CN105321994B - 一种氮化镓二极管及其制备方法 - Google Patents

一种氮化镓二极管及其制备方法 Download PDF

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CN105321994B
CN105321994B CN201510751506.0A CN201510751506A CN105321994B CN 105321994 B CN105321994 B CN 105321994B CN 201510751506 A CN201510751506 A CN 201510751506A CN 105321994 B CN105321994 B CN 105321994B
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gallium nitride
nitride layer
type gallium
layer
diode
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CN105321994A (zh
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张葶葶
李亦衡
王东盛
苗操
魏鸿源
严文胜
朱廷刚
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JIANGSU NENGHUA MICROELECTRONIC TECHNOLOGY DEVELOPMENT Co Ltd
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JIANGSU NENGHUA MICROELECTRONIC TECHNOLOGY DEVELOPMENT Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
    • H01L29/66204—Diodes
    • H01L29/66212—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

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  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
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  • General Physics & Mathematics (AREA)
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Abstract

本发明提供一种氮化镓二极管及其制备方法，该氮化镓二极管增加了阳极金属层与N型氮化镓层等半导体之间的肖特基势垒高度，从而降低金属‑半导体之间的漏电流。该氮化镓二极管，包括：衬底；N型氮化镓层，其形成于所述衬底的上表面上；P型氮化镓层，其形成于所述N型氮化镓层的上表面上；阳极金属层，其形成于所述P型氮化镓层的上表面上与所述P型氮化镓层形成肖特基接触。所述P型氮化镓层的厚度为5~200nm。

Description

一种氮化镓二极管及其制备方法
技术领域
本发明涉及一种氮化镓二极管及其制备方法。
背景技术
现有技术中的一种氮化镓二极管的结构如图1所示。结合图1所示，现有技术中，在衬底1（硅、蓝宝石、碳化硅）上生长N型氮化镓层2，在N型氮化镓层2上沉积相互隔离的阳极金属层3和阴极金属层5以构成二极管。上述结构的氮化镓二极管具有如下缺点：阳极金属与N型氮化镓层之间的肖特基势垒高度较低，阳极金属-半导体之间的反向漏电流较高。
发明内容
针对上述问题，本发明的目的是提供一种氮化镓二极管及其制备方法，该氮化镓二极管增加了阳极金属层与N型氮化镓层等半导体之间的肖特基势垒高度，从而降低金属-半导体之间的反向漏电流。
为解决上述技术问题，本发明采用的技术方案为：
一种氮化镓二极管，包括：
衬底；
N型氮化镓层，其形成于所述衬底的上表面上；
P型氮化镓层，其形成于所述N型氮化镓层的上表面上；
阳极金属层，其形成于所述P型氮化镓层的上表面上与所述P型氮化镓层形成肖特基接触。
优选地，所述P型氮化镓层的厚度为5~200nm。
一种如上所述的氮化镓二极管的制备方法，所述N型氮化镓层和所述阳极金属层之间通过再生长或离子注入形成所述P型氮化镓层。
优选地，所述P型氮化镓层形成后进行退火。
本发明采用以上技术方案，相比现有技术具有如下优点：通过在阳极金属层和N型氮化镓层等半导体层之间***一层P型氮化镓，增加了阳极金属层与N型氮化镓层等半导体之间的肖特基势垒高度，从而降低金属-半导体之间的反向漏电流，并提升反向击穿电压。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图，其中：
图1为现有技术中的一种氮化镓二极管的结构示意图；
图2为本发明的氮化镓二极管的结构示意图。
上述附图中，1、衬底；2、非掺杂氮化镓层；3、阳极金属层；4、P型氮化镓层；5、阴极金属层。
具体实施方式
下面对本发明的较佳实施例进行详细阐述，以使本发明的优点和特征能更易于被本领域的技术人员理解。
图2所示为本发明的一种氮化镓二极管。结合图2所示，它包括阴极金属层5以及自下至上依次层叠设置的衬底1、N型氮化镓层2、P型氮化镓层4、阳极金属层3，阳极金属层3与P型氮化镓层4形成肖特基接触，阴极金属层5沉积于N型氮化镓层2上且与P型氮化镓层4、阳极金属层3相隔离，即具有一段间距。其中，衬底1可选用硅、蓝宝石、碳化硅等。P型氮化镓层的厚度为5~200nm。
一种上述的氮化镓二极管的制备方法，N型氮化镓层2和阳极金属层3之间通过再生长或离子注入，并加以退火形成所述P型氮化镓层4。
通过在阳极金属层3和N型氮化镓层2之间***一层P型氮化镓4，增加了阳极金属层3与N型氮化镓层2之间的肖特基势垒高度，从而降低金属-半导体之间的漏电流，并提升反向击穿电压。P型氮化镓层4通过再生长和离子注入形成，并加以退火以降低晶格损伤并使掺杂均匀分布。
上述实施例只为说明本发明的技术构思及特点，是一种优选的实施例，其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施，并不能以此限制本发明的保护范围。凡根据本发明的精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围之内。

Claims (4)

1.一种氮化镓二极管，其特征在于，包括：
衬底；
N型氮化镓层，其形成于所述衬底的上表面上；
P型氮化镓层，其形成于所述N型氮化镓层的上表面上；
阳极金属层，其形成于所述P型氮化镓层的上表面上与所述P型氮化镓层形成肖特基接触；
阴极金属层，其沉积于所述N型氮化镓层上且与所述P型氮化镓层、所述阳极金属层具有一段间距。
2.根据权利要求1所述的氮化镓二极管，其特征在于：所述P型氮化镓层的厚度为5~200nm。
3.一种如权利要求1-2任一项所述的氮化镓二极管的制备方法，其特征在于：所述N型氮化镓层和所述阳极金属层之间通过再生长或离子注入形成所述P型氮化镓层。
4.根据权利要求3所述的制备方法，其特征在于：所述P型氮化镓层形成后进行退火。
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JP6683972B2 (ja) * 2016-08-26 2020-04-22 学校法人法政大学 半導体装置とその製造方法および半導体積層物
CN106847934A (zh) * 2017-03-24 2017-06-13 江南大学 利用氟离子注入实现的氮化镓pn结及其制造方法
CN107221565A (zh) * 2017-05-23 2017-09-29 江南大学 基于离子注入氟实现高增益氮化镓肖特基二极管的制备方法
CN113130666A (zh) * 2020-01-10 2021-07-16 苏州晶湛半导体有限公司 肖特基二极管及其制造方法

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CN1681135A (zh) * 2004-04-07 2005-10-12 中国科学院半导体研究所 氮化镓基肖特基势垒高度增强型紫外探测器及制作方法
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EP2421045A1 (en) * 2005-11-15 2012-02-22 Power Integrations, Inc. SECOND SCHOTTKY CONTACT METAL LAYER TO IMPROVE GaN SCHOTTKY DIODE PERFORMANCE

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* Cited by examiner, † Cited by third party
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CN101127368A (zh) * 2001-07-23 2008-02-20 美商克立股份有限公司 具有低正向电压及低反向电流操作的氮化镓基底的二极管
CN1681135A (zh) * 2004-04-07 2005-10-12 中国科学院半导体研究所 氮化镓基肖特基势垒高度增强型紫外探测器及制作方法
EP2421045A1 (en) * 2005-11-15 2012-02-22 Power Integrations, Inc. SECOND SCHOTTKY CONTACT METAL LAYER TO IMPROVE GaN SCHOTTKY DIODE PERFORMANCE

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