TWI758431B - Thermoelectric conversion module and its manufacturing method - Google Patents

Thermoelectric conversion module and its manufacturing method Download PDF

Info

Publication number
TWI758431B
TWI758431B TW107107565A TW107107565A TWI758431B TW I758431 B TWI758431 B TW I758431B TW 107107565 A TW107107565 A TW 107107565A TW 107107565 A TW107107565 A TW 107107565A TW I758431 B TWI758431 B TW I758431B
Authority
TW
Taiwan
Prior art keywords
thermoelectric conversion
conversion element
type thermoelectric
wiring
layer
Prior art date
Application number
TW107107565A
Other languages
Chinese (zh)
Other versions
TW201843849A (en
Inventor
新井皓也
駒崎雅人
Original Assignee
日商三菱綜合材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2017163484A external-priority patent/JP6933055B2/en
Application filed by 日商三菱綜合材料股份有限公司 filed Critical 日商三菱綜合材料股份有限公司
Publication of TW201843849A publication Critical patent/TW201843849A/en
Application granted granted Critical
Publication of TWI758431B publication Critical patent/TWI758431B/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions

Abstract

熱電轉換模組具有：複數熱電轉換元件，其係由線膨脹係數不同之P型熱電轉換元件和N型熱電轉換元件所構成；和第1配線基板，其係被配設在複數上述熱電轉換元件之一端側，上述第1配線基板具有：第1配線層，其係接合有相鄰的上述P型熱電轉換元件和上述N型熱電轉換元件；和第1陶瓷層，其係被接合於與該第1配線層之上述P型熱電轉換元件和上述N型熱電轉換元件之接合面相反之面，且被分離成複數，各第1陶瓷層在任一的上述P型熱電轉換元件和上述N型熱電轉換元件之間分離。The thermoelectric conversion module has: a plurality of thermoelectric conversion elements, which are composed of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements having different linear expansion coefficients; and a first wiring board, which is arranged on the plurality of thermoelectric conversion elements. On one end side, the first wiring board has: a first wiring layer to which the adjacent P-type thermoelectric conversion element and the N-type thermoelectric conversion element are bonded; and a first ceramic layer bonded to the adjacent P-type thermoelectric conversion element and the N-type thermoelectric conversion element The P-type thermoelectric conversion element and the N-type thermoelectric conversion element of the first wiring layer are on the opposite side of the junction surface, and are separated into plural numbers, and each first ceramic layer is on any one of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element. separation between conversion elements.

Description

熱電轉換模組及其製造方法Thermoelectric conversion module and its manufacturing method

本發明係關於串聯配列P型熱電轉換元件和N型熱電轉換元件的熱電轉換模組及其製造方法。The present invention relates to a thermoelectric conversion module in which a P-type thermoelectric conversion element and an N-type thermoelectric conversion element are arranged in series, and a manufacturing method thereof.

本案係根據2017年3月8日在日本申請的特願2017-43487號及2017年8月28日在日本申請的特願2017-163484號主張優先權，將該些內容援用於此。In this case, priority is claimed based on Japanese Patent Application No. 2017-43487 filed in Japan on March 8, 2017 and Japanese Patent Application No. 2017-163484 filed in Japan on August 28, 2017, and these contents are incorporated herein by reference.

熱電轉換模組一般被設成在一組配線基板(絕緣基板)之間，以依P型、N型、P型、N型之順序交互配置一對P型熱電轉換元件和N型熱電轉換元件之方式，電性串聯連接的構成。熱電轉換模組係將配線之兩端連接於直流電源，藉由帕耳帖效應(Peltier effect)，在各熱電轉換元件中使熱移動(在P型朝與電流相同方向，在N型朝與電流相反方向移動)，或是對兩配線基板間賦予溫度差而使各熱電轉換元件藉由席貝克效應(Seebeck effect)產生電動勢，能夠作為冷卻、加熱或發電的利用。Thermoelectric conversion modules are generally arranged between a set of wiring substrates (insulating substrates) to alternately arrange a pair of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements in the order of P-type, N-type, P-type, and N-type In this way, the structure is electrically connected in series. The thermoelectric conversion module connects the two ends of the wiring to the DC power supply, and moves heat in each thermoelectric conversion element by the Peltier effect (in the P type, it is in the same direction as the current, and in the N type, it is in the same direction as the current). The current moves in the opposite direction), or a temperature difference is applied between the two wiring substrates to cause each thermoelectric conversion element to generate an electromotive force by the Seebeck effect, which can be used for cooling, heating, or power generation.

在熱電轉換模組中，由於越成為高溫作動，效率越高，故開發出很多高溫型之熱電轉換模組。在中高溫(300℃)以上被使用的熱電轉換模組中，因絕緣基板之材料無法使用樹脂，故通常進行將陶瓷使用於絕緣基板。In the thermoelectric conversion module, the higher the temperature is, the higher the efficiency is. Therefore, many high-temperature thermoelectric conversion modules have been developed. In the thermoelectric conversion module used at medium and high temperature (300°C) or higher, since resin cannot be used as the material of the insulating substrate, ceramics are usually used for the insulating substrate.

在陶瓷之中，例如氮化鋁般，存在兼顧絕緣性和熱傳導性。但是，因陶瓷既係堅硬且剛性高之材料，故作為剛體，將熱電轉換元件間之線膨脹差改變成熱應力。即是，在P型熱電轉換元件和N型熱電轉換元件之兩熱電轉換元件之熱電轉換材料，使用線膨脹係數不同之材料之情況，當在熱源設置熱電轉換模組時，由於兩熱電轉換元件藉由陶瓷基板被拘束，使得無法追隨各形狀變化。因此，在線膨脹係數大的熱電轉換元件產生壓縮應力，在線膨脹係數小之熱電轉換元件產生拉伸應力。Among ceramics, for example, aluminum nitride has both insulating properties and thermal conductivity. However, since ceramics are hard and highly rigid materials, as a rigid body, the difference in linear expansion between the thermoelectric conversion elements is changed into thermal stress. That is, when the thermoelectric conversion materials of the two thermoelectric conversion elements of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element use materials with different linear expansion coefficients, when a thermoelectric conversion module is installed in the heat source, the two thermoelectric conversion elements The ceramic substrate is constrained so that it cannot follow various shape changes. Therefore, a thermoelectric conversion element with a large linear expansion coefficient generates compressive stress, and a thermoelectric conversion element with a small linear expansion coefficient generates tensile stress.

在藉由熱伸縮差，產生熱應力之情況，有熱電轉換元件從配線基板之配線部剝離，或在熱電轉換元件產生裂紋之情況。在此情況，有時而電流不流通，時而電傳導度下降而使得熱電轉換模組無法動作，或就算無達到無法動作發電量也大幅度下降之虞。When thermal stress is generated due to the difference in thermal expansion and contraction, the thermoelectric conversion element may be peeled off from the wiring portion of the wiring board, or a crack may be generated in the thermoelectric conversion element. In this case, the current may not flow, and the electrical conductivity may be lowered, so that the thermoelectric conversion module cannot be operated, or the power generation amount may be greatly reduced even if it does not reach the inoperable level.

於是，在例如專利文獻1～3中，藉由連接複數熱電轉換元件(熱電半導體材料、熱電轉換半導體)之配線(電極)，使用所謂的發泡金屬(多孔性金屬材料、多孔質金屬構件)，或金屬纖維之集合體，對配線賦予柔軟性，進行嘗試緩和熱伸縮差所致的熱應力。 [先前技術文獻] [專利文獻]Then, in Patent Documents 1 to 3, for example, a so-called foam metal (porous metal material, porous metal member) is used by connecting wirings (electrodes) of a plurality of thermoelectric conversion elements (thermoelectric semiconductor materials, thermoelectric conversion semiconductors) , or an aggregate of metal fibers, which imparts flexibility to the wiring, and attempts to alleviate thermal stress caused by differences in thermal expansion and contraction. [Prior Art Literature] [Patent Literature]

[專利文獻1] 日本特開2007-103580號公報 　　[專利文獻2] 國際公開第2010/010783號 　　[專利文獻3] 日本專利第5703871號公報[Patent Document 1] Japanese Patent Laid-Open No. 2007-103580 [Patent Document 2] International Publication No. 2010/010783 [Patent Document 3] Japanese Patent No. 5703871

[發明所欲解決之課題][The problem to be solved by the invention]

在專利文獻1～3中，配線使用發泡金屬或金屬纖維之集合體，成為在該些構件本身流通電流之構成。因此，配線之內部電阻(熱電阻及電阻)大幅度上升，有使熱電轉換模組之輸出大幅度下降之虞。In Patent Documents 1 to 3, a metal foam or an aggregate of metal fibers is used for the wiring, and a current flows through the members themselves. Therefore, the internal resistance (thermal resistance and resistance) of the wiring is greatly increased, and the output of the thermoelectric conversion module may be greatly reduced.

本發明係鑑於如此之情形而創作出，其目的在於提供可以防止熱電轉換元件之熱伸縮差所致的破壞，接合可靠性、熱傳導性及導電性優良的熱電轉換模組及其製造方法。 [用以解決課題之手段]The present invention has been made in view of such a situation, and an object thereof is to provide a thermoelectric conversion module and a method for manufacturing the same which can prevent damage due to difference in thermal expansion and contraction of thermoelectric conversion elements, and are excellent in bonding reliability, thermal conductivity, and electrical conductivity. [means to solve the problem]

本發明之熱電轉換模組具有：複數熱電轉換元件，其係由線膨脹係數不同之P型熱電轉換元件和N型熱電轉換元件所構成；和第1配線基板，其係被配設在複數上述熱電轉換元件之一端側，上述第1配線基板具有：第1配線層，其係接合有相鄰的上述P型熱電轉換元件和上述N型熱電轉換元件；和第1陶瓷層，其係被接合於與該第1配線層之上述P型熱電轉換元件和上述N型熱電轉換元件之接合面相反之面，且被分離成複數，各第1陶瓷層在任一的上述P型熱電轉換元件和上述N型熱電轉換元件之間分離。The thermoelectric conversion module of the present invention includes: a plurality of thermoelectric conversion elements composed of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements having different linear expansion coefficients; and a first wiring board arranged on the plurality of above-mentioned thermoelectric conversion elements On one end side of the thermoelectric conversion element, the first wiring board has: a first wiring layer to which the adjacent P-type thermoelectric conversion element and the N-type thermoelectric conversion element are bonded; and a first ceramic layer to which the bonding is performed On the surface opposite to the junction surface of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element of the first wiring layer, and separated into plural numbers, each first ceramic layer is formed on any one of the P-type thermoelectric conversion element and the above-mentioned P-type thermoelectric conversion element. separation between N-type thermoelectric conversion elements.

在複數熱電轉換元件之一端側被接合的第1配線基板中，與構成該第1配線基板之第1配線層相鄰的P型熱電轉換元件和N型熱電轉換元件被接合，該些P型熱電轉換元件和N型熱電轉換元件之間藉由第1配線層被電性連接。另外，被接合於第1配線層之各第1陶瓷層係在設置複數熱電轉換元件之中，任一的P型熱電轉換元件和N型熱電轉換元件之間被分離，且設置複數。P-type thermoelectric conversion elements and N-type thermoelectric conversion elements adjacent to the first wiring layer constituting the first wiring board are bonded to a first wiring board to which one end side of a plurality of thermoelectric conversion elements is bonded, and these P-type thermoelectric conversion elements are bonded to each other. The thermoelectric conversion element and the N-type thermoelectric conversion element are electrically connected through the first wiring layer. In addition, each of the first ceramic layers bonded to the first wiring layer is provided with a plurality of thermoelectric conversion elements, and any one of the P-type thermoelectric conversion elements and the N-type thermoelectric conversion elements are separated, and a plurality of thermoelectric conversion elements are provided.

如此一來，剛體之第1陶瓷層因在任一的P型熱電轉換元件和N型熱電轉換元件之間被分斷，且設置複數，故在該些P型熱電轉換元件和N型熱電轉換元件之間，彼此藉由對方側之第1陶瓷層，無隨著熱伸縮的變形被拘束之情形。因此，可以抑制藉由各熱電轉換元件之熱伸縮差而產生在各熱電轉換元件內之熱應力的發生，可以防止時而各熱電轉換元件從第1配線基板(第1配線層)剝離，時而在各熱電轉換元件產生裂紋的情形。因此，可以良好地維持第1配線層被連接之兩熱電轉換元件間之電性連接，且可以良好地維持熱電轉換模組之接合可靠性、熱傳導性及導電性。In this way, the first ceramic layer of the rigid body is divided between any of the P-type thermoelectric conversion elements and the N-type thermoelectric conversion elements, and a plurality of them are provided, so these P-type thermoelectric conversion elements and N-type thermoelectric conversion elements are formed. Between them, there is no situation that the deformation due to thermal expansion and contraction is restrained by the first ceramic layer on the other side. Therefore, the occurrence of thermal stress in each thermoelectric conversion element due to the difference in thermal expansion and contraction of each thermoelectric conversion element can be suppressed, and it is possible to prevent each thermoelectric conversion element from peeling off the first wiring board (first wiring layer) from time to time. On the other hand, cracks occurred in each thermoelectric conversion element. Therefore, the electrical connection between the two thermoelectric conversion elements to which the first wiring layer is connected can be well maintained, and the bonding reliability, thermal conductivity, and electrical conductivity of the thermoelectric conversion module can be well maintained.

再者，在第1配線基板設置有第1陶瓷層。因此，於在熱源等設置熱電轉換模組之時，可以藉由第1陶瓷層，防止熱源等和第1配線層接觸之情形。因此，可以確實地迴避熱源等和第1配線層之電性連接(洩漏)，且可以良好地維持絕緣狀態。另外，各熱轉換元件因電壓低，若絕緣基板亦即第1陶瓷層在相鄰的P型熱電轉換元件和N型熱電轉換元件分離時，就算在第1配線層之全面無接合各第1陶瓷層，只要在第1配線層無物理性地接觸到熱源等，就不會產生電性洩漏。Furthermore, the first ceramic layer is provided on the first wiring board. Therefore, when the thermoelectric conversion module is installed in the heat source or the like, the first ceramic layer can prevent the heat source or the like from coming into contact with the first wiring layer. Therefore, the electrical connection (leakage) between the heat source and the like and the first wiring layer can be reliably avoided, and the insulating state can be well maintained. In addition, due to the low voltage of each thermal conversion element, if the insulating substrate, that is, the first ceramic layer, is separated from the adjacent P-type thermoelectric conversion element and N-type thermoelectric conversion element, even if there is no bonding on the entire surface of the first wiring layer. As long as the ceramic layer does not physically come into contact with a heat source or the like in the first wiring layer, electrical leakage will not occur.

作為本發明之熱電轉換模組之較佳實施態樣，以上述第1配線層跨越上述第1陶瓷層彼此之間而被形成為佳。As a preferred embodiment of the thermoelectric conversion module of the present invention, the first wiring layer is preferably formed so as to span between the first ceramic layers.

在此情況，相鄰的P型熱電轉換元件和N型熱電轉換元件之熱伸縮差，可以使連接熱電轉換元件之間的第1配線層之連接部分變形而吸收尺寸變化。因此，可以抑制藉由各熱電轉換元件之熱伸縮差而產生在各熱電轉換元件內之熱應力的發生。In this case, the difference in thermal expansion and contraction between adjacent P-type thermoelectric conversion elements and N-type thermoelectric conversion elements can deform the connection portion of the first wiring layer connecting the thermoelectric conversion elements to absorb dimensional changes. Therefore, the occurrence of thermal stress in each thermoelectric conversion element due to the difference in thermal expansion and contraction of each thermoelectric conversion element can be suppressed.

作為本發明之熱電轉換模組之較佳實施態樣，以上述第1陶瓷層獨立形成在每個上述熱電轉換元件為佳。As a preferred embodiment of the thermoelectric conversion module of the present invention, it is preferable that the above-mentioned first ceramic layer is independently formed on each of the above-mentioned thermoelectric conversion elements.

在此情況，構成第1配線基板之複數第1陶瓷層被獨立形成在被配設複數的每個熱電轉換元件獨立形成，剛體之各第1陶瓷層在各熱電轉換元件之間被分離。因此，各熱電轉換元件藉由各第1陶瓷層無隨著熱伸縮的變形被拘束之情形。再者，相鄰的P型熱電轉換元件和N型熱電轉換元件之熱伸縮差，可以使連接兩熱電轉換元件之間的第1配線層之連接部分變形而吸收尺寸變化。因此，藉由可以抑制藉由熱伸縮差而產生在各熱電轉換元件內之熱應力的發生。In this case, the plurality of first ceramic layers constituting the first wiring board are formed independently for each thermoelectric conversion element to which the plurality of thermoelectric conversion elements are arranged, and the first ceramic layers of the rigid body are separated between the thermoelectric conversion elements. Therefore, each thermoelectric conversion element is not restrained by the deformation|transformation accompanying thermal expansion and contraction by each 1st ceramic layer. Furthermore, the difference in thermal expansion and contraction between adjacent P-type thermoelectric conversion elements and N-type thermoelectric conversion elements can deform the connection portion of the first wiring layer connecting the two thermoelectric conversion elements to absorb dimensional changes. Therefore, the occurrence of thermal stress in each thermoelectric conversion element due to the difference in thermal expansion and contraction can be suppressed.

作為本發明之熱電轉換模組之較佳實施態樣，以上述第1配線層為銀、鋁、銅或鎳為佳。銀、鋁、銅或鎳包含以該些為主成分之合金。理想上，以上述第1配線層為純度99.99質量%以上之鋁，或純度99.9質量%以上之銅為佳。As a preferred embodiment of the thermoelectric conversion module of the present invention, the first wiring layer is preferably silver, aluminum, copper or nickel. Silver, aluminum, copper or nickel includes alloys containing these as main components. Ideally, the first wiring layer is preferably made of aluminum with a purity of 99.99 mass % or more, or copper with a purity of 99.9 mass % or more.

高純度之鋁(Al)或銅(Cu)容易彈性變形、塑性變形。再者，鋁或銅之熱傳導性或導電性優。因此，藉由第1配線層使用純度高之純鋁或純銅等之軟的材料，可以使第1配線層隨著各熱電轉換元件之熱伸縮而容易變形且追隨。因此，可以更提高各熱電轉換元件之熱伸縮差所致的熱應力之緩和效果。再者，因鋁或銅較銀便宜，故可以便宜地製造熱電轉換模組。再者，藉由鋁或銅形成第1配線層，可以良好地維持藉由第1配線層被連接之兩熱電轉換元件間之熱傳導性或導電性。High-purity aluminum (Al) or copper (Cu) is prone to elastic deformation and plastic deformation. Furthermore, aluminum or copper is excellent in thermal conductivity or electrical conductivity. Therefore, by using a soft material such as high-purity pure aluminum or pure copper for the first wiring layer, the first wiring layer can be easily deformed and follows the thermal expansion and contraction of each thermoelectric conversion element. Therefore, the effect of alleviating thermal stress due to the difference in thermal expansion and contraction of each thermoelectric conversion element can be further enhanced. Furthermore, since aluminum or copper is cheaper than silver, thermoelectric conversion modules can be manufactured inexpensively. Furthermore, by forming the first wiring layer with aluminum or copper, thermal conductivity or electrical conductivity between the two thermoelectric conversion elements connected by the first wiring layer can be well maintained.

藉由以銀(Ag)形成第1配線層，例如在熱電轉換模組之高溫側配置具有第1配線層之第1配線基板之情況，可以時而提升耐熱性或耐氧化性，時而良好地維持熱傳導性或導電性。By forming the first wiring layer with silver (Ag), for example, when the first wiring substrate having the first wiring layer is arranged on the high temperature side of the thermoelectric conversion module, the heat resistance or oxidation resistance can sometimes be improved, and sometimes it is good. to maintain thermal or electrical conductivity.

與鋁或銀相比，雖然鎳(Ni)之耐氧化性差，但是具有比較良好的耐熱性。再者，鎳比銀便宜，並且元件接合性比較好。因此，藉由以鎳形成第1配線層，可以構成性能和價格的平衡比較優的熱電轉換模組。Compared with aluminum or silver, although nickel (Ni) has poor oxidation resistance, it has relatively good heat resistance. Furthermore, nickel is cheaper than silver, and the element bondability is relatively good. Therefore, by forming the first wiring layer with nickel, a thermoelectric conversion module having an excellent balance between performance and price can be constituted.

作為本發明之熱電轉換模組之較佳實施型態，以上述第1配線基板具有複數上述第1配線層，和被接合於與上述第1陶瓷層之上述第1配線層之接合面相反之面之第1熱傳達金屬層，上述第1熱傳達金屬層係跨越相鄰之兩第1配線層之間而被形成，並且跨越相鄰的兩第1陶瓷層之間而被形成為佳。As a preferred embodiment of the thermoelectric conversion module of the present invention, the first wiring board has a plurality of the first wiring layers, and is bonded to a surface opposite to the bonding surface of the first wiring layer of the first ceramic layer. As for the first heat transfer metal layer on the surface, it is preferable that the first heat transfer metal layer is formed to span between two adjacent first wiring layers, and is preferably formed to span between two adjacent first ceramic layers.

因即使在具有複數第1配線層之第1配線基板，亦藉由第1熱傳達金屬層，連接各第1陶瓷層之間，故可以一體地處理各第1配線層，提升第1配線基板之處理性。再者，因各第1陶瓷層之間，僅藉由第1配線層或第1熱傳達金屬層中之任一者而被連結，故第1配線層和第1熱傳達金屬層容易隨著各熱電轉換元件之熱伸縮而變形且追隨。因此，可以抑制藉由各熱電轉換元件之熱伸縮差而產生在各熱電轉換元件內之熱應力的發生，可以防止時而各熱電轉換元件從第1配線基板(第1配線層)剝離，時而在各熱電轉換元件產生裂紋的情形。Even in the first wiring board having a plurality of first wiring layers, the first ceramic layers are connected by the first heat transfer metal layer, so that the first wiring layers can be integrally processed and the first wiring board can be lifted Rational. Furthermore, since the first ceramic layers are connected only by either the first wiring layer or the first heat transfer metal layer, the first wiring layer and the first heat transfer metal layer are easily connected with each other. The thermal expansion and contraction of each thermoelectric conversion element deforms and follows. Therefore, the occurrence of thermal stress in each thermoelectric conversion element due to the difference in thermal expansion and contraction of each thermoelectric conversion element can be suppressed, and it is possible to prevent each thermoelectric conversion element from peeling off the first wiring board (first wiring layer) from time to time. On the other hand, cracks occurred in each thermoelectric conversion element.

再者，藉由在第1配線基板設置第1熱傳達金屬層，在熱源等設置熱電轉換模組之時，藉由第1熱傳達金屬層可以提高熱源等和熱電轉換模組之密接性，可以提升熱導導性。因此，可以提升熱電轉換模組之熱電轉換性能(發電效率)。Furthermore, by providing the first heat transfer metal layer on the first wiring board, when the thermoelectric conversion module is provided on the heat source or the like, the adhesion between the heat source and the like and the thermoelectric conversion module can be improved by the first heat transfer metal layer. Thermal conductivity can be improved. Therefore, the thermoelectric conversion performance (power generation efficiency) of the thermoelectric conversion module can be improved.

