TWI544548B - 形成使用氧化物襯墊的可流動介電質之方法 - Google Patents

形成使用氧化物襯墊的可流動介電質之方法 Download PDF

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TWI544548B
TWI544548B TW099145306A TW99145306A TWI544548B TW I544548 B TWI544548 B TW I544548B TW 099145306 A TW099145306 A TW 099145306A TW 99145306 A TW99145306 A TW 99145306A TW I544548 B TWI544548 B TW I544548B
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梁靜美
英戈爾尼廷Ｋ
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Description

形成使用氧化物襯墊的可流動介電質之方法
本發明係關於製造半導體的方法。
自從數十年前引進了半導體裝置，半導體裝置的幾何結構在尺寸上已顯著地減小。當代半導體製造設備常規地生產具有45nm、32nm及28nm之特徵結構尺寸的裝置，並且正在發展及實行新的設備來製造具有甚至更小幾何結構的裝置。減小的特徵結構尺寸造成裝置上之結構性特徵結構具有減小的空間尺寸。裝置上之間隙及溝槽的寬度窄化至間隙深度與其寬度的深寬比變得高到足以使用介電材料來填充間隙受到挑戰的程度。在完全填充間隙之前，沉積介電材料傾向會堵塞在頂部，因而在間隙的中間產生孔隙及縫隙。
歷經多年，已經發展出許多技術來防止介電材料堵塞在間隙的頂部，或「修復(heal)」已形成的孔隙及縫隙。已經啟用高度可流動之前驅物材料的方法，其中高度可流動之前驅物可以液相施加至旋塗基材表面(例如，SOG沉積技術)。這些可流動前驅物可流至非常小的基材間隙中並填充非常小的基材間隙，而不會形成孔隙或鬆軟縫隙。然而，一旦沉積這些高度可流動材料之後，必須將其硬化成固體介電材料。
在許多例子中，硬化製程包括熱處理，以自沉積材料移除碳及羥基而留下諸如氧化矽的固體介電材料。不幸地，碳及羥基物種的離開通常會在硬化介電質中留下孔洞，而降低最終材料的品質。此外，硬化介電質亦傾向縮減體積，其可能在介電質與周圍基材的介面處留下裂縫或間隔。在一些例子中，硬化介電質的體積可能減小40%或更多。
因此，需要在結構基材上形成介電材料而不會在基材間隙或溝槽中產生孔隙、縫隙或兩者的新穎沉積製程及材料。也需要以較少孔洞及較少體積減小來硬化可流動介電材料的材料與方法。在本發明中實現此項及其他的需求。
本發明描述形成氧化矽層的方法。本方法可包括以下步驟：混合不含碳之含矽前驅物與氮自由基前驅物，以及沉積含矽及氮層至基材上。藉由流動含氫及氮前驅物至電漿中以在電漿中形成氮自由基前驅物。在沉積含矽及氮層之前，形成氧化矽襯墊層以改善含矽及氮層的附著力、平滑性及可流動性。含矽及氮層可藉由固化及退火該薄膜而轉化為含矽及氧層。本方法亦包括在施加一旋塗式含矽材料之前形成氧化物襯墊層。
本發明實施例包括在基材上形成可流動介電層的方法。該方法包括以下步驟：(1)當基材維持在襯墊沉積溫度時，藉由將基材暴露至含矽襯墊前驅物及含氧襯墊前驅物，以在基材上形成大體上共形之氧化矽襯墊層；以及(2)當基材維持在整體沉積溫度時，在基材上形成不含碳之可流動含矽-氮及氫層。
本發明的其他實施例及特徵結構係部份闡述於下文的實施方式，且部份對熟習此技藝之人士而言可基於檢視本說明書而為顯而易見，或可藉由實施本發明來瞭解。可藉由說明書中描述的工具構件、組合物、及方法來理解及達成本發明的特徵結構及優點。
本發明描述形成氧化矽層的方法。本方法可包括以下步驟：混合不含碳之含矽前驅物與氮自由基前驅物，以及在基材上沉積含矽及氮層。藉由流動含氫及氮前驅物至電漿中以在電漿中形成氮自由基前驅物。在沉積含矽及氮層之前，形成氧化矽襯墊層以改善含矽及氮層的附著力、平滑性及可流動性。含矽及氮層可藉由固化及退火該薄膜而轉化為含矽及氧層。本方法亦包括在施加一旋塗式含矽材料之前形成氧化物襯墊層。
