TW200406897A - Power surface mount light emitting die package - Google Patents

Power surface mount light emitting die package Download PDF

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Publication number
TW200406897A
TW200406897A TW092123988A TW92123988A TW200406897A TW 200406897 A TW200406897 A TW 200406897A TW 092123988 A TW092123988 A TW 092123988A TW 92123988 A TW92123988 A TW 92123988A TW 200406897 A TW200406897 A TW 200406897A
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Taiwan
Prior art keywords
die package
light
emitting die
light emitting
substrate
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TW092123988A
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English (en)
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TWI331380B (en
Inventor
Ban P Loh
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Cree Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/642Heat extraction or cooling elements characterized by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0201Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203Cooling of mounted components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007Types of components
    • H05K2201/10106Light emitting diode [LED]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
  • Knives (AREA)

Description

200406897 玖、發明說明: 【發明所屬之技術領域】 本申請案主張2002年9月4曰申請之美國臨時專利申請案 第60/408,254號之權利,該案之標題為具雙散熱體及一光學 系統或化學塗佈之透鏡。 【先前技術】 本發明係關於半導體元件封裝之領域,特別是關於發光二 極體之封裝。 通常,發光二極體係封裝於引線架封裝(leadframe package)之内,而該引線架封裝通常包含一密封該發光二極 體之鑄模或射出成型的塑膠主體、一透鏡及用以連接發光二 極體並向外延伸至該主體之細線引腳㈣)。引線架封裝之 引腳係作為提供發光二極體電能之導管,同冑,也可以告作 發光二極體之散熱用。該熱能係由發光二極體於外部力^壓 後發光所產生。