作為本發明之熱電轉換模組之較佳實施態樣，上述第1熱傳達金屬層被設成鋁或銅，理想上，以設成純度99.99質量%以上之鋁，或純度99.9質量%以上之銅為佳。As a preferred embodiment of the thermoelectric conversion module of the present invention, the first heat transfer metal layer is made of aluminum or copper, ideally, aluminum with a purity of 99.99 mass % or more, or aluminum with a purity of 99.9 mass % or more Copper is better.

藉由第1熱傳達金屬層也與第1配線層同樣使用純度高之純鋁或純銅等之軟的材料，可以使第1熱傳達金屬層隨著各熱電轉換元件之熱伸縮而容易變形且追隨。因此，可以更提高各熱電轉換元件之熱伸縮差所致的熱應力之緩和效果。再者，藉由鋁或銅形成第1熱傳達金屬層，可以良好地維持熱電轉換模組和熱源等之間的熱傳導性，亦可以良好地維持熱電轉換性能。By using a soft material such as high-purity pure aluminum or pure copper for the first heat transfer metal layer as well as the first wiring layer, the first heat transfer metal layer can be easily deformed with the thermal expansion and contraction of each thermoelectric conversion element. follow. Therefore, the effect of alleviating thermal stress due to the difference in thermal expansion and contraction of each thermoelectric conversion element can be further enhanced. Furthermore, by forming the first heat transfer metal layer with aluminum or copper, the thermal conductivity between the thermoelectric conversion module and the heat source and the like can be well maintained, and the thermoelectric conversion performance can also be well maintained.

作為本發明之熱電轉換模組之較佳實施態樣，以具有被配設在上述熱電轉換元件之另一端側的第2配線基板，經由被相向配置之上述第1配線基板和上述第2配線基板而電性串聯連接上述P型熱電轉換元件和上述N型熱電轉換元件即可。As a preferred embodiment of the thermoelectric conversion module of the present invention, the thermoelectric conversion module has a second wiring board arranged on the other end side of the thermoelectric conversion element, and the first wiring board and the second wiring are arranged opposite to each other. The substrate may be electrically connected in series with the P-type thermoelectric conversion element and the N-type thermoelectric conversion element.

被相向配置之第1配線基板和第2配線基板中，至少構成第1配線基板之第1陶瓷層在任一的P型熱電轉換元件和N型熱電轉換元件之間被分離。因此，在該些P型熱電轉換元件和N型熱電轉換元件之間，彼此藉由被連接於對方側之第1陶瓷層，無隨著熱伸縮的變形被拘束之情形。再者，該些的P型熱電轉換元件和N型熱電轉換元件之熱伸縮差，可以使連接兩熱電轉換元件之間的第1配線層或第1熱傳達金屬層之連接部分變形而吸收尺寸變化。因此，藉由抑制藉由各熱電轉換元件之熱伸縮差而產生在各熱電轉換元件內之熱應力的發生。因此，可以良好地維持藉由第1配線層被連接之兩熱電轉換元件間之電性連接，且可以良好地維持熱電轉換模組之接合可靠性、熱傳導性及導電性。In the first wiring board and the second wiring board which are arranged to face each other, at least the first ceramic layer constituting the first wiring board is separated between any one of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element. Therefore, between the P-type thermoelectric conversion elements and the N-type thermoelectric conversion elements, the deformation due to thermal expansion and contraction is not restricted by the first ceramic layer connected to the other side. Furthermore, the difference in thermal expansion and contraction of these P-type thermoelectric conversion elements and N-type thermoelectric conversion elements can deform the connecting portion of the first wiring layer or the first heat transfer metal layer connecting the two thermoelectric conversion elements to absorb the size. Variety. Therefore, the occurrence of thermal stress in each thermoelectric conversion element due to the difference in thermal expansion and contraction of each thermoelectric conversion element is suppressed. Therefore, the electrical connection between the two thermoelectric conversion elements connected by the first wiring layer can be well maintained, and the bonding reliability, thermal conductivity, and electrical conductivity of the thermoelectric conversion module can be well maintained.

作為本發明之熱電轉換模組之較佳實施態樣，以上述第2配線基板具有：第2配線，其係接合有相鄰的上述P型熱電轉換元件和上述N型熱電轉換元件；和第2陶瓷層，其係被接合於與該第2配線層之上述P型熱電轉換元件和上述N型熱電轉換元件之接合面相反之面，且被分離成複數，各第2陶瓷層在任一的上述P型熱電轉換元件和上述N型熱電轉換元件之間分離為佳。As a preferred embodiment of the thermoelectric conversion module of the present invention, the second wiring board includes: a second wiring to which the adjacent P-type thermoelectric conversion element and the N-type thermoelectric conversion element are bonded; 2 ceramic layers, which are bonded to the surface opposite to the bonding surface of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element of the second wiring layer, and are separated into plural numbers, and each second ceramic layer is on any one of the surfaces. Preferably, the above-mentioned P-type thermoelectric conversion element and the above-mentioned N-type thermoelectric conversion element are separated.

以上述第2配線層跨越是數第2陶瓷層彼此之間而被形成為佳。以上述第2陶瓷層獨立形成在每個上述熱電轉換元件為佳。以上述第2配線層為銀、鋁、銅或鎳為佳。It is preferable that the said 2nd wiring layer is formed over several 2nd ceramic layers. Preferably, the second ceramic layer is formed independently for each of the thermoelectric conversion elements. It is preferable that the said 2nd wiring layer is silver, aluminum, copper or nickel.

以上述第2配線基板具有複數上述第2配線層，和被接合於與上述第2陶瓷層之上述第2配線層之接合面相反之面之第2熱傳達金屬層，上述第2熱傳達金屬層係跨越相鄰之兩第2配線層之間而被形成，並且跨越相鄰的兩第2陶瓷層之間而被形成為佳。以上述第2熱傳達金屬層為鋁或銅為佳。The second wiring board includes a plurality of the second wiring layers, and a second heat transfer metal layer bonded to a surface opposite to the bonding surface of the second wiring layer of the second ceramic layer, and the second heat transfer metal The layer is preferably formed to span between two adjacent second wiring layers, and is preferably formed to span between two adjacent second ceramic layers. Preferably, the second heat transfer metal layer is made of aluminum or copper.

即使在與第1配線基板相向配置之第2配線基板中，藉由跨越被分離成複數之第2陶瓷層彼此之間而形成接合相鄰的P型熱電轉換元件和N型熱電轉換元件之第2配線層，且先在P型熱電轉換元件和N型熱電轉換元件之間使各第2陶瓷層分離，在被接合於第2配線層之P型熱電轉換元件和N型電轉換元件之間，彼此藉由對方側之第2陶瓷層，無隨著熱伸縮的變形被拘束之情形。再者，因相鄰的P型熱電轉換元件和N型熱電轉換元件之熱伸縮差，因可以使連接兩熱電轉換元件之間的第2配線層之連接部分變形而吸收尺寸變化，故可以抑制藉由各熱電轉換元件之熱伸縮差而產生在各熱電轉換元件內之熱應力的發生。Even in the second wiring board arranged to face the first wiring board, by spanning between the plurality of second ceramic layers separated into a plurality of second ceramic layers, a second connection between the adjacent P-type thermoelectric conversion elements and N-type thermoelectric conversion elements is formed. 2 wiring layers, and the second ceramic layers are first separated between the P-type thermoelectric conversion element and the N-type thermoelectric conversion element, and between the P-type thermoelectric conversion element and the N-type electrical conversion element bonded to the second wiring layer , and each other is not restricted by the deformation due to thermal expansion and contraction by the second ceramic layer on the other side. In addition, due to the difference in thermal expansion and contraction between the adjacent P-type thermoelectric conversion elements and N-type thermoelectric conversion elements, the connection portion of the second wiring layer connecting the two thermoelectric conversion elements can be deformed to absorb dimensional changes, so it can be suppressed. The generation of thermal stress in each thermoelectric conversion element occurs due to the difference in thermal expansion and contraction of each thermoelectric conversion element.

如此一來，因在被相向配置之第1配線基板和第2配線基板之雙方，可以吸收在各熱電轉換元件藉由熱伸縮差產生的尺寸變化，故可以良好地維持藉由第1配線層及第2配線層連接之兩熱電轉換元件間之電性連接，可以良好地維持熱電轉換模組之接合可靠性、熱傳導性及導電性。In this way, since the dimensional change caused by the difference in thermal expansion and contraction in each thermoelectric conversion element can be absorbed in both the first wiring board and the second wiring board which are arranged to face each other, the first wiring layer can be maintained satisfactorily. The electrical connection between the two thermoelectric conversion elements connected to the second wiring layer can well maintain the bonding reliability, thermal conductivity and electrical conductivity of the thermoelectric conversion module.

本發明之熱電轉換模組之製造方法具有：切割線形成工程，其係將用以從陶瓷母材分割複數第1陶瓷層之切割線形成在該陶瓷母材；金屬層形成工程，其係於上述切割線形成工程後，在上述陶瓷母材之一方之面，形成跨越藉由上述切割線被區劃的複數第1陶瓷層形成區域中之鄰接的兩第1陶瓷層形成區域的第1配線層；分割工程，其係於上述金屬層形成工程後，沿著上述切割線分割形成有上述第1配線層之上述陶瓷母材，形成接合有上述第1配線層和上述第1陶瓷層的第1配線基板；及接合工程，其係於上述分割工程後，在與上述第1配線層之各第1陶瓷層之接合面相反之面，接合線膨脹係數不同的P型熱電轉換元件和N型熱電轉換元件，製造串聯連接上述P型熱電轉換元件和上述N型熱電轉換元件之熱電轉換模組。The method for manufacturing a thermoelectric conversion module of the present invention includes: a cutting line forming process in which a cutting line for dividing a plurality of first ceramic layers from a ceramic base material is formed in the ceramic base material; and a metal layer forming process in which a cutting line is formed in the ceramic base material After the dicing line forming process, on one surface of the ceramic base material, a first wiring layer is formed that spans two adjacent first ceramic layer forming regions among the plurality of first ceramic layer forming regions partitioned by the dicing lines A division process, which is performed after the above-mentioned metal layer forming process, dividing the above-mentioned ceramic base material with the above-mentioned first wiring layer formed along the above-mentioned cutting line, and forming the above-mentioned first wiring layer and the above-mentioned first ceramic layer bonded to the first ceramic layer. A wiring board; and a bonding process for bonding a P-type thermoelectric conversion element and an N-type thermoelectric conversion element having different linear expansion coefficients on the surface opposite to the bonding surface of each first ceramic layer of the first wiring layer after the above-mentioned dividing process For conversion elements, a thermoelectric conversion module in which the P-type thermoelectric conversion element and the N-type thermoelectric conversion element are connected in series is manufactured.

在接合(搭載)多數上述熱電轉換元件的熱電轉換模組中，非常難以使各個第1陶瓷層整齊排列而接合於第1配線層。但是，如本發明之製造方法般，於將第1配線層接合於陶瓷母材之後，藉由沿著切割線分割陶瓷母材，可以形成具有容易配列在期望的圖案之第1配線層，和被個片化之第1陶瓷層的第1配線基板，可以圓滑地製造出熱電轉換模組。再者，因被個片化之複數陶瓷層之間，藉由第1配線層被連接，故可以一體地處理第1配線基板，可以提升處理性。In a thermoelectric conversion module in which many of the above-mentioned thermoelectric conversion elements are joined (mounted), it is very difficult to align the first ceramic layers and join them to the first wiring layer. However, as in the manufacturing method of the present invention, after the first wiring layer is bonded to the ceramic base material, the ceramic base material is divided along the dicing lines to form the first wiring layer having a desired pattern easily arranged, and A thermoelectric conversion module can be produced smoothly by the first wiring board of the first ceramic layer being individualized. Furthermore, since the plurality of individualized ceramic layers are connected by the first wiring layer, the first wiring board can be handled integrally, and the handleability can be improved.

作為本發明之熱電轉換模組之製造方法的較佳實施態樣，上述接合工程被設成先在被相向配置的一組加壓板之間，配置分別重疊上述第1配線基板之上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之挾持體，藉由在其疊層方向加壓該挾持體之狀態下加熱該挾持體，分別接合上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之工程，在上述接合工程中，以先在上述P型電轉換元件和上述N型熱電轉換元件之中，至少線膨脹係數小之一方之熱電轉換元件和上述加壓板之間，配置補足構件，先使在上述第1配線基板和上述P型熱電轉換元件及上述N型熱電轉換元件之接合時的上述一方之熱電轉換元件及上述補足構件之高度和上述另一方之熱電轉換元件及上述補足構件之高度的差，小於上述一方之熱電轉換元件之高度和上述另一方之熱電轉換元件之高度的差為佳。As a preferred embodiment of the method for manufacturing a thermoelectric conversion module according to the present invention, the bonding process is performed by arranging the first above-mentioned first wiring boards respectively overlapping the above-mentioned first wiring boards between a set of pressure plates arranged opposite to each other. The wiring layer and the holding body of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element are respectively bonded to the first wiring layer and the P-type by heating the holding body in a state where the holding body is pressed in the lamination direction. Type thermoelectric conversion element and the above-mentioned N-type thermoelectric conversion element, in the above-mentioned bonding process, among the above-mentioned P-type electric conversion element and the above-mentioned N-type thermoelectric conversion element, at least the thermoelectric conversion element whose linear expansion coefficient is smaller Between the above-mentioned pressing plate, a supplementary member is arranged, and the height of the above-mentioned one thermoelectric conversion element and the above-mentioned supplementary member during the bonding of the above-mentioned first wiring substrate and the above-mentioned P-type thermoelectric conversion element and the above-mentioned N-type thermoelectric conversion element. It is preferable that the difference between the height of the other thermoelectric conversion element and the complementary member is smaller than the difference between the height of the one thermoelectric conversion element and the height of the other thermoelectric conversion element.

因第1配線基板具有被個片化之複數第1陶瓷層，故在接合工程中加熱挾持體之時，各第1陶瓷層互相不會拘束對方側，可以追隨被疊層於各部位之P型熱電轉換元件和N型熱電轉換元件之熱膨脹。於是，在接合工程中，藉由先在P型熱電轉換元件和N型熱電轉換元件之中，至少線膨脹係數小之一方之熱電轉換元件和加壓板之間，配置補足構件，在接合時，可以使線膨脹係數大之另一方之熱電轉換元件之高度，和一方之熱電轉換元件及補足構件之高度接近。因此，在一組之加壓板之間，可以使各熱電轉換元件和第1配線層密接而均勻地加壓。因此，可以確實地接合各熱電轉換元件和第1配線基板，可以提高熱電轉換模組之接合可靠性。Since the first wiring board has a plurality of first ceramic layers that are individually sliced, when the clamping body is heated during the bonding process, the first ceramic layers do not bind each other to each other, and can follow the P laminated on each part. Thermal expansion of N-type thermoelectric conversion elements and N-type thermoelectric conversion elements. Therefore, in the bonding process, by first arranging a complementary member between the thermoelectric conversion element and the pressure plate of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element, at least one of which has a smaller coefficient of linear expansion, at the time of bonding , the height of the thermoelectric conversion element on the other side with the larger coefficient of linear expansion can be made close to the height of the thermoelectric conversion element and the complementary member on the one side. Therefore, the thermoelectric conversion elements and the first wiring layer can be brought into close contact with each other between the pressure plates of a set, and the pressure can be uniformly pressed. Therefore, each thermoelectric conversion element and the 1st wiring board can be joined reliably, and the joining reliability of a thermoelectric conversion module can be improved.

作為本發明之熱電轉換模組之製造方法的較佳實施態樣，以上述接合工程被設成先在被相向配置的一組加壓板之間，配置分別重疊上述第1配線基板之上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之挾持體，藉由在其疊層方向加壓該挾持體之狀態下加熱該挾持體，分別接合上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之工程，在上述接合工程中，先在上述疊層方向重疊配置偶數個上述挾持體，並且在上述疊層方向配置同數量的上述P型熱電轉換元件和上述N型熱電轉換元件為佳。As a preferred embodiment of the method for manufacturing a thermoelectric conversion module of the present invention, in the bonding process, the above-mentioned first wiring boards are respectively arranged between a set of pressure plates arranged opposite to each other. 1. The wiring layer and the holding body of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element are respectively bonded to the first wiring layer and the above-mentioned holding body by heating the holding body in a state where the holding body is pressed in the lamination direction. In the process of the P-type thermoelectric conversion element and the above-mentioned N-type thermoelectric conversion element, in the above-mentioned bonding process, firstly, an even number of the clamping bodies are arranged in the lamination direction, and the same number of the P-type thermoelectric conversion elements are arranged in the lamination direction. The element and the above-mentioned N-type thermoelectric conversion element are preferable.

例如，藉由使各挾持體之中，在疊層方向鄰接之兩個挾持體之各第1配線基板彼此相向配置，可以在第1配線基板之面方向之各熱電轉換元件之配置處，分別於疊層方向各配置一個(同數量)P型熱電轉換元件和N型熱電轉換元件。如此一來，藉由在疊層方向重疊配置偶數個挾持體，可以總是以相同數量重疊配置P型熱電轉換元件和N型熱電轉換元件之中，線膨脹係數小的一方之熱電轉換元件，和線膨脹係數大的另一方之熱電轉換元件。依此，在接合(加熱)時，可以使重疊複數個的挾持體之高度在面方向均勻。因此，在一組之加壓板之間，可以使各熱電轉換元件和第1配線層密接而均勻地加壓。因此，可以確實地接合各熱電轉換元件和第1配線基板，可以提高熱電轉換模組之接合可靠性。再者，藉由如此地疊層複數挾持體，可以在一次的接合工程中，製造複數熱電轉換模組。For example, by arranging the first wiring boards of the two holding bodies adjacent to each other in the lamination direction among the holding bodies to face each other, it is possible to arrange the thermoelectric conversion elements in the surface direction of the first wiring board, respectively. One (same number) of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements are each arranged in the stacking direction. In this way, by arranging an even number of clamping bodies in the stacking direction, it is possible to always overlap the P-type thermoelectric conversion element and the N-type thermoelectric conversion element, the thermoelectric conversion element with the smaller coefficient of linear expansion can be arranged in the same number. and the thermoelectric conversion element with the larger coefficient of linear expansion. In this way, at the time of bonding (heating), the heights of the plurality of clamp bodies can be made uniform in the plane direction. Therefore, the thermoelectric conversion elements and the first wiring layer can be brought into close contact with each other between the pressure plates of a set, and the pressure can be uniformly pressed. Therefore, each thermoelectric conversion element and the 1st wiring board can be joined reliably, and the joining reliability of a thermoelectric conversion module can be improved. Furthermore, by stacking a plurality of clamping bodies in this way, a plurality of thermoelectric conversion modules can be manufactured in one bonding process.

作為本發明之熱電轉換模組之製造方法之較佳實施型態，以在上述接合工程中，於各挾持體之間配設石墨薄片為佳。As a preferred embodiment of the manufacturing method of the thermoelectric conversion module of the present invention, in the above-mentioned bonding process, graphite sheets are preferably arranged between the clamping bodies.

藉由使具有緩衝性之石墨薄片介於各挾持體之間，可以在第1配線基板之面方向之各熱電轉換元件之配置處，補正各個傾斜，可以更均勻地加壓各熱電轉換元件和第1配線基板。因此，可以確實地接合各熱電轉換元件和第1配線基板，可以提高熱電轉換模組之接合可靠性。By interposing the graphite sheet with cushioning properties between the holding bodies, each inclination can be corrected in the arrangement of the thermoelectric conversion elements in the surface direction of the first wiring board, and the thermoelectric conversion elements and the thermoelectric conversion elements can be pressurized more uniformly. the first wiring board. Therefore, each thermoelectric conversion element and the 1st wiring board can be joined reliably, and the joining reliability of a thermoelectric conversion module can be improved.

作為本發明之熱電轉換模組之製造方法的較佳實施態樣，以上述金屬層形成工程被設成在上述陶瓷母材之上述一方之面，形成複數上述第1配線層，並且在上述陶瓷母材之另一方之面形成第1熱傳達金屬層的工程，在上述金屬層形成工程中，跨越相鄰的兩第1配線層之間形成上述第1熱傳達金屬層，並且跨越相鄰的兩第1陶瓷層形成區域之間而形成。As a preferred embodiment of the method for manufacturing a thermoelectric conversion module of the present invention, the metal layer forming process is set so as to form a plurality of the first wiring layers on the one side of the ceramic base material, and to form the first wiring layers on the ceramic base material. The process of forming the first heat transfer metal layer on the other side of the base material, in the metal layer forming process, the first heat transfer metal layer is formed across the adjacent two first wiring layers, and the first heat transfer metal layer is formed across the adjacent It is formed between the two first ceramic layer forming regions.

即使在具有複數第1配線層之第1配線基板中，也藉由第1熱傳達金屬層而連結各第1配線層之間。因此，可以一體性處理各第1配線層，可以提升第1配線基板之處理性。再者，於將第1配線層和第1熱傳達金屬層接合於陶瓷母材之後，藉由沿著切割線分割陶瓷母材，可以形成具有容易配列在期望的圖案之第1配線層，和被個片化之第1陶瓷層的第1配線基板，可以圓滑地製造出熱電轉換模組。Even in the first wiring board having a plurality of first wiring layers, the first wiring layers are connected by the first heat transfer metal layer. Therefore, each of the first wiring layers can be processed integrally, and the handling properties of the first wiring board can be improved. Furthermore, after the first wiring layer and the first heat transfer metal layer are joined to the ceramic base material, by dividing the ceramic base material along the dicing lines, the first wiring layer having a pattern easily arranged in a desired manner can be formed, and A thermoelectric conversion module can be produced smoothly by the first wiring board of the first ceramic layer being individualized.

再者，在接合工程中，藉由使石墨薄片介於各挾持體之間，可以防止各熱電轉換模組彼此被接合，可以容易使各熱電轉換模組之間解體。因此，可以穩定製造熱電轉換模組。Furthermore, in the joining process, by interposing the graphite sheets between the holding bodies, the thermoelectric conversion modules can be prevented from being joined to each other, and the thermoelectric conversion modules can be easily disassembled. Therefore, the thermoelectric conversion module can be stably manufactured.

作為本發明之熱電轉換模組之製造方法之較佳實施態樣，以在上述切割線形成工程中，上述切割線形成在上述陶瓷母材之一方之面上的除上述第1配線層之接合預定區域之外的非接合部為佳。再者，以切割線形成在上述陶瓷母材之另一方之面的除上述第1熱傳達金屬層之接合預定區域之外的非接合部為佳。As a preferred embodiment of the method for manufacturing a thermoelectric conversion module of the present invention, in the above-mentioned dicing line forming process, the dicing line is formed on one surface of the ceramic base material except for the junction of the first wiring layer. A non-joint portion outside the predetermined area is preferable. In addition, it is preferable that a dicing line is formed in the non-joining part of the other surface of the said ceramic base material except the joining area|region of the said 1st heat-transfer metal layer.

