TW201843849A - Thermoelectric conversion module and method for manufacturing same - Google Patents

Thermoelectric conversion module and method for manufacturing same Download PDF

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TW201843849A
TW201843849A TW107107565A TW107107565A TW201843849A TW 201843849 A TW201843849 A TW 201843849A TW 107107565 A TW107107565 A TW 107107565A TW 107107565 A TW107107565 A TW 107107565A TW 201843849 A TW201843849 A TW 201843849A
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thermoelectric conversion
conversion element
wiring
type thermoelectric
layer
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TW107107565A
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TWI758431B (en
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新井皓也
駒崎雅人
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日商三菱綜合材料股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions

Abstract

A thermoelectric conversion module has: a plurality of thermoelectric conversion elements comprising a P-type thermoelectric conversion element and an N-type thermoelectric conversion element having differing linear expansion coefficients; and a first wiring substrate arranged at one end side of the plurality of thermoelectric conversion elements, the first wiring substrate having a first wiring layer in which the adjacent P-type thermoelectric conversion element and N-type thermoelectric conversion element are joined, and first ceramic layers in which the P-type thermoelectric conversion elements and the N-type thermoelectric conversion elements of the first wiring layer are joined to the opposite surface and multiply separated, each first ceramic layer being separated from the P-type thermoelectric conversion element or the N-type thermoelectric conversion element.

Description

熱電轉換模組及其製造方法Thermoelectric conversion module and manufacturing method thereof

本發明係關於串聯配列P型熱電轉換元件和N型熱電轉換元件的熱電轉換模組及其製造方法。The invention relates to a thermoelectric conversion module in which P-type thermoelectric conversion elements and N-type thermoelectric conversion elements are arranged in series and a manufacturing method thereof.

本案係根據2017年3月8日在日本申請的特願2017-43487號及2017年8月28日在日本申請的特願2017-163484號主張優先權，將該些內容援用於此。This case claims priority based on Japanese Patent Application No. 2017-43487 filed in Japan on March 8, 2017 and Japanese Patent Application No. 2017-163484 filed in Japan on August 28, 2017, and the contents are incorporated herein.

熱電轉換模組一般被設成在一組配線基板(絕緣基板)之間，以依P型、N型、P型、N型之順序交互配置一對P型熱電轉換元件和N型熱電轉換元件之方式，電性串聯連接的構成。熱電轉換模組係將配線之兩端連接於直流電源，藉由帕耳帖效應(Peltier effect)，在各熱電轉換元件中使熱移動(在P型朝與電流相同方向，在N型朝與電流相反方向移動)，或是對兩配線基板間賦予溫度差而使各熱電轉換元件藉由席貝克效應(Seebeck effect)產生電動勢，能夠作為冷卻、加熱或發電的利用。The thermoelectric conversion module is generally set between a group of wiring substrates (insulating substrates), and a pair of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements are alternately arranged in the order of P-type, N-type, P-type, and N-type. In this way, the structure is electrically connected in series. The thermoelectric conversion module connects the two ends of the wiring to a DC power supply, and uses the Peltier effect to move heat in each thermoelectric conversion element (in the same direction as the current in the P type, and in the N type toward the The current moves in the opposite direction), or a temperature difference is provided between the two wiring substrates, so that each thermoelectric conversion element generates an electromotive force by the Seebeck effect, which can be used for cooling, heating, or power generation.

在熱電轉換模組中，由於越成為高溫作動，效率越高，故開發出很多高溫型之熱電轉換模組。在中高溫(300℃)以上被使用的熱電轉換模組中，因絕緣基板之材料無法使用樹脂，故通常進行將陶瓷使用於絕緣基板。In the thermoelectric conversion module, since the higher the temperature becomes, the higher the efficiency becomes, so many high-temperature thermoelectric conversion modules have been developed. In thermoelectric conversion modules used at medium and high temperature (300 ° C) or higher, resin cannot be used as the material of the insulating substrate, so ceramics are usually used for the insulating substrate.

在陶瓷之中，例如氮化鋁般，存在兼顧絕緣性和熱傳導性。但是，因陶瓷既係堅硬且剛性高之材料，故作為剛體，將熱電轉換元件間之線膨脹差改變成熱應力。即是，在P型熱電轉換元件和N型熱電轉換元件之兩熱電轉換元件之熱電轉換材料，使用線膨脹係數不同之材料之情況，當在熱源設置熱電轉換模組時，由於兩熱電轉換元件藉由陶瓷基板被拘束，使得無法追隨各形狀變化。因此，在線膨脹係數大的熱電轉換元件產生壓縮應力，在線膨脹係數小之熱電轉換元件產生拉伸應力。Among ceramics, such as aluminum nitride, there is a balance between insulation and thermal conductivity. However, since ceramics are both hard and highly rigid materials, as a rigid body, the linear expansion difference between thermoelectric conversion elements is changed to thermal stress. That is, when the thermoelectric conversion materials of the two thermoelectric conversion elements of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element use materials with different linear expansion coefficients, when the thermoelectric conversion module is installed in the heat source, the two thermoelectric conversion elements The restraint of the ceramic substrate makes it impossible to follow changes in shape. Therefore, a thermoelectric conversion element having a large linear expansion coefficient generates compressive stress, and a thermoelectric conversion element having a small linear expansion coefficient generates tensile stress.

在藉由熱伸縮差，產生熱應力之情況，有熱電轉換元件從配線基板之配線部剝離，或在熱電轉換元件產生裂紋之情況。在此情況，有時而電流不流通，時而電傳導度下降而使得熱電轉換模組無法動作，或就算無達到無法動作發電量也大幅度下降之虞。When the thermal stress is generated due to the thermal expansion difference, the thermoelectric conversion element may be peeled from the wiring portion of the wiring substrate, or the thermoelectric conversion element may be cracked. In this case, sometimes the current does not flow, and sometimes the electrical conductivity decreases to make the thermoelectric conversion module inoperable, or even if the inoperability is not reached, the power generation amount may be greatly reduced.

於是，在例如專利文獻1～3中，藉由連接複數熱電轉換元件(熱電半導體材料、熱電轉換半導體)之配線(電極)，使用所謂的發泡金屬(多孔性金屬材料、多孔質金屬構件)，或金屬纖維之集合體，對配線賦予柔軟性，進行嘗試緩和熱伸縮差所致的熱應力。 [先前技術文獻] [專利文獻]Therefore, for example, in Patent Documents 1 to 3, so-called foamed metals (porous metal materials, porous metal members) are used by wirings (electrodes) connecting a plurality of thermoelectric conversion elements (thermoelectric semiconductor materials, thermoelectric conversion semiconductors). Or an assembly of metal fibers, to give flexibility to the wiring, and try to reduce thermal stress caused by poor thermal expansion. [Prior Art Literature] [Patent Literature]

[專利文獻1] 日本特開2007-103580號公報 　　[專利文獻2] 國際公開第2010/010783號 　　[專利文獻3] 日本專利第5703871號公報[Patent Document 1] Japanese Patent Laid-Open No. 2007-103580 [Patent Document 2] International Publication No. 2010/010783 [Patent Document 3] Japanese Patent No. 5703871

[發明所欲解決之課題][Problems to be Solved by the Invention]

在專利文獻1～3中，配線使用發泡金屬或金屬纖維之集合體，成為在該些構件本身流通電流之構成。因此，配線之內部電阻(熱電阻及電阻)大幅度上升，有使熱電轉換模組之輸出大幅度下降之虞。In Patent Documents 1 to 3, an assembly of foamed metal or metal fiber is used for wiring, and a structure in which an electric current flows through these members themselves. Therefore, the internal resistance (thermal resistance and resistance) of the wiring is greatly increased, and the output of the thermoelectric conversion module may be significantly reduced.

本發明係鑑於如此之情形而創作出，其目的在於提供可以防止熱電轉換元件之熱伸縮差所致的破壞，接合可靠性、熱傳導性及導電性優良的熱電轉換模組及其製造方法。 [用以解決課題之手段]The present invention has been made in view of such circumstances, and an object thereof is to provide a thermoelectric conversion module capable of preventing damage caused by a thermal expansion difference of a thermoelectric conversion element, and having excellent joint reliability, thermal conductivity, and electrical conductivity, and a method for manufacturing the same. [Means to solve the problem]

本發明之熱電轉換模組具有：複數熱電轉換元件，其係由線膨脹係數不同之P型熱電轉換元件和N型熱電轉換元件所構成；和第1配線基板，其係被配設在複數上述熱電轉換元件之一端側，上述第1配線基板具有：第1配線層，其係接合有相鄰的上述P型熱電轉換元件和上述N型熱電轉換元件；和第1陶瓷層，其係被接合於與該第1配線層之上述P型熱電轉換元件和上述N型熱電轉換元件之接合面相反之面，且被分離成複數，各第1陶瓷層在任一的上述P型熱電轉換元件和上述N型熱電轉換元件之間分離。The thermoelectric conversion module of the present invention includes: a plurality of thermoelectric conversion elements, which are composed of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements having different linear expansion coefficients; and a first wiring substrate, which is arranged at a plurality of the above. On one end side of the thermoelectric conversion element, the first wiring substrate includes: a first wiring layer to which the P-type thermoelectric conversion element and the N-type thermoelectric conversion element adjacent to each other are bonded; and a first ceramic layer to be bonded The first ceramic layer is separated from the plurality of P-type thermoelectric conversion elements and the N-type thermoelectric conversion element on the side opposite to the joint surface of the first wiring layer, and each of the first ceramic layers is in any one of the P-type thermoelectric conversion element and the above-mentioned N-type thermoelectric conversion elements are separated.

在複數熱電轉換元件之一端側被接合的第1配線基板中，與構成該第1配線基板之第1配線層相鄰的P型熱電轉換元件和N型熱電轉換元件被接合，該些P型熱電轉換元件和N型熱電轉換元件之間藉由第1配線層被電性連接。另外，被接合於第1配線層之各第1陶瓷層係在設置複數熱電轉換元件之中，任一的P型熱電轉換元件和N型熱電轉換元件之間被分離，且設置複數。In a first wiring substrate to which one end side of a plurality of thermoelectric conversion elements is bonded, a P-type thermoelectric conversion element and an N-type thermoelectric conversion element adjacent to a first wiring layer constituting the first wiring substrate are bonded, and these P-type The thermoelectric conversion element and the N-type thermoelectric conversion element are electrically connected through a first wiring layer. Each of the first ceramic layers bonded to the first wiring layer is provided with a plurality of thermoelectric conversion elements, and any one of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element is separated from each other, and a plurality of the thermoelectric conversion elements are provided.

如此一來，剛體之第1陶瓷層因在任一的P型熱電轉換元件和N型熱電轉換元件之間被分斷，且設置複數，故在該些P型熱電轉換元件和N型熱電轉換元件之間，彼此藉由對方側之第1陶瓷層，無隨著熱伸縮的變形被拘束之情形。因此，可以抑制藉由各熱電轉換元件之熱伸縮差而產生在各熱電轉換元件內之熱應力的發生，可以防止時而各熱電轉換元件從第1配線基板(第1配線層)剝離，時而在各熱電轉換元件產生裂紋的情形。因此，可以良好地維持第1配線層被連接之兩熱電轉換元件間之電性連接，且可以良好地維持熱電轉換模組之接合可靠性、熱傳導性及導電性。In this way, the first ceramic layer of the rigid body is divided between any P-type thermoelectric conversion element and the N-type thermoelectric conversion element, and plural numbers are provided. Therefore, the P-type thermoelectric conversion element and the N-type thermoelectric conversion element are provided. Between them, the first ceramic layer on the opposite side does not restrict the deformation due to thermal expansion. Therefore, the occurrence of thermal stress in each thermoelectric conversion element due to the thermal expansion and contraction difference of each thermoelectric conversion element can be suppressed, and each thermoelectric conversion element can be prevented from being peeled off from the first wiring substrate (first wiring layer). In the case where cracks occur in each thermoelectric conversion element. Therefore, the electrical connection between the two thermoelectric conversion elements to which the first wiring layer is connected can be maintained well, and the junction reliability, thermal conductivity, and electrical conductivity of the thermoelectric conversion module can be well maintained.

再者，在第1配線基板設置有第1陶瓷層。因此，於在熱源等設置熱電轉換模組之時，可以藉由第1陶瓷層，防止熱源等和第1配線層接觸之情形。因此，可以確實地迴避熱源等和第1配線層之電性連接(洩漏)，且可以良好地維持絕緣狀態。另外，各熱轉換元件因電壓低，若絕緣基板亦即第1陶瓷層在相鄰的P型熱電轉換元件和N型熱電轉換元件分離時，就算在第1配線層之全面無接合各第1陶瓷層，只要在第1配線層無物理性地接觸到熱源等，就不會產生電性洩漏。The first ceramic layer is provided on the first wiring substrate. Therefore, when a thermoelectric conversion module is provided in a heat source or the like, the first ceramic layer can prevent the heat source or the like from coming into contact with the first wiring layer. Therefore, the electrical connection (leak) between the heat source and the first wiring layer can be reliably avoided, and the insulation state can be maintained well. In addition, due to the low voltage of each thermal conversion element, if the insulating substrate, that is, the first ceramic layer is separated from the adjacent P-type thermoelectric conversion element and the N-type thermoelectric conversion element, even if the first wiring layer is completely unbonded, each first As long as the ceramic layer does not physically contact the heat source or the like in the first wiring layer, electrical leakage does not occur.

作為本發明之熱電轉換模組之較佳實施態樣，以上述第1配線層跨越上述第1陶瓷層彼此之間而被形成為佳。As a preferred embodiment of the thermoelectric conversion module of the present invention, it is preferable that the first wiring layer is formed across the first ceramic layers.

在此情況，相鄰的P型熱電轉換元件和N型熱電轉換元件之熱伸縮差，可以使連接熱電轉換元件之間的第1配線層之連接部分變形而吸收尺寸變化。因此，可以抑制藉由各熱電轉換元件之熱伸縮差而產生在各熱電轉換元件內之熱應力的發生。In this case, the thermal expansion difference between the adjacent P-type thermoelectric conversion elements and the N-type thermoelectric conversion elements can deform the connection portion of the first wiring layer connecting the thermoelectric conversion elements and absorb the dimensional change. Therefore, the occurrence of thermal stress in each thermoelectric conversion element due to the thermal expansion difference of each thermoelectric conversion element can be suppressed.

作為本發明之熱電轉換模組之較佳實施態樣，以上述第1陶瓷層獨立形成在每個上述熱電轉換元件為佳。As a preferred embodiment of the thermoelectric conversion module of the present invention, it is preferable that the first ceramic layer is independently formed on each of the thermoelectric conversion elements.

在此情況，構成第1配線基板之複數第1陶瓷層被獨立形成在被配設複數的每個熱電轉換元件獨立形成，剛體之各第1陶瓷層在各熱電轉換元件之間被分離。因此，各熱電轉換元件藉由各第1陶瓷層無隨著熱伸縮的變形被拘束之情形。再者，相鄰的P型熱電轉換元件和N型熱電轉換元件之熱伸縮差，可以使連接兩熱電轉換元件之間的第1配線層之連接部分變形而吸收尺寸變化。因此，藉由可以抑制藉由熱伸縮差而產生在各熱電轉換元件內之熱應力的發生。In this case, the plurality of first ceramic layers constituting the first wiring substrate are independently formed on each of the thermoelectric conversion elements to which a plurality of the plurality of thermoelectric conversion elements are arranged, and the first ceramic layers of the rigid body are separated between the respective thermoelectric conversion elements. Therefore, each of the thermoelectric conversion elements is not restricted by the deformation of the first ceramic layer due to thermal expansion and contraction. Furthermore, the difference in thermal expansion and contraction between adjacent P-type thermoelectric conversion elements and N-type thermoelectric conversion elements can deform the connection portion of the first wiring layer connecting the two thermoelectric conversion elements to absorb dimensional changes. Therefore, the occurrence of thermal stress in each thermoelectric conversion element due to the difference in thermal expansion and contraction can be suppressed.

作為本發明之熱電轉換模組之較佳實施態樣，以上述第1配線層為銀、鋁、銅或鎳為佳。銀、鋁、銅或鎳包含以該些為主成分之合金。理想上，以上述第1配線層為純度99.99質量%以上之鋁，或純度99.9質量%以上之銅為佳。As a preferred embodiment of the thermoelectric conversion module of the present invention, the first wiring layer is preferably silver, aluminum, copper, or nickel. Silver, aluminum, copper or nickel contains alloys based on these. Ideally, the first wiring layer is preferably aluminum having a purity of 99.99% by mass or more, or copper having a purity of 99.9% by mass or more.

高純度之鋁(Al)或銅(Cu)容易彈性變形、塑性變形。再者，鋁或銅之熱傳導性或導電性優。因此，藉由第1配線層使用純度高之純鋁或純銅等之軟的材料，可以使第1配線層隨著各熱電轉換元件之熱伸縮而容易變形且追隨。因此，可以更提高各熱電轉換元件之熱伸縮差所致的熱應力之緩和效果。再者，因鋁或銅較銀便宜，故可以便宜地製造熱電轉換模組。再者，藉由鋁或銅形成第1配線層，可以良好地維持藉由第1配線層被連接之兩熱電轉換元件間之熱傳導性或導電性。High-purity aluminum (Al) or copper (Cu) is easily deformed elastically and plastically. Furthermore, aluminum or copper has excellent thermal or electrical conductivity. Therefore, by using a soft material such as pure aluminum or pure copper with high purity as the first wiring layer, the first wiring layer can be easily deformed and followed by the thermal expansion and contraction of each thermoelectric conversion element. Therefore, it is possible to further improve the thermal stress relaxation effect caused by the thermal expansion difference of each thermoelectric conversion element. Furthermore, since aluminum or copper is cheaper than silver, a thermoelectric conversion module can be manufactured inexpensively. Furthermore, by forming the first wiring layer with aluminum or copper, the thermal conductivity or electrical conductivity between the two thermoelectric conversion elements connected through the first wiring layer can be maintained well.

藉由以銀(Ag)形成第1配線層，例如在熱電轉換模組之高溫側配置具有第1配線層之第1配線基板之情況，可以時而提升耐熱性或耐氧化性，時而良好地維持熱傳導性或導電性。By forming the first wiring layer with silver (Ag), for example, when the first wiring substrate having the first wiring layer is disposed on the high temperature side of the thermoelectric conversion module, heat resistance or oxidation resistance can be improved from time to time, and sometimes it is good. Ground to maintain thermal or electrical conductivity.

與鋁或銀相比，雖然鎳(Ni)之耐氧化性差，但是具有比較良好的耐熱性。再者，鎳比銀便宜，並且元件接合性比較好。因此，藉由以鎳形成第1配線層，可以構成性能和價格的平衡比較優的熱電轉換模組。Compared with aluminum or silver, nickel (Ni) has a lower oxidation resistance, but has better heat resistance. Furthermore, nickel is cheaper than silver, and element bonding is better. Therefore, by forming the first wiring layer with nickel, a thermoelectric conversion module having a good balance between performance and price can be configured.

作為本發明之熱電轉換模組之較佳實施型態，以上述第1配線基板具有複數上述第1配線層，和被接合於與上述第1陶瓷層之上述第1配線層之接合面相反之面之第1熱傳達金屬層，上述第1熱傳達金屬層係跨越相鄰之兩第1配線層之間而被形成，並且跨越相鄰的兩第1陶瓷層之間而被形成為佳。As a preferred embodiment of the thermoelectric conversion module of the present invention, the first wiring substrate has a plurality of the first wiring layers, and is opposite to a bonding surface of the first wiring layer that is bonded to the first ceramic layer. The first heat transfer metal layer on the surface is preferably formed across two adjacent first wiring layers, and is preferably formed across two adjacent first ceramic layers.

因即使在具有複數第1配線層之第1配線基板，亦藉由第1熱傳達金屬層，連接各第1陶瓷層之間，故可以一體地處理各第1配線層，提升第1配線基板之處理性。再者，因各第1陶瓷層之間，僅藉由第1配線層或第1熱傳達金屬層中之任一者而被連結，故第1配線層和第1熱傳達金屬層容易隨著各熱電轉換元件之熱伸縮而變形且追隨。因此，可以抑制藉由各熱電轉換元件之熱伸縮差而產生在各熱電轉換元件內之熱應力的發生，可以防止時而各熱電轉換元件從第1配線基板(第1配線層)剝離，時而在各熱電轉換元件產生裂紋的情形。Since even the first wiring substrate having a plurality of first wiring layers is connected to each of the first ceramic layers by the first heat-transmitting metal layer, each first wiring layer can be processed integrally to improve the first wiring substrate. Its handling. Furthermore, since the first ceramic layers are connected only by either the first wiring layer or the first heat-transmitting metal layer, the first wiring layer and the first heat-transmitting metal layer easily follow each other. The thermal expansion and contraction of each thermoelectric conversion element deforms and follows. Therefore, the occurrence of thermal stress in each thermoelectric conversion element due to the thermal expansion and contraction difference of each thermoelectric conversion element can be suppressed, and each thermoelectric conversion element can be prevented from being peeled off from the first wiring substrate (first wiring layer). In the case where cracks occur in each thermoelectric conversion element.

再者，藉由在第1配線基板設置第1熱傳達金屬層，在熱源等設置熱電轉換模組之時，藉由第1熱傳達金屬層可以提高熱源等和熱電轉換模組之密接性，可以提升熱導導性。因此，可以提升熱電轉換模組之熱電轉換性能(發電效率)。Furthermore, by providing a first heat transfer metal layer on the first wiring substrate, and when a thermoelectric conversion module is provided on a heat source, the first heat transfer metal layer can improve the adhesion between the heat source and the thermoelectric conversion module. Can improve thermal conductivity. Therefore, the thermoelectric conversion performance (power generation efficiency) of the thermoelectric conversion module can be improved.

作為本發明之熱電轉換模組之較佳實施態樣，上述第1熱傳達金屬層被設成鋁或銅，理想上，以設成純度99.99質量%以上之鋁，或純度99.9質量%以上之銅為佳。As a preferred embodiment of the thermoelectric conversion module of the present invention, the above-mentioned first heat transfer metal layer is provided as aluminum or copper, and ideally, it is provided as aluminum having a purity of 99.99% by mass or more, or a purity of 99.9% by mass or more. Copper is preferred.