在相繼的處理期間及之後，在基材與含矽及氮層之間引入氧化物襯墊層明顯可改良附著力並減低分層及破裂的發生。根據本揭示實施例使用氧化矽襯墊形成的氧化矽薄膜亦展現較平滑的外表面，顯示其在動態沉積(deposition dynamic)中的修飾。在不將本發明之申請專利範圍結合至可能完全正確或可能完全不正確之理論機構的前提下，矽醇基可存在於氧化矽襯墊層的暴露表面上並可用來增加遷移性，因而增加含矽及氮層的初期(nascent)可流動性。包括氧化矽層的其他優勢包含在氧化矽上有更快速的初始生長速率、在一些應用中有更通用的下方材料。其他優勢也包括容許上方層相對於下方基材的收縮與膨脹。在沉積了多層之後，含矽及氮層可在含氧環境中固化及(或)退火以將該層轉化為氧化矽。
現將描述關於形成氧化矽層之方法與系統的其他細節。
範例氧化矽形成製程
第1圖示出根據本發明實施例製造氧化矽薄膜之方法100之選擇步驟的流程圖。方法100包括使用順流式TEOS及臭氧(O3)在基材上沉積氧化矽襯墊層(操作101)。如本文中描述的其他襯墊沉積，在本發明實施例中，沉積期間的基材溫度係大於400℃、大於500℃、及大於600℃。為了確保沉積物更可流動及平滑，可添加諸如水(H2O，水蒸氣)、HMDS及TMDSO的添加物至TEOS及臭氧(O3)中。基材相對於前驅物組成沉積的相對高溫接著有利於在惰性表面(例如氮化矽)上的沉積。隨後，襯墊呈現一氧化矽表面，其相對於低溫沉積有較低的惰性及較高的導電性。此等諸如次大氣壓CVD(SACVD)的沉積製程為此領域中所熟知，但也可在超過1atm的壓力下實行。在不同實施例中，TEOS的範例流速可為大於0.1gm/min(公克每分鐘)、大於0.5gm/min、大於1 gm/min以及大於3 gm/min。在不同實施例中，可以大於1000sccm、大於3000sccm、大於10000sccm或大於30000sccm的流速流動臭氧。可使用相對惰性的載氣將TEOS及選擇性添加物傳遞至基材，且載氣的質量不包括在上述的傳遞速率(gm/min)。
本方法持續進行且包括提供不含碳之含矽前驅物至基材處理區域(操作102)。不含碳之矽前驅物可為(例如)矽及氮前驅物、矽及氫前驅物、或含矽-氮及氫前驅物、以及其他類型的含矽前驅物。除了不含碳之外，矽前驅物可為不含氧。氧的缺乏導致在從前驅物形成之矽及氮層中有較低濃度的矽醇(Si-OH)基。沉積薄膜中過量的矽醇成份(moieties)會在自沉積層移除羥基(-OH)成份的後沉積步驟期間致使孔隙度及縮減增加。
不含碳之含矽前驅物的特定範例可包括矽烷胺，例如H2N(SiH3)、HN(SiH3)2及N(SiH3)3，以及其他矽烷胺。在不同實施例中，矽烷胺的流速可大於或約200sccm、大於或約300sccm、或大於或約500sccm。所有在本文中給定的流速係用在一雙重腔室基材處理系統。單一晶圓系統將需要這些流速的一半，以及其他晶圓尺寸的流速將需要乘上處理區域來調整大小。這些矽烷胺可混合作為載氣、反應氣體或兩者的添加氣體。這些添加氣體的範例可包括H2、N2、NH3、He及Ar，及其他氣體。不含碳之含矽前驅物的範例亦可單獨包括矽烷(SiH4)或混合其他含矽(例如，N(SiH3)3)、氫(例如，H2)、及(或)氮(例如，N2、NH3)之氣體的矽烷。不含碳之含矽前驅物也可單獨包括二矽烷、三矽烷、甚至是更高序列的矽烷、及氯化矽烷或結合彼此，其係單獨的或彼此結合，或先前提及之不含碳的含矽前驅物。不含碳之含矽前驅物在進入無電漿基材處理區域之前並未在電漿區域(例如，遠端電漿區域)中激發。
氨(NH3)係傳遞至電漿區域以形成氮自由基前驅物(操作104)。氮自由基前驅物為含氮自由基的前驅物，其在基材處理區域外側之電漿區域中由氨產生。例如，含有NH3之穩定的氮前驅物化合物可在腔室電漿區域或在處理腔室外側的遠端電漿系統(RPS)中被活化，以形成氮自由基前驅物，其隨後被輸送至基材處理區域(操作106)。在不同實施例中，氨的流速可大於或約300sccm、大於或約500sccm、或大於或約700sccm，同時可包括諸如氮(N2)及氫(H2)之額外前驅物以調整氮：氫的原子流量比。也可在不使用NH3的情況下產生氮自由基前驅物。在本發明實施例中，流入遠端電漿區域中的穩定氮前驅物可包括H2、N2及N2H4中的一或多者。在腔室電漿區域產生之氮自由基前驅物可為N、NH、NH2等中的一或多者，並可伴隨電漿中形成的離子物種。
在採用腔室電漿區域的實施例中，氮自由基前驅物在從基材處理區域分隔出之基材處理系統的區段中產生，其中前驅物在基材處理區域混合並反應以在沉積基材(例如，半導體晶圓)上沉積矽及氮層。氮自由基前驅物也可伴隨諸如氦、氬等的載氣。在含矽及氮層的生長期間及低溫臭氧固化期間，基材處理區域在本文可描述為「無電漿(plasma-free)」。「無電漿」並非代表區域中完全沒有電漿。在電漿區域中產生的離子化物種確實穿過隔板(噴淋頭)中之孔洞(穿孔)，但不含碳之含矽前驅物並未實質上藉由施加至電漿區域之電漿功率所激發。腔室電漿區域中之電漿的邊界係難以界定，且電漿可能經由噴淋頭中的穿孔侵入基材處理區域。在感應耦合電漿的例子中，可在基材處理區域中直接地引起少量的離子化。再者，可在基材處理區域中產生低強度的電漿，而不消除所形成薄膜的可流動特性。在氮自由基前驅物的產生期間，於基材處理區域中具有遠低於腔室電漿區域之離子密度的電漿並未偏離本文所述「無電漿」的範疇。
在基材處理區域中，不含碳之含矽前驅物及氮自由基前驅物混合並反應，以在沉積基材上形成含矽及氮薄膜(操作108)。經沉積之含矽及氮薄膜可使用一些在沉積表面處致使低沉積速率或高氮自由基通量的配方組合(recipe combination)而共形(conformally)沉積。在其他實施例中，經沉積之含矽及氮薄膜具有不同於習知氮化矽(Si3N4)薄膜沉積技術的可流動特性。所形成的可流動特性允許薄膜流入基材之沉積表面上的窄間隙溝槽以及其他結構中。在不同實施例中，沉積期間(操作108)之基材溫度小於120℃、小於100℃、小於80℃、及小於60℃。
可流動性係可歸因於由於混合氮自由基前驅物與未激發之不含碳之矽前驅物的各種性質。這些性質可包括在沉積薄膜中的顯著氫組成及(或)短鏈聚矽氮烷聚合物的存在。在薄膜的形成期間及之後，這些短鏈生長且連結成網絡以形成更緻密的介電材料。舉例而言，沉積薄膜可具有矽氮烷類型，Si-NH-Si主鏈(backbone)(亦即，Si-N-H薄膜)。當矽前驅物及氮自由基前驅物皆為不含碳，沉積之含矽及氮薄膜亦實質上為不含碳。當然，「不含碳」並非代表薄膜甚至連微量的碳也沒有。碳污染物可能存在於前驅物材料中，其自己找到路徑進入沉積之矽及氮前驅物中。然而，這些碳不純物的量係遠小於將在具有碳成份(例如，TEOS、TMDSO等)之矽前驅物中(例如，在操作101中生長的襯墊層)所發現的量。
在含矽及氮層的沉積之後，沉積基材可在含氧大氣中固化及(或)退火(操作110)。固化可在含臭氧的大氣中於低於或約400℃的基材溫度下發生。在本發明實施例中的一些情況下(例如，基材溫度介於約100℃至約200℃)，已發現可實質上完全地轉化，使得在含氧環境中的相對高溫退火可為非必要的。在固化含矽及氮層之後，可能期望在含氧大氣中退火基材，以進一步將薄膜轉化為氧化矽。含氧大氣可包含一或多種含氧氣體，例如氧分子(O2)、臭氧(O3)、水蒸氣(H2O)、過氧化氫(H2O2)及氮氧化物(NO、NO2、N2O等)、以及其他含氧氣體。含氧大氣可包括氧自由基及羥基物種，例如氧原子(O)、氫氧根(OH)等，其可遠端產生並輸送至基材腔室中。也可存有含氧物種的離子。基材的氧退火溫度可介於約500℃至約1100℃之間。當使用電漿時，其可能位在基材處理區域中、位於噴淋頭所分隔的分隔區域中或位於遠端電漿系統(RPS)中。
固化及氧退火的含氧大氣皆提供氧以將含矽及氮薄膜轉化為氧化矽(SiO2)薄膜。如先前所示，含矽及氮薄膜中缺乏碳造成最終氧化矽薄膜中形成顯著較少的孔洞。此舉在轉化為氧化矽的期間也導致薄膜的體積下降(亦即，縮減)較少。例如，當由含碳之矽前驅物與氮自由基形成的矽-氮-碳層轉化為氧化矽時，可能會減縮40體積%或更高，而實質上不含碳之矽及氮薄膜可能減縮約17體積%或更少。
