JP2010540759A - 改善された炭化ケイ素粒子、ならびにその製造方法および使用方法 - Google Patents
改善された炭化ケイ素粒子、ならびにその製造方法および使用方法 Download PDFInfo
- Publication number
- JP2010540759A JP2010540759A JP2010528160A JP2010528160A JP2010540759A JP 2010540759 A JP2010540759 A JP 2010540759A JP 2010528160 A JP2010528160 A JP 2010528160A JP 2010528160 A JP2010528160 A JP 2010528160A JP 2010540759 A JP2010540759 A JP 2010540759A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- particles
- silica
- carbide particles
- slurry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/628—Coating the powders or the macroscopic reinforcing agents
- C04B35/62802—Powder coating materials
- C04B35/62805—Oxide ceramics
- C04B35/62807—Silica or silicates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/628—Coating the powders or the macroscopic reinforcing agents
- C04B35/62889—Coating the powders or the macroscopic reinforcing agents with a discontinuous coating layer
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/628—Coating the powders or the macroscopic reinforcing agents
- C04B35/62892—Coating the powders or the macroscopic reinforcing agents with a coating layer consisting of particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3873—Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
- C04B2235/3878—Alpha silicon nitrides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3873—Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
- C04B2235/3882—Beta silicon nitrides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5454—Particle size related information expressed by the size of the particles or aggregates thereof nanometer sized, i.e. below 100 nm
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
- Y10T428/2991—Coated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
- Y10T428/2991—Coated
- Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- Nanotechnology (AREA)
- Composite Materials (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
SiO2+3C=SiC+2CO
として示される。反応において一酸化炭素が流出できる多孔性を混合物に付与するために混合物はおがくずを更に含むことが可能である。混合物を精製するのを助けるために塩を添加することが可能である。反応は、例えば電気炉内で行うことが可能である。アチソン法に似た既知の他の方法も炭化ケイ素を生成するために用いることが可能である。
SiC(s)+2O2(g)→SiO2(s)+CO2(g)
である一方で、より低い圧力で、反応は、
SiC(s)+3/2O2(g)→SiO2(s)+CO(g)
である。そして非常に低い圧力で、SiO(g)も次の通り形成してよい。
SiC(s)+O2(g)→SiO(s)+CO(g)
Claims (39)
- 炭化ケイ素を含むナノサイズ粒子。
- 前記炭化ケイ素粒子がシリカに似た化学的表面特性を有する請求項1に記載の粒子。
- 前記炭化ケイ素粒子がそれらの表面の少なくとも一部をシリカで被覆された粒子を含み、前記炭化ケイ素粒子がシリカに似た化学的表面特性を有する請求項2に記載の粒子。
- 前記炭化ケイ素研磨粒子がそれらの表面の少なくとも50%を覆うシリカを有する粒子を含む請求項1に記載の粒子。
- 前記シリカが前記粒子の表面の少なくとも80%を覆う請求項4に記載の粒子。
- 前記炭化ケイ素粒子がシリカによって実質的に封入される請求項4に記載の粒子。
- 前記炭化ケイ素粒子が400nm以下の平均粒度を有する請求項1に記載の粒子。
- 前記炭化ケイ素粒子が300nm以下の平均粒度を有する請求項1に記載の粒子。
- 前記炭化ケイ素粒子が200nm以下の平均粒度を有する請求項1に記載の粒子。
- 前記炭化ケイ素粒子が100nm以下の平均粒度を有する請求項1に記載の粒子。
- 前記シリカ被膜が前記炭化ケイ素粒子の酸化によって形成される請求項3に記載の粒子。
- 前記酸化が、酸化前の炭化ケイ素粒子の粒度と実質的に同じ粒度を有する、シリカ被膜を含む炭化ケイ素の粒子をもたらす請求項11に記載の粒子。
- 前記炭化ケイ素がナノサイズα−炭化ケイ素である請求項1に記載の粒子。
- 前記炭化ケイ素がβ−炭化ケイ素である請求項1に記載の粒子。
- 前記粒子が研磨粒子である請求項1に記載の粒子。
- 請求項15に記載の炭化ケイ素粒子の分散液を含む研磨スラリー組成物。
