US20030015708A1 - Gallium nitride based diodes with low forward voltage and low reverse current operation - Google Patents
Gallium nitride based diodes with low forward voltage and low reverse current operation Download PDFInfo
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- US20030015708A1 US20030015708A1 US09/911,155 US91115501A US2003015708A1 US 20030015708 A1 US20030015708 A1 US 20030015708A1 US 91115501 A US91115501 A US 91115501A US 2003015708 A1 US2003015708 A1 US 2003015708A1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Definitions
- This invention relates to diodes, and more particularly to gallium nitride (GaN) based diodes exhibiting improved forward voltage and reverse leakage current characteristics.
- GaN gallium nitride
- Diode rectifiers are one of the most widely used devices for low voltage switching, power supplies, power converters and related applications. For efficient operation it is desirable for diodes to have low on-state voltage (0.1-0.2V or lower), low reverse leakage current, high voltage blocking capability (20-30V), and high switching speed.
- diodes are pn-junction diodes made from silicon (Si) with impurity elements introduced to modify, in a controlled manner, the diode's operating characteristics. Diodes can also be formed from other semiconductor materials such as Gallium Arsenide (GaAs) and silicon carbide (SiC).
- GaAs Gallium Arsenide
- SiC silicon carbide
- Schottky barrier diodes are a special form of diode rectifier that consist of a rectifying metal-to-semiconductor barrier area instead of a pn junction. When the metal contacts the semiconductor a barrier region is developed at the junction between the two. When properly fabricated the barrier region will minimize charge storage effects and improve the diode switching by shortening the turn-off time.
- Common Schottky diodes have a lower turn-on voltage (approximately 0.5V) than pn-junction diodes and are more desirable in applications where the energy losses in the diodes can have a significant system impact (such as output rectifiers in switching power supplies).
- Schottky diodes are commonly made of GaAs and one disadvantage of this material is that the Fermi level (or surface potential) is fixed or pinned at approximately 0.7 volts. As a result, the on-state forward voltage (V f ) is fixed. Regardless of the type of metal used to contact the semiconductor, the surface potential cannot be lowered to lower the V f .
- the Gallium nitride (GaN) material system has been used in opto-electronic devices such as high efficiency blue and green LEDs and lasers, and electronic devices such as high power microwave transistors.
- GaN has a 3.4 eV wide direct bandgap, high electron velocity (2 ⁇ 10 7 cm/s), high breakdown fields (2 ⁇ 10 6 V/cm) and the availability of heterostructures.
- the present invention provides new Group III nitride based diodes having a low V f .
- Embodiments of the new diode also include structures to keep reverse current (I rev ) relatively low.
- the new diode is preferably formed of the GaN material system, and unlike conventional diodes made from materials such as GaAs, the Fermi level (or surface potential) of GaN is not pinned at its surface states.
- GaN Schottky diodes the barrier height at the metal-to-semiconductor junction varies depending on the type of metal used. Using particular metals will lower the diode's Schottky barrier height and result in a V f in the range of 0.1-0.3V.
- the new GaN Schottky diode generally includes an n+ GaN layer on a substrate, and an n ⁇ GaN layer on the n+ GaN layer opposite the substrate.
- Ohmic metal contacts are included on the n+ GaN layer, isolated from the n ⁇ GaN layer, and a Schottky metal layer is included on the n ⁇ GaN layer.
- the signal to be rectified is applied to the diode across the Schottky metal and ohmic metal contacts.
- a barrier potential forms at the surface of said n ⁇ GaN between the two.
- the Schottky metal layer has a work function, which determines the height of the barrier potential.
- a second embodiment of the present invention reduces I rev by including a trench structure on the diode's surface. This structure prevents an increase in the electric field when the new diode is under reverse bias. As a result, the Schottky barrier potential is lowered, which helps reduce I rev .
- the trench structure is preferably formed on the n ⁇ GaN layer, and comprises a number of parallel, equally spaced trenches with mesa regions between adjacent trenches.
- Each trench has an insulating layer on its sidewalls and bottom surface.
- a continuous Schottky metal layer is on the trench structure, covering the insulating layer and the mesas between the trenches.
- the sidewalls and bottom surface of each trench can be covered with metal instead of an insulator, with the metal electrically isolated from the Schottky metal.
- the mesa regions have a doping concentration and width chosen to produce the desired redistribution of electrical field under the metal-semiconductor contact.
- a third embodiment of the invention provides a GaN tunnel diode with a low V f resulting from the tunneling of electrons through the barrier potential, instead of over it.
- This embodiment has a substrate with an n+ GaN layer sandwiched between the substrate and an n ⁇ GaN layer.
- An AlGaN barrier layer is included on the n ⁇ GaN layer opposite the n+ GaN layer.
- An Ohmic contact is included on the n+ GaN layer and a top contact is included on the AlGaN layer. The signal to be rectified is applied across the Ohmic and top contacts.
- the barrier layer design maximizes the forward tunneling probability while the different thickness and Al mole fraction of the barrier layer result in different forward and reverse operating characteristics.
- the diode has a low V f and low I rev .
- Using a thicker barrier layer and/or increasing the Al mole concentration decreases V f and increases I rev .
- the new diode will assume ohmic operating characteristics, or become a conventional Schottky diode.
- FIG. 1 is a sectional view of a GaN Schottky diode embodiment of the invention.
- FIG. 2 is a diagram showing the work function of common metals verses their atomic number
- FIG. 3 is a band diagram for the diode shown in FIG. 1;
- FIG. 4 is a sectional view of another embodiment of the GaN Schotty diode of FIG. 1, having a trench structure to reduce reverse current leakage;
- FIG. 5 is a sectional view of a tunnel diode embodiment of the invention.
- FIG. 6 is a band diagram for the tunnel diode of FIG. 5 having a barrier layer with a thickness of 22 ⁇ and 30% Al mole fraction;
- FIG. 7 is a diagram showing the voltage/current characteristics of the new tunnel diode having the band diagram of FIG. 6;
- FIG. 8 is a band diagram for the tunnel diode of FIG. 5 having a barrier layer with a thickness of 30 ⁇ and 30% Al mole fraction;
- FIG. 9 is a diagram showing the voltage/current characteristics of the new tunnel diode having the band diagram of FIG. 8;
- FIG. 10 is a band diagram for the tunnel diode of FIG. 5 having a barrier layer with a thickness of 38 ⁇ and 30% Al mole fraction;
- FIG. 11 is a diagram showing the voltage/current characteristics of the new tunnel diode having the band diagram of FIG. 10.
- FIG. 12 is a sectional view of a tunnel diode embodiment of the invention having a trench structure to reduce reverse current leakage.
- FIG. 1 shows a Schottky diode 10 constructed in accordance with the present invention having a reduced metal-to-semiconductor barrier potential.
- the new diode is formed of the Group III nitride based material system or other material systems where the Fermi level is not pinned at its surface states.
