NL8803222A - Verspreid leesbesturingscircuit voor een leesversterker van een geheugenorgaan. - Google Patents

Verspreid leesbesturingscircuit voor een leesversterker van een geheugenorgaan. Download PDF

Info

Publication number
NL8803222A
NL8803222A NL8803222A NL8803222A NL8803222A NL 8803222 A NL8803222 A NL 8803222A NL 8803222 A NL8803222 A NL 8803222A NL 8803222 A NL8803222 A NL 8803222A NL 8803222 A NL8803222 A NL 8803222A
Authority
NL
Netherlands
Prior art keywords
detection
detection control
transistors
resistance means
control transistors
Prior art date
Application number
NL8803222A
Other languages
English (en)
Dutch (nl)
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of NL8803222A publication Critical patent/NL8803222A/nl

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
NL8803222A 1988-06-07 1988-12-30 Verspreid leesbesturingscircuit voor een leesversterker van een geheugenorgaan. NL8803222A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019880006797A KR910009551B1 (ko) 1988-06-07 1988-06-07 메모리장치의 센스앰프 분할 제어회로
KR880006797 1988-06-07

Publications (1)

Publication Number Publication Date
NL8803222A true NL8803222A (nl) 1990-01-02

Family

ID=19275005

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8803222A NL8803222A (nl) 1988-06-07 1988-12-30 Verspreid leesbesturingscircuit voor een leesversterker van een geheugenorgaan.

Country Status (7)

Country Link
US (1) US4948993A (ko)
JP (1) JPH0227591A (ko)
KR (1) KR910009551B1 (ko)
DE (1) DE3844154A1 (ko)
FR (1) FR2632439A1 (ko)
GB (1) GB2220537B (ko)
NL (1) NL8803222A (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3260393B2 (ja) * 1991-02-01 2002-02-25 株式会社東芝 ダイナミック型半導体記憶装置
DE69028625T2 (de) * 1990-06-12 1997-01-30 Fujitsu Ltd Dynamische Speichereinrichtung mit wahlfreiem Zugriff
JP3319610B2 (ja) * 1991-11-22 2002-09-03 日本テキサス・インスツルメンツ株式会社 信号伝達回路
JP2672721B2 (ja) * 1991-05-27 1997-11-05 株式会社東芝 センスアンプ回路
EP0597231B1 (en) * 1992-11-12 1998-11-25 United Memories, Inc. Sense amplifier for an integrated circuit memory
JPH06162779A (ja) * 1992-11-24 1994-06-10 Oki Electric Ind Co Ltd 半導体記憶装置におけるセンスアンプ制御回路
US5901088A (en) * 1998-02-11 1999-05-04 Ramtron International Corporation Sense amplifier utilizing a balancing resistor
US6026042A (en) * 1998-04-10 2000-02-15 Micron Technology, Inc. Method and apparatus for enhancing the performance of semiconductor memory devices
KR100298443B1 (ko) * 1998-08-18 2001-08-07 김영환 센스앰프제어회로
JP3453552B2 (ja) 2000-08-31 2003-10-06 松下電器産業株式会社 半導体記憶装置
JP2002208277A (ja) 2001-01-05 2002-07-26 Toshiba Corp 半導体記憶装置のセンスアンプ制御回路
KR101391355B1 (ko) * 2007-07-23 2014-05-02 삼성전자주식회사 반도체 메모리 장치 및 그것의 데이터 감지 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4031522A (en) * 1975-07-10 1977-06-21 Burroughs Corporation Ultra high sensitivity sense amplifier for memories employing single transistor cells
US4533843A (en) * 1978-09-07 1985-08-06 Texas Instruments Incorporated High performance dynamic sense amplifier with voltage boost for row address lines
US4543501A (en) * 1978-09-22 1985-09-24 Texas Instruments Incorporated High performance dynamic sense amplifier with dual channel grounding transistor
US4543500A (en) * 1978-09-22 1985-09-24 Texas Instruments Incorporated High performance dynamic sense amplifier voltage boost for row address lines
JPS5819793A (ja) * 1981-07-27 1983-02-04 Toshiba Corp 半導体メモリ装置
JPS592365A (ja) * 1982-06-28 1984-01-07 Fujitsu Ltd ダイナミツク型半導体記憶装置
JPS5948889A (ja) * 1982-09-10 1984-03-21 Hitachi Ltd Ｍｏｓ記憶装置
JPH0746500B2 (ja) * 1984-03-19 1995-05-17 株式会社日立製作所 集積回路メモリ装置
US4604732A (en) * 1984-05-29 1986-08-05 Thomson Components-Mostek Corporation Power supply dependent voltage reference circuit
JPS6177198A (ja) * 1984-09-21 1986-04-19 Toshiba Corp 半導体記憶装置
JPS62270098A (ja) * 1986-05-19 1987-11-24 Toshiba Corp 半導体センス回路
JPS63164092A (ja) * 1986-12-26 1988-07-07 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
KR900000906A (ko) 1990-01-31
GB2220537A (en) 1990-01-10
GB2220537B (en) 1992-05-06
FR2632439A1 (fr) 1989-12-08
KR910009551B1 (ko) 1991-11-21
GB8830287D0 (en) 1989-02-22
DE3844154A1 (de) 1990-01-18
US4948993A (en) 1990-08-14
JPH0227591A (ja) 1990-01-30
FR2632439B1 (ko) 1993-02-26

Similar Documents

Publication Publication Date Title
US5223753A (en) Slew rate speed-up circuit
NL8803222A (nl) Verspreid leesbesturingscircuit voor een leesversterker van een geheugenorgaan.
EP0205294B1 (en) Sense amplification scheme for an integrated circuit
CN100407577C (zh) 有源端接电路以及控制外部集成电路端子的阻抗的方法
US7573288B2 (en) Dynamically adjusting operation of a circuit within a semiconductor device
JPH04109494A (ja) 半導体集積回路
US7283413B2 (en) Sense amplifier and method for generating variable reference level
JPH061899B2 (ja) 適応電子バツフアシステム
US6323687B1 (en) Output drivers for integrated-circuit chips with VCCQ supply compensation
EP0459316A2 (en) Semiconductor memory device
EP0814483B1 (en) Read method and circuit for nonvolatile memory cells with an equalizing structure
JP3714762B2 (ja) 遅延回路および半導体記憶装置
US20090058487A1 (en) Delay circuit
US6265921B1 (en) Circuit configuration for shaping slew rate
CN111327191A (zh) 多级充电泵中的级保护
US4875195A (en) Semiconductor device with a reference voltage generator
US6775165B2 (en) Current switching sensor detector
JP3249396B2 (ja) ダイナミック回路
US6215349B1 (en) Capacitive coupled driver circuit
US6265913B1 (en) Load driving circuits having adjustable output drive capability
US5180930A (en) Method and apparatus for reducing the effects of feedback switch charge injection into a plurality of serially connected sample data comparators
US6429991B1 (en) Reducing bias current settling time in magneto-resistive head pre-amplifiers
US5333121A (en) Dynamic semiconductor memory having local read amplifier driver circuits which are optimized with respect to their drive function
US20070109829A1 (en) Dynamic time sequence control device and its method for word matching circuit
US5440257A (en) Edge-detecting pulse generator

Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
BB A search report has been drawn up
BV The patent application has lapsed