- 前記炭化ケイ素が少なくとも約0.01重量%の濃度で水性媒体中に存在する請求項16に記載の研磨スラリー組成物。
- 前記炭化ケイ素が少なくとも約0.1重量%の濃度で水性媒体中に存在する請求項16に記載の研磨スラリー組成物。
- 前記炭化ケイ素が少なくとも約1重量%の濃度で水性媒体中に存在する請求項16に記載の研磨スラリー組成物。
- 前記炭化ケイ素が約5%〜約50%の範囲の濃度で水性媒体中に存在する請求項16に記載の研磨スラリー組成物。
- 研磨粒子を製造する方法であって、炭化ケイ素を含むナノサイズ研磨粒子を調製することを含む方法。
- 前記炭化ケイ素粒子がシリカに似た化学的表面特性を有するように前記炭化ケイ素粒子を調製する請求項21に記載の方法。
- 前記化学的表面特性が前記炭化ケイ素を酸化させることにより提供される請求項22に記載の方法。
- 酸化された前記炭化ケイ素粒子の粒度が、酸化前の前記炭化ケイ素粒子の粒度と実質的に同じである請求項23に記載の方法。
- 前記炭化ケイ素粒子がα−炭化ケイ素粒子を含む請求項21に記載の方法。
- 前記炭化ケイ素粒子がβ−炭化ケイ素粒子を含む請求項21に記載の方法。
- 前記炭化粒子がシリカによって実質的に封入される請求項21に記載の方法。
- 前記炭化ケイ素粒子が、少なくとも2000℃の温度でシリカと炭素との混合物を反応させることにより調製される請求項21に記載の方法。
- 化学的機械的平面化(CMP)の方法であって、請求項1に記載の炭化ケイ素粒子の分散液を含む研磨スラリー組成物で基材を研磨することを含む方法。
- 前記基材が金属層を含み、前記金属層が研磨される請求項29に記載の方法。
- 前記金属層が貴金属である請求項30に記載の方法。
- 前記基材が絶縁体層を含み、前記絶縁体が研磨される請求項29に記載の方法。
- 前記絶縁体層がシリケート基を含有する請求項32に記載の方法。
- 類似の条件下でシリカスラリーにより提供される除去速度および表面仕上と比べて基材の除去速度および表面仕上を向上させる方法であって、
シリカ研磨粒子を含むスラリーを提供する工程と、
炭化ケイ素を含むナノサイズ研磨粒子を前記スラリーに添加する工程と
を含む方法。 - 前記ナノサイズ炭化ケイ素粒子がシリカに似た化学的表面特性を有する請求項34に記載の方法。
- 基材の除去速度および表面仕上を向上させる方法であって、炭化ケイ素粒子を含むナノサイズ研磨粒子をより柔らかい研磨粒子を含むスラリーに添加する工程を含み、前記炭化ケイ素粒子のないより柔らかい研磨粒子を含む前記スラリーと比べて除去速度および表面仕上を向上させる方法。
- 前記ナノサイズ炭化ケイ素粒子がシリカに似た化学的表面特性を有する請求項36に記載の方法。
- スラリーの化学反応および硬度を向上させる方法であって、炭化ケイ素粒子を含むナノサイズ研磨粒子をより柔らかい研磨粒子を含む前記スラリーに添加する工程を含み、前記炭化ケイ素粒子のないより柔らかい研磨粒子を含む前記スラリーと比べて化学反応および硬度を向上させる方法。
- 前記ナノサイズ炭化ケイ素粒子がシリカに似た化学的表面特性を有する請求項38に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US99793507P | 2007-10-05 | 2007-10-05 | |
US60/997,935 | 2007-10-05 | ||
PCT/US2008/078741 WO2009046293A1 (en) | 2007-10-05 | 2008-10-03 | Improved silicon carbide particles, methods of fabrication, and methods using same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010540759A true JP2010540759A (ja) | 2010-12-24 |
JP5346940B2 JP5346940B2 (ja) | 2013-11-20 |
Family
ID=40106432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010528160A Active JP5346940B2 (ja) | 2007-10-05 | 2008-10-03 | 改善された炭化ケイ素粒子、ならびにその製造方法および使用方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8815396B2 (ja) |
EP (1) | EP2215176B1 (ja) |
JP (1) | JP5346940B2 (ja) |
KR (2) | KR101323577B1 (ja) |
CN (1) | CN101815771A (ja) |
AU (1) | AU2008308580B2 (ja) |
CA (1) | CA2700408A1 (ja) |
WO (1) | WO2009046293A1 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012118054A1 (ja) * | 2011-03-01 | 2012-09-07 | 日本パーカライジング株式会社 | 表面処理皮膜付き硬質粒子の製造方法及び表面処理皮膜付き硬質粒子 |
WO2013077370A1 (ja) * | 2011-11-25 | 2013-05-30 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
WO2013077371A1 (ja) * | 2011-11-25 | 2013-05-30 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
US8721917B2 (en) | 2007-10-05 | 2014-05-13 | Saint-Gobain Ceramics & Plastics, Inc. | Polishing of sapphire with composite slurries |
JP2014210322A (ja) * | 2013-04-19 | 2014-11-13 | 株式会社フジミインコーポレーテッド | 磁気ディスク基板用研磨組成物キット |
JP2016502757A (ja) * | 2012-11-06 | 2016-01-28 | シンマット, インコーポレーテッドSinmat, Inc. | 平滑なダイヤモンド表面、及びその形成のためのcmp方法 |