而-部分延伸自封裝主體㈣腳収為了連 接該引線架封裝之外部電路。 由發光二極體產生的熱一部分是藉由塑膠之封裝主體散 熱’但是,大部分的熱是藉由封裝之金屬部分散掉。通常, 引腳非常細且有一小截面,因此,盆 〜田 政…、之各罝相當有限。 如此便限制了提供給發光二極體 二極體產生的光強度。 力革進而限制了由發光 在-發光二極體的封裝設計令為了增加其散熱容量,合導 入-散熱器(heat sink)。該散熱器將發 二 走,因此可以增加發光-極㈣壯 ㈣日日片的熱帶 極_之散熱容量。然而該設計 87588 200406897 也會導入封裝内的額外空間以填入密封材料來保護發光二 和體曰曰片。此外,由於發光二極體封裝内之不同元件間的熱 胗脹係數(Coefflcient of Thermal Expansi〇n ; CTE)之明顯差 異所致,在密封材料内容易產生氣泡或從發光二極體封裝内 之不同部分剝離,這樣會對發光品質及產品的可靠度有不良 的&響。而且該設計包含一對脆弱之引腳,該引腳通常以熱 鐵=〇t-lron)鑄銲;然而,該製造方法卻與現今流行於電路板 、、且衣項域裡的表面黏著(surface m〇unt)技術互不相容。 在另一發光二極體封裝的設計中,引線架封裝之引腳有不 同的厚度,以各種形狀及構造延伸於發光二極體封裝之主體 邊f前。一較厚之引腳可以作為散熱器,並黏著於發光二極 體曰曰片上。这樣的安排可以使產生自發光二極體晶片的熱經 由連接於外部之散熱器之該較厚引腳散逸掉。然而,該設計 ^於塑膠主體與引線架材料間之熱膨脹係數的差異而造成 可罪度不良。當工作於溫度循環(temperature。八16)時,附著 =引腳之硬塑膠主體會承受不同方向之高度的熱應力,因而 導致不欲發生的結果,諸如塑膠主體破裂、塑膠主體從發光 二極體晶片脫離、銲線斷裂、塑膠主體從不同部分之接面剝 離或是各種可能之組合。此外,延長之引腳將增加封裝的尺 寸及其足印(footprint)。基於上述理由,很難將發光二極體 晶片以高密度方式佈置於印刷電路板上以產生較亮之光線。 曰目前引線架封裝設計的另一個缺點即是厚弓丨腳無法以覆 晶(Flip-Chip)方式黏著於發光二極體之微小電路上,而該覆 晶技術正受到以製造成本導向及元件性能為考量之製造商 87588 200406897 的廣泛使用。 因此,目前正產生一種需求以克服或減少習知技藝之一到 多項缺點之改良式的發光二極體封裝。 【發明内容】 本發明即符合上述之需求,本發明具體實施例係提供一種 用於如發光二極體之半導體晶粒的封裝。該封裝包含·· 一含 有佈線之基板,該等佈線係透過黏著墊片連接至發光二極 體,反光板,該反光板連接於該基板,並圍繞於該黏著墊 片四周;以及主要覆蓋於黏著墊片之透鏡。 邏^ 本毛明之其它具體實施例係提供一種包含一底部散熱器 及頂。P散熱|§之半導體晶粒的封裝,並且在該底部散熱器 之上表面有佈線。半導體晶片則黏著於該底部散熱器之上表 面’並電氣連接於該等佈線。該頂部散熱器則耦合至該底部 散熱器。 由下列之詳細描述中明顯看出本發明之其他實施方式及 其優點。 【實施方式】 本發明藉由圖1至圖6D★装“ > 口⑴坪細祝明之,並揭示各種實施例。 附圖所示之各層或區域 场1之大小s為清楚表示而誇大,因此僅 :為本發明之—般結構^意用。另外,會引用「在一基板、 ^他層或其他結構上形成—層結構」來說財發明的各項觀 …、占。如熟悉此項技術者所知 ^ & 坏知,引用在另一層或基板「上」形 成一層預期其他層可介於^ ,^ α 、/、間。在本文中會引用「直接在層 或基板上」來表示在另一 層或基板上」形成一層且介於其 87588 -9- 200406897 間'中間層。另外,本文中會使用如「位於下方」之類的相 對用巧來描述如圖所示之層或區域間的關係。應明白,這些 用詞預定包含如圖所示的方向以及裝置的不同方位。