KR880004580A - 전력 mosfet와 제어회로가 통합된 반도체소자 - Google Patents
전력 mosfet와 제어회로가 통합된 반도체소자 Download PDFInfo
- Publication number
- KR880004580A KR880004580A KR870010532A KR870010532A KR880004580A KR 880004580 A KR880004580 A KR 880004580A KR 870010532 A KR870010532 A KR 870010532A KR 870010532 A KR870010532 A KR 870010532A KR 880004580 A KR880004580 A KR 880004580A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- control circuit
- semiconductor
- semiconductor body
- power mosfet
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 24
- 239000000853 adhesive Substances 0.000 claims 3
- 230000001070 adhesive effect Effects 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electronic Switches (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Ignition Installations For Internal Combustion Engines (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1의 예시적인 실시예를 나타내는 간략화된 측면도.
제2도는 제1도에 보인 실시예의 평면도.
제3도는 본 발명의 제2실시예를 나타내는 평면도.
Claims (10)
- 전력 MOSFET 의 반도체 몸체의 어느하나의 주표면에 배치되고 절연층을 통해 반도체 몸체에 기계적으로 연결된 MOSFET 제어용 반도체 제어회로가 전력 MOSFET 와 별개로 집적되어 있는 것을 특징으로 하는 전력 MOSFET 와 제어회로가 통합된 반도체소자.
- 제1항에 있어서, 절연층이 전력 MOSFET 의 반도체 몸체위에 배치되어 있는 것을 특징으로 하는 반도체소자.
- 제1항에 있어서, 절연층이 제어회로의 반도체몸체위에 배치되어 있는 것을 특징으로하는 반도체소자.
- 상기항중 어느한항에 있어서, 상기 2개의 반도체몸체는 점착물에 의해 서로 고정되어 지는 것을 특징으로 하는 반도체소자.
- 제4항에 있어서, 상기 점착물은 절연성점착제인 것을 특징으로 하는 반도체소자.
- 상기항중 어느 한항에 있어서, 제어회로의 반도체몸체는 전력 MOSFET 의 반도체몸체위의 하나의 주표면에 배치되고, 상기 반도체 몸체의 다른 주표면은 방열기에 고정되는 것을 특징으로 하는 반도체소자.
- 상기항중 어느한 항에 있어서, 제어회로의 반도체몸체는 전력 MOSFET 의 반도체몸체와 열접촉되며, 제어회로는 온도가 예정된 열한계치에 도달할 때 신호를 발생하는 스위치에 전기적으로 연결된 열감지소자를 포함하는 것을 특징으로 하는 반도체소자.
- 상기항중 어느한 항에 있어서, 상기 제어회로는 자기절연 CMOS 제조기술로써 고농도로 도프된 기판위에 구성되고, 전력 MOSFET 와 떨어져 있는 그 반도체 몸체의 측면은 기판에 전기적으로 연결되어 있는 접점이 설치되어 있는 것을 특징으로 하는 반도체소자.
- 제8항에 있어서, 상기 접점은 기판과 동일한 도전성을 갖는 고농도로 도프된 지역위에 배치되는 것을 특징으로 하는 반도체소자.
- 제1도 및 제2도를 참고로 설명되고 또한 제3도내지 5도의 어느하나에 따라 변경된 전력 MOSFET 와 별개로 집적된 제어회로를 포함하는 반도체소자.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3632199.0 | 1986-09-23 | ||
DE3632199 | 1986-09-23 | ||
DEP3632199 | 1986-09-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880004580A true KR880004580A (ko) | 1988-06-07 |
KR930009475B1 KR930009475B1 (ko) | 1993-10-04 |
Family
ID=6310098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870010532A KR930009475B1 (ko) | 1986-09-23 | 1987-09-23 | 전력 모스페트(mosfet)와 제어회로가 통합된 반도체소자 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4947234A (ko) |
EP (1) | EP0262530B1 (ko) |
JP (1) | JP2566207B2 (ko) |
KR (1) | KR930009475B1 (ko) |
DE (1) | DE3786314D1 (ko) |
MY (1) | MY102712A (ko) |
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DE8808805U1 (de) * | 1988-07-08 | 1988-09-01 | Siemens AG, 1000 Berlin und 8000 München | Leistungs-Mosfet mit Temperatursensor |
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JP2938344B2 (ja) * | 1994-05-15 | 1999-08-23 | 株式会社東芝 | 半導体装置 |
JP3228093B2 (ja) * | 1995-06-28 | 2001-11-12 | 富士電機株式会社 | 高耐圧ic |
DE59709662D1 (de) * | 1996-05-21 | 2003-05-08 | Infineon Technologies Ag | MOSFET mit Temperaturschutz |
DE19633920C1 (de) * | 1996-08-22 | 1997-10-09 | Siemens Ag | Leistungs-Halbleiterschalter |
DE19635582C1 (de) * | 1996-09-02 | 1998-02-19 | Siemens Ag | Leistungs-Halbleiterbauelement für Brückenschaltungen mit High- bzw. Low-Side-Schaltern |
