FR2977260B1 - Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede - Google Patents
Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procedeInfo
- Publication number
- FR2977260B1 FR2977260B1 FR1155899A FR1155899A FR2977260B1 FR 2977260 B1 FR2977260 B1 FR 2977260B1 FR 1155899 A FR1155899 A FR 1155899A FR 1155899 A FR1155899 A FR 1155899A FR 2977260 B1 FR2977260 B1 FR 2977260B1
- Authority
- FR
- France
- Prior art keywords
- layer
- growth
- producing
- silicon substrate
- gallium nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 2
- 229910002601 GaN Inorganic materials 0.000 title 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910001199 N alloy Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000000407 epitaxy Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
- H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
- Recrystallisation Techniques (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1155899A FR2977260B1 (fr) | 2011-06-30 | 2011-06-30 | Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede |
CN201280032025.9A CN103828019B (zh) | 2011-06-30 | 2012-06-28 | 在硅或类似的基材上制造氮化镓的厚的外延层的方法以及使用所述方法获得的层 |
PCT/EP2012/062587 WO2013001014A1 (fr) | 2011-06-30 | 2012-06-28 | Procédé de fabrication d'une couche épitaxiale épaisse de nitrure de gallium sur un substrat de silicium ou similaire et couche obtenue à l'aide dudit procédé |
US14/129,638 US9093271B2 (en) | 2011-06-30 | 2012-06-28 | Method for manufacturing a thick epitaxial layer of gallium nitride on a silicon or similar substrate and layer obtained using said method |
KR1020147001140A KR102016046B1 (ko) | 2011-06-30 | 2012-06-28 | 실리콘 또는 유사 기판 위에 갈륨 질화물의 두꺼운 에피택셜 층을 제조하는 방법 및 상기 방법을 이용하여 얻어진 층 |
EP12730957.3A EP2727133B1 (fr) | 2011-06-30 | 2012-06-28 | Procédé de fabrication d'une couche épitaxiale épaisse de nitrure de gallium sur un substrat de silicium ou similaire et couche obtenue à l'aide dudit procédé |
JP2014517706A JP2014527707A (ja) | 2011-06-30 | 2012-06-28 | シリコンまたは類似の基板上に窒化ガリウムの厚いエピタキシャル層を形成するための方法、およびこの方法を使用して得られる層 |
TW101123540A TWI468562B (zh) | 2011-06-30 | 2012-06-29 | 製造於矽或類似基材上之氮化鎵厚磊晶層的方法及使用該方法所獲得之層 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1155899A FR2977260B1 (fr) | 2011-06-30 | 2011-06-30 | Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2977260A1 FR2977260A1 (fr) | 2013-01-04 |
FR2977260B1 true FR2977260B1 (fr) | 2013-07-19 |
Family
ID=46420189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1155899A Active FR2977260B1 (fr) | 2011-06-30 | 2011-06-30 | Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede |
Country Status (8)
Country | Link |
---|---|
US (1) | US9093271B2 (fr) |
EP (1) | EP2727133B1 (fr) |
JP (1) | JP2014527707A (fr) |
KR (1) | KR102016046B1 (fr) |
CN (1) | CN103828019B (fr) |
FR (1) | FR2977260B1 (fr) |
TW (1) | TWI468562B (fr) |
WO (1) | WO2013001014A1 (fr) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8748297B2 (en) | 2012-04-20 | 2014-06-10 | Infineon Technologies Ag | Methods of forming semiconductor devices by singulating a substrate by removing a dummy fill material |
KR102066616B1 (ko) * | 2013-05-09 | 2020-01-16 | 엘지이노텍 주식회사 | 반도체 소자 |
US9406564B2 (en) | 2013-11-21 | 2016-08-02 | Infineon Technologies Ag | Singulation through a masking structure surrounding expitaxial regions |
US20150243494A1 (en) * | 2014-02-25 | 2015-08-27 | Texas Instruments Incorporated | Mechanically robust silicon substrate having group iiia-n epitaxial layer thereon |
US9355920B2 (en) | 2014-03-10 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming semiconductor devices and FinFET devices, and FinFET devices |
DE102014105303A1 (de) | 2014-04-14 | 2015-10-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Schichtstruktur als Pufferschicht eines Halbleiterbauelements sowie Schichtstruktur als Pufferschicht eines Halbleiterbauelements |