例如^ 如果將圖中的裝置倒置’則描述為「位於其他層或區域下方」 的層或區域會疋向為「位於其他層或區域上方」。用詞「位 於下方」預包含此狀況的「上方」及「下方」。整份附圖中, 相似的參考數字表示相似的元件。 如附圖所示僅供示意之參考,因此本發明之各實施例以一 種發光晶粒封裝為例’該發光晶粒封裝包含:一含有佈線之 底部散熱器(基板)’該等佈線係透過黏著墊片連接至發光二 極體^ 一環繞於黏著墊片之頂部散熱器(反光板);及一覆蓋 於黏著墊片之透鏡’據本發明之部份實施例,該晶粒封裝 包含兩散熱器:-為作為黏著用之基板的底部散熱器(其另 ::途為散熱二為作為發光二極體導光用之反光板的頂 $放熱器(其另一用途亦為散熱)。由於該底部與頂部散熱器 皆可將發光二極體產生的熱導掉,因此可將較多功率傳遞至 發光二極體以產生更多的光。 進v w兒明,在本發明中,該晶粒封裝本身彷彿是一個散 熱器,因此本發明之發光晶粒封裝不需要另外的散熱金屬或 引線延伸於該封裝外部。基於上述理由,本發明之發光晶粒 封驶相較於習知技藝得以有體積較小、可靠度較佳及成本較 低之製造優勢。 圖1A係本發明其中之一實施例的發光晶粒封裝1 〇之立體 圖,以及圖1B為圖1A之分解剖視圖。如圖1A及圖1B所示, 87588 200406897 本發明之發光晶粒封裝1 0包含一底部散熱器20、一頂部散熱 器40及一透鏡50。 該底部散熱器20可由圖2Α至圖2D得到更詳細之揭示。圖 2Α、2Β、2C及2D分別為底部散熱器20之仰視圖、側視圖、 前視圖及俯視圖。圖2C除了顯示該底部散熱器20之前視圖以 外’還顯示一發光二極體組裝(light emitting diode assembly)60置於該底部散熱器20之上方。該發光二極體組裝 60亦顯示於圖1B。如圖1A至圖2D所示,底部散熱器2〇承載 電氣佈線(electrical trace)22 及 24 ;焊錫墊片(s〇ldering pad)26、32及34 ;以及發光二極體組裝6〇。基於上述理由, 該底部散熱器20亦可作為基板20。為了避免圖中標示混亂, 僅有焊錫墊片26、32及34標示參考數值。可使用習知材料來 製造電氣佈線22和24以及焊錫墊片32、34和36。此外,額外 的電氣佈線及連接亦可於基板20或其内層之上面、侧面或底 部實施。該等佈線22及24、焊錫墊片32、34及36,以及任意 之連接線皆可透過習知之方法任意組合而彼此相互連接,例 如導通孔。 該基板2 0係由高熱傳導但電氣絕緣之材料所製成’例如氣 化鋁(AlUminum Nitride)或氧化鋁(Alumina)。其尺寸可根據 應用及製造該晶粒封裝之方法而有寬廣的變化,例如在所揭 示之實施例中’可以從幾分之毫米到幾十毫米。雖然本發明 未局限於—特定尺寸,但附圖之晶粒封裝1〇所標示之尺寸僅 為-特定實施例。所有附圖内之長、寬、高及半徑均以毫米 為長度單位,而以徑度為角度單位,但於附圖及說明查k 87588 200406897 例外則不在此限。 於所揭示之實施例中,基板20具有一包含佈線22及24之頂 部表面21。該等佈線22及24提供從銲錫墊片( ' 塾片26)至黏著塾片28之電氣連接。該頂部薛錫塾片 基板20之侧邊的佈線22及24之一部分,i且電氣連接至側邊 之辉錫墊片32。該黏著墊片28係為發光二極體組裝之黏著 處的頂部表面之一部分,包含佈線22、佈線24或兩者的一部 分。其位置通常靠近頂部表面21之中心處。本發明之另一實 施例係使用其他之半導體電路或晶片來取代發光二極體2 裝60。 佈線22及24係提供電氣路線,使發光二極體組裝6〇與焊錫 墊片26、32及34連接在一起。因此,部分佈線稱為第一佈線 22 ,而部分稱為第二佈線24。在所揭示之實施例中,黏著墊 片28包含第一佈線22及第二佈線24之多個部分。