藉由切割線先形成在第1配線層之非接合部或第1熱傳達金屬層之非接合部，或是該些非接合部之雙方，在該些陶瓷母材之雙面，形成複數切割線，可以區劃第1陶瓷層形成區域。在切割線上重疊第1配線層或第1熱傳達金屬層而予以接合之情況，難以沿著切割線分割陶瓷母材。但是，藉由在與第1配線層或第1熱傳達金屬層之接合面相反之面(相反面)，形成切割線，容易沿著切割線分割陶瓷母材。因此，可以形成具有容易被配列成期望的圖案之第1配線層，和被個片化之第1陶瓷層的第1配線基板，可以圓滑地製造熱電轉換模組。A plurality of cuts are formed on both sides of the ceramic base materials by first forming dicing lines on the non-joining portion of the first wiring layer, the non-joining portion of the first heat transfer metal layer, or both of these non-joining portions. The line can demarcate the first ceramic layer formation region. When the 1st wiring layer or the 1st heat-transfer metal layer is overlap|superposed on a dicing line and it joins, it is difficult to divide|segment a ceramic base material along a dicing line. However, by forming a dicing line on the surface (opposite surface) opposite to the bonding surface of the first wiring layer or the first heat transfer metal layer, the ceramic base material can be easily divided along the dicing line. Therefore, the first wiring board having the first wiring layer that can be easily arranged in a desired pattern and the first ceramic layer that is individualized can be formed, and the thermoelectric conversion module can be manufactured smoothly.

以切割線不僅形成在第1配線層之非接合部及第1熱傳達金屬層之非接合部，也以先形成在第1配線層之接合部及第1熱傳達金屬層之接合部為佳。藉由也先在第1配線層之接合部及第1熱傳達金屬層之接合部形成切割線，並且可容易分割陶瓷母材。It is preferable to form the dicing line not only on the non-joint portion of the first wiring layer and the non-joint portion of the first heat transfer metal layer, but also on the joint portion of the first wiring layer and the joint portion of the first heat transfer metal layer. . The ceramic base material can be easily divided by forming a dicing line also at the junction of the first wiring layer and the junction of the first heat transfer metal layer.

作為本發明之熱電轉換模組之製造方法之較佳實施態樣，以在上述切割線形成工程中，上述切割線以貫通上述陶瓷母材之相向的邊彼此的直線來形成為佳。As a preferred embodiment of the method for manufacturing a thermoelectric conversion module of the present invention, in the cutting line forming process, the cutting line is preferably formed as a straight line penetrating the opposing sides of the ceramic base material.

藉由設成貫通陶瓷母材之相向的邊彼此的單純切割線，可以沿著切割線圓滑地分割陶瓷母材。因此，可以簡化製造工程。 [發明之效果]The ceramic base material can be smoothly divided along the cut line by providing a simple cut line penetrating the opposing sides of the ceramic base material. Therefore, the manufacturing process can be simplified. [Effect of invention]

若藉由本發明時，可以防止熱電轉換元件之熱伸縮性差所致的破壞，可以提供接合可靠性、熱傳導性及導電性優良的熱電轉換模組。According to the present invention, the thermoelectric conversion element can be prevented from being damaged due to poor thermal expansion and contraction properties, and a thermoelectric conversion module excellent in bonding reliability, thermal conductivity and electrical conductivity can be provided.

以下，針對本發明之實施型態，一面參考圖面一面予以說明。圖1表示第1實施型態之熱電轉換模組101。該熱電轉換模組101被設成組合且配列複數熱電轉換元件3、4，熱電轉換元件3、4之P型熱電轉換元件3和N型熱電轉換元件4經由被配設在其一端側(圖1中為下側)之第1配線基板2A而被電性串聯連接的構成。圖中，P型熱電轉換元件3以「P」表示記載，N型熱電轉換元件4以「N」表示記載。另外，在熱電轉換模組101中，設成從各熱電轉換元件3、4之其他端部直接引出朝外部的配線91的構成。Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows the thermoelectric conversion module 101 of the first embodiment. The thermoelectric conversion module 101 is configured to combine and arrange a plurality of thermoelectric conversion elements 3 and 4, and the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 of the thermoelectric conversion elements 3 and 4 are arranged on one end side of the thermoelectric conversion element 3 and 4 (Fig. 1 is a configuration in which the first wiring board 2A of the lower side is electrically connected in series. In the figure, the P-type thermoelectric conversion element 3 is indicated by "P", and the N-type thermoelectric conversion element 4 is indicated by "N". In addition, in the thermoelectric conversion module 101 , the wiring 91 to the outside is directly drawn from the other end portions of the thermoelectric conversion elements 3 and 4 .

P型熱電轉換元件3及N型熱電轉換元件4係藉由碲化合物、方鈷礦、填充方鈷礦、赫斯勒(Heusler)、半赫斯勒，晶籠化合物、矽化物、氧化物、矽鍺等之燒結體所構成。另外，有藉由摻雜物能取得P型和N型之雙方的化合物，和僅持有P型或N型中之任一方的性質的化合物。The P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are made of tellurium compound, skutterudite, filled skutterudite, Heusler, half-Heusler, cage compound, silicide, oxide, It is composed of a sintered body such as silicon germanium. In addition, there are compounds that can acquire both the P-type and the N-type by the dopant, and compounds that possess only the properties of either the P-type or the N-type.

作為P型熱電轉換元件3之材料，使用Bi2 Te3 、Sb2 Te3 、PbTe、TAGS(=Ag‐Sb‐Ge‐Te)、Zn4 Sb3 、CoSb3 、CeFe4 Sb12 、Yb14 MnSb11 、FeVAl、MnSi1.73 、FeSi2 、Nax CoO2 、Ca3 Co4 O7 、Bi2 Sr2 Co2 O7 、SiGe等。As the material of the P-type thermoelectric conversion element 3, Bi 2 Te 3 , Sb 2 Te 3 , PbTe, TAGS (=Ag-Sb-Ge-Te), Zn 4 Sb 3 , CoSb 3 , CeFe 4 Sb 12 , Yb 14 were used MnSb 11 , FeVAl, MnSi 1.73 , FeSi 2 , Na x CoO 2 , Ca 3 Co 4 O 7 , Bi 2 Sr 2 Co 2 O 7 , SiGe, and the like.

作為N型熱電轉換元件4之材料，使用Bi2 Te3 、PbTe、La3 Te4 、CoSb3 、FeVAl、ZrNiSn、Ba8 Al16 Si30 、Mg2 Si、FeSi2 、SrTiO3 、CaMnO3 、ZnO、SiGe等。As the material of the N-type thermoelectric conversion element 4, Bi 2 Te 3 , PbTe, La 3 Te 4 , CoSb 3 , FeVAl, ZrNiSn, Ba 8 Al 16 Si 30 , Mg 2 Si, FeSi 2 , SrTiO 3 , CaMnO 3 , ZnO, SiGe, etc.

在該些材料中，對環境影影響小，資源埋藏量也豐富的矽化物材料受到注目。作為中溫型(300℃～500℃程度)之熱電轉換模組之熱電轉換材料，P型熱電轉換元件3使用矽化錳(MnSi1.73 )，N型熱電轉換元件4使用矽化鎂(Mg2 Si)。P型熱電轉換元件3所使用的矽化錳之線膨脹係數為10.8×10-6 /K左右，N型熱電轉換元件4所使用的矽化錳之線膨脹係數為17.0×10-6 /K左右。因此，在矽化錳之P型熱電轉換元件3和矽化錳之N型熱電轉換元件4之組合中，P型熱電轉換元件3之線膨脹係數小於N型熱電轉換元件4之線膨脹係數。Among these materials, silicide materials that have little impact on the environment and are rich in resource burial are attracting attention. As the thermoelectric conversion material of the thermoelectric conversion module of the medium temperature type (about 300°C to 500°C), the P-type thermoelectric conversion element 3 uses manganese silicide (MnSi 1.73 ), and the N-type thermoelectric conversion element 4 uses magnesium silicide (Mg 2 Si) . The linear expansion coefficient of the manganese silicide used in the P-type thermoelectric conversion element 3 is about 10.8×10 −6 /K, and the linear expansion coefficient of the manganese silicide used in the N-type thermoelectric conversion element 4 is about 17.0×10 −6 /K. Therefore, in the combination of the P-type thermoelectric conversion element 3 of manganese silicide and the N-type thermoelectric conversion element 4 of manganese silicide, the linear expansion coefficient of the P-type thermoelectric conversion element 3 is smaller than that of the N-type thermoelectric conversion element 4 .

該些熱電轉換元件3、4被形成例如橫剖面為正方形(例如，一邊為1mm～8mm)之角柱形，橫剖面為圓形(例如，直徑為1mm～8mm)之圓柱狀，長度(沿著圖1之上下方向的長度)為1mm～10mm。P型熱電轉換元件3之長度和N型熱電轉換元件4之長度被設定成在常溫(25℃)中相等(幾乎相同長度)。另外，在各熱電於轉換元件3、4之兩端面，形成由鎳、銀、金等所構成之金屬化層41。金屬化層41之層厚被設成1μm以上100μm以下。The thermoelectric conversion elements 3 and 4 are formed, for example, in a square column shape with a square cross section (for example, one side is 1 mm to 8 mm), a cylindrical shape with a circular cross section (for example, a diameter of 1 mm to 8 mm), and a length (along the length of 1 mm to 8 mm). The length in the up-down direction in FIG. 1 ) is 1 mm to 10 mm. The length of the P-type thermoelectric conversion element 3 and the length of the N-type thermoelectric conversion element 4 are set to be equal (almost the same length) at normal temperature (25° C.). In addition, metallization layers 41 made of nickel, silver, gold, or the like are formed on both end surfaces of the thermoelectric conversion elements 3 and 4 . The thickness of the metallization layer 41 is set to be 1 μm or more and 100 μm or less.

第1配線基板2A之構成係如圖1所示般，被設成具有接合有熱電轉換元件3、4之第1配線層11A，和被接合於與第1配線層11A之熱電轉換元件3、4之接合面相反之面之第1陶瓷層21A，和被接合於與第1陶瓷層21A之配線層11A之接合面相反之面的第1熱傳達金屬層32A。另外，熱傳達金屬層32A並非必要的構成要素。As shown in FIG. 1 , the first wiring board 2A is configured to have a first wiring layer 11A to which the thermoelectric conversion elements 3 and 4 are bonded, and the thermoelectric conversion elements 3 and 4 bonded to the first wiring layer 11A. The first ceramic layer 21A on the surface opposite to the bonding surface of 4, and the first heat transfer metal layer 32A bonded on the surface opposite to the bonding surface of the wiring layer 11A of the first ceramic layer 21A. In addition, the heat transfer metal layer 32A is not an essential component.

第1陶瓷層21A係藉由一般的陶瓷，例如氧化鋁(Al2 O3 )、氮化鋁(AlN)、氮化矽(Si3 N4 )等之熱傳導性高，且具有絕緣性之構件而被形成。再者，第1陶瓷層21A被分離成複數(在圖1中為2個)，獨立形成在每個熱電轉換元件3、4。第1陶瓷層21A被形成例如俯視正方形狀。再者，第1陶瓷層21A之厚度被設成0.1mm以上2mm以下。The first ceramic layer 21A is made of general ceramics such as aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), silicon nitride (Si 3 N 4 ), etc., which have high thermal conductivity and insulating properties. being formed. Furthermore, the first ceramic layers 21A are separated into plural numbers (two in FIG. 1 ), and are formed independently for each of the thermoelectric conversion elements 3 and 4 . The first ceramic layer 21A is formed, for example, in a square shape in plan view. In addition, the thickness of 21 A of 1st ceramic layers is set to 0.1 mm or more and 2 mm or less.

在第1配線基板2A設置有一個俯視長方形狀之第1配線層11A，並且設置有2個俯視正方形狀之第1熱傳達金屬層32A。第1配線層11A係連接相鄰的P型熱電轉換元件3和N型熱電轉換元件4之間而被形成，並且，跨越2個第1陶瓷層21A、21A彼此之間而被形成。另外，第1熱傳達金屬層32A獨立形成在每個第1陶瓷層21A。One first wiring layer 11A having a rectangular shape in plan view is provided on the first wiring board 2A, and two first heat transfer metal layers 32A having a square shape in plan view are provided. The first wiring layer 11A is formed to connect the adjacent P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 , and is formed so as to span between the two first ceramic layers 21A and 21A. In addition, the first heat transfer metal layer 32A is independently formed for each of the first ceramic layers 21A.

第1配線層11A係由銀、鋁、銅或鎳為主成分之材料所構成，被形成平面狀。作為第1配線層11A之材料，以純度99.99質量%以上之鋁(所謂的4N鋁)或純度99.99質量%以上之銅為佳。再者，作為連接P型熱電轉換元件3和N型熱電轉換元件4之第1配線層11A之厚度，以設成0.1mm以上2mm以下為佳。The first wiring layer 11A is made of a material mainly composed of silver, aluminum, copper, or nickel, and is formed in a planar shape. The material of the first wiring layer 11A is preferably aluminum with a purity of 99.99 mass % or more (so-called 4N aluminum) or copper with a purity of 99.99 mass % or more. Furthermore, the thickness of the first wiring layer 11A connecting the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 is preferably 0.1 mm or more and 2 mm or less.

第1配線層11A使用純度高之純鋁或純銅等之軟的材料，形成比較薄的厚度，依此可以使連結相鄰的兩熱電轉換元件3、4之間而設置的平面狀之第1配線層11A隨著兩熱電轉換元件3、4之熱伸縮容易變形、追隨，可以在該些熱電轉換元件3、4之間容易彎曲。另外，因鋁及銅比銀便宜，藉由鋁或銅成形第1配線層11A，可以便宜地製造熱電轉換模組101。再者，藉由鋁或銅形成第1配線層11A，可以良好地維持藉由第1配線層11A被連接之兩熱電轉換元件3、4間之熱傳導性或導電性。The first wiring layer 11A is formed with a relatively thin thickness by using a soft material such as pure aluminum or pure copper with high purity, so that the first wiring layer 11A in the form of a plane provided to connect the two adjacent thermoelectric conversion elements 3 and 4 can be formed. The wiring layer 11A is easily deformed and follows the thermal expansion and contraction of the two thermoelectric conversion elements 3 and 4 , and can be easily bent between the thermoelectric conversion elements 3 and 4 . In addition, since aluminum and copper are cheaper than silver, the thermoelectric conversion module 101 can be manufactured inexpensively by molding the first wiring layer 11A with aluminum or copper. Furthermore, by forming the first wiring layer 11A with aluminum or copper, thermal conductivity or electrical conductivity between the two thermoelectric conversion elements 3 and 4 connected by the first wiring layer 11A can be well maintained.

再者，藉由第1配線層11A使用銀，可以良好地維持熱電傳導性或導電性，且即使在將厚度形成比較薄之情況，亦可以降低電阻。再者，包含第1配線層11A之第1配線基板2A被配置在熱電轉換模組101之高溫側之情況等，可以提升耐熱性或耐氧化性。另外，以銀形成第1配線層11A之情況，第1配線層11A之厚度以設成10μm以上200μm以下為佳。Furthermore, by using silver for the first wiring layer 11A, thermoelectric conductivity and electrical conductivity can be maintained favorably, and resistance can be reduced even when the thickness is relatively thin. Furthermore, when the first wiring board 2A including the first wiring layer 11A is arranged on the high temperature side of the thermoelectric conversion module 101, heat resistance and oxidation resistance can be improved. Further, when the first wiring layer 11A is formed of silver, the thickness of the first wiring layer 11A is preferably 10 μm or more and 200 μm or less.

再者，與鋁或銀相比，雖然鎳之耐氧化性差，但是具有比較良好的耐熱性。再者，鎳比銀便宜，並且元件接合性比較好。因此，藉由第1配線層11A使用鎳之情況，可以構成性能和價格的平衡比較優的熱電轉換模組101。再者，包含第1配線層11A之第1配線基板2A被配置在熱電轉換模組101之高溫側之情況等，可以提升耐熱性或耐氧化性。另外，以鎳形成第1配線層11A之情況，第1配線層11A之厚度以設成0.1μm以上1μm以下為佳。Furthermore, although nickel has inferior oxidation resistance compared with aluminum or silver, it has comparatively favorable heat resistance. Furthermore, nickel is cheaper than silver, and the element bondability is relatively good. Therefore, by using nickel for the first wiring layer 11A, the thermoelectric conversion module 101 can be constituted with an excellent balance between performance and price. Furthermore, when the first wiring board 2A including the first wiring layer 11A is arranged on the high temperature side of the thermoelectric conversion module 101, heat resistance and oxidation resistance can be improved. Further, when the first wiring layer 11A is formed of nickel, the thickness of the first wiring layer 11A is preferably 0.1 μm or more and 1 μm or less.

再者，第1熱傳達金屬層32A係由以鋁或銅為主成分之材料(鋁、鋁合金、銅或銅合金)所構成，被形成平面狀。作為該第1熱傳達金屬層32A之材料，以純度99.99質量%以上之鋁(所謂的4N鋁)或純度99.9質量%以上之銅為佳。如此一來，藉由第1熱傳達金屬層32A，使用純度高之純鋁或純銅等之軟的材料，於第1熱傳達金屬層32A接觸於熱源或冷卻源之時，提升追隨性，且提升熱傳達性。因此，不會有降低熱電轉換模組101之熱電交換性能之情形。Further, the first heat transfer metal layer 32A is made of a material (aluminum, aluminum alloy, copper, or copper alloy) mainly composed of aluminum or copper, and is formed in a planar shape. As the material of the first heat transfer metal layer 32A, aluminum with a purity of 99.99 mass % or more (so-called 4N aluminum) or copper with a purity of 99.9 mass % or more is preferable. In this way, by using a soft material such as pure aluminum or pure copper with high purity for the first heat transfer metal layer 32A, when the first heat transfer metal layer 32A comes into contact with a heat source or a cooling source, the followability is improved, and Improve heat transfer. Therefore, the thermoelectric exchange performance of the thermoelectric conversion module 101 is not reduced.

另外，第1配線層11A或第1熱傳達金屬層32A之大小(平面尺寸)，係因應被連接於第1配線層11A之熱電轉換元件3、4之大小，被設定成也和熱電轉換元件3、4之端面面積相等或稍大。再者，第1陶瓷層21A被形成可以在第1配線層11A、各1熱傳達金屬層32A、32A之周圍，及各1熱傳達金屬層32A、32A之間，確保寬度0.1mm以上之空間之程度的平面形狀。In addition, the size (planar size) of the first wiring layer 11A or the first heat transfer metal layer 32A is set so as to match the size of the thermoelectric conversion elements 3 and 4 connected to the first wiring layer 11A. The area of the end face of 3 and 4 is equal or slightly larger. Furthermore, the first ceramic layer 21A is formed so as to ensure a space of 0.1 mm or more in width around the first wiring layer 11A, the heat transfer metal layers 32A and 32A, and between the heat transfer metal layers 32A and 32A. degree of flat shape.

接著，針對構成如此之熱電轉換模組101之製造方法予以說明。本實施型態之熱電轉換模組之製造方法係如圖2之流程圖所示般，藉由複數工程S11～S14所構成。再者，在圖3A～D及圖4A～D表示本實施型態之熱電轉換模組之製造方法之各工程之一例。Next, the manufacturing method which comprises such a thermoelectric conversion module 101 is demonstrated. As shown in the flowchart of FIG. 2 , the manufacturing method of the thermoelectric conversion module of this embodiment is constituted by a plurality of processes S11 to S14 . 3A-D and FIG. 4A-D show an example of each process of the manufacturing method of the thermoelectric conversion module of this embodiment.

(切割線形成工程) 　　首先，如圖3A及圖4A所示般，在構成第1陶瓷層21A、21A之大型陶瓷母材201，形成分割複數第1陶瓷層21A、21A之切割線(分割溝)202(切割線形成工程S11)。而且，藉由形成切割線202，在陶瓷母材201區劃複數(2個)第1陶瓷層形成區域203、203(Cutting Line Formation Process) First, as shown in FIGS. 3A and 4A , in the large ceramic base material 201 constituting the first ceramic layers 21A and 21A, dicing lines (dividing grooves) for dividing the plurality of first ceramic layers 21A and 21A are formed. ) 202 (cut line forming process S11). Then, by forming the dicing lines 202, the ceramic base material 201 is divided into plural (two) first ceramic layer forming regions 203 and 203

切割線202係例如圖3A所示般，可以藉由雷射加工形成。具體而言，藉由在陶瓷母材201之單面，照射CO2 雷射、YAG雷射、YVO4 雷射、YLF雷射等之雷射光L，可以進行切割線202之加工。在根據雷射加工的切割線202之加工中，切削加工在陶瓷母材201之表面被照射雷射光L之部分，形成切割線202。The cutting line 202 can be formed by laser processing, as shown in FIG. 3A . Specifically, the cutting line 202 can be processed by irradiating one side of the ceramic base material 201 with laser light L such as a CO 2 laser, a YAG laser, a YVO 4 laser, and a YLF laser. In the processing of the cutting line 202 by laser processing, the cutting line 202 is formed by cutting a portion of the surface of the ceramic base material 201 irradiated with the laser light L.

切割線202係如圖4A所示般，至少形成在陶瓷母材201之單面。具體而言，並非跨越在2個第1陶瓷層21A、21A而被形成之第1配線層11A的接合面，在其相反側之面(相反面)形成切割線202。即是，如圖4C所示般，在陶瓷母材201之一方之面接合第1配線層11A之情況，切割線202如圖4A所示般，先形成在陶瓷母材201之另一方之面的除第1熱傳達金屬層32A之接合預定區域之外的非接合部。另外，切割線202並非僅形成在第1配線層11A之非接合部及第1熱傳達金屬層32A之非接合部，亦形成在第1配線11A之接合部，亦可以形成在陶瓷母材201之兩面。The cutting line 202 is formed on at least one side of the ceramic base material 201 as shown in FIG. 4A . Specifically, the dicing line 202 is not formed on the opposite side (opposite surface) of the bonding surface of the first wiring layer 11A formed on the two first ceramic layers 21A and 21A. That is, when the first wiring layer 11A is bonded to one surface of the ceramic base material 201 as shown in FIG. 4C , the dicing line 202 is first formed on the other surface of the ceramic base material 201 as shown in FIG. 4A . The non-joining portion of the first heat transfer metal layer 32A other than the joint planned region. In addition, the dicing line 202 is not only formed on the non-joining portion of the first wiring layer 11A and the non-joining portion of the first heat transfer metal layer 32A, but also formed on the joining portion of the first wiring 11A, and may also be formed on the ceramic base material 201 both sides.

再者，切割線202係如圖4A所示般，以貫通陶瓷母材201之相向的邊彼此之直線形成。在此情況下，在陶瓷母材201形成貫通彼此之一條切割線202，陶瓷母材201藉由一條切割線202被分割為二，整齊排列形成被區劃成第1陶瓷層21A、21A之外形大小的2個第1陶瓷層形成區域203、203。In addition, as shown in FIG. 4A , the cutting line 202 is formed as a straight line penetrating the opposing sides of the ceramic base material 201 . In this case, a cutting line 202 is formed on the ceramic base material 201 penetrating each other, the ceramic base material 201 is divided into two by one cutting line 202, and the ceramic base material 201 is arranged in an orderly manner to be divided into the outer size of the first ceramic layers 21A and 21A. The two first ceramic layer forming regions 203 and 203 .