JP2019135297A (ja) * | 2013-05-15 | 2019-08-15 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | N−ビニル−ホモポリマーおよびn−ビニルコポリマーからなる群から選択される1種または複数のポリマーを含む化学機械研磨組成物 |
WO2021181776A1 (ja) * | 2020-03-11 | 2021-09-16 | 株式会社フジミインコーポレーテッド | 炭化ケイ素粉末及びその製造方法 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2215176B1 (en) | 2007-10-05 | 2016-01-06 | Saint-Gobain Ceramics & Plastics, Inc. | Improved silicon carbide particles, methods of fabrication, and methods using same |
JP5819076B2 (ja) * | 2010-03-10 | 2015-11-18 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US10954167B1 (en) | 2010-10-08 | 2021-03-23 | Advanced Ceramic Fibers, Llc | Methods for producing metal carbide materials |
US9803296B2 (en) | 2014-02-18 | 2017-10-31 | Advanced Ceramic Fibers, Llc | Metal carbide fibers and methods for their manufacture |
US8595929B2 (en) * | 2010-10-21 | 2013-12-03 | Siemens Energy, Inc. | Repair of a turbine engine surface containing crevices |
US8828874B2 (en) | 2011-03-28 | 2014-09-09 | Sinmat, Inc. | Chemical mechanical polishing of group III-nitride surfaces |
US8980122B2 (en) | 2011-07-08 | 2015-03-17 | General Engineering & Research, L.L.C. | Contact release capsule useful for chemical mechanical planarization slurry |
KR20130090209A (ko) * | 2012-02-03 | 2013-08-13 | 삼성전자주식회사 | 기판처리장치 및 기판처리방법 |
RU2015153455A (ru) * | 2013-05-15 | 2017-06-20 | Басф Се | Композиции для химико-механической полировки, содержащие полиэтиленимин |
US20160045881A1 (en) * | 2014-08-15 | 2016-02-18 | Rec Silicon Inc | High-purity silicon to form silicon carbide for use in a fluidized bed reactor |
CN104327741B (zh) * | 2014-09-28 | 2016-06-15 | 顾泉 | 用于研磨蓝宝石基板的研磨组合物及其应用 |
US9916985B2 (en) * | 2015-10-14 | 2018-03-13 | International Business Machines Corporation | Indium phosphide smoothing and chemical mechanical planarization processes |
CN105733309A (zh) * | 2015-12-31 | 2016-07-06 | 哈尔滨工业大学 | 一种表面改性的SiC纳米线及其制备方法与应用 |
MY200022A (en) * | 2017-04-14 | 2023-12-05 | Cmc Mat Llc | Chemical-mechanical processing slurry and methods |
US10793478B2 (en) | 2017-09-11 | 2020-10-06 | Advanced Ceramic Fibers, Llc. | Single phase fiber reinforced ceramic matrix composites |
CN109749630B (zh) * | 2017-11-06 | 2021-05-25 | 蓝思科技(长沙)有限公司 | 一种微米级碳化硼粗磨液、其制备方法及其应用 |
US11685849B2 (en) | 2019-10-11 | 2023-06-27 | Saint-Gobain Abrasives, Inc. | Abrasive particle including coating, abrasive article including the abrasive particles, and method of forming |
WO2022077030A1 (en) * | 2020-10-09 | 2022-04-14 | Saint-Gobain Abrasives, Inc. | Abrasive particles including coating, abrasive article including the abrasive particles, and method of forming |
CN115304393B (zh) * | 2022-08-08 | 2023-07-07 | 中电化合物半导体有限公司 | 一种多孔抛光垫的制备方法及应用 |
CN117923907A (zh) * | 2024-03-25 | 2024-04-26 | 山东华信工业科技有限公司 | 一种碳化硅陶瓷的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000160139A (ja) * | 1998-12-01 | 2000-06-13 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