如範例所 示,發光一極體組裝60放置於與第一佈線22共接之黏著塾片 28上,其頂部透過一引線(b〇nding wire)62與第二佈線以相 接。根據該發光二極體組裝60之結構與方向,第一佈線。係 作為正極連接,而第二佈線24則為發光二極體組裝6〇之負極 連接(或為相反)。 發光二極體組裝60可以包含額外之元件,如圖1B及圖2C 所示,發光二極體組装60包含一引線62、一發光二極體次組 裝(light emitting diode subassembly)64及一發光二極體 66 〇 該發光二極體次組裝64為該領域之習知技藝,在此僅作為說 明本發明之參考用途,並不以此而限制本發明。在附圖中, 87588 -12- 200406897 發光二極體組裝60以晶粒貼附(dieattach)於基板2〇上。而在 不同的實施例中’黏著墊片28則可以允許發光二極體組裝60 為覆晶貼附(fllp_chip attach)。此外,多個發光二極體組裝亦 可黏著於該黏著墊片28上。在不同的實施例中,發光二極體 組裝60可以黏著於多條佈線上,此例即為覆晶技術之應用。 佈線22及24之拓樸形狀(t〇p〇i〇gy)可以在附圖之說明中寬 廣地、k化’而不脫離本發明所涵蓋之範疇。在附圖中,三個 分開之陰極(負極)佈線24顯示將三個發光二極體組裝6〇放置 於黏著墊片28上面,並各自連接於不同的陰極(負極)佈線, 而得以個別電氣控制該等三個發光二極體組裝6〇。該等佈線 22及24係由導電材料製成,諸如金、銀、錫或其他金屬等。 該等佈線22及24具有如圖所示之尺寸,並且其厚度依不同之 應用可以為毫米之數量級或數十毫米,例如,該厚度為。毫 米。圖1A及圖2A標示一方向記號27,該記號作為分辨晶粒 封裝1〇(即使是在組裝後)之適當的方向,並且非為一接觸窗 或導通孔。而所示之佈線22及24可以自黏著墊片28延伸至基 板20之邊緣。 由圖1A至圖2D進一步得知,基板2〇定義了半圓柱空間23 及相鄰於其旁之四分之一圓柱空間25。附圖中為了避免標示 混亂,僅以參考數字代表之。該半圓柱空間23及四分之一圓 柱空間25提供了銲錫流動空間,使晶粒封裝1〇貼附於一印刷 電路板或以該晶粒封裝10為其一元件之其他裝置(未標示)有 銲錫性。此外,半圓柱空間23及四分之一圓柱空間h也提供 了於生產製造時方便的定位輪廓及斷點。 87588 -13 - 200406897 基板20可以製作成一具有複數個鄰接區段之單片或平板 的一個別區段,每一區段均為基板20之個體。另一種製作方 式為將基板20製作一區段陣列的一個別區段,該陣列具有多 個行列之鄰接區段,而每一區段亦為基板2〇之個體。在該製 作之結構中’半圓柱空間23及四分之一圓柱空間25可以作為 生產時之單片或陣列的治具孔。 此外’該半圓柱空間23及四分之一圓柱空間25結合片與片 間之切割溝槽或蝕刻線,可以幫助從單片、平板或晶圓分離 成單片基板。可藉由雷射、預模(prernold)或剝彎而施與物理 應力於穿孔、切割道或蝕刻線上來完成該分離動作。這些特 性簡化了製造流程而在不需要特殊的治具(fixture)下降低生 產成本。此外,該半圓柱空間23及四分之一圓柱空間25可以 作為導通孔,用以連接頂部焊錫墊片26、側邊焊錫墊片32以 及底部焊錫塾片34。 基板20有一底部表面29,其包含一熱接觸墊片36。該熱接 觸墊片36可以用高熱傳導性及電傳導性之材料製成,例如 金、銀、錫或其他相關材料之金屬。 圖3為圖1A及圖1B之半導體封裝的部分側邊之剖面圖,特 別疋该圖顯不了頂部散熱器4〇及透鏡5〇的部分。參照於圖 1A、圖1B及圖3,該頂部散熱器4〇及係由高熱傳導性之材料 組成,諸如鋁、銅、陶瓷、塑膠、合成物或其組合物等。而 佈線22及24可由一高溫及高機械強度之介電材料塗佈其 上,以始、封该等佈線22及24(除了中央之晶粒貼附區域外)而 提供抗機械及環境之侵害,例如刮傷或氧化。該塗佈製程可 87588 -14- 200406897 以為製作基板步驟之一,並且作為基板2〇與頂部散熱器4〇之 絕緣用。甚至再覆蓋一層高溫吸附材料,如熱介面材料 THERMOSET ’使基板2〇黏貼於頂部散熱器4〇。 頂部散熱器40包含一主要圍繞於黏著衣(圖2A及圖2C之) 黏著墊片28上之發光二極體組裝6〇之反光表面42。當頂部散 熱裔40用於散逸晶粒封裝丨〇内之發光二極體所產生的熱 時,其可以上方附著或銲接接合方式直接外接一散熱器,使 散熱更有效率。在另一實施例中,如果必須以一可壓縮 (compressible)或非壓縮(n〇n-c〇mpressible)之介質(如空氣或 冷部流質)來散逸熱量,該頂部散熱器4〇可以裝置冷卻風扇 或者使用加強該頂部散熱器4〇與冷卻流質間熱轉移之任意 方法。在上述之兩實施例中,電氣端子與晶粒封1〇之底部散 熱器20仍然可以透過一般之表面黏著技術來連接於印刷電 路板上。 發光二極體組裝60之部分光源被反光表面42所反射,如示 意之光線63 ;而其他部份則不會被反光表面“所反射,如示 意之光線61。為了使光線有效率反射,反光表面“經常使用 有拋光、鑄造、模鑄或其他任意組合之材料。另一種達到高 反射率之方法,係將反光表面42或頂部散熱器40全部電鍍或 沈積高反光材料,例如銀、鋁或可以達到該目的之任意材 料基於上述理由,頂部散熱器40也被當作成反光板4〇。該 反光板40可依晶粒封裝1〇所需之熱效能而使用高熱傳導性 之材料如只施例所示,反光表面42為一平坦表面,並與反 光片水平面成45。失角。本發明並不限於該實施例,例如: 87588 -15- 200406897 反光表面42與反光片水平面可以為不同之夾角;另一方面, 反光片可以為拋物面、超環面(toroid)或符合封裝照度性能之 任意形狀。 反光板40可包含一支架44,作為支撐及耦合透鏡50之用。 而發光二極體組襞60則使用密封材料46,例如僅以軟而有彈 性之矽材或聚合物為例,來密封於(圖1A及圖工…晶粒封裝⑺ 之内°亥氆封材料46為尚溫之聚合物較佳,並具高光穿透性 及接近或非常接近透鏡5〇之折射係數,其以不受大部分光波 改變其光穿透性及清晰度之特性為較佳。 透鏡50係為高光穿透性之材料,諸如玻璃、石英、高溫高 透明之塑膠或是其組合物等。該透鏡5〇係附著於密封材 之上,但不堅固地黏著於反光板4〇。該“浮動式,,設計為確保 密封材料46可以在高、低溫的條件下伸縮無虞。例如當晶粒 封裝10工作於高溫環境時,密封材料46經歷了比包含其内之 腔空間(cavity space)更大的體膨脹。藉由允許透鏡5〇可以些 許自由地浮動於密封材料46之頂部,否則並無多餘之资封材 料可以自腔空間擠出;反之,若晶粒封裝丨吐作於低溫環境 時’該密封材料46比構成腔空間之其他元件容易收縮,使透 鏡5〇於隨後之收縮並造成高度下降而自由地浮動於密封材 枓46之頂部。因此’晶粒封裝10之可靠度藉由浮動透鏡的設 计而降低密封材料46的熱應力,並維持—㈣寬廣的溫度範 圍。 又 形 在某些實施例中,透鏡50定義 狀之内凹槽52,其功用係填入 了一具有曲線、半圓或其他 一些光學材料以影響或改變 87588 -16- 200406897 發光一極體光線離開晶粒封裝1 〇前之特性。這些光學材料可 以為冷光轉換磷(luminescence COnverting ph〇sph〇r)、染料、 螢光聚合物或可以吸收晶片光線並再輻射不同波長之其他 材料,也可以為光擴散材料,如鈣碳化物、散射粒子(如鈦 氧化物)或是可以色散(disperse)與散射(scatter)光線之孔 洞。上述之一種或是其組合物皆可運用於透鏡,以提升其照 度之性能。 圖4顯不晶粒封裝1〇耦合至一外部散熱器7〇,且圖中之熱 接觸塾片36以環氧樹脂、銲鍚或其他任意之熱傳導附著 (thermally conductive adhesion)、電傳導附著或熱、電傳導 附著物74,貼於該外散熱器7〇。該外散熱器7〇可以為印刷電 路板或是其他可以將晶粒封裝10的熱量散出之結構,包含電 路元件(未顯示出)或不同構造之散熱鰭狀物。 本發明之一相當不同的構造之實施例,如圖5至圖所 不,其中有部分與揭示於圖1A至圖4之實施例的對應部分相 似。為了方便起見,圖5至圖6D之部分編號與圖1A至圖4之 對應部分的編號一致,類似但已改變之部分用相同編號但附 一 “a”字於其後,而不同部分則用不一樣的編號。 圖5為相應於本發明其他實施例之發光晶粒封裝i〇a的分 解示意圖。如圖5所示,該發光晶粒封裝l〇a包含一底部散熱 器20a、一頂部散熱器40a及一透鏡50。 圖6A、6B、6C及6D分別提供侧視圖、前視圖及圖5之基板 2(^的俯視圖。參照圖5至圖6D,該基板20a包含一第一佈線 22a及四第二佈線24a。該等佈線22a及24a與圖2 A之佈線22及 87588 -17- 200406897 24有走線上的不同。基板20a包含凸緣31,該凸緣31定義了 閂鎖空間(latch Space)33,作為接納反光板4〇a與基板2〇a相 嗜合之站腳35。 如前所述,本發明明顯具新穎性及提供相較於目前技藝之 優點。且上述之本發明的實施方式並不侷限於所揭示之特定 形式或組合,諸如不同的結構組成、尺寸大小及材料等,皆 可運用於本發明。本發明僅受限於如下之申請專利範圍。 【圖式簡單說明】 圖1A係根據本發明其中之一實施例的半導體晶粒封裝之 立體圖; ^ 圖1B為圖1A之分解圖; 圖2 A為圖1A之部分仰視圖; 圖2B為圖1A之部分侧視圖; 圖2C為圖1A之部分前視圖; 圖2D為圖1 a之部分俯視圖; 圖3為圖1A之部分剖面圖; 圖4為圖1A增加額外元件之側視圖; 圖5係根據本發明其中之另一實施例的半導體晶粒封穿 分解圖; 衣之 圖6A為圖5之部分仰視圖; 圖6B為圖5之部分側視圖; 圖6C為圖5之部分前視圖;以及 圖6D為圖5之部分俯視圖。 【圖式代表符號說明】 87588 -18 - 200406897 10 晶粒封裝 20,20a 底部散熱器/基板 21 頂部表面 22,22a,24,24a (電氣)佈線 23 半圓柱空間 25 四分之一圓柱空間 26 頂部焊錫墊片 27 方向記號 28 黏著墊片 29 底部表面 31 凸緣 32 側邊焊錫墊片 33 閂鎖空間 34 底部焊錫墊片 35 站腳 36 熱接觸墊片 40,40a 頂部散熱器/反光板 42 反光表面 44 支架 46 密封材料 50 透鏡 52 内凹槽 60 發光二極體組裝 61,63 光線 -19- 87588 200406897 62 引線 64 發光二極體次組裝 66 發光二極體 70 外部散熱器 72 散熱鰭狀物 74 熱、電傳導附著物 87588 -20-

Claims (1)

  1. 200406897 拾、申請專利範圍: 1 · 一種發光晶粒封裝,包含: 一具有佈線之基板,係用於連接一發光二極體組裝 (light emitting diode assembly)於一黏著墊片上; 一反光板,其耦合至該基板並實質上環繞於該黏著墊 片;以及 一透鏡,覆蓋於該黏著墊片上。 2 ·如申請專利範圍第1項之發光晶粒封裝,進一步包含一 發光二極體,其黏著於該基板及連接於該基板之佈線。 3 ·如申請專利範圍第2項之發光晶粒封裝,其中該發光二 極體密封於透明聚合物内。 4 ·如申請專利範圍第1項之發光晶粒封裝,其中該基板包 含具高熱傳導性之電氣絕緣材料。 5 ·如申請專利範圍第1項之發光晶粒封裝,其中該基板包 含熱傳導材料。 6·如申請專利範圍第1項之發光晶粒封裝,進一步包含一 耦合於該基板之外部散熱器。 7·如申請專利範圍第7項之發光晶粒封裝,其中該基板包 含一電鑛之底部金屬層,用以耦合該外部散熱器。 8.