KR880004580A - 전력 mosfet와 제어회로가 통합된 반도체소자 - Google Patents

전력 mosfet와 제어회로가 통합된 반도체소자 Download PDF

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KR880004580A
KR880004580A KR870010532A KR870010532A KR880004580A KR 880004580 A KR880004580 A KR 880004580A KR 870010532 A KR870010532 A KR 870010532A KR 870010532 A KR870010532 A KR 870010532A KR 880004580 A KR880004580 A KR 880004580A
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semiconductor device
control circuit
semiconductor
semiconductor body
power mosfet
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KR870010532A
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KR930009475B1 (ko
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아이징거 요셉
라이폴드 루드비히
티한니 제뇌
베버 롤란드
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휘티시, 네테부쉬.
지멘스 악티엔게젤샤프트
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electronic Switches (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)

Abstract

내용 없음

Description

전력 MOSFET와 제어회로가 통합된 반도체소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1의 예시적인 실시예를 나타내는 간략화된 측면도.
제2도는 제1도에 보인 실시예의 평면도.
제3도는 본 발명의 제2실시예를 나타내는 평면도.

Claims (10)

  1. 전력 MOSFET 의 반도체 몸체의 어느하나의 주표면에 배치되고 절연층을 통해 반도체 몸체에 기계적으로 연결된 MOSFET 제어용 반도체 제어회로가 전력 MOSFET 와 별개로 집적되어 있는 것을 특징으로 하는 전력 MOSFET 와 제어회로가 통합된 반도체소자.
  2. 제1항에 있어서, 절연층이 전력 MOSFET 의 반도체 몸체위에 배치되어 있는 것을 특징으로 하는 반도체소자.
  3. 제1항에 있어서, 절연층이 제어회로의 반도체몸체위에 배치되어 있는 것을 특징으로하는 반도체소자.
  4. 상기항중 어느한항에 있어서, 상기 2개의 반도체몸체는 점착물에 의해 서로 고정되어 지는 것을 특징으로 하는 반도체소자.
  5. 제4항에 있어서, 상기 점착물은 절연성점착제인 것을 특징으로 하는 반도체소자.
  6. 상기항중 어느 한항에 있어서, 제어회로의 반도체몸체는 전력 MOSFET 의 반도체몸체위의 하나의 주표면에 배치되고, 상기 반도체 몸체의 다른 주표면은 방열기에 고정되는 것을 특징으로 하는 반도체소자.
  7. 상기항중 어느한 항에 있어서, 제어회로의 반도체몸체는 전력 MOSFET 의 반도체몸체와 열접촉되며, 제어회로는 온도가 예정된 열한계치에 도달할 때 신호를 발생하는 스위치에 전기적으로 연결된 열감지소자를 포함하는 것을 특징으로 하는 반도체소자.
  8. 상기항중 어느한 항에 있어서, 상기 제어회로는 자기절연 CMOS 제조기술로써 고농도로 도프된 기판위에 구성되고, 전력 MOSFET 와 떨어져 있는 그 반도체 몸체의 측면은 기판에 전기적으로 연결되어 있는 접점이 설치되어 있는 것을 특징으로 하는 반도체소자.
  9. 제8항에 있어서, 상기 접점은 기판과 동일한 도전성을 갖는 고농도로 도프된 지역위에 배치되는 것을 특징으로 하는 반도체소자.
  10. 제1도 및 제2도를 참고로 설명되고 또한 제3도내지 5도의 어느하나에 따라 변경된 전력 MOSFET 와 별개로 집적된 제어회로를 포함하는 반도체소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870010532A 1986-09-23 1987-09-23 전력 모스페트(mosfet)와 제어회로가 통합된 반도체소자 KR930009475B1 (ko)

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DE3632199.0 1986-09-23
DE3632199 1986-09-23
DEP3632199 1986-09-23

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KR930009475B1 KR930009475B1 (ko) 1993-10-04

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US (1) US4947234A (ko)
EP (1) EP0262530B1 (ko)
JP (1) JP2566207B2 (ko)
KR (1) KR930009475B1 (ko)
DE (1) DE3786314D1 (ko)
MY (1) MY102712A (ko)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8808805U1 (de) * 1988-07-08 1988-09-01 Siemens AG, 1000 Berlin und 8000 München Leistungs-Mosfet mit Temperatursensor
EP0379616A1 (de) * 1989-01-26 1990-08-01 Siemens Aktiengesellschaft Halbleiterbauelement mit übereinander montierten Halbleiterkörpern
JP2876773B2 (ja) * 1990-10-22 1999-03-31 セイコーエプソン株式会社 プログラム命令語長可変型計算装置及びデータ処理装置
DE4108154A1 (de) * 1991-03-14 1992-09-17 Telefunken Electronic Gmbh Elektronische baugruppe und verfahren zur herstellung von elektronischen baugruppen
JPH05308107A (ja) * 1991-07-01 1993-11-19 Sumitomo Electric Ind Ltd 半導体装置及びその製作方法
US5170312A (en) * 1991-11-04 1992-12-08 Motorola, Inc. Protection circuit on a lead of a power device
FR2690274B1 (fr) * 1992-04-15 1997-08-22 Motorola Semiconducteurs Boitier pour dispositif a semiconducteur et procede de formation de boitier pour dispositif a semiconducteur.
US6147393A (en) * 1993-05-05 2000-11-14 Ixys Corporation Isolated multi-chip devices
JP2938344B2 (ja) * 1994-05-15 1999-08-23 株式会社東芝 半導体装置
JP3228093B2 (ja) * 1995-06-28 2001-11-12 富士電機株式会社 高耐圧ｉｃ
DE59709662D1 (de) * 1996-05-21 2003-05-08 Infineon Technologies Ag MOSFET mit Temperaturschutz
DE19633920C1 (de) * 1996-08-22 1997-10-09 Siemens Ag Leistungs-Halbleiterschalter
DE19635582C1 (de) * 1996-09-02 1998-02-19 Siemens Ag Leistungs-Halbleiterbauelement für Brückenschaltungen mit High- bzw. Low-Side-Schaltern
DE19728281C1 (de) * 1997-07-02 1998-10-29 Siemens Ag Zwei-Chip-Leistungs-IC mit verbessertem Kurzschlußverhalten
EP0903780A3 (en) * 1997-09-19 1999-08-25 Texas Instruments Incorporated Method and apparatus for a wire bonded package for integrated circuits
FR2776462B1 (fr) * 1998-03-19 2000-05-19 Schneider Electric Sa Module de composants electroniques de puissance
US6410989B1 (en) * 1999-01-04 2002-06-25 International Rectifier Corporation Chip-scale package
KR100335481B1 (ko) * 1999-09-13 2002-05-04 김덕중 멀티 칩 패키지 구조의 전력소자
US6798061B2 (en) * 1999-11-15 2004-09-28 Koninklijke Philips Electronics N.V. Multiple semiconductor chip (multi-chip) module for use in power applications
JP2001308262A (ja) * 2000-04-26 2001-11-02 Mitsubishi Electric Corp 樹脂封止ｂｇａ型半導体装置
JP4146607B2 (ja) 2000-07-28 2008-09-10 三菱電機株式会社 パワーモジュール
DE10038968A1 (de) * 2000-08-10 2002-03-07 Infineon Technologies Ag Schaltungsanordnung mit wenigstens zwei Halbleiterkörpern und einem Kühlkörper
EP1231635A1 (en) * 2001-02-09 2002-08-14 STMicroelectronics S.r.l. Method for manufacturing an electronic power device and a diode in a same package
KR100401020B1 (ko) 2001-03-09 2003-10-08 앰코 테크놀로지 코리아 주식회사 반도체칩의 스택킹 구조 및 이를 이용한 반도체패키지
JP4118143B2 (ja) 2001-05-18 2008-07-16 三洋電機株式会社 電源回路装置
JP4651652B2 (ja) * 2001-05-18 2011-03-16 三洋電機株式会社 電源回路装置
US6649978B2 (en) 2001-06-19 2003-11-18 Koninklijke Philips Electronics N.V. Semiconductor module having multiple semiconductor chips
EP1470586B1 (de) * 2002-01-30 2014-01-15 ebm-papst St. Georgen GmbH & Co. KG Leistungs-halbleiter, und verfahen zu seiner herstellung
KR20030083306A (ko) * 2002-04-20 2003-10-30 삼성전자주식회사 메모리 카드
DE10323007B4 (de) 2003-05-21 2005-10-20 Infineon Technologies Ag Halbleiteranordnung
