CN1067325A - 半导体记忆装置 - Google Patents
半导体记忆装置 Download PDFInfo
- Publication number
- CN1067325A CN1067325A CN92100194A CN92100194A CN1067325A CN 1067325 A CN1067325 A CN 1067325A CN 92100194 A CN92100194 A CN 92100194A CN 92100194 A CN92100194 A CN 92100194A CN 1067325 A CN1067325 A CN 1067325A
- Authority
- CN
- China
- Prior art keywords
- aforementioned
- bit line
- electric crystal
- writing
- require
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 239000013078 crystal Substances 0.000 claims abstract description 67
- 230000015654 memory Effects 0.000 claims description 19
- 230000005669 field effect Effects 0.000 claims description 3
- 230000005055 memory storage Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910008735A KR920022301A (ko) | 1991-05-28 | 1991-05-28 | 반도체 기억장치 |
| KR91-8735 | 1991-05-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1067325A true CN1067325A (zh) | 1992-12-23 |
Family
ID=19315060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN92100194A Pending CN1067325A (zh) | 1991-05-28 | 1992-01-10 | 半导体记忆装置 |
Country Status (7)
| Country | Link |
|---|---|
| KR (1) | KR920022301A (fr) |
| CN (1) | CN1067325A (fr) |
| DE (1) | DE4135686A1 (fr) |
| FR (1) | FR2677162A1 (fr) |
| GB (1) | GB2256297A (fr) |
| IT (1) | IT1251623B (fr) |
| NL (1) | NL9101772A (fr) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100347786C (zh) * | 2002-04-04 | 2007-11-07 | 三菱电机株式会社 | 设有不需要刷新操作的存储器单元的半导体存储装置 |
| CN100350507C (zh) * | 2002-09-25 | 2007-11-21 | 松下电器产业株式会社 | 半导体存储器件 |
| CN100397279C (zh) * | 2002-10-31 | 2008-06-25 | 松下电器产业株式会社 | 漏电流补偿装置及漏电流补偿方法 |
| CN100419914C (zh) * | 2001-03-30 | 2008-09-17 | 英特尔公司 | 用于存储器贮存单元泄漏抵消方案的设备和方法 |
| CN106558329A (zh) * | 2015-09-30 | 2017-04-05 | 展讯通信（上海）有限公司 | 一种单端存储器的差分读取电路及方法 |
| WO2018152952A1 (fr) * | 2017-02-21 | 2018-08-30 | 中国科学院上海微***与信息技术研究所 | Circuit de lecture et procédé de lecture pour mémoire tridimensionnelle |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5828610A (en) * | 1997-03-31 | 1998-10-27 | Seiko Epson Corporation | Low power memory including selective precharge circuit |
| JP3544933B2 (ja) * | 2000-10-05 | 2004-07-21 | Ｎｅｃエレクトロニクス株式会社 | 半導体集積回路 |
| KR100732390B1 (ko) * | 2001-12-29 | 2007-06-27 | 매그나칩 반도체 유한회사 | 전류 미러형 누설 전류 보상 회로 |
| DE10255102B3 (de) * | 2002-11-26 | 2004-04-29 | Infineon Technologies Ag | SRAM-Speicherzelle mit Mitteln zur Erzielung eines vom Speicherzustand unabhängigen Leckstroms |
| US6967875B2 (en) * | 2003-04-21 | 2005-11-22 | United Microelectronics Corp. | Static random access memory system with compensating-circuit for bitline leakage |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3277750D1 (de) * | 1981-09-01 | 1988-01-07 | Fujitsu Ltd | Semi-conductor memory circuit |
| US4467451A (en) * | 1981-12-07 | 1984-08-21 | Hughes Aircraft Company | Nonvolatile random access memory cell |
| US4494221A (en) * | 1982-03-03 | 1985-01-15 | Inmos Corporation | Bit line precharging and equilibrating circuit |
| JPS61239493A (ja) * | 1985-04-05 | 1986-10-24 | Fujitsu Ltd | 半導体記憶装置 |
| JPS63131396A (ja) * | 1986-11-20 | 1988-06-03 | Ricoh Co Ltd | 半導体メモリ装置のセンス回路 |
| JPS63166090A (ja) * | 1986-12-26 | 1988-07-09 | Toshiba Corp | スタティック型メモリ |
| JPH0760600B2 (ja) * | 1987-08-19 | 1995-06-28 | 三菱電機株式会社 | 同期型記憶装置 |
| JP2542022B2 (ja) * | 1987-12-18 | 1996-10-09 | 沖電気工業株式会社 | 電界効果トランジスタ負荷回路 |
| US4975879A (en) * | 1989-07-17 | 1990-12-04 | Advanced Micro Devices, Inc. | Biasing scheme for FIFO memories |
-
1991
- 1991-05-28 KR KR1019910008735A patent/KR920022301A/ko not_active Application Discontinuation
- 1991-10-14 GB GB9121767A patent/GB2256297A/en not_active Withdrawn
- 1991-10-23 IT ITMI912808A patent/IT1251623B/it active IP Right Grant
- 1991-10-23 NL NL9101772A patent/NL9101772A/nl not_active Application Discontinuation
- 1991-10-25 FR FR9113207A patent/FR2677162A1/fr active Pending
- 1991-10-25 DE DE4135686A patent/DE4135686A1/de not_active Withdrawn
-
1992
- 1992-01-10 CN CN92100194A patent/CN1067325A/zh active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100419914C (zh) * | 2001-03-30 | 2008-09-17 | 英特尔公司 | 用于存储器贮存单元泄漏抵消方案的设备和方法 |
| CN100347786C (zh) * | 2002-04-04 | 2007-11-07 | 三菱电机株式会社 | 设有不需要刷新操作的存储器单元的半导体存储装置 |
| CN100350507C (zh) * | 2002-09-25 | 2007-11-21 | 松下电器产业株式会社 | 半导体存储器件 |
| CN100397279C (zh) * | 2002-10-31 | 2008-06-25 | 松下电器产业株式会社 | 漏电流补偿装置及漏电流补偿方法 |
| CN106558329A (zh) * | 2015-09-30 | 2017-04-05 | 展讯通信（上海）有限公司 | 一种单端存储器的差分读取电路及方法 |
| WO2018152952A1 (fr) * | 2017-02-21 | 2018-08-30 | 中国科学院上海微***与信息技术研究所 | Circuit de lecture et procédé de lecture pour mémoire tridimensionnelle |
Also Published As
| Publication number | Publication date |
|---|---|
| ITMI912808A0 (it) | 1991-10-23 |
| GB9121767D0 (en) | 1991-11-27 |
| KR920022301A (ko) | 1992-12-19 |
| DE4135686A1 (de) | 1992-12-03 |
| FR2677162A1 (fr) | 1992-12-04 |
| ITMI912808A1 (it) | 1993-04-23 |
| IT1251623B (it) | 1995-05-17 |
| GB2256297A (en) | 1992-12-02 |
| NL9101772A (nl) | 1992-12-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C01 | Deemed withdrawal of patent application (patent law 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |