SG82690G - A semiconductor integrated circuit device and a process for manufacturing such a device - Google Patents
A semiconductor integrated circuit device and a process for manufacturing such a deviceInfo
- Publication number
- SG82690G SG82690G SG826/90A SG82690A SG82690G SG 82690 G SG82690 G SG 82690G SG 826/90 A SG826/90 A SG 826/90A SG 82690 A SG82690 A SG 82690A SG 82690 G SG82690 G SG 82690G
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- integrated circuit
- semiconductor integrated
- circuit device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
- G11C11/4125—Cells incorporating circuit means for protecting against loss of information
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59180533A JPH0652782B2 (ja) | 1984-08-31 | 1984-08-31 | 半導体集積回路装置 |
JP59218470A JPS6197961A (ja) | 1984-10-19 | 1984-10-19 | 半導体集積回路装置の製造方法 |
JP59218471A JPS6197962A (ja) | 1984-10-19 | 1984-10-19 | 半導体集積回路装置 |
JP59218472A JPS6197963A (ja) | 1984-10-19 | 1984-10-19 | 半導体集積回路装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG82690G true SG82690G (en) | 1990-11-23 |
Family
ID=27474935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG826/90A SG82690G (en) | 1984-08-31 | 1990-10-11 | A semiconductor integrated circuit device and a process for manufacturing such a device |
Country Status (6)
Country | Link |
---|---|
US (1) | US4890148A (de) |
KR (1) | KR940002772B1 (de) |
DE (1) | DE3530897C2 (de) |
GB (3) | GB2163901B (de) |
HK (2) | HK94790A (de) |
SG (1) | SG82690G (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6289341A (ja) * | 1985-10-15 | 1987-04-23 | Mitsubishi Electric Corp | マスタスライス方式大規模半導体集積回路装置の製造方法 |
US4797804A (en) * | 1987-03-09 | 1989-01-10 | International Business Machines Corporation | High density, high performance, single event upset immune data storage cell |
US5243208A (en) * | 1987-05-27 | 1993-09-07 | Hitachi, Ltd. | Semiconductor integrated circuit device having a gate array with a ram and by-pass signal lines which interconnect a logic section and I/O unit circuit of the gate array |
JPS63293966A (ja) * | 1987-05-27 | 1988-11-30 | Hitachi Ltd | 半導体集積回路装置 |
KR900008868B1 (ko) * | 1987-09-30 | 1990-12-11 | 삼성전자 주식회사 | 저항성 접촉을 갖는 반도체 장치의 제조방법 |
US5194749A (en) * | 1987-11-30 | 1993-03-16 | Hitachi, Ltd. | Semiconductor integrated circuit device |
US5223733A (en) * | 1988-10-31 | 1993-06-29 | Hitachi, Ltd. | Semiconductor integrated circuit apparatus and method for designing the same |
US5770892A (en) * | 1989-01-18 | 1998-06-23 | Sgs-Thomson Microelectronics, Inc. | Field effect device with polycrystalline silicon channel |
US5801396A (en) * | 1989-01-18 | 1998-09-01 | Stmicroelectronics, Inc. | Inverted field-effect device with polycrystalline silicon/germanium channel |
JP2509697B2 (ja) * | 1989-04-28 | 1996-06-26 | 株式会社東芝 | 半導体装置およびその製造方法 |
US5452247A (en) * | 1989-12-20 | 1995-09-19 | Fujitsu Limited | Three-dimensional static random access memory device for avoiding disconnection among transistors of each memory cell |
JPH04212426A (ja) * | 1990-06-21 | 1992-08-04 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2599495B2 (ja) * | 1990-09-05 | 1997-04-09 | シャープ株式会社 | 半導体装置の製造方法 |
JP2936704B2 (ja) * | 1990-11-27 | 1999-08-23 | ソニー株式会社 | 半導体メモリ |
US5298782A (en) * | 1991-06-03 | 1994-03-29 | Sgs-Thomson Microelectronics, Inc. | Stacked CMOS SRAM cell with polysilicon transistor load |
KR930011238A (ko) * | 1991-11-12 | 1993-06-24 | 오리 노리오 | 스태틱 알에이엠(ram)의 메모리셀 및 그 메모리셀어레이 |
JPH0661454A (ja) * | 1992-08-10 | 1994-03-04 | Hitachi Ltd | 半導体集積回路装置 |
US5864571A (en) * | 1996-12-11 | 1999-01-26 | International Business Machines Corporation | Error detection circuit using two bit to four bit encoder |
JP3047850B2 (ja) | 1997-03-31 | 2000-06-05 | 日本電気株式会社 | 半導体装置 |
US6140684A (en) * | 1997-06-24 | 2000-10-31 | Stmicroelectronic, Inc. | SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers |
DE69732838D1 (de) * | 1997-07-16 | 2005-04-28 | St Microelectronics Srl | Herstellungsverfahren für einen integrierten Schaltkreis mit einer Speicherzellenmatrix |
JP2001358233A (ja) * | 2000-06-15 | 2001-12-26 | Hitachi Ltd | 半導体集積回路装置および半導体集積回路装置の製造方法 |
US7319253B2 (en) * | 2004-07-01 | 2008-01-15 | Altera Corporation | Integrated circuit structures for increasing resistance to single event upset |
US7956421B2 (en) | 2008-03-13 | 2011-06-07 | Tela Innovations, Inc. | Cross-coupled transistor layouts in restricted gate level layout architecture |
US7763534B2 (en) | 2007-10-26 | 2010-07-27 | Tela Innovations, Inc. | Methods, structures and designs for self-aligning local interconnects used in integrated circuits |
US7446352B2 (en) | 2006-03-09 | 2008-11-04 | Tela Innovations, Inc. | Dynamic array architecture |
US8658542B2 (en) | 2006-03-09 | 2014-02-25 | Tela Innovations, Inc. | Coarse grid design methods and structures |
US8541879B2 (en) | 2007-12-13 | 2013-09-24 | Tela Innovations, Inc. | Super-self-aligned contacts and method for making the same |
US9563733B2 (en) | 2009-05-06 | 2017-02-07 | Tela Innovations, Inc. | Cell circuit and layout with linear finfet structures |
US8653857B2 (en) | 2006-03-09 | 2014-02-18 | Tela Innovations, Inc. | Circuitry and layouts for XOR and XNOR logic |
US8667443B2 (en) | 2007-03-05 | 2014-03-04 | Tela Innovations, Inc. | Integrated circuit cell library for multiple patterning |
US7939443B2 (en) | 2008-03-27 | 2011-05-10 | Tela Innovations, Inc. | Methods for multi-wire routing and apparatus implementing same |
SG10201608214SA (en) | 2008-07-16 | 2016-11-29 | Tela Innovations Inc | Methods for cell phasing and placement in dynamic array architecture and implementation of the same |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1912176C2 (de) * | 1969-03-11 | 1983-10-27 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithische Speicherzelle |
DE2103573A1 (de) * | 1971-01-26 | 1972-08-03 | Siemens Ag | Integriertes Halbleiterbauelement, insbesondere verlustarmes Speicherelement, in Komplementärkanal-Technik |
DE2760086C2 (de) * | 1976-07-26 | 1988-02-18 | Hitachi, Ltd., Tokio/Tokyo, Jp | |
US4125854A (en) * | 1976-12-02 | 1978-11-14 | Mostek Corporation | Symmetrical cell layout for static RAM |
US4240097A (en) * | 1977-05-31 | 1980-12-16 | Texas Instruments Incorporated | Field-effect transistor structure in multilevel polycrystalline silicon |
US4140967A (en) * | 1977-06-24 | 1979-02-20 | International Business Machines Corporation | Merged array PLA device, circuit, fabrication method and testing technique |
JPS54128295A (en) * | 1978-03-29 | 1979-10-04 | Hitachi Ltd | Mis-type semiconductor integrated circuit device |