藉由第1熱傳達金屬層也與第1配線層同樣使用純度高之純鋁或純銅等之軟的材料，可以使第1熱傳達金屬層隨著各熱電轉換元件之熱伸縮而容易變形且追隨。因此，可以更提高各熱電轉換元件之熱伸縮差所致的熱應力之緩和效果。再者，藉由鋁或銅形成第1熱傳達金屬層，可以良好地維持熱電轉換模組和熱源等之間的熱傳導性，亦可以良好地維持熱電轉換性能。As the first heat transfer metal layer is made of a soft material such as pure aluminum or pure copper, as in the first wiring layer, the first heat transfer metal layer can be easily deformed with the thermal expansion and contraction of each thermoelectric conversion element. follow. Therefore, it is possible to further improve the thermal stress relaxation effect caused by the thermal expansion difference of each thermoelectric conversion element. Furthermore, by forming the first heat transfer metal layer with aluminum or copper, the thermal conductivity between the thermoelectric conversion module and the heat source can be maintained well, and the thermoelectric conversion performance can also be maintained well.

作為本發明之熱電轉換模組之較佳實施態樣，以具有被配設在上述熱電轉換元件之另一端側的第2配線基板，經由被相向配置之上述第1配線基板和上述第2配線基板而電性串聯連接上述P型熱電轉換元件和上述N型熱電轉換元件即可。As a preferred embodiment of the thermoelectric conversion module of the present invention, a second wiring substrate provided on the other end side of the thermoelectric conversion element is provided, and the first wiring substrate and the second wiring are arranged opposite to each other. The substrate may be electrically connected in series with the P-type thermoelectric conversion element and the N-type thermoelectric conversion element in series.

被相向配置之第1配線基板和第2配線基板中，至少構成第1配線基板之第1陶瓷層在任一的P型熱電轉換元件和N型熱電轉換元件之間被分離。因此，在該些P型熱電轉換元件和N型熱電轉換元件之間，彼此藉由被連接於對方側之第1陶瓷層，無隨著熱伸縮的變形被拘束之情形。再者，該些的P型熱電轉換元件和N型熱電轉換元件之熱伸縮差，可以使連接兩熱電轉換元件之間的第1配線層或第1熱傳達金屬層之連接部分變形而吸收尺寸變化。因此，藉由抑制藉由各熱電轉換元件之熱伸縮差而產生在各熱電轉換元件內之熱應力的發生。因此，可以良好地維持藉由第1配線層被連接之兩熱電轉換元件間之電性連接，且可以良好地維持熱電轉換模組之接合可靠性、熱傳導性及導電性。Among the first wiring substrate and the second wiring substrate arranged to face each other, at least the first ceramic layer constituting the first wiring substrate is separated between any of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element. Therefore, between the P-type thermoelectric conversion elements and the N-type thermoelectric conversion elements, the first ceramic layer connected to the other side is not restricted by the deformation due to thermal expansion. Furthermore, the thermal expansion difference between these P-type thermoelectric conversion elements and N-type thermoelectric conversion elements can deform the first wiring layer or the first heat transfer metal layer connecting portion between the two thermoelectric conversion elements to absorb the size. Variety. Therefore, the occurrence of thermal stress in each thermoelectric conversion element due to the thermal expansion difference of each thermoelectric conversion element is suppressed. Therefore, the electrical connection between the two thermoelectric conversion elements connected through the first wiring layer can be maintained well, and the connection reliability, thermal conductivity, and electrical conductivity of the thermoelectric conversion module can be well maintained.

作為本發明之熱電轉換模組之較佳實施態樣，以上述第2配線基板具有：第2配線，其係接合有相鄰的上述P型熱電轉換元件和上述N型熱電轉換元件；和第2陶瓷層，其係被接合於與該第2配線層之上述P型熱電轉換元件和上述N型熱電轉換元件之接合面相反之面，且被分離成複數，各第2陶瓷層在任一的上述P型熱電轉換元件和上述N型熱電轉換元件之間分離為佳。As a preferred embodiment of the thermoelectric conversion module of the present invention, the above-mentioned second wiring substrate has: a second wiring that is connected to the adjacent P-type thermoelectric conversion element and the N-type thermoelectric conversion element; and 2 ceramic layers, which are bonded to a surface opposite to the bonding surface of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element of the second wiring layer, and are separated into a plurality of layers, and each of the second ceramic layers The P-type thermoelectric conversion element is preferably separated from the N-type thermoelectric conversion element.

以上述第2配線層跨越是數第2陶瓷層彼此之間而被形成為佳。以上述第2陶瓷層獨立形成在每個上述熱電轉換元件為佳。以上述第2配線層為銀、鋁、銅或鎳為佳。The second wiring layer is preferably formed so as to span between the second ceramic layers. It is preferable that the second ceramic layer is independently formed on each of the thermoelectric conversion elements. The second wiring layer is preferably silver, aluminum, copper, or nickel.

以上述第2配線基板具有複數上述第2配線層，和被接合於與上述第2陶瓷層之上述第2配線層之接合面相反之面之第2熱傳達金屬層，上述第2熱傳達金屬層係跨越相鄰之兩第2配線層之間而被形成，並且跨越相鄰的兩第2陶瓷層之間而被形成為佳。以上述第2熱傳達金屬層為鋁或銅為佳。The second wiring substrate includes a plurality of the second wiring layers, a second heat transfer metal layer bonded to a surface opposite to a bonding surface of the second wiring layer of the second ceramic layer, and the second heat transfer metal. The layer system is preferably formed across two adjacent second wiring layers, and is preferably formed across two adjacent second ceramic layers. The second heat transfer metal layer is preferably aluminum or copper.

即使在與第1配線基板相向配置之第2配線基板中，藉由跨越被分離成複數之第2陶瓷層彼此之間而形成接合相鄰的P型熱電轉換元件和N型熱電轉換元件之第2配線層，且先在P型熱電轉換元件和N型熱電轉換元件之間使各第2陶瓷層分離，在被接合於第2配線層之P型熱電轉換元件和N型電轉換元件之間，彼此藉由對方側之第2陶瓷層，無隨著熱伸縮的變形被拘束之情形。再者，因相鄰的P型熱電轉換元件和N型熱電轉換元件之熱伸縮差，因可以使連接兩熱電轉換元件之間的第2配線層之連接部分變形而吸收尺寸變化，故可以抑制藉由各熱電轉換元件之熱伸縮差而產生在各熱電轉換元件內之熱應力的發生。Even in the second wiring substrate arranged opposite to the first wiring substrate, the second ceramic layer separated by the plurality of second ceramic layers is formed to join the first P-type thermoelectric conversion element and the N-type thermoelectric conversion element that are adjacent to each other. 2 wiring layers, and separate each second ceramic layer between the P-type thermoelectric conversion element and the N-type thermoelectric conversion element, and between the P-type thermoelectric conversion element and the N-type electric conversion element bonded to the second wiring layer With the second ceramic layer on the opposite side of each other, the deformation due to thermal expansion and contraction is not restricted. Furthermore, the difference in thermal expansion between the adjacent P-type thermoelectric conversion elements and the N-type thermoelectric conversion elements can absorb the dimensional change by deforming the connection portion of the second wiring layer connecting the two thermoelectric conversion elements, so it can be suppressed. The occurrence of thermal stress in each thermoelectric conversion element is caused by the thermal expansion difference of each thermoelectric conversion element.

如此一來，因在被相向配置之第1配線基板和第2配線基板之雙方，可以吸收在各熱電轉換元件藉由熱伸縮差產生的尺寸變化，故可以良好地維持藉由第1配線層及第2配線層連接之兩熱電轉換元件間之電性連接，可以良好地維持熱電轉換模組之接合可靠性、熱傳導性及導電性。In this way, since both the first wiring substrate and the second wiring substrate that are oppositely arranged can absorb the dimensional change caused by the thermal expansion difference of each thermoelectric conversion element, the first wiring layer can be maintained well. The electrical connection between the two thermoelectric conversion elements connected to the second wiring layer can maintain the joint reliability, thermal conductivity and electrical conductivity of the thermoelectric conversion module well.

本發明之熱電轉換模組之製造方法具有：切割線形成工程，其係將用以從陶瓷母材分割複數第1陶瓷層之切割線形成在該陶瓷母材；金屬層形成工程，其係於上述切割線形成工程後，在上述陶瓷母材之一方之面，形成跨越藉由上述切割線被區劃的複數第1陶瓷層形成區域中之鄰接的兩第1陶瓷層形成區域的第1配線層；分割工程，其係於上述金屬層形成工程後，沿著上述切割線分割形成有上述第1配線層之上述陶瓷母材，形成接合有上述第1配線層和上述第1陶瓷層的第1配線基板；及接合工程，其係於上述分割工程後，在與上述第1配線層之各第1陶瓷層之接合面相反之面，接合線膨脹係數不同的P型熱電轉換元件和N型熱電轉換元件，製造串聯連接上述P型熱電轉換元件和上述N型熱電轉換元件之熱電轉換模組。The manufacturing method of the thermoelectric conversion module of the present invention includes: a cutting line forming process for forming a cutting line for dividing a plurality of first ceramic layers from a ceramic base material on the ceramic base material; and a metal layer forming process for the After the cutting line forming process, a first wiring layer is formed on one of the ceramic base materials to span two adjacent first ceramic layer forming regions in the plurality of first ceramic layer forming regions divided by the cutting line. ; A division process, which is after the metal layer forming process, dividing the ceramic base material on which the first wiring layer is formed along the cutting line to form a first joint where the first wiring layer and the first ceramic layer are joined; Wiring substrate; and a bonding process, which is after the above-mentioned division process, on a surface opposite to the bonding surface of each of the first ceramic layers of the first wiring layer, a P-type thermoelectric conversion element and an N-type thermoelectric element having different coefficients of expansion of the bonding wires are bonded. The conversion element is a thermoelectric conversion module in which the P-type thermoelectric conversion element and the N-type thermoelectric conversion element are connected in series.

在接合(搭載)多數上述熱電轉換元件的熱電轉換模組中，非常難以使各個第1陶瓷層整齊排列而接合於第1配線層。但是，如本發明之製造方法般，於將第1配線層接合於陶瓷母材之後，藉由沿著切割線分割陶瓷母材，可以形成具有容易配列在期望的圖案之第1配線層，和被個片化之第1陶瓷層的第1配線基板，可以圓滑地製造出熱電轉換模組。再者，因被個片化之複數陶瓷層之間，藉由第1配線層被連接，故可以一體地處理第1配線基板，可以提升處理性。In a thermoelectric conversion module in which a large number of the above-mentioned thermoelectric conversion elements are bonded (mounted), it is very difficult to arrange the first ceramic layers in order to bond them to the first wiring layer. However, after the first wiring layer is bonded to the ceramic base material as in the manufacturing method of the present invention, the first wiring layer having an easily arranged pattern can be formed by dividing the ceramic base material along the cutting line, and The first wiring substrate having the first ceramic layer formed in a single piece can smoothly produce a thermoelectric conversion module. In addition, since the plurality of ceramic layers that are singulated are connected by the first wiring layer, the first wiring substrate can be integrally processed, and handling properties can be improved.

作為本發明之熱電轉換模組之製造方法的較佳實施態樣，上述接合工程被設成先在被相向配置的一組加壓板之間，配置分別重疊上述第1配線基板之上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之挾持體，藉由在其疊層方向加壓該挾持體之狀態下加熱該挾持體，分別接合上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之工程，在上述接合工程中，以先在上述P型電轉換元件和上述N型熱電轉換元件之中，至少線膨脹係數小之一方之熱電轉換元件和上述加壓板之間，配置補足構件，先使在上述第1配線基板和上述P型熱電轉換元件及上述N型熱電轉換元件之接合時的上述一方之熱電轉換元件及上述補足構件之高度和上述另一方之熱電轉換元件及上述補足構件之高度的差，小於上述一方之熱電轉換元件之高度和上述另一方之熱電轉換元件之高度的差為佳。As a preferred embodiment of the method for manufacturing a thermoelectric conversion module according to the present invention, the above-mentioned joining process is set to firstly arrange the first first wiring substrate and the first first wiring substrate, respectively, between a set of pressure plates arranged opposite to each other. The wiring layer and the holding body of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element are heated by holding the holding body in a state where the holding body is pressed in the lamination direction, and the first wiring layer and the P are joined respectively. In the project of the thermoelectric conversion element of the type N and the thermoelectric conversion element of the N type, in the joining process, the thermoelectric conversion element having at least one of the linear expansion coefficient among the P type electric conversion element and the N type thermoelectric conversion element is first A supplementary member is arranged between the pressure plate and the first wiring substrate and the P-type thermoelectric conversion element and the N-type thermoelectric conversion element are connected to each other. The difference between the height of the thermoelectric conversion element of the other party and the complementary component is smaller than the height of the thermoelectric conversion element of the one party and the thermoelectric conversion of the other party. Preferably the difference in height of the element.

因第1配線基板具有被個片化之複數第1陶瓷層，故在接合工程中加熱挾持體之時，各第1陶瓷層互相不會拘束對方側，可以追隨被疊層於各部位之P型熱電轉換元件和N型熱電轉換元件之熱膨脹。於是，在接合工程中，藉由先在P型熱電轉換元件和N型熱電轉換元件之中，至少線膨脹係數小之一方之熱電轉換元件和加壓板之間，配置補足構件，在接合時，可以使線膨脹係數大之另一方之熱電轉換元件之高度，和一方之熱電轉換元件及補足構件之高度接近。因此，在一組之加壓板之間，可以使各熱電轉換元件和第1配線層密接而均勻地加壓。因此，可以確實地接合各熱電轉換元件和第1配線基板，可以提高熱電轉換模組之接合可靠性。Since the first wiring substrate has a plurality of first ceramic layers that are singulated, each of the first ceramic layers does not restrict each other when the holder is heated during the bonding process, and can follow the P laminated on each part. Thermal expansion of the thermoelectric conversion element of the type N and the thermoelectric conversion element of the N type. Therefore, in the joining process, first, a complementary member is arranged between the thermoelectric conversion element having a smaller linear expansion coefficient and the pressure plate among the P-type thermoelectric conversion element and the N-type thermoelectric conversion element. The height of the other thermoelectric conversion element with a large linear expansion coefficient can be made close to the height of one thermoelectric conversion element and the complementary component. Therefore, it is possible to make each thermoelectric conversion element and the first wiring layer tightly and uniformly pressed between a set of pressure plates. Therefore, each thermoelectric conversion element and the first wiring substrate can be surely bonded, and the bonding reliability of the thermoelectric conversion module can be improved.

作為本發明之熱電轉換模組之製造方法的較佳實施態樣，以上述接合工程被設成先在被相向配置的一組加壓板之間，配置分別重疊上述第1配線基板之上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之挾持體，藉由在其疊層方向加壓該挾持體之狀態下加熱該挾持體，分別接合上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之工程，在上述接合工程中，先在上述疊層方向重疊配置偶數個上述挾持體，並且在上述疊層方向配置同數量的上述P型熱電轉換元件和上述N型熱電轉換元件為佳。As a preferred embodiment of the method for manufacturing a thermoelectric conversion module according to the present invention, the above-mentioned joining process is set to firstly arrange the first wiring substrates that overlap the first wiring substrates, respectively, between a group of pressure plates arranged opposite to each other. 1 Wiring layer and the holding body of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element, the holding body is heated while the holding body is pressurized in a lamination direction, and the first wiring layer and the holding body are joined respectively. In the project of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element, in the above-mentioned joining process, an even number of the above-mentioned holders are firstly arranged in the stacking direction, and the same number of the P-type thermoelectric conversions are arranged in the stacking direction. The device and the aforementioned N-type thermoelectric conversion device are preferred.

例如，藉由使各挾持體之中，在疊層方向鄰接之兩個挾持體之各第1配線基板彼此相向配置，可以在第1配線基板之面方向之各熱電轉換元件之配置處，分別於疊層方向各配置一個(同數量)P型熱電轉換元件和N型熱電轉換元件。如此一來，藉由在疊層方向重疊配置偶數個挾持體，可以總是以相同數量重疊配置P型熱電轉換元件和N型熱電轉換元件之中，線膨脹係數小的一方之熱電轉換元件，和線膨脹係數大的另一方之熱電轉換元件。依此，在接合(加熱)時，可以使重疊複數個的挾持體之高度在面方向均勻。因此，在一組之加壓板之間，可以使各熱電轉換元件和第1配線層密接而均勻地加壓。因此，可以確實地接合各熱電轉換元件和第1配線基板，可以提高熱電轉換模組之接合可靠性。再者，藉由如此地疊層複數挾持體，可以在一次的接合工程中，製造複數熱電轉換模組。For example, by arranging the first wiring substrates of the two holding bodies adjacent to each other in the stacking direction facing each other, the respective thermoelectric conversion elements in the plane direction of the first wiring substrate can be arranged separately. One (same number) P-type thermoelectric conversion element and N-type thermoelectric conversion element are arranged in the stacking direction. In this way, by arranging an even number of holders in the stacking direction, the thermoelectric conversion element having the smaller linear expansion coefficient among the P-type thermoelectric conversion element and the N-type thermoelectric conversion element can always be arranged in the same number. The other is a thermoelectric conversion element with a large linear expansion coefficient. According to this, when joining (heating), it is possible to make the height of a plurality of overlapping bodies uniform in the plane direction. Therefore, it is possible to make each thermoelectric conversion element and the first wiring layer tightly and uniformly pressed between a set of pressure plates. Therefore, each thermoelectric conversion element and the first wiring substrate can be surely bonded, and the bonding reliability of the thermoelectric conversion module can be improved. Furthermore, by stacking a plurality of holders in this way, a plurality of thermoelectric conversion modules can be manufactured in a single bonding process.

作為本發明之熱電轉換模組之製造方法之較佳實施型態，以在上述接合工程中，於各挾持體之間配設石墨薄片為佳。As a preferred embodiment of the manufacturing method of the thermoelectric conversion module of the present invention, it is preferable to arrange a graphite sheet between the holding bodies in the above joining process.

藉由使具有緩衝性之石墨薄片介於各挾持體之間，可以在第1配線基板之面方向之各熱電轉換元件之配置處，補正各個傾斜，可以更均勻地加壓各熱電轉換元件和第1配線基板。因此，可以確實地接合各熱電轉換元件和第1配線基板，可以提高熱電轉換模組之接合可靠性。By interposing the graphite sheet with cushioning properties between the holders, the inclination can be corrected at the arrangement position of each thermoelectric conversion element in the plane direction of the first wiring substrate, and the thermoelectric conversion elements and the thermoelectric conversion element can be pressed more uniformly. First wiring board. Therefore, each thermoelectric conversion element and the first wiring substrate can be surely bonded, and the bonding reliability of the thermoelectric conversion module can be improved.

作為本發明之熱電轉換模組之製造方法的較佳實施態樣，以上述金屬層形成工程被設成在上述陶瓷母材之上述一方之面，形成複數上述第1配線層，並且在上述陶瓷母材之另一方之面形成第1熱傳達金屬層的工程，在上述金屬層形成工程中，跨越相鄰的兩第1配線層之間形成上述第1熱傳達金屬層，並且跨越相鄰的兩第1陶瓷層形成區域之間而形成。As a preferred embodiment of the method for manufacturing a thermoelectric conversion module according to the present invention, the above-mentioned metal layer forming process is set to form a plurality of the first wiring layers on the one side of the ceramic base material, and the ceramics A process of forming a first heat transfer metal layer on the other side of the base material. In the metal layer forming process, the first heat transfer metal layer is formed across two adjacent first wiring layers, and the adjacent It is formed between two first ceramic layer forming regions.

即使在具有複數第1配線層之第1配線基板中，也藉由第1熱傳達金屬層而連結各第1配線層之間。因此，可以一體性處理各第1配線層，可以提升第1配線基板之處理性。再者，於將第1配線層和第1熱傳達金屬層接合於陶瓷母材之後，藉由沿著切割線分割陶瓷母材，可以形成具有容易配列在期望的圖案之第1配線層，和被個片化之第1陶瓷層的第1配線基板，可以圓滑地製造出熱電轉換模組。Even in a first wiring substrate having a plurality of first wiring layers, the first wiring layers are connected by the first heat-transmitting metal layer. Therefore, each first wiring layer can be processed integrally, and the rationality of the first wiring substrate can be improved. Furthermore, after the first wiring layer and the first heat-transmitting metal layer are bonded to the ceramic base material, the ceramic base material is divided along the cutting line to form a first wiring layer having an easy arrangement in a desired pattern, and The first wiring substrate having the first ceramic layer formed in a single piece can smoothly produce a thermoelectric conversion module.

再者，在接合工程中，藉由使石墨薄片介於各挾持體之間，可以防止各熱電轉換模組彼此被接合，可以容易使各熱電轉換模組之間解體。因此，可以穩定製造熱電轉換模組。In addition, in the joining process, the graphite sheet is interposed between the holding bodies, so that the thermoelectric conversion modules can be prevented from being joined to each other, and the thermoelectric conversion modules can be easily disassembled. Therefore, the thermoelectric conversion module can be stably manufactured.

作為本發明之熱電轉換模組之製造方法之較佳實施態樣，以在上述切割線形成工程中，上述切割線形成在上述陶瓷母材之一方之面上的除上述第1配線層之接合預定區域之外的非接合部為佳。再者，以切割線形成在上述陶瓷母材之另一方之面的除上述第1熱傳達金屬層之接合預定區域之外的非接合部為佳。As a preferred embodiment of the manufacturing method of the thermoelectric conversion module of the present invention, in the above-mentioned cutting line forming process, the cutting line is formed on one of the surfaces of the ceramic base material except for the bonding of the first wiring layer. Non-joined parts outside the predetermined area are preferred. Furthermore, it is preferable that a non-joined portion is formed on the other surface of the ceramic base material by a cutting line, except for a region where the first heat transfer metal layer is to be joined.