- Group III nitrides refer to those semiconductor compounds formed between nitrogen and the elements in Group III of the periodic table, usually aluminum (Al), gallium (Ga), and indium (In).
- Al aluminum
- Ga gallium
- In indium
- the term also refers to ternary and tertiary compounds such as AlGaN and AlInGaN.
- the preferred materials for the new diode are GaN and AlGaN.
- the new diode 10 comprises a substrate 11 that can be either sapphire (Al 2 O 3 ), silicon (Si) or silicon carbide (SiC), with the preferred substrate being a 4H polytype of silicon carbide. Other silicon carbide polytypes can also be used including 3C, 6H and 15R polytypes.
- An Al x Ga 1 ⁇ N buffer layer 12 (where x in between 0 and 1) is included on the substrate 11 and provides an appropriate crystal structure transition between the silicon carbide substrate and the remainder of the diode 10 .
- Silicon carbide has a much closer crystal lattice match to Group III nitrides than sapphire and results in Group III nitride films of higher quality. Silicon carbide also has a very high thermal conductivity so that the total output power of Group III nitride devices on silicon carbide is not limited by the thermal dissipation of the substrate (as is the case with some devices formed on sapphire). Also, the availability of silicon carbide substrates provides the capacity for device isolation and reduced parasitic capacitance that make commercial devices possible. SiC substrates are available from Cree Research, Inc., of Durham, N.C. and methods for producing them are set forth in the scientific literature as well as in a U.S. Pat. Nos. Re. 34,861; 4,946,547; and 5,200,022.
- the new diode 10 has an n+ GaN layer 12 on a substrate 11 and an n ⁇ layer of GaN 13 on the n+ GaN layer 12 , opposite the substrate 11 .
- the n+ layer 12 is highly doped with impurities to a concentration of at least 10 18 per centimeter cubed (cm 3 ), with the preferable concentration being 5 to 10 times this amount.
- the n ⁇ layer 13 has a lower doping concentration but is still n ⁇ type and it preferably has an impurity concentration in the range of 5 ⁇ 10 14 to 5 ⁇ 10 17 per cm 3 .
- the n-layer 13 is preferably 0.5-1 micron thick and the n+ layer 12 is 0.1 to 1.5 microns thick, although other thicknesses will also work.
- n ⁇ GaN layer 13 Portions of the n ⁇ GaN layer 13 are etched down to the n+ layer and ohmic metal contacts 14 a and 14 b are included on the n+ GaN layer in the etched areas so that they are electrically isolated from the n ⁇ GaN layer 13 .
- one or more ohmic contacts can be included on the surface of the substrate that is not covered by the n+ GaN layer 12 . This embodiment is particularly applicable to substrates that are n-type.
- a Schottky metal layer 16 is included on the n ⁇ GaN layer 13 , opposite the n+ GaN layer 12 .
- the work function of a metal is the energy needed to take an electron out of the metal in a vacuum and the Fermi level of a material is the energy level at which there is a 50% probability of finding a charged carrier.
- a semiconductor's electron affinity is the difference between its vacuum energy level and the conduction band energy level.
- FIG. 2 is a graph 20 showing the metal work function 21 for various metal surfaces in a vacuum, verses the particular metal's atomic number 22 .
- the metal should be chosen to provide a low Schottky barrier potential and low V f , but high enough so that the reverse current remains low. For example, if a metal were chosen having a work function equal to the semiconductor's electron affinity, the barrier potential approaches zero. This results in a V f that approaches zero and also increases the diode's reverse current such that the diode becomes ohmic in nature and provides no rectification.
- FIG. 3 shows a typical band diagram 30 for the new Schottky barrier diode taken on a vertical line through the diode. It shows the energy levels of Schottky metal 31 , the GaN semiconductor layers 32 , and the Shottky barrier potential 33 .
- the Fermi energy levels of the two Prior to contact of the GaN semiconductor material by the Schottky metal, the Fermi energy levels of the two are not the same. Once the contact is made and the two materials become a single thermodynamic system, a single Fermi level for the system results. This is accomplished by the flow of electrons from the semiconductor material, which has a higher Fermi level, to the Schottky metal, which has a lower Fermi level. The electrons of the semiconductor lower their energy by flowing into the metal. This leaves the ionized donor levels of the semiconductor somewhat in excess of the number of its free electrons and the semiconductor will have a net positive charge. Electrons that have flowed from the semiconductor into the metal cause the metal have a negative electrostatic charge. The energy levels of the semiconductor are accordingly depressed, and those of the metal are raised. The presence of this surface charge of electrons and the presence of unneutralized charge ionized donor levels of the semiconductor create the dipole layer which forms the barrier potential.
- the signal to be rectified by the new Schottky diode 10 is applied across the Schottky metal 14 and the ohmic contacts 14 a and 14 b .
- the rectification of the signal results from the presence of the barrier potential at the surface of the n ⁇ GaN layer 13 , which inhibits the flow of charged particles within the semiconductor.
- the Schottky metal 16 is positive with respect to the semiconductor (forward bias)
- the energy at the semiconductor side of the barrier is raised. A larger number of free electrons on the conduction band are then able to flow into the metal.
- lowering the barrier level can also increase the reverse leakage current.
- the semiconductor side of the barrier is lowered relative to the metal side so that the electrons are free to flow over the top of the barrier to the semiconductor unopposed.
- the number of electrons present in the metal above the top of the barrier is generally very small compared to the total number of electrons in the semiconductor. The result is a very low current characteristic.
- the voltage is large enough to cut-off all flow of electrons, the current will saturate. The lower the barrier potential, the smaller reverse biases needed for the current to saturate.
- FIG. 4 shows another embodiment of the new GaN Schottky diode 40 that addresses the problem of increased reverse current with decreased barrier height.
- the diode 40 is similar to the above embodiment having a similar substrate 41 , n+ GaN layer 42 , and Ohmic metal contacts 43 a and 43 b , that can alternatively be included on the surface of the substrate. It also has an n ⁇ GaN layer 44 , but instead of this layer being planar, it has a two dimensional trench structure 45 that includes trenches 46 in the n ⁇ GaN layer.
- the preferred trench structure 45 includes trenches 46 that are parallel and equally spaced with mesa regions 49 remaining between adjacent trenches.
- Each trench 46 has an insulating layer 47 covering its sidewalls 46 a and bottom surface 46 b .
- Many different insulating materials can be used with the preferred material being silicon nitride (SiN).
- a Schottky metal layer 48 is included over the entire trench structure 45 , sandwiching the insulating layer between the Schottky metal and the trench sidewalls and bottom surface, and covering the mesa regions 49 .
- the mesa regions provide the direct contact area between the Schottky metal and the n ⁇ GaN layer 44 .
- each trench can be covered by a metal instead of an insulator.
- the Schottky metal should be insulated and/or separated from the trench metal.