另外，雖然省略圖示，但是於雷射加工後，藉由浸漬於蝕刻液，洗淨形成有切割線202之陶瓷母材201。In addition, although illustration is abbreviate|omitted, after laser processing, the ceramic base material 201 in which the dicing line 202 was formed is wash|cleaned by immersing in an etchant.

再者，切割線形成工程S11並非被限定於雷射加工者，亦可以藉由鑽石劃線器等之其他的加工方法來實施。In addition, the dicing line forming process S11 is not limited to a laser processor, and can be implemented by other processing methods such as a diamond scriber.

(金屬層形成工程) 　　於切割線形成工程S11後，在陶瓷母材201之一方之面形成第1配線層11A，在另一方之面形成第1熱傳達金屬層32A(金屬層形成工程S12)。例如，如圖3B及圖4B所示般，在陶瓷母材201之一方之面，即是無形成切割線202之面，接合成為第1配線層11A之金屬板301，並且在形成有切割線202之另一方之面接合成為第1熱傳達金屬層32A之金屬板302。該些金屬板301和陶瓷母材201、陶瓷材201和金屬板302的接合，使用硬焊材等進行。(Metal layer forming process) After the dicing line forming process S11, the first wiring layer 11A is formed on one surface of the ceramic base material 201, and the first heat transfer metal layer 32A is formed on the other surface (metal layer forming process S12) . For example, as shown in FIGS. 3B and 4B , on one surface of the ceramic base material 201 , that is, the surface on which the dicing line 202 is not formed, the metal plate 301 that forms the first wiring layer 11A is joined, and the dicing line is formed on the side of the ceramic base material 201 . The other surface of 202 is joined to become the metal plate 302 of the first heat transfer metal layer 32A. The metal plate 301 and the ceramic base material 201, and the ceramic material 201 and the metal plate 302 are joined together using a brazing material or the like.

金屬板301、302藉由以鋁為主成分之金屬材料被形成之情況，使用Al‐Si、Al‐Ge、Al‐Cu、Al‐Mg或Al‐Mn等之接合材，接合金屬板301、302和陶瓷母材201。再者，金屬板301、302藉由以銅為主成分之金屬材料被形成之情況，使用Ag‐Cu‐Ti或Ag‐Ti等之接合材，藉由活性金屬硬焊接合金屬板301、302和陶瓷母材201。再者，金屬板301、302和陶瓷母材201之接合，除硬焊以外即使藉由被稱為TLP接合法(Transient Liquid Phase Bonding)之暫態液相接合法進行接合亦可。When the metal plates 301 and 302 are formed of a metal material mainly composed of aluminum, a bonding material such as Al-Si, Al-Ge, Al-Cu, Al-Mg, or Al-Mn is used to join the metal plates 301 and 302 together. 302 and the ceramic base material 201. Furthermore, when the metal plates 301 and 302 are formed of a metal material mainly composed of copper, the metal plates 301 and 302 are brazed by active metal using a bonding material such as Ag-Cu-Ti or Ag-Ti. and ceramic base material 201. In addition, the bonding of the metal plates 301 and 302 and the ceramic base material 201 may be performed by a transient liquid phase bonding method called TLP bonding (Transient Liquid Phase Bonding) in addition to brazing.

接著，對接合金屬板301、302之陶瓷母材201施予蝕刻處理，如圖3C及圖4C所示般，在陶瓷母材201之一方之面，對跨越配設在各第1陶瓷層形成區域203、203之第1配線層11A進行圖案製作，並且在陶瓷母材201之另一方之面，對與各第1陶瓷層形成區域203、203獨立之第1熱傳達金屬層32A、32A進行圖案製作。切割線202形成在第1熱傳達金屬層32A、32A之除接合預定區域之外的非接合部。因此，藉由除去重疊在切割線202上而被形成的金屬層部分(金屬板)，可以使切割線202之全體露出。依此，形成被圖案製作之第1配線層11A及第1熱傳達金屬層32A、32A和陶瓷母材201之疊層體204。Next, etching is performed on the ceramic base material 201 to which the metal plates 301 and 302 are joined, and as shown in FIG. 3C and FIG. 4C , on one surface of the ceramic base material 201 , a pair of ceramic base materials 201 are formed across the first ceramic layers. The first wiring layers 11A of the regions 203 and 203 are patterned, and the first heat transfer metal layers 32A and 32A independent of the respective first ceramic layer forming regions 203 and 203 are formed on the other surface of the ceramic base material 201 . Pattern making. The dicing lines 202 are formed in the non-joining portions of the first heat transfer metal layers 32A and 32A except for the areas to be joined. Therefore, the entirety of the dicing line 202 can be exposed by removing the portion of the metal layer (metal plate) formed overlapping the dicing line 202 . In this manner, a laminate 204 of the patterned first wiring layer 11A, the first heat transfer metal layers 32A and 32A, and the ceramic base material 201 is formed.

另外，第1配線層11A藉由事先將被圖案製作之金屬板接合於陶瓷母材201之一方之面，亦可以不施予蝕刻處理而形成。同樣，第1熱傳達金屬層32A、32A也藉由事先將被圖案製作之個片之金屬板接合於陶瓷母材201之另一方之面，亦可以不施予蝕刻處理而形成。In addition, the first wiring layer 11A may be formed by bonding a patterned metal plate to one surface of the ceramic base material 201 in advance, and may not be subjected to etching treatment. Similarly, the first heat transfer metal layers 32A and 32A can also be formed by bonding a patterned sheet metal plate to the other surface of the ceramic base material 201 in advance, and may not be subjected to etching treatment.

再者，第1配線層11A亦可以藉由銀(Ag)之燒結體構成。在以銀之燒結體構成第1配線層11A之情況，在陶瓷母材201之一方之面，塗佈包含銀及玻璃之添加有玻璃的銀膏而進行加熱處理，依此燒結銀膏而可以形成。因此，不施予蝕刻處理而可以形成被圖案製作之第1配線層11A。另外，以銀的燒結體構成第1配線層11A之情況，以氧化鋁(Al2 O3 )構成陶瓷母材201之至少與銀膏之界面相接的面為佳。此時，例如，即使以氧化鋁構成陶瓷母材201之全體亦可，即使使用使氮化鋁氧化而表面成為氧化鋁之陶瓷基板亦可。In addition, 11 A of 1st wiring layers may be comprised with the sintered compact of silver (Ag). In the case where the first wiring layer 11A is formed of a sintered body of silver, one surface of the ceramic base material 201 is coated with a glass-added silver paste containing silver and glass and subjected to heat treatment, and the silver paste is sintered in this way. form. Therefore, the patterned 1st wiring layer 11A can be formed without performing an etching process. When the first wiring layer 11A is formed of a sintered body of silver, it is preferable that at least the surface of the ceramic base material 201 in contact with the interface of the silver paste is formed of alumina (Al 2 O 3 ). In this case, for example, the entirety of the ceramic base material 201 may be formed of alumina, or a ceramic substrate whose surface is made of alumina by oxidizing aluminum nitride may be used.

(分割工程) 　　於金屬層形成工程S12之後，藉由以在形成有切割線202之面側成為凸之方式，彎曲陶瓷母材201，沿著切割線202分割疊層體204之陶瓷母材201，使第1陶瓷層21A、21A個片化。而且，如圖3D及圖4D所示般，形成接合第1配線層11A和第1陶瓷層21A、21A和第1熱傳達金屬層32A、32A之第1配線基板2A(分割工程S13)。(Division process) After the metal layer forming process S12, the ceramic base material 201 of the laminated body 204 is divided along the cut line 202 by bending the ceramic base material 201 so that the surface side where the cut line 202 is formed is convex. , the first ceramic layers 21A and 21A are individualized into pieces. Then, as shown in FIGS. 3D and 4D , a first wiring board 2A that joins the first wiring layer 11A, the first ceramic layers 21A, 21A, and the first heat transfer metal layers 32A, 32A is formed (division process S13).

因切割線202被形成在第1配線層11A之接合面之相反側(相反面)，故可以沿著切割線202容易分割陶瓷母材201。再者，因切割線202係以貫通陶瓷母材201之相向的邊彼此的單純直線所成，故可以沿著切割線202圓滑地分割陶瓷母材201。Since the dicing line 202 is formed on the opposite side (opposite surface) of the bonding surface of the first wiring layer 11A, the ceramic base material 201 can be easily divided along the dicing line 202 . Furthermore, since the cutting line 202 is formed by a simple straight line penetrating the opposing sides of the ceramic base material 201 , the ceramic base material 201 can be smoothly divided along the cutting line 202 .

(接合工程) 　　在第1配線基板2A之第1配線層11A接合P型熱電轉換元件3之一方之端面，和N型熱電轉換元件4之一方之端面(接合工程S14)。具體而言，第1配線層11A和P型熱電轉換元件3及N型熱電轉換元件4之接合，藉由使用糊膏或硬焊材之接合，根據施加荷重的固相擴散接合等進行接合。(Joining Process) One end face of the P-type thermoelectric conversion element 3 and one end face of the N-type thermoelectric conversion element 4 are joined to the first wiring layer 11A of the first wiring board 2A (bonding process S14). Specifically, the first wiring layer 11A is bonded to the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 by bonding using paste or brazing material, solid-phase diffusion bonding by applying a load, or the like.

在接合工程S14中，因第1配線層11A和P型熱電轉換元件3及N型熱電轉換元件4之接合時，負荷適當的負荷適當的荷重，故如圖5所示般，在被相向配置之一組加壓板401A、401B之間，配置分別重疊第1配線基板2A之第1配線層11A和P型熱電轉換元件3及N型熱電轉換元件4的挾持體405，在其疊層方向加壓挾持體405之狀態進行加熱。依此，分別接合第1配線層11A和P型熱電轉換元件3及N型熱電轉換元件4。在此情況下，各加壓板401A、401B藉由碳板構成。In the bonding process S14, since the first wiring layer 11A is bonded to the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4, an appropriate load is applied, so as shown in FIG. Between a set of pressing plates 401A and 401B, a holding body 405 which overlaps the first wiring layer 11A of the first wiring board 2A, the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4, respectively, is arranged in the lamination direction. The state of the pressing and clamping body 405 is heated. In this way, the first wiring layer 11A, the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are bonded, respectively. In this case, each of the pressure plates 401A and 401B is constituted by a carbon plate.

在該第1配線層11A和P型熱電轉換元件3及N型熱電轉換元件4之接合時，在P型熱電轉換元件3和N型熱電轉換元件4之中至少線膨脹係數小之一方之熱電轉換元件，和加壓板401A、401B之間配置補足構件411，補足起因於P型熱電轉換元件3和N型熱電轉換元件4之線膨脹差的熱伸縮差。具體而言，在矽化錳(線膨脹係數10.8× 10-6 /K程度)之P型熱電轉換元件3和矽化鎂(線膨脹係數17.0×10-6 /K程度)的N型熱電轉換元件4之組合中，P型熱電轉換元件3之線膨脹數較N型熱電轉換元件4之線膨脹係數小。因此，在至少線膨脹係數小的P型熱電轉換元件3和加壓板401A、401B之間配置補足構件411。When the first wiring layer 11A is joined to the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4, among the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4, at least the thermoelectric conversion element whose linear expansion coefficient is smaller Complementary member 411 is disposed between the conversion element and pressure plates 401A and 401B, and compensates for the difference in thermal expansion and contraction caused by the difference in linear expansion between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 . Specifically, the P-type thermoelectric conversion element 3 of manganese silicide (linear expansion coefficient of about 10.8×10 -6 /K) and the N-type thermoelectric conversion element 4 of magnesium silicide (linear expansion coefficient of about 17.0×10 -6 /K) In the combination, the linear expansion coefficient of the P-type thermoelectric conversion element 3 is smaller than the linear expansion coefficient of the N-type thermoelectric conversion element 4 . Therefore, the complementary member 411 is arranged between at least the P-type thermoelectric conversion element 3 having a small linear expansion coefficient and the pressure plates 401A and 401B.

另外，藉由補足構件411事先固定於加壓板401A、401B使一體化，成為容易處理。再者，雖然省略圖示，但是為了防止接合，在補足構件411和P型熱電轉換元件3之金屬化層41或第1熱傳達金屬層32A之間配置石墨薄片。In addition, since the complementary member 411 is fixed to the pressure plates 401A and 401B in advance and integrated, it becomes easy to handle. In addition, although illustration is omitted, in order to prevent bonding, a graphite flake is arranged between the complementary member 411 and the metallization layer 41 of the P-type thermoelectric conversion element 3 or the first heat transfer metal layer 32A.

如圖5所示般，例如，僅在P型熱電轉換元件3側配置補足構件411之情況，補足構件411需要使用線膨脹係數比N型熱電轉換元件4還高的材料。線膨脹係數較N型熱電轉換元件4之線膨脹係數(17.0×10-6 /K程度)高的材料，有例如鋁(23×10-6 /K)。補足構件411使用該材料。As shown in FIG. 5 , for example, when the complementary member 411 is arranged only on the P-type thermoelectric conversion element 3 side, the complementary member 411 needs to use a material having a higher linear expansion coefficient than the N-type thermoelectric conversion element 4 . A material whose linear expansion coefficient is higher than that of the N-type thermoelectric conversion element 4 (about 17.0×10 -6 /K) is, for example, aluminum (23×10 -6 /K). The complementary member 411 uses this material.

而且，使第1配線基板2A和P型熱電轉換源3及N型熱電轉換元件4之接合時的P型熱電轉換元件3及補足構件411之高度和N型熱電轉換元件4之高度之差，較P型熱電轉換元件3之高度和N型熱電轉換元件4之高度之差更小。依此，可以使線膨脹係數大之N型熱電轉換元件4之高度，和線膨脹係數小之P型熱電轉換元件3及補足構件411之高度接近。因此，在一組加壓板401A、401B之間，使各熱電轉換元件3、4和第1配線層11A密接而可以分別均勻地加壓。Then, the difference between the height of the P-type thermoelectric conversion element 3 and the complementary member 411 and the height of the N-type thermoelectric conversion element 4 when the first wiring board 2A, the P-type thermoelectric conversion source 3 and the N-type thermoelectric conversion element 4 are joined, The difference between the height of the P-type thermoelectric conversion element 3 and the height of the N-type thermoelectric conversion element 4 is smaller. Accordingly, the height of the N-type thermoelectric conversion element 4 with a large linear expansion coefficient can be made close to the height of the P-type thermoelectric conversion element 3 and the complementary member 411 with a small linear expansion coefficient. Therefore, the thermoelectric conversion elements 3 and 4 and the first wiring layer 11A can be brought into close contact with each other between the set of pressure plates 401A and 401B, so that the pressure can be uniformly applied to each.

另外，在圖5所示之例中，雖然在下側之加壓板401A和挾持體405之間配置補足構件411，並且在上側之加壓板401B和挾持體405之間配置補足構件411，但是即使在任一方之間配置補足構件411亦可。In addition, in the example shown in FIG. 5, although the supplementary member 411 is arranged between the lower pressure plate 401A and the clamping body 405, and the supplementary member 411 is arranged between the upper pressure plate 401B and the clamping body 405, but The complementary member 411 may be arranged between either of them.

另外，在接合工程S14中，如圖6所示般，亦可以在P型熱電轉換元件3側和N型熱電轉換元件4側之雙方配置補足構件412、413而進行。在例如線膨脹係數小的P型熱電轉換元件3側，配置成為由線膨脹係數大的材料所構成之補足構件412，在線膨脹係數大的N型熱電轉換元件4側，配置線膨脹係數較補足構件412小的材料所構成之補足構件413。另外，雖然省略圖示，但是為了防止接合，在各補足構件412、413和兩熱電轉換元件3、4之金屬化層41之間，配置石墨薄片。In addition, in the bonding process S14, as shown in FIG. 6, the complementary members 412 and 413 may be arranged on both the P-type thermoelectric conversion element 3 side and the N-type thermoelectric conversion element 4 side. For example, on the side of the P-type thermoelectric conversion element 3 with a small linear expansion coefficient, a complementary member 412 made of a material with a large linear expansion coefficient is arranged, and on the side of the N-type thermoelectric conversion element 4 with a large linear expansion coefficient, a linear expansion coefficient of a relatively complementary member 412 is arranged. Complementary member 413 made of material with smaller member 412. In addition, although illustration is omitted, in order to prevent bonding, graphite flakes are arranged between the complementary members 412 and 413 and the metallization layers 41 of the two thermoelectric conversion elements 3 and 4 .

例如，作為配置在P型熱電轉換元件3側之補足構件412之材料，可以使用鋁(23×10-6 /K)或銅(17×10-6 /K)。例如，作為配置在N型熱電轉換元件4側之補足構件413之材料，可以使用鐵(12×10-6 /K)或鎳(13×10-6 /K)。For example, aluminum (23×10 −6 /K) or copper (17×10 −6 /K) can be used as the material of the complementary member 412 arranged on the P-type thermoelectric conversion element 3 side. For example, iron (12×10 −6 /K) or nickel (13×10 −6 /K) can be used as the material of the complementary member 413 arranged on the N-type thermoelectric conversion element 4 side.

依此，在第1配線基板2A和P型熱電轉換元件3及N型熱電轉換元件4之接合時，可以使P型熱電轉換元件3及補足構件412之高度和N型熱電轉換元件4及補足構件413之高度之差，較P型熱電轉換元件3之高度和N型熱電轉換元件4之高度之差更小，可以使P型熱電轉換元件3及補足構件412之高度和N型熱電轉換元件4及補足構件413之高度一致。因此，在一組加壓板401A、401B之間，使各熱電轉換元件3、4和第1配線層11A密接而可以分別均勻地加壓。In this way, when the first wiring board 2A, the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are joined, the heights of the P-type thermoelectric conversion element 3 and the complementary member 412 can be adjusted to the height of the N-type thermoelectric conversion element 4 and the complementary member 412 . The difference between the heights of the members 413 is smaller than the difference between the heights of the P-type thermoelectric conversion elements 3 and the heights of the N-type thermoelectric conversion elements 4, so that the heights of the P-type thermoelectric conversion elements 3 and the complementary members 412 and the heights of the N-type thermoelectric conversion elements can be made smaller. 4 and the height of the supplementary member 413 are the same. Therefore, the thermoelectric conversion elements 3 and 4 and the first wiring layer 11A can be brought into close contact with each other between the set of pressure plates 401A and 401B, so that the pressure can be uniformly applied to each.

另外，在上述中，在線膨脹係數小的P型熱電轉換元件3側，配置由線膨脹係數大的材料所構成之補足構件412，在線膨脹係數大的N型熱電轉換元件4側配置由線膨脹係數較補足構件412小的材料所構成之補足構件413，但是即使在P型熱電轉換元件3側配置由線膨脹係數小的材料所構成之補足構件，在N型熱電轉換元件4側配置由線膨脹係數大的材料所構成的補足構件亦可。此時，因使第1配線基板2A和P型熱電轉換元件3及N型熱電轉換元件4之接合(加熱)時的P型熱電轉換元件3側之高度和N型熱電轉換元件4側之高度一致，故若調整各補足構件之厚度即可。In addition, in the above, on the side of the P-type thermoelectric conversion element 3 having a small linear expansion coefficient, the complementary member 412 made of a material with a large linear expansion coefficient is arranged, and the N-type thermoelectric conversion element 4 having a large linear expansion coefficient is arranged on the side of the N-type thermoelectric conversion element 4 with a large linear expansion coefficient. Complementary member 413 made of a material with a smaller coefficient than that of complementary member 412, but even if a complementary member made of a material with a smaller coefficient of linear expansion is arranged on the P-type thermoelectric conversion element 3 side, a wire is arranged on the N-type thermoelectric conversion element 4 side. A complementary member made of a material with a large expansion coefficient may also be used. At this time, the height on the side of the P-type thermoelectric conversion element 3 and the height on the side of the N-type thermoelectric conversion element 4 when the first wiring board 2A, the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are joined (heated) The thickness of each supplementary member can be adjusted.

另外，因第1配線基板2A具有被個片化之複數第1陶瓷層21A、21A，故在接合工程S14中，挾持體405被加熱之時，各第1陶瓷層21A、21A不互相拘束對方側。因此，可以追隨於被疊層於第1配線基板2A之各部位的P型熱電轉換元件3和N型熱電轉換元件4之熱膨脹而移動。依此，可以製造出隔著第1配線基板2A而串聯連接P型熱電轉換元件3和N型熱電轉換元件4之熱電轉換模組101。In addition, since the first wiring board 2A has the plurality of first ceramic layers 21A, 21A that are individually sliced, the first ceramic layers 21A, 21A do not bind each other when the clamping body 405 is heated in the bonding process S14. side. Therefore, it is possible to follow the thermal expansion of the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 stacked on each part of the first wiring board 2A. In this way, the thermoelectric conversion module 101 in which the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are connected in series with the first wiring board 2A interposed therebetween can be manufactured.

如此被製造的熱電轉換模組101在例如圖1之下側，配置外部之熱源(省略圖示)或冷卻流路(省略圖示)等。依此，在各熱電轉換元件3、4產生因應上下之溫度差的電動勢，在配列之兩端的配線91、91之間，取得產生在各熱電轉換元件3、4之電動勢之總和的電位差。The thermoelectric conversion module 101 manufactured in this way is provided with, for example, an external heat source (not shown), a cooling flow path (not shown), and the like on the lower side of FIG. 1 . In this way, an electromotive force corresponding to the temperature difference between the upper and lower sides is generated in each of the thermoelectric conversion elements 3 and 4, and a potential difference of the sum of the electromotive forces generated in each of the thermoelectric conversion elements 3 and 4 is obtained between the wirings 91 and 91 at both ends of the arrangement.

再者，在如此之使用環境下，在熱電轉換模組101之兩熱電轉換元件3、4之熱膨脹產生差。但是，在熱電轉換模組101中，構成第1配線基板2A之各第1陶瓷層21A、21A在相鄰的P型熱電轉換元件3和N型熱電轉換元件4之間分離，獨立形成在每個熱電轉換元件3、4，剛體之第1陶瓷層21A、21A中之P型熱電轉換元件3和N型熱電轉換元件4之間的連接被分斷。因此，各熱電轉換元件3、4藉由各第1陶瓷層21A、21A，無隨著熱伸縮的變形被拘束之情形。Furthermore, in such a use environment, a difference in thermal expansion occurs between the two thermoelectric conversion elements 3 and 4 of the thermoelectric conversion module 101 . However, in the thermoelectric conversion module 101, the respective first ceramic layers 21A and 21A constituting the first wiring board 2A are separated between the adjacent P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4, and are independently formed on each of the first ceramic layers 21A and 21A. For the thermoelectric conversion elements 3 and 4, the connection between the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4 in the first ceramic layers 21A and 21A of the rigid body is broken. Therefore, the thermoelectric conversion elements 3 and 4 are not restrained from deformation due to thermal expansion and contraction by the first ceramic layers 21A and 21A.

再者，相鄰的P型熱電轉換元件3和N型熱電轉換元件4之熱伸縮差，可以使連接兩熱電轉換元件3、4之間的第1配線層11A之連接部分變形而吸收尺寸變化。因此，可以抑制藉由熱伸縮差而產生在各熱電轉換元件3、4內之熱應力的發生。而且，可以防止藉由各熱電轉換元件3、4之熱伸縮差，熱電轉換元件3、4從第1配線基板2A(第1配線層11A)被剝離，或在熱電轉換元件3、4產生裂紋之情形。因此，可以良好地維持藉由第1配線層11A被連接之熱電轉換元件3、4間之電性連接，且可以良好地維持熱電轉換模組101之接合可靠性、熱傳導性及導電性。Furthermore, the difference in thermal expansion and contraction between the adjacent P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 can deform the connection portion of the first wiring layer 11A connecting the two thermoelectric conversion elements 3 and 4 to absorb dimensional changes. . Therefore, the occurrence of thermal stress in each of the thermoelectric conversion elements 3 and 4 due to the difference in thermal expansion and contraction can be suppressed. Furthermore, it is possible to prevent the thermoelectric conversion elements 3 and 4 from being peeled off from the first wiring board 2A (first wiring layer 11A) due to the difference in thermal expansion and contraction of the thermoelectric conversion elements 3 and 4 , or to prevent cracks from occurring in the thermoelectric conversion elements 3 and 4 . situation. Therefore, the electrical connection between the thermoelectric conversion elements 3 and 4 connected by the first wiring layer 11A can be well maintained, and the bonding reliability, thermal conductivity, and electrical conductivity of the thermoelectric conversion module 101 can be well maintained.

再者，在第1配線基板2A設置有絕緣基板亦即第1陶瓷層21A、21A。因此，於在熱源等設置熱電轉換模組101之時，可以藉由第1陶瓷層21A、21A，防止熱源等和第1配線層11A接觸之情形。因此，可以確實地迴避熱源等和第1配線層11A之電性洩漏，且可以良好地維持絕緣狀態。In addition, 1st ceramic layers 21A and 21A which are an insulating board|substrate are provided in 2A of 1st wiring board|substrates. Therefore, when the thermoelectric conversion module 101 is installed in the heat source or the like, the first ceramic layers 21A and 21A can prevent the heat source and the like from contacting the first wiring layer 11A. Therefore, the electrical leakage of the heat source etc. and the 1st wiring layer 11A can be avoided reliably, and an insulating state can be maintained favorably.

另外，由於熱電轉換元件3、4本身電壓低，故若絕緣基板亦即第1陶瓷層21A、21A獨立形成在每個熱電轉換元件3、4時，即是在第1配線層11A之全面不接合第1陶瓷層21A、21A，只要第1配線層11A不與熱源等物理性接觸，就不會產生電性洩漏。In addition, since the thermoelectric conversion elements 3 and 4 themselves have low voltages, if the insulating substrates, that is, the first ceramic layers 21A and 21A are independently formed in each of the thermoelectric conversion elements 3 and 4, the entire surface of the first wiring layer 11A is not covered. When the first ceramic layers 21A and 21A are joined, as long as the first wiring layer 11A is not in physical contact with a heat source or the like, electrical leakage does not occur.

再者，因在第1配線基板2A，設置有第1熱傳達金屬層32A、32A，故當在熱源等設置熱電轉換模組101之時，藉由第1熱傳達金屬層32A、32A，可以提高熱源等和熱電轉換模組101之密接性，可以提升熱傳達性。因此，可以提升熱電轉換模組101之熱電交換性能(發電效率)。Furthermore, since the first heat transfer metal layers 32A and 32A are provided on the first wiring board 2A, when the thermoelectric conversion module 101 is installed on a heat source or the like, the first heat transfer metal layers 32A and 32A can Improving the adhesion between the heat source, etc. and the thermoelectric conversion module 101 can improve heat transfer. Therefore, the thermoelectric exchange performance (power generation efficiency) of the thermoelectric conversion module 101 can be improved.

另外，在第1實施型態之接合工程S14中，如圖5及圖6所示般，藉由使用補足構件411～413，至少在線膨脹係數小之一方的熱電轉換元件(P型熱電轉換元件3)，和加壓板401A、401B之間，配置補足構件411～413，補足起因於P型熱電轉換元件3和N型熱電轉換元件4之線膨脹差的熱伸縮差。而且，雖然在一組加壓板401A、401B之間，使各熱電轉換元件3、4和第1配線層11A密接而均勻地加壓，但是接合工程並不限定於此。In addition, in the bonding process S14 of the first embodiment, as shown in FIGS. 5 and 6 , by using the complementary members 411 to 413 , at least a thermoelectric conversion element (P-type thermoelectric conversion element) having a smaller coefficient of linear expansion can be obtained. 3) Complementary members 411 to 413 are arranged between the pressure plates 401A and 401B to supplement the difference in thermal expansion and contraction caused by the difference in linear expansion between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 . Furthermore, the thermoelectric conversion elements 3 and 4 and the first wiring layer 11A are brought into close contact with each other between the set of pressing plates 401A and 401B to be uniformly pressed, but the bonding process is not limited to this.

例如，如圖7所示般，在疊層方向重疊偶數個(在圖7中為2個)挾持體405，並且在疊層方向配同數量的P型熱電轉換元件3和N型熱電轉換元件4，在第1配線層11A和P型熱電轉換元件3及N型熱電轉換元件4之接合時，使各熱電轉換元件3、4和第1配線層11A密接而可以分別均勻地加壓。再者，藉由在各挾持體405、405之間配設具有緩衝性之石墨薄片420，可以在第1配線基板2A之面方向之各熱電轉換元件3、4之配置處，補正各個傾斜，可以更均勻地加壓各熱電轉換元件3、4和第1配線基板2A。For example, as shown in FIG. 7 , an even number (two in FIG. 7 ) of clamping bodies 405 are overlapped in the lamination direction, and the number of P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements are matched in the lamination direction. 4. When the first wiring layer 11A is joined to the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4, the thermoelectric conversion elements 3 and 4 and the first wiring layer 11A are brought into close contact so as to be pressurized uniformly. Furthermore, by arranging the graphite sheet 420 having buffering properties between the holding bodies 405 and 405, it is possible to correct the respective inclinations in the arrangement of the thermoelectric conversion elements 3 and 4 in the surface direction of the first wiring board 2A. The thermoelectric conversion elements 3 and 4 and the first wiring board 2A can be pressurized more uniformly.

在此情況下，藉由使在疊層方向鄰接之兩個挾持體405、405之各第1配線基板2A、2A彼此相向配置，可以在第1配線基板2A之面方向之各熱電轉換元件3、4之配置處，分別於疊層方向各配置一個(同數量)P型熱電轉換元件3和N型熱電轉換元件4。藉由如此在疊層方向重疊且配置偶數個挾持體405、405，可以總是重疊且配置同數量P型熱電轉換元件3和N型熱電轉換元件4之中，線膨脹係數小的一方之熱電轉換元件，和線膨脹係數大的另一方之熱電轉換元件，在接合(加熱)時，可以使重疊複數個之挾持體405、405之高度在面方向成為均勻。再者，如上述般，藉由使具有緩衝性之石墨薄片402介於各挾持體405、405之間，可以補正各個傾斜，可以更均勻地加壓各熱電轉換元件3、4和第1配線基板2A。In this case, by arranging the first wiring boards 2A, 2A of the two holding bodies 405, 405 adjacent in the lamination direction to face each other, the thermoelectric conversion elements 3 in the surface direction of the first wiring board 2A can be arranged , 4, one (same number) P-type thermoelectric conversion element 3 and N-type thermoelectric conversion element 4 are respectively arranged in the lamination direction. By arranging even-numbered clamp bodies 405 and 405 in such a way that they overlap in the stacking direction, it is possible to always overlap and arrange the thermoelectric element with the smaller coefficient of linear expansion among the P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 of the same number. When the conversion element and the thermoelectric conversion element with the larger linear expansion coefficient are joined (heated), the heights of the overlapping clamping bodies 405 and 405 can be made uniform in the plane direction. Furthermore, as described above, by interposing the graphite sheet 402 having buffering properties between the holding bodies 405 and 405, each inclination can be corrected, and the thermoelectric conversion elements 3 and 4 and the first wiring can be pressurized more uniformly. Substrate 2A.

因此，在一組加壓板401A、01B之間，可以使各熱電轉換元件3、4 和第1配線層11A密接而均勻地加壓，可以確實地接合各熱電轉換元件3、4和第1配線基板2A。再者，藉由如此地疊層複數挾持體405，可以在一次的接合工程S14中，製造複數熱電轉換模組101。Therefore, the thermoelectric conversion elements 3 and 4 and the first wiring layer 11A can be brought into close contact between the set of pressing plates 401A and 01B to be pressurized uniformly, and the thermoelectric conversion elements 3 and 4 and the first wiring layer 11A can be surely joined. Wiring board 2A. Furthermore, by stacking the plurality of clamping bodies 405 in this way, the plurality of thermoelectric conversion modules 101 can be manufactured in one bonding process S14.

再者，在圖1所示之第1實施型態中，雖然設成具有被配設在熱電轉換元件3、4之一端側的第1配線基板2A之構成，但是亦可以如圖8所示之第2實施型態之熱電轉換模組102般，在熱電轉換元件3、4之一端側(在圖8中為下側)配設第1配線基板2A，在另一端側(在圖8中為上側)配設第2配線基板2B。在此情況下，可以經由被相向配置之第1配線基板2A和第2配線基板2B，電性串聯連接P型熱電轉換元件3和N型熱電轉換元件4。Furthermore, in the first embodiment shown in FIG. 1 , although the configuration has the first wiring board 2A arranged on one end side of the thermoelectric conversion elements 3 and 4, it may be shown in FIG. 8 . In the thermoelectric conversion module 102 of the second embodiment, the first wiring board 2A is disposed on one end side (lower side in FIG. 8 ) of the thermoelectric conversion elements 3 and 4, and the other end side (in FIG. 8 ) is provided with a first wiring board 2A. The second wiring board 2B is arranged on the upper side). In this case, the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 can be electrically connected in series via the first wiring substrate 2A and the second wiring substrate 2B arranged to face each other.

以下，在第2實施型態之熱電轉換模組102中，針對與第1實施型態之熱電轉換模組101共同的要素，賦予相同符號省略說明。被配設在熱電轉換元件3、4之一端側(在圖8中為下側)的第1配線基板2A與第1實施型態相同，省略說明。Hereinafter, in the thermoelectric conversion module 102 of the second embodiment, the same elements as those of the thermoelectric conversion module 101 of the first embodiment are assigned the same reference numerals, and the description thereof will be omitted. The first wiring board 2A arranged on one end side (lower side in FIG. 8 ) of the thermoelectric conversion elements 3 and 4 is the same as that of the first embodiment, and the description thereof is omitted.

被配設在熱電轉換元件3、4之另一端側(在圖8中為上側)之第2配線基板2B之構成，被設成具有第2配線層12B、12B，和被接合於與第2配線層12B、12B之熱電轉換元件3、4之接合面相反之面的第2陶瓷層21B、21B，和被接合於與第2陶瓷層21B、21B之第2配線層12B、12B之接合面相反之面的第2熱傳達金屬層31B。The configuration of the second wiring board 2B arranged on the other end side (upper side in FIG. 8 ) of the thermoelectric conversion elements 3 and 4 includes the second wiring layers 12B and 12B, and is bonded to the second wiring layer 12B and 12B. The second ceramic layers 21B, 21B on the surfaces opposite to the bonding surfaces of the thermoelectric conversion elements 3, 4 of the wiring layers 12B, 12B, and the bonding surfaces of the second wiring layers 12B, 12B bonded to the second ceramic layers 21B, 21B The second heat transfer metal layer 31B on the opposite side.

構成第2配線基板2B之第2陶瓷層21B、21B被分離成複數(在圖8中為2個)，與第1實施型態相同，被獨立形成在每個各熱電轉換元件3、4。再者，各第2陶瓷層21B、21B分別被形成俯視正方向形狀。在第2配線基板2B設置有2個俯視正方形狀之第2配線層12B、12B，並且設置有1個俯視長方形狀之第2熱傳達金屬層31B。第2配線層12B、12B被獨立形成在每個第2陶瓷層21B、21B，個別地被連接於各熱電轉換元件3、4。另外，第2熱傳達金屬層31B跨越相鄰的兩第2配線層12B、12B之間而被形成，並且，跨越相鄰的兩第2陶瓷層21B、21B之間而被形成。 The second ceramic layers 21B and 21B constituting the second wiring board 2B are separated into plural numbers (two in FIG. 8 ), and are independently formed for each of the thermoelectric conversion elements 3 and 4 as in the first embodiment. In addition, each of the second ceramic layers 21B and 21B is formed into a shape in the normal direction in plan view, respectively. On the second wiring board 2B, two second wiring layers 12B and 12B having a square shape in plan view are provided, and one second heat transfer metal layer 31B having a rectangular shape in plan view is provided. The second wiring layers 12B and 12B are independently formed on the second ceramic layers 21B and 21B, and are individually connected to the thermoelectric conversion elements 3 and 4 . In addition, the second heat transfer metal layer 31B is formed so as to span between the two adjacent second wiring layers 12B and 12B, and is also formed so as to span between the two adjacent second ceramic layers 21B and 21B.

在第2實施型態之熱電轉換模組102中，藉由相同之金屬材料，將第1配線基板2A之第1配線層11A和第2配線基板2B之第2熱傳達金屬層31B形成同形狀(相同厚度，相同平面尺寸)，並且藉由相同之金屬材料，將第1配線基板2A之第1熱傳達金屬層32A、32A和第2配線基板2B之第2配線層12B、12B形成同形狀。而且，第1配線基板2A和第2配線基板2B之構成被設成具有2個陶瓷層(第1陶瓷層21A、21A或第2陶瓷層21B、21B)，和被接合於兩陶瓷層之一方之面的俯視長方形狀之金屬層(第1配線層11A或第2熱傳達金屬層31B)，和被接合於兩陶瓷層之另一方之面，且被獨立形成在各陶瓷層之俯視正方形狀之金屬層(第1熱傳達金屬層32A、32A或第2配線層12B、12B)。即是，兩配線基板2A、2B藉由相同構成之1種類之配線基板而構成。 In the thermoelectric conversion module 102 of the second embodiment, the first wiring layer 11A of the first wiring board 2A and the second heat transfer metal layer 31B of the second wiring board 2B are formed in the same shape using the same metal material. (same thickness, same plane size), and the first heat transfer metal layers 32A, 32A of the first wiring board 2A and the second wiring layers 12B, 12B of the second wiring board 2B are formed into the same shape by the same metal material . Furthermore, the first wiring board 2A and the second wiring board 2B are configured to have two ceramic layers (the first ceramic layers 21A, 21A or the second ceramic layers 21B, 21B), and the two ceramic layers are bonded to one of the two ceramic layers. A metal layer (the first wiring layer 11A or the second heat transfer metal layer 31B) having a rectangular shape in plan view on one surface, and is joined to the other surface of the two ceramic layers and is independently formed on the plan view square shape of each ceramic layer. the metal layers (the first heat transfer metal layers 32A, 32A or the second wiring layers 12B, 12B). That is, both wiring boards 2A and 2B are formed by one type of wiring boards having the same structure.

而且，藉由在如此被構成之一組配線基板2A、2B之間，交互串聯連接P型熱電轉換元件3和N型熱電轉換元件4，構成熱電轉換模組102。因此，針對熱電轉換模組102之製造方法，省略說明。 Then, the thermoelectric conversion module 102 is constituted by alternately connecting the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4 in series between the set of wiring boards 2A and 2B thus constituted. Therefore, the description of the manufacturing method of the thermoelectric conversion module 102 is omitted.

即使在如此被製造的第2實施型態之熱電轉換模組102中，構成各配線基板2A、2B之各陶瓷層21A、21B被獨立形成在每個熱電轉換元件3、4，剛體之陶瓷層 21A、21B中之P型熱電轉換元件3和N型熱電轉換元件4之間之連接被分斷。因此，各熱電轉換元件3、4藉由各陶瓷層21A、21B，無隨著熱伸縮的變形被拘束之情形。 In the thermoelectric conversion module 102 of the second embodiment thus produced, the ceramic layers 21A and 21B constituting the wiring boards 2A and 2B are independently formed on the thermoelectric conversion elements 3 and 4, respectively, and the ceramic layers of the rigid body are formed independently. The connection between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 in 21A, 21B is disconnected. Therefore, the thermoelectric conversion elements 3 and 4 are not restrained from deformation due to thermal expansion and contraction by the ceramic layers 21A and 21B.

再者，僅第1配線基板2A之各第1陶瓷層21A、21A之間藉由第1配線層11A被連結，第2配線基板2B之各第2陶瓷層21B、21B之間藉由第2熱傳達金屬層31B被連結。依此，相鄰的P型熱電轉換元件3和N型熱電轉換元件4之熱伸縮差，可以使連接熱電轉換元件3、4之間的第1配線層11A或第2熱傳達金屬層31B之連接部分變形而吸收尺寸變化。因此，藉由可以抑制熱伸縮差而產生在各熱電轉換元件3、4內之熱應力的發生。而且，可以防止藉由各熱電轉換元件3、4之熱伸縮差，熱電轉換元件3、4從兩配線基板2A、2B(第1配線層11A或第2配線層12B、12B)被剝離，或在熱電轉換元件3、4產生裂紋之情形。因此，可以良好地維持藉由第1配線層11A和第2配線層12B、12B被連接之熱電轉換元件3、4間之電性連接，且可以良好地維持熱電轉換模組102之接合可靠性、熱傳導性及導電性。 Furthermore, only the first ceramic layers 21A, 21A of the first wiring board 2A are connected by the first wiring layer 11A, and the second ceramic layers 21B, 21B of the second wiring board 2B are connected by the second wiring layer 11A. The heat transfer metal layer 31B is connected. In this way, the difference in thermal expansion and contraction between the adjacent P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 can make the first wiring layer 11A or the second heat transfer metal layer 31B connecting between the thermoelectric conversion elements 3 and 4 . The connecting portion deforms to absorb dimensional changes. Therefore, the occurrence of thermal stress in each of the thermoelectric conversion elements 3 and 4 can be suppressed by the difference in thermal expansion and contraction. Furthermore, the thermoelectric conversion elements 3 and 4 can be prevented from being peeled off from the two wiring boards 2A and 2B (the first wiring layer 11A or the second wiring layers 12B and 12B) due to the difference in thermal expansion and contraction of the thermoelectric conversion elements 3 and 4, or In the case where cracks are generated in the thermoelectric conversion elements 3 and 4 . Therefore, the electrical connection between the thermoelectric conversion elements 3 and 4 connected by the first wiring layer 11A and the second wiring layers 12B and 12B can be well maintained, and the bonding reliability of the thermoelectric conversion module 102 can be well maintained. , thermal conductivity and electrical conductivity.

再者，因在各配線基板2A、2B，分別設置有絕緣基板亦即陶瓷層21A、21B，故當在熱源等設置熱電轉換模組102之時，可以藉由陶瓷層21A、21B防止熱源等和第1配線層11A或第2配線層12B、12B接觸之情形。因此，可以確實地迴避熱源等和第1配線層11A或第2配線層12B、12B之電性洩漏，且可以良好地維持絕緣狀態。 Furthermore, since the ceramic layers 21A and 21B, which are insulating substrates, are respectively provided on the wiring boards 2A and 2B, when the thermoelectric conversion module 102 is provided on the heat source or the like, the ceramic layers 21A and 21B can prevent the heat source and the like. When it is in contact with the first wiring layer 11A or the second wiring layers 12B and 12B. Therefore, the electrical leakage between the heat source and the like and the first wiring layer 11A or the second wiring layers 12B and 12B can be reliably avoided, and the insulating state can be well maintained.

再者，在配線基板2A、2B，設置有第1熱傳達金屬層32A或第2熱傳達金屬31B。因此，當在熱源等配置熱電轉換模組102之時，藉由各熱傳達金屬層32A、31B，可以提高熱源等和熱電轉換模組102之密接性，可以提升熱傳導性。因此，可以提升熱電轉換模組102之熱電交換性能(發電效率)。Furthermore, the wiring boards 2A and 2B are provided with the first heat transfer metal layer 32A or the second heat transfer metal 31B. Therefore, when the thermoelectric conversion module 102 is arranged on the heat source or the like, the heat transfer metal layers 32A and 31B can improve the adhesion between the heat source and the thermoelectric conversion module 102, thereby improving the thermal conductivity. Therefore, the thermoelectric exchange performance (power generation efficiency) of the thermoelectric conversion module 102 can be improved.

另外，在圖8所示之第2實施型態中，雖然將一組配線基板2A、2B之雙方設成具有被獨立形成在每個熱電轉換元件3、4之陶瓷層21A、21A或21B、21B的構成，但是並不限定於此。藉由僅將至少一方之配線基板設成具有被獨立形成在每個熱電轉換元件3、4之陶瓷層的構成，可以緩和隨著兩熱電轉換元件3、4之熱伸縮差的尺寸變化，可以防止熱伸縮差所致的熱電轉換元件3、4之裂紋或一組配線基板的剝離等的發生。因此，若在每個熱電轉換元件3、4獨立形成一組配線基板2A、2B中，至少其中之任一方之陶瓷層即可，In addition, in the second embodiment shown in FIG. 8, although both of a set of wiring boards 2A, 2B are provided with ceramic layers 21A, 21A or 21B independently formed on each thermoelectric conversion element 3, 4, The configuration of 21B is not limited to this. By setting at least one of the wiring boards to have a ceramic layer independently formed on each of the thermoelectric conversion elements 3 and 4, it is possible to alleviate the dimensional change due to the difference in thermal expansion and contraction between the two thermoelectric conversion elements 3 and 4, and it is possible to The occurrence of cracks in the thermoelectric conversion elements 3 and 4 due to differences in thermal expansion and contraction, peeling of a set of wiring boards, and the like are prevented. Therefore, if each thermoelectric conversion element 3, 4 is independently formed into a set of wiring boards 2A, 2B, at least one of the ceramic layers is sufficient.

圖9～圖13表示本發明之第3實施型態之熱電轉換模組103。在第1實施型態及第2實施型態中，雖然藉由組合各1個P型熱電轉換元件3和N型熱電轉換元件4，構成熱電轉換模組102、102，但是亦可以如第3實施型態之熱電轉換模組103般，組合各複數P型熱電轉換元件3和N型熱電轉換元件4，構成大型熱電轉換模組。9 to 13 show a thermoelectric conversion module 103 according to a third embodiment of the present invention. In the first embodiment and the second embodiment, the thermoelectric conversion modules 102 and 102 are formed by combining one P-type thermoelectric conversion element 3 and one N-type thermoelectric conversion element 4, but the third The thermoelectric conversion module 103 of the embodiment is generally composed of a plurality of P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 to form a large-scale thermoelectric conversion module.

