KR920015623A - 반도체 소자 및 그 제조방법 - Google Patents

반도체 소자 및 그 제조방법 Download PDF

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KR920015623A
KR920015623A KR1019920000667A KR920000667A KR920015623A KR 920015623 A KR920015623 A KR 920015623A KR 1019920000667 A KR1019920000667 A KR 1019920000667A KR 920000667 A KR920000667 A KR 920000667A KR 920015623 A KR920015623 A KR 920015623A
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layer
insulating layer
conductive
region
etch stopper
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KR1019920000667A
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KR100273070B1 (ko
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레오나르두스 페크 헤르마누스
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프레데릭 얀 스미트
엔.브이.필립스 글로아이람펜파브리켄
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/7681—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H01L27/1485—Frame transfer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946—Charge transfer devices
    • H01L29/66954—Charge transfer devices with an insulated gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/97—Specified etch stop material

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

내용 없음

Description

반도체 소자 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 래스터 전사형의 전하 결합 화상 센서에 대한 선도, 제2도는 본 발명에 따른 클록 라인 및 클록 전극간에 도해적으로 표시된 접속과 제1도에 그려진 소자의 부분 도시도, 제3도는 제2도에 따른 장치의 일부분에 대한 단면도.

Claims (6)

  1. 한 표면에서 적어도 2개의 전도 영역을 지닌 하나 또는 몇개의 회로 요소를 가진 반도체 본체를 포함하며, 그 표면이 절연 층 내의 접촉 윈도우에 의하여 전도 영역과 상호 접속하고 적어도 실제적으로 그 자체의 전체 두께 이상으로 절연 층 속으로 오목 들어간 전도체 트랙이 제공되는 절연층으로 코팅된 반도체 소자에 있어서, 에칭 스토퍼 층은 전도 영역 사이의 삽입된 영역에 제공하고, 상기 층은 절연층의 아래 부분과 전도체 트랙을 분리시키고 절연 층에 관하여 선택적으로 에칭 할 수 있는 물질을 포함하며, 에칭 스토퍼 층이 공통 층으로부터 제조된 일부분의 층 패턴을 형성하는 동안, 상기 패턴은 소자내의 어떤 다른 곳에 또한 부분을 에칭 스토퍼 층 가까이에 포함하는 것을 특징으로 하는 반도체소자.
  2. 제1항에 있어서, 상기 에칭 스토퍼 층은 금속 또는 반도체 물질, 특히 다결정 실리콘을 포함하는 것을 특징으로 하는 반도체 소자.
  3. 선행항 중 어느 한 항에 있어서, 상기 2개의 전도 영역은 서로 나란히 놓여진 게이트 전극의 범위로 하여, 전하 결합 소자의 게이트 전극을 형성하고 공통 배선 층의 일부를 형성하는 것을 특징으로 하는 반도체 소자.
  4. 제3항에 있어서, 상기 게이트 전극은 다결정 실리콘의 제1층으로부터 제조되는 것과, 에칭 스토퍼 층은 절연층의 삽입된 부분에 의해 제1층과 전기적으로 분리된 제2다결정 실리콘 층으로부터 제조되며, 제2다결정 실리콘 층의 두께는 제1다결정 실리콘 층의 것보다 두껍게 하는 것을 특징으로 하는 반도체 소자.
  5. 한 표면에서 적어도 2개의 전도 영역을 지닌 하나 또는 몇개의 회로 요소를 가진 반도체 본체를 포함하며, 그 표면이 절연 층 내의 접촉 윈도우에 의하여 전도 영역과 상호 접속하고 적어도 실제적으로 그 자체의 전체 두께이상으로 절연 층속으로 오목 들어간 전도체 트랙이 형성되는 절연층으로 코팅된 반도체 소자를 제조하는 방법에 있어서, 전도 영역이 제공되어 진 후, 절연 층은 그 자체의 두께의 제1부분 위에 형성되며, 절연 층에 관하여 선택적으로 에칭할 수 있는 전도 물질의 에칭 스토퍼 층은 전도 영역 사이에 놓여진 중간 영역내의 상기 부분상에 형성되며, 그 뒤에 절연 층은 그 자체의 두께의 제2부분상에 제공되며, 그리고 그 절연 층은 형성될 전도 트랙의 영역에서 에칭 처리되어지며, 그동안 상기 중간 영역에서 에칭 스토퍼 층에 이르기 까지와 접촉 윈도우의 영역에서 전도 영역에 이르기 까지 제거되며, 그리고 그와 같은 형태가 얻어진 후 전도 층으로 덮여지며, 그로부터 오목 들어간 전도 트랙은 다시 에칭함으로써 형성되는 것을 특징으로 하는 반도체 소자의 제조방법.
  6. 제5항에 있어서, 접촉 윈도우의 중간 영역 및 영역에서 절연 층을 제거하기 위한 에칭 처리는 이방성적으로 수행되는 것을 특징으로 하는 반도체 소자의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920000667A 1991-01-21 1992-01-18 반도체 소자 및 그 제조방법 KR100273070B1 (ko)

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Application Number Priority Date Filing Date Title
NL9100094A NL9100094A (nl) 1991-01-21 1991-01-21 Halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
NL9100094 1991-01-21

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KR100273070B1 KR100273070B1 (ko) 2000-12-01

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US (2) US5396092A (ko)
EP (1) EP0496443B1 (ko)
JP (1) JP3048459B2 (ko)
KR (1) KR100273070B1 (ko)
DE (1) DE69226887T2 (ko)
NL (1) NL9100094A (ko)

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EP0496443A1 (en) 1992-07-29
JPH04302472A (ja) 1992-10-26
DE69226887T2 (de) 1999-04-08
NL9100094A (nl) 1992-08-17
EP0496443B1 (en) 1998-09-09
US5536678A (en) 1996-07-16
KR100273070B1 (ko) 2000-12-01
DE69226887D1 (de) 1998-10-15
US5396092A (en) 1995-03-07
JP3048459B2 (ja) 2000-06-05

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