如申請專利範圍第1項之發光晶粒封裝,其中至少有一 佈線自從黏著墊片延伸至該基板之一侧。 9·如申請專利範圍第1項之發光晶粒封裝,其中該基板包 含至少一側邊之凸緣,用以嚙合該反光板。 10·如申請專利範圍第1項之發光晶粒封裝,其中該反光板 87588 200406897 主要環繞於該黏著墊片。 11. 12. 13. 14. 15. 16. 17. 18. 19, 20. 如申請專利範圍第1項之發光晶粒封裝,其中該反光板 定義一反光表面。 如申請專利範圍第1項之發光晶粒封裝,其中該反光板 包含南熱傳導之材料。 如申請專利範圍第丨項之發光晶粒封裝,其中該反光板 包含至少一站腳,用於機械嚙合於該基板並增加熱傳導。 如申請專利範圍第丨項之發光晶粒封裝,其中該反光板 連接於一外部散熱器,用以散逸該封裝之熱量。 如申請專利範圍第i項之發光晶粒封裝,其中該反光板 包含散熱用之冷卻鰭狀物。 如申請專利範圍第1項之發光晶粒封裝,其中該透鏡包 δ 内凹槽’用以填入光學化學物(optical chemicals)。 如申請專利範圍第1項之發光晶粒封裝,其中該透鏡包 含冷光轉換磷。 如申請專利範圍第1項之發光晶粒封裝,其中該透鏡包 含擴散物。 如申請專利範圍第1項之發光晶粒封裝,其中該透鏡包 含磷。 一種發光晶粒封裝,包含·· 一底部散熱器,於其上表面具有佈線; 一黏著於該底部散熱器之上表面的半導體晶片,該半 導體晶片電氣連接於該底部散熱器之佈線上;以及 一機械耦合於該底部散熱器之頂部散熱器。 87588 200406897 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 如申請專利範圍第20項之發光晶粒封裝,進一步包含 一發光二極體,其黏著於該基板並連接於該基板之佈 線。 如申請專利範圍第21項之發光晶粒封裝,其中該發光 二極體被密封著。 如申請專利範圍第20項之發光晶粒封裝,其中該基板 包含高傳熱性之電氣絕緣材料。 如申請專利範圍第20項之發光晶粒封裝,進一步包含 一耦合於該基板之外部散熱器。 如申請專利範圍第24項之發光晶粒封裝,其中該基板 有一帶有熱接觸墊片之底部散熱器,透過該熱接觸墊片 耦合至外部散熱器。 如申請專利範圍第20項之發光晶粒封裝,進一步包含 多個黏著墊片,藉以使發光二極體黏著於該基板上。 如申睛專利範圍第20項之發光晶粒封裝,其中至少一 佈線自該基板之頂部表面延伸至該基板之一側。 如申請專利範圍第20項之發光晶粒封裝,該基板包含 至少一側邊之凸緣,用以嚙合該反光板。 如申請專利範圍第20項之發光晶粒封裝,其中該反光 板主要環繞於該黏著墊片。 如申請專利範圍第20項之發光晶粒封裝,其中該反光 板定義一反光表面。 如申請專利範圍第20項之發光晶粒封裝,其中該反光 板包含高熱傳導之材料。 87588 200406897 32.如申請專利範圍第2〇項之發光晶粒封裝,其中該反光 板包含至少一站腳,用以機械嚙合於該基板並增加散熱 接觸面積。 33 ·如申請專利範圍第2〇項之發光晶粒封裝,其中該站腳 之材料選自一包含玻璃、石英及高溫塑膠之群組。 34.如申請專利範圍第2〇項之發光晶粒封裝,其中該透鏡 包含冷光轉換蛾_。 3 5 ·如申請專利範圍第2〇項之發光晶粒封裝,其中該透鏡 包含光學擴散物。 36. 如申請專利範圍第2〇項之發光晶粒封裝,其中該透鏡 包含磷。 37. 如申請專利範圍第2〇項之發光晶粒封裝,其中該透鏡 放置並附著於密封材料。 38·如申請專利範圍第37項之發光晶粒封裝,其中該密封 材料包含彈性材料。 39·如申请專利範圍第2〇項之發光晶粒封裝,其中該透鏡 之材料選自一群組,包含玻璃及石英。 4〇·如申凊專利範圍第20項之發光晶粒封裝,其中該透鏡 包含高透明之塑膠材料。 87588
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