藉由切割線先形成在第1配線層之非接合部或第1熱傳達金屬層之非接合部，或是該些非接合部之雙方，在該些陶瓷母材之雙面，形成複數切割線，可以區劃第1陶瓷層形成區域。在切割線上重疊第1配線層或第1熱傳達金屬層而予以接合之情況，難以沿著切割線分割陶瓷母材。但是，藉由在與第1配線層或第1熱傳達金屬層之接合面相反之面(相反面)，形成切割線，容易沿著切割線分割陶瓷母材。因此，可以形成具有容易被配列成期望的圖案之第1配線層，和被個片化之第1陶瓷層的第1配線基板，可以圓滑地製造熱電轉換模組。A plurality of cuts are formed on both sides of the ceramic base materials by cutting lines first formed at the non-joined portion of the first wiring layer or the non-joined portion of the first heat transfer metal layer, or both of the non-joined portions. Line, the area where the first ceramic layer is formed can be divided. When the first wiring layer or the first heat transfer metal layer is superimposed on the cutting line and bonded, it is difficult to divide the ceramic base material along the cutting line. However, by forming a cutting line on the surface (opposite surface) opposite to the bonding surface of the first wiring layer or the first heat transfer metal layer, it is easy to divide the ceramic base material along the cutting line. Therefore, it is possible to form a first wiring substrate having a first wiring layer that can be easily arranged in a desired pattern and a first ceramic layer that is singulated, and it is possible to smoothly manufacture a thermoelectric conversion module.

以切割線不僅形成在第1配線層之非接合部及第1熱傳達金屬層之非接合部，也以先形成在第1配線層之接合部及第1熱傳達金屬層之接合部為佳。藉由也先在第1配線層之接合部及第1熱傳達金屬層之接合部形成切割線，並且可容易分割陶瓷母材。It is preferable that the cutting line is formed not only at the non-joined portion of the first wiring layer and the non-joined portion of the first heat transfer metal layer, but also preferably at the junction portion of the first wiring layer and the first heat transfer metal layer. . Since the cutting line is also formed in the joint portion of the first wiring layer and the joint portion of the first heat transfer metal layer, the ceramic base material can be easily divided.

作為本發明之熱電轉換模組之製造方法之較佳實施態樣，以在上述切割線形成工程中，上述切割線以貫通上述陶瓷母材之相向的邊彼此的直線來形成為佳。As a preferred embodiment of the method for manufacturing a thermoelectric conversion module according to the present invention, in the above-mentioned cutting line forming process, it is preferable that the cutting line is formed by a straight line penetrating the opposite sides of the ceramic base material.

藉由設成貫通陶瓷母材之相向的邊彼此的單純切割線，可以沿著切割線圓滑地分割陶瓷母材。因此，可以簡化製造工程。 [發明之效果]The ceramic base material can be smoothly divided along the cutting line by a simple cutting line that passes through the opposing sides of the ceramic base material. Therefore, manufacturing processes can be simplified. [Effect of the invention]

若藉由本發明時，可以防止熱電轉換元件之熱伸縮性差所致的破壞，可以提供接合可靠性、熱傳導性及導電性優良的熱電轉換模組。According to the present invention, the thermoelectric conversion element can be prevented from being damaged due to poor thermal expansion and contraction, and a thermoelectric conversion module having excellent joint reliability, thermal conductivity, and electrical conductivity can be provided.

以下，針對本發明之實施型態，一面參考圖面一面予以說明。圖1表示第1實施型態之熱電轉換模組101。該熱電轉換模組101被設成組合且配列複數熱電轉換元件3、4，熱電轉換元件3、4之P型熱電轉換元件3和N型熱電轉換元件4經由被配設在其一端側(圖1中為下側)之第1配線基板2A而被電性串聯連接的構成。圖中，P型熱電轉換元件3以「P」表示記載，N型熱電轉換元件4以「N」表示記載。另外，在熱電轉換模組101中，設成從各熱電轉換元件3、4之其他端部直接引出朝外部的配線91的構成。Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a thermoelectric conversion module 101 according to a first embodiment. The thermoelectric conversion module 101 is provided in combination and arranged in a plurality of thermoelectric conversion elements 3 and 4. The P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 of the thermoelectric conversion elements 3 and 4 are disposed on one end side thereof (FIG. 1 is a configuration in which the first wiring substrate 2A on the lower side is electrically connected in series. In the figure, the P-type thermoelectric conversion element 3 is described by "P", and the N-type thermoelectric conversion element 4 is described by "N". In addition, in the thermoelectric conversion module 101, a configuration is provided in which the wiring 91 which is externally led directly from the other ends of the respective thermoelectric conversion elements 3, 4 is provided.

P型熱電轉換元件3及N型熱電轉換元件4係藉由碲化合物、方鈷礦、填充方鈷礦、赫斯勒(Heusler)、半赫斯勒，晶籠化合物、矽化物、氧化物、矽鍺等之燒結體所構成。另外，有藉由摻雜物能取得P型和N型之雙方的化合物，和僅持有P型或N型中之任一方的性質的化合物。P-type thermoelectric conversion element 3 and N-type thermoelectric conversion element 4 are made of tellurium compound, skutter, filled skutter, Heusler, half Hessler, cage compound, silicide, oxide, It is composed of a sintered body such as silicon germanium. In addition, there are compounds in which both P-type and N-type can be obtained by a dopant, and compounds having properties of only one of P-type and N-type.

作為P型熱電轉換元件3之材料，使用Bi2 Te3 、Sb2 Te3 、PbTe、TAGS(=Ag‐Sb‐Ge‐Te)、Zn4 Sb3 、CoSb3 、CeFe4 Sb12 、Yb14 MnSb11 、FeVAl、MnSi1.73 、FeSi2 、Nax CoO2 、Ca3 Co4 O7 、Bi2 Sr2 Co2 O7 、SiGe等。A P-type thermoelectric material member 3 of the conversion, the use of Bi 2 Te 3, Sb 2 Te 3, PbTe, TAGS (= Ag-Sb-Ge-Te), Zn 4 Sb 3, CoSb 3, CeFe 4 Sb 12, Yb 14 MnSb 11 , FeVAl, MnSi 1.73 , FeSi 2 , Na x CoO 2 , Ca 3 Co 4 O 7 , Bi 2 Sr 2 Co 2 O 7 , SiGe, and the like.

作為N型熱電轉換元件4之材料，使用Bi2 Te3 、PbTe、La3 Te4 、CoSb3 、FeVAl、ZrNiSn、Ba8 Al16 Si30 、Mg2 Si、FeSi2 、SrTiO3 、CaMnO3 、ZnO、SiGe等。As the material of the N-type thermoelectric conversion element 4, Bi 2 Te 3 , PbTe, La 3 Te 4 , CoSb 3 , FeVAl, ZrNiSn, Ba 8 Al 16 Si 30 , Mg 2 Si, FeSi 2 , SrTiO 3 , CaMnO 3 , ZnO, SiGe, etc.

在該些材料中，對環境影影響小，資源埋藏量也豐富的矽化物材料受到注目。作為中溫型(300℃～500℃程度)之熱電轉換模組之熱電轉換材料，P型熱電轉換元件3使用矽化錳(MnSi1.73 )，N型熱電轉換元件4使用矽化鎂(Mg2 Si)。P型熱電轉換元件3所使用的矽化錳之線膨脹係數為10.8×10-6 /K左右，N型熱電轉換元件4所使用的矽化錳之線膨脹係數為17.0×10-6 /K左右。因此，在矽化錳之P型熱電轉換元件3和矽化錳之N型熱電轉換元件4之組合中，P型熱電轉換元件3之線膨脹係數小於N型熱電轉換元件4之線膨脹係數。Among these materials, silicide materials with little impact on the environment and abundant resources have attracted attention. As a thermoelectric conversion material for a medium-temperature type (300 ° C to 500 ° C) thermoelectric conversion module, P-type thermoelectric conversion element 3 uses manganese silicide (MnSi 1.73 ), and N-type thermoelectric conversion element 4 uses magnesium silicide (Mg 2 Si). . The linear expansion coefficient of manganese silicide used in the P-type thermoelectric conversion element 3 is about 10.8 × 10 -6 / K, and the linear expansion coefficient of manganese silicide used in the N-type thermoelectric conversion element 4 is about 17.0 × 10 -6 / K. Therefore, in the combination of the P-type thermoelectric conversion element 3 of manganese silicide and the N-type thermoelectric conversion element 4 of manganese silicide, the linear expansion coefficient of the P-type thermoelectric conversion element 3 is smaller than that of the N-type thermoelectric conversion element 4.

該些熱電轉換元件3、4被形成例如橫剖面為正方形(例如，一邊為1mm～8mm)之角柱形，橫剖面為圓形(例如，直徑為1mm～8mm)之圓柱狀，長度(沿著圖1之上下方向的長度)為1mm～10mm。P型熱電轉換元件3之長度和N型熱電轉換元件4之長度被設定成在常溫(25℃)中相等(幾乎相同長度)。另外，在各熱電於轉換元件3、4之兩端面，形成由鎳、銀、金等所構成之金屬化層41。金屬化層41之層厚被設成1μm以上100μm以下。The thermoelectric conversion elements 3 and 4 are formed into, for example, an angular column having a square cross section (for example, 1 mm to 8 mm on one side), a circular column having a cross section (for example, 1 mm to 8 mm in diameter), and a length (along The length in the up-down direction in FIG. 1) is 1 mm to 10 mm. The length of the P-type thermoelectric conversion element 3 and the length of the N-type thermoelectric conversion element 4 are set to be equal (almost the same length) at normal temperature (25 ° C). In addition, metallization layers 41 made of nickel, silver, gold, or the like are formed on both end surfaces of each of the thermoelectric conversion elements 3 and 4. The metallization layer 41 has a layer thickness of 1 μm to 100 μm.

第1配線基板2A之構成係如圖1所示般，被設成具有接合有熱電轉換元件3、4之第1配線層11A，和被接合於與第1配線層11A之熱電轉換元件3、4之接合面相反之面之第1陶瓷層21A，和被接合於與第1陶瓷層21A之配線層11A之接合面相反之面的第1熱傳達金屬層32A。另外，熱傳達金屬層32A並非必要的構成要素。As shown in FIG. 1, the structure of the first wiring substrate 2A is provided with a first wiring layer 11A to which the thermoelectric conversion elements 3 and 4 are bonded, and a thermoelectric conversion element 3 to be bonded to the first wiring layer 11A. The first ceramic layer 21A on the opposite side of the bonding surface of 4 and the first heat transfer metal layer 32A on the opposite side to the bonding surface of the wiring layer 11A of the first ceramic layer 21A. The heat transfer metal layer 32A is not an essential component.

第1陶瓷層21A係藉由一般的陶瓷，例如氧化鋁(Al2 O3 )、氮化鋁(AlN)、氮化矽(Si3 N4 )等之熱傳導性高，且具有絕緣性之構件而被形成。再者，第1陶瓷層21A被分離成複數(在圖1中為2個)，獨立形成在每個熱電轉換元件3、4。第1陶瓷層21A被形成例如俯視正方形狀。再者，第1陶瓷層21A之厚度被設成0.1mm以上2mm以下。The first ceramic layer 21A is made of a general ceramic, such as alumina (Al 2 O 3 ), aluminum nitride (AlN), and silicon nitride (Si 3 N 4 ). And was formed. In addition, the first ceramic layer 21A is separated into a plurality (two in FIG. 1), and is independently formed on each of the thermoelectric conversion elements 3 and 4. The first ceramic layer 21A is formed in a square shape in plan view, for example. The thickness of the first ceramic layer 21A is set to 0.1 mm or more and 2 mm or less.

在第1配線基板2A設置有一個俯視長方形狀之第1配線層11A，並且設置有2個俯視正方形狀之第1熱傳達金屬層32A。第1配線層11A係連接相鄰的P型熱電轉換元件3和N型熱電轉換元件4之間而被形成，並且，跨越2個第1陶瓷層21A、21A彼此之間而被形成。另外，第1熱傳達金屬層32A獨立形成在每個第1陶瓷層21A。The first wiring substrate 2A is provided with one first wiring layer 11A having a rectangular shape in plan view and two first heat transfer metal layers 32A having a square shape in plan view. The first wiring layer 11A is formed by connecting adjacent P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 and is formed across the two first ceramic layers 21A and 21A. The first heat transfer metal layer 32A is independently formed on each of the first ceramic layers 21A.

第1配線層11A係由銀、鋁、銅或鎳為主成分之材料所構成，被形成平面狀。作為第1配線層11A之材料，以純度99.99質量%以上之鋁(所謂的4N鋁)或純度99.99質量%以上之銅為佳。再者，作為連接P型熱電轉換元件3和N型熱電轉換元件4之第1配線層11A之厚度，以設成0.1mm以上2mm以下為佳。The first wiring layer 11A is made of a material mainly composed of silver, aluminum, copper, or nickel, and is formed in a planar shape. As the material of the first wiring layer 11A, aluminum having a purity of 99.99% by mass or more (so-called 4N aluminum) or copper having a purity of 99.99% by mass or more is preferable. The thickness of the first wiring layer 11A connecting the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 is preferably set to 0.1 mm or more and 2 mm or less.

第1配線層11A使用純度高之純鋁或純銅等之軟的材料，形成比較薄的厚度，依此可以使連結相鄰的兩熱電轉換元件3、4之間而設置的平面狀之第1配線層11A隨著兩熱電轉換元件3、4之熱伸縮容易變形、追隨，可以在該些熱電轉換元件3、4之間容易彎曲。另外，因鋁及銅比銀便宜，藉由鋁或銅成形第1配線層11A，可以便宜地製造熱電轉換模組101。再者，藉由鋁或銅形成第1配線層11A，可以良好地維持藉由第1配線層11A被連接之兩熱電轉換元件3、4間之熱傳導性或導電性。The first wiring layer 11A is made of a soft material such as pure aluminum or pure copper and has a relatively thin thickness, so that the first first planar layer provided between two adjacent thermoelectric conversion elements 3 and 4 can be provided. The wiring layer 11A is easily deformed and follows the thermal expansion and contraction of the two thermoelectric conversion elements 3 and 4, and can be easily bent between the thermoelectric conversion elements 3 and 4. In addition, since aluminum and copper are cheaper than silver, the first wiring layer 11A is formed from aluminum or copper, and the thermoelectric conversion module 101 can be manufactured inexpensively. Furthermore, by forming the first wiring layer 11A with aluminum or copper, the thermal conductivity or electrical conductivity between the two thermoelectric conversion elements 3 and 4 connected via the first wiring layer 11A can be maintained well.

再者，藉由第1配線層11A使用銀，可以良好地維持熱電傳導性或導電性，且即使在將厚度形成比較薄之情況，亦可以降低電阻。再者，包含第1配線層11A之第1配線基板2A被配置在熱電轉換模組101之高溫側之情況等，可以提升耐熱性或耐氧化性。另外，以銀形成第1配線層11A之情況，第1配線層11A之厚度以設成10μm以上200μm以下為佳。Furthermore, by using silver in the first wiring layer 11A, it is possible to maintain good thermoelectric conductivity or electrical conductivity, and to reduce resistance even when the thickness is made relatively thin. In addition, when the first wiring substrate 2A including the first wiring layer 11A is disposed on the high temperature side of the thermoelectric conversion module 101, the heat resistance or oxidation resistance can be improved. When the first wiring layer 11A is formed of silver, the thickness of the first wiring layer 11A is preferably set to 10 μm or more and 200 μm or less.

再者，與鋁或銀相比，雖然鎳之耐氧化性差，但是具有比較良好的耐熱性。再者，鎳比銀便宜，並且元件接合性比較好。因此，藉由第1配線層11A使用鎳之情況，可以構成性能和價格的平衡比較優的熱電轉換模組101。再者，包含第1配線層11A之第1配線基板2A被配置在熱電轉換模組101之高溫側之情況等，可以提升耐熱性或耐氧化性。另外，以鎳形成第1配線層11A之情況，第1配線層11A之厚度以設成0.1μm以上1μm以下為佳。Furthermore, nickel has a lower oxidation resistance than aluminum or silver, but has relatively good heat resistance. Furthermore, nickel is cheaper than silver, and element bonding is better. Therefore, when nickel is used as the first wiring layer 11A, a thermoelectric conversion module 101 having a good balance between performance and price can be configured. In addition, when the first wiring substrate 2A including the first wiring layer 11A is disposed on the high temperature side of the thermoelectric conversion module 101, the heat resistance or oxidation resistance can be improved. In the case where the first wiring layer 11A is formed of nickel, the thickness of the first wiring layer 11A is preferably set to be 0.1 μm or more and 1 μm or less.

再者，第1熱傳達金屬層32A係由以鋁或銅為主成分之材料(鋁、鋁合金、銅或銅合金)所構成，被形成平面狀。作為該第1熱傳達金屬層32A之材料，以純度99.99質量%以上之鋁(所謂的4N鋁)或純度99.9質量%以上之銅為佳。如此一來，藉由第1熱傳達金屬層32A，使用純度高之純鋁或純銅等之軟的材料，於第1熱傳達金屬層32A接觸於熱源或冷卻源之時，提升追隨性，且提升熱傳達性。因此，不會有降低熱電轉換模組101之熱電交換性能之情形。The first heat transfer metal layer 32A is made of a material (aluminum, aluminum alloy, copper, or copper alloy) containing aluminum or copper as a main component, and is formed in a flat shape. As the material of the first heat transfer metal layer 32A, aluminum having a purity of 99.99% by mass or more (so-called 4N aluminum) or copper having a purity of 99.9% by mass or more is preferable. In this way, by using the first heat transfer metal layer 32A and a soft material such as pure aluminum or pure copper with high purity, when the first heat transfer metal layer 32A contacts a heat source or a cooling source, the followability is improved, and Improve heat transfer. Therefore, there is no case where the thermoelectric exchange performance of the thermoelectric conversion module 101 is reduced.

另外，第1配線層11A或第1熱傳達金屬層32A之大小(平面尺寸)，係因應被連接於第1配線層11A之熱電轉換元件3、4之大小，被設定成也和熱電轉換元件3、4之端面面積相等或稍大。再者，第1陶瓷層21A被形成可以在第1配線層11A、各1熱傳達金屬層32A、32A之周圍，及各1熱傳達金屬層32A、32A之間，確保寬度0.1mm以上之空間之程度的平面形狀。The size (planar size) of the first wiring layer 11A or the first heat transfer metal layer 32A is set in accordance with the size of the thermoelectric conversion elements 3 and 4 connected to the first wiring layer 11A. The end face areas of 3 and 4 are equal or slightly larger. In addition, the first ceramic layer 21A is formed so as to ensure a space of 0.1 mm or more between the first wiring layer 11A, each of the first heat transfer metal layers 32A, and 32A, and between each of the first heat transfer metal layers 32A and 32A. Degree of flat shape.

接著，針對構成如此之熱電轉換模組101之製造方法予以說明。本實施型態之熱電轉換模組之製造方法係如圖2之流程圖所示般，藉由複數工程S11～S14所構成。再者，在圖3A～D及圖4A～D表示本實施型態之熱電轉換模組之製造方法之各工程之一例。Next, a manufacturing method of such a thermoelectric conversion module 101 will be described. The manufacturing method of the thermoelectric conversion module of the present embodiment is shown in the flowchart of FIG. 2 and is composed of a plurality of projects S11 to S14. Moreover, an example of each process of the manufacturing method of the thermoelectric conversion module of this embodiment is shown in FIG. 3A-D and FIG. 4A-D.

(切割線形成工程) 　　首先，如圖3A及圖4A所示般，在構成第1陶瓷層21A、21A之大型陶瓷母材201，形成分割複數第1陶瓷層21A、21A之切割線(分割溝)202(切割線形成工程S11)。而且，藉由形成切割線202，在陶瓷母材201區劃複數(2個)第1陶瓷層形成區域203、203(Cut line forming process) First, as shown in FIG. 3A and FIG. 4A, a large number of first ceramic layers 21A and 21A are formed on the large ceramic base material 201 to form a plurality of first ceramic layers 21A and 21A. ) 202 (cut line formation process S11). Furthermore, by forming the cutting line 202, a plurality (two) of first ceramic layer forming regions 203 and 203 are divided in the ceramic base material 201.

切割線202係例如圖3A所示般，可以藉由雷射加工形成。具體而言，藉由在陶瓷母材201之單面，照射CO2 雷射、YAG雷射、YVO4 雷射、YLF雷射等之雷射光L，可以進行切割線202之加工。在根據雷射加工的切割線202之加工中，切削加工在陶瓷母材201之表面被照射雷射光L之部分，形成切割線202。The cutting line 202 is as shown in FIG. 3A and can be formed by laser processing. Specifically, the single side of the ceramic base material 201 is irradiated with laser light L such as a CO 2 laser, a YAG laser, a YVO 4 laser, a YLF laser, or the like, so that the cutting line 202 can be processed. In the processing of the cutting line 202 according to the laser processing, a portion of the surface of the ceramic base material 201 irradiated with the laser light L is cut to form the cutting line 202.

切割線202係如圖4A所示般，至少形成在陶瓷母材201之單面。具體而言，並非跨越在2個第1陶瓷層21A、21A而被形成之第1配線層11A的接合面，在其相反側之面(相反面)形成切割線202。即是，如圖4C所示般，在陶瓷母材201之一方之面接合第1配線層11A之情況，切割線202如圖4A所示般，先形成在陶瓷母材201之另一方之面的除第1熱傳達金屬層32A之接合預定區域之外的非接合部。另外，切割線202並非僅形成在第1配線層11A之非接合部及第1熱傳達金屬層32A之非接合部，亦形成在第1配線11A之接合部，亦可以形成在陶瓷母材201之兩面。The cutting line 202 is formed on at least one side of the ceramic base material 201 as shown in FIG. 4A. Specifically, the cutting line 202 is not formed on the opposite surface (opposite surface) of the first wiring layer 11A formed across the two first ceramic layers 21A, 21A. That is, as shown in FIG. 4C, when the first wiring layer 11A is bonded to one side of the ceramic base material 201, the cutting line 202 is formed on the other side of the ceramic base material 201 as shown in FIG. 4A. Non-joined portions other than the region where the first heat transfer metal layer 32A is to be joined. In addition, the cutting line 202 is formed not only on the non-joined portion of the first wiring layer 11A and the non-joined portion of the first heat transfer metal layer 32A, but also on the joined portion of the first wiring 11A, and may be formed on the ceramic base material 201. Both sides.