現參照第2圖，其示出根據本發明實施例圖示在基材間隙中形成氧化矽薄膜之方法200之選擇步驟的另一流程圖。方法200包括在圖案化基材上沉積氧化矽襯墊，其中該基材具有形成在基材上之裝置部件(例如電晶體)之空間及結構中的間隙。間隙可具有界定高度與寬度(亦即H/W)之高寬比(AR)的高度及寬度，高寬比顯著大於1:1(例如5:1或更高、6:1或更高、7:1或更高、8:1或更高、9:1或更高、10:1或更高、11:1或更高、12:1或更高等)。在諸多實施例中，高AR係歸因於小間隙寬度，其範圍自約90nm至約22nm或更小(約90nm、65nm、45nm、32nm、22nm、16nm等)。
使用TEOS與氧(O2)的順流式流動來沉積氧化矽襯墊(操作201)。基材溫度可相同於上述參照第1圖的實施例，且可為相同目的添加相同的添加物。相對高的沉積溫度允許該沉積可較未試圖使用襯墊層的自由基組成沉積而更快地進行。襯墊呈現一氧化矽表面，其相對於低溫沉積有較低的惰性及更高的導電性。此等諸如次大氣壓CVD(SACVD)的沉積製程為此領域中所熟知，但也可在超過1atm的壓力下實行。在不同實施例中，TEOS的範例流速可為大於0.1gm/min(公克每分鐘)、大於0.5gm/min、大於1 gm/min以及大於3 gm/min。在不同實施例中，可以大於3000sccm、大於10000sccm、大於30000sccm或大於60000sccm的流速來流動氧。使用相對惰性的載氣將TEOS及選擇性添加物傳遞至基材，且載氣的質量不包括在上述的傳遞速率(gm/min)。
隨後，基材傳送至基材處理區域(操作202)，且氨(NH3)在分隔的腔室電漿區域中被激發，以形成氮自由基前驅物(操作204)。腔室電漿區域中的電漿產生流經噴淋頭中之穿孔的氮自由基前驅物，噴淋頭將腔室電漿區域從基材處理區域分隔出。不含碳之含矽前驅物係在基材處理區域中與氮自由基前驅物混合(操作206)。可流動之含矽及氮層係沉積在基材上(操作208)。因為層係可流動，其可填充具有高度高寬比的間隙，而不會在填充材料的中心附近產生孔隙或鬆軟縫隙。例如，沉積之可流動材料較不易在其完全填充之前過早堵塞間隙的頂部，而在間隙的中間留下孔隙。基材溫度係低於上述參照第1圖之實施例所討論的溫度。
隨後，經沉積之含矽及氮層可在含臭氧大氣中固化及(或)在含氧大氣中退火(操作210)，以將含矽及氮層轉換成氧化矽。為了緻密化氧化矽層，可在較高基材溫度下於惰性環境中執行進一步退火(未圖示)。在含氧大氣中固化及退火經沉積之含矽及氮層在基材上(包括基材間隙)形成氧化矽層。在實施例中，操作210的製程參數擁有參照第1圖描述的相同範圍。如上所述，氧化矽層相較於使用含碳前驅物形成的相似層(在熱處理步驟之前具有顯著量的碳存在於層中)，具有較少的孔洞及較少的體積下降。在許多例子中，體積下降是稍足以(例如約15體積%或更少)避免進行後熱處理步驟來填充、修復或其他消除因縮減氧化矽而形成在間隙中的空間。
範例氧化矽沉積系統
可實行本發明實施例之沉積腔室可包括高密度電漿化學氣相沉積(HDP-CVD)腔室、電漿增強化學氣相沉積(PECVD)腔室、次大氣壓化學氣相沉積(SACVD)腔室，以及熱化學氣相沉積腔室，與其他類型的腔室。可執行本發明實施例之CVD系統的特定範例包括CENTURA ULTIMA HDP-CVD腔室/系統，及PRODUCERPECVD腔室/系統，其可購自美國加州聖塔克拉拉應用材料公司。
可用於本發明之範例方法之基材處理腔室的範例可包括圖示及描述於共同受讓予Lubomirsky等人之美國臨時專利申請案60/803,499，申請日為2006年5月30日，及篇名為“PROCESS CHAMBER FOR DIELECTRIC GAPFILL”，其全文併入本文作為參考。其他的範例系統可包括圖示及描述於美國專利號6,387,207及6,830,624的系統，其全文併入本文作為參考。