JP6558367B2 (ja) * | 2014-06-13 | 2019-08-14 | 住友電気工業株式会社 | 半導体積層体、半導体積層体の製造方法および半導体装置の製造方法 |
JP2016164108A (ja) * | 2015-03-06 | 2016-09-08 | 住友化学株式会社 | 窒化物半導体積層体の製造方法及び窒化物半導体積層体 |
US10032870B2 (en) * | 2015-03-12 | 2018-07-24 | Globalfoundries Inc. | Low defect III-V semiconductor template on porous silicon |
US9991417B2 (en) | 2015-07-31 | 2018-06-05 | International Business Machines Corporation | Resonant cavity strained III-V photodetector and LED on silicon substrate |
CN105161578B (zh) * | 2015-08-17 | 2018-03-23 | 中国科学院半导体研究所 | Si衬底上GaN薄膜的生长方法及复合GaN薄膜 |
FR3041470B1 (fr) | 2015-09-17 | 2017-11-17 | Commissariat Energie Atomique | Structure semi-conductrice a tenue en tension amelioree |
CN106548972B (zh) * | 2015-09-18 | 2019-02-26 | 胡兵 | 一种将半导体衬底主体与其上功能层进行分离的方法 |
US10763188B2 (en) * | 2015-12-23 | 2020-09-01 | Intel Corporation | Integrated heat spreader having electromagnetically-formed features |
US11411169B2 (en) | 2017-10-16 | 2022-08-09 | Akoustis, Inc. | Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material |
US10581398B2 (en) * | 2016-03-11 | 2020-03-03 | Akoustis, Inc. | Method of manufacture for single crystal acoustic resonator devices using micro-vias |
US11411168B2 (en) | 2017-10-16 | 2022-08-09 | Akoustis, Inc. | Methods of forming group III piezoelectric thin films via sputtering |
US10523180B2 (en) * | 2016-03-11 | 2019-12-31 | Akoustis, Inc. | Method and structure for single crystal acoustic resonator devices using thermal recrystallization |
FR3049762B1 (fr) | 2016-04-05 | 2022-07-29 | Exagan | Structure semi-conductrice a base de materiau iii-n |
FR3051979B1 (fr) * | 2016-05-25 | 2018-05-18 | Soitec | Procede de guerison de defauts dans une couche obtenue par implantation puis detachement d'un substrat |
US10679852B2 (en) * | 2016-06-13 | 2020-06-09 | QROMIS, Inc. | Multi-deposition process for high quality gallium nitride device manufacturing |
DE102016117030B4 (de) | 2016-07-17 | 2018-07-05 | X-Fab Semiconductor Foundries Ag | Herstellung von Halbleiterstrukturen auf einem Trägersubstrat, die durch Überführungsdruck (Transfer Print) übertragbar sind. |
US11895920B2 (en) | 2016-08-15 | 2024-02-06 | Akoustis, Inc. | Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material |
DE102017101333B4 (de) | 2017-01-24 | 2023-07-27 | X-Fab Semiconductor Foundries Gmbh | Halbleiter und verfahren zur herstellung eines halbleiters |
US10411108B2 (en) * | 2017-03-29 | 2019-09-10 | QROMIS, Inc. | Vertical gallium nitride Schottky diode |
EP3451364B1 (fr) * | 2017-08-28 | 2020-02-26 | Siltronic AG | Plaquette hétéroepitaxiale et procédé de fabrication d'une plaquette hétéroepitaxiale |
US11651954B2 (en) | 2017-09-27 | 2023-05-16 | Cambridge Enterprise Ltd | Method for porosifying a material and semiconductor structure |
US11856858B2 (en) * | 2017-10-16 | 2023-12-26 | Akoustis, Inc. | Methods of forming doped crystalline piezoelectric thin films via MOCVD and related doped crystalline piezoelectric thin films |
GB201801337D0 (en) | 2018-01-26 | 2018-03-14 | Cambridge Entpr Ltd | Method for etching a semiconductor structure |
US11414782B2 (en) | 2019-01-13 | 2022-08-16 | Bing Hu | Method of separating a film from a main body of a crystalline object |
CN110085682B (zh) * | 2019-05-05 | 2021-05-07 | 西安电子科技大学 | 一种共振隧穿二极管及其制作方法 |
CN111430457A (zh) | 2020-04-27 | 2020-07-17 | 华南理工大学 | 一种硅衬底上GaN/二维AlN异质结整流器及其制备方法 |
TWI727773B (zh) * | 2020-04-29 | 2021-05-11 | 合晶科技股份有限公司 | 複合基板及其製造方法 |
CN114256742B (zh) * | 2020-09-21 | 2024-03-15 | 山东华光光电子股份有限公司 | 一种具有超晶格窄波导大功率980nmLD外延片结构及其制备方法 |
CN112909134B (zh) * | 2021-02-05 | 2022-02-08 | 西安瑞芯光通信息科技有限公司 | 一种大功率紫外led的外延生长方法 |