第3實施型態之熱電轉換模組103在被相向配置之第1配線基板5A和第2配線基板5B之一組配線基板5A、5B之間，組合複數P型熱電轉換元件3和N型熱電轉換元件4而面狀(二次元)地配列。而且，分別的P型熱電轉換元件3和N型熱電轉換元件4被設成經由上下配線基板5A、5B被電性串聯連接的構成。以下，在第3實施型態之熱電轉換模組103中，針對與第1實施型態之熱電轉換模組101及第2實施型態之熱電轉換模組102共同的要素，賦予相同符號省略說明。In the thermoelectric conversion module 103 of the third embodiment, a plurality of P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements are combined between the first wiring substrate 5A and the second wiring substrate 5B, which are arranged opposite to one set of wiring substrates 5A and 5B. The conversion elements 4 are arranged in a planar (two-dimensional) form. Further, the respective P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 are configured to be electrically connected in series via the upper and lower wiring boards 5A and 5B. Hereinafter, in the thermoelectric conversion module 103 of the third embodiment, the elements common to the thermoelectric conversion module 101 of the first embodiment and the thermoelectric conversion module 102 of the second embodiment are given the same reference numerals and descriptions thereof are omitted. .

第1配線基板5A之構成係如圖9～圖13所示般，被設成具有複數第1配線層11A、12A，和被接合於與第1配線層11A、12A之熱電轉換元件3、4之接合面相反之面之複數第1陶瓷層21A，和被接合於與第1陶瓷層21A之第1配線層11A、12A之接合面相反之面的第1熱傳達金屬層31A。As shown in FIGS. 9 to 13 , the first wiring board 5A is configured to include a plurality of first wiring layers 11A and 12A, and thermoelectric conversion elements 3 and 4 bonded to the first wiring layers 11A and 12A. The plurality of first ceramic layers 21A on the surface opposite to the bonding surface, and the first heat transfer metal layer 31A bonded to the surface opposite to the bonding surfaces of the first wiring layers 11A and 12A of the first ceramic layer 21A.

再者，第2配線基板5B之構成如圖9、圖12及圖13所示般，被設成第2配線層11B、被接合於與第2配線層11B之熱電轉換元件3、4之接合面相反之面的複數第2陶瓷層21B，和被接合於與第2陶瓷層21B之第2配線層11B之接合面相反之面的第2熱傳達金屬層31B、32B。In addition, as shown in FIGS. 9 , 12 and 13 , the second wiring board 5B has a configuration such that the second wiring layer 11B is provided in the junction of the thermoelectric conversion elements 3 and 4 with the second wiring layer 11B. The plurality of second ceramic layers 21B on the surface opposite to each other, and the second heat transfer metal layers 31B and 32B bonded to the surface opposite to the bonding surface of the second wiring layer 11B of the second ceramic layer 21B.

構成各配線基板5A、5B之陶瓷層21A、21B與第1實施型態相同，被獨立形成在每個各熱電轉換元件3、4。另外，在熱電轉換模組103設置有各7個P型熱電轉換元件3和N型熱電轉換元件4，設置合計14個熱電轉換元件。而且，在各配線基板5A、5B，分別設置有較熱電轉換元件3、4之個數多，各16個陶瓷層21A、21B。The ceramic layers 21A and 21B constituting the respective wiring boards 5A and 5B are independently formed for each of the thermoelectric conversion elements 3 and 4 , as in the first embodiment. In addition, the thermoelectric conversion module 103 is provided with seven P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 each, and a total of 14 thermoelectric conversion elements are provided. Further, each of the wiring boards 5A and 5B is provided with 16 ceramic layers 21A and 21B, which are larger than the number of the thermoelectric conversion elements 3 and 4 , respectively.

再者，第1配線基板5A之各第1陶瓷層21A之間，藉由第1配線層11A或第1熱傳達金屬層31A中之任一者被連結，一體地設置構成第1配線基板5A之複數第1陶瓷層21A。另外，第2配線基板5B之各第2陶瓷層21B之間，藉由第2配線層11B或第2熱傳達金屬層31B中之任一者被連結，一體地設置構成第2配線基板5B之複數第2陶瓷層21B。 Furthermore, the first ceramic layers 21A of the first wiring board 5A are connected by either the first wiring layer 11A or the first heat transfer metal layer 31A, and are integrally provided to constitute the first wiring board 5A. The plurality of first ceramic layers 21A. In addition, the second ceramic layers 21B of the second wiring board 5B are connected by either the second wiring layer 11B or the second heat transfer metal layer 31B, and are integrally provided to constitute the second wiring board 5B. A plurality of second ceramic layers 21B.

被配設在圖9之下側的第1配線基板5A，如圖10所示般，設置有7個俯視長方形狀之第1配線層11A，2個俯視正方形狀之第1配線層12A，並且如圖11所示般，設置8個俯視長方形狀之第1傳達金屬層31A。再者，在被配設在圖9之上側的第2配線基板5B，如圖12所示般，設置8個俯視長方形狀之第2配線層11B，並且如圖13所示般設置7個俯視長方形狀之第2熱傳達金屬層31B，和設置2個俯視正方形狀之第2熱傳達金屬層32B。 As shown in FIG. 10 , the first wiring board 5A arranged on the lower side of FIG. 9 is provided with seven first wiring layers 11A having a rectangular shape in plan view and two first wiring layers 12A having a square shape in plan view, and As shown in FIG. 11 , eight first transmission metal layers 31A having a rectangular shape in plan view are provided. Furthermore, on the second wiring board 5B arranged on the upper side of FIG. 9 , as shown in FIG. 12 , eight second wiring layers 11B having a rectangular shape in plan view are provided, and as shown in FIG. 13 , seven second wiring layers 11B are provided in plan view. A rectangular second heat transfer metal layer 31B and two second heat transfer metal layers 32B having a square shape in plan view are provided.

第1配線基板5A之第1配線層11A係連接相鄰的P型熱電轉換元件3和N型熱電轉換元件4之間而被形成，並且，跨越兩熱電轉換元件3、4之第1陶瓷層21A、21A彼此之間而被形成。另外，第1配線層12A僅獨立形成在無形成有第1配線層11A之第1陶瓷層21A。再者，第1熱傳達金屬層31A跨越相鄰的兩第1配線層11A、11A之間被形成，並且，跨越相鄰的兩第1陶瓷層21A、21A之間而被形成。 The first wiring layer 11A of the first wiring board 5A is formed by connecting the adjacent P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 and spanning the first ceramic layers of both thermoelectric conversion elements 3 and 4 21A, 21A are formed between each other. In addition, the first wiring layer 12A is independently formed only on the first ceramic layer 21A on which the first wiring layer 11A is not formed. In addition, the first heat transfer metal layer 31A is formed so as to span between the two adjacent first wiring layers 11A and 11A, and is also formed so as to span between the two adjacent first ceramic layers 21A and 21A.

再者，第2配線基板5B之第2配線層11B係連接相鄰的P型熱電轉換元件3和N型熱電轉換元件4之間而被形成，並且，跨越兩熱電轉換元件3、4之第2陶瓷層 21B、21B彼此之間而被形成。再者，第2熱傳達金屬層31B跨越相鄰的兩第2配線層11B、11B之間被形成，並且，跨越相鄰的兩第2陶瓷層21B、21B之間而被形成。另外，第2熱傳達金屬層32B僅獨立形成在無形成有第2熱傳達金屬層32B之第2陶瓷層21B。 In addition, the second wiring layer 11B of the second wiring board 5B is formed to connect the adjacent P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4, and is formed across the second thermoelectric conversion elements 3 and 4. 2 ceramic layers 21B, 21B are formed between each other. In addition, the second heat transfer metal layer 31B is formed so as to span between the two adjacent second wiring layers 11B and 11B, and is also formed so as to span between the two adjacent second ceramic layers 21B and 21B. In addition, the second heat transfer metal layer 32B is independently formed only on the second ceramic layer 21B on which the second heat transfer metal layer 32B is not formed.

再者，第1配線基板5A之第1配線層11A和第2配線基板5B之第2熱傳達金屬層31B藉由相同之金屬材料被形成同形狀(相同厚度，相同平面尺寸)。再者，第1配線基板5A之第1配線層12A和第2熱傳達金屬層32B，藉由相同之金屬材料被形成同形狀。再者，第1配線基板5A之第1熱傳達金屬層31A和第2配線基板5B之第2配線層11B，藉由相同之金屬材料被形成同形狀。如此一來，第1配線基板5A和第2配線基板5B藉由相同構成之1種類配線基板被構成。而且，藉由在如此被構成之一組配線基板5A、5B之間，交互串聯連接P型熱電轉換元件3和N型熱電轉換元件4，構成熱電轉換模組103。 Furthermore, the first wiring layer 11A of the first wiring board 5A and the second heat transfer metal layer 31B of the second wiring board 5B are formed of the same metal material in the same shape (same thickness, same plane size). In addition, the 1st wiring layer 12A of the 1st wiring board 5A and the 2nd heat-transfer metal layer 32B are formed in the same shape by the same metal material. Furthermore, the first heat transfer metal layer 31A of the first wiring board 5A and the second wiring layer 11B of the second wiring board 5B are formed in the same shape by the same metal material. In this way, the first wiring board 5A and the second wiring board 5B are constituted by one type of wiring board having the same configuration. Then, the thermoelectric conversion module 103 is constituted by alternately connecting the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4 in series between the set of wiring boards 5A and 5B thus constituted.

接著，針對構成如此之熱電轉換模組103之製造方法予以說明。第3實施型態之熱電轉換模組之製造方法藉由與第1實施型態之熱電轉換模組之製造方法之流程相同的流程而構成。因此，即使針對第3實施型態之熱電轉換模組之製造方法，使用圖2之流程圖進行說明。再者，由於第1配線基板5A和第2配線基板5B係藉由相同構成之1種類的配線基板而構成，故在工程S11~S13中，省略第2配線基板5B之製造工程的說明，僅針對第1配線基板5A之製造工程予以說明。Next, the manufacturing method which comprises such a thermoelectric conversion module 103 is demonstrated. The manufacturing method of the thermoelectric conversion module of 3rd Embodiment is comprised by the same flow as that of the manufacturing method of the thermoelectric conversion module of 1st Embodiment. Therefore, even with respect to the manufacturing method of the thermoelectric conversion module of 3rd Embodiment, it demonstrates using the flowchart of FIG. 2. FIG. In addition, since the first wiring board 5A and the second wiring board 5B are constituted by one type of wiring board with the same structure, in the processes S11 to S13, the description of the manufacturing process of the second wiring board 5B is omitted, and only the The manufacturing process of 5 A of 1st wiring boards is demonstrated.

(切割線形成工程) 　　首先，如圖14A及圖14B所示般，在構成第1陶瓷層21A之大型陶瓷母材205，形成用以分割複數陶瓷層21A之切割線202a、202b，在陶瓷母材205區劃複數(16個)第1陶瓷層形成區域203(切割線形成工程S11)。圖14A係將形成第1配線層11A、12A之陶瓷母材205之一方之面朝向表側而配置的陶瓷母材205之俯視圖，圖14B係表示將形成第1熱傳達金屬層31A之陶瓷母材205之另一方之面朝向表側而配置的陶瓷母材205之俯視圖。(Cutting Line Forming Process) First, as shown in FIGS. 14A and 14B , in the large-scale ceramic base material 205 constituting the first ceramic layer 21A, cut lines 202a and 202b for dividing the plurality of ceramic layers 21A are formed, and in the ceramic base material 205 The material 205 divides plural (16) first ceramic layer forming regions 203 (cut line forming process S11). 14A is a plan view of the ceramic base material 205 arranged with one surface of the ceramic base material 205 forming the first wiring layers 11A and 12A facing the front side, and FIG. 14B is a view showing the ceramic base material on which the first heat transfer metal layer 31A will be formed A plan view of the ceramic base material 205 with the other surface of the 205 facing the front side.

在陶瓷母材205之一方之面，如圖14A所示般，以通過第1配線層11A、12A之接合預定區域之間之方式，形成在除第1配線層11A、12A之接合預定區域之外的非接合部，形成切割線202b。具體而言，在陶瓷母材205之橫向形成以貫通相向的邊彼此之直線所形成的2條切割線202b。On one side of the ceramic base material 205, as shown in FIG. 14A , it is formed in a manner to pass between the planned joining regions of the first wiring layers 11A and 12A except for the planned joining regions of the first wiring layers 11A and 12A. The outer non-joint portion forms a cutting line 202b. Specifically, two dicing lines 202b are formed in the lateral direction of the ceramic base material 205 as a straight line penetrating the opposing sides.

另外，在陶瓷母材205之另一方之面，如圖14B所示般，以通過第1熱傳達金屬層31A之接合預定區域之間之方式，形成在除第1熱傳達金屬層31A之接合預定區域之外的非接合部，形成切割線202a、202b。具體而言，在貫通在陶瓷母材205之縱向形成以貫通相向的邊彼此之直線所形成的3條切割線202a，和在陶瓷母材205之橫向形成以貫通相向的邊彼此之直線所形成的1條切割線202b。In addition, on the other surface of the ceramic base material 205 , as shown in FIG. 14B , a junction other than the first heat transfer metal layer 31A is formed so as to pass between the junction intended regions of the first heat transfer metal layer 31A. Cut lines 202a and 202b are formed in the non-joint portion outside the predetermined area. Specifically, the three cutting lines 202a formed in the longitudinal direction of the ceramic base material 205 and formed by a straight line passing through the opposing sides, and the three cutting lines 202a formed in the lateral direction of the ceramic base material 205 by a straight line passing through the opposing sides are formed. 1 cutting line 202b.

如此一來，藉由在陶瓷母材205之一方之面和另一方之面形成切割線202a、202b，可以在陶瓷母材205之縱向以等間隔形成3條切割線202a，並且在橫向以等間隔形成3條切割線202b，形成切割線202a、202b在縱橫各3條的格子狀。該些6條切割線202a、202b，在陶瓷母材205，以在縱橫各4個整齊排列被區劃成第1陶瓷層21A之外形形狀之大小的16個第1陶瓷層形成區域203而形成。In this way, by forming the cutting lines 202a and 202b on one side and the other side of the ceramic base material 205, three cutting lines 202a can be formed at equal intervals in the longitudinal direction of the ceramic base material 205, and at equal intervals in the lateral direction. Three dicing lines 202b are formed at intervals, and three dicing lines 202a and 202b are formed in a lattice shape in each of three vertical and horizontal lines. These six dicing lines 202a and 202b are formed in the ceramic base material 205 by arranging 16 first ceramic layer forming regions 203 which are divided into the outer shape of the first ceramic layer 21A and are aligned in four vertical and horizontal directions.

另外，切割線202a、202b並非僅形成在第1配線層11A、12A之非接合部及第1熱傳達金屬層31A之非接合部，亦形成在第1配線11A之接合部及第1熱傳達金屬層31A之接合部，亦可以形成在陶瓷母材205之兩面。In addition, the dicing lines 202a and 202b are not only formed in the non-joining parts of the first wiring layers 11A and 12A and the non-joining parts of the first heat transfer metal layer 31A, but are also formed on the joint parts of the first wiring 11A and the first heat transfer parts. The joint portion of the metal layer 31A may be formed on both sides of the ceramic base material 205 .

(金屬層形成工程) 　　於切割線形成工程S11後，如圖15A所示般，在陶瓷母材205之一方之面形成第1配線層11A、12A，如圖15B所示般，在陶瓷母材205之另一方之面形成第1熱傳達金屬層31A，在陶瓷母材205之兩面形成接合第1配線層11A、12A和第1熱傳達金屬層31A之疊層體206(金屬層形成工程S12)。(Metal layer forming process) After the dicing line forming process S11, as shown in FIG. 15A, the first wiring layers 11A and 12A are formed on one surface of the ceramic base material 205, and as shown in FIG. 15B, the ceramic base material is The first heat transfer metal layer 31A is formed on the other side of the 205, and the laminate 206 joining the first wiring layers 11A, 12A and the first heat transfer metal layer 31A is formed on both sides of the ceramic base material 205 (metal layer forming process S12 ).

雖然省略詳細說明，但是在陶瓷母材205之一方之面接合成為第1配線層11A、12A之金屬板，並且在陶瓷母材205之另一方之面接合成為第1熱傳達金屬層31A之金屬板之後，藉由施予蝕刻處理，在陶瓷母材205之一方之面圖案製作第1配線層11A、12A，並且，在陶瓷母材205之另一方之面圖案製作第1熱傳達金屬層31A。此時，因切割線202a、202b形成在除第1配線層11A、11B之接合預定區域之外的非接合部和除第1熱傳達金屬層31A之接合預定區域之外的非接合部，故被重疊形成在切割線202a、202b之金屬層部分(金屬板)被除去，可以使切割線202a、202b之全體露出。Although detailed description is omitted, one side of the ceramic base material 205 is joined to form the metal plates of the first wiring layers 11A and 12A, and the other side of the ceramic base material 205 is joined to form the metal of the first heat transfer metal layer 31A After that, by performing an etching process, the first wiring layers 11A and 12A are patterned on one surface of the ceramic base material 205 , and the first heat transfer metal layer 31A is patterned on the other surface of the ceramic base material 205 . At this time, since the dicing lines 202a and 202b are formed in the non-joining portions other than the intended bonding regions of the first wiring layers 11A and 11B and the non-joining portions other than the intended bonding regions of the first heat transfer metal layer 31A, the The metal layer portion (metal plate) formed overlying the dicing lines 202a and 202b is removed, and the entirety of the dicing lines 202a and 202b can be exposed.

另外，第1配線層11A、12A及第1熱傳達金屬層31A藉由將事先被圖案製作之金屬板接合於陶瓷母材205，不用施予蝕刻處理亦可以形成。再者，第1配線層11A、12A亦可以藉由銀(Ag)之燒結體構成。In addition, the first wiring layers 11A, 12A and the first heat transfer metal layer 31A can be formed without performing an etching process by bonding a metal plate patterned in advance to the ceramic base material 205 . Furthermore, the first wiring layers 11A and 12A may be formed of a sintered body of silver (Ag).

(分割工程) 　　於金屬層形成工程S12之後，藉由以在形成有切割線202a、202b之面側成為凸之方式，彎曲陶瓷母材205，沿著切割線202a、202b分割疊層體206之陶瓷母材205，使第1陶瓷層形成區域203個片化成各個第1陶瓷層21A。依此，形成接合第1配線層11A、12A，和第1陶瓷層21A，和第1熱傳達金屬層31A的第1配線基板5A(分割工程S13)。(Dividing process) After the metal layer forming process S12, the ceramic base material 205 is bent so that the surface side on which the dicing lines 202a and 202b are formed is convex, and the laminated body 206 is divided along the dicing lines 202a and 202b. The ceramic base material 205 is formed by chipping the first ceramic layer forming regions 203 into individual first ceramic layers 21A. In this way, the first wiring board 5A that joins the first wiring layers 11A and 12A, the first ceramic layer 21A, and the first heat transfer metal layer 31A is formed (division process S13 ).

因切割線202a、202b被形成在第1配線層11A或第1熱傳達金屬層31A之接合面之相反側，故可以沿著切割線202a、202b容易分割陶瓷母材205。再者，因切割線202a、202b係以貫通陶瓷母材205之相向的邊彼此的單純直線所形成，故可以沿著切割線202a、202b圓滑地分割陶瓷母材205。另外，第2配線基板5B係藉由與第1配線基板5A同樣的工程而被製造。Since the dicing lines 202a and 202b are formed on the opposite side of the bonding surface of the first wiring layer 11A or the first heat transfer metal layer 31A, the ceramic base material 205 can be easily divided along the dicing lines 202a and 202b. Furthermore, since the cut lines 202a and 202b are formed by simple straight lines penetrating the opposing sides of the ceramic base material 205, the ceramic base material 205 can be smoothly divided along the cut lines 202a and 202b. In addition, the 2nd wiring board 5B is manufactured by the same process as the 1st wiring board 5A.

如此被形成的第1配線基板5A雖然具有複數第1配線11A、12A，但是成為藉由第1熱傳達金屬層31A，連結各第1配線層11A、11A或11A、12A之間的狀態。再者，因被個片化的第1陶瓷層21A藉由第1配線層11A或第1熱傳達金屬層31A被連結，故在第1配線基板5A中，可以一體地處理第1配線層11A、12A、第1陶瓷層21A、第1熱傳達金屬層31A。再者，被構成與第1配線基板5A相同的第2配線基板5B，也可以一體地處理第2配線層11B、第2陶瓷層21B、第2熱傳達金屬層31B、32B。The first wiring board 5A thus formed has a plurality of first wirings 11A and 12A, but is in a state where the first wiring layers 11A and 11A or 11A and 12A are connected by the first heat transfer metal layer 31A. Furthermore, since the individualized first ceramic layers 21A are connected by the first wiring layer 11A or the first heat transfer metal layer 31A, the first wiring layer 11A can be integrally processed in the first wiring board 5A. , 12A, the first ceramic layer 21A, and the first heat transfer metal layer 31A. In addition, the second wiring board 5B having the same configuration as the first wiring board 5A may be integrally processed with the second wiring layer 11B, the second ceramic layer 21B, and the second heat transfer metal layers 31B and 32B.

(接合工程) 　　接著，在一方之第1配線基板5A之第1配線層11A，接合P型熱電轉換元件3之一方之端面和N型熱電轉換元件4之一方之端面，並且在另一方之第2配線基板5B之第2配線層11B接合P型熱電轉換元件3之另一方之端麵和N型熱電轉換元件4之另一方之端面(接合工程S14)。依此，如圖9所示般，製造在兩配線基板5A、5B之間，交互串聯連接P型熱電轉換元件3和N型熱電轉換元件4的熱電轉換模組103。(Joining Process) Next, one end face of the P-type thermoelectric conversion element 3 and one end face of the N-type thermoelectric conversion element 4 are joined to the first wiring layer 11A of the one first wiring board 5A, and the other end face 2. The second wiring layer 11B of the wiring board 5B is bonded to the other end face of the P-type thermoelectric conversion element 3 and the other end face of the N-type thermoelectric conversion element 4 (bonding step S14). In this way, as shown in FIG. 9 , a thermoelectric conversion module 103 is fabricated between the two wiring boards 5A and 5B, and the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4 are alternately connected in series.

具體而言，各配線層11A、11B，和P型熱電轉換元件3及N型熱電轉換元件4之接合，藉由使用糊膏或硬焊材之接合，根據施加荷重的固相擴散接合等進行接合。而且，與圖5～圖7所示之第1實施型態之熱電轉換模組101相同，在一組加壓板401A、401B之間，使各熱電轉換元件3、4和第1配線層11A、11B密接而均勻地加壓而進行。Specifically, the wiring layers 11A, 11B, and the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are bonded by bonding using paste or brazing material, solid-phase diffusion bonding by applying a load, or the like. engage. Furthermore, as in the thermoelectric conversion module 101 of the first embodiment shown in FIGS. 5 to 7 , the thermoelectric conversion elements 3 and 4 and the first wiring layer 11A are formed between a set of pressure plates 401A and 401B. , 11B are in close contact and uniformly pressurized.