DE19728281C1 (de) * | 1997-07-02 | 1998-10-29 | Siemens Ag | Zwei-Chip-Leistungs-IC mit verbessertem Kurzschlußverhalten |
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FR2776462B1 (fr) * | 1998-03-19 | 2000-05-19 | Schneider Electric Sa | Module de composants electroniques de puissance |
US6410989B1 (en) * | 1999-01-04 | 2002-06-25 | International Rectifier Corporation | Chip-scale package |
KR100335481B1 (ko) * | 1999-09-13 | 2002-05-04 | 김덕중 | 멀티 칩 패키지 구조의 전력소자 |
US6798061B2 (en) * | 1999-11-15 | 2004-09-28 | Koninklijke Philips Electronics N.V. | Multiple semiconductor chip (multi-chip) module for use in power applications |
JP2001308262A (ja) * | 2000-04-26 | 2001-11-02 | Mitsubishi Electric Corp | 樹脂封止bga型半導体装置 |
JP4146607B2 (ja) | 2000-07-28 | 2008-09-10 | 三菱電機株式会社 | パワーモジュール |
DE10038968A1 (de) * | 2000-08-10 | 2002-03-07 | Infineon Technologies Ag | Schaltungsanordnung mit wenigstens zwei Halbleiterkörpern und einem Kühlkörper |
EP1231635A1 (en) * | 2001-02-09 | 2002-08-14 | STMicroelectronics S.r.l. | Method for manufacturing an electronic power device and a diode in a same package |
KR100401020B1 (ko) | 2001-03-09 | 2003-10-08 | 앰코 테크놀로지 코리아 주식회사 | 반도체칩의 스택킹 구조 및 이를 이용한 반도체패키지 |
JP4118143B2 (ja) | 2001-05-18 | 2008-07-16 | 三洋電機株式会社 | 電源回路装置 |
JP4651652B2 (ja) * | 2001-05-18 | 2011-03-16 | 三洋電機株式会社 | 電源回路装置 |
US6649978B2 (en) | 2001-06-19 | 2003-11-18 | Koninklijke Philips Electronics N.V. | Semiconductor module having multiple semiconductor chips |
EP1470586B1 (de) * | 2002-01-30 | 2014-01-15 | ebm-papst St. Georgen GmbH & Co. KG | Leistungs-halbleiter, und verfahen zu seiner herstellung |
KR20030083306A (ko) * | 2002-04-20 | 2003-10-30 | 삼성전자주식회사 | 메모리 카드 |
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US20060098363A1 (en) * | 2004-11-09 | 2006-05-11 | Fultec Semiconductors, Inc. | Integrated transient blocking unit compatible with very high voltages |
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US7675180B1 (en) | 2006-02-17 | 2010-03-09 | Amkor Technology, Inc. | Stacked electronic component package having film-on-wire spacer |
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US7633144B1 (en) | 2006-05-24 | 2009-12-15 | Amkor Technology, Inc. | Semiconductor package |
JP4858290B2 (ja) * | 2006-06-05 | 2012-01-18 | 株式会社デンソー | 負荷駆動装置 |
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-
1987
- 1987-09-18 JP JP62234682A patent/JP2566207B2/ja not_active Expired - Lifetime
- 1987-09-18 DE DE8787113707T patent/DE3786314D1/de not_active Expired - Lifetime
- 1987-09-18 EP EP87113707A patent/EP0262530B1/de not_active Expired - Lifetime
- 1987-09-22 US US07/099,577 patent/US4947234A/en not_active Expired - Lifetime
- 1987-09-23 KR KR1019870010532A patent/KR930009475B1/ko not_active IP Right Cessation
- 1987-10-15 MY MYPI87002927A patent/MY102712A/en unknown
Also Published As
Publication number | Publication date |
---|---|
JPS6387758A (ja) | 1988-04-19 |
KR930009475B1 (ko) | 1993-10-04 |
MY102712A (en) | 1992-09-30 |
EP0262530B1 (de) | 1993-06-23 |
US4947234A (en) | 1990-08-07 |
DE3786314D1 (de) | 1993-07-29 |
EP0262530A1 (de) | 1988-04-06 |
JP2566207B2 (ja) | 1996-12-25 |
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