TWI797722B (zh) * | 2021-08-19 | 2023-04-01 | 合晶科技股份有限公司 | 複合基板及其製造方法 |
TWI774596B (zh) * | 2021-10-29 | 2022-08-11 | 環球晶圓股份有限公司 | 半導體磊晶結構 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7118929B2 (en) | 2000-07-07 | 2006-10-10 | Lumilog | Process for producing an epitaxial layer of gallium nitride |
US7560296B2 (en) | 2000-07-07 | 2009-07-14 | Lumilog | Process for producing an epitalixal layer of galium nitride |
JP4298023B2 (ja) * | 1998-10-28 | 2009-07-15 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 窒化物半導体多層堆積基板および窒化物半導体多層堆積基板の形成方法 |
FR2810159B1 (fr) * | 2000-06-09 | 2005-04-08 | Centre Nat Rech Scient | Couche epaisse de nitrure de gallium ou de nitrure mixte de gallium et d'un autre metal, procede de preparation, et dispositif electronique ou optoelectronique comprenant une telle couche |
US6391748B1 (en) * | 2000-10-03 | 2002-05-21 | Texas Tech University | Method of epitaxial growth of high quality nitride layers on silicon substrates |
US6649287B2 (en) | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
JP4749583B2 (ja) * | 2001-03-30 | 2011-08-17 | 豊田合成株式会社 | 半導体基板の製造方法 |
US20030015708A1 (en) * | 2001-07-23 | 2003-01-23 | Primit Parikh | Gallium nitride based diodes with low forward voltage and low reverse current operation |
US6818061B2 (en) * | 2003-04-10 | 2004-11-16 | Honeywell International, Inc. | Method for growing single crystal GaN on silicon |
US8889530B2 (en) * | 2003-06-03 | 2014-11-18 | The Research Foundation Of State University Of New York | Formation of highly dislocation free compound semiconductor on a lattice mismatched substrate |
WO2005060007A1 (fr) | 2003-08-05 | 2005-06-30 | Nitronex Corporation | Transistors a base de nitrure de gallium et procedes associes |
US7323256B2 (en) * | 2003-11-13 | 2008-01-29 | Cree, Inc. | Large area, uniformly low dislocation density GaN substrate and process for making the same |
EP1571241A1 (fr) | 2004-03-01 | 2005-09-07 | S.O.I.T.E.C. Silicon on Insulator Technologies | Méthode de fabrication d'un substrat |
US7339205B2 (en) | 2004-06-28 | 2008-03-04 | Nitronex Corporation | Gallium nitride materials and methods associated with the same |
US7247889B2 (en) | 2004-12-03 | 2007-07-24 | Nitronex Corporation | III-nitride material structures including silicon substrates |
US7273798B2 (en) | 2005-08-01 | 2007-09-25 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Gallium nitride device substrate containing a lattice parameter altering element |
EP1763069B1 (fr) | 2005-09-07 | 2016-04-13 | Soitec | Méthode de fabrication d'un hétérostructure |
US7608526B2 (en) | 2006-07-24 | 2009-10-27 | Asm America, Inc. | Strained layers within semiconductor buffer structures |
FR2908925B1 (fr) | 2006-11-17 | 2009-02-20 | St Microelectronics Sa | PROCEDE D'INTEGRATION D'UN COMPOSANT DE TYPE III-N, TEL QUE DU GaN, SUR UN SUBSTRAT DE SILICIUM (001) NOMINAL |
FR2929445B1 (fr) * | 2008-03-25 | 2010-05-21 | Picogiga Internat | Procede de fabrication d'une couche de nitrure de gallium ou de nitrure de gallium et d'aluminium |
FR2938702B1 (fr) | 2008-11-19 | 2011-03-04 | Soitec Silicon On Insulator | Preparation de surface d'un substrat saphir pour la realisation d'heterostructures |
FR2942910B1 (fr) | 2009-03-06 | 2011-09-30 | Soitec Silicon On Insulator | Procede de fabrication d'une heterostructure visant a reduire l'etat de contrainte en tension du substrat donneur |
JP2011054622A (ja) * | 2009-08-31 | 2011-03-17 | Sumco Corp | シリコン基板とその製造方法 |
CN102652354B (zh) * | 2009-12-15 | 2015-02-18 | 索泰克公司 | 用于重复利用衬底的处理 |
CN201741713U (zh) * | 2010-03-30 | 2011-02-09 | 杭州海鲸光电科技有限公司 | 一种硅基复合衬底 |
-
2011
- 2011-06-30 FR FR1155899A patent/FR2977260B1/fr active Active
-
2012