JP2003321276A (ja) * | 2002-04-30 | 2003-11-11 | Nippon Steel Corp | 乾燥性に優れた不定形耐火物用炭化けい素原料及び不定形耐火物原料 |
WO2007041199A2 (en) * | 2005-09-30 | 2007-04-12 | Saint-Gobain Ceramics & Plastics, Inc. | Polishing slurries and methods for utilizing same |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB526130A (en) | 1939-03-08 | 1940-09-11 | Carborundum Co | Improvements in or relating to silicon carbide abrasive articles |
US3789096A (en) | 1967-06-01 | 1974-01-29 | Kaman Sciences Corp | Method of impregnating porous refractory bodies with inorganic chromium compound |
US4249913A (en) * | 1979-05-21 | 1981-02-10 | United Technologies Corporation | Alumina coated silicon carbide abrasive |
US4429003A (en) | 1981-10-05 | 1984-01-31 | Norton Co. | Protective coating for porous refractories |
CH675250A5 (ja) * | 1988-06-17 | 1990-09-14 | Lonza Ag | |
YU32490A (en) | 1989-03-13 | 1991-10-31 | Lonza Ag | Hydrophobic layered grinding particles |
US4959113C1 (en) * | 1989-07-31 | 2001-03-13 | Rodel Inc | Method and composition for polishing metal surfaces |
US4997461A (en) | 1989-09-11 | 1991-03-05 | Norton Company | Nitrified bonded sol gel sintered aluminous abrasive bodies |
US20020111024A1 (en) | 1996-07-25 | 2002-08-15 | Small Robert J. | Chemical mechanical polishing compositions |
US6832735B2 (en) * | 2002-01-03 | 2004-12-21 | Nanoproducts Corporation | Post-processed nanoscale powders and method for such post-processing |
US6062952A (en) * | 1997-06-05 | 2000-05-16 | Robinson; Karl M. | Planarization process with abrasive polishing slurry that is selective to a planarized surface |
US6726990B1 (en) * | 1998-05-27 | 2004-04-27 | Nanogram Corporation | Silicon oxide particles |
US6290735B1 (en) * | 1997-10-31 | 2001-09-18 | Nanogram Corporation | Abrasive particles for surface polishing |
CN1222495A (zh) * | 1997-11-14 | 1999-07-14 | 中国科学院固体物理研究所 | 表面包敷与未包敷二氧化硅的碳化硅纳米棒及制备方法 |
US6143662A (en) | 1998-02-18 | 2000-11-07 | Rodel Holdings, Inc. | Chemical mechanical polishing composition and method of polishing a substrate |
JP4092011B2 (ja) | 1998-04-10 | 2008-05-28 | 花王株式会社 | 研磨液組成物 |
JP2001072479A (ja) | 1999-09-01 | 2001-03-21 | Asahi Glass Co Ltd | 炭化ケイ素質多孔体およびその製造方法 |
WO2001032799A1 (en) * | 1999-11-04 | 2001-05-10 | Nanogram Corporation | Particle dispersions |
US6527817B1 (en) * | 1999-11-15 | 2003-03-04 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
EP1252248A1 (en) | 1999-12-14 | 2002-10-30 | Rodel Holdings, Inc. | Polishing compositions for noble metals |
JP4003116B2 (ja) | 2001-11-28 | 2007-11-07 | 株式会社フジミインコーポレーテッド | 磁気ディスク用基板の研磨用組成物及びそれを用いた研磨方法 |
US20030168627A1 (en) | 2002-02-22 | 2003-09-11 | Singh Rajiv K. | Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers |
US6866793B2 (en) * | 2002-09-26 | 2005-03-15 | University Of Florida Research Foundation, Inc. | High selectivity and high planarity dielectric polishing |
WO2004053456A2 (en) | 2002-12-09 | 2004-06-24 | Corning Incorporated | Method using multi-component colloidal abrasives for cmp processing of semiconductor and optical materials |