US20060098363A1 (en) * 2004-11-09 2006-05-11 Fultec Semiconductors, Inc. Integrated transient blocking unit compatible with very high voltages
DE102004056984A1 (de) * 2004-11-25 2006-06-08 Siemens Ag Stromrichteranordnung
US7400047B2 (en) * 2004-12-13 2008-07-15 Agere Systems Inc. Integrated circuit with stacked-die configuration utilizing substrate conduction
US7680622B2 (en) * 2005-04-13 2010-03-16 Freescale Semiconductor, Inc. Protection of an integrated circuit and method thereof
US7675180B1 (en) 2006-02-17 2010-03-09 Amkor Technology, Inc. Stacked electronic component package having film-on-wire spacer
US20080237824A1 (en) * 2006-02-17 2008-10-02 Amkor Technology, Inc. Stacked electronic component package having single-sided film spacer
US7633144B1 (en) 2006-05-24 2009-12-15 Amkor Technology, Inc. Semiconductor package
JP4858290B2 (ja) * 2006-06-05 2012-01-18 株式会社デンソー 負荷駆動装置
US20080131998A1 (en) * 2006-12-01 2008-06-05 Hem Takiar Method of fabricating a film-on-wire bond semiconductor device
US20080128879A1 (en) * 2006-12-01 2008-06-05 Hem Takiar Film-on-wire bond semiconductor device
US8405200B2 (en) * 2007-05-29 2013-03-26 Kyocera Corporation Electronic-component-housing package and electronic device
JP4940064B2 (ja) 2007-08-28 2012-05-30 ルネサスエレクトロニクス株式会社 半導体装置
US7884444B2 (en) * 2008-07-22 2011-02-08 Infineon Technologies Ag Semiconductor device including a transformer on chip
JP2010171169A (ja) * 2009-01-22 2010-08-05 Sanken Electric Co Ltd 半導体モジュール及びその制御方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128281A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Insulated gate field effect type semiconductor device for large power
US4314270A (en) * 1977-12-02 1982-02-02 Mitsubishi Denki Kabushiki Kaisha Hybrid thick film integrated circuit heat dissipating and grounding assembly
FR2507353B1 (fr) * 1981-06-05 1985-08-30 Cepe Cellule de couplage thermique entre un element calorifique et un element thermo-sensible et enceinte thermostatee pour cristal piezo-electrique comportant une telle cellule
US4500905A (en) * 1981-09-30 1985-02-19 Tokyo Shibaura Denki Kabushiki Kaisha Stacked semiconductor device with sloping sides
FR2515428A1 (fr) * 1981-10-27 1983-04-29 Thomson Csf Boitier comportant au moins deux circuits integres
JPS59202658A (ja) * 1983-05-02 1984-11-16 Hitachi Ltd Ｍｏｓ形半導体集積回路
JPS6070752A (ja) * 1983-09-26 1985-04-22 Fujitsu Ltd 半導体装置の製造方法
JPS60202658A (ja) * 1984-03-26 1985-10-14 Shin Kobe Electric Mach Co Ltd リチウム−オキシハライド電池の端子の封口方法
EP0208970B1 (de) * 1985-07-09 1990-05-23 Siemens Aktiengesellschaft MOSFET mit Temperaturschutz
DD240807A1 (de) * 1985-09-03 1986-11-12 Elektroprojekt Anlagenbau Veb Verfahren zur ueberwachung von elektrischen antrieben
US4667265A (en) * 1985-12-20 1987-05-19 National Semiconductor Corporation Adaptive thermal shutdown circuit
US4730228A (en) * 1986-03-21 1988-03-08 Siemens Aktiengesellschaft Overtemperature detection of power semiconductor components

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Publication number Publication date
JPS6387758A (ja) 1988-04-19
KR930009475B1 (ko) 1993-10-04
MY102712A (en) 1992-09-30
EP0262530B1 (de) 1993-06-23
US4947234A (en) 1990-08-07
DE3786314D1 (de) 1993-07-29
EP0262530A1 (de) 1988-04-06
JP2566207B2 (ja) 1996-12-25

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