DE2815605C3 (de) * | 1978-04-11 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterspeicher mit Ansteuerleitungen hoher Leitfähigkeit |
US4276557A (en) * | 1978-12-29 | 1981-06-30 | Bell Telephone Laboratories, Incorporated | Integrated semiconductor circuit structure and method for making it |
US4246592A (en) * | 1979-01-02 | 1981-01-20 | Texas Instruments Incorporated | High density static memory cell |
US4246593A (en) * | 1979-01-02 | 1981-01-20 | Texas Instruments Incorporated | High density static memory cell with polysilicon resistors |
US4248592A (en) * | 1979-02-13 | 1981-02-03 | Juan Salvans | Method and apparatus for coloring tow and colored tow produced therefrom |
US4475964A (en) * | 1979-02-20 | 1984-10-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device |
US4453175A (en) * | 1979-09-19 | 1984-06-05 | Tokyo Shibaura Denki Kabushiki Kaisha | MOS Static RAM layout with polysilicon resistors over FET gates |
GB2070329B (en) * | 1980-01-25 | 1983-10-26 | Tokyo Shibaura Electric Co | Semiconductor memory device |
US4471374A (en) * | 1980-06-30 | 1984-09-11 | Inmos Corporation | Single polycrystalline silicon memory cell |
DE3027175A1 (de) * | 1980-07-17 | 1982-02-11 | Siemens AG, 1000 Berlin und 8000 München | Anordnung zur verringerung der strahlungsempfindlichkeit von in integrierter mos-schaltkreistechnik ausgefuehrten speicherzellen |
JPS57130461A (en) * | 1981-02-06 | 1982-08-12 | Hitachi Ltd | Semiconductor memory storage |
JPS57192064A (en) * | 1981-05-22 | 1982-11-26 | Hitachi Ltd | Semiconductor integrated circuit |
IL67815A (en) * | 1982-02-12 | 1988-01-31 | Sanz Ernst | Method and apparatus for cardiogonometry |
DE3380548D1 (en) * | 1982-03-03 | 1989-10-12 | Fujitsu Ltd | A semiconductor memory device |
EP0088912A3 (de) * | 1982-03-15 | 1985-11-06 | Texas Instruments Incorporated | Subschwellenwert-Lastelement für statische RAM-Zelle |
JPS5916370A (ja) * | 1982-07-19 | 1984-01-27 | Toshiba Corp | 半導体記憶装置 |
JPS60130161A (ja) * | 1983-12-16 | 1985-07-11 | Fujitsu Ltd | スタテイツクメモリセル |
-
1985
- 1985-08-13 KR KR1019850005816A patent/KR940002772B1/ko not_active IP Right Cessation
- 1985-08-19 GB GB8520741A patent/GB2163901B/en not_active Expired
- 1985-08-29 DE DE3530897A patent/DE3530897C2/de not_active Expired - Fee Related
-
1987
- 1987-08-25 GB GB8720041A patent/GB2195496B/en not_active Expired
- 1987-08-25 GB GB08720042A patent/GB2195497A/en not_active Withdrawn
-
1988
- 1988-07-07 US US07/218,486 patent/US4890148A/en not_active Expired - Lifetime
-
1990
- 1990-10-11 SG SG826/90A patent/SG82690G/en unknown
- 1990-11-15 HK HK947/90A patent/HK94790A/xx not_active IP Right Cessation
- 1990-11-15 HK HK946/90A patent/HK94690A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
GB2195496B (en) | 1989-05-17 |
HK94790A (en) | 1990-11-23 |
GB8720042D0 (en) | 1987-09-30 |
GB8520741D0 (en) | 1985-09-25 |
GB8720041D0 (en) | 1987-09-30 |
GB2163901A (en) | 1986-03-05 |
KR860002154A (ko) | 1986-03-26 |
DE3530897C2 (de) | 1994-10-13 |
HK94690A (en) | 1990-11-23 |
DE3530897A1 (de) | 1986-03-13 |
GB2163901B (en) | 1989-05-17 |
US4890148A (en) | 1989-12-26 |
KR940002772B1 (ko) | 1994-04-02 |
GB2195496A (en) | 1988-04-07 |
GB2195497A (en) | 1988-04-07 |
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