JP2004189576A (ja) | 2002-12-13 | 2004-07-08 | National Institute Of Advanced Industrial & Technology | セラミックス被覆された炭化ケイ素系多孔質構造材及びその製造方法 |
US6896591B2 (en) | 2003-02-11 | 2005-05-24 | Cabot Microelectronics Corporation | Mixed-abrasive polishing composition and method for using the same |
EP1603851A1 (en) | 2003-03-26 | 2005-12-14 | Saint-Gobain Ceramics and Plastics, Inc. | Silcon carbide ceramic components having oxide layer |
US7306748B2 (en) | 2003-04-25 | 2007-12-11 | Saint-Gobain Ceramics & Plastics, Inc. | Methods for machining ceramics |
JP4068499B2 (ja) | 2003-05-09 | 2008-03-26 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US6918821B2 (en) | 2003-11-12 | 2005-07-19 | Dow Global Technologies, Inc. | Materials and methods for low pressure chemical-mechanical planarization |
WO2006133249A2 (en) | 2005-06-06 | 2006-12-14 | Advanced Technology Materials, Inc. | Integrated chemical mechanical polishing composition and process for single platen processing |
JP2007105833A (ja) | 2005-10-14 | 2007-04-26 | Kyocera Chemical Corp | 研磨剤、その製造方法及び研磨方法 |
WO2007088461A1 (en) * | 2006-02-02 | 2007-08-09 | Element Six (Production) (Proprietary) Limited | Glass coated hard and ultra-hard abrasive particles and a method of making them |
EP2215175A1 (en) | 2007-10-05 | 2010-08-11 | Saint-Gobain Ceramics & Plastics, Inc. | Polishing of sapphire with composite slurries |
EP2215176B1 (en) | 2007-10-05 | 2016-01-06 | Saint-Gobain Ceramics & Plastics, Inc. | Improved silicon carbide particles, methods of fabrication, and methods using same |
-
2008
- 2008-10-03 EP EP08835723.1A patent/EP2215176B1/en active Active
- 2008-10-03 CN CN200880110145A patent/CN101815771A/zh active Pending
- 2008-10-03 JP JP2010528160A patent/JP5346940B2/ja active Active
- 2008-10-03 AU AU2008308580A patent/AU2008308580B2/en not_active Ceased
- 2008-10-03 US US12/286,979 patent/US8815396B2/en active Active
- 2008-10-03 KR KR1020127028263A patent/KR101323577B1/ko active IP Right Grant
- 2008-10-03 CA CA2700408A patent/CA2700408A1/en not_active Abandoned
- 2008-10-03 KR KR1020107007976A patent/KR20100068432A/ko active Application Filing
- 2008-10-03 WO PCT/US2008/078741 patent/WO2009046293A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000160139A (ja) * | 1998-12-01 | 2000-06-13 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
JP2003321276A (ja) * | 2002-04-30 | 2003-11-11 | Nippon Steel Corp | 乾燥性に優れた不定形耐火物用炭化けい素原料及び不定形耐火物原料 |
WO2007041199A2 (en) * | 2005-09-30 | 2007-04-12 | Saint-Gobain Ceramics & Plastics, Inc. | Polishing slurries and methods for utilizing same |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8721917B2 (en) | 2007-10-05 | 2014-05-13 | Saint-Gobain Ceramics & Plastics, Inc. | Polishing of sapphire with composite slurries |
WO2012118054A1 (ja) * | 2011-03-01 | 2012-09-07 | 日本パーカライジング株式会社 | 表面処理皮膜付き硬質粒子の製造方法及び表面処理皮膜付き硬質粒子 |
