TWI416771B - 發光二極體 - Google Patents
發光二極體 Download PDFInfo
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- TWI416771B TWI416771B TW098133348A TW98133348A TWI416771B TW I416771 B TWI416771 B TW I416771B TW 098133348 A TW098133348 A TW 098133348A TW 98133348 A TW98133348 A TW 98133348A TW I416771 B TWI416771 B TW I416771B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10416—Metallic blocks or heatsinks completely inserted in a PCB
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
- H05K2201/2054—Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics
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Description
本發明係有關於一種發光二極體,特別是指一種發光二極體之封裝結構。
發光二極體之封裝方式包括支架型(lamp type)、基板型(PCB type)以及標準平頂型(PLCC type)。第1圖為習知支架型發光二極體之示意圖,請參閱第1圖,支架型發光二極體10包括透鏡11、支架12a、12b、發光二極體晶片13以及導線14,支架12a上以沖壓方式形成一反射部121,而發光二極體晶片13設置於反射部121中,使發光二極體晶片13產生之光線可充分被向上反射,發光二極體晶片13直接與支架12a電性連接,另透過導線14與支架12b電性連接,而透鏡11則包覆整個發光二極體晶片13。由於支架型發光二極體10可利用沖壓方式形成反射部121,因此反射部121較為光滑,可提供較佳的反射效果。然而,支架型發光二極體10無法將散熱區域獨立,也無法使散熱區域直接連接到外部以加強散熱效果,而在插件(DIP)製程中,支架12a、12b會被彎折與電路板(未圖示)連接,此時,可能產生膠裂的問題。另外,由於支架型發光二極體10必須保留沖壓間隙以及模具間隙,因此無法被密集化地設計。
第2圖為習知基板型發光二極體之示意圖,請參閱第2圖,基板型發光二極體20包括透鏡21、支架22a、22b、發光二極體晶片23、導線24以及電路板25。發光二極體晶片23設於支架22a上,而透過導線24與支架22b電性連接。由於基板型發光二極體20之製程可直接於電路板25上完成,故配置更為密集,另外基板型發光二極體20以切割成形,故沒有折腳膠裂之問題。然而,基板型發光二極體20無法直接於其上沖壓反射部,而必須以其他加工方式設置,因此無法具有光滑平面,反射效率較低。此外,基板型發光二極體20之散熱區域非獨立,也無法直接連接至外部以加強散熱效果。
第3圖為習知標準平頂型發光二極體之示意圖,請參閱第3圖,標準平頂型發光二極體30包括透鏡31、支架32a、32b、發光二極體晶片33、導線34、電路板35以及反射杯36。發光二極體晶片33設於支架32a上,並且透過導線34使發光二極體晶片33與支架32b電性連接。標準平頂型發光二極體30可選用塑膠或反射杯,並且散熱區域係獨立且直接連接至外部以增加散熱效果,另外,標準平頂型發光二極體30係先折腳才進行封裝動作,因此不會有膠裂之問題。然而,標準平頂型發光二極體30必須利用點膠製程,因此無法被密集地設置,另外,由於折腳以及射出困難的關係,標準平頂型發光二極體30無法小型化以及薄型化。
再請參閱中華民國專利第560697號之表面黏著型發光二極體之結構,此習知發光二極體直接將反射杯容置於電路板中,而發光二極體晶片設置於反射杯上,因此,發光二極體之熱量會直接傳遞至反射杯,再經由反射杯導熱至電路板上,使散熱區域無法獨立,而過量的熱能也可能導致電路板的損壞。
本發明提供一種發光二極體,包括發光二極體晶片、透鏡、反射杯、電路連接板、電路基板以及導線。發光二極體晶片設置在反射杯中,而透鏡罩設在反射杯及發光二極體晶片上。發光二極體晶片與電路連接板電性連接,而電路連接板還包括第一穿孔,電路基板還包括第二穿孔,導線設於第一穿孔以及第二穿孔中,並使電路連接板與電路基板電性連接,反射杯設於電路連接板以及電路基板之間,且第一穿孔與第二穿孔之位置避開反射杯。
應注意的是,反射杯為金屬材質。
應注意的是,反射杯包括槽體以及凸緣,凸緣沿槽體之邊緣向外延伸。
應注意的是,電路基板更包括一容置孔,反射杯設置於容置孔中,並且藉由凸緣使反射杯定位。
應注意的是,凸緣之形狀大致為圓環態樣。
應注意的是,發光二極體更包括第一絕緣層,第一絕緣層與凸緣設於同一平面上,且由側邊包覆凸緣。
應注意的是,第一絕緣層係為絕緣材質。
應注意的是,第一絕緣層更包括第三孔洞,第三孔洞之位置對應第一穿孔以及第二穿孔。
應注意的是,發光二極體更包括第二絕緣層,第二絕緣層設於第一絕緣層以及電路基板之間。
應注意的是,第二絕緣層係為絕緣材質。
應注意的是,第二絕緣層更包括第四孔洞,第四孔洞之位置對應第一穿孔以及第二穿孔。
應注意的是,透鏡係為半球形。
應注意的是,電路基板更包括下表面,於下表面上做電路設計。
應注意的是,電路連接板更包括上表面,於上表面上做電路設計。
第4圖係為本發明發光二極體之分解示意圖,第5圖係為本發明發光二極體之封裝完成示意圖,第6圖係為本發明發光二極體之另一視角示意圖。
請參閱第4-6圖,發光二極體40包括發光二極體晶片41、透鏡42、反射杯43、電路連接板44、電路基板45以及導線46。發光二極體晶片41包括二導線411、412,導線411、412與發光二極體晶片41電性連接,透鏡42罩設在發光二極體晶片41及反射杯43上,用以改變發光二極體晶片41所發出光線的路徑,反射杯43用以容置發光二極體晶片41並反射發光二極體晶片41所發出光線,電路連接板44包括第一穿孔441,而導線411、412與電路連接板44電性連接,電路基板45包括第二穿孔451,導線46設於第一穿孔441以及第二穿孔451中,使電路連接板44與電路基板45電性連接。而反射杯43設於電路連接板44以及電路基板45之間,且第一穿孔441與第二穿孔451之設置位置避開反射杯43,以保持散熱區域獨立。
電路基板45更包括容置孔452,反射杯43設置於容置孔452中,而反射杯43包括槽體431以及凸緣432,槽體431可容置發光二極體晶片41,凸緣432沿槽體431之邊緣向外延伸。其中,凸緣432之形狀大致為圓環態樣,並且該凸緣432之直徑需大於容置孔452之直徑,以藉由凸緣432將反射杯43定位於電路基板45上。
另外,發光二極體40更可包括第一絕緣層47以及第二絕緣層48。於本實施例中,第一絕緣層47數量為二,且大致呈拱形態樣,並與凸緣432設於同一平面上,由側邊包覆凸緣432。而第二絕緣層48設於第一絕緣層47以及電路基板45之間,第二絕緣層48對應電路基板45之容置孔452處對應設有容置孔482,使反射杯43之槽體431可通過容置孔452、482,並利用凸緣432將反射杯43架設於第二絕緣層48及電路基板45上。
第一絕緣層47更包括第三孔洞471,第三孔洞471之位置對應第一穿孔441以及第二穿孔451。第二絕緣層48更包括第四孔洞481,第四孔洞481之位置對應第一穿孔441以及第二穿孔451。當導線46連接電路連接板44以及電路基板45時,亦會通過第三孔洞471以及第四孔洞481。
應注意的是,反射杯43為金屬材質,而第一絕緣層47以及第二絕緣層48係為絕緣材質,透鏡42係為半球形並覆蓋在反射杯43及發光二極體晶片41上。另外,可參閱第6圖,電路基板45更包括下表面453,本實施例於下表面453上做電路設計,而第4圖中可看出,電路連接板44更包括上表面442,本實施例於上表面442上做電路設計,使反射杯43做為散熱區域時可保持獨立。
可搭配參閱第4、5圖,發光二極體晶片41設於反射杯43之槽體431中,反射杯43可先行以沖壓方式製作,因此具有光滑平面,發光二極體晶片41可透過反射杯43將光線集中向上反射,以提高發光效率。由於發光二極體晶片41設於反射杯43上,因此發光二極體晶片41所產生之熱量會傳導至反射杯43。而反射杯43下方設有以絕緣材料製成的第二絕緣層48,側邊設有以絕緣材料製成的第一絕緣層47包覆,另外,電路連接板44之電路設計更位於電路連接板44之上表面442,故反射杯43並不會直接與電路連接板44上表面442之電路設計處接觸,因此,發光二極體晶片41所產生之熱量不會影響到電路連接板44之運作,反射杯43的散熱區域可保持獨立。另外,反射杯43之槽體431通過容置孔452直接外露於外部,可增加散熱效率,而本發明之發光二極體40之結構設計可直接在電路基板45上進行製程,因此也沒有折腳膠裂之問題。
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。另外本發明的任一實施例或申請專利範圍不須達成本發明所揭露之全部目的或優點或特點。此外,摘要部分和標題僅是用來輔助專利文件搜尋之用,並非用來限制本發明之權利範圍。
10...支架型發光二極體
11、21、31...透鏡
12a、12b、22a、22b、32a、32b...支架
13、23、33...發光二極體晶片
14、24、34...導線
25、35...電路板
20...基板型發光二極體
30...標準平頂型發光二極體
36...反射杯
40...發光二極體
41...發光二極體晶片
411、412...導線
42...透鏡
43...反射杯
431...槽體
432...凸緣
44...電路連接板
441...第一穿孔
442...上表面
45...電路基板
451...第二穿孔
452...容置孔
453...下表面
46...導線
47...第一絕緣層
471...第三孔洞
48...第二絕緣層
481...第四孔洞
482...容置孔
第1圖為習知支架型發光二極體之示意圖;
第2圖為習知基板型發光二極體之示意圖;
第3圖為習知標準平頂型發光二極體之示意圖;
第4圖係為本發明發光二極體之分解示意圖:
第5圖係為本發明發光二極體之封裝完成示意圖;以及
第6圖係為本發明發光二極體之另一視角示意圖。
40...發光二極體
41...發光二極體晶片
411、412...導線
42...透鏡
43...反射杯
431...槽體
432...凸緣
44...電路連接板
441...第一穿孔
442...上表面
45...電路基板
451...第二穿孔
452...容置孔
46...導線
47...第一絕緣層
471...第三孔洞
48...第二絕緣層
481...第四孔洞
482...容置孔
Claims (12)
- 一種發光二極體,包括:一發光二極體晶片;一反射杯,該發光二極體晶片設置在該反射杯中,其中該反射杯包括一槽體以及一凸緣,該凸緣沿該槽體之邊緣向外延伸;一透鏡,罩設在該反射杯及該發光二極體晶片上;一電路連接板,包括一第一穿孔,該晶片與該電路連接板電性連接;一電路基板,用以承載該反射杯,該電路基板還包括一第二穿孔;以及一導電元件,該導電元件設於該第一穿孔以及該第二穿孔中,使該電路連接板與該電路基板電性導通;其中,該反射杯設於該電路連接板以及該電路基板之間,用以隔離該電路連接板與該電路基板,其中該電路基板更包括一容置孔,該反射杯設置於該容置孔中,並且藉由該凸緣使該反射杯定位。
- 如申請專利範圍第1項所述之發光二極體,其中該反射杯為金屬材質。
- 如申請專利範圍第1項所述之發光二極體,其中該槽體反射該晶片所發射之光線,且該光線經由該透鏡射出。
- 如申請專利範圍第1項所述之發光二極體,其中該凸緣之形狀大致為圓環態樣。
- 如申請專利範圍第1項所述之發光二極體,其更包括一第一絕緣層,該第一絕緣層與該凸緣設於同一平面上。
- 如申請專利範圍第5項所述之發光二極體,其中該第一絕緣層更包括形成有一開口,且該反射杯之凸緣緊抵於該開口。
- 如申請專利範圍第5項所述之發光二極體,其中該第一絕緣層更包括一第三孔洞,該第三孔洞對應設置於該第一穿孔以及該第二穿孔。
- 如申請專利範圍第5項所述之發光二極體,其更包括一第二絕緣層,設置於該第一絕緣層以及該電路基板之間。
- 如申請專利範圍第8項所述之發光二極體,其中該第二絕緣層更包括一第四孔洞,該第四孔洞對應設置於該第一穿孔以及該第二穿孔。
- 如申請專利範圍第1項所述之發光二極體,其中該透鏡係為半球形。
- 如申請專利範圍第1項所述之發光二極體,其中該電路基板更包括一下表面,於該下表面上做電路設計。
- 如申請專利範圍第1項所述之發光二極體,其中該電路連接板更包括一上表面,於該上表面上做電路設計。
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TW098133348A TWI416771B (zh) | 2009-10-01 | 2009-10-01 | 發光二極體 |
EP10161031.9A EP2306531A3 (en) | 2009-10-01 | 2010-04-26 | Light emitting diode |
US12/777,930 US8334546B2 (en) | 2009-10-01 | 2010-05-11 | Light emitting diode |
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TW098133348A TWI416771B (zh) | 2009-10-01 | 2009-10-01 | 發光二極體 |
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CN209963085U (zh) * | 2019-07-29 | 2020-01-17 | 普利仕科技(苏州工业园区)有限公司 | 高效率立体灯杯式led支架 |
CN116936717A (zh) * | 2023-08-22 | 2023-10-24 | 深圳市励研智能电子有限公司 | 高亮度led结构封装方法及led结构 |
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Publication number | Priority date | Publication date | Assignee | Title |
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TW200406897A (en) * | 2002-09-04 | 2004-05-01 | Cree Inc | Power surface mount light emitting die package |
TW200532948A (en) * | 2004-03-26 | 2005-10-01 | Super Bright Optoelectronics Inc | Encapsulation structure of light-emitting diode (LED) and method for encapsulating the same |
TW200715622A (en) * | 2005-09-01 | 2007-04-16 | Du Pont | Low temperature co-fired ceramic (LTCC) tape compositions, light-emitting diode (LED) modules, lighting devices and methods of forming thereof |
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TW560697U (en) | 2002-11-26 | 2003-11-01 | Topson Technology Co Ltd | Surface-mounting type light-emitting diode structure |
TW594950B (en) * | 2003-03-18 | 2004-06-21 | United Epitaxy Co Ltd | Light emitting diode and package scheme and method thereof |
JP4593201B2 (ja) * | 2004-08-20 | 2010-12-08 | 日立化成工業株式会社 | チップ部品型発光装置及びそのための配線基板 |
JP3956965B2 (ja) * | 2004-09-07 | 2007-08-08 | 日立エーアイシー株式会社 | チップ部品型発光装置及びそのための配線基板 |
TW200709475A (en) * | 2005-06-27 | 2007-03-01 | Lamina Ceramics Inc | Light emitting diode package and method for making same |
KR100764432B1 (ko) * | 2006-04-05 | 2007-10-05 | 삼성전기주식회사 | 아노다이징 절연 층을 갖는 엘이디 패키지 및 그 제조방법 |
JP5401025B2 (ja) * | 2007-09-25 | 2014-01-29 | 三洋電機株式会社 | 発光モジュールおよびその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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TW200406897A (en) * | 2002-09-04 | 2004-05-01 | Cree Inc | Power surface mount light emitting die package |
TW200532948A (en) * | 2004-03-26 | 2005-10-01 | Super Bright Optoelectronics Inc | Encapsulation structure of light-emitting diode (LED) and method for encapsulating the same |
TW200715622A (en) * | 2005-09-01 | 2007-04-16 | Du Pont | Low temperature co-fired ceramic (LTCC) tape compositions, light-emitting diode (LED) modules, lighting devices and methods of forming thereof |
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EP2306531A3 (en) | 2013-11-27 |
TW201114077A (en) | 2011-04-16 |
EP2306531A2 (en) | 2011-04-06 |
US8334546B2 (en) | 2012-12-18 |
US20110079808A1 (en) | 2011-04-07 |
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