- the mesa region 49 has a doping concentration and width chosen to produce a redistribution of electrical field under the mesa's metal-semiconductor junction. This results in the peak of the diodes electrical field being pushed away from the Schottky barrier and reduced in magnitude. This reduces the barrier lowering with increased reverse bias voltage, which helps prevent reverse leakage current from increasing rapidly.
- This redistribution occurs due to the coupling of the charge in the mesa 49 with the Schottky metal 48 on the top surface and with the metal on the trench sidewalls 46 a and bottom surface 46 b .
- the depletion then extends from both the top surface (as in a conventional Schottky rectifier) and the trench sidewalls 46 a , depleting the conduction area from the sidewalls.
- the sidewall depletion reduces the electrical field under the Schottky metal layer 48 and can also be thought of as “pinching off” the reverse leakage current.
- the trench structure 45 keeps the reverse leakage current relatively low, even with a low barrier potentials and a low V f .
- the preferred trench structure 45 has trenches 46 that are one to two times the width of the Schottky barrier area. Accordingly, if the barrier area is 0.7 to 1.0 microns, the trench width could be in the range of 0.7 to 2 microns.
- the above diodes 10 and 40 are fabricated using known techniques. Their n+ and n ⁇ GaN layers are deposited on the substrate by known deposition techniques including but not limited to metal-organic chemical vapor deposition (MOCVD). For diode 10 , the n ⁇ GaN layer 13 is etched to the n+ GaN layer 12 by known etching techniques such as chemical, reactive ion etching (RIE), or ion mill etching. The Schottky and Ohmic metal layers 14 , 14 b and 16 are formed on the diode 10 by standard metallization techniques.
- MOCVD metal-organic chemical vapor deposition
- the n ⁇ GaN layer 44 is etched by chemical or ion mill etching to form the trenches 46 .
- the n ⁇ GaN layer 44 is further etched to the n+ GaN layer 42 for the ohmic metal 43 a and 43 b .
- the SiN insulation layer 47 is then deposited over the entire trench structure 45 and the SiN layer is etched off the mesas 49 .
- a continuous Schottky metal layer 48 is formed by standard metalization techniques over the trench structure 45 , covering the insulation layers 47 and the exposed trench mesas 49 .
- the ohmic metal is also formed on the n+ GaN layer 42 by standard metalization techniques. In the embodiments of the trench diode where the trenches are covered by a metal, the metal can also be deposited by standard metalization techniques.
- FIG. 5 shows another embodiment 50 of the new diode wherein V f is low as a result of electron tunneling through the barrier region under forward bias. By tunneling through the barrier electrons do not need to cross the barrier by conventional thermionic emission over the barrier.
- the new tunnel diode 50 is formed from the Group III nitride based material system and is preferably formed of GaN, AlGaN or InGaN, however other material systems will also work.
- Combinations of polar and non-polar materials can be used including polar on polar and polar on non-polar materials. Some examples of these materials include complex polar oxides such as strontium titanate, lithium niobate, lead zirconium titanate, and non-complex/binary oxides such as zinc oxide.
- the materials can be used on silicon or any silicon/dielectric stack as long as tunneling currents are allowed.
- the diode 50 has a substrate 51 comprised of either sapphire, silicon carbide (SiC) or silicon Si, with SiC being the preferred substrate material for the reasons outlined above.
- the substrate has an n+ GaN layer 52 on it, with an n ⁇ GaN layer 53 on the n+ GaN layer 52 opposite the substrate 51 .
- An AlGaN barrier layer 54 is included on the n ⁇ GaN layer opposite the n+ GaN template layer 52 .
- the barrier layer 54 and n ⁇ GaN layer 53 are etched down to the n+ GaN layer 52 and ohmic metal contacts 55 a and 55 b are included on the layer 52 in the etched areas.
- the ohmic contacts can also be included on the surface of the substrate.
- a metal contact layer 56 is included on the AlGaN barrier layer 54 , opposite the n ⁇ GaN layer 53 .
- the signal to be rectified is applied across the ohmic contacts 55 a and 55 b and top metal contact 56 .
- the AlGaN barrier layer 54 serves as a tunnel barrier. Tunneling across barriers is a quantum mechanical phenomenon and both the thickness and the Al mole fraction of the layer 54 can be varied to maximize the forward tunneling probability.
- the AlGaN—GaN material system a has built in piezoelectric stress, which results in piezoelectric dipoles. Generally both the piezoelectric stress and the induced charge increases with the barrier layer thickness. In the forward bias, the electrons from the piezoelectric charge enhance tunneling since they are available for conduction so that the number of states from which tunneling can occur is increased. Accordingly the new tunnel diode can be made of other polar material exhibiting this type of piezoelectric charge.
- the piezoelectric charge also allows an increase in the reverse leakage current.
- the thicker the barrier layer or increased Al mole fraction results in a lower V f but also results in an increased I rev . Accordingly, there is an optimum barrier layer thickness for a particular Al mole fraction of the barrier layer to achieve operating characteristics of low V f and relatively low I rev
- FIGS. 6 - 11 illustrate the new diode's rectification characteristics for three different thicknesses of an AlGaN barrier layer with 30% Al. For each thickness there is a band energy diagram and a corresponding voltage vs. current graph
- FIG. 6 shows the band diagram 60 for the tunnel diode 50 having 22 ⁇ thick barrier layer 54 . It shows a typical barrier potential 61 at the junction between the barrier layer 63 and the n ⁇ GaN semiconductor layer 62 .
- the top contact metal 64 is on the barrier layer 63 , opposite the semiconductor layer.
- FIG. 7 shows a graph 70 plotting the corresponding current vs. voltage characteristics of the diode in FIG. 6. It has a V f 71 of approximately 0.1V and low reverse current (I rev ) 72 .
- FIG. 8 shows a band diagram 80 for the same tunnel diode with a 30 ⁇ thick barrier layer.
- the increase in the barrier layer thickness increases the barrier region's piezoelectric charge, thereby enhancing tunneling across the barrier.
- This flattens the barrier potential 81 at the junction between the barrier layer 82 and the n ⁇ GaN layer 83 . Charges do not need to overcome the barrier when a forward bias is applied, greatly reducing the diode's V f .
- the flattened barrier also allows for increase reverse leakage current (I rev ).
- FIG. 9 is a graph 90 showing the V f 91 that is lower than the V f in FIG. 7. Also, I rev 92 is increased compared to I rev in FIG. 7.
- FIG. 10 shows a band diagram 100 for the same tunnel diode with a 38 ⁇ thick barrier layer. Again, the increase in the barrier layer thickness increases the piezoelectric charge. At this thickness, the barrier potential 101 between the barrier layer 102 and n ⁇ GaN layer tails down near the junction between the barrier layer and n ⁇ GaN layer, which results in there being no barrier to charges in both forward and reverse bias.
- FIG. 11 shows a graph 110 of the corresponding current vs. voltage characteristics. The diode 100 experiences immediate forward and reverse current in response to forward and reverse bias such that the diode becomes ohmic in nature.
- FIG. 12 shows the new tunneling diode 120 with a trench structure 121 to reduce reverse current.
- the trench structure includes a number of parallel, equally spaced trenches 122 , but in this diode, they are etched through the AlGaN barrier layer 123 and the n ⁇ GaN layer 124 , to the n+ GaN layer 125 (AP GaN Template). There are mesa regions 126 between adjacent trenches 122 .
- the trench sidewalls and bottom surface have an insulation layer 127 with the top Schottky metal layer 128 covering the entire trench structure 121 .
- the trench structure functions in the same way as the embodiment above, reducing the reverse current.
- the diode could also have improved reverse current leakage.
- the trench sidewalls and bottom surface can be covered by a metal as long as it is isolated from the Schottky metal layer 128 .
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US09/911,155 US20030015708A1 (en) | 2001-07-23 | 2001-07-23 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
US10/163,944 US6949774B2 (en) | 2001-07-23 | 2002-06-06 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
CN2007101422176A CN101127368B (zh) | 2001-07-23 | 2002-07-08 | 具有低正向电压及低反向电流操作的氮化镓基底的二极管 |
AT02798906T ATE515803T1 (de) | 2001-07-23 | 2002-07-08 | Dioden auf galliumnitridbasis mit betrieb bei niedriger vorwärtsspannung und niedrigem rückwärtsstrom |
PCT/US2002/021702 WO2003026021A2 (en) | 2001-07-23 | 2002-07-08 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
EP02798906A EP1410445B1 (en) | 2001-07-23 | 2002-07-08 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
CA2454310A CA2454310C (en) | 2001-07-23 | 2002-07-08 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
CNB028179129A CN100373634C (zh) | 2001-07-23 | 2002-07-08 | 具有低正向电压及低反向电流操作的氮化镓基底的二极管 |
JP2003529535A JP4874518B2 (ja) | 2001-07-23 | 2002-07-08 | 低順電圧で低逆電流の動作特性を有する窒化ガリウムベースのダイオード |
EP11154411.0A EP2315256B1 (en) | 2001-07-23 | 2002-07-08 | Gallium nitride based tunnel diodes with low forward voltage and low reverse current operation |
KR1020047001033A KR100917699B1 (ko) | 2001-07-23 | 2002-07-08 | 3족 질화물계 다이오드 |
TW091116362A TW564486B (en) | 2001-07-23 | 2002-07-23 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
US10/445,130 US7476956B2 (en) | 2001-07-23 | 2003-05-20 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
US11/173,035 US7994512B2 (en) | 2001-07-23 | 2005-06-30 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
JP2008264568A JP5032436B2 (ja) | 2001-07-23 | 2008-10-10 | トンネルダイオード |
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US09/911,155 US20030015708A1 (en) | 2001-07-23 | 2001-07-23 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
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US10/163,944 Division US6949774B2 (en) | 2001-07-23 | 2002-06-06 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
US10/445,130 Division US7476956B2 (en) | 2001-07-23 | 2003-05-20 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
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US10/163,944 Expired - Lifetime US6949774B2 (en) | 2001-07-23 | 2002-06-06 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
US10/445,130 Expired - Lifetime US7476956B2 (en) | 2001-07-23 | 2003-05-20 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
US11/173,035 Expired - Fee Related US7994512B2 (en) | 2001-07-23 | 2005-06-30 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
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US10/163,944 Expired - Lifetime US6949774B2 (en) | 2001-07-23 | 2002-06-06 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
US10/445,130 Expired - Lifetime US7476956B2 (en) | 2001-07-23 | 2003-05-20 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
US11/173,035 Expired - Fee Related US7994512B2 (en) | 2001-07-23 | 2005-06-30 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
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US (4) | US20030015708A1 (zh) |
EP (2) | EP1410445B1 (zh) |
JP (2) | JP4874518B2 (zh) |
KR (1) | KR100917699B1 (zh) |
CN (2) | CN100373634C (zh) |
AT (1) | ATE515803T1 (zh) |
CA (1) | CA2454310C (zh) |
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Cited By (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040119063A1 (en) * | 2002-12-04 | 2004-06-24 | Emcore Corporation | Gallium nitride-based devices and manufacturing process |
US20050012113A1 (en) * | 2003-07-17 | 2005-01-20 | Jinn-Kong Sheu | [uv photodetector] |
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US20050179107A1 (en) * | 2004-02-17 | 2005-08-18 | Emcore Corporation | Low doped layer for nitride-based semiconductor device |
US20060148156A1 (en) * | 2003-12-04 | 2006-07-06 | Bae Systems Information And Electronic Systems Integration Inc. | Gan-based permeable base transistor and method of fabrication |
US20060145283A1 (en) * | 2005-01-06 | 2006-07-06 | Zhu Tinggang | Gallium nitride semiconductor device |
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US20070111531A1 (en) * | 2005-03-10 | 2007-05-17 | The Regents Of The University Of California | Technique for the growth of planar semi-polar gallium nitride |
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CN100462699C (zh) * | 2004-01-06 | 2009-02-18 | 晶元光电股份有限公司 | 紫外光检测器 |
US20090072254A1 (en) * | 2007-09-14 | 2009-03-19 | Cree, Inc. | Polarization doping in nitride based diodes |
US20090095966A1 (en) * | 2007-10-10 | 2009-04-16 | Cree, Inc. | Multiple conversion material light emitting diode package and method of fabricating same |
US20090132905A1 (en) * | 2005-04-01 | 2009-05-21 | Masaaki Hoshino | Information processing system, method, and program |
FR2924533A1 (fr) * | 2007-12-04 | 2009-06-05 | Thales Sa | Diode schottky pour application forte puissance et procede de fabrication |
EP1947700A3 (en) * | 2007-01-19 | 2010-01-13 | Cree, Inc. | Low voltage diode with reduced parasitic resistance and method for fabricating |
US7804147B2 (en) | 2006-07-31 | 2010-09-28 | Cree, Inc. | Light emitting diode package element with internal meniscus for bubble free lens placement |
US7813400B2 (en) | 2006-11-15 | 2010-10-12 | Cree, Inc. | Group-III nitride based laser diode and method for fabricating same |
US20100273281A1 (en) * | 2006-11-15 | 2010-10-28 | Cree, Inc. | Laser diode and method for fabricating same |
US7932106B2 (en) | 2004-07-02 | 2011-04-26 | Cree, Inc. | Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming |
US7958931B2 (en) | 2006-01-10 | 2011-06-14 | Sms Siemag Aktiengesellschaft | Method of casting rolling with increased casting speed and subsequent hot rolling of relatively thin metal strands, particularly steel material strands and casting rolling apparatus |
US20110140083A1 (en) * | 2009-12-16 | 2011-06-16 | Daniel Carleton Driscoll | Semiconductor Device Structures with Modulated Doping and Related Methods |
US7994512B2 (en) | 2001-07-23 | 2011-08-09 | Cree, Inc. | Gallium nitride based diodes with low forward voltage and low reverse current operation |
US7999283B2 (en) | 2007-06-14 | 2011-08-16 | Cree, Inc. | Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes |
US20110215339A1 (en) * | 2007-03-20 | 2011-09-08 | Power Integrations, Inc. | Termination and contact structures for a high voltage GaN-based heterojunction transistor |
EP2555248A1 (en) * | 2011-08-01 | 2013-02-06 | Samsung Electronics Co., Ltd. | Schottky barrier diode and method for manufacturing the same |
US20130043491A1 (en) * | 2009-06-03 | 2013-02-21 | Cree, Inc. | Schottky Diodes Including Polysilicon Having Low Barrier Heights |
US8415692B2 (en) | 2009-07-06 | 2013-04-09 | Cree, Inc. | LED packages with scattering particle regions |
US8536615B1 (en) | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
US8629525B2 (en) | 2005-11-15 | 2014-01-14 | Power Integrations, Inc. | Second contact schottky metal layer to improve GaN schottky diode performance |
US8633094B2 (en) | 2011-12-01 | 2014-01-21 | Power Integrations, Inc. | GaN high voltage HFET with passivation plus gate dielectric multilayer structure |
US8866169B2 (en) | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
US8916929B2 (en) | 2004-06-10 | 2014-12-23 | Power Integrations, Inc. | MOSFET having a JFET embedded as a body diode |
US8928037B2 (en) | 2013-02-28 | 2015-01-06 | Power Integrations, Inc. | Heterostructure power transistor with AlSiN passivation layer |
US8940620B2 (en) | 2011-12-15 | 2015-01-27 | Power Integrations, Inc. | Composite wafer for fabrication of semiconductor devices |
FR3009129A1 (fr) * | 2013-07-26 | 2015-01-30 | St Microelectronics Tours Sas | Procede de fabrication d'un composant electronique au nitrure de gallium |
US20150034972A1 (en) * | 2013-08-01 | 2015-02-05 | Kabushiki Kaisha Toshiba | Semiconductor device |
US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
US9171967B2 (en) | 2011-11-09 | 2015-10-27 | Tamura Corporation | Schottky barrier diode |
US9231376B2 (en) | 2004-05-10 | 2016-01-05 | The Regents Of The University Of California | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices |
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US9287469B2 (en) | 2008-05-02 | 2016-03-15 | Cree, Inc. | Encapsulation for phosphor-converted white light emitting diode |
CN106328718A (zh) * | 2016-11-04 | 2017-01-11 | 四川洪芯微科技有限公司 | 一种台面二极管 |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
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Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
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US20100140627A1 (en) * | 2005-01-10 | 2010-06-10 | Shelton Bryan S | Package for Semiconductor Devices |
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US7898156B2 (en) * | 2008-03-04 | 2011-03-01 | Georgia Tech Research Corporation | Muscle-driven nanogenerators |
US8022601B2 (en) * | 2008-03-17 | 2011-09-20 | Georgia Tech Research Corporation | Piezoelectric-coated carbon nanotube generators |
US20100326503A1 (en) * | 2008-05-08 | 2010-12-30 | Georgia Tech Research Corporation | Fiber Optic Solar Nanogenerator Cells |
US7705523B2 (en) * | 2008-05-27 | 2010-04-27 | Georgia Tech Research Corporation | Hybrid solar nanogenerator cells |
US8294141B2 (en) * | 2008-07-07 | 2012-10-23 | Georgia Tech Research Corporation | Super sensitive UV detector using polymer functionalized nanobelts |
JP5506258B2 (ja) * | 2008-08-06 | 2014-05-28 | キヤノン株式会社 | 整流素子 |
JP2010109326A (ja) * | 2008-09-30 | 2010-05-13 | Ngk Insulators Ltd | 受光素子および受光素子の作製方法 |
TW201103150A (en) * | 2009-07-10 | 2011-01-16 | Tekcore Co Ltd | Group III-nitride semiconductor Schottky diode and its fabrication method |
US8623451B2 (en) * | 2009-11-10 | 2014-01-07 | Georgia Tech Research Corporation | Large-scale lateral nanowire arrays nanogenerators |
US8558329B2 (en) | 2009-11-13 | 2013-10-15 | Georgia Tech Research Corporation | Piezo-phototronic sensor |
CN101769941B (zh) * | 2010-01-27 | 2013-04-17 | 中国科学院上海技术物理研究所 | GaN基光伏探测器器件结构的电子学检测方法 |
CN101807606B (zh) * | 2010-03-04 | 2011-05-25 | 吉林大学 | n型氧化锌/p型金刚石异质结隧道二极管及其制作方法 |
US8367462B2 (en) | 2010-04-21 | 2013-02-05 | Georgia Tech Research Corporation | Large-scale fabrication of vertically aligned ZnO nanowire arrays |
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US8518736B2 (en) | 2010-12-29 | 2013-08-27 | Georgia Tech Research Corporation | Growth and transfer of monolithic horizontal nanowire superstructures onto flexible substrates |
CN102184971A (zh) * | 2011-04-02 | 2011-09-14 | 张家港意发功率半导体有限公司 | 沟槽型碳化硅肖特基功率器件 |
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CN104025345B (zh) | 2011-09-13 | 2017-05-03 | 佐治亚技术研究公司 | 自充电电源组 |
US8643134B2 (en) | 2011-11-18 | 2014-02-04 | Avogy, Inc. | GaN-based Schottky barrier diode with field plate |
US8836071B2 (en) * | 2011-11-18 | 2014-09-16 | Avogy, Inc. | Gallium nitride-based schottky barrier diode with aluminum gallium nitride surface layer |
US8946031B2 (en) * | 2012-01-18 | 2015-02-03 | United Microelectronics Corp. | Method for fabricating MOS device |
US8772786B2 (en) * | 2012-07-13 | 2014-07-08 | Raytheon Company | Gallium nitride devices having low ohmic contact resistance |
US9024395B2 (en) | 2012-09-07 | 2015-05-05 | Georgia Tech Research Corporation | Taxel-addressable matrix of vertical nanowire piezotronic transistors |
US9455399B2 (en) | 2012-09-12 | 2016-09-27 | Georgia Tech Research Corporation | Growth of antimony doped P-type zinc oxide nanowires for optoelectronics |
JP5677394B2 (ja) * | 2012-09-28 | 2015-02-25 | 株式会社東芝 | パスゲート及び半導体記憶装置 |
US9911813B2 (en) | 2012-12-11 | 2018-03-06 | Massachusetts Institute Of Technology | Reducing leakage current in semiconductor devices |
JP6269276B2 (ja) * | 2014-04-11 | 2018-01-31 | 豊田合成株式会社 | 半導体装置、半導体装置の製造方法 |
US9899482B2 (en) * | 2015-08-11 | 2018-02-20 | Hrl Laboratories, Llc | Tunnel barrier schottky |
CN105321994B (zh) * | 2015-11-06 | 2018-08-17 | 江苏能华微电子科技发展有限公司 | 一种氮化镓二极管及其制备方法 |
CN106024746B (zh) * | 2016-07-25 | 2018-08-17 | 扬州扬杰电子科技股份有限公司 | 一种适用于金属丝键合的trench肖特基芯片及其加工工艺 |
JP2018037585A (ja) * | 2016-09-02 | 2018-03-08 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
CN106784022A (zh) * | 2016-12-20 | 2017-05-31 | 英诺赛科(珠海)科技有限公司 | Sbd器件及其制备方法 |
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TW201911583A (zh) | 2017-07-26 | 2019-03-16 | 新唐科技股份有限公司 | 異質接面蕭特基二極體元件 |
CN108550622A (zh) * | 2018-03-16 | 2018-09-18 | 扬州科讯威半导体有限公司 | 一种氮化镓肖特基势垒二极管及其制造方法 |
CN108767018B (zh) * | 2018-05-22 | 2022-01-25 | 中国工程物理研究院电子工程研究所 | 一种制作高频GaN基薄膜肖特基器件的外延结构及工艺方法 |
CN109786531B (zh) * | 2019-01-30 | 2020-04-03 | 吉林大学 | 一种基于极化诱导原理的AlGaN基隧穿结结构及其制备方法 |
CN110137267A (zh) * | 2019-05-15 | 2019-08-16 | 上海科技大学 | 一种垂直型氮化镓肖特基二极管器件及其制备方法 |
Family Cites Families (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4152044A (en) * | 1977-06-17 | 1979-05-01 | International Telephone And Telegraph Corporation | Galium aluminum arsenide graded index waveguide |
US4675575A (en) * | 1984-07-13 | 1987-06-23 | E & G Enterprises | Light-emitting diode assemblies and systems therefore |
FR2586844B1 (fr) | 1985-08-27 | 1988-04-29 | Sofrela Sa | Dispositif de signalisation utilisant des diodes electroluminescentes. |
JPH07120807B2 (ja) * | 1986-12-20 | 1995-12-20 | 富士通株式会社 | 定電流半導体装置 |
JPS63156367A (ja) * | 1986-12-20 | 1988-06-29 | Fujitsu Ltd | レベル・シフト・ダイオ−ド |
JPS63288061A (ja) * | 1987-05-20 | 1988-11-25 | Fujitsu Ltd | 半導体負性抵抗素子 |
US4866005A (en) | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
JPH02297965A (ja) | 1989-05-12 | 1990-12-10 | Sanken Electric Co Ltd | 半導体装置 |
US4946547A (en) | 1989-10-13 | 1990-08-07 | Cree Research, Inc. | Method of preparing silicon carbide surfaces for crystal growth |
US5034783A (en) * | 1990-07-27 | 1991-07-23 | At&T Bell Laboratories | Semiconductor device including cascadable polarization independent heterostructure |
US5200022A (en) | 1990-10-03 | 1993-04-06 | Cree Research, Inc. | Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product |
JPH04302173A (ja) * | 1991-03-29 | 1992-10-26 | Japan Synthetic Rubber Co Ltd | 薄膜ダイオード |
JP3068119B2 (ja) * | 1991-09-10 | 2000-07-24 | サンケン電気株式会社 | ショットキ障壁を有する半導体装置 |
JP3173117B2 (ja) * | 1992-03-30 | 2001-06-04 | 株式会社村田製作所 | ショットキーバリア半導体装置 |
US5241195A (en) * | 1992-08-13 | 1993-08-31 | North Carolina State University At Raleigh | Merged P-I-N/Schottky power rectifier having extended P-I-N junction |
DE4228895C2 (de) * | 1992-08-29 | 2002-09-19 | Bosch Gmbh Robert | Kraftfahrzeug-Beleuchtungseinrichtung mit mehreren Halbleiterlichtquellen |
BE1007865A3 (nl) * | 1993-12-10 | 1995-11-07 | Philips Electronics Nv | Tunnel schakelelement met verschillende blijvende schakeltoestanden. |
US5497840A (en) * | 1994-11-15 | 1996-03-12 | Bestline Liner Systems | Process for completing a well |
US5628917A (en) * | 1995-02-03 | 1997-05-13 | Cornell Research Foundation, Inc. | Masking process for fabricating ultra-high aspect ratio, wafer-free micro-opto-electromechanical structures |
US5670798A (en) | 1995-03-29 | 1997-09-23 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
US6388272B1 (en) | 1996-03-07 | 2002-05-14 | Caldus Semiconductor, Inc. | W/WC/TAC ohmic and rectifying contacts on SiC |
JP4022783B2 (ja) * | 1996-04-19 | 2007-12-19 | 富士通株式会社 | 酸化物電子装置 |
US5612567A (en) * | 1996-05-13 | 1997-03-18 | North Carolina State University | Schottky barrier rectifiers and methods of forming same |
TW383508B (en) | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
JPH10209569A (ja) * | 1997-01-16 | 1998-08-07 | Hewlett Packard Co <Hp> | p型窒化物半導体装置とその製造方法 |
FR2759188B1 (fr) | 1997-01-31 | 1999-04-30 | Thery Hindrick | Dispositif de signalisation lumineuse, notamment pour regulation du trafic routier |
WO1998037584A1 (en) * | 1997-02-20 | 1998-08-27 | The Board Of Trustees Of The University Of Illinois | Solid state power-control device using group iii nitrides |
US5767534A (en) * | 1997-02-24 | 1998-06-16 | Minnesota Mining And Manufacturing Company | Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device |
DE19723176C1 (de) | 1997-06-03 | 1998-08-27 | Daimler Benz Ag | Leistungshalbleiter-Bauelement und Verfahren zu dessen Herstellung |
US6784463B2 (en) * | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
US6362495B1 (en) * | 1998-03-05 | 2002-03-26 | Purdue Research Foundation | Dual-metal-trench silicon carbide Schottky pinch rectifier |
JP3817915B2 (ja) * | 1998-07-31 | 2006-09-06 | 株式会社デンソー | ショットキーダイオード及びその製造方法 |
JP2000150920A (ja) * | 1998-11-12 | 2000-05-30 | Nippon Telegr & Teleph Corp <Ntt> | ショットキ接合型半導体ダイオード装置の製法 |
US6093952A (en) * | 1999-03-31 | 2000-07-25 | California Institute Of Technology | Higher power gallium nitride schottky rectifier |
US6389051B1 (en) * | 1999-04-09 | 2002-05-14 | Xerox Corporation | Structure and method for asymmetric waveguide nitride laser diode |
GB9912583D0 (en) * | 1999-05-28 | 1999-07-28 | Arima Optoelectronics Corp | A light emitting diode having a two well system with asymmetric tunneling |
US6263823B1 (en) | 1999-06-25 | 2001-07-24 | Input/Output, Inc. | Connection system for connecting equipment to underwater cables |
US6252258B1 (en) * | 1999-08-10 | 2001-06-26 | Rockwell Science Center Llc | High power rectifier |
US6331944B1 (en) * | 2000-04-13 | 2001-12-18 | International Business Machines Corporation | Magnetic random access memory using a series tunnel element select mechanism |
CN1203557C (zh) * | 2000-05-29 | 2005-05-25 | 电灯专利信托有限公司 | 基于发光二极管的发射白光的照明设备 |
US6526082B1 (en) * | 2000-06-02 | 2003-02-25 | Lumileds Lighting U.S., Llc | P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction |
US6330111B1 (en) * | 2000-06-13 | 2001-12-11 | Kenneth J. Myers, Edward Greenberg | Lighting elements including light emitting diodes, microprism sheet, reflector, and diffusing agent |
US6331915B1 (en) * | 2000-06-13 | 2001-12-18 | Kenneth J. Myers | Lighting element including light emitting diodes, microprism sheet, reflector, and diffusing agent |
US6737801B2 (en) | 2000-06-28 | 2004-05-18 | The Fox Group, Inc. | Integrated color LED chip |
JP3839236B2 (ja) * | 2000-09-18 | 2006-11-01 | 株式会社小糸製作所 | 車両用灯具 |
JP2002151928A (ja) | 2000-11-08 | 2002-05-24 | Toshiba Corp | アンテナ、及びアンテナを内蔵する電子機器 |
AT410266B (de) | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | Lichtquelle mit einem lichtemittierenden element |
US6746889B1 (en) * | 2001-03-27 | 2004-06-08 | Emcore Corporation | Optoelectronic device with improved light extraction |
AU2002307008C1 (en) * | 2001-03-30 | 2008-10-30 | The Regents Of The University Of California | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
US20030015708A1 (en) * | 2001-07-23 | 2003-01-23 | Primit Parikh | Gallium nitride based diodes with low forward voltage and low reverse current operation |
US6833564B2 (en) | 2001-11-02 | 2004-12-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride separate confinement heterostructure light emitting devices |
WO2003044870A1 (fr) | 2001-11-22 | 2003-05-30 | Mireille Georges | Dispositif optique d'eclairage a diodes electroluminescentes |
AU2002359628A1 (en) | 2001-12-06 | 2003-06-23 | Hrl Laboratories, Llc | High power-low noise microwave gan heterojunction field effet transistor |
US6878975B2 (en) * | 2002-02-08 | 2005-04-12 | Agilent Technologies, Inc. | Polarization field enhanced tunnel structures |
EP1490453B1 (en) | 2002-03-25 | 2012-08-15 | Philips Intellectual Property & Standards GmbH | Tri-color white light led lamp |
US7262434B2 (en) | 2002-03-28 | 2007-08-28 | Rohm Co., Ltd. | Semiconductor device with a silicon carbide substrate and ohmic metal layer |
GB0212011D0 (en) | 2002-05-24 | 2002-07-03 | Univ Heriot Watt | Process for fabricating a security device |
KR100495215B1 (ko) | 2002-12-27 | 2005-06-14 | 삼성전기주식회사 | 수직구조 갈륨나이트라이드 발광다이오드 및 그 제조방법 |
JP4274843B2 (ja) | 2003-04-21 | 2009-06-10 | シャープ株式会社 | Ledデバイスおよびそれを用いた携帯電話機器、デジタルカメラおよびlcd表示装置 |
US7087936B2 (en) * | 2003-04-30 | 2006-08-08 | Cree, Inc. | Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction |
TWI291770B (en) | 2003-11-14 | 2007-12-21 | Hon Hai Prec Ind Co Ltd | Surface light source device and light emitting diode |
US6932497B1 (en) * | 2003-12-17 | 2005-08-23 | Jean-San Huang | Signal light and rear-view mirror arrangement |
US7102152B2 (en) | 2004-10-14 | 2006-09-05 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Device and method for emitting output light using quantum dots and non-quantum fluorescent material |
KR100566700B1 (ko) | 2004-01-15 | 2006-04-03 | 삼성전자주식회사 | 반도체 공정에서 포토레지스트 패턴 형성 방법,포토레지스트 패턴 형성용 템플레이트 및 이의 제조 방법. |
US7170111B2 (en) | 2004-02-05 | 2007-01-30 | Cree, Inc. | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same |
EP1653255A3 (en) | 2004-10-29 | 2006-06-21 | Pentair Water Pool and Spa, Inc. | Selectable beam lens for underwater light |
US7194170B2 (en) * | 2004-11-04 | 2007-03-20 | Palo Alto Research Center Incorporated | Elastic microchannel collimating arrays and method of fabrication |
JP5140922B2 (ja) | 2005-01-17 | 2013-02-13 | オムロン株式会社 | 発光光源及び発光光源アレイ |
TWI255566B (en) | 2005-03-04 | 2006-05-21 | Jemitek Electronics Corp | Led |
KR20080042798A (ko) | 2005-06-27 | 2008-05-15 | 라미나 라이팅, 인크. | 발광 다이오드 패키지 및 제작방법 |
JP2008545279A (ja) | 2005-07-05 | 2008-12-11 | インターナショナル レクティファイアー コーポレイション | サージ能力が向上されたショットキーダイオード |
US7214626B2 (en) * | 2005-08-24 | 2007-05-08 | United Microelectronics Corp. | Etching process for decreasing mask defect |
WO2007121486A2 (en) | 2006-04-18 | 2007-10-25 | Lamina Lighting, Inc. | Optical devices for controlled color mixing |
US7820075B2 (en) | 2006-08-10 | 2010-10-26 | Intematix Corporation | Phosphor composition with self-adjusting chromaticity |
-
2001
- 2001-07-23 US US09/911,155 patent/US20030015708A1/en not_active Abandoned
-
2002
- 2002-06-06 US US10/163,944 patent/US6949774B2/en not_active Expired - Lifetime
- 2002-07-08 WO PCT/US2002/021702 patent/WO2003026021A2/en active Application Filing
- 2002-07-08 CA CA2454310A patent/CA2454310C/en not_active Expired - Lifetime
- 2002-07-08 JP JP2003529535A patent/JP4874518B2/ja not_active Expired - Lifetime
- 2002-07-08 CN CNB028179129A patent/CN100373634C/zh not_active Expired - Lifetime
- 2002-07-08 CN CN2007101422176A patent/CN101127368B/zh not_active Expired - Lifetime
- 2002-07-08 AT AT02798906T patent/ATE515803T1/de not_active IP Right Cessation