JP2012180238A (ja) * | 2011-03-01 | 2012-09-20 | Nippon Parkerizing Co Ltd | 表面処理皮膜付き硬質粒子の製造方法及び表面処理皮膜付き硬質粒子 |
WO2013077370A1 (ja) * | 2011-11-25 | 2013-05-30 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
WO2013077371A1 (ja) * | 2011-11-25 | 2013-05-30 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
JP2013115154A (ja) * | 2011-11-25 | 2013-06-10 | Fujimi Inc | 研磨用組成物 |
JP2016502757A (ja) * | 2012-11-06 | 2016-01-28 | シンマット, インコーポレーテッドSinmat, Inc. | 平滑なダイヤモンド表面、及びその形成のためのcmp方法 |
JP2014210322A (ja) * | 2013-04-19 | 2014-11-13 | 株式会社フジミインコーポレーテッド | 磁気ディスク基板用研磨組成物キット |
JP2019135297A (ja) * | 2013-05-15 | 2019-08-15 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | N−ビニル−ホモポリマーおよびn−ビニルコポリマーからなる群から選択される1種または複数のポリマーを含む化学機械研磨組成物 |
WO2021181776A1 (ja) * | 2020-03-11 | 2021-09-16 | 株式会社フジミインコーポレーテッド | 炭化ケイ素粉末及びその製造方法 |
JP7477327B2 (ja) | 2020-03-11 | 2024-05-01 | 株式会社フジミインコーポレーテッド | 炭化ケイ素粉末の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
AU2008308580A1 (en) | 2009-04-09 |
KR20100068432A (ko) | 2010-06-23 |
EP2215176B1 (en) | 2016-01-06 |
CA2700408A1 (en) | 2009-04-09 |
AU2008308580B2 (en) | 2011-12-01 |
EP2215176A1 (en) | 2010-08-11 |
US20090101625A1 (en) | 2009-04-23 |
US8815396B2 (en) | 2014-08-26 |
CN101815771A (zh) | 2010-08-25 |
JP5346940B2 (ja) | 2013-11-20 |
KR20120131237A (ko) | 2012-12-04 |
WO2009046293A1 (en) | 2009-04-09 |
KR101323577B1 (ko) | 2013-10-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5346940B2 (ja) | 改善された炭化ケイ素粒子、ならびにその製造方法および使用方法 | |
AU2008308583B2 (en) | Polishing of sapphire with composite slurries | |
US9120960B2 (en) | Composite slurries of nano silicon carbide and alumina | |
JP6023125B2 (ja) | 化学的機械的研磨スラリー組成物およびそれを使用した銅のための方法およびシリコン貫通ビア適用 | |
TWI760589B (zh) | 可得到經改善之表面形狀的鎢緩衝拋光組合物 | |
JP2007535118A (ja) | 化学的機械的な平坦化に用いるための非高分子有機粒子 | |
KR20070105301A (ko) | 메탈레이트 개질된 실리카 입자를 함유하는 수성 슬러리 | |
TW201315849A (zh) | 碳化矽單晶基板及研磨液 | |
JP7254722B2 (ja) | 硬質研磨粒子を用いない硬質材料研磨 | |
TWI664280B (zh) | 高溫cmp組成物及用於使用其之方法 | |
WO2012036087A1 (ja) | 研磨剤および研磨方法 | |
Cheemalapati et al. | Key chemical components in metal CMP slurries | |
JPH1088111A (ja) | 研磨用組成物 | |
KR101279970B1 (ko) | 금속 배선 연마용 cmp 슬러리 조성물 | |
JPWO2016194614A1 (ja) | 研磨用組成物、研磨方法、及び製造方法 | |
JP2023093850A (ja) | 化学機械研磨用組成物および研磨方法 | |
JP2022104814A (ja) | 半導体工程用研磨組成物及び研磨組成物を適用した基板の研磨方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120731 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20120731 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121031 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121213 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20121213 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20121213 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20121228 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130723 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130819 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5346940 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |