KR920022301A - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

Info

Publication number
KR920022301A
KR920022301A KR1019910008735A KR910008735A KR920022301A KR 920022301 A KR920022301 A KR 920022301A KR 1019910008735 A KR1019910008735 A KR 1019910008735A KR 910008735 A KR910008735 A KR 910008735A KR 920022301 A KR920022301 A KR 920022301A
Authority
KR
South Korea
Prior art keywords
semiconductor memory
memory device
switching means
bit line
semiconductor
Prior art date
Application number
KR1019910008735A
Other languages
English (en)
Korean (ko)
Inventor
김창래
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019910008735A priority Critical patent/KR920022301A/ko
Priority to GB9121767A priority patent/GB2256297A/en
Priority to ITMI912808A priority patent/IT1251623B/it
Priority to NL9101772A priority patent/NL9101772A/nl
Priority to DE4135686A priority patent/DE4135686A1/de
Priority to FR9113207A priority patent/FR2677162A1/fr
Priority to CN92100194A priority patent/CN1067325A/zh
Publication of KR920022301A publication Critical patent/KR920022301A/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
KR1019910008735A 1991-05-28 1991-05-28 반도체 기억장치 KR920022301A (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019910008735A KR920022301A (ko) 1991-05-28 1991-05-28 반도체 기억장치
GB9121767A GB2256297A (en) 1991-05-28 1991-10-14 Semi-conductor memory device
ITMI912808A IT1251623B (it) 1991-05-28 1991-10-23 Dispositivo di memoria a semiconduttore
NL9101772A NL9101772A (nl) 1991-05-28 1991-10-23 Halfgeleidende geheugeninrichting.
DE4135686A DE4135686A1 (de) 1991-05-28 1991-10-25 Halbleiter-speicheranordnung
FR9113207A FR2677162A1 (fr) 1991-05-28 1991-10-25 Dispositif de memoire a semiconducteurs.
CN92100194A CN1067325A (zh) 1991-05-28 1992-01-10 半导体记忆装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910008735A KR920022301A (ko) 1991-05-28 1991-05-28 반도체 기억장치

Publications (1)

Publication Number Publication Date
KR920022301A true KR920022301A (ko) 1992-12-19

Family

ID=19315060

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910008735A KR920022301A (ko) 1991-05-28 1991-05-28 반도체 기억장치

Country Status (7)

Country Link
KR (1) KR920022301A (fr)
CN (1) CN1067325A (fr)
DE (1) DE4135686A1 (fr)
FR (1) FR2677162A1 (fr)
GB (1) GB2256297A (fr)
IT (1) IT1251623B (fr)
NL (1) NL9101772A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100445353B1 (ko) * 2000-10-05 2004-08-25 엔이씨 일렉트로닉스 가부시키가이샤 반도체 집적회로
KR100732390B1 (ko) * 2001-12-29 2007-06-27 매그나칩 반도체 유한회사 전류 미러형 누설 전류 보상 회로

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5828610A (en) * 1997-03-31 1998-10-27 Seiko Epson Corporation Low power memory including selective precharge circuit
US6608786B2 (en) 2001-03-30 2003-08-19 Intel Corporation Apparatus and method for a memory storage cell leakage cancellation scheme
JP4251815B2 (ja) * 2002-04-04 2009-04-08 株式会社ルネサステクノロジ 半導体記憶装置
JP3904499B2 (ja) * 2002-09-25 2007-04-11 松下電器産業株式会社 半導体記憶装置
JP2004152092A (ja) * 2002-10-31 2004-05-27 Matsushita Electric Ind Co Ltd 電圧源回路
DE10255102B3 (de) * 2002-11-26 2004-04-29 Infineon Technologies Ag SRAM-Speicherzelle mit Mitteln zur Erzielung eines vom Speicherzustand unabhängigen Leckstroms
US6967875B2 (en) * 2003-04-21 2005-11-22 United Microelectronics Corp. Static random access memory system with compensating-circuit for bitline leakage
CN106558329A (zh) * 2015-09-30 2017-04-05 展讯通信（上海）有限公司 一种单端存储器的差分读取电路及方法
CN106875963B (zh) * 2017-02-21 2019-05-14 中国科学院上海微***与信息技术研究所 一种三维存储器读出电路及读出方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3277750D1 (de) * 1981-09-01 1988-01-07 Fujitsu Ltd Semi-conductor memory circuit
US4467451A (en) * 1981-12-07 1984-08-21 Hughes Aircraft Company Nonvolatile random access memory cell
US4494221A (en) * 1982-03-03 1985-01-15 Inmos Corporation Bit line precharging and equilibrating circuit
JPS61239493A (ja) * 1985-04-05 1986-10-24 Fujitsu Ltd 半導体記憶装置
JPS63131396A (ja) * 1986-11-20 1988-06-03 Ricoh Co Ltd 半導体メモリ装置のセンス回路
JPS63166090A (ja) * 1986-12-26 1988-07-09 Toshiba Corp スタティック型メモリ
JPH0760600B2 (ja) * 1987-08-19 1995-06-28 三菱電機株式会社 同期型記憶装置
JP2542022B2 (ja) * 1987-12-18 1996-10-09 沖電気工業株式会社 電界効果トランジスタ負荷回路
US4975879A (en) * 1989-07-17 1990-12-04 Advanced Micro Devices, Inc. Biasing scheme for FIFO memories

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100445353B1 (ko) * 2000-10-05 2004-08-25 엔이씨 일렉트로닉스 가부시키가이샤 반도체 집적회로
KR100732390B1 (ko) * 2001-12-29 2007-06-27 매그나칩 반도체 유한회사 전류 미러형 누설 전류 보상 회로

Also Published As

Publication number Publication date
ITMI912808A0 (it) 1991-10-23
GB9121767D0 (en) 1991-11-27
DE4135686A1 (de) 1992-12-03
CN1067325A (zh) 1992-12-23
FR2677162A1 (fr) 1992-12-04
ITMI912808A1 (it) 1993-04-23
IT1251623B (it) 1995-05-17
GB2256297A (en) 1992-12-02
NL9101772A (nl) 1992-12-16

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application