雖然省略圖示，但是在該接合工程S14中，可以與第1實施型態相同使補足構件，或在疊層方向重疊配置偶數個挾持體而進行。依此，在第1配線層11A、11B和P型熱電轉換元件3及N型熱電轉換元件4之接合時，可以使各熱電轉換元件3、4和第1配線層11A、11B密接而分別均勻地加壓。再者，藉由在疊層方向重疊配置偶數個挾持體之情況，藉由先在各挾持體之間配設具有緩衝性之石墨薄片，可以在兩配線基板5A、5B之面方向之各熱電轉換元件3、4之配置處，補正各個傾斜，可以更均勻地加壓各熱電轉換元件3、4和兩配線基板5A、5B。Although illustration is omitted, in this bonding process S14, it is possible to perform the same as the first embodiment by arranging complementary members, or by arranging an even number of clamping bodies to overlap in the lamination direction. In this way, when the first wiring layers 11A and 11B are joined to the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4, the thermoelectric conversion elements 3 and 4 and the first wiring layers 11A and 11B can be brought into close contact with each other so as to be uniform. pressurized. Furthermore, in the case of arranging an even number of clamping bodies in a stacked direction, by first arranging a graphite sheet having a buffering property between the clamping bodies, the thermoelectricity of the two wiring boards 5A and 5B in the surface direction can be obtained. In the arrangement of the conversion elements 3 and 4 , each inclination is corrected, so that the thermoelectric conversion elements 3 and 4 and the two wiring boards 5A and 5B can be pressurized more uniformly.

另外，如上述般，雖然第1配線基板5A具有複數第1配線層11A、12A，但是因各第1配線層11A、12A之間藉由第1熱傳達金屬層31A被連結，故可以一體地處理各第1配線層11A、12A，可以容易地處理第1配線基板5A。同樣地，第2配線基板5B雖然具有複數第2配線層11B，但是因各第2配線層11B之間藉由第2熱傳達金屬層31B被連結，故可以一體地處理各第2配線層11B，可以容易地處理第2配線基板5B。In addition, although the first wiring board 5A has the plurality of first wiring layers 11A and 12A as described above, since the first wiring layers 11A and 12A are connected by the first heat transfer metal layer 31A, the first wiring layers 11A and 12A can be integrated with each other. By processing each of the first wiring layers 11A and 12A, the first wiring board 5A can be easily processed. Similarly, although the second wiring board 5B has a plurality of second wiring layers 11B, since the second wiring layers 11B are connected by the second heat transfer metal layer 31B, the second wiring layers 11B can be integrally processed , the second wiring board 5B can be easily handled.

再者，如第3實施型態之製造方法般，藉由在大型的陶瓷母材205形成第1配線層11A、12A和第1熱傳達金屬層31A之後，沿著切割線202a、202b分割陶瓷母材205，可以容易形成具有被配列成特定圖案之第1配線層11A、12A，和被個片化之第1陶瓷層21A的第1配線基板5A。而且，藉由使用該第1配線基板5A，可以容易製造接合(搭載)多數熱電轉換元件3、4之大型的熱電轉換模組103。Furthermore, as in the manufacturing method of the third embodiment, after forming the first wiring layers 11A and 12A and the first heat transfer metal layer 31A on the large ceramic base material 205 , the ceramics are divided along the dicing lines 202 a and 202 b. The base material 205 can easily form the first wiring board 5A having the first wiring layers 11A and 12A arranged in a specific pattern and the first ceramic layers 21A that are individualized. Moreover, by using this 1st wiring board 5A, the large-sized thermoelectric conversion module 103 which joins (mounts) many thermoelectric conversion elements 3 and 4 can be easily manufactured.

再者，即使在如此被製造的第3實施型態之熱電轉換模組103中，構成第1配線基板5A之各第1陶瓷層21A被獨立形成在每個熱電轉換元件3、4，剛體之第1陶瓷層21A中之P型熱電轉換元件3和N型熱電轉換元件4之間之連接被分斷。即使針對與第1配線基板5A相向配置之第2配線基板5B，各第2陶瓷層21B被獨立形成在每個熱電轉換元件3、4，在剛體之第2陶瓷層21B中之P型熱電轉換元件3和N型熱電轉換元件4之間的連接被分斷。因此，各熱電轉換元件3、4藉由各陶瓷層21A、21B，無隨著熱伸縮的變形被拘束之情形。Furthermore, even in the thermoelectric conversion module 103 of the third embodiment thus manufactured, each of the first ceramic layers 21A constituting the first wiring board 5A is independently formed on each of the thermoelectric conversion elements 3 and 4, and the rigid bodies are formed separately. The connection between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 in the first ceramic layer 21A is disconnected. Even for the second wiring board 5B arranged opposite to the first wiring board 5A, each second ceramic layer 21B is independently formed for each thermoelectric conversion element 3, 4, and the P-type thermoelectric conversion in the rigid second ceramic layer 21B The connection between the element 3 and the N-type thermoelectric conversion element 4 is disconnected. Therefore, the thermoelectric conversion elements 3 and 4 are not restrained from deformation due to thermal expansion and contraction by the ceramic layers 21A and 21B.

再者，僅各第1陶瓷層21A之間藉由第1配線層11A或第1熱傳達金屬層31A中之任一者被連結，僅第2陶瓷層21B之間藉由第2配線11B或第2熱傳達金屬層31B中之任一者被連結。依此，相鄰的P型熱電轉換元件3和N型熱電轉換元件4之熱伸縮差，可以使連接熱電轉換元件3、4之間的第1配線層11A或第1熱傳達金屬層31A之連接部分、第2配線層11B或第2熱傳達金屬層31B之連接部分變形而吸收尺寸變化。因此，可以抑制藉由熱伸縮差而產生在各熱電轉換元件3、4內之熱應力的發生。而且，可以防止藉由各熱電轉換元件3、4之熱伸縮差，熱電轉換元件3、4從配線基板5A、5B(第1配線層11A、12A、第2配線層11B)被剝離，或在熱電轉換元件3、4產生裂紋之情形。因此，可以良好地維持藉由第1配線層11A、12A和第2配線層11B被連接之熱電轉換元件3、4間之電性連接，且可以良好地維持熱電轉換模組103之接合可靠性、熱傳導性及導電性。In addition, only the first ceramic layers 21A are connected by either the first wiring layer 11A or the first heat transfer metal layer 31A, and only the second ceramic layers 21B are connected by the second wiring 11B or Any one of the second heat transfer metal layers 31B is connected. Accordingly, the difference in thermal expansion and contraction between the adjacent P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 can make the first wiring layer 11A or the first heat transfer metal layer 31A connecting between the thermoelectric conversion elements 3 and 4 . The connection portion, the connection portion of the second wiring layer 11B or the second heat transfer metal layer 31B is deformed to absorb the dimensional change. Therefore, the occurrence of thermal stress in each of the thermoelectric conversion elements 3 and 4 due to the difference in thermal expansion and contraction can be suppressed. Furthermore, the thermoelectric conversion elements 3 and 4 can be prevented from being peeled off from the wiring boards 5A and 5B (the first wiring layers 11A and 12A and the second wiring layers 11B) due to the difference in thermal expansion and contraction of the respective thermoelectric conversion elements 3 and 4, The thermoelectric conversion elements 3 and 4 are cracked. Therefore, the electrical connection between the thermoelectric conversion elements 3 and 4 connected by the first wiring layers 11A, 12A and the second wiring layer 11B can be well maintained, and the bonding reliability of the thermoelectric conversion module 103 can be well maintained , thermal conductivity and electrical conductivity.

再者，因在各配線基板5A、5B，分別設置有絕緣基板亦即陶瓷層21A或21B，故當在熱源等設置熱電轉換模組103之時，可以藉由陶瓷層21A或21B防止熱源等和配線層11A、12A或11B接觸之情形。因此，可以確實地迴避熱源等和配線層11A、12A或11B之電性洩漏，且可以良好地維持絕緣狀態。Furthermore, since the ceramic layers 21A and 21B, which are insulating substrates, are respectively provided on the wiring boards 5A and 5B, when the thermoelectric conversion module 103 is provided on the heat source or the like, the ceramic layer 21A or 21B can prevent the heat source and the like. In the case of contact with the wiring layer 11A, 12A or 11B. Therefore, electrical leakage between the heat source and the like and the wiring layers 11A, 12A, or 11B can be reliably avoided, and the insulating state can be maintained well.

再者，因在配線基板5A、5B，設置有熱傳達金屬層31A或31B、32B，故當在熱源等設置熱電轉換模組103之時，藉由熱傳達金屬層31A、31B、32B，可以提高熱源等和熱電轉換模組103之密接性，可以提升導傳達性。因此，可以提升熱電轉換模組103之熱電交換性能(發電效率)。Furthermore, since the heat transfer metal layers 31A or 31B and 32B are provided on the wiring boards 5A and 5B, when the thermoelectric conversion module 103 is installed on the heat source or the like, the heat transfer metal layers 31A, 31B and 32B can be used to make the thermoelectric conversion module 103 . Improving the adhesion between the heat source, etc. and the thermoelectric conversion module 103 can improve the conductivity. Therefore, the thermoelectric exchange performance (power generation efficiency) of the thermoelectric conversion module 103 can be improved.

在上述實施型態之熱電轉換模組101、102、103中，雖然將第1配線基板2A、5A和第2配線基板2B、5B設成具有獨立形成在每個熱電轉換元件3、4之複數第1陶瓷層21A或第2陶瓷層21B之構成，但是即使設成如圖16A～圖18B所示之第1配線基板6A～6C般，設成具有被分離在複數個熱電轉換元件3、4之每個上，且在任一的P型熱電轉換元件3和N型熱電轉換元件4之間被分離的第1陶瓷層22A～22C的構成亦可。In the thermoelectric conversion modules 101 , 102 , and 103 of the above-described embodiment, although the first wiring boards 2A and 5A and the second wiring boards 2B and 5B are provided with a plurality of independently formed thermoelectric conversion elements 3 and 4 Although the configuration of the first ceramic layer 21A or the second ceramic layer 21B is the same as that of the first wiring boards 6A to 6C shown in FIGS. 16A to 18B , it has a plurality of thermoelectric conversion elements 3 and 4 separated from each other. The configuration of the first ceramic layers 22A to 22C which are separated between any one of the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4 may also be employed.

例如，圖16A及圖16B所示之第1配線基板6A具有與第2實施型態之熱電轉換模組103之第1配線基板5A相同之第1配線層11A、12A和第1熱傳達金屬層31A所構成之圖案。但是，第1陶瓷層22A被分離在相鄰之一組(2個)之熱電轉換元件3、4，藉由合計8個第1陶瓷層22A被構成。而且，如圖16A所示般，各第1陶瓷層22A、22A之間，藉由第1配線層11A被連結，一體地設置構成第1配線基板6A之複數第1陶瓷層22A。再者，第1配線層6A之第1配線層11A係連接一組P型熱電轉換元件3和N型熱電轉換元件4之間而被形成，並且，跨越兩熱電轉換元件3、4之第1陶瓷層22A、22A彼此之間而被形成。For example, the first wiring substrate 6A shown in FIGS. 16A and 16B has the same first wiring layers 11A and 12A and the first heat transfer metal layer as the first wiring substrate 5A of the thermoelectric conversion module 103 of the second embodiment. The pattern formed by 31A. However, the first ceramic layers 22A are separated from the thermoelectric conversion elements 3 and 4 in one adjacent group (two), and are constituted by a total of eight first ceramic layers 22A. Then, as shown in FIG. 16A , the first ceramic layers 22A and 22A are connected by the first wiring layer 11A, and the plurality of first ceramic layers 22A constituting the first wiring board 6A are integrally provided. Furthermore, the first wiring layer 11A of the first wiring layer 6A is formed to connect a set of the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4, and spans the first of the two thermoelectric conversion elements 3 and 4. The ceramic layers 22A and 22A are formed between each other.

即使在使用如此被構成之第1配線基板6A之熱電轉換模組中，剛體之第1陶瓷層22A在任一的P型熱電轉換元件3和N型熱電轉換元件4之間被分斷，設置有複數。因此，在該些P型熱電轉換元件3和N型熱電轉換元件4之間，藉由互相被接合於對方側之第1陶瓷層22A，無隨著P型熱轉換元件3和N型熱電轉換元件4之熱伸縮的變形被拘束之情形。再者，在各第1陶瓷層22A之分離部分的P型熱電轉換元件3和N型熱電轉換元件4之熱伸縮差，可以使連接熱電轉換元件3、4之間的第1配線層11A之連接部分變形而吸收尺寸變化。因此，可以抑制藉由各熱電轉換元件3、4之熱伸縮差而產生在各熱電轉換元件3、4內之熱應力的發生。Even in the thermoelectric conversion module using the first wiring board 6A thus constituted, the first ceramic layer 22A of the rigid body is divided between any one of the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4, and is provided with plural. Therefore, between the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4, by being mutually bonded to the first ceramic layer 22A on the opposite side, there is no connection between the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements. The case where the deformation of the thermal expansion and contraction of the element 4 is restrained. Furthermore, the difference in thermal expansion and contraction between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 in the separated portion of each first ceramic layer 22A can make the first wiring layer 11A connecting the thermoelectric conversion elements 3 and 4 The connecting portion deforms to absorb dimensional changes. Therefore, the occurrence of thermal stress in each thermoelectric conversion element 3 and 4 due to the difference in thermal expansion and contraction of each thermoelectric conversion element 3 and 4 can be suppressed.

另外，可以使第1陶瓷層之個數較圖16A及圖16B所示之第1配線基板6A更少。例如，圖17A及圖17B所示之第1配線基板6B之第1陶瓷層22B被分離在4個熱電轉換元件3、4之每個，藉由合計4個第1陶瓷層22B被構成。再者，圖18A及圖18B所示之第1配線基板6C之第1陶瓷層22C被分離在8個熱電轉換元件3、4之每個，藉由合計2個第1陶瓷層22C被構成。In addition, the number of the first ceramic layers can be made smaller than that of the first wiring board 6A shown in FIGS. 16A and 16B . For example, the first ceramic layer 22B of the first wiring board 6B shown in FIGS. 17A and 17B is separated into each of the four thermoelectric conversion elements 3 and 4, and is constituted by a total of four first ceramic layers 22B. Furthermore, the first ceramic layer 22C of the first wiring board 6C shown in FIGS. 18A and 18B is separated from each of the eight thermoelectric conversion elements 3 and 4, and is constituted by a total of two first ceramic layers 22C.

如此一來，藉由在任一的P型熱電轉換元件3和N型熱電轉換元件4之間，分斷設置被複數設置的第1陶瓷層22B、22C，在該些P型熱電轉換元件3和N型熱電轉換元件4之間，藉由互相被接合於對方側之第1陶瓷層22B、22C，無隨著P型熱電轉換元件3和N型熱電轉換元件4之熱伸縮的變形被拘束之情形。再者，在各第1陶瓷層22B、22C之分離部分的P型熱電轉換元件3和N型熱電轉換元件4之熱伸縮差，可以使連接熱電轉換元件3、4之間的第1配線層11A之連接部分變形而吸收尺寸變化。因此，可以抑制藉由各熱電轉換元件3、4之熱伸縮差而產生在各熱電轉換元件3、4內之熱應力的發生。In this way, the plurality of first ceramic layers 22B and 22C are provided in a disconnected manner between any of the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4 . The N-type thermoelectric conversion elements 4 are bonded to each other by the first ceramic layers 22B and 22C on the other side, so that the deformation due to the thermal expansion and contraction of the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4 is not restricted. situation. Furthermore, the difference in thermal expansion and contraction between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 at the separated portion of the first ceramic layers 22B and 22C allows the first wiring layer to be connected between the thermoelectric conversion elements 3 and 4. The connecting portion of 11A deforms to absorb dimensional changes. Therefore, the occurrence of thermal stress in each thermoelectric conversion element 3 and 4 due to the difference in thermal expansion and contraction of each thermoelectric conversion element 3 and 4 can be suppressed.

而且，即使在如此使用具有複數第1配線層11A之大型第1配線基板6A～6C的熱電轉換模組中，亦可以抑制藉由各熱電轉換元件3、4之熱伸縮而產生在各熱電轉換元件3、4內之熱應力的發生。因為，可以防止藉由各熱電轉換元件3、4從第1配線基板6A～6C(第1配線層11A)被剝離，或在熱電轉換元件3、4產生裂紋之情形。因此，可以良好地維持藉由第1配線層11A被連接之兩熱電轉換元件3、4間之電性連接，且可以良好地維持熱電轉換模組之接合可靠性、熱傳導性及導電性。In addition, even in the thermoelectric conversion module using the large-sized first wiring boards 6A to 6C having the plurality of first wiring layers 11A in this way, it is possible to suppress the occurrence of the thermoelectric conversion in the respective thermoelectric conversion elements due to the thermal expansion and contraction of the thermoelectric conversion elements 3 and 4 . The occurrence of thermal stress within components 3,4. This is because it is possible to prevent the thermoelectric conversion elements 3 and 4 from being peeled off from the first wiring boards 6A to 6C (the first wiring layer 11A), or the occurrence of cracks in the thermoelectric conversion elements 3 and 4 . Therefore, the electrical connection between the two thermoelectric conversion elements 3 and 4 connected by the first wiring layer 11A can be well maintained, and the bonding reliability, thermal conductivity, and electrical conductivity of the thermoelectric conversion module can be well maintained.

另外，在上述實施型態之第1配線基板2A、5A、6A～6C中，雖然設成具有各被分離成複數圖案之第1熱傳達金屬層31A、32A之構成，但是如圖19A及圖19B所示之第1配線基板7A般，亦可以將第1熱傳達金屬層31C構成連結3個以上之第1陶瓷層22A的大型。在此情況，因可以藉由第1熱傳達金屬層31C連結各第1陶瓷層22A，故不藉由第1配線層11A連結各第1陶瓷層22A，可以使第1配線基板7A一體化而予以構成。In addition, in the first wiring boards 2A, 5A, 6A to 6C of the above-described embodiment, although the first heat transfer metal layers 31A and 32A are each separated into a plurality of patterns in a configuration, the configuration shown in FIG. 19A and FIG. Like the first wiring board 7A shown in 19B, the first heat transfer metal layer 31C may be configured to have a large size in which three or more first ceramic layers 22A are connected. In this case, since the first ceramic layers 22A can be connected by the first heat transfer metal layer 31C, the first ceramic layers 22A can be integrated with the first wiring board 7A without connecting the first ceramic layers 22A by the first wiring layer 11A. be constituted.

即使在使用圖19A及圖19B所示之第1配線基板7A之熱電轉換模組中，藉由在任一的P型熱電轉換元件3和N型熱電轉換元件4之間分斷設置被複數設置的第1陶瓷層22A，在該些P型熱電轉換元件3和N型熱電轉換元件4之間，藉由互相被接合於對方側之第1陶瓷層22A，無隨著P型熱電轉換元件3和N型熱電轉換元件4之熱伸縮的變形被拘束之情形。再者，在各第1陶瓷層22A之分離部分的P型熱電轉換元件3和N型熱電轉換元件4之熱伸縮差，可以使連接熱電轉換元件3、4之間的第1熱傳達金屬層31C之連接部分變形而吸收尺寸變化。因此，可以抑制藉由各熱電轉換元件3、4之熱伸縮差而產生在各熱電轉換元件3、4內之熱應力的發生。Even in the thermoelectric conversion module using the first wiring board 7A shown in FIGS. 19A and 19B , a plurality of thermoelectric The first ceramic layer 22A, between the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4, is mutually bonded to the first ceramic layer 22A on the opposite side, and there is no connection between the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4. The case where the thermal expansion and contraction of the N-type thermoelectric conversion element 4 is restrained. Furthermore, the difference in thermal expansion and contraction between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 in the separated portion of each first ceramic layer 22A can make the first heat transfer metal layer connecting the thermoelectric conversion elements 3 and 4 possible. The connecting portion of 31C deforms to absorb dimensional changes. Therefore, the occurrence of thermal stress in each thermoelectric conversion element 3 and 4 due to the difference in thermal expansion and contraction of each thermoelectric conversion element 3 and 4 can be suppressed.

另外，在上述實施型態中，第2配線層、第2陶瓷層及第2熱傳達金屬層可以分別設成與第1配線層、第1陶瓷層及第2熱傳達金屬層相同之構成。Moreover, in the said embodiment, the 2nd wiring layer, the 2nd ceramic layer, and the 2nd heat-transfer metal layer can be provided with the same structure as the 1st wiring layer, the 1st ceramic layer, and the 2nd heat-transfer metal layer, respectively.

並且，本發明並不限定於上述實施型態之構成，只要在不脫離本發明之主旨的範圍，可增加各種變更。 [產業上之利用可能性]In addition, the present invention is not limited to the configuration of the above-described embodiment, and various modifications can be added without departing from the gist of the present invention. [Industrial use possibility]

若藉由本發明時，可以防止熱電轉換元件之熱伸縮性差所致的破壞，可以提供接合可靠性、熱傳導性及導電性優良的熱電轉換模組。According to the present invention, the thermoelectric conversion element can be prevented from being damaged due to poor thermal expansion and contraction properties, and a thermoelectric conversion module excellent in bonding reliability, thermal conductivity and electrical conductivity can be provided.