沉積系統的實施例可併入到用於生產積體電路晶片的更大的製造系統。第3圖示出根據所揭示實施例包括沉積、烘烤及固化腔室的此一系統300。在此圖中，一對的FOUP(front opening unified pod，前開口式整合容器)302供應基材(例如300mm直徑的晶圓)，其中基材是藉由機械臂304接收並在放入晶圓處理腔室308a-f之一者之前放入低壓固持區306。第二機械臂310可用來自固持區306將基材晶圓輸送至處理腔室308a-f及返回。
處理腔室308a-f可包括一或多個系統部件，其用於沉積、退火、固化及(或)蝕刻在基材晶圓上的可流動介電薄膜。在一配置中，兩對處理腔室(例如，308c-d及308e-f)可用來沉積可流動介電材料至基材上，且第三對處理腔室(例如，308a-b)可用來退火經沉積的介電質。在另一配置中，相同的兩對處理腔室(例如，308c-d及308e-f)可經配置以同時在基材上沉積及退火可流動介電薄膜，同時第三對腔室(例如，308a-b)可用於UV或電子束(E-beam)固化經沉積之薄膜。在又另一配置中，全部三對腔室(例如308a-f)可經配置以在基材上沉積及固化可流動介電薄膜。在又另一配置中，兩對處理腔室(例如，308c-d及308e-f)可用於同時沉積及UV或電子束固化可流動介電質，同時第三對處理腔室(例如，308a-b)可用於退火介電薄膜。在不同實施例中，所述的任何一或多個製程可在分隔自所示之製造系統的一或多個腔室中執行。
此外，處理腔室308a-f中的一或多個可經配置為濕式處理腔室。這些處理腔室包括在含有濕氣的大氣中加熱可流動介電薄膜。因此，系統300的實施例可包括溼式處理腔室308a-b及退火處理腔室308c-d以在經沉積之介電薄膜上實行溼式及乾式退火。
氧化矽襯墊層可沉積在一或多個經配置以透過次大氣化學氣相沉積(SACVD)而沉積襯墊層的腔室中。也可使用其他方式來描述涉及將基材暴露至TEOS或臭氧或TEOS與氧(O2)之組合的相對高壓製程。此等系統亦可購自美國加州聖塔克拉拉美商應用材料公司。在不同實施例中，氧化矽襯墊層厚度可小於100埃、小於75埃、小於50埃及小於25埃。在沉積氧化矽襯墊層之後，基材可輸送至描述於第4圖之自由基組成的CVD腔室。或者，也可應用旋塗介電質(SOD)、旋塗玻璃(SOG)、或其他旋塗含矽薄膜的方法。旋塗可流動材料將展現較小的分層及破裂。含矽及氮的SOD薄膜將展現本發明實施例的這些優點。
第4A圖為根據所述實施例的基材處理腔室400。遠端電漿系統(RPS)410可處理隨後經過氣體入口組件411的氣體。在氣體入口組件411中可看到兩個分離的氣體供應通道。第一通道412攜帶通過遠端電漿系統RPS 410的氣體，同時第二通道413旁通RPS 400。在所揭示的實施例中，第一通道402可用於製程氣體，以及第二通道413可用於處理氣體。圖示之頂蓋(或導電頂部)421及穿孔隔板453具有絕緣環424位於其間，此可使AC電位相對於穿孔隔板453施加至頂蓋421。製程氣體經過第一通道412進入腔室電漿區域420，並可藉由腔室電漿區域420(單獨或結合RPS 410)中之電漿來激發。腔室電漿區域420及(或)RPS 410的組合可代表本文的遠端電漿系統。穿孔隔板(亦稱為噴淋頭)453將腔室電漿區域420與噴淋頭453下方的基材處理區域470分隔。噴淋頭453允許電漿存在於腔室電漿區域420中，以防止直接激發基材處理區域470中的氣體，同時仍允許經激發的物種從腔室電漿區域420進入基材處理區域470。
噴淋頭453定位在腔室電漿區域420及基材處理區域470之間，並允許在腔室電漿區域420中產生的電漿排放物(前驅物或其他氣體的激發衍生物)通過複數個通孔456，其中通孔456穿過板的厚度。噴淋頭453也具有一或多個中空體積451，中空體積451可被填充以蒸氣或氣體(例如含矽前驅物)形式的前驅物並通過小孔455而進入基材處理區域470，而不直接進入腔室電漿區域420。在所揭示的實施例中，噴淋頭453較通孔456之最小直徑450的長度來得厚。為了維持從腔室電漿區域420穿越至基材處理區域470之激發物種的顯著濃度，可藉由形成部分穿過噴淋頭453之通孔456的較大直徑部分來限制通孔之最小直徑450的長度426。在所述的實施例中，通孔456之最小直徑450的長度可相同於或小於通孔456之最小直徑的數量級。
