JP2001308262A - 樹脂封止ｂｇａ型半導体装置 - Google Patents

樹脂封止ｂｇａ型半導体装置

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Publication number
JP2001308262A
JP2001308262A JP2000125579A JP2000125579A JP2001308262A JP 2001308262 A JP2001308262 A JP 2001308262A JP 2000125579 A JP2000125579 A JP 2000125579A JP 2000125579 A JP2000125579 A JP 2000125579A JP 2001308262 A JP2001308262 A JP 2001308262A
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JP
Japan
Prior art keywords
chip
resin
semiconductor device
type semiconductor
sealed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000125579A
Other languages
English (en)
Other versions
JP2001308262A5 (ja
Inventor
Takashi Kondo
隆 近藤
Koji Bando
晃司 板東
Jun Shibata
潤 柴田
Kazuko Narutaki
和子 鳴瀧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2000125579A priority Critical patent/JP2001308262A/ja
Priority to US09/781,237 priority patent/US6545365B2/en
Priority to KR1020010021691A priority patent/KR20010099722A/ko
Publication of JP2001308262A publication Critical patent/JP2001308262A/ja
Publication of JP2001308262A5 publication Critical patent/JP2001308262A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/0651—Wire or wire-like electrical connections from device to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06575—Auxiliary carrier between devices, the carrier having no electrical connection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】 【課題】 ワイヤとチップとの電気的接触、及びフィラ
の侵入を回避することを目的とする。 【解決手段】 第１のチップ３を基板２に組立てた後、
第１のチップ３のワイヤ３ａ端を覆い、かつ第１のチッ
プ３と第２のチップ６のダイボンド間に空間を生じない
ように第２のチップ６をダイボンディングする。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】この発明は、複数のチップを
高密度に収納するため、第１のチップ上に第２のチップ
を載置し、スタック（積層）間の空間をなくすようにし
た樹脂封止ＢＧＡ（Ｂａｌｌ Ｇｒｉｄｅｄ Ａｒｒａ
ｙ）型半導体装置に関するものである。
【０００２】
【従来の技術】図５は従来の樹脂封止ＢＧＡ型半導体装
置を示す断面図であり、図において、１１はボール、１
２はボール１１上に載置された基板、１３は基板１２上
に載置された第１のチップ、１４は第１のチップ１３上
に載置された第２のチップ、１３ａ，１４ａはそれぞれ
第１のチップ１３，第２のチップ１４にそれぞれ接続さ
れたワイヤ、１５は全体を覆う封止樹脂である。このよ
うにして、チップサイズの異なる２つのチップを重ねて
実装し、１つのパッケージに組み込むようにして構成す
るものである。
【０００３】
【発明が解決しようとする課題】従来の樹脂封止ＢＧＡ
型半導体装置は以上のように構成されているので、スタ
ック型の場合、第１のチップのワイヤと第２のチップの
電気的接触が生じるという問題点があった。又、第１の
チップと第２のチップ間に生じた空間への封止樹脂中に
配合されたフィラの侵入による第１のチップへのダメー
ジが生じるという問題点もあった。
【０００４】この発明は上記のような問題点を解消する
ためになされたものであり、ワイヤとチップとの電気的
接触、及びフィラの侵入による第１のチップへのダメー
ジを回避し、同一パッケージにほぼ同一のサイズのチッ
プを複数個重ねて実装することにより、パッケージの外
形は同じで機能を２倍以上にすることを目的とする。
【０００５】
【課題を解決するための手段】この発明の請求項１に係
る樹脂封止ＢＧＡ型半導体装置は、ボール上に基板を載
置するとともに、基板上に複数のチップを重ねて収納
し、全体を封止樹脂で覆うものであって、下部のチップ
に接続されたワイヤを覆い、かつ下部のチップと上部の
チップの間に空間を生じないように固着用接着層を塗布
したものである。
【０００６】この発明の請求項２に係る樹脂封止ＢＧＡ
型半導体装置は、固着用接着層と上部のチップとの間に
絶縁テープを設けたものである。
【０００７】
【発明の実施の形態】実施の形態１．以下、この発明の
