SG82690G - A semiconductor integrated circuit device and a process for manufacturing such a device - Google Patents

A semiconductor integrated circuit device and a process for manufacturing such a device

Info

Publication number
SG82690G
SG82690G SG826/90A SG82690A SG82690G SG 82690 G SG82690 G SG 82690G SG 826/90 A SG826/90 A SG 826/90A SG 82690 A SG82690 A SG 82690A SG 82690 G SG82690 G SG 82690G
Authority
SG
Singapore
Prior art keywords
manufacturing
integrated circuit
semiconductor integrated
circuit device
semiconductor
Prior art date
Application number
SG826/90A
Other languages
English (en)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59180533A external-priority patent/JPH0652782B2/ja
Priority claimed from JP59218470A external-priority patent/JPS6197961A/ja
Priority claimed from JP59218471A external-priority patent/JPS6197962A/ja
Priority claimed from JP59218472A external-priority patent/JPS6197963A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of SG82690G publication Critical patent/SG82690G/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G11C11/4125Cells incorporating circuit means for protecting against loss of information
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • H10B10/15Static random access memory [SRAM] devices comprising a resistor load element
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
SG826/90A 1984-08-31 1990-10-11 A semiconductor integrated circuit device and a process for manufacturing such a device SG82690G (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP59180533A JPH0652782B2 (ja) 1984-08-31 1984-08-31 半導体集積回路装置
JP59218470A JPS6197961A (ja) 1984-10-19 1984-10-19 半導体集積回路装置の製造方法
JP59218471A JPS6197962A (ja) 1984-10-19 1984-10-19 半導体集積回路装置
JP59218472A JPS6197963A (ja) 1984-10-19 1984-10-19 半導体集積回路装置

Publications (1)

Publication Number Publication Date
SG82690G true SG82690G (en) 1990-11-23

Family

ID=27474935

Family Applications (1)

Application Number Title Priority Date Filing Date
SG826/90A SG82690G (en) 1984-08-31 1990-10-11 A semiconductor integrated circuit device and a process for manufacturing such a device

Country Status (6)

Country Link
US (1) US4890148A (de)
KR (1) KR940002772B1 (de)
DE (1) DE3530897C2 (de)
GB (3) GB2163901B (de)
HK (2) HK94790A (de)
SG (1) SG82690G (de)

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JPS6289341A (ja) * 1985-10-15 1987-04-23 Mitsubishi Electric Corp マスタスライス方式大規模半導体集積回路装置の製造方法
US4797804A (en) * 1987-03-09 1989-01-10 International Business Machines Corporation High density, high performance, single event upset immune data storage cell
US5243208A (en) * 1987-05-27 1993-09-07 Hitachi, Ltd. Semiconductor integrated circuit device having a gate array with a ram and by-pass signal lines which interconnect a logic section and I/O unit circuit of the gate array
JPS63293966A (ja) * 1987-05-27 1988-11-30 Hitachi Ltd 半導体集積回路装置
KR900008868B1 (ko) * 1987-09-30 1990-12-11 삼성전자 주식회사 저항성 접촉을 갖는 반도체 장치의 제조방법
US5194749A (en) * 1987-11-30 1993-03-16 Hitachi, Ltd. Semiconductor integrated circuit device
US5223733A (en) * 1988-10-31 1993-06-29 Hitachi, Ltd. Semiconductor integrated circuit apparatus and method for designing the same
US5770892A (en) * 1989-01-18 1998-06-23 Sgs-Thomson Microelectronics, Inc. Field effect device with polycrystalline silicon channel
US5801396A (en) * 1989-01-18 1998-09-01 Stmicroelectronics, Inc. Inverted field-effect device with polycrystalline silicon/germanium channel
JP2509697B2 (ja) * 1989-04-28 1996-06-26 株式会社東芝 半導体装置およびその製造方法
US5452247A (en) * 1989-12-20 1995-09-19 Fujitsu Limited Three-dimensional static random access memory device for avoiding disconnection among transistors of each memory cell
JPH04212426A (ja) * 1990-06-21 1992-08-04 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2599495B2 (ja) * 1990-09-05 1997-04-09 シャープ株式会社 半導体装置の製造方法
JP2936704B2 (ja) * 1990-11-27 1999-08-23 ソニー株式会社 半導体メモリ
US5298782A (en) * 1991-06-03 1994-03-29 Sgs-Thomson Microelectronics, Inc. Stacked CMOS SRAM cell with polysilicon transistor load
KR930011238A (ko) * 1991-11-12 1993-06-24 오리 노리오 스태틱 알에이엠(ram)의 메모리셀 및 그 메모리셀어레이
JPH0661454A (ja) * 1992-08-10 1994-03-04 Hitachi Ltd 半導体集積回路装置
US5864571A (en) * 1996-12-11 1999-01-26 International Business Machines Corporation Error detection circuit using two bit to four bit encoder
JP3047850B2 (ja) 1997-03-31 2000-06-05 日本電気株式会社 半導体装置
US6140684A (en) * 1997-06-24 2000-10-31 Stmicroelectronic, Inc. SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers
DE69732838D1 (de) * 1997-07-16 2005-04-28 St Microelectronics Srl Herstellungsverfahren für einen integrierten Schaltkreis mit einer Speicherzellenmatrix
JP2001358233A (ja) * 2000-06-15 2001-12-26 Hitachi Ltd 半導体集積回路装置および半導体集積回路装置の製造方法
US7319253B2 (en) * 2004-07-01 2008-01-15 Altera Corporation Integrated circuit structures for increasing resistance to single event upset
US7956421B2 (en) 2008-03-13 2011-06-07 Tela Innovations, Inc. Cross-coupled transistor layouts in restricted gate level layout architecture
US7763534B2 (en) 2007-10-26 2010-07-27 Tela Innovations, Inc. Methods, structures and designs for self-aligning local interconnects used in integrated circuits
US7446352B2 (en) 2006-03-09 2008-11-04 Tela Innovations, Inc. Dynamic array architecture
US8658542B2 (en) 2006-03-09 2014-02-25 Tela Innovations, Inc. Coarse grid design methods and structures
US8541879B2 (en) 2007-12-13 2013-09-24 Tela Innovations, Inc. Super-self-aligned contacts and method for making the same
US9563733B2 (en) 2009-05-06 2017-02-07 Tela Innovations, Inc. Cell circuit and layout with linear finfet structures
US8653857B2 (en) 2006-03-09 2014-02-18 Tela Innovations, Inc. Circuitry and layouts for XOR and XNOR logic
US8667443B2 (en) 2007-03-05 2014-03-04 Tela Innovations, Inc. Integrated circuit cell library for multiple patterning
US7939443B2 (en) 2008-03-27 2011-05-10 Tela Innovations, Inc. Methods for multi-wire routing and apparatus implementing same
SG10201608214SA (en) 2008-07-16 2016-11-29 Tela Innovations Inc Methods for cell phasing and placement in dynamic array architecture and implementation of the same