再者，切割線202係如圖4A所示般，以貫通陶瓷母材201之相向的邊彼此之直線形成。在此情況下，在陶瓷母材201形成貫通彼此之一條切割線202，陶瓷母材201藉由一條切割線202被分割為二，整齊排列形成被區劃成第1陶瓷層21A、21A之外形大小的2個第1陶瓷層形成區域203、203。In addition, as shown in FIG. 4A, the cutting line 202 is formed as a straight line passing through the opposite sides of the ceramic base material 201. In this case, one cutting line 202 penetrating each other is formed in the ceramic base material 201. The ceramic base material 201 is divided into two by one cutting line 202, and the ceramic base material 201 is neatly arranged to form a shape that is divided into shapes other than the first ceramic layers 21A and 21A. The two first ceramic layers form regions 203 and 203.

另外，雖然省略圖示，但是於雷射加工後，藉由浸漬於蝕刻液，洗淨形成有切割線202之陶瓷母材201。Although not shown in the figure, after laser processing, the ceramic base material 201 on which the cutting lines 202 are formed is washed by immersion in an etchant.

再者，切割線形成工程S11並非被限定於雷射加工者，亦可以藉由鑽石劃線器等之其他的加工方法來實施。The cutting line forming process S11 is not limited to a laser processor, and may be implemented by other processing methods such as a diamond scriber.

(金屬層形成工程) 　　於切割線形成工程S11後，在陶瓷母材201之一方之面形成第1配線層11A，在另一方之面形成第1熱傳達金屬層32A(金屬層形成工程S12)。例如，如圖3B及圖4B所示般，在陶瓷母材201之一方之面，即是無形成切割線202之面，接合成為第1配線層11A之金屬板301，並且在形成有切割線202之另一方之面接合成為第1熱傳達金屬層32A之金屬板302。該些金屬板301和陶瓷母材201、陶瓷材201和金屬板302的接合，使用硬焊材等進行。(Metal layer formation process) After the cutting line formation process S11, a first wiring layer 11A is formed on one side of the ceramic base material 201, and a first heat transfer metal layer 32A is formed on the other side (metal layer formation process S12). . For example, as shown in FIG. 3B and FIG. 4B, on one side of the ceramic base material 201, that is, the side where the cutting line 202 is not formed, the metal plate 301 that becomes the first wiring layer 11A is bonded, and the cutting line is formed The other surface of 202 is joined to form the metal plate 302 of the first heat transfer metal layer 32A. These metal plates 301 and the ceramic base material 201, the ceramic material 201 and the metal plate 302 are joined using a brazing material or the like.

金屬板301、302藉由以鋁為主成分之金屬材料被形成之情況，使用Al‐Si、Al‐Ge、Al‐Cu、Al‐Mg或Al‐Mn等之接合材，接合金屬板301、302和陶瓷母材201。再者，金屬板301、302藉由以銅為主成分之金屬材料被形成之情況，使用Ag‐Cu‐Ti或Ag‐Ti等之接合材，藉由活性金屬硬焊接合金屬板301、302和陶瓷母材201。再者，金屬板301、302和陶瓷母材201之接合，除硬焊以外即使藉由被稱為TLP接合法(Transient Liquid Phase Bonding)之暫態液相接合法進行接合亦可。In the case where the metal plates 301 and 302 are formed of a metal material mainly composed of aluminum, a joining material such as Al-Si, Al-Ge, Al-Cu, Al-Mg, or Al-Mn is used to join the metal plates 301 and 301. 302 和 ceramic base material 201. When the metal plates 301 and 302 are formed of a metal material mainly composed of copper, a bonding material such as Ag-Cu-Ti or Ag-Ti is used, and the metal plates 301 and 302 are brazed by an active metal. And ceramic base material 201. In addition, the joining of the metal plates 301 and 302 and the ceramic base material 201 may be performed by a transient liquid phase bonding method called TLP bonding method (Transient Liquid Phase Bonding) other than brazing.

接著，對接合金屬板301、302之陶瓷母材201施予蝕刻處理，如圖3C及圖4C所示般，在陶瓷母材201之一方之面，對跨越配設在各第1陶瓷層形成區域203、203之第1配線層11A進行圖案製作，並且在陶瓷母材201之另一方之面，對與各第1陶瓷層形成區域203、203獨立之第1熱傳達金屬層32A、32A進行圖案製作。切割線202形成在第1熱傳達金屬層32A、32A之除接合預定區域之外的非接合部。因此，藉由除去重疊在切割線202上而被形成的金屬層部分(金屬板)，可以使切割線202之全體露出。依此，形成被圖案製作之第1配線層11A及第1熱傳達金屬層32A、32A和陶瓷母材201之疊層體204。Next, as shown in FIG. 3C and FIG. 4C, the ceramic base material 201 joining the metal plates 301 and 302 is subjected to an etching treatment. As shown in FIG. 3C and FIG. The first wiring layer 11A of the regions 203 and 203 is patterned. On the other side of the ceramic base material 201, the first heat transfer metal layers 32A and 32A that are independent of the respective first ceramic layer forming regions 203 and 203 are patterned. Pattern making. The dicing line 202 is formed in a non-joined portion of the first heat transfer metal layers 32A, 32A other than the area to be joined. Therefore, by removing the metal layer portion (metal plate) formed on the cutting line 202, the entire cutting line 202 can be exposed. As a result, a laminated body 204 of the patterned first wiring layer 11A and the first heat transfer metal layers 32A and 32A and the ceramic base material 201 is formed.

另外，第1配線層11A藉由事先將被圖案製作之金屬板接合於陶瓷母材201之一方之面，亦可以不施予蝕刻處理而形成。同樣，第1熱傳達金屬層32A、32A也藉由事先將被圖案製作之個片之金屬板接合於陶瓷母材201之另一方之面，亦可以不施予蝕刻處理而形成。In addition, the first wiring layer 11A may be formed by bonding a patterned metal plate to one surface of the ceramic base material 201 in advance, or without forming an etching treatment. Similarly, the first heat transfer metal layers 32A and 32A may be formed by joining a metal plate of a patterned piece to the other surface of the ceramic base material 201 in advance, or without forming an etching treatment.

再者，第1配線層11A亦可以藉由銀(Ag)之燒結體構成。在以銀之燒結體構成第1配線層11A之情況，在陶瓷母材201之一方之面，塗佈包含銀及玻璃之添加有玻璃的銀膏而進行加熱處理，依此燒結銀膏而可以形成。因此，不施予蝕刻處理而可以形成被圖案製作之第1配線層11A。另外，以銀的燒結體構成第1配線層11A之情況，以氧化鋁(Al2 O3 )構成陶瓷母材201之至少與銀膏之界面相接的面為佳。此時，例如，即使以氧化鋁構成陶瓷母材201之全體亦可，即使使用使氮化鋁氧化而表面成為氧化鋁之陶瓷基板亦可。The first wiring layer 11A may be formed of a sintered body of silver (Ag). When the first wiring layer 11A is formed of a sintered body of silver, one side of the ceramic base material 201 is coated with a glass-added silver paste containing silver and glass and heat-treated, and the silver paste can be sintered in accordance with this. form. Therefore, the patterned first wiring layer 11A can be formed without performing an etching process. In the case where the first wiring layer 11A is formed of a sintered body of silver, it is preferable that the surface of the ceramic base material 201 which is at least in contact with the interface of the silver paste is formed of alumina (Al 2 O 3 ). In this case, for example, even if the entire ceramic base material 201 is made of alumina, a ceramic substrate that oxidizes aluminum nitride to make the surface alumina may be used.

(分割工程) 　　於金屬層形成工程S12之後，藉由以在形成有切割線202之面側成為凸之方式，彎曲陶瓷母材201，沿著切割線202分割疊層體204之陶瓷母材201，使第1陶瓷層21A、21A個片化。而且，如圖3D及圖4D所示般，形成接合第1配線層11A和第1陶瓷層21A、21A和第1熱傳達金屬層32A、32A之第1配線基板2A(分割工程S13)。(Segmentation process) After the metal layer formation process S12, the ceramic base material 201 is bent so as to be convex on the side where the cutting line 202 is formed, and the ceramic base material 201 of the laminated body 204 is divided along the cutting line 202. The first ceramic layers 21A and 21A are made into pieces. As shown in FIG. 3D and FIG. 4D, a first wiring substrate 2A that joins the first wiring layer 11A and the first ceramic layers 21A and 21A and the first heat transfer metal layers 32A and 32A is formed (division process S13).

因切割線202被形成在第1配線層11A之接合面之相反側(相反面)，故可以沿著切割線202容易分割陶瓷母材201。再者，因切割線202係以貫通陶瓷母材201之相向的邊彼此的單純直線所成，故可以沿著切割線202圓滑地分割陶瓷母材201。Since the cutting line 202 is formed on the opposite side (opposite side) to the bonding surface of the first wiring layer 11A, the ceramic base material 201 can be easily divided along the cutting line 202. In addition, since the cutting line 202 is formed by a simple straight line that passes through the opposing sides of the ceramic base material 201, the ceramic base material 201 can be smoothly divided along the cutting line 202.

(接合工程) 　　在第1配線基板2A之第1配線層11A接合P型熱電轉換元件3之一方之端面，和N型熱電轉換元件4之一方之端面(接合工程S14)。具體而言，第1配線層11A和P型熱電轉換元件3及N型熱電轉換元件4之接合，藉由使用糊膏或硬焊材之接合，根據施加荷重的固相擴散接合等進行接合。(Joining process) (1) An end face of one of the P-type thermoelectric conversion element 3 and an end face of one of the N-type thermoelectric conversion element 4 are joined to the first wiring layer 11A of the first wiring substrate 2A (joining process S14). Specifically, the first wiring layer 11A is joined to the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 by joining using a paste or a brazing material, and performing solid-phase diffusion joining by applying a load.

在接合工程S14中，因第1配線層11A和P型熱電轉換元件3及N型熱電轉換元件4之接合時，負荷適當的負荷適當的荷重，故如圖5所示般，在被相向配置之一組加壓板401A、401B之間，配置分別重疊第1配線基板2A之第1配線層11A和P型熱電轉換元件3及N型熱電轉換元件4的挾持體405，在其疊層方向加壓挾持體405之狀態進行加熱。依此，分別接合第1配線層11A和P型熱電轉換元件3及N型熱電轉換元件4。在此情況下，各加壓板401A、401B藉由碳板構成。In the joining process S14, when the first wiring layer 11A and the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are joined, an appropriate load is applied and an appropriate load is applied. Therefore, as shown in FIG. Between one set of pressure plates 401A and 401B, a first wiring layer 11A, a first wiring layer 2A, and a P-type thermoelectric conversion element 3 and an N-type thermoelectric conversion element 4 are stacked on the first wiring layer 2A, respectively. Heating is performed in the state of the pressure holding body 405. Accordingly, the first wiring layer 11A and the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are respectively bonded. In this case, each of the pressure plates 401A and 401B is configured by a carbon plate.

在該第1配線層11A和P型熱電轉換元件3及N型熱電轉換元件4之接合時，在P型熱電轉換元件3和N型熱電轉換元件4之中至少線膨脹係數小之一方之熱電轉換元件，和加壓板401A、401B之間配置補足構件411，補足起因於P型熱電轉換元件3和N型熱電轉換元件4之線膨脹差的熱伸縮差。具體而言，在矽化錳(線膨脹係數10.8× 10-6 /K程度)之P型熱電轉換元件3和矽化鎂(線膨脹係數17.0×10-6 /K程度)的N型熱電轉換元件4之組合中，P型熱電轉換元件3之線膨脹數較N型熱電轉換元件4之線膨脹係數小。因此，在至少線膨脹係數小的P型熱電轉換元件3和加壓板401A、401B之間配置補足構件411。When the first wiring layer 11A is bonded to the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4, at least one of the linear expansion coefficients of the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 is smaller. The conversion element is provided with a supplementary member 411 between the pressure plates 401A and 401B to compensate for the thermal expansion difference caused by the linear expansion difference between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4. Specifically, the P-type thermoelectric conversion element 3 of manganese silicide (linear expansion coefficient of 10.8 × 10 -6 / K) and the N-type thermoelectric conversion element 4 of magnesium silicide (linear expansion coefficient of 17.0 × 10 -6 / K) In the combination, the linear expansion number of the P-type thermoelectric conversion element 3 is smaller than that of the N-type thermoelectric conversion element 4. Therefore, a supplementary member 411 is arranged between the P-type thermoelectric conversion element 3 having at least a small linear expansion coefficient and the pressure plates 401A and 401B.

另外，藉由補足構件411事先固定於加壓板401A、401B使一體化，成為容易處理。再者，雖然省略圖示，但是為了防止接合，在補足構件411和P型熱電轉換元件3之金屬化層41或第1熱傳達金屬層32A之間配置石墨薄片。In addition, the supplementary member 411 is fixed to the pressure plates 401A and 401B in advance and integrated, making it easy to handle. Although not shown, a graphite sheet is disposed between the complementary member 411 and the metallization layer 41 or the first heat transfer metal layer 32A of the P-type thermoelectric conversion element 3 to prevent bonding.

如圖5所示般，例如，僅在P型熱電轉換元件3側配置補足構件411之情況，補足構件411需要使用線膨脹係數比N型熱電轉換元件4還高的材料。線膨脹係數較N型熱電轉換元件4之線膨脹係數(17.0×10-6 /K程度)高的材料，有例如鋁(23×10-6 /K)。補足構件411使用該材料。As shown in FIG. 5, for example, when the supplementary member 411 is disposed only on the P-type thermoelectric conversion element 3 side, the supplemental member 411 needs to use a material having a coefficient of linear expansion higher than that of the N-type thermoelectric conversion element 4. A material having a linear expansion coefficient higher than that of the N-type thermoelectric conversion element 4 (approximately 17.0 × 10 -6 / K) includes, for example, aluminum (23 × 10 -6 / K). The supplemental member 411 uses this material.

而且，使第1配線基板2A和P型熱電轉換源3及N型熱電轉換元件4之接合時的P型熱電轉換元件3及補足構件411之高度和N型熱電轉換元件4之高度之差，較P型熱電轉換元件3之高度和N型熱電轉換元件4之高度之差更小。依此，可以使線膨脹係數大之N型熱電轉換元件4之高度，和線膨脹係數小之P型熱電轉換元件3及補足構件411之高度接近。因此，在一組加壓板401A、401B之間，使各熱電轉換元件3、4和第1配線層11A密接而可以分別均勻地加壓。The difference between the heights of the P-type thermoelectric conversion element 3 and the supplementary member 411 and the height of the N-type thermoelectric conversion element 4 when the first wiring substrate 2A and the P-type thermoelectric conversion source 3 and the N-type thermoelectric conversion element 4 are joined, It is smaller than the difference between the height of the P-type thermoelectric conversion element 3 and the height of the N-type thermoelectric conversion element 4. Accordingly, the height of the N-type thermoelectric conversion element 4 having a large linear expansion coefficient can be made close to the height of the P-type thermoelectric conversion element 3 and the supplementary member 411 having a small linear expansion coefficient. Therefore, each of the thermoelectric conversion elements 3 and 4 and the first wiring layer 11A are closely adhered between the pair of pressure plates 401A and 401B, so that they can be uniformly pressed.

另外，在圖5所示之例中，雖然在下側之加壓板401A和挾持體405之間配置補足構件411，並且在上側之加壓板401B和挾持體405之間配置補足構件411，但是即使在任一方之間配置補足構件411亦可。In the example shown in FIG. 5, a supplementary member 411 is disposed between the lower pressure plate 401A and the holding body 405, and a supplemental member 411 is disposed between the upper pressure plate 401B and the holding body 405. The supplementary member 411 may be arranged between any one of them.

另外，在接合工程S14中，如圖6所示般，亦可以在P型熱電轉換元件3側和N型熱電轉換元件4側之雙方配置補足構件412、413而進行。在例如線膨脹係數小的P型熱電轉換元件3側，配置成為由線膨脹係數大的材料所構成之補足構件412，在線膨脹係數大的N型熱電轉換元件4側，配置線膨脹係數較補足構件412小的材料所構成之補足構件413。另外，雖然省略圖示，但是為了防止接合，在各補足構件412、413和兩熱電轉換元件3、4之金屬化層41之間，配置石墨薄片。In addition, in the joining process S14, as shown in FIG. 6, the supplementary members 412 and 413 may be disposed on both the P-type thermoelectric conversion element 3 side and the N-type thermoelectric conversion element 4 side. For example, on the P-type thermoelectric conversion element 3 side with a small linear expansion coefficient, a supplementary member 412 composed of a material with a large linear expansion coefficient is arranged, and on the N-type thermoelectric conversion element 4 side with a large linear expansion coefficient, a linear expansion coefficient is more complementary. The supplementary member 413 is composed of a small material of the member 412. In addition, although illustration is omitted, in order to prevent bonding, a graphite sheet is disposed between each of the supplementary members 412 and 413 and the metallization layer 41 of the two thermoelectric conversion elements 3 and 4.

例如，作為配置在P型熱電轉換元件3側之補足構件412之材料，可以使用鋁(23×10-6 /K)或銅(17×10-6 /K)。例如，作為配置在N型熱電轉換元件4側之補足構件413之材料，可以使用鐵(12×10-6 /K)或鎳(13×10-6 /K)。For example, as a material of the supplementary member 412 disposed on the P-type thermoelectric conversion element 3 side, aluminum (23 × 10 -6 / K) or copper (17 × 10 -6 / K) can be used. For example, as the material of the supplementary member 413 disposed on the N-type thermoelectric conversion element 4 side, iron (12 × 10 -6 / K) or nickel (13 × 10 -6 / K) can be used.

依此，在第1配線基板2A和P型熱電轉換元件3及N型熱電轉換元件4之接合時，可以使P型熱電轉換元件3及補足構件412之高度和N型熱電轉換元件4及補足構件413之高度之差，較P型熱電轉換元件3之高度和N型熱電轉換元件4之高度之差更小，可以使P型熱電轉換元件3及補足構件412之高度和N型熱電轉換元件4及補足構件413之高度一致。因此，在一組加壓板401A、401B之間，使各熱電轉換元件3、4和第1配線層11A密接而可以分別均勻地加壓。Accordingly, when the first wiring substrate 2A is bonded to the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4, the height of the P-type thermoelectric conversion element 3 and the supplementary member 412 and the N-type thermoelectric conversion element 4 and the supplementary The difference in height of the member 413 is smaller than the difference between the height of the P-type thermoelectric conversion element 3 and the height of the N-type thermoelectric conversion element 4, which can make the height of the P-type thermoelectric conversion element 3 and the supplementary member 412 and the N-type thermoelectric conversion element 4 and the height of the supplementary member 413 are the same. Therefore, each of the thermoelectric conversion elements 3 and 4 and the first wiring layer 11A are closely adhered between the pair of pressure plates 401A and 401B, so that they can be uniformly pressed.

另外，在上述中，在線膨脹係數小的P型熱電轉換元件3側，配置由線膨脹係數大的材料所構成之補足構件412，在線膨脹係數大的N型熱電轉換元件4側配置由線膨脹係數較補足構件412小的材料所構成之補足構件413，但是即使在P型熱電轉換元件3側配置由線膨脹係數小的材料所構成之補足構件，在N型熱電轉換元件4側配置由線膨脹係數大的材料所構成的補足構件亦可。此時，因使第1配線基板2A和P型熱電轉換元件3及N型熱電轉換元件4之接合(加熱)時的P型熱電轉換元件3側之高度和N型熱電轉換元件4側之高度一致，故若調整各補足構件之厚度即可。In addition, in the above, a supplementary member 412 made of a material having a large linear expansion coefficient is disposed on the P-type thermoelectric conversion element 3 side having a small linear expansion coefficient, and an N-type thermoelectric conversion element 4 side having a large linear expansion coefficient is disposed by a linear expansion. The supplementary member 413 is made of a material having a smaller coefficient than the supplementary member 412. However, even if a supplementary member made of a material having a small linear expansion coefficient is disposed on the P-type thermoelectric conversion element 3 side, an N-type thermoelectric conversion element 4 side is disposed by a wire. A supplementary member made of a material having a large expansion coefficient may be used. At this time, the height of the P-type thermoelectric conversion element 3 side and the N-type thermoelectric conversion element 4 side when the first wiring substrate 2A is joined (heated) with the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 It is consistent, so if the thickness of each supplementary member can be adjusted.

另外，因第1配線基板2A具有被個片化之複數第1陶瓷層21A、21A，故在接合工程S14中，挾持體405被加熱之時，各第1陶瓷層21A、21A不互相拘束對方側。因此，可以追隨於被疊層於第1配線基板2A之各部位的P型熱電轉換元件3和N型熱電轉換元件4之熱膨脹而移動。依此，可以製造出隔著第1配線基板2A而串聯連接P型熱電轉換元件3和N型熱電轉換元件4之熱電轉換模組101。In addition, since the first wiring substrate 2A has a plurality of first ceramic layers 21A and 21A, the first ceramic layers 21A and 21A do not restrict each other when the holding body 405 is heated in the bonding process S14. side. Therefore, it is possible to move following the thermal expansion of the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 laminated on each portion of the first wiring substrate 2A. Accordingly, a thermoelectric conversion module 101 in which the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are connected in series with the first wiring substrate 2A in mind can be manufactured.