一実施形態を図に基づいて説明する。図１はこの発明の
実施の形態１による樹脂封止ＢＧＡ型半導体装置を示す
断面図であり、図において、１はボール、２はボール１
上に載置された基板、３は基板２上に固定材４を介して
載置された第１のチップ、５はチップのオーバコート
層、６はダイボンド樹脂からなる固定用接着層７を介し
て設けられた第２のチップ、３ａ，６ａはそれぞれ第１
のチップ３，第２のチップ６に接続されたワイヤ、８は
全体を覆う封止樹脂である。
【０００８】第１のチップ３を組立てた後、第１のチッ
プ３のワイヤ３ａを覆い、かつ第１のチップ３と第２チ
ップ６の間に空間をなくするに十分な量のダイボンド樹
脂を塗布する。そして第２のチップ６を第１のチップ３
の上に固定し、第１のチップ３のワイヤ３ａと第２のチ
ップ６の電気的接触を回避できるようにするとともに、
第１のチップ３と第２のチップ６との空間に封止樹脂が
侵入することを防止できるようにする。
【０００９】これにより、ほぼ同一のサイズのチップを
複数個収納した多機能の半導体装置の提供が可能であ
る。また、第１のチップ３と第２のチップ６の間に封止
樹脂が侵入することを防止したことで、フィラの影響に
よる第１のチップ３の故障を回避できることから、極め
て高い信頼性を有する、スタック型の樹脂封止ＢＧＡ
（Ｂａｌｌ Ｇｒｉｄｅｄ Ａｒｒａｙ）型半導体装置
の提供が可能となった。
【００１０】図２は第１のチップ３と第２チップ６との
接着端面部分を示す拡大側面図、図３は接着層７の後退
量と相対的不良発生率との関係を示す図であり、図にお
いて、Ｌは接着層７の後退量、Ａはコントロール領域、
Ｂは実用的なレベルの不良発生率である。第２のチップ
６を第１のチップ３に固定するダイボンド樹脂は、実質
的に図３に詳細に示すように、多少の後退は信頼性上何
ら問題は認められないが、望ましくは後退量Ｌは、０.
５ｍｍ以下に抑えるべきである。
【００１１】実施の形態２．図４はこの発明の実施の形
態２による樹脂封止ＢＧＡ型半導体装置を示す断面図で
あり、図において、第１のチップ３のワイヤ３ａを覆う
ように、固着用接着層７に、絶縁テープ９をはさんで、
第２のチップ６をダイボンドするものであり、これによ
り、上下に重ねた第１のチップ３と第２のチップ６が電
気的に接触することを防止できる。ただし、この場合
は、先に例示した封止樹脂の侵入を防止することが難し
いので、固着用接着層７の厚さは、かなり厚くする必要
がある。
【００１２】又、固着用接着層７の厚さは、使用される
封止樹脂中のフィラのサイズと深い関係があり、実験で
は図２におけるギャップＧは、フィラサイズの２倍程度
が実用的な値であることが確かめられている。フィラサ
イズは小さい程、信頼性上有利であるが、封止樹脂の製
造コストが高くなり、実用的でなくなる。
【００１３】
【発明の効果】この発明の請求項１に係る樹脂封止ＢＧ
Ａ型半導体装置によれば、ボール上に基板を載置すると
ともに、基板上に複数のチップを重ねて収納し、全体を
封止樹脂で覆うものであって、下部のチップに接続され
たワイヤを覆い、かつ下部のチップと上部のチップの間
に空間を生じないように固着用接着層を塗布したので、
チップとワイヤとの電気的接触を回避できるとともに、
チップ間の空間に封止樹脂が侵入するのを防止すること
ができる。
【００１４】この発明の請求項２に係る樹脂封止ＢＧＡ
型半導体装置によれば、固着用接着層と上部のチップと
の間に絶縁テープを設けたので、チップ同士が電気的に
接触することを防止することができる。
【図面の簡単な説明】
【図１】 この発明の実施の形態１による樹脂封止ＢＧ
Ａ型半導体装置を示す断面図である。
【図２】 この発明の実施の形態１による樹脂封止ＢＧ
Ａ型半導体装置を示す拡大側面図である。
【図３】 後退量と不良発生率との関係を示す図であ
る。
【図４】 この発明の実施の形態２による樹脂封止ＢＧ
Ａ型半導体装置を示す断面図である。
【図５】 従来の樹脂封止ＢＧＡ型半導体装置を示す断
面図である。
【符号の説明】
１ ボール、２ 基板、３，６ チップ、８ 封止樹
脂、９ 絶縁テープ。
───────────────────────────────────────────────────── フロントページの続き (72)発明者 柴田 潤 東京都千代田区丸の内二丁目２番３号 三 菱電機株式会社内 (72)発明者 鳴瀧 和子 東京都千代田区丸の内二丁目２番３号 三 菱電機株式会社内

Claims (2)

    【特許請求の範囲】
  1. 【請求項１】 ボール上に基板を載置するとともに、上
    記基板上に複数のチップを重ねて収納し、全体を封止樹
    脂で覆う樹脂封止ＢＧＡ型半導体装置において、下部の
    チップに接続されたワイヤを覆い、かつ下部のチップと
    上部のチップの間に空間を生じないように固着用接着層
    を塗布したことを特徴とする樹脂封止ＢＧＡ型半導体装
    置。
  2. 【請求項２】 固着用接着層と上部のチップとの間に絶
    縁テープを設けたことを特徴とする請求項１記載の樹脂
    封止ＢＧＡ型半導体装置。
JP2000125579A 2000-04-26 2000-04-26 樹脂封止ｂｇａ型半導体装置 Pending JP2001308262A (ja)

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US09/781,237 US6545365B2 (en) 2000-04-26 2001-02-13 Resin-sealed chip stack type semiconductor device
KR1020010021691A KR20010099722A (ko) 2000-04-26 2001-04-23 수지 봉지 칩 적층형 반도체 장치

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