JP4828248B2 - 発光装置及びその製造方法 - Google Patents
発光装置及びその製造方法 Download PDFInfo
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- JP4828248B2 JP4828248B2 JP2006038950A JP2006038950A JP4828248B2 JP 4828248 B2 JP4828248 B2 JP 4828248B2 JP 2006038950 A JP2006038950 A JP 2006038950A JP 2006038950 A JP2006038950 A JP 2006038950A JP 4828248 B2 JP4828248 B2 JP 4828248B2
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- 229910052782 aluminium Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 229910052763 palladium Inorganic materials 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
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- 229920002050 silicone resin Polymers 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 238000003860 storage Methods 0.000 description 6
- 229910000881 Cu alloy Inorganic materials 0.000 description 5
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
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- 239000004020 conductor Substances 0.000 description 3
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- 238000009713 electroplating Methods 0.000 description 3
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T83/00—Cutting
- Y10T83/04—Processes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
図2は、本発明の第1の実施の形態に係る発光装置の断面図である。図2に示すθ2は、金属枠体15の底面15Aに対する収容部28の側面28Aの傾斜角度(以下、「傾斜角度θ2」とする)を示している。
図17は、本発明の第2の実施の形態に係る発光装置の断面図である。図17において、第1の実施の形態の発光装置10と同一構成部分には同一符号を付す。
図19は、本発明の第3の実施の形態に係る発光装置の断面図であり、図20は、本発明の第3の実施の形態に係る発光装置の平面図である。図19及び図20において、第1の実施の形態の発光装置10と同一構成部分には同一符号を付す。また、図19おいて、θ4は金属枠体62の底面62Aに対する収容部65の側面65Aの傾斜角度(以下、「傾斜角度θ4」とする)、θ5は金属枠体62の底面62Aに対する収容部65の側面65Bの傾斜角度(以下、「傾斜角度θ5」とする)をそれぞれ示している。
図26は、本発明の第4の実施の形態に係る発光装置の断面図であり、図27は、本発明の第4の実施の形態に係る発光装置の平面図である。また、図28は、金属カバーの平面図である。図26において、第1の実施の形態の発光装置10と同一構成部分には同一符号を付す。また、図26に示すM4は、基板本体18と接触する部分の金属カバー81の厚さ(以下、「厚さM4」とする)を示している。
11,61,71 基板
12 発光素子
13 蛍光体含有樹脂
15,30,62,75 金属枠体
15A,62A 底面
16,82 封止樹脂
18,63,72 基板本体
18A 下面
19 配線パターン
21,85 貫通孔
22 ビア
23 配線
25 電極
26 バンプ
28,31,65,84 収容部
28A,31A,31B,65A,65B 側面
35,87 金属板
35B 金属板部分
36,41,45,77,88,93,97 下部金型
37,42,46,78,91,94,98 上部金型
37A,38A,84A 面
38,43,47,79,92,95,99 凸部
39 凹部
41A,45A,77A,93A,97A 開口部
51 反射部材
62B 外周面
62D,62E 角部
64,73 金属枠体挿入部
66,76 切断部
81 金属カバー
A,E 金属枠体形成領域
B 金属カバー形成領域
C1,C2 方向
D1,D2 深さ
M1〜M5 厚さ
R1 直径
θ2〜θ5 傾斜角度
W1 幅
Claims (3)
- 発光素子と、該発光素子が配設される基板とを備えた発光装置であって、
前記基板上に、前記発光素子を収容すると共に、前記基板からその上方に向かうにつれて幅広となるような形状とされた収容部を有する金属枠体を設けており、
前記基板は、前記金属枠体の少なくとも一部が挿入される金属枠体挿入部を有し、
前記金属枠体に該金属枠体の外形を変形可能にする切断部を設けたことを特徴とする発光装置。 - 前記発光素子を囲む収容部の面に、前記発光素子が放出する光を反射する反射部材を設
けたことを特徴とする請求項1記載の発光装置。 - 発光素子と、該発光素子が配設される基板と、該基板上に設けられ、前記発光素子を収容すると共に、前記基板からその上方に向かうにつれて幅広となるような形状とされた収容部を有する金属枠体とを備え、
前記基板が前記金属枠体の少なくとも一部を挿入する金属枠体挿入部を有する発光装置の製造方法であって、
前記金属枠体が形成される金属枠体形成領域を複数有する金属板を準備する金属板準備工程と、
前記金属枠体形成領域に対応する前記金属板に、プレス加工により前記収容部を形成する収容部形成工程と、
前記金属枠体に該金属枠体の外形を変形可能にする切断部を形成する切断部形成工程とを含むことを特徴とする発光装置の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006038950A JP4828248B2 (ja) | 2006-02-16 | 2006-02-16 | 発光装置及びその製造方法 |
US11/673,818 US7838897B2 (en) | 2006-02-16 | 2007-02-12 | Light-emitting device and method for manufacturing the same |
KR1020070015329A KR20070082538A (ko) | 2006-02-16 | 2007-02-14 | 발광 장치 및 그 제조 방법 |
TW096105656A TW200737555A (en) | 2006-02-16 | 2007-02-15 | Light-emitting device and method for manufacturing the same |
EP15194789.2A EP3007241A1 (en) | 2006-02-16 | 2007-02-16 | Light-emitting device and method for manufacturing the same |
EP07003322.0A EP1821345B1 (en) | 2006-02-16 | 2007-02-16 | Light-emitting device and method for manufacturing the same |
US12/907,594 US8044429B2 (en) | 2006-02-16 | 2010-10-19 | Light-emitting device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006038950A JP4828248B2 (ja) | 2006-02-16 | 2006-02-16 | 発光装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007220852A JP2007220852A (ja) | 2007-08-30 |
JP4828248B2 true JP4828248B2 (ja) | 2011-11-30 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006038950A Expired - Fee Related JP4828248B2 (ja) | 2006-02-16 | 2006-02-16 | 発光装置及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7838897B2 (ja) |
EP (2) | EP3007241A1 (ja) |
JP (1) | JP4828248B2 (ja) |
KR (1) | KR20070082538A (ja) |
TW (1) | TW200737555A (ja) |
Families Citing this family (37)
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US8044412B2 (en) * | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
JP2008258530A (ja) * | 2007-04-09 | 2008-10-23 | Rohm Co Ltd | 半導体発光装置 |
EP2017891A1 (en) * | 2007-07-20 | 2009-01-21 | ABB Technology AG | Semiconductor module |
US9086213B2 (en) | 2007-10-17 | 2015-07-21 | Xicato, Inc. | Illumination device with light emitting diodes |
JP5185683B2 (ja) * | 2008-04-24 | 2013-04-17 | パナソニック株式会社 | Ledモジュールの製造方法および照明器具の製造方法 |
US7851818B2 (en) * | 2008-06-27 | 2010-12-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fabrication of compact opto-electronic component packages |
KR101582522B1 (ko) * | 2008-07-01 | 2016-01-06 | 코닌클리케 필립스 엔.브이. | Led를 위한 근접 시준기 |
KR20100094246A (ko) * | 2009-02-18 | 2010-08-26 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
DE102009019412A1 (de) * | 2009-04-29 | 2010-11-04 | Fa. Austria Technologie & Systemtechnik Ag | Verfahren zur Herstellung einer Leiterplatte mit LEDs und gedruckter Reflektorfläche sowie Leiterplatte, hergestellt nach dem Verfahren |
JP2011109010A (ja) * | 2009-11-20 | 2011-06-02 | Toshiba Lighting & Technology Corp | 照明装置 |
JP2014026993A (ja) * | 2010-11-08 | 2014-02-06 | Panasonic Corp | セラミック基板と発光ダイオードモジュール |
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JPH11168172A (ja) * | 1997-12-04 | 1999-06-22 | Toshiba Tec Corp | 半導体チップの製造方法及びその半導体チップによる3次元構造体、その製造方法及びその電気的接続方法 |
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EP1433831B1 (en) * | 2002-03-22 | 2018-06-06 | Nichia Corporation | Nitride phosphor and method for preparation thereof, and light emitting device |
US7264378B2 (en) | 2002-09-04 | 2007-09-04 | Cree, Inc. | Power surface mount light emitting die package |
TW563263B (en) * | 2002-09-27 | 2003-11-21 | United Epitaxy Co Ltd | Surface mounting method for high power light emitting diode |
JP4280050B2 (ja) * | 2002-10-07 | 2009-06-17 | シチズン電子株式会社 | 白色発光装置 |
JP4164006B2 (ja) * | 2003-02-17 | 2008-10-08 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
US20040188696A1 (en) * | 2003-03-28 | 2004-09-30 | Gelcore, Llc | LED power package |
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US7329982B2 (en) * | 2004-10-29 | 2008-02-12 | 3M Innovative Properties Company | LED package with non-bonded optical element |
-
2006
- 2006-02-16 JP JP2006038950A patent/JP4828248B2/ja not_active Expired - Fee Related
-
2007
- 2007-02-12 US US11/673,818 patent/US7838897B2/en not_active Expired - Fee Related
- 2007-02-14 KR KR1020070015329A patent/KR20070082538A/ko not_active Application Discontinuation
- 2007-02-15 TW TW096105656A patent/TW200737555A/zh unknown
- 2007-02-16 EP EP15194789.2A patent/EP3007241A1/en not_active Withdrawn
- 2007-02-16 EP EP07003322.0A patent/EP1821345B1/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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US8044429B2 (en) | 2011-10-25 |
EP1821345B1 (en) | 2016-07-13 |
JP2007220852A (ja) | 2007-08-30 |
EP1821345A3 (en) | 2010-10-20 |
KR20070082538A (ko) | 2007-08-21 |
EP3007241A1 (en) | 2016-04-13 |
US20110032710A1 (en) | 2011-02-10 |
TW200737555A (en) | 2007-10-01 |
US20070187706A1 (en) | 2007-08-16 |
US7838897B2 (en) | 2010-11-23 |
EP1821345A2 (en) | 2007-08-22 |
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