在所示的實施例中，噴淋頭453可分配(透過通孔456)製程氣體(其含有氧、氫、及(或)氮)，及(或)藉由腔室電漿區域420中之電漿激發此等製程氣體的電漿排放物。在實施例中，在RPS410及(或)腔室電漿區域420中激發的製程氣體包括氨(NH3)、氫(H2)及氮(N2。一般而言，經由第一通道412引入RPS 410及(或)腔室電漿區域420的製程氣體可含有氧(O2)、臭氧(O3)、N2O、NO、NO2、NH3、NxHy(包括N2H4)、矽烷、二矽烷、TSA及DSA中的一或多者。製程氣體也可包括諸如氦、氬、氮(N2)等的載氣。第二通道413也可傳遞製程氣體及(或)載氣，及(或)用來自生長中或經沉積薄膜移除不需要成分的薄膜固化氣體。電漿排放物可包括製程氣體的離子化或中性衍生物，且其在本文中亦稱為氧自由基前驅物及(或)氮自由基前驅物，代表引入之製程氣體的原子組成。
在實施例中，通孔456的數量可介於約60個至約2000個之間。通孔456可具有各種形狀，但最容易製成圓形。在所揭示的實施例中，通孔456的最小直徑450可介於約0.5mm至約20mm之間，或介於約1mm至約6mm之間。亦可自由選擇通孔的截面形狀，其可為圓錐形、圓柱形或這兩種形狀的結合。在不同實施例中，用來將氣體引入基材處理區域470之小孔455的數量可介於約100個至約5000個之間，或約500個至約2000個之間。小孔455的直徑可介於約0.1mm至約2mm之間。
第4B圖為根據所揭示實施例之用於處理腔室之噴淋頭453的底部視圖。噴淋頭453對應於第4A圖的噴淋頭。通孔456繪示為在噴淋頭453的底部具有較大的內直徑(ID)，而在頂部有較小的ID。小孔455係實質均勻地分佈在噴淋頭的表面，相較於本文所述的其他實施例，均勻分配的通孔456有助於提供更均勻的混合。
當通過噴淋頭453中之通孔456的電漿排放物結合通過小孔455(源自中空體積451)的含矽前驅物時，在基材處理區域470內藉由臺座(未圖示)支撐的基材上產生一範例薄膜。儘管基材處理區域470可經裝配以支援其他製程(例如固化)的電漿，但在範例薄膜的生長期間沒有電漿存在。
可在噴淋頭453上方的腔室電漿區域420或噴淋頭453下方的基材處理區域470中點燃電漿。在腔室電漿區域420中存有電漿以從含氮及氫氣體的進流(inflow)生產氮自由基前驅物。在處理腔室的導電頂部421與噴淋頭453之間施加通常於射頻(RF)範圍內的AC電壓，以在沉積期間點燃腔室電漿區域420中的電漿。RF功率供應器產生13.56MHz的高RF頻率，但也可單獨產生其他頻率或結合13.56MHz頻率。
當啟動基材處理區域470中的底部電漿以固化薄膜或清潔圍繞基材處理區域470之內表面時，頂部電漿可維持在低功率或零功率。基材處理區域470中的電漿是藉由在噴淋頭453與腔室的臺座或底部之間施加AC電壓而點燃。當電漿存在時，可引入清潔氣體至基材處理區域470中。
臺座可具有熱交換通道，熱交換流體流過熱交換通道以控制基材的溫度。此配置允許基材溫度得以冷卻或加熱以維持相對的低溫(從室溫至約120℃)。熱交換流體可包含乙二醇與水。臺座的晶圓支撐圓盤(較佳為鋁、陶瓷、及其組合)也可經電阻加熱(使用經配置以製造兩個完整線圈之平行同心圓的經嵌入之單迴路嵌入式加熱元件)，以達到相對高的溫度(從約120℃至約1100℃)。加熱元件的外部可鄰近於支撐圓盤的周長行進，同時內部在具有較小半徑的同心圓路徑上行進。加熱元件的線路通過臺座的主幹。
基材處理系統受到系統控制器的控制。在一範例實施例中，系統控制器包括硬碟機、軟碟機及處理器。處理器含有單板電腦(SBC)、類比及數位輸入/輸出板、介面板及步進馬達控制器板。CVD系統的各種部件共同形成Versa Module European(VME)標準，其界定板、卡籠、以及連接器的尺寸及類型。VME標準也界定匯流排結構為具有16位元的資料匯流排及24位元的位址匯流排。