如此被製造的熱電轉換模組101在例如圖1之下側，配置外部之熱源(省略圖示)或冷卻流路(省略圖示)等。依此，在各熱電轉換元件3、4產生因應上下之溫度差的電動勢，在配列之兩端的配線91、91之間，取得產生在各熱電轉換元件3、4之電動勢之總和的電位差。In the thermoelectric conversion module 101 manufactured in this manner, for example, an external heat source (not shown), a cooling flow path (not shown), or the like is arranged on the lower side of FIG. 1. According to this, an electromotive force is generated in each of the thermoelectric conversion elements 3 and 4 in accordance with the temperature difference between the upper and lower sides, and the potential difference generated by the sum of the electromotive forces in the respective thermoelectric conversion elements 3 and 4 is obtained between the wires 91 and 91 at both ends of the arrangement.

再者，在如此之使用環境下，在熱電轉換模組101之兩熱電轉換元件3、4之熱膨脹產生差。但是，在熱電轉換模組101中，構成第1配線基板2A之各第1陶瓷層21A、21A在相鄰的P型熱電轉換元件3和N型熱電轉換元件4之間分離，獨立形成在每個熱電轉換元件3、4，剛體之第1陶瓷層21A、21A中之P型熱電轉換元件3和N型熱電轉換元件4之間的連接被分斷。因此，各熱電轉換元件3、4藉由各第1陶瓷層21A、21A，無隨著熱伸縮的變形被拘束之情形。Furthermore, under such a use environment, there is a difference in thermal expansion between the two thermoelectric conversion elements 3, 4 of the thermoelectric conversion module 101. However, in the thermoelectric conversion module 101, each of the first ceramic layers 21A and 21A constituting the first wiring substrate 2A is separated between the adjacent P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4, and is independently formed in each The connections between the P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 in each of the thermoelectric conversion elements 3 and 4 and the rigid first ceramic layers 21A and 21A are disconnected. Therefore, each of the thermoelectric conversion elements 3 and 4 does not need to be restrained due to the thermal expansion and contraction by the first ceramic layers 21A and 21A.

再者，相鄰的P型熱電轉換元件3和N型熱電轉換元件4之熱伸縮差，可以使連接兩熱電轉換元件3、4之間的第1配線層11A之連接部分變形而吸收尺寸變化。因此，可以抑制藉由熱伸縮差而產生在各熱電轉換元件3、4內之熱應力的發生。而且，可以防止藉由各熱電轉換元件3、4之熱伸縮差，熱電轉換元件3、4從第1配線基板2A(第1配線層11A)被剝離，或在熱電轉換元件3、4產生裂紋之情形。因此，可以良好地維持藉由第1配線層11A被連接之熱電轉換元件3、4間之電性連接，且可以良好地維持熱電轉換模組101之接合可靠性、熱傳導性及導電性。Furthermore, the difference in thermal expansion between adjacent P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 can deform the connection portion of the first wiring layer 11A connecting the two thermoelectric conversion elements 3 and 4 to absorb dimensional changes. . Therefore, it is possible to suppress the occurrence of thermal stress in the thermoelectric conversion elements 3 and 4 due to the difference in thermal expansion and contraction. In addition, it is possible to prevent the thermoelectric conversion elements 3 and 4 from being peeled from the first wiring substrate 2A (the first wiring layer 11A) due to the thermal expansion difference of the respective thermoelectric conversion elements 3 and 4 or to cause cracks in the thermoelectric conversion elements 3 and 4. Situation. Therefore, the electrical connection between the thermoelectric conversion elements 3 and 4 connected via the first wiring layer 11A can be maintained well, and the connection reliability, thermal conductivity, and electrical conductivity of the thermoelectric conversion module 101 can be maintained well.

再者，在第1配線基板2A設置有絕緣基板亦即第1陶瓷層21A、21A。因此，於在熱源等設置熱電轉換模組101之時，可以藉由第1陶瓷層21A、21A，防止熱源等和第1配線層11A接觸之情形。因此，可以確實地迴避熱源等和第1配線層11A之電性洩漏，且可以良好地維持絕緣狀態。The first wiring substrate 2A is provided with first insulating layers 21A and 21A that are insulating substrates. Therefore, when the thermoelectric conversion module 101 is provided on the heat source or the like, the first ceramic layers 21A and 21A can prevent the heat source and the like from coming into contact with the first wiring layer 11A. Therefore, electrical leakage from the heat source and the like and the first wiring layer 11A can be reliably avoided, and the insulation state can be maintained well.

另外，由於熱電轉換元件3、4本身電壓低，故若絕緣基板亦即第1陶瓷層21A、21A獨立形成在每個熱電轉換元件3、4時，即是在第1配線層11A之全面不接合第1陶瓷層21A、21A，只要第1配線層11A不與熱源等物理性接觸，就不會產生電性洩漏。In addition, since the voltages of the thermoelectric conversion elements 3 and 4 themselves are low, if the insulating substrates, that is, the first ceramic layers 21A, 21A are independently formed on each of the thermoelectric conversion elements 3, 4, it is the entirety of the first wiring layer 11A The first ceramic layers 21A and 21A are bonded, and as long as the first wiring layer 11A is not in physical contact with a heat source or the like, no electrical leakage occurs.

再者，因在第1配線基板2A，設置有第1熱傳達金屬層32A、32A，故當在熱源等設置熱電轉換模組101之時，藉由第1熱傳達金屬層32A、32A，可以提高熱源等和熱電轉換模組101之密接性，可以提升熱傳達性。因此，可以提升熱電轉換模組101之熱電交換性能(發電效率)。Furthermore, since the first heat transfer metal layers 32A and 32A are provided on the first wiring substrate 2A, when the thermoelectric conversion module 101 is provided in a heat source or the like, the first heat transfer metal layers 32A and 32A can be used. Increasing the adhesion between the heat source and the thermoelectric conversion module 101 can improve heat transmission. Therefore, the thermoelectric exchange performance (power generation efficiency) of the thermoelectric conversion module 101 can be improved.

另外，在第1實施型態之接合工程S14中，如圖5及圖6所示般，藉由使用補足構件411～413，至少在線膨脹係數小之一方的熱電轉換元件(P型熱電轉換元件3)，和加壓板401A、401B之間，配置補足構件411～413，補足起因於P型熱電轉換元件3和N型熱電轉換元件4之線膨脹差的熱伸縮差。而且，雖然在一組加壓板401A、401B之間，使各熱電轉換元件3、4和第1配線層11A密接而均勻地加壓，但是接合工程並不限定於此。In addition, in the joining process S14 of the first embodiment, as shown in FIG. 5 and FIG. 6, by using the supplementary members 411 to 413, a thermoelectric conversion element (P-type thermoelectric conversion element having at least one of the smaller online expansion coefficient) is used. 3) Complementary members 411 to 413 are arranged between the pressure plates 401A and 401B to compensate for the thermal expansion difference caused by the linear expansion difference between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4. In addition, although each of the thermoelectric conversion elements 3 and 4 and the first wiring layer 11A are closely adhered and uniformly pressed between a pair of pressure plates 401A and 401B, the joining process is not limited to this.

例如，如圖7所示般，在疊層方向重疊偶數個(在圖7中為2個)挾持體405，並且在疊層方向配同數量的P型熱電轉換元件3和N型熱電轉換元件4，在第1配線層11A和P型熱電轉換元件3及N型熱電轉換元件4之接合時，使各熱電轉換元件3、4和第1配線層11A密接而可以分別均勻地加壓。再者，藉由在各挾持體405、405之間配設具有緩衝性之石墨薄片420，可以在第1配線基板2A之面方向之各熱電轉換元件3、4之配置處，補正各個傾斜，可以更均勻地加壓各熱電轉換元件3、4和第1配線基板2A。For example, as shown in FIG. 7, an even number (two in FIG. 7) of holding bodies 405 are stacked in the stacking direction, and the same number of P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements are stacked in the stacking direction. 4. When the first wiring layer 11A and the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are bonded, each of the thermoelectric conversion elements 3, 4 and the first wiring layer 11A can be closely adhered to each other and can be uniformly pressed. Furthermore, by disposing a graphite sheet 420 having cushioning properties between the holding bodies 405 and 405, it is possible to correct each inclination at the position of each of the thermoelectric conversion elements 3 and 4 in the plane direction of the first wiring substrate 2A. The thermoelectric conversion elements 3 and 4 and the first wiring substrate 2A can be pressed more uniformly.

在此情況下，藉由使在疊層方向鄰接之兩個挾持體405、405之各第1配線基板2A、2A彼此相向配置，可以在第1配線基板2A之面方向之各熱電轉換元件3、4之配置處，分別於疊層方向各配置一個(同數量)P型熱電轉換元件3和N型熱電轉換元件4。藉由如此在疊層方向重疊且配置偶數個挾持體405、405，可以總是重疊且配置同數量P型熱電轉換元件3和N型熱電轉換元件4之中，線膨脹係數小的一方之熱電轉換元件，和線膨脹係數大的另一方之熱電轉換元件，在接合(加熱)時，可以使重疊複數個之挾持體405、405之高度在面方向成為均勻。再者，如上述般，藉由使具有緩衝性之石墨薄片402介於各挾持體405、405之間，可以補正各個傾斜，可以更均勻地加壓各熱電轉換元件3、4和第1配線基板2A。In this case, by arranging the first wiring substrates 2A and 2A of the two holding bodies 405 and 405 adjacent to each other in the stacking direction, the thermoelectric conversion elements 3 in the plane direction of the first wiring substrate 2A can be arranged. At the positions of 4 and 4, one (same number) P-type thermoelectric conversion element 3 and N-type thermoelectric conversion element 4 are arranged in the stacking direction, respectively. By thus overlapping and arranging an even number of holding bodies 405 and 405 in the stacking direction, it is possible to always overlap and arrange the same number of P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 with a smaller linear expansion coefficient of thermoelectricity. When the conversion element and the other thermoelectric conversion element having a large linear expansion coefficient are joined (heated), the heights of the plurality of holding bodies 405 and 405 overlapping each other can be made uniform in the plane direction. In addition, as described above, by interposing the graphite sheet 402 having cushioning properties between the holding bodies 405 and 405, each inclination can be corrected, and the thermoelectric conversion elements 3, 4 and the first wiring can be pressed more uniformly. Substrate 2A.

因此，在一組加壓板401A、01B之間，可以使各熱電轉換元件3、4 和第1配線層11A密接而均勻地加壓，可以確實地接合各熱電轉換元件3、4和第1配線基板2A。再者，藉由如此地疊層複數挾持體405，可以在一次的接合工程S14中，製造複數熱電轉換模組101。Therefore, the thermoelectric conversion elements 3, 4 and the first wiring layer 11A can be tightly and uniformly pressed between a set of pressure plates 401A and 01B, and the thermoelectric conversion elements 3, 4 and the first can be reliably joined. Wiring board 2A. Furthermore, by stacking the plurality of holding bodies 405 in this way, the plurality of thermoelectric conversion modules 101 can be manufactured in a single joining process S14.

再者，在圖1所示之第1實施型態中，雖然設成具有被配設在熱電轉換元件3、4之一端側的第1配線基板2A之構成，但是亦可以如圖8所示之第2實施型態之熱電轉換模組102般，在熱電轉換元件3、4之一端側(在圖8中為下側)配設第1配線基板2A，在另一端側(在圖8中為上側)配設第2配線基板2B。在此情況下，可以經由被相向配置之第1配線基板2A和第2配線基板2B，電性串聯連接P型熱電轉換元件3和N型熱電轉換元件4。In addition, in the first embodiment shown in FIG. 1, although the structure is provided with the first wiring substrate 2A arranged on one end side of the thermoelectric conversion elements 3 and 4, it may also be shown in FIG. 8. Like the thermoelectric conversion module 102 of the second embodiment, a first wiring substrate 2A is disposed on one end side (lower side in FIG. 8) of the thermoelectric conversion elements 3 and 4, and on the other end side (in FIG. 8) Upper side) is provided with the second wiring board 2B. In this case, the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 may be electrically connected in series via the first wiring substrate 2A and the second wiring substrate 2B which are arranged to face each other.

以下，在第2實施型態之熱電轉換模組102中，針對與第1實施型態之熱電轉換模組101共同的要素，賦予相同符號省略說明。被配設在熱電轉換元件3、4之一端側(在圖8中為下側)的第1配線基板2A與第1實施型態相同，省略說明。In the following, in the thermoelectric conversion module 102 according to the second embodiment, the same reference numerals are given to the elements common to the thermoelectric conversion module 101 according to the first embodiment, and the description is omitted. The first wiring substrate 2A disposed on one end side (lower side in FIG. 8) of the thermoelectric conversion elements 3 and 4 is the same as the first embodiment, and description thereof is omitted.

被配設在熱電轉換元件3、4之另一端側(在圖8中為上側)之第2配線基板2B之構成，被設成具有第2配線層12B、12B，和被接合於與第2配線層12B、12B之熱電轉換元件3、4之接合面相反之面的第2陶瓷層21B、21B，和被接合於與第2陶瓷層21B、21B之第2配線層12B、12B之接合面相反之面的第2熱傳達金屬層31B。The configuration of the second wiring substrate 2B disposed on the other end side (upper side in FIG. 8) of the thermoelectric conversion elements 3 and 4 is provided with the second wiring layers 12B and 12B and is bonded to the second wiring layer 12B and 12B. The second ceramic layers 21B and 21B opposite to the bonding surfaces of the thermoelectric conversion elements 3 and 4 of the wiring layers 12B and 12B and the bonding surfaces of the second wiring layers 12B and 12B bonded to the second ceramic layers 21B and 21B. The second heat transfer metal layer 31B on the opposite side.

構成第2配線基板2B之第2陶瓷層21B、21B被分離成複數(在圖8中為2個)，與第1實施型態相同，被獨立形成在每個各熱電轉換元件3、4。再者，各第2陶瓷層21B、21B分別被形成俯視正方向形狀。在第2配線基板2B設置有2個俯視正方形狀之第2配線層12B、12B，並且設置有1個俯視長方形狀之第2熱傳達金屬層31B。第2配線層12B、12B被獨立形成在每個第2陶瓷層21B、21B，個別地被連接於各熱電轉換元件3、4。另外，第2熱傳金屬層31B跨越相鄰的兩第2配線層12B、12B之間而被形成，並且，跨越相鄰的第2陶瓷層21B、21B之間而被形成。The second ceramic layers 21B and 21B constituting the second wiring substrate 2B are separated into a plurality (two in FIG. 8), and are formed in each of the thermoelectric conversion elements 3 and 4 independently as in the first embodiment. In addition, each of the second ceramic layers 21B and 21B is formed into a shape in a positive direction in plan view. The second wiring substrate 2B is provided with two second wiring layers 12B and 12B having a square shape in plan view, and one second heat transfer metal layer 31B having a rectangular shape in plan view is provided. The second wiring layers 12B and 12B are independently formed on each of the second ceramic layers 21B and 21B, and are individually connected to the respective thermoelectric conversion elements 3 and 4. The second heat transfer metal layer 31B is formed across the two adjacent second wiring layers 12B and 12B, and is formed across the adjacent second ceramic layers 21B and 21B.

在第2實施型態之熱電轉換模組102中，藉由相同之金屬材料，將第1配線基板2A之第1配線層11A和第2配線基板2B之第2熱傳金屬層31B形成同形狀(相同厚度，相同平面尺寸)，並且藉由相同之金屬材料，將第1配線基板2A之第1熱傳達金屬層32A、32A和第2配線基板2B之第2配線層12B、12B形成同形狀。而且，第1配線基板2A和第2配線基板2B之構成被設成具有2個陶瓷層(第1陶瓷層21A、21A或第2陶瓷層21B、21B)，和被接合於兩陶瓷層之一方之面的俯視長方形狀之金屬層(第1配線層11A或第2熱傳達金屬層31B)，和被接合於兩陶瓷層之另一方之面，且被獨立形成在各陶瓷層之俯視正方形狀之金屬層(第1熱傳達金屬層32A、32A或第2配線層12B、12B)。即是，兩配線基板2A、2B藉由相同構成之1種類之配線基板而構成。In the thermoelectric conversion module 102 of the second embodiment, the same metal material is used to form the first wiring layer 11A of the first wiring substrate 2A and the second heat transfer metal layer 31B of the second wiring substrate 2B into the same shape. (The same thickness and the same plane size), and the first heat transfer metal layers 32A and 32A of the first wiring substrate 2A and the second wiring layers 12B and 12B of the second wiring substrate 2B are formed in the same shape by the same metal material . In addition, the first wiring substrate 2A and the second wiring substrate 2B are configured to have two ceramic layers (the first ceramic layers 21A, 21A or the second ceramic layers 21B, 21B), and are bonded to one of the two ceramic layers. The rectangular metal layer (the first wiring layer 11A or the second heat transfer metal layer 31B) on the top surface of the surface is bonded to the other surface of the two ceramic layers, and is independently formed on the square shape of each ceramic layer in plan view. Metal layer (the first heat transfer metal layers 32A and 32A or the second wiring layers 12B and 12B). That is, the two wiring substrates 2A and 2B are configured by one type of wiring substrate having the same configuration.

而且，藉由在如此被構成之一組配線基板2A、2B之間，交互串聯連接P型熱電轉換元件3和N型熱電轉換元件4，構成熱電轉換模組102。因此，針對熱電轉換模組102之製造方法，省略說明。Then, the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are alternately and serially connected between a group of the wiring substrates 2A and 2B configured in this manner, thereby forming a thermoelectric conversion module 102. Therefore, a description of the manufacturing method of the thermoelectric conversion module 102 is omitted.

即使在如此被製造的第2實施型態之熱電轉換模組102中，構成各配線基板2A、2B之各陶瓷層21A、21B被獨立形成在每個熱電轉換元件3、4，剛體之陶瓷層21A、21B中之P型熱電轉換元件3和N型熱電轉換元件4之間之連接被分斷。因此，各熱電轉換元件3、4藉由各陶瓷層21A、21B，無隨著熱伸縮的變形被拘束之情形。Even in the thermoelectric conversion module 102 of the second embodiment manufactured in this manner, the ceramic layers 21A and 21B constituting each of the wiring substrates 2A and 2B are independently formed on each of the thermoelectric conversion elements 3 and 4 and the rigid ceramic layer The connection between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 in 21A and 21B is disconnected. Therefore, each of the thermoelectric conversion elements 3 and 4 does not have to be restrained by the thermal expansion and contraction by the ceramic layers 21A and 21B.

再者，僅第1配線基板2A之各第1陶瓷層21A、21A之間藉由第1配線層11A被連結，第2配線基板2B之各第2陶瓷層21B、21B之間藉由第2熱傳達金屬層31B被連結。依此，相鄰的P型熱電轉換元件3和N型熱電轉換元件4之熱伸縮差，可以使連接熱電轉換元件3、4之間的第1配線層11A或第2熱傳達金屬層31B之連接部分變形而吸收尺寸變化。因此，藉由可以抑制熱伸縮差而產生在各熱電轉換元件3、4內之熱應力的發生。而且，可以防止藉由各熱電轉換元件3、4之熱伸縮差，熱電轉換元件3、4從兩配線基板2A、2B(第1配線層11A或第2配線層12B、12B)被剝離，或在熱電轉換元件3、4產生裂紋之情形。因此，可以良好地維持藉由第1配線層11A和第2配線層12B、12B被連接之熱電轉換元件3、4間之電性連接，且可以良好地維持熱電轉換模組102之接合可靠性、熱傳導性及導電性。In addition, only the first ceramic layers 21A and 21A of the first wiring substrate 2A are connected by the first wiring layer 11A, and the second ceramic layers 21B and 21B of the second wiring substrate 2B are connected by the second The heat transfer metal layers 31B are connected. Accordingly, the difference in thermal expansion between adjacent P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 can make the first wiring layer 11A or the second heat transfer metal layer 31B connected between the thermoelectric conversion elements 3 and 4 The connecting portion is deformed to absorb the dimensional change. Therefore, the occurrence of thermal stress in the respective thermoelectric conversion elements 3 and 4 due to the difference in thermal expansion and contraction can be suppressed. Furthermore, it is possible to prevent the thermoelectric conversion elements 3 and 4 from being peeled from the two wiring substrates 2A and 2B (the first wiring layer 11A or the second wiring layers 12B and 12B) due to the difference in the thermal expansion and contraction of the respective thermoelectric conversion elements 3 and 4 or In the case where cracks occur in the thermoelectric conversion elements 3 and 4. Therefore, the electrical connection between the thermoelectric conversion elements 3 and 4 connected through the first wiring layer 11A and the second wiring layers 12B and 12B can be maintained well, and the bonding reliability of the thermoelectric conversion module 102 can be well maintained. , Thermal conductivity and electrical conductivity.

再者，因在各配線基板2A、2B，分別設置有絕緣基板亦即陶瓷層21A、21B，故當在熱源等設置熱電轉換模組102之時，可以藉由陶瓷層21A、21B防止熱源等和第1配線層11A或第2配線層12B、12B接觸之情形。因此，可以確實地迴避熱源等和第1配線層11A或第2配線層12B、12B之電性洩漏，且可以良好地維持絕緣狀態。In addition, since each of the wiring substrates 2A and 2B is provided with an insulating substrate, that is, ceramic layers 21A and 21B, when the thermoelectric conversion module 102 is provided in a heat source or the like, the ceramic layers 21A and 21B can be used to prevent heat sources and the like Contact with the first wiring layer 11A or the second wiring layers 12B and 12B. Therefore, electrical leakage from the heat source or the like and the first wiring layer 11A or the second wiring layers 12B and 12B can be reliably avoided, and the insulation state can be maintained well.

再者，在配線基板2A、2B，設置有第1熱傳達金屬層32A或第2熱傳達金屬31B。因此，當在熱源等配置熱電轉換模組102之時，藉由各熱傳達金屬層32A、31B，可以提高熱源等和熱電轉換模組102之密接性，可以提升熱傳導性。因此，可以提升熱電轉換模組102之熱電交換性能(發電效率)。In addition, the wiring boards 2A and 2B are provided with the first heat transfer metal layer 32A or the second heat transfer metal 31B. Therefore, when the thermoelectric conversion module 102 is arranged on a heat source or the like, the heat transfer metal layers 32A and 31B can improve the adhesion between the heat source and the thermoelectric conversion module 102 and improve the thermal conductivity. Therefore, the thermoelectric conversion performance (power generation efficiency) of the thermoelectric conversion module 102 can be improved.