2A、5A、6A、6B、6C、7A‧‧‧第1配線基板2B、5B‧‧‧第2配線基板3‧‧‧P型熱電轉換元件(熱電轉換元件)4‧‧‧N型熱電轉換元件(熱電轉換元件)11A、12A‧‧‧第1配線層11B、12B‧‧‧第2配線層21A、22A、22B、22C‧‧‧第1陶瓷層21B‧‧‧第3陶瓷層31A、32A、31C‧‧‧第1熱傳達金屬層31B、32B‧‧‧第2熱傳達金屬層41‧‧‧金屬化層91‧‧‧配線201、205‧‧‧陶瓷母材202、202a、202b‧‧‧切割線203‧‧‧第1陶瓷層形成區域204、206‧‧‧疊層體301、302‧‧‧金屬板401A、401B‧‧‧加壓板405‧‧‧挾持體411、412、413‧‧‧補足構件420‧‧‧石墨薄片101、102、103‧‧‧熱電轉換模組2A, 5A, 6A, 6B, 6C, 7A‧‧‧First wiring board 2B, 5B‧‧‧Second wiring board 3‧‧‧P-type thermoelectric conversion element (thermoelectric conversion element) 4‧‧‧N-type thermoelectric conversion Element (thermoelectric conversion element) 11A, 12A‧‧‧first wiring layer 11B, 12B‧‧‧second wiring layer 21A, 22A, 22B, 22C‧‧‧first ceramic layer 21B‧‧‧third ceramic layer 31A, 32A, 31C‧‧First heat transfer metal layer 31B, 32B‧‧Second heat transfer metal layer 41‧‧‧Metalization layer 91‧‧‧Wiring 201, 205‧‧‧Ceramic base material 202, 202a, 202b ‧‧‧Cutting line 203‧‧‧First ceramic layer forming regions 204, 206‧‧‧Laminated bodies 301, 302‧‧‧Metal plates 401A, 401B‧‧‧Pressing plate 405‧‧‧Clamping bodies 411, 412 , 413‧‧‧Complementary components 420‧‧‧Graphite flakes 101, 102, 103‧‧‧Thermoelectric conversion module

圖1為表示第1實施型態之熱電轉換模組之縱剖面圖。 　　圖2為第1實施型態之熱電轉換模組之製造方法之流程圖。 　　圖3A為說明第1實施型態之熱電轉換模組之製造方法之切割線形成工程的縱剖面圖。 　　圖3B為說明第1實施型態之熱電換模組之製造方法之金屬層形成工程的縱剖面圖，表示工程之前半部分。 　　圖3C為說明第1實施型態之熱電換模組之製造方法之金屬層形成工程的縱剖面圖，表示工程之後半部分。 　　圖3D為說明第1實施型態之熱電轉換模組之製造方法之分割工程的縱剖面圖。 　　圖4A為說明第1實施型態之熱電轉換模組之製造方法之切割線形成工程的斜視圖。 　　圖4B為說明第1實施型態之熱電換模組之製造方法之金屬層形成工程的縱剖面圖，表示工程之前半部分。 　　圖4C為說明第1實施型態之熱電換模組之製造方法之金屬層形成工程的縱剖面圖，表示工程之後半部分。 　　圖4D為說明第1實施型態之熱電轉換模組之製造方法之分割工程的縱剖面圖。 　　圖5為表示第1實施型態之熱電轉換模組之接合工程的縱剖面圖。 　　圖6為說明其他實施型態之接合工程的縱剖面圖。 　　圖7為說明其他實施型態之接合工程的縱剖面圖。 　　圖8為表示第2實施型態之熱電轉換模組之正視圖。 　　圖9為表示第3實施型態之熱電轉換模組之正視圖。 　　圖10為圖9之A-A線之箭頭方向之水平剖面圖。 　　圖11為圖9之B-B線之箭頭方向之水平剖面圖。 　　圖12為圖9之C-C線之箭頭方向之水平剖面圖。 　　圖13為圖9之D-D線之箭頭方向之水平剖面圖。 　　圖14A為將在切割線形成工程中所形成的陶瓷母材之一方之面朝向表側的俯視圖。 　　圖14B為將在切割線形成工程中所形成的陶瓷母材之另一方之面朝向表側的俯視圖。 　　圖15A為將在金屬層形成工程中形成有配線層及熱傳達金屬層之圖案的陶瓷母材之一方之面朝向表側的俯視圖。 　　圖15B為將在金屬層形成工程中形成有配線層及熱傳達金屬層之圖案的陶瓷母材之另一方之面朝向表側的俯視圖。 　　圖16A為將第4實施型態之熱電轉換模組之第1配線基板之一方之面朝向表側之俯視圖。 　　圖16B為將圖16A所示之第1配線基板之另一方之面朝向表側的俯視圖。 　　圖17A為將第5實施型態之熱電轉換模組之第1配線基板之一方之面朝向表側之俯視圖。 　　圖17B為將圖17A所示之第1配線基板之另一方之面朝向表側的俯視圖。 　　圖18A為將第6實施型態之熱電轉換模組之第1配線基板之一方之面朝向表側之俯視圖。 　　圖18B為將圖18A所示之第1配線基板之另一方之面朝向表側的俯視圖。 　　圖19A為將第7實施型態之熱電轉換模組之第1配線基板之一方之面朝向表側之俯視圖。 　　圖19B為將圖19A所示之第1配線基板之另一方之面朝向表側的俯視圖。FIG. 1 is a longitudinal sectional view showing a thermoelectric conversion module of a first embodiment. Fig. 2 is a flow chart of the manufacturing method of the thermoelectric conversion module of the first embodiment. Fig. 3A is a longitudinal sectional view illustrating a cutting line forming process of the method for manufacturing the thermoelectric conversion module of the first embodiment. 3B is a longitudinal sectional view illustrating the metal layer forming process of the method for manufacturing the thermoelectric exchange module of the first embodiment, and shows the first half of the process. 3C is a longitudinal sectional view illustrating the metal layer forming process of the method for manufacturing the thermoelectric exchange module of the first embodiment, and shows the latter half of the process. Fig. 3D is a longitudinal sectional view illustrating a division process of the manufacturing method of the thermoelectric conversion module of the first embodiment. FIG. 4A is a perspective view illustrating a cutting line forming process of the method for manufacturing the thermoelectric conversion module of the first embodiment. 4B is a longitudinal sectional view illustrating the metal layer forming process of the method for manufacturing the thermoelectric exchange module of the first embodiment, showing the first half of the process. Fig. 4C is a longitudinal sectional view illustrating the metal layer forming process of the method for manufacturing the thermoelectric exchange module of the first embodiment, showing the latter half of the process. Fig. 4D is a longitudinal sectional view illustrating a division process of the method for manufacturing the thermoelectric conversion module of the first embodiment. Fig. 5 is a longitudinal sectional view showing the bonding process of the thermoelectric conversion module of the first embodiment. Fig. 6 is a longitudinal sectional view illustrating a joining process of another embodiment. Fig. 7 is a longitudinal sectional view illustrating a joining process of another embodiment. Fig. 8 is a front view showing the thermoelectric conversion module of the second embodiment. Fig. 9 is a front view showing the thermoelectric conversion module of the third embodiment. Fig. 10 is a horizontal cross-sectional view taken along the line A-A of Fig. 9 in the direction of the arrow. Fig. 11 is a horizontal cross-sectional view taken along the line B-B of Fig. 9 in the direction of the arrow. Fig. 12 is a horizontal cross-sectional view taken along the line C-C of Fig. 9 in the direction of the arrow. Fig. 13 is a horizontal cross-sectional view taken along the line D-D of Fig. 9 in the direction of the arrow. Fig. 14A is a plan view showing one of the surfaces of the ceramic base materials formed in the dicing line forming process toward the front side. Fig. 14B is a plan view with the other surface of the ceramic base material formed in the dicing line forming process facing the front side. Fig. 15A is a plan view of one side of the ceramic base material on which the pattern of the wiring layer and the heat transfer metal layer is formed in the metal layer formation process toward the front side. Fig. 15B is a plan view of the other side of the ceramic base material on which the pattern of the wiring layer and the heat transfer metal layer is formed in the metal layer forming process, facing the front side. Fig. 16A is a plan view of one side of the first wiring board of the thermoelectric conversion module of the fourth embodiment facing the front side. Fig. 16B is a plan view with the other surface of the first wiring board shown in Fig. 16A facing the front side. Fig. 17A is a plan view of one side of the first wiring board of the thermoelectric conversion module of the fifth embodiment facing the front side. Fig. 17B is a plan view with the other surface of the first wiring board shown in Fig. 17A facing the front side. Fig. 18A is a plan view showing one side of the first wiring board of the thermoelectric conversion module of the sixth embodiment facing the front side. Fig. 18B is a plan view with the other surface of the first wiring board shown in Fig. 18A facing the front side. Fig. 19A is a plan view of one side of the first wiring board of the thermoelectric conversion module of the seventh embodiment facing the front side. Fig. 19B is a plan view showing the other surface of the first wiring board shown in Fig. 19A facing the front side.

2A‧‧‧第1配線基板 2A‧‧‧First wiring board

3‧‧‧P型熱電轉換元件(熱電轉換元件) 3‧‧‧P-type thermoelectric conversion element (thermoelectric conversion element)

4‧‧‧N型熱電轉換元件(熱電轉換元件) 4‧‧‧N-type thermoelectric conversion element (thermoelectric conversion element)

11A‧‧‧第1配線層 11A‧‧‧1st wiring layer

21A‧‧‧第1陶瓷層 21A‧‧‧The first ceramic layer

32A‧‧‧第1熱傳達金屬層 32A‧‧‧The first heat transfer metal layer

41‧‧‧金屬化層 41‧‧‧Metalization

91‧‧‧配線 91‧‧‧Wiring

101‧‧‧熱電轉換模組 101‧‧‧Thermoelectric conversion module

Claims (11)

一種熱電轉換模組，具有：複數熱電轉換元件，其係由線膨脹係數不同之P型熱電轉換元件和N型熱電轉換元件所構成；第1配線基板，其係被配設在複數上述熱電轉換元件之一端側，上述第1配線基板具有：複數第1配線層，其係相鄰的上述P型熱電轉換元件和上述N型熱電轉換元件被接合成為連接狀態；和第1陶瓷層，其係被接合於與該第1配線層之上述P型熱電轉換元件和上述N型熱電轉換元件之接合面相反之面，且被分離成複數；和複數第1熱傳達金屬層，其係被接合於與上述第1陶瓷層之上述第1配線層之接合面相反之面，各第1陶瓷層在任一的上述P型熱電轉換元件和上述N型熱電轉換元件之間分離，上述第1配線層跨越上述第1陶瓷層彼此之間而被形成，同時上述第1熱傳達金屬層跨越相鄰的兩第1配線層之間而被形成，並且跨越相鄰的兩第1陶瓷層之間而被形成，上述第1陶瓷層係藉由上述第1配線層或上述第1熱傳達金屬層中之任一者而被連結。 A thermoelectric conversion module comprising: a plurality of thermoelectric conversion elements, which are composed of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements with different linear expansion coefficients; and a first wiring substrate arranged on the plurality of thermoelectric conversion elements. On one end side of the element, the first wiring board has: a plurality of first wiring layers in which the adjacent P-type thermoelectric conversion elements and the N-type thermoelectric conversion elements are joined in a connected state; and a first ceramic layer, which is It is bonded to the surface opposite to the bonding surface of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element of the first wiring layer, and is separated into a plurality of; and a plurality of first heat transfer metal layers, which are bonded to The surface opposite to the bonding surface of the first wiring layer of the first ceramic layer, each first ceramic layer is separated between any one of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element, and the first wiring layer spans The first ceramic layers are formed between each other, and the first heat transfer metal layer is formed to span between two adjacent first wiring layers, and is also formed to span between two adjacent first ceramic layers. The said 1st ceramic layer is connected by any one of the said 1st wiring layer or the said 1st heat transfer metal layer. 如請求項1所載之熱電轉換模組，其中上述第1陶瓷層獨立形成在每個上述熱電轉換元件。 The thermoelectric conversion module as set forth in claim 1, wherein the first ceramic layer is independently formed on each of the thermoelectric conversion elements. 如請求項1所載之熱電轉換模組，其中具有被配設在上述熱電轉換元件之另一端側的第2配線基板，經由被相向配置之上述第1配線基板和上述第2配線基板而電性串聯連接上述P型熱電轉換元件和上述N型熱電轉換元件。 The thermoelectric conversion module as set forth in claim 1, further comprising a second wiring board arranged on the other end side of the thermoelectric conversion element, and the electrical circuit is electrically connected via the first wiring board and the second wiring board which are arranged to face each other. The P-type thermoelectric conversion element and the N-type thermoelectric conversion element are connected in series. 如請求項3所載之熱電轉換模組，其中上述第2配線基板具有：第2配線層，其係接合有相鄰的上述P型熱電轉換元件和上述N型熱電轉換元件；和第2陶瓷層，其係被接合於與該第2配線層之上述P型熱電轉換元件和上述N型熱電轉換元件之接合面相反之面，且被分離成複數，各第2陶瓷層在任一的上述P型熱電轉換元件和上述N型熱電轉換元件之間分離。 The thermoelectric conversion module as set forth in claim 3, wherein the second wiring substrate has: a second wiring layer to which the adjacent P-type thermoelectric conversion elements and the N-type thermoelectric conversion elements are bonded; and a second ceramic layer, which is bonded to the surface opposite to the bonding surface of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element of the second wiring layer, and is separated into plural numbers, and each second ceramic layer is in any of the above-mentioned P type thermoelectric conversion element and the above-mentioned N-type thermoelectric conversion element are separated. 一種熱電轉換模組之製造方法，具有：切割線形成工程，其係將用以從陶瓷母材分割複數第1陶瓷層之切割線形成在該陶瓷母材；金屬層形成工程，其係於上述切割線形成工程後，在上述陶瓷母材之一方之面，形成跨越藉由上述切割線被區劃的複數第1陶瓷層形成區域中之鄰接的兩第1陶瓷層形成區域的第1配線層；分割工程，其係於上述金屬層形成工程後，沿著上述 切割線分割形成有上述第1配線層之上述陶瓷母材，形成接合有上述第1配線層和上述第1陶瓷層的第1配線基板；及接合工程，其係於上述分割工程後，在與上述第1配線層之各第1陶瓷層之接合面相反之面，接合線膨脹係數不同的P型熱電轉換元件和N型熱電轉換元件，製造串聯連接上述P型熱電轉換元件和上述N型熱電轉換元件之熱電轉換模組。 A method of manufacturing a thermoelectric conversion module, comprising: a cutting line forming process of forming a cutting line for dividing a plurality of first ceramic layers from a ceramic base material on the ceramic base material; and a metal layer forming process, which is described above After the dicing line forming process, on one of the surfaces of the ceramic base material, a first wiring layer is formed that spans two adjacent first ceramic layer forming regions among the plurality of first ceramic layer forming regions partitioned by the dicing lines; A division process, which is performed after the above-mentioned metal layer formation process, along the above-mentioned A dicing line divides the ceramic base material on which the first wiring layer is formed to form a first wiring board on which the first wiring layer and the first ceramic layer are joined; and a joining process, which is performed after the dividing process and is connected with A P-type thermoelectric conversion element and an N-type thermoelectric conversion element having different linear expansion coefficients are bonded to the opposite surfaces of the bonding surfaces of the first ceramic layers of the first wiring layer, and the P-type thermoelectric conversion element and the N-type thermoelectric conversion element are connected in series to manufacture Thermoelectric conversion module of conversion element. 如請求項5所載之熱電轉換模組之製造方法，其中上述接合工程被設成先在被相向配置的一組加壓板之間，配置分別重疊上述第1配線基板之上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之挾持體，藉由在其疊層方向加壓該挾持體之狀態下加熱該挾持體，分別接合上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之工程，在上述接合工程中，先在上述P型電轉換元件和上述N型熱電轉換元件之中，至少線膨脹係數小之一方之熱電轉換元件和上述加壓板之間，配置補足構件，先使在上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之接合時的上述一方之熱電轉換元件及上述補足構件之高度和上述另一方之熱電轉換元件及上述補足構件之高度的差，小於上述一方之熱電轉換元件之高 度和上述另一方之熱電轉換元件之高度的差。 The method for manufacturing a thermoelectric conversion module as set forth in claim 5, wherein the bonding process is performed by first disposing the first wiring layers overlapping the first wiring substrates between a set of pressure plates arranged opposite to each other and the holding body of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element, by heating the holding body in a state where the holding body is pressed in the lamination direction, the first wiring layer and the P-type thermoelectric conversion element are respectively bonded. The conversion element and the above-mentioned N-type thermoelectric conversion element process, in the above-mentioned bonding process, first among the above-mentioned P-type electric conversion element and the above-mentioned N-type thermoelectric conversion element, at least the thermoelectric conversion element of which the coefficient of linear expansion is smaller and the above-mentioned thermoelectric conversion element. Between the pressing plates, a supplementary member is arranged, and the height of the above-mentioned one thermoelectric conversion element and the above-mentioned supplementary member during the bonding of the above-mentioned first wiring layer, the above-mentioned P-type thermoelectric conversion element and the above-mentioned N-type thermoelectric conversion element and the above-mentioned other. The difference between the heights of the one thermoelectric conversion element and the above-mentioned complementary member is smaller than the height of the above-mentioned one thermoelectric conversion element The difference between the degree and the height of the other thermoelectric conversion element mentioned above. 如請求項5所載之熱電轉換模組之製造方法，其中上述接合工程被設成先在被相向配置的一組加壓板之間，配置分別重疊上述第1配線基板之上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之挾持體，藉由在其疊層方向加壓該挾持體之狀態下加熱該挾持體，分別接合上述第1配線層和上述P型熱電轉換元件及上述N型熱電轉換元件之工程，在上述接合工程中，在上述疊層方向重疊配置複數個上述挾持體，並且在上述疊層方向配置同數量上述P型熱電轉換元件和上述N型熱電轉換元件。 The method for manufacturing a thermoelectric conversion module as set forth in claim 5, wherein the bonding process is performed by first disposing the first wiring layers overlapping the first wiring substrates between a set of pressure plates arranged opposite to each other and the holding body of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element, by heating the holding body in a state where the holding body is pressed in the lamination direction, the first wiring layer and the P-type thermoelectric conversion element are respectively bonded. The conversion element and the process of the above-mentioned N-type thermoelectric conversion element, in the above-mentioned bonding process, a plurality of the above-mentioned clamping bodies are arranged in a stacking direction in the above-mentioned lamination direction, and the same number of the above-mentioned P-type thermoelectric conversion elements and the above-mentioned N-type thermoelectric conversion elements are arranged in the above-mentioned lamination direction. Thermoelectric conversion element. 如請求項5所載之熱電轉換模組之製造方法，其中上述金屬層形成工程被設成在上述陶瓷母材之上述一方之面形成複數上述第1配線層，並且在上述陶瓷母材之另一方之面形成第1熱傳達金屬層的工程，在上述金屬層形成工程中，將上述第1熱傳達金屬層，形成跨越相鄰之兩第1配線層之間，並且形成跨越相鄰的兩第1陶瓷層形成區域之間。 The method for manufacturing a thermoelectric conversion module as set forth in claim 5, wherein the metal layer forming process is configured to form a plurality of the first wiring layers on the one side of the ceramic base material, and to form a plurality of the first wiring layers on the other side of the ceramic base material. On the one hand, in the process of forming the first heat transfer metal layer, in the metal layer forming process, the first heat transfer metal layer is formed so as to span between two adjacent first wiring layers and to span two adjacent first wiring layers. between the regions where the first ceramic layer is formed. 如請求項5所載之熱電轉換模組之製造方法，其中在上述切割線形成工程中，上述切割線形成在上述陶瓷母材之一方之面中除上述第1配線層之接合預定區域之外的非接合部。 The method for producing a thermoelectric conversion module as set forth in claim 5, wherein in the dicing line forming process, the dicing line is formed on one of the surfaces of the ceramic base material excluding the region where the first wiring layer is to be joined of the non-joint part. 如請求項8所載之熱電轉換模組之製造方法，其中在上述切割線形成工程中，上述切割線形成在上述陶瓷母材之另一方之面中除上述第1配線層之接合預定區域之外的非接合部。 The method for manufacturing a thermoelectric conversion module as set forth in claim 8, wherein in the step of forming the dicing line, the dicing line is formed on the other surface of the ceramic base material except for the region where the first wiring layer is to be joined. outside the non-joint part. 如請求項5所載之熱電轉換模組之製造方法，其中在上述切割線形成工程中，上述切割線係以貫通上述陶瓷母材之相向的邊彼此之直線而形成。 The method of manufacturing a thermoelectric conversion module according to claim 5, wherein in the cutting line forming process, the cutting line is formed as a straight line penetrating the opposing sides of the ceramic base material.
TW107107565A 2017-03-08 2018-03-07 Thermoelectric conversion module and its manufacturing method TWI758431B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017043487 2017-03-08
JP2017-043487 2017-03-08
JP2017-163484 2017-08-28
JP2017163484A JP6933055B2 (en) 2017-03-08 2017-08-28 Thermoelectric conversion module and its manufacturing method

Publications (2)

Publication Number Publication Date
TW201843849A TW201843849A (en) 2018-12-16
TWI758431B true TWI758431B (en) 2022-03-21

Family

ID=63448125

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107107565A TWI758431B (en) 2017-03-08 2018-03-07 Thermoelectric conversion module and its manufacturing method

Country Status (2)

Country Link
TW (1) TWI758431B (en)
WO (1) WO2018163958A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2931217B2 (en) * 2021-06-18 2024-01-03 Univ Madrid Autonoma THERMOELECTRIC DEVICE AND GENERATOR

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000068564A (en) * 1998-08-18 2000-03-03 Dainippon Screen Mfg Co Ltd Peltier element
JP2008244100A (en) * 2007-03-27 2008-10-09 Yamaha Corp Thermoelectric module and manufacturing method thereof
JP2016029695A (en) * 2014-07-25 2016-03-03 日立化成株式会社 Thermoelectric conversion module and manufacturing method for the same
TW201624779A (en) * 2014-12-23 2016-07-01 財團法人工業技術研究院 Thermoelectric Conversion apparatus application system thereof
JP2017034135A (en) * 2015-08-03 2017-02-09 日立化成株式会社 Thermoelectric conversion module and manufacturing method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55110886A (en) 1979-02-19 1980-08-26 Tokico Ltd Heat transfer device
JP2007103580A (en) 2005-10-03 2007-04-19 Toyota Motor Corp Thermoelectric transducer and method of manufacturing same
JP5159264B2 (en) * 2007-11-15 2013-03-06 株式会社東芝 Thermoelectric device and thermoelectric module
WO2010010783A1 (en) 2008-07-22 2010-01-28 コニカミノルタホールディングス株式会社 Thermoelectric conversion element
JP2017043487A (en) 2015-08-28 2017-03-02 京セラドキュメントソリューションズ株式会社 Image formation apparatus
JP2017163484A (en) 2016-03-11 2017-09-14 株式会社沖データ Image reader and image reading system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000068564A (en) * 1998-08-18 2000-03-03 Dainippon Screen Mfg Co Ltd Peltier element
JP2008244100A (en) * 2007-03-27 2008-10-09 Yamaha Corp Thermoelectric module and manufacturing method thereof
JP2016029695A (en) * 2014-07-25 2016-03-03 日立化成株式会社 Thermoelectric conversion module and manufacturing method for the same
TW201624779A (en) * 2014-12-23 2016-07-01 財團法人工業技術研究院 Thermoelectric Conversion apparatus application system thereof
JP2017034135A (en) * 2015-08-03 2017-02-09 日立化成株式会社 Thermoelectric conversion module and manufacturing method thereof

Also Published As

Publication number Publication date
TW201843849A (en) 2018-12-16
WO2018163958A1 (en) 2018-09-13

Similar Documents

Publication Publication Date Title
KR102300972B1 (en) Substrate unit for power modules, and power module
JP6750404B2 (en) Thermoelectric conversion module, thermoelectric conversion device, and method for manufacturing thermoelectric conversion module
JP4768961B2 (en) Thermoelectric module having thin film substrate
US9257627B2 (en) Method and structure for thermoelectric unicouple assembly
US20110146741A1 (en) Thermoelectric conversion module and method for making the same
JP5065077B2 (en) Thermoelectric generator
EP3166140B1 (en) Substrate unit for power modules, and power module
RU2546830C2 (en) Thermoelectric element
US20140182644A1 (en) Structures and methods for multi-leg package thermoelectric devices
US20110298080A1 (en) Method for manufacturing thermoelectric conversion module, and thermoelectric conversion module
US20080245397A1 (en) System and Method of Manufacturing Thermoelectric Devices
JP2010165840A (en) Thermoelectric conversion module and thermoelectric conversion module block
JP6507745B2 (en) Thermoelectric conversion module
CN111433923A (en) Insulating heat transfer substrate, thermoelectric conversion module, and method for manufacturing insulating heat transfer substrate
TWI758431B (en) Thermoelectric conversion module and its manufacturing method
JP5772088B2 (en) Power module substrate manufacturing method and power module substrate
JP2008109054A (en) Thermoelectric conversion module and method for manufacturing the same
JP6850988B2 (en) Thermoelectric conversion module
JP6933055B2 (en) Thermoelectric conversion module and its manufacturing method
JP2016167503A (en) Power module substrate with heat sink and power module
JP2021022712A (en) Thermoelectric module and manufacturing method of thermoelectric module
JP4124150B2 (en) Thermoelectric module manufacturing method
JP2022052577A (en) Thermoelectric module and manufacturing method thereof
KR102623077B1 (en) Thermoelectric device and method of fabricating the same
JP2003234515A (en) Thermoelectric module