系統控制器控制所有CVD機器的活動。系統控制器執行系統控制軟體(其為儲存在電腦可讀媒體中的電腦程式)。較佳地，媒體為硬碟機，但媒體亦可為其他種類的記憶體。電腦程式包括一套可支配時序、氣體混合、腔室壓力、腔室溫度、RF功率位準、基座位置以及特定製程之其他參數的指令。儲存在其他記憶體裝置(包括諸如軟碟或其他適合的驅動)的其他電腦程式也可用於指示系統控制器。
在基材上沉積薄膜堆疊的製程或用於清潔腔室的製程可使用電腦程式產品來實施，而電腦程式產品係藉由系統控制器來執行。電腦程式編碼可以任何習知的電腦可讀程式語言寫入，電腦程式語言包括：例如，68000組合語言、C、C++、Pascal、Fortran或其他程式語言。使用習知的文字編輯器將適當的程式編碼輸入至單一檔案中、或多個檔案中，並將程式編碼儲存於或嵌入至電腦可用媒體中(例如電腦的記憶體系統)。若以高階語言輸入編碼文字，編碼係經編譯，且隨後最終編譯碼經連結至Microsoft Windows常式庫預先編譯的目標編碼。為了運作經連結、經編譯的目標編碼，系統使用者啟用目標編碼，致使電腦系統寫入記憶體中的編碼。隨後，CPU讀取並執行編碼以實行程式中識別的任務。
使用者和控制者之間的介面係透過平板觸摸感應監視器。在較佳實施例中使用兩個監視器，一個安裝在清潔的室壁上以供操作者使用，及另一個安裝在壁後方以供服務技術使用。兩個監視器可同時顯示相同資訊，其中一次僅一個監視器接受輸入。為了選擇適當的螢幕或功能，操作者觸摸該觸摸感應監視器的指定區域。觸摸區域改變其顯目色彩，或顯示新的選單或螢幕，確認操作者與觸摸感應監視器之間的通訊。可使用諸如鍵盤、滑鼠的其他裝置、或其他指向或通訊裝置來取代或添加至觸摸感應監視器，以允許使用者與系統控制器通訊。
本文所使用的「基材」可為具有或不具有多層形成於其上的支撐基材。支撐基材可為絕緣體或各種摻雜濃度及分佈的半導體，且(例如)可為使用在積體電路製造中之類型的半導體基材。「氧化矽」層可包括其他元素組成(例如氮、氫、碳等)的少量濃度。處於「激發態」的氣體描述至少一部分氣體分子處於振動激發、解離及(或)離子化狀態的氣體。氣體可為二或多個氣體(或前驅物)的組合。全文中使用的術語「溝槽」並未暗示經蝕刻的幾何結構具有大的水平深寬比。從上方表面觀之，溝槽可顯示為圓形、卵形、多角形、矩形、或各種其他形狀。術語「介層孔」代表低高寬比溝槽，其可經填充或不填充金屬以形成垂直電連接。術語「前驅物」用來表示任何參與反應以自表面移除材料或沉積材料的製程氣體。
在描述了數個實施例之後，應瞭解此領域中具有通常知識者可在不背離本發明之精神的情況下使用各種修改、替代結構及等效物。此外，為了不非必要的混淆本發明，並未描述一些習知製程及元件。因此，上文的描述不應視為對本發明範疇的限制。
除非文中有明確的相反指示，當提供一個範圍的數值時，應瞭解此範圍上限與下限之間的各個中間值(至最小單位的十分之一)亦明確地揭露。涵蓋在任何設定值之間的各個小範圍或設定範圍的中間值以及任何其他設定或在設定範圍的中間值。這些小範圍的上限與下限可獨立地被包括在範圍中或被排除，且本發明亦涵蓋小範圍中包括一個上下限、皆不包含上下限、皆包含上下限的各個範圍，除了在設定範圍中特別排除的限制。當設定範圍包括上下限之一或兩者，亦包括排除那些包括上下限之一或兩者的範圍。
本文及隨附申請專利範圍所使用的單數形式「一(a)」、「一(an)」及「該(the)」包括複數個指示對象，除非文中另有明確相反指示。因此，舉例而言，「一製程」的用語包括複數個此等製程，以及「該前驅物」的用語包括一或多個前驅物及熟習此技藝之人士所知悉的等效物等。
同理，在說明書中及後文申請專利範圍使用的用語「包含(comprise)」、「包含(comprising)」、「包括(include)」、「包括(including)」及「包括(includes)」意欲界定所述特徵結構、整數、部件、或步驟的存在，而非排除一或多個其他特徵結構、整數、部件、步驟、動作或群組的存在與添加。
100．．．方法
102．．．操作
104．．．操作
106．．．操作
108．．．操作
110．．．操作
200．．．方法
202．．．操作