另外，在圖8所示之第2實施型態中，雖然將一組配線基板2A、2B之雙方設成具有被獨立形成在每個熱電轉換元件3、4之陶瓷層21A、21A或21B、21B的構成，但是並不限定於此。藉由僅將至少一方之配線基板設成具有被獨立形成在每個熱電轉換元件3、4之陶瓷層的構成，可以緩和隨著兩熱電轉換元件3、4之熱伸縮差的尺寸變化，可以防止熱伸縮差所致的熱電轉換元件3、4之裂紋或一組配線基板的剝離等的發生。因此，若在每個熱電轉換元件3、4獨立形成一組配線基板2A、2B中，至少其中之任一方之陶瓷層即可，In addition, in the second embodiment shown in FIG. 8, both sets of wiring substrates 2A and 2B are provided with ceramic layers 21A, 21A, or 21B, which are independently formed on each of the thermoelectric conversion elements 3, 4. The structure of 21B is not limited to this. By providing at least one wiring substrate with a structure in which ceramic layers are independently formed on each of the thermoelectric conversion elements 3 and 4, it is possible to mitigate a change in size due to a difference in thermal expansion and contraction of the two thermoelectric conversion elements 3 and 4. It is possible to prevent cracks in the thermoelectric conversion elements 3 and 4 due to thermal expansion and contraction and peeling of a group of wiring boards. Therefore, if each of the thermoelectric conversion elements 3 and 4 independently forms a set of wiring substrates 2A and 2B, at least one of the ceramic layers may be used.

圖9～圖13表示本發明之第3實施型態之熱電轉換模組103。在第1實施型態及第2實施型態中，雖然藉由組合各1個P型熱電轉換元件3和N型熱電轉換元件4，構成熱電轉換模組102、102，但是亦可以如第3實施型態之熱電轉換模組103般，組合各複數P型熱電轉換元件3和N型熱電轉換元件4，構成大型熱電轉換模組。9 to 13 show a thermoelectric conversion module 103 according to a third embodiment of the present invention. In the first embodiment and the second embodiment, although the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are combined to constitute the thermoelectric conversion modules 102 and 102, the thermoelectric conversion modules 102 and 102 may be configured as in the third embodiment. The thermoelectric conversion module of the implementation type is 103, and a plurality of P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 are combined to form a large-scale thermoelectric conversion module.

第3實施型態之熱電轉換模組103在被相向配置之第1配線基板5A和第2配線基板5B之一組配線基板5A、5B之間，組合複數P型熱電轉換元件3和N型熱電轉換元件4而面狀(二次元)地配列。而且，分別的P型熱電轉換元件3和N型熱電轉換元件4被設成經由上下配線基板5A、5B被電性串聯連接的構成。以下，在第3實施型態之熱電轉換模組103中，針對與第1實施型態之熱電轉換模組101及第2實施型態之熱電轉換模組102共同的要素，賦予相同符號省略說明。The third embodiment of the thermoelectric conversion module 103 combines a plurality of P-type thermoelectric conversion elements 3 and N-type thermoelectricity between the first wiring substrate 5A and the second wiring substrate 5B, which is a group of wiring substrates 5A and 5B, which are oppositely arranged. The conversion elements 4 are arranged in a planar (two-dimensional) manner. The P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are each configured to be electrically connected in series via the upper and lower wiring substrates 5A and 5B. In the following, in the thermoelectric conversion module 103 of the third embodiment, the same symbols as those of the thermoelectric conversion module 101 of the first embodiment and the thermoelectric conversion module 102 of the second embodiment will be given the same reference numerals and descriptions will be omitted. .

第1配線基板5A之構成係如圖9～圖13所示般，被設成具有複數第1配線層11A、12A，和被接合於與第1配線層11A、12A之熱電轉換元件3、4之接合面相反之面之複數第1陶瓷層21A，和被接合於與第1陶瓷層21A之第1配線層11A、12A之接合面相反之面的第1熱傳達金屬層31A。As shown in FIGS. 9 to 13, the structure of the first wiring substrate 5A is provided with a plurality of first wiring layers 11A and 12A and thermoelectric conversion elements 3 and 4 bonded to the first wiring layers 11A and 12A. A plurality of first ceramic layers 21A on opposite sides of the bonding surface and a first heat transfer metal layer 31A bonded on the opposite side to the bonding surfaces of the first wiring layers 11A and 12A of the first ceramic layer 21A.

再者，第2配線基板5B之構成如圖9、圖12及圖13所示般，被設成第2配線層11B、被接合於與第2配線層11B之熱電轉換元件3、4之接合面相反之面的複數第2陶瓷層21B，和被接合於與第2陶瓷層21B之第2配線層11B之接合面相反之面的第2熱傳達金屬層31B、32B。The configuration of the second wiring substrate 5B is as shown in FIGS. 9, 12, and 13. The second wiring layer 5B is provided as the second wiring layer 11B and is bonded to the thermoelectric conversion elements 3 and 4 bonded to the second wiring layer 11B. The plurality of second ceramic layers 21B on opposite sides and the second heat transfer metal layers 31B and 32B bonded to the opposite side from the bonding surface of the second wiring layer 11B of the second ceramic layer 21B.

構成各配線基板5A、5B之陶瓷層21A、21B與第1實施型態相同，被獨立形成在每個各熱電轉換元件3、4。另外，在熱電轉換模組103設置有各7個P型熱電轉換元件3和N型熱電轉換元件4，設置合計14個熱電轉換元件。而且，在各配線基板5A、5B，分別設置有較熱電轉換元件3、4之個數多，各16個陶瓷層21A、21B。The ceramic layers 21A and 21B constituting the respective wiring substrates 5A and 5B are the same as those in the first embodiment, and are independently formed on each of the thermoelectric conversion elements 3 and 4. In addition, the thermoelectric conversion module 103 is provided with seven P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 each, and a total of 14 thermoelectric conversion elements are provided. Further, each of the wiring substrates 5A and 5B is provided with a larger number of thermoelectric conversion elements 3 and 4 and 16 ceramic layers 21A and 21B each.

再者，第1配線基板5A之各第1陶瓷層21A之間，藉由第1配線層11A或第1熱傳達金屬層31A中之任一者被連結，一體地設置構成第1配線基板5A之複數第1陶瓷層21A。另外，第2配線基板5B之各第2陶瓷層21B之間，藉由第2配線層11B或第2熱傳達金屬層31B中之任一者被連結，一體地設置構成第2配線基板5B之複數第2陶瓷層21B。In addition, between the first ceramic layers 21A of the first wiring substrate 5A, either the first wiring layer 11A or the first heat transfer metal layer 31A is connected to form a first wiring substrate 5A integrally. The plurality of first ceramic layers 21A. In addition, between the second ceramic layers 21B of the second wiring substrate 5B, either the second wiring layer 11B or the second heat transfer metal layer 31B is connected, and the second wiring substrate 5B constituting the second wiring substrate 5B is integrally provided. The plurality of second ceramic layers 21B.

被配設在圖9之下側的第1配線基板5A，如圖10所示般，設置有7個俯視長方形狀之第1配線層11A，2個俯視正方形狀之第1配線層12A，並且如圖11所示般，設置8個俯視長方形狀之第1傳達金屬層31A。再者，在被配設在圖9之上側的第2配線基板5B，如圖12所示般，設置8個俯視長方形狀之第2配線層11B，並且如圖13所示般設置7個俯視長方形狀之第2熱傳達金屬層31B，和設置2個俯視正方形狀之第2熱傳達金屬層32B。As shown in FIG. 10, the first wiring substrate 5A disposed on the lower side of FIG. 9 is provided with seven first wiring layers 11A having a rectangular shape in plan view and two first wiring layers 12A having a square shape in plan view, and As shown in FIG. 11, eight first transmission metal layers 31A having a rectangular shape in plan view are provided. Furthermore, as shown in FIG. 12, the second wiring substrate 5B disposed on the upper side of FIG. 9 is provided with eight second wiring layers 11B having a rectangular shape in plan view, and seven plan views are provided as shown in FIG. 13. A rectangular second heat transfer metal layer 31B and two square second heat transfer metal layers 32B are provided in plan view.

第1配線層5A之第1配線層11A係連接相鄰的P型熱電轉換元件3和N型熱電轉換元件4之間而被形成，並且，跨越兩熱電轉換元件3、4之第1陶瓷層21A、21A彼此之間而被形成。另外，第1配線層12A僅獨立形成在無形成有第1配線層11A之第1陶瓷層21A。再者，第1熱傳金屬層31A跨越相鄰的兩第1配線層11A、11A之間被形成，並且，跨越相鄰的第1陶瓷層21A、21A之間而被形成。The first wiring layer 11A of the first wiring layer 5A is formed by connecting the adjacent P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 and spans the first ceramic layer of the two thermoelectric conversion elements 3 and 4. 21A and 21A are formed between each other. The first wiring layer 12A is independently formed only on the first ceramic layer 21A where the first wiring layer 11A is not formed. In addition, the first heat transfer metal layer 31A is formed across the two adjacent first wiring layers 11A and 11A, and is formed across the adjacent first ceramic layers 21A and 21A.

再者，第2配線層5B之第2配線層11B係連接相鄰的P型熱電轉換元件3和N型熱電轉換元件4之間而被形成，並且，跨越兩熱電轉換元件3、4之第2陶瓷層21B、21B彼此之間而被形成。再者，第2熱傳金屬層31B跨越相鄰的兩第2配線層11B、11B之間被形成，並且，跨越相鄰的第2陶瓷層21B、21B之間而被形成。另外，第2熱傳達金屬層32B僅獨立形成在無形成有第2熱傳達金屬層32B之第2陶瓷層21B。In addition, the second wiring layer 11B of the second wiring layer 5B is formed by connecting the adjacent P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 and spans the first and second thermoelectric conversion elements 3 and 4. The 2 ceramic layers 21B and 21B are formed between each other. The second heat transfer metal layer 31B is formed across the two adjacent second wiring layers 11B and 11B and is formed across the adjacent second ceramic layers 21B and 21B. The second heat transfer metal layer 32B is independently formed only on the second ceramic layer 21B in which the second heat transfer metal layer 32B is not formed.

再者，第1配線基板5A之第1配線層11A和第2配線基板5B之第2熱傳達金屬層31B藉由相同之金屬材料被形成同形狀(相同厚度，相同平面尺寸)。再者，第1配線基板5A之第1配線層12A和第2熱傳達金屬層32B，藉由相同之金屬材料被形成同形狀。再者，第1配線基板5A之第1熱傳達金屬層31A和第2配線基板5B之第2配線層11B，藉由相同之金屬材料被形成同形狀。如此一來，第1配線基板5A和第2配線基板5B藉由相同構成之1種類配線基板被構成。而且，藉由在如此被構成之一組配線基板5A、5B之間，交互串聯連接P型熱電轉換元件3和N型熱電轉換元件4，構成熱電轉換模組103。Furthermore, the first wiring layer 11A of the first wiring substrate 5A and the second heat transfer metal layer 31B of the second wiring substrate 5B are formed into the same shape (the same thickness and the same planar size) by the same metal material. The first wiring layer 12A and the second heat transfer metal layer 32B of the first wiring substrate 5A are formed into the same shape by the same metal material. The first heat transfer metal layer 31A of the first wiring substrate 5A and the second wiring layer 11B of the second wiring substrate 5B are formed into the same shape by the same metal material. In this way, the first wiring substrate 5A and the second wiring substrate 5B are configured by the same type of wiring substrate. Then, the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are alternately and serially connected between a group of the wiring substrates 5A and 5B configured in this manner to constitute a thermoelectric conversion module 103.

接著，針對構成如此之熱電轉換模組103之製造方法予以說明。第3實施型態之熱電轉換模組之製造方法藉由與第1實施型態之熱電轉換模組之製造方法之流程相同的流程而構成。因此，即使針對第3實施型態之熱電轉換模組之製造方法，使用圖2之流程圖進行說明。再者，由於第1配線基板5A和第2配線基板5B係藉由相同構成之1種類的配線基板而構成，故在工程S11～S13中，省略第2配線基板5B之製造工程的說明，僅針對第1配線基板5A之製造工程予以說明。Next, a manufacturing method of such a thermoelectric conversion module 103 will be described. The method for manufacturing a thermoelectric conversion module according to the third embodiment is configured by the same process as that of the method for manufacturing a thermoelectric conversion module according to the first embodiment. Therefore, the manufacturing method of the thermoelectric conversion module according to the third embodiment will be described using the flowchart of FIG. 2. In addition, since the first wiring substrate 5A and the second wiring substrate 5B are constituted by one type of wiring substrate having the same structure, the description of the manufacturing process of the second wiring substrate 5B is omitted in the processes S11 to S13, and only The manufacturing process of the first wiring board 5A will be described.

(切割線形成工程) 　　首先，如圖14A及圖14B所示般，在構成第1陶瓷層21A之大型陶瓷母材205，形成用以分割複數陶瓷層21A之切割線202a、202b，在陶瓷母材205區劃複數(16個)第1陶瓷層形成區域203(切割線形成工程S11)。圖14A係將形成第1配線層11A、12A之陶瓷母材205之一方之面朝向表側而配置的陶瓷母材205之俯視圖，圖14B係表示將形成第1熱傳達金屬層31A之陶瓷母材205之另一方之面朝向表側而配置的陶瓷母材205之俯視圖。(Cut line forming process) First, as shown in FIGS. 14A and 14B, the large ceramic base material 205 constituting the first ceramic layer 21A is formed with cutting lines 202a and 202b for dividing the plurality of ceramic layers 21A. The material 205 is divided into a plurality (16) of first ceramic layer forming regions 203 (cut line forming process S11). 14A is a plan view of a ceramic base material 205 in which one side of the ceramic base material 205 forming the first wiring layers 11A and 12A faces the front side, and FIG. 14B is a ceramic base material showing the first heat transfer metal layer 31A. A plan view of a ceramic base material 205 with the other side of 205 facing the front side.

在陶瓷母材205之一方之面，如圖14A所示般，以通過第1配線層11A、12A之接合預定區域之間之方式，形成在除第1配線層11A、12A之接合預定區域之外的非接合部，形成切割線202b。具體而言，在陶瓷母材205之橫向形成以貫通相向的邊彼此之直線所形成的2條切割線202b。On one side of the ceramic base material 205, as shown in FIG. 14A, it is formed between the predetermined bonding areas of the first wiring layers 11A and 12A so as to pass through the bonding areas of the first wiring layers 11A and 12A. The outer non-joint portion forms a cutting line 202b. Specifically, two cutting lines 202b are formed in the lateral direction of the ceramic base material 205 so as to pass through the opposing sides.

另外，在陶瓷母材205之另一方之面，如圖14B所示般，以通過第1熱傳達金屬層31A之接合預定區域之間之方式，形成在除第1熱傳達金屬層31A之接合預定區域之外的非接合部，形成切割線202a、202b。具體而言，在貫通在陶瓷母材205之縱向形成以貫通相向的邊彼此之直線所形成的3條切割線202a，和在陶瓷母材205之橫向形成以貫通相向的邊彼此之直線所形成的1條切割線202b。In addition, as shown in FIG. 14B, the other surface of the ceramic base material 205 is formed between the areas to be joined by the first heat transfer metal layer 31A, except for the first heat transfer metal layer 31A. Cutting lines 202a and 202b are formed at non-joined portions outside the predetermined area. Specifically, three cutting lines 202a formed by straight lines passing through the ceramic base material 205 in the longitudinal direction so as to penetrate the opposing sides and formed by straight lines passing through the mutually opposing sides in the ceramic base material 205 in the transverse direction are formed. 1 cutting line 202b.

如此一來，藉由在陶瓷母材205之一方之面和另一方之面形成切割線202a、202b，可以在陶瓷母材205之縱向以等間隔形成3條切割線202a，並且在橫向以等間隔形成3條切割線202b，形成切割線202a、202b在縱橫各3條的格子狀。該些6條切割線202a、202b，在陶瓷母材205，以在縱橫各4個整齊排列被區劃成第1陶瓷層21A之外形形狀之大小的16個第1陶瓷層形成區域203而形成。In this way, by forming the cutting lines 202a and 202b on one side and the other side of the ceramic base material 205, three cutting lines 202a can be formed at equal intervals in the longitudinal direction of the ceramic base material 205, and in the horizontal direction. Three cutting lines 202b are formed at intervals, and a grid shape having three cutting lines 202a and 202b each in the vertical and horizontal directions is formed. The six cutting lines 202a and 202b are formed on the ceramic base material 205 in four neatly arranged four vertical and horizontal directions, and are divided into sixteen first ceramic layer forming regions 203 having a size outside the first ceramic layer 21A.

另外，切割線202a、202b並非僅形成在第1配線層11A、12A之非接合部及第1熱傳達金屬層31A之非接合部，亦形成在第1配線11A之接合部及第1熱傳達金屬層31A之接合部，亦可以形成在陶瓷母材205之兩面。In addition, the cutting lines 202a and 202b are formed not only at the non-joined portions of the first wiring layers 11A and 12A and the non-joined portions of the first heat transfer metal layer 31A, but also at the joints and the first heat transfer of the first wiring 11A The joint portions of the metal layer 31A may be formed on both surfaces of the ceramic base material 205.

(金屬層形成工程) 　　於切割線形成工程S11後，如圖15A所示般，在陶瓷母材205之一方之面形成第1配線層11A、12A，如圖15B所示般，在陶瓷母材205之另一方之面形成第1熱傳達金屬層31A，在陶瓷母材205之兩面形成接合第1配線層11A、12A和第1熱傳達金屬層31A之疊層體206(金屬層形成工程S12)。(Metal layer formation process) After the cutting line formation process S11, as shown in FIG. 15A, first wiring layers 11A and 12A are formed on one side of the ceramic base material 205, as shown in FIG. 15B. A first heat transfer metal layer 31A is formed on the other side of 205, and a laminated body 206 (metal layer forming process S12) joining the first wiring layers 11A and 12A and the first heat transfer metal layer 31A is formed on both sides of the ceramic base material 205. ).

雖然省略詳細說明，但是在陶瓷母材205之一方之面接合成為第1配線層11A、12A之金屬板，並且在陶瓷母材205之另一方之面接合成為第1熱傳達金屬層31A之金屬板之後，藉由施予蝕刻處理，在陶瓷母材205之一方之面圖案製作第1配線層11A、12A，並且，在陶瓷母材205之另一方之面圖案製作第1熱傳達金屬層31A。此時，因切割線202a、202b形成在除第1配線層11A、11B之接合預定區域之外的非接合部和除第1熱傳達金屬層31A之接合預定區域之外的非接合部，故被重疊形成在切割線202a、202b之金屬層部分(金屬板)被除去，可以使切割線202a、202b之全體露出。Although the detailed description is omitted, the metal plate forming the first wiring layers 11A and 12A is bonded to one surface of the ceramic base material 205, and the metal forming the first heat transfer metal layer 31A is bonded to the other surface of the ceramic base material 205. After the board is etched, first wiring layers 11A and 12A are patterned on one side of the ceramic base material 205, and first heat transfer metal layers 31A are patterned on the other side of the ceramic base material 205. . At this time, the dicing lines 202a and 202b are formed in the non-joined portion other than the planned bonding area of the first wiring layers 11A and 11B and the non-joined portion other than the planned bonding area of the first heat transfer metal layer 31A. The metal layer portions (metal plates) overlapped and formed on the cutting lines 202a and 202b can be removed, and the entire cutting lines 202a and 202b can be exposed.

另外，第1配線層11A、12A及第1熱傳達金屬層31A藉由將事先被圖案製作之金屬板接合於陶瓷母材205，不用施予蝕刻處理亦可以形成。再者，第1配線層11A、12A亦可以藉由銀(Ag)之燒結體構成。The first wiring layers 11A and 12A and the first heat transfer metal layer 31A can be formed by bonding a metal plate patterned in advance to a ceramic base material 205 without applying an etching treatment. The first wiring layers 11A and 12A may be formed of a sintered body of silver (Ag).

(分割工程) 　　於金屬層形成工程S12之後，藉由以在形成有切割線202a、202b之面側成為凸之方式，彎曲陶瓷母材205，沿著切割線202a、202b分割疊層體206之陶瓷母材205，使第1陶瓷層形成區域203個片化成各個第1陶瓷層21A。依此，形成接合第1配線層11A、12A，和第1陶瓷層21A，和第1熱傳達金屬層31A的第1配線基板5A(分割工程S13)。(Segmentation process) After the metal layer formation process S12, the ceramic base material 205 is bent so as to be convex on the side where the cutting lines 202a and 202b are formed, and the laminated body 206 is divided along the cutting lines 202a and 202b. In the ceramic base material 205, 203 pieces of the first ceramic layer forming region are formed into individual first ceramic layers 21A. Accordingly, a first wiring substrate 5A is formed by joining the first wiring layers 11A and 12A, the first ceramic layer 21A, and the first heat transfer metal layer 31A (dividing process S13).

因切割線202a、202b被形成在第1配線層11A或第1熱傳達金屬層31A之接合面之相反側，故可以沿著切割線202a、202b容易分割陶瓷母材205。再者，因切割線202a、202b係以貫通陶瓷母材205之相向的邊彼此的單純直線所形成，故可以沿著切割線202a、202b圓滑地分割陶瓷母材205。另外，第2配線基板5B係藉由與第1配線基板5A同樣的工程而被製造。Since the cutting lines 202a and 202b are formed on the opposite sides of the bonding surface of the first wiring layer 11A or the first heat transfer metal layer 31A, the ceramic base material 205 can be easily divided along the cutting lines 202a and 202b. In addition, since the cutting lines 202a and 202b are formed by simple straight lines penetrating the opposing sides of the ceramic base material 205, the ceramic base material 205 can be smoothly divided along the cutting lines 202a and 202b. The second wiring board 5B is manufactured by the same process as the first wiring board 5A.

