the abrasive of Comparative Example 5 contains silica particles having a D 90 / D 10 of 1.6 or more and a wide particle size distribution and an oxidizing agent, but the pH is 3.0 and is out of the predetermined range. Therefore, the polishing rate is low.
  • the abrasive of Comparative Example 7 contains silica particles having a D 90 / D 10 of 1.6 or more and a wide particle size distribution as abrasive grains, but the pH is outside the range of 8.5 to 12.0.
  • the polishing rate is low.
  • a single crystal substrate of a compound semiconductor having a high hardness such as a silicon carbide (SiC) substrate or a gallium nitride (GaN) substrate can be polished at high speed, and is flat and smooth without scratches. It is possible to obtain a polished surface having excellent properties. Therefore, it can contribute to the improvement of productivity of those substrates.
  • SiC silicon carbide
  • GaN gallium nitride

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Abstract

La présente invention concerne un agent de polissage (5) pour le polissage mécanochimique d'une surface à polir sur un objet (1) à polir. L'agent de polissage a un pH de 8,5-12,0 et contient des particules d'oxyde de silicium ayant un diamètre moyen de particules (D50) de 20-150 nm et un rapport du diamètre de 90 % des particules (D90) au diamètre de 10 % des particules (D10) (D90/D10) de 1,6-10,0, un oxydant, et de l'eau.
PCT/JP2011/070619 2010-09-15 2011-09-09 Agent et procédé de polissage WO2012036087A1 (fr)

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JP2012533979A JPWO2012036087A1 (ja) 2010-09-15 2011-09-09 研磨剤および研磨方法

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JP2010-206500 2010-09-15
JP2010206500 2010-09-15

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WO2014163061A1 (fr) * 2013-03-30 2014-10-09 Hoya株式会社 Procédé de fabrication de substrat de verre de disque magnétique, substrat de verre de disque magnétique, et procédé de fabrication de disque magnétique
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EP4163057A1 (fr) * 2014-11-07 2023-04-12 Fujimi Incorporated Procédé de polissage et composition de polissage
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WO2016132676A1 (fr) * 2015-02-19 2016-08-25 株式会社フジミインコーポレーテッド Composition de polissage de tranches de silicium et procédé de polissage
JP2018145261A (ja) * 2017-03-02 2018-09-20 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨用組成物の製造方法
WO2020246471A1 (fr) * 2019-06-04 2020-12-10 昭和電工マテリアルズ株式会社 Solution de polissage, dispersion, procédé de production de solution de polissage et procédé de polissage
WO2020245904A1 (fr) * 2019-06-04 2020-12-10 昭和電工マテリアルズ株式会社 Solution de polissage, dispersion, procédé de production de solution de polissage et procédé de polissage
JPWO2020246471A1 (ja) * 2019-06-04 2021-12-09 昭和電工マテリアルズ株式会社 研磨液、分散体、研磨液の製造方法及び研磨方法
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WO2023282475A1 (fr) * 2021-07-08 2023-01-12 영창케미칼 주식회사 Composition de bouillie pour le polissage final d'une tranche de silicium pour la réduction du nombre de défauts de surface et du trouble et procédé de polissage final utilisant cette composition

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