204．．．操作
206．．．操作
208．．．操作
210．．．操作
300．．．系統
302．．．FOUP
304．．．機械臂
306．．．固持區
308a-f．．．處理腔室
310．．．第二機械臂
400．．．基材處理腔室
410．．．遠端電漿系統
411．．．氣體入口組件
412．．．第一通道
413．．．第二通道
420．．．腔室電漿區域
421．．．頂蓋
424．．．絕緣環
426．．．長度
450．．．最小直徑
451．．．中空體積
453．．．穿孔隔板/噴淋頭
455．．．小孔
456．．．通孔
470．．．基材處理區域
可藉由參照說明書的其餘部分及圖式以更進一步瞭解本發明的特性與優勢，其中在圖式中使用相似參考元件符號來表示相似的部件。在一些情況中，子標籤(sublabel)與參考元件符號相關連且接續一連號以表示為多個相似部件其中之一。當參照一參考元件符號而未指定子標籤，意欲表示所有此等多個相似部件。
第1圖為根據本發明實施例例示製造氧化矽薄膜之選擇步驟的流程圖。
第2圖為根據本發明實施例例示用於在基材間隙中形成氧化矽薄膜之選擇步驟的另一流程圖。
第3圖為根據本發明實施例之基材處理系統的示意圖。
第4A圖為根據本發明實施例之基材處理腔室的示意圖。
第4B圖為根據本發明實施例之基材處理腔室之噴淋頭的示意圖。
100．．．方法
101．．．操作
102．．．操作
104．．．操作
106．．．操作
108．．．操作
110．．．操作

Claims (15)

  1. 一種在一基材上形成一可流動介電層的方法，該方法包含以下步驟：藉由將該基材暴露至一含矽襯墊前驅物及一含氧襯墊前驅物以在該基材的氮化矽上形成一大體上共形之氧化矽襯墊層，其中該基材係維持在一襯墊沉積溫度；使用自由基組成化學氣相沉積在該氧化矽襯墊層上形成一不含碳之可流動含矽-氮及氫層，其中該基材係維持在一整體沉積溫度，其中該整體沉積溫度小於120℃；在低於或約400℃之基材溫度於一含臭氧大氣中固化該基材；以及在一含氧大氣中將該基材的溫度提昇至高於或約600℃的氧退火溫度。
  2. 如申請專利範圍第1項之方法，其中形成該不含碳之可流動含矽-氮及氫層的步驟包含以下步驟：流動一含氮及氫氣體至一電漿區域中，以產生一氮自由基前驅物；在一無電漿基材處理區域中將一不含碳之含矽前驅物結合該氮自由基前驅物；以及在該基材上沉積一含矽及氮層。
  3. 如申請專利範圍第2項之方法，其中該含氮及氫氣體 包含氨(NH3)。
  4. 如申請專利範圍第2項之方法，其中該含氮及氫氣體包含下列至少一者：氮(N2)、氫(H2)、聯胺(N2H4)及氨(NH3)。
  5. 如申請專利範圍第1項之方法，其中該大體上共形之氧化矽襯墊的厚度係小於或約100埃。
  6. 如申請專利範圍第2項之方法，其中該不含碳之含矽前驅物包含N(SiH3)3。
  7. 如申請專利範圍第1項之方法，其中該不含碳之可流動含矽-氮及氫層包含一不含碳之Si-N-H層。
  8. 如申請專利範圍第1項之方法，其中該整體沉積溫度係低於該襯墊沉積溫度。
  9. 如申請專利範圍第1項之方法，其中該襯墊沉積溫度大於400℃。
  10. 如申請專利範圍第1項之方法，其中該含氧大氣包含一或多個選自以下群組所構成的氣體：氧原子、臭氧、及水蒸氣(H2O)。
  11. 如申請專利範圍第2項之方法，其中該電漿區域係位於一遠端電漿系統中。
  12. 如申請專利範圍第2項之方法，其中該電漿區域係為一基材處理腔室的一隔間部分，其係藉由一噴淋頭從該無電漿基材處理區域分隔出。
  13. 如申請專利範圍第1項之方法，其中該含氧襯墊前驅物包含臭氧。
  14. 如申請專利範圍第1項之方法，其中該含氧襯墊前驅物包含氧(O2)。
  15. 如申請專利範圍第1項之方法，其中該含矽襯墊前驅物包含TEOS。
TW099145306A 2010-01-06 2010-12-22 形成使用氧化物襯墊的可流動介電質之方法 TWI544548B (zh)

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