如此被形成的第1配線基板5A雖然具有複數第1配線11A、12A，但是成為藉由第1熱傳達金屬層31A，連結各第1配線層11A、11A或11A、12A之間的狀態。再者，因被個片化的第1陶瓷層21A藉由第1配線層11A或第1熱傳達金屬層31A被連結，故在第1配線基板5A中，可以一體地處理第1配線層11A、12A、第1陶瓷層21A、第1熱傳達金屬層31A。再者，被構成與第1配線基板5A相同的第2配線基板5B，也可以一體地處理第2配線層11B、第2陶瓷層21B、第2熱傳達金屬層31B、32B。Although the first wiring substrate 5A thus formed includes the plurality of first wirings 11A and 12A, it is in a state where the first wiring layers 11A, 11A, or 11A, 12A are connected by the first heat transfer metal layer 31A. Furthermore, since the first ceramic layer 21A, which is formed into pieces, is connected by the first wiring layer 11A or the first heat transfer metal layer 31A, the first wiring layer 11A can be integrally processed in the first wiring substrate 5A. 12A, first ceramic layer 21A, and first heat transfer metal layer 31A. In addition, the second wiring substrate 5B configured as the first wiring substrate 5A may integrally process the second wiring layer 11B, the second ceramic layer 21B, and the second heat transfer metal layers 31B and 32B.

(接合工程) 　　接著，在一方之第1配線基板5A之第1配線層11A，接合P型熱電轉換元件3之一方之端面和N型熱電轉換元件4之一方之端面，並且在另一方之第2配線基板5B之第2配線層11B接合P型熱電轉換元件3之另一方之端麵和N型熱電轉換元件4之另一方之端面(接合工程S14)。依此，如圖9所示般，製造在兩配線基板5A、5B之間，交互串聯連接P型熱電轉換元件3和N型熱電轉換元件4的熱電轉換模組103。(Joining process) Next, the first wiring layer 11A of one first wiring substrate 5A is bonded to the end face of one of the P-type thermoelectric conversion elements 3 and the end face of one of the N-type thermoelectric conversion elements 4 and to the other side. The second wiring layer 11B of the 2 wiring substrate 5B is bonded to the other end surface of the P-type thermoelectric conversion element 3 and the other end surface of the N-type thermoelectric conversion element 4 (bonding process S14). Accordingly, as shown in FIG. 9, a thermoelectric conversion module 103 in which the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are alternately connected in series between the two wiring substrates 5A and 5B is manufactured.

具體而言，各配線層11A、11B，和P型熱電轉換元件3及N型熱電轉換元件4之接合，藉由使用糊膏或硬焊材之接合，根據施加荷重的固相擴散接合等進行接合。而且，與圖5～圖7所示之第1實施型態之熱電轉換模組101相同，在一組加壓板401A、401B之間，使各熱電轉換元件3、4和第1配線層11A、11B密接而均勻地加壓而進行。Specifically, the wiring layers 11A and 11B are bonded to the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 by bonding using a paste or a brazing material, and performing solid-phase diffusion bonding by applying a load. Join. In addition, similar to the thermoelectric conversion module 101 of the first embodiment shown in FIGS. 5 to 7, the thermoelectric conversion elements 3 and 4 and the first wiring layer 11A are arranged between a set of pressure plates 401A and 401B. And 11B are tightly and uniformly pressurized.

雖然省略圖示，但是在該接合工程S14中，可以與第1實施型態相同使補足構件，或在疊層方向重疊配置偶數個挾持體而進行。依此，在第1配線層11A、11B和P型熱電轉換元件3及N型熱電轉換元件4之接合時，可以使各熱電轉換元件3、4和第1配線層11A、11B密接而分別均勻地加壓。再者，藉由在疊層方向重疊配置偶數個挾持體之情況，藉由先在各挾持體之間配設具有緩衝性之石墨薄片，可以在兩配線基板5A、5B之面方向之各熱電轉換元件3、4之配置處，補正各個傾斜，可以更均勻地加壓各熱電轉換元件3、4和兩配線基板5A、5B。Although illustration is omitted, in this joining process S14, it is possible to carry out the supplementary member in the same manner as in the first embodiment, or to arrange an even number of holders in the stacking direction. According to this, when the first wiring layers 11A and 11B are bonded to the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4, each of the thermoelectric conversion elements 3 and 4 and the first wiring layers 11A and 11B can be closely adhered to each other and uniform.地 压 压。 Ground pressure. Furthermore, in the case where an even number of holders are arranged in the stacking direction, by first disposing a graphite sheet having cushioning properties between the holders, each thermoelectricity in the plane direction of the two wiring substrates 5A and 5B can be achieved. Where the conversion elements 3 and 4 are arranged, each inclination is corrected to more uniformly pressurize the thermoelectric conversion elements 3 and 4 and the two wiring substrates 5A and 5B.

另外，如上述般，雖然第1配線基板5A具有複數第1配線層11A、12A，但是因各第1配線層11A、12A之間藉由第1熱傳達金屬層31A被連結，故可以一體地處理各第1配線層11A、12A，可以容易地處理第1配線基板5A。同樣地，第2配線基板5B雖然具有複數第2配線層11B，但是因各第2配線層11B之間藉由第2熱傳達金屬層31B被連結，故可以一體地處理各第2配線層11B，可以容易地處理第2配線基板5B。In addition, as described above, although the first wiring substrate 5A includes a plurality of first wiring layers 11A and 12A, the first wiring layers 11A and 12A are connected by the first heat transfer metal layer 31A, so that they can be integrally formed. By processing the first wiring layers 11A and 12A, the first wiring substrate 5A can be easily processed. Similarly, although the second wiring substrate 5B includes a plurality of second wiring layers 11B, the second wiring layers 11B are connected by the second heat transfer metal layer 31B, so that the second wiring layers 11B can be processed integrally. The second wiring board 5B can be easily processed.

再者，如第3實施型態之製造方法般，藉由在大型的陶瓷母材205形成第1配線層11A、12A和第1熱傳達金屬層31A之後，沿著切割線202a、202b分割陶瓷母材205，可以容易形成具有被配列成特定圖案之第1配線層11A、12A，和被個片化之第1陶瓷層21A的第1配線基板5A。而且，藉由使用該第1配線基板5A，可以容易製造接合(搭載)多數熱電轉換元件3、4之大型的熱電轉換模組103。Furthermore, as in the manufacturing method of the third embodiment, the first wiring layers 11A, 12A and the first heat transfer metal layer 31A are formed on the large ceramic base material 205, and then the ceramic is divided along the cutting lines 202a and 202b. The base material 205 can easily form the first wiring substrate 5A having the first wiring layers 11A and 12A arranged in a specific pattern and the first ceramic layer 21A formed into individual pieces. Furthermore, by using this first wiring substrate 5A, it is possible to easily manufacture a large-sized thermoelectric conversion module 103 to which a large number of thermoelectric conversion elements 3 and 4 are bonded (mounted).

再者，即使在如此被製造的第3實施型態之熱電轉換模組103中，構成第1配線基板5A之各第1陶瓷層21A被獨立形成在每個熱電轉換元件3、4，剛體之第1陶瓷層21A中之P型熱電轉換元件3和N型熱電轉換元件4之間之連接被分斷。即使針對與第1配線基板5A相向配置之第2配線基板5B，各第2陶瓷層21B被獨立形成在每個熱電轉換元件3、4，在剛體之第2陶瓷層21B中之P型熱電轉換元件3和N型熱電轉換元件4之間的連接被分斷。因此，各熱電轉換元件3、4藉由各陶瓷層21A、21B，無隨著熱伸縮的變形被拘束之情形。Furthermore, even in the thermoelectric conversion module 103 of the third embodiment manufactured as described above, each of the first ceramic layers 21A constituting the first wiring substrate 5A is independently formed on each of the thermoelectric conversion elements 3, 4 and the rigid body. The connection between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 in the first ceramic layer 21A is disconnected. Even for the second wiring substrate 5B disposed opposite to the first wiring substrate 5A, each of the second ceramic layers 21B is independently formed in each of the thermoelectric conversion elements 3 and 4, and a P-type thermoelectric conversion in the rigid second ceramic layer 21B The connection between the element 3 and the N-type thermoelectric conversion element 4 is broken. Therefore, each of the thermoelectric conversion elements 3 and 4 does not have to be restrained by the thermal expansion and contraction by the ceramic layers 21A and 21B.

再者，僅各第1陶瓷層21A之間藉由第1配線層11A或第1熱傳達金屬層31A中之任一者被連結，僅第2陶瓷層21B之間藉由第2配線11B或第2熱傳達金屬層31B中之任一者被連結。依此，相鄰的P型熱電轉換元件3和N型熱電轉換元件4之熱伸縮差，可以使連接熱電轉換元件3、4之間的第1配線層11A或第1熱傳達金屬層31A之連接部分、第2配線層11B或第2熱傳達金屬層31B之連接部分變形而吸收尺寸變化。因此，可以抑制藉由熱伸縮差而產生在各熱電轉換元件3、4內之熱應力的發生。而且，可以防止藉由各熱電轉換元件3、4之熱伸縮差，熱電轉換元件3、4從配線基板5A、5B(第1配線層11A、12A、第2配線層11B)被剝離，或在熱電轉換元件3、4產生裂紋之情形。因此，可以良好地維持藉由第1配線層11A、12A和第2配線層11B被連接之熱電轉換元件3、4間之電性連接，且可以良好地維持熱電轉換模組103之接合可靠性、熱傳導性及導電性。In addition, only the first ceramic layers 21A are connected by either the first wiring layer 11A or the first heat transfer metal layer 31A, and only the second ceramic layers 21B are connected by the second wiring 11B or Any one of the second heat transfer metal layers 31B is connected. Accordingly, the difference in thermal expansion between the adjacent P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4 enables the first wiring layer 11A or the first heat transfer metal layer 31A to be connected between the thermoelectric conversion elements 3 and 4. The connection portion, the connection portion of the second wiring layer 11B, or the second heat transfer metal layer 31B is deformed to absorb a dimensional change. Therefore, it is possible to suppress the occurrence of thermal stress in the thermoelectric conversion elements 3 and 4 due to the difference in thermal expansion and contraction. In addition, it is possible to prevent the thermoelectric conversion elements 3 and 4 from being peeled from the wiring substrates 5A and 5B (the first wiring layers 11A and 12A and the second wiring layer 11B) due to the difference in the thermal expansion and contraction of the respective thermoelectric conversion elements 3 and 4. There are cases where cracks occur in the thermoelectric conversion elements 3 and 4. Therefore, the electrical connection between the thermoelectric conversion elements 3 and 4 connected through the first wiring layers 11A and 12A and the second wiring layer 11B can be maintained well, and the bonding reliability of the thermoelectric conversion module 103 can be maintained well. , Thermal conductivity and electrical conductivity.

再者，因在各配線基板5A、5B，分別設置有絕緣基板亦即陶瓷層21A或21B，故當在熱源等設置熱電轉換模組103之時，可以藉由陶瓷層21A或21B防止熱源等和配線層11A、12A或11B接觸之情形。因此，可以確實地迴避熱源等和配線層11A、12A或11B之電性洩漏，且可以良好地維持絕緣狀態。In addition, since each of the wiring substrates 5A and 5B is provided with an insulating substrate, that is, a ceramic layer 21A or 21B, when the thermoelectric conversion module 103 is provided in a heat source or the like, the ceramic layer 21A or 21B can be used to prevent heat sources, etc. Contact with wiring layer 11A, 12A, or 11B. Therefore, electrical leakage from the heat source and the like and the wiring layers 11A, 12A, or 11B can be reliably avoided, and the insulation state can be maintained well.

再者，因在配線基板5A、5B，設置有熱傳達金屬層31A或31B、32B，故當在熱源等設置熱電轉換模組103之時，藉由熱傳達金屬層31A、31B、32B，可以提高熱源等和熱電轉換模組103之密接性，可以提升導傳達性。因此，可以提升熱電轉換模組103之熱電交換性能(發電效率)。Furthermore, since the heat transfer metal layers 31A, 31B, and 32B are provided on the wiring substrates 5A and 5B, when the thermoelectric conversion module 103 is provided in a heat source or the like, the heat transfer metal layers 31A, 31B, and 32B can be used. Increasing the tightness between the heat source and the thermoelectric conversion module 103 can improve the conductivity. Therefore, the thermoelectric conversion performance (power generation efficiency) of the thermoelectric conversion module 103 can be improved.

在上述實施型態之熱電轉換模組101、102、103中，雖然將第1配線基板2A、5A和第2配線基板2B、5B設成具有獨立形成在每個熱電轉換元件3、4之複數第1陶瓷層21A或第2陶瓷層21B之構成，但是即使設成如圖16A～圖18B所示之第1配線基板6A～6C般，設成具有被分離在複數個熱電轉換元件3、4之每個上，且在任一的P型熱電轉換元件3和N型熱電轉換元件4之間被分離的第1陶瓷層22A～22C的構成亦可。In the thermoelectric conversion modules 101, 102, and 103 of the above-mentioned embodiment, although the first wiring substrates 2A, 5A and the second wiring substrates 2B, 5B are provided to have a plurality of independently formed in each thermoelectric conversion element 3, 4 Although the structure of the first ceramic layer 21A or the second ceramic layer 21B is provided as the first wiring substrates 6A to 6C shown in FIGS. 16A to 18B, it is provided to have a plurality of thermoelectric conversion elements 3 and 4 separated. The structure of each of the first ceramic layers 22A to 22C separated between each of the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 may be configured.

例如，圖16A及圖16B所示之第1配線基板6A具有與第2實施型態之熱電轉換模組103之第1配線基板5A相同之第1配線層11A、12A和第1熱傳達金屬層31A所構成之圖案。但是，第1陶瓷層22A被分離在相鄰之一組(2個)之熱電轉換元件3、4，藉由合計8個第1陶瓷層22A被構成。而且，如圖16A所示般，各第1陶瓷層22A、22A之間，藉由第1配線層11A被連結，一體地設置構成第1配線基板6A之複數第1陶瓷層22A。再者，第1配線層6A之第1配線層11A係連接一組P型熱電轉換元件3和N型熱電轉換元件4之間而被形成，並且，跨越兩熱電轉換元件3、4之第1陶瓷層22A、22A彼此之間而被形成。For example, the first wiring substrate 6A shown in FIGS. 16A and 16B has the same first wiring layers 11A, 12A, and a first heat transfer metal layer as the first wiring substrate 5A of the thermoelectric conversion module 103 of the second embodiment. 31A pattern. However, the first ceramic layer 22A is separated from the adjacent one (two) thermoelectric conversion elements 3 and 4 and is configured by a total of eight first ceramic layers 22A. As shown in FIG. 16A, the first ceramic layers 22A and 22A are connected to each other via the first wiring layer 11A, and a plurality of first ceramic layers 22A constituting the first wiring substrate 6A are integrally provided. In addition, the first wiring layer 11A of the first wiring layer 6A is formed by connecting a group of P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 and spans the first of the two thermoelectric conversion elements 3 and 4. The ceramic layers 22A and 22A are formed between each other.

即使在使用如此被構成之第1配線基板6A之熱電轉換模組中，剛體之第1陶瓷層22A在任一的P型熱電轉換元件3和N型熱電轉換元件4之間被分斷，設置有複數。因此，在該些P型熱電轉換元件3和N型熱電轉換元件4之間，藉由互相被接合於對方側之第1陶瓷層22A，無隨著P型熱轉換元件3和N型熱電轉換元件4之熱伸縮的變形被拘束之情形。再者，在各第1陶瓷層22A之分離部分的P型熱電轉換元件3和N型熱電轉換元件4之熱伸縮差，可以使連接熱電轉換元件3、4之間的第1配線層11A之連接部分變形而吸收尺寸變化。因此，可以抑制藉由各熱電轉換元件3、4之熱伸縮差而產生在各熱電轉換元件3、4內之熱應力的發生。Even in the thermoelectric conversion module using the first wiring substrate 6A configured as described above, the first ceramic layer 22A of the rigid body is divided between any of the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 and is provided. plural. Therefore, the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are bonded to each other by the first ceramic layer 22A on the opposite side. The thermal expansion and contraction of the element 4 is restricted. Furthermore, the difference in thermal expansion and contraction between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 in the separation portion of each of the first ceramic layers 22A allows the first wiring layer 11A to The connecting portion is deformed to absorb the dimensional change. Therefore, it is possible to suppress the occurrence of thermal stress in the respective thermoelectric conversion elements 3 and 4 due to the thermal expansion difference of the respective thermoelectric conversion elements 3 and 4.

另外，可以使第1陶瓷層之個數較圖16A及圖16B所示之第1配線基板6A更少。例如，圖17A及圖17B所示之第1配線基板6B之第1陶瓷層22B被分離在4個熱電轉換元件3、4之每個，藉由合計4個第1陶瓷層22B被構成。再者，圖18A及圖18B所示之第1配線基板6C之第1陶瓷層22C被分離在8個熱電轉換元件3、4之每個，藉由合計2個第1陶瓷層22C被構成。In addition, the number of the first ceramic layers can be made smaller than that of the first wiring substrate 6A shown in FIGS. 16A and 16B. For example, the first ceramic layer 22B of the first wiring substrate 6B shown in FIGS. 17A and 17B is separated from each of the four thermoelectric conversion elements 3 and 4 and is configured by a total of four first ceramic layers 22B. In addition, the first ceramic layer 22C of the first wiring substrate 6C shown in FIGS. 18A and 18B is separated from each of the eight thermoelectric conversion elements 3 and 4 and is configured by a total of two first ceramic layers 22C.

如此一來，藉由在任一的P型熱電轉換元件3和N型熱電轉換元件4之間，分斷設置被複數設置的第1陶瓷層22B、22C，在該些P型熱電轉換元件3和N型熱電轉換元件4之間，藉由互相被接合於對方側之第1陶瓷層22B、22C，無隨著P型熱電轉換元件3和N型熱電轉換元件4之熱伸縮的變形被拘束之情形。再者，在各第1陶瓷層22B、22C之分離部分的P型熱電轉換元件3和N型熱電轉換元件4之熱伸縮差，可以使連接熱電轉換元件3、4之間的第1配線層11A之連接部分變形而吸收尺寸變化。因此，可以抑制藉由各熱電轉換元件3、4之熱伸縮差而產生在各熱電轉換元件3、4內之熱應力的發生。In this way, a plurality of first ceramic layers 22B and 22C are provided between each of the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4, and the P-type thermoelectric conversion elements 3 and The N-type thermoelectric conversion elements 4 are bonded to each other by the first ceramic layers 22B and 22C, and there is no restriction on the deformation caused by the thermal expansion and contraction of the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4. situation. Furthermore, the difference in thermal expansion between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 in the separation portion of each of the first ceramic layers 22B and 22C enables the first wiring layer connected between the thermoelectric conversion elements 3 and 4 to be connected. The connecting portion of 11A is deformed to absorb the dimensional change. Therefore, it is possible to suppress the occurrence of thermal stress in the respective thermoelectric conversion elements 3 and 4 due to the thermal expansion difference of the respective thermoelectric conversion elements 3 and 4.

而且，即使在如此使用具有複數第1配線層11A之大型第1配線基板6A～6C的熱電轉換模組中，亦可以抑制藉由各熱電轉換元件3、4之熱伸縮而產生在各熱電轉換元件3、4內之熱應力的發生。因為，可以防止藉由各熱電轉換元件3、4從第1配線基板6A～6C(第1配線層11A)被剝離，或在熱電轉換元件3、4產生裂紋之情形。因此，可以良好地維持藉由第1配線層11A被連接之兩熱電轉換元件3、4間之電性連接，且可以良好地維持熱電轉換模組之接合可靠性、熱傳導性及導電性。Furthermore, even in the thermoelectric conversion module using the large first wiring substrates 6A to 6C having the plurality of first wiring layers 11A in this way, it is possible to suppress the occurrence of the thermoelectric conversion caused by the thermal expansion and contraction of the thermoelectric conversion elements 3 and 4. The occurrence of thermal stress in the elements 3,4. This is because it is possible to prevent the thermoelectric conversion elements 3 and 4 from being peeled off from the first wiring substrates 6A to 6C (the first wiring layer 11A), or to cause cracks in the thermoelectric conversion elements 3 and 4. Therefore, the electrical connection between the two thermoelectric conversion elements 3 and 4 connected through the first wiring layer 11A can be maintained well, and the joint reliability, thermal conductivity, and electrical conductivity of the thermoelectric conversion module can be maintained well.

另外，在上述實施型態之第1配線基板2A、5A、6A～6C中，雖然設成具有各被分離成複數圖案之第1熱傳達金屬層31A、32A之構成，但是如圖19A及圖19B所示之第1配線基板7A般，亦可以將第1熱傳達金屬層31C構成連結3個以上之第1陶瓷層22A的大型。在此情況，因可以藉由第1熱傳達金屬層31C連結各第1陶瓷層22A，故不藉由第1配線層11A連結各第1陶瓷層22A，可以使第1配線基板7A一體化而予以構成。In addition, the first wiring substrates 2A, 5A, and 6A to 6C of the above-mentioned embodiment have a structure in which the first heat transfer metal layers 31A and 32A each are separated into a plurality of patterns, but as shown in FIG. Like the first wiring substrate 7A shown in FIG. 19B, the first heat transfer metal layer 31C may be formed in a large size that connects three or more first ceramic layers 22A. In this case, since the first ceramic layers 22A can be connected by the first heat transfer metal layer 31C, the first wiring substrate 7A can be integrated without connecting the first ceramic layers 22A by the first wiring layer 11A. Make up.