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DE1912176C2 (de) * 1969-03-11 1983-10-27 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Speicherzelle
DE2103573A1 (de) * 1971-01-26 1972-08-03 Siemens Ag Integriertes Halbleiterbauelement, insbesondere verlustarmes Speicherelement, in Komplementärkanal-Technik
DE2760086C2 (de) * 1976-07-26 1988-02-18 Hitachi, Ltd., Tokio/Tokyo, Jp
US4125854A (en) * 1976-12-02 1978-11-14 Mostek Corporation Symmetrical cell layout for static RAM
US4240097A (en) * 1977-05-31 1980-12-16 Texas Instruments Incorporated Field-effect transistor structure in multilevel polycrystalline silicon
US4140967A (en) * 1977-06-24 1979-02-20 International Business Machines Corporation Merged array PLA device, circuit, fabrication method and testing technique
JPS54128295A (en) * 1978-03-29 1979-10-04 Hitachi Ltd Mis-type semiconductor integrated circuit device
DE2815605C3 (de) * 1978-04-11 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher mit Ansteuerleitungen hoher Leitfähigkeit
US4276557A (en) * 1978-12-29 1981-06-30 Bell Telephone Laboratories, Incorporated Integrated semiconductor circuit structure and method for making it
US4246592A (en) * 1979-01-02 1981-01-20 Texas Instruments Incorporated High density static memory cell
US4246593A (en) * 1979-01-02 1981-01-20 Texas Instruments Incorporated High density static memory cell with polysilicon resistors
US4248592A (en) * 1979-02-13 1981-02-03 Juan Salvans Method and apparatus for coloring tow and colored tow produced therefrom
US4475964A (en) * 1979-02-20 1984-10-09 Tokyo Shibaura Denki Kabushiki Kaisha Method of manufacturing a semiconductor device
US4453175A (en) * 1979-09-19 1984-06-05 Tokyo Shibaura Denki Kabushiki Kaisha MOS Static RAM layout with polysilicon resistors over FET gates
GB2070329B (en) * 1980-01-25 1983-10-26 Tokyo Shibaura Electric Co Semiconductor memory device
US4471374A (en) * 1980-06-30 1984-09-11 Inmos Corporation Single polycrystalline silicon memory cell
DE3027175A1 (de) * 1980-07-17 1982-02-11 Siemens AG, 1000 Berlin und 8000 München Anordnung zur verringerung der strahlungsempfindlichkeit von in integrierter mos-schaltkreistechnik ausgefuehrten speicherzellen
JPS57130461A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor memory storage
JPS57192064A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Semiconductor integrated circuit
IL67815A (en) * 1982-02-12 1988-01-31 Sanz Ernst Method and apparatus for cardiogonometry
DE3380548D1 (en) * 1982-03-03 1989-10-12 Fujitsu Ltd A semiconductor memory device
EP0088912A3 (de) * 1982-03-15 1985-11-06 Texas Instruments Incorporated Subschwellenwert-Lastelement für statische RAM-Zelle
JPS5916370A (ja) * 1982-07-19 1984-01-27 Toshiba Corp 半導体記憶装置
JPS60130161A (ja) * 1983-12-16 1985-07-11 Fujitsu Ltd スタテイツクメモリセル

Also Published As

Publication number Publication date
GB2195496B (en) 1989-05-17
HK94790A (en) 1990-11-23
GB8720042D0 (en) 1987-09-30
GB8520741D0 (en) 1985-09-25
GB8720041D0 (en) 1987-09-30
GB2163901A (en) 1986-03-05
KR860002154A (ko) 1986-03-26
DE3530897C2 (de) 1994-10-13
HK94690A (en) 1990-11-23
DE3530897A1 (de) 1986-03-13
GB2163901B (en) 1989-05-17
US4890148A (en) 1989-12-26
KR940002772B1 (ko) 1994-04-02
GB2195496A (en) 1988-04-07
GB2195497A (en) 1988-04-07

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