- 2002-07-08 EP EP02798906A patent/EP1410445B1/en not_active Expired - Lifetime
- 2002-07-08 EP EP11154411.0A patent/EP2315256B1/en not_active Expired - Lifetime
- 2002-07-08 KR KR1020047001033A patent/KR100917699B1/ko active IP Right Grant
- 2002-07-23 TW TW091116362A patent/TW564486B/zh not_active IP Right Cessation
-
2003
- 2003-05-20 US US10/445,130 patent/US7476956B2/en not_active Expired - Lifetime
-
2005
- 2005-06-30 US US11/173,035 patent/US7994512B2/en not_active Expired - Fee Related
-
2008
- 2008-10-10 JP JP2008264568A patent/JP5032436B2/ja not_active Expired - Lifetime
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US20080265259A1 (en) * | 2003-12-04 | 2008-10-30 | Bae Systems Information And Electronic Systems Integration, Inc. | GaN-BASED PERMEABLE BASE TRANSISTOR AND METHOD OF FABRICATION |
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US7932106B2 (en) | 2004-07-02 | 2011-04-26 | Cree, Inc. | Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming |
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US20110169030A1 (en) * | 2004-07-02 | 2011-07-14 | Cree, Inc. | Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming |
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US20090035925A1 (en) * | 2005-01-06 | 2009-02-05 | Zhu Tinggang | Gallium Nitride Semiconductor Device |
US7436039B2 (en) * | 2005-01-06 | 2008-10-14 | Velox Semiconductor Corporation | Gallium nitride semiconductor device |
US20060145283A1 (en) * | 2005-01-06 | 2006-07-06 | Zhu Tinggang | Gallium nitride semiconductor device |
US7863172B2 (en) | 2005-01-06 | 2011-01-04 | Power Integrations, Inc. | Gallium nitride semiconductor device |
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US8169003B2 (en) | 2007-03-20 | 2012-05-01 | Power Integrations, Inc. | Termination and contact structures for a high voltage GaN-based heterojunction transistor |
US20110215339A1 (en) * | 2007-03-20 | 2011-09-08 | Power Integrations, Inc. | Termination and contact structures for a high voltage GaN-based heterojunction transistor |
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US20090072254A1 (en) * | 2007-09-14 | 2009-03-19 | Cree, Inc. | Polarization doping in nitride based diodes |
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US11791442B2 (en) | 2007-10-31 | 2023-10-17 | Creeled, Inc. | Light emitting diode package and method for fabricating same |
FR2924533A1 (fr) * | 2007-12-04 | 2009-06-05 | Thales Sa | Diode schottky pour application forte puissance et procede de fabrication |
WO2009071493A1 (fr) * | 2007-12-04 | 2009-06-11 | Thales | Diode schottky pour application forte puissance et procede de fabrication |
US9287469B2 (en) | 2008-05-02 | 2016-03-15 | Cree, Inc. | Encapsulation for phosphor-converted white light emitting diode |
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US8536615B1 (en) | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
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US9412882B2 (en) | 2011-11-09 | 2016-08-09 | Tamura Corporation | Schottky barrier diode |
US9171967B2 (en) | 2011-11-09 | 2015-10-27 | Tamura Corporation | Schottky barrier diode |
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US8633094B2 (en) | 2011-12-01 | 2014-01-21 | Power Integrations, Inc. | GaN high voltage HFET with passivation plus gate dielectric multilayer structure |
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EP2865008A4 (en) * | 2012-06-22 | 2016-02-24 | Hrl Lab Llc | STRAPAPER DIODE AND METHOD FOR THE PRODUCTION THEREOF |
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US8928037B2 (en) | 2013-02-28 | 2015-01-06 | Power Integrations, Inc. | Heterostructure power transistor with AlSiN passivation layer |
FR3009129A1 (fr) * | 2013-07-26 | 2015-01-30 | St Microelectronics Tours Sas | Procede de fabrication d'un composant electronique au nitrure de gallium |
US20150034972A1 (en) * | 2013-08-01 | 2015-02-05 | Kabushiki Kaisha Toshiba | Semiconductor device |
US9349807B2 (en) * | 2013-08-01 | 2016-05-24 | Kabushiki Kaisha Toshiba | Semiconductor device having GaN-based layer |
US10340356B2 (en) * | 2015-12-25 | 2019-07-02 | Idemitsu Kosan Co., Ltd. | Laminated article |
CN106328718A (zh) * | 2016-11-04 | 2017-01-11 | 四川洪芯微科技有限公司 | 一种台面二极管 |
US11201250B2 (en) | 2019-04-16 | 2021-12-14 | Electronics And Telecommunications Research Institute | Schottky barrier diode and method for manufacturing the same |
CN110491932A (zh) * | 2019-07-23 | 2019-11-22 | 西安电子科技大学 | 氮化镓肖特基二极管及其制作方法 |
US11749758B1 (en) | 2019-11-05 | 2023-09-05 | Semiq Incorporated | Silicon carbide junction barrier schottky diode with wave-shaped regions |
US11469333B1 (en) | 2020-02-19 | 2022-10-11 | Semiq Incorporated | Counter-doped silicon carbide Schottky barrier diode |
CN113964181A (zh) * | 2021-09-07 | 2022-01-21 | 西安电子科技大学广州研究院 | 一种pn结基极耦合的氮化镓肖特基二极管及制备方法 |
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JP2009016875A (ja) | 2009-01-22 |
US7476956B2 (en) | 2009-01-13 |
CA2454310C (en) | 2015-07-07 |
EP2315256A2 (en) | 2011-04-27 |
US20030062525A1 (en) | 2003-04-03 |
CN1555581A (zh) | 2004-12-15 |
US6949774B2 (en) | 2005-09-27 |
JP5032436B2 (ja) | 2012-09-26 |
JP4874518B2 (ja) | 2012-02-15 |
WO2003026021A3 (en) | 2003-11-20 |
US20040080010A1 (en) | 2004-04-29 |
EP1410445A2 (en) | 2004-04-21 |
ATE515803T1 (de) | 2011-07-15 |
EP1410445B1 (en) | 2011-07-06 |
US20050242366A1 (en) | 2005-11-03 |
CN100373634C (zh) | 2008-03-05 |
KR20040030849A (ko) | 2004-04-09 |
US7994512B2 (en) | 2011-08-09 |
KR100917699B1 (ko) | 2009-09-21 |
JP2005503675A (ja) | 2005-02-03 |
EP2315256A3 (en) | 2011-06-29 |
CN101127368B (zh) | 2010-08-25 |
EP2315256B1 (en) | 2015-04-08 |
CN101127368A (zh) | 2008-02-20 |
CA2454310A1 (en) | 2003-03-27 |
WO2003026021A2 (en) | 2003-03-27 |
TW564486B (en) | 2003-12-01 |
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