即使在使用圖19A及圖19B所示之第1配線基板7A之熱電轉換模組中，藉由在任一的P型熱電轉換元件3和N型熱電轉換元件4之間分斷設置被複數設置的第1陶瓷層22A，在該些P型熱電轉換元件3和N型熱電轉換元件4之間，藉由互相被接合於對方側之第1陶瓷層22A，無隨著P型熱電轉換元件3和N型熱電轉換元件4之熱伸縮的變形被拘束之情形。再者，在各第1陶瓷層22A之分離部分的P型熱電轉換元件3和N型熱電轉換元件4之熱伸縮差，可以使連接熱電轉換元件3、4之間的第1熱傳達金屬層31C之連接部分變形而吸收尺寸變化。因此，可以抑制藉由各熱電轉換元件3、4之熱伸縮差而產生在各熱電轉換元件3、4內之熱應力的發生。Even in the thermoelectric conversion module using the first wiring substrate 7A shown in FIG. 19A and FIG. 19B, plural P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 are provided in a plural number by being dividedly provided. The first ceramic layer 22A, between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4, is bonded to each other by the first ceramic layer 22A, and the P-type thermoelectric conversion element 3 and The thermal expansion and contraction deformation of the N-type thermoelectric conversion element 4 is restricted. Furthermore, the difference in thermal expansion between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 in the separation portion of each of the first ceramic layers 22A enables the first heat transfer metal layer connected between the thermoelectric conversion elements 3 and 4 to be connected. The connecting part of 31C is deformed to absorb the dimensional change. Therefore, it is possible to suppress the occurrence of thermal stress in the respective thermoelectric conversion elements 3 and 4 due to the thermal expansion difference of the respective thermoelectric conversion elements 3 and 4.

另外，在上述實施型態中，第2配線層、第2陶瓷層及第2熱傳達金屬層可以分別設成與第1配線層、第1陶瓷層及第2熱傳達金屬層相同之構成。In the above embodiment, the second wiring layer, the second ceramic layer, and the second heat-transporting metal layer may be provided with the same configuration as the first wiring layer, the first ceramic layer, and the second heat-transmitting metal layer, respectively.

並且，本發明並不限定於上述實施型態之構成，只要在不脫離本發明之主旨的範圍，可增加各種變更。 [產業上之利用可能性]In addition, the present invention is not limited to the configuration of the above-described embodiment, and various changes can be added as long as they do not depart from the gist of the present invention. [Industrial possibilities]

若藉由本發明時，可以防止熱電轉換元件之熱伸縮性差所致的破壞，可以提供接合可靠性、熱傳導性及導電性優良的熱電轉換模組。According to the present invention, the thermoelectric conversion element can be prevented from being damaged due to poor thermal expansion and contraction, and a thermoelectric conversion module having excellent joint reliability, thermal conductivity, and electrical conductivity can be provided.

2A、5A、6A、6B、6C、7A‧‧‧第1配線基板2A, 5A, 6A, 6B, 6C, 7A‧‧‧ First wiring board

2B、5B‧‧‧第2配線基板2B, 5B‧‧‧Second wiring board

3‧‧‧P型熱電轉換元件(熱電轉換元件)3‧‧‧P type thermoelectric conversion element (thermoelectric conversion element)

4‧‧‧N型熱電轉換元件(熱電轉換元件)4‧‧‧N type thermoelectric conversion element (thermoelectric conversion element)

11A、12A‧‧‧第1配線層11A, 12A‧‧‧The first wiring layer

11B、12B‧‧‧第2配線層11B, 12B‧‧‧Second wiring layer

21A、22A、22B、22C‧‧‧第1陶瓷層21A, 22A, 22B, 22C‧‧‧The first ceramic layer

21B‧‧‧第3陶瓷層21B‧‧‧3rd ceramic layer

31A、32A、31C‧‧‧第1熱傳達金屬層31A, 32A, 31C‧‧‧The first heat transfer metal layer

31B、32B‧‧‧第2熱傳達金屬層31B, 32B‧‧‧Second heat transfer metal layer

41‧‧‧金屬化層41‧‧‧ metallization

91‧‧‧配線91‧‧‧ Wiring

201、205‧‧‧陶瓷母材201, 205‧‧‧ceramic base materials

202、202a、202b‧‧‧切割線202, 202a, 202b‧‧‧ cutting line

203‧‧‧第1陶瓷層形成區域203‧‧‧The first ceramic layer forming area

204、206‧‧‧疊層體204, 206‧‧‧ stacked

301、302‧‧‧金屬板301, 302‧‧‧ metal plates

401A、401B‧‧‧加壓板401A, 401B‧‧‧Pressure plate

405‧‧‧挾持體405‧‧‧ holding body

411、412、413‧‧‧補足構件411, 412, 413‧‧‧ make up components

420‧‧‧石墨薄片420‧‧‧Graphite sheet

101、102、103‧‧‧熱電轉換模組101, 102, 103‧‧‧ Thermoelectric conversion modules

圖1為表示第1實施型態之熱電轉換模組之縱剖面圖。 　　圖2為第1實施型態之熱電轉換模組之製造方法之流程圖。 　　圖3A為說明第1實施型態之熱電轉換模組之製造方法之切割線形成工程的縱剖面圖。 　　圖3B為說明第1實施型態之熱電換模組之製造方法之金屬層形成工程的縱剖面圖，表示工程之前半部分。 　　圖3C為說明第1實施型態之熱電換模組之製造方法之金屬層形成工程的縱剖面圖，表示工程之後半部分。 　　圖3D為說明第1實施型態之熱電轉換模組之製造方法之分割工程的縱剖面圖。 　　圖4A為說明第1實施型態之熱電轉換模組之製造方法之切割線形成工程的斜視圖。 　　圖4B為說明第1實施型態之熱電換模組之製造方法之金屬層形成工程的縱剖面圖，表示工程之前半部分。 　　圖4C為說明第1實施型態之熱電換模組之製造方法之金屬層形成工程的縱剖面圖，表示工程之後半部分。 　　圖4D為說明第1實施型態之熱電轉換模組之製造方法之分割工程的縱剖面圖。 　　圖5為表示第1實施型態之熱電轉換模組之接合工程的縱剖面圖。 　　圖6為說明其他實施型態之接合工程的縱剖面圖。 　　圖7為說明其他實施型態之接合工程的縱剖面圖。 　　圖8為表示第2實施型態之熱電轉換模組之正視圖。 　　圖9為表示第3實施型態之熱電轉換模組之正視圖。 　　圖10為圖9之A-A線之箭頭方向之水平剖面圖。 　　圖11為圖9之B-B線之箭頭方向之水平剖面圖。 　　圖12為圖9之C-C線之箭頭方向之水平剖面圖。 　　圖13為圖9之D-D線之箭頭方向之水平剖面圖。 　　圖14A為將在切割線形成工程中所形成的陶瓷母材之一方之面朝向表側的俯視圖。 　　圖14B為將在切割線形成工程中所形成的陶瓷母材之另一方之面朝向表側的俯視圖。 　　圖15A為將在金屬層形成工程中形成有配線層及熱傳達金屬層之圖案的陶瓷母材之一方之面朝向表側的俯視圖。 　　圖15B為將在金屬層形成工程中形成有配線層及熱傳達金屬層之圖案的陶瓷母材之另一方之面朝向表側的俯視圖。 　　圖16A為將第4實施型態之熱電轉換模組之第1配線基板之一方之面朝向表側之俯視圖。 　　圖16B為將圖16A所示之第1配線基板之另一方之面朝向表側的俯視圖。 　　圖17A為將第5實施型態之熱電轉換模組之第1配線基板之一方之面朝向表側之俯視圖。 　　圖17B為將圖17A所示之第1配線基板之另一方之面朝向表側的俯視圖。 　　圖18A為將第6實施型態之熱電轉換模組之第1配線基板之一方之面朝向表側之俯視圖。 　　圖18B為將圖18A所示之第1配線基板之另一方之面朝向表側的俯視圖。 　　圖19A為將第7實施型態之熱電轉換模組之第1配線基板之一方之面朝向表側之俯視圖。 　　圖19B為將圖19A所示之第1配線基板之另一方之面朝向表側的俯視圖。FIG. 1 is a longitudinal sectional view showing a thermoelectric conversion module according to a first embodiment. FIG. 2 is a flowchart of a method for manufacturing a thermoelectric conversion module according to the first embodiment. FIG. 3A is a longitudinal sectional view illustrating a cutting line forming process of a method for manufacturing a thermoelectric conversion module according to the first embodiment. FIG. 3B is a longitudinal cross-sectional view illustrating a metal layer forming process of the manufacturing method of the thermoelectric module of the first embodiment, showing the first half of the process. C FIG. 3C is a longitudinal cross-sectional view illustrating a metal layer forming process of the manufacturing method of the thermoelectric module of the first embodiment, and shows the latter half of the process. FIG. 3D is a longitudinal sectional view illustrating a division process of a method for manufacturing a thermoelectric conversion module according to the first embodiment. FIG. 4A is a perspective view illustrating a cutting line forming process of the manufacturing method of the thermoelectric conversion module of the first embodiment. FIG. 4B is a longitudinal cross-sectional view illustrating a metal layer forming process of the manufacturing method of the thermoelectric module of the first embodiment, and shows the first half of the process. FIG. 4C is a longitudinal sectional view illustrating a metal layer forming process of a manufacturing method of the thermoelectric module of the first embodiment, and shows the latter half of the process. FIG. 4D is a longitudinal sectional view illustrating a division process of a method for manufacturing a thermoelectric conversion module according to the first embodiment. FIG. 5 is a longitudinal sectional view showing a bonding process of the thermoelectric conversion module according to the first embodiment. FIG. 6 is a longitudinal cross-sectional view illustrating a bonding process according to another embodiment. FIG. 7 is a longitudinal cross-sectional view illustrating a joining process according to another embodiment. FIG. 8 is a front view showing a thermoelectric conversion module according to a second embodiment. FIG. 9 is a front view showing a thermoelectric conversion module according to a third embodiment. FIG. 10 is a horizontal sectional view in the direction of the arrow of the line A-A in FIG. 9. FIG. 11 is a horizontal sectional view in the direction of the arrow of the line B-B in FIG. 9. FIG. 12 is a horizontal sectional view in the direction of the arrow of the C-C line in FIG. 9. FIG. 13 is a horizontal cross-sectional view in the arrow direction of the D-D line in FIG. 9. FIG. 14A is a plan view of one side of the ceramic base material formed in the cutting line forming process toward the front side. FIG. 14B is a plan view of the other surface of the ceramic base material formed in the cutting line forming process toward the front side. A FIG. 15A is a plan view of one surface of a ceramic base material on which a pattern of a wiring layer and a heat transfer metal layer is formed in a metal layer forming process toward the front side. FIG. 15B is a plan view of the other surface of the ceramic base material having the pattern of the wiring layer and the heat transfer metal layer formed in the metal layer forming process toward the front side. FIG. 16A is a plan view of one surface of one of the first wiring substrates of the thermoelectric conversion module of the fourth embodiment toward the front side. FIG. 16B is a plan view with the other surface of the first wiring board shown in FIG. 16A facing the front side. FIG. 17A is a plan view of one surface of one of the first wiring substrates of the thermoelectric conversion module according to the fifth embodiment toward the front side. 17B is a plan view with the other surface of the first wiring substrate shown in FIG. 17A facing the front side. FIG. 18A is a plan view of one side of the first wiring substrate of the thermoelectric conversion module according to the sixth embodiment toward the front side. FIG. 18B is a plan view with the other surface of the first wiring substrate shown in FIG. 18A facing the front side. FIG. 19A is a plan view with one surface of one of the first wiring substrates of the thermoelectric conversion module of the seventh embodiment facing the front side. FIG. 19B is a plan view with the other surface of the first wiring board shown in FIG. 19A facing the front side.

Claims (13)

一種熱電轉換模組，具有： 　　複數熱電轉換元件，其係由線膨脹係數不同之P型熱電轉換元件和N型熱電轉換元件所構成； 　　第1配線基板，其係被配設在複數上述熱電轉換元件之一端側， 　　上述第1配線基板具有：第1配線層，其係接合有相鄰的上述P型熱電轉換元件和上述N型熱電轉換元件；和第1陶瓷層，其係被接合於與該第1配線層之上述P型熱電轉換元件和上述N型熱電轉換元件之接合面相反之面，且被分離成複數， 　　各第1陶瓷層在任一的上述P型熱電轉換元件和上述N型熱電轉換元件之間分離。A thermoelectric conversion module includes: a plurality of thermoelectric conversion elements, which are composed of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements having different linear expansion coefficients; a first wiring substrate, which is arranged in a plurality of the above-mentioned thermoelectric conversion elements On one end side of the element, the first wiring substrate includes: a first wiring layer to which the P-type thermoelectric conversion element and the N-type thermoelectric conversion element adjacent to each other are bonded; and a first ceramic layer bonded to the first ceramic layer. The P-type thermoelectric conversion element and the N-type thermoelectric conversion element on the first wiring layer are opposite to each other and are separated into a plurality of numbers. Each of the first ceramic layers is in any one of the P-type thermoelectric conversion element and the N-type. The thermoelectric conversion elements are separated. 如請求項1所載之熱電轉換模組，其中 　　上述第1配線層跨越上述第1陶瓷層彼此間而被形成。The thermoelectric conversion module as described in claim 1, wherein the first wiring layer is formed across the first ceramic layers. 如請求項1所載之熱電轉換模組，其中 　　上述第1陶瓷層獨立形成在每個上述熱電轉換元件。The thermoelectric conversion module as set forth in claim 1, wherein the above-mentioned first ceramic layer is independently formed on each of the above-mentioned thermoelectric conversion elements. 如請求項1所載之熱電轉換模組，其中 　　上述第1配線基板具有複數上述第1配線層，和被接合於與上述第1陶瓷層之上述第1配線層之接合面相反之面的第1熱傳達金屬層， 　　上述第1熱傳達金屬層跨越相鄰之兩第1配線層之間而被形成，並且跨越相鄰的兩第1陶瓷層之間而被形成。The thermoelectric conversion module described in claim 1, wherein the first wiring substrate has a plurality of the first wiring layers, and the first wiring substrate is bonded to a surface opposite to a bonding surface of the first wiring layer of the first ceramic layer. 1 heat transfer metal layer, the first heat transfer metal layer is formed across two adjacent first wiring layers, and is formed across two adjacent first ceramic layers. 如請求項1所載之熱電轉換模組，其中 　　具有被配設在上述熱電轉換元件之另一端側的第2配線基板，經由被相向配置之上述第1配線基板和上述第2配線基板而電性串聯連接上述P型熱電轉換元件和上述N形熱電轉換元件。The thermoelectric conversion module as described in claim 1, which has a second wiring substrate disposed on the other end side of the thermoelectric conversion element, and is electrically connected through the first wiring substrate and the second wiring substrate arranged opposite to each other. The P-type thermoelectric conversion element and the N-type thermoelectric conversion element are connected in series in series. 如請求項5所載之熱電轉換模組，其中 　　上述第2配線基板具有： 　　第2配線層，其係接合有相鄰的上述P型熱電轉換元件和上述N型熱電轉換元件；和 　　第2陶瓷層，其係被接合於與該第2配線層之上述P型熱電轉換元件和上述N型熱電轉換元件之接合面相反之面，且被分離成複數， 　　各第2陶瓷層在任一的上述P型熱電轉換元件和上述N型熱電轉換元件之間分離。The thermoelectric conversion module as set forth in claim 5, wherein the second wiring substrate has: a second wiring layer that is bonded to the adjacent P-type thermoelectric conversion element and the N-type thermoelectric conversion element; and a second ceramic Layer, which is bonded to a surface opposite to the bonding surface of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element of the second wiring layer, and is separated into a plurality of layers, each of the second ceramic layers being at any one of the above-mentioned P The type thermoelectric conversion element is separated from the above-mentioned N-type thermoelectric conversion element. 一種熱電轉換模組之製造方法，具有： 　　切割線形成工程，其係將用以從陶瓷母材分割複數第1陶瓷層之切割線形成在該陶瓷母材； 　　金屬層形成工程，其係於上述切割線形成工程後，在上述陶瓷母材之一方之面，形成跨越藉由上述切割線被區劃的複數第1陶瓷層形成區域中之鄰接的兩第1陶瓷層形成區域的第1配線層； 　　分割工程，其係於上述金屬層形成工程後，沿著上述切割線分割形成有上述第1配線層之上述陶瓷母材，形成接合有上述第1配線層和上述第1陶瓷層的第1配線基板；及 　　接合工程，其係於上述分割工程後，在與上述第1配線層之各第1陶瓷層之接合面相反之面，接合線膨脹係數不同的P型熱電轉換元件和N型熱電轉換元件，製造串聯連接上述P型熱電轉換元件和上述N型熱電轉換元件之熱電轉換模組。A method for manufacturing a thermoelectric conversion module includes: (1) a cutting line forming process for forming a cutting line for dividing a plurality of first ceramic layers from a ceramic base material on the ceramic base material; (2) a metal layer forming process based on the above After the cutting line forming process, a first wiring layer is formed on one of the surfaces of the ceramic base material and spans two adjacent first ceramic layer formation areas in the plurality of first ceramic layer formation areas divided by the cutting line; The division process is after the metal layer forming process, the ceramic base material on which the first wiring layer is formed is divided along the cutting line, and the first wiring where the first wiring layer and the first ceramic layer are joined is formed. A substrate; and a bonding process, after the above-mentioned division process, on the opposite side to the bonding surface of each of the first ceramic layers of the first wiring layer, a P-type thermoelectric conversion element and an N-type thermoelectric conversion with different coefficients of expansion of the bonding wires Element to manufacture a thermoelectric conversion module in which the P-type thermoelectric conversion element and the N-type thermoelectric conversion element are connected in series. 如請求項7所載之熱電轉換模組之製造方法，其中 　　上述接合工程被設成先在被相向配置的一組加壓板之間，配置分別重疊上述第1配線基板之上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之挾持體，藉由在其疊層方向加壓該挾持體之狀態下加熱該挾持體，分別接合上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之工程， 　　在上述接合工程中， 　　先在上述P型電轉換元件和上述N型熱電轉換元件之中，至少線膨脹係數小之一方之熱電轉換元件和上述加壓板之間，配置補足構件， 　　先使在上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之接合時的上述一方之熱電轉換元件及上述補足構件之高度和上述另一方之熱電轉換元件及上述補足構件之高度的差，小於上述一方之熱電轉換元件之高度和上述另一方之熱電轉換元件之高度的差。The method for manufacturing a thermoelectric conversion module as set forth in claim 7, wherein the above-mentioned bonding process is set to firstly arrange the first wiring layer that overlaps the first wiring substrate between a group of pressure plates arranged opposite to each other. And the holder of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element, and heating the holder in a state in which the holder is pressed in the lamination direction to join the first wiring layer and the P-type thermoelectric The conversion element and the above-mentioned N-type thermoelectric conversion element project, In the above-mentioned joining process, first among the P-type electric conversion element and the N-type thermoelectric conversion element, the thermoelectric conversion element having at least one smaller linear expansion coefficient and the above-mentioned Complementary members are arranged between the pressure plates. First, when the first wiring layer is connected to the P-type thermoelectric conversion element and the N-type thermoelectric conversion element, the height of the one thermoelectric conversion element and the supplementary member and the other The difference in height between one thermoelectric conversion element and the above-mentioned supplementary member is smaller than the height of the one thermoelectric conversion element and the other The difference in height of the thermoelectric conversion element. 如請求項7所載之熱電轉換模組之製造方法，其中 　　上述接合工程被設成先在被相向配置的一組加壓板之間，配置分別重疊上述第1配線基板之上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之挾持體，藉由在其疊層方向加壓該挾持體之狀態下加熱該挾持體，分別接合上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之工程， 　　在上述接合工程中， 　　在上述疊層方向重疊配置複數個上述挾持體，並且在上述疊層方向配置同數量上述P型熱電轉換元件和上述N型熱電轉換元件。The method for manufacturing a thermoelectric conversion module as set forth in claim 7, wherein the above-mentioned bonding process is set to firstly arrange the first wiring layer that overlaps the first wiring substrate between a group of pressure plates arranged opposite to each other. And the holder of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element, and heating the holder in a state in which the holder is pressed in the lamination direction to join the first wiring layer and the P-type thermoelectric In the conversion element and the N-type thermoelectric conversion element, in the joining process, 重叠 a plurality of the holders are arranged in the stacking direction, and the same number of the P-type thermoelectric conversion elements and the N-type are arranged in the stacking direction. Thermoelectric conversion element. 如請求項7所載之熱電轉換模組之製造方法，其中 　　上述金屬層形成工程被設成在上述陶瓷母材之上述一方之面形成複數上述第1配線層，並且 　　在上述陶瓷母材之另一方之面形成第1熱傳達金屬層的工程， 　　在上述金屬層形成工程中， 　　將上述第1熱傳達金屬層，形成跨越相鄰之兩第1配線層之間，並且形成跨越相鄰的兩第1陶瓷層形成區域之間。The method for manufacturing a thermoelectric conversion module as described in claim 7, wherein the metal layer forming process is configured to form a plurality of the first wiring layers on the one side of the ceramic base material, and The process of forming the first heat transfer metal layer on one side, In the metal layer formation process, the first heat transfer metal layer is formed to span between two adjacent first wiring layers, and to form two Between the first ceramic layer forming regions. 如請求項7所載之熱電轉換模組之製造方法，其中 　　在上述切割線形成工程中， 　　上述切割線形成在上述陶瓷母材之一方之面中除上述第1配線層之接合預定區域之外的非接合部。The method for manufacturing a thermoelectric conversion module as described in claim 7, wherein in the above-mentioned cutting line forming process, the above-mentioned cutting line is formed on one of the surfaces of the ceramic base material except for a predetermined bonding area of the first wiring layer. Non-joint. 如請求項10所載之熱電轉換模組之製造方法，其中 　　在上述切割線形成工程中， 　　上述切割線形成在上述陶瓷母材之另一方之面中除上述第1配線層之接合預定區域之外的非接合部。The method for manufacturing a thermoelectric conversion module as set forth in claim 10, wherein, in the above-mentioned cutting line forming process, the above-mentioned cutting line is formed on the other side of the ceramic base material except for a predetermined bonding area of the first wiring layer. Outside non-joint. 如請求項7所載之熱電轉換模組之製造方法，其中 　　在上述切割線形成工程中， 　　上述切割線係以貫通上述陶瓷母材之相向的邊彼此之直線而形成。The method for manufacturing a thermoelectric conversion module as set forth in claim 7, wherein: In the above-mentioned cutting line forming process, the cutting line is formed by a straight line penetrating the opposite sides of the ceramic base material.
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