- 2012-06-28 JP JP2014517706A patent/JP2014527707A/ja active Pending
- 2012-06-28 WO PCT/EP2012/062587 patent/WO2013001014A1/fr active Application Filing
- 2012-06-28 KR KR1020147001140A patent/KR102016046B1/ko active IP Right Grant
- 2012-06-28 EP EP12730957.3A patent/EP2727133B1/fr active Active
- 2012-06-28 CN CN201280032025.9A patent/CN103828019B/zh active Active
- 2012-06-28 US US14/129,638 patent/US9093271B2/en active Active
- 2012-06-29 TW TW101123540A patent/TWI468562B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI468562B (zh) | 2015-01-11 |
WO2013001014A1 (fr) | 2013-01-03 |
CN103828019B (zh) | 2016-12-28 |
US9093271B2 (en) | 2015-07-28 |
KR20140096018A (ko) | 2014-08-04 |
US20140327013A1 (en) | 2014-11-06 |
FR2977260A1 (fr) | 2013-01-04 |
CN103828019A (zh) | 2014-05-28 |
EP2727133A1 (fr) | 2014-05-07 |
EP2727133B1 (fr) | 2020-05-20 |
JP2014527707A (ja) | 2014-10-16 |
KR102016046B1 (ko) | 2019-08-30 |
TW201305397A (zh) | 2013-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2977260B1 (fr) | Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede | |
WO2012050888A3 (fr) | Structures à base de nitrure de gallium à vides infiltrés et leurs procédés de fabrication | |
GB2531453A (en) | Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations | |
WO2006113442A8 (fr) | Technique de separation de plaquettes pour la fabrication de plaquettes de (al, in, ga)n autonomes | |
WO2013036376A3 (fr) | Procédés de croissance épitaxiale de carbure de silicium | |
CN103415915A (zh) | 使用氨预流在硅基材上使氮化铝形核的方法 | |
WO2011046292A3 (fr) | Dispositif à semi-conducteur non polaire ou semi-polaire de grande qualité sur un semi-conducteur nitrure poreux, et procédé pour sa fabrication | |
JP2011135051A5 (fr) | ||
CN101978470A (zh) | 氮化镓或氮化铝镓层的制造方法 | |
KR101672213B1 (ko) | 반도체장치의 제조방법 | |
SG155840A1 (en) | A semiconductor wafer with a heteroepitaxial layer and a method for producing the wafer | |
WO2017016527A3 (fr) | Film mince de gaas développé sur substrat de si, et procédé de préparation de film mince de gaas développé sur substrat de si | |
CN103695999A (zh) | 一种交替供源制备的氮化物单晶薄膜及方法 | |
US9685589B2 (en) | Optoelectronic component with a layer structure | |
CN103710747B (zh) | 一种n源间隔输送制备氮化物单晶薄膜及方法 | |
JP2017208554A (ja) | 半導体積層体 | |
WO2010147357A3 (fr) | Substrat hétérogène, dispositif à semi-conducteurs à base de nitrure l'utilisant et son procédé de fabrication | |
CN207068868U (zh) | 一种硅基氮化镓功率器件 | |
CN106252211A (zh) | 一种AlN外延层的制备方法 | |
CN105810725A (zh) | 硅基氮化镓半导体晶片及其制作方法 | |
CN106684139B (zh) | 基于Si衬底的GaN外延结构及其制备方法 | |
WO2012166732A3 (fr) | Procédé de formation d'une couche de germanium de faible résistivité à une vitesse de croissance élevée sur un substrat en silicium | |
RU2013143729A (ru) | Композиция полупроводниковая подложка, полупроводниковое устройство и способ изготовления | |
CN106783968A (zh) | 含有氮镓铝和氮镓铟的缓存层的半导体器件及其制造方法 | |
CN106910807A (zh) | 一种用于生长外延片的复合衬底及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name |
Owner name: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (, FR Effective date: 20130109 Owner name: SOITEC, FR Effective date: 20130109 Owner name: OMMIC, FR Effective date: 20130109 |
|
TQ | Partial transmission of property |
Owner name: SOITEC, FR Effective date: 20150421 Owner name: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (, FR Effective date: 20150421 |
|
PLFP | Fee payment |
Year of fee payment: 6 |
|
PLFP | Fee payment |
Year of fee payment: 7 |
|
PLFP | Fee payment |
Year of fee payment: 8 |
|
PLFP | Fee payment |
Year of fee payment: 10 |
|
PLFP | Fee payment |
Year of fee payment: 11 |
|
PLFP | Fee payment |
Year of fee payment: 12 |
|
PLFP | Fee payment |
Year of fee payment: 13 |
|
PLFP | Fee payment |
Year of fee payment: 14 |