KR900004040A - 반도체 집적회로 디바이스 - Google Patents
반도체 집적회로 디바이스 Download PDFInfo
- Publication number
- KR900004040A KR900004040A KR1019890011638A KR890011638A KR900004040A KR 900004040 A KR900004040 A KR 900004040A KR 1019890011638 A KR1019890011638 A KR 1019890011638A KR 890011638 A KR890011638 A KR 890011638A KR 900004040 A KR900004040 A KR 900004040A
- Authority
- KR
- South Korea
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit devices
- region
- gate electrode
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000012212 insulator Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 제1실시예의 CMOS 디바이스의 주요부분을 도시한 평면도.
제2도는 선 Ⅱ-Ⅱ를 따라 절취하여 도시한 제1도의 단면도.
제3도는 선 Ⅲ-Ⅲ을 따라 절취한 도시한 제1도의 단면도.
Claims (1)
- 보호 영역이 제1소자 영역을 둘러싸도록 제1소자 영역과 제2소자 영역사이에 형성되고, 게이트 전극이 상기 보호영역을 교차하도록 제공되며, 상기 보호영역이 게이트 전극 바로 밑일지라도 연속적으로 형성되며, 상기 게이트 전극 바로 밑의 절연체 막이 비교적 두꺼운 것을 특징으로 하는 반도체 집적회로 디바이스.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-204411 | 1988-08-17 | ||
JP63-20441 | 1988-08-17 | ||
JP63204411A JPH0252463A (ja) | 1988-08-17 | 1988-08-17 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900004040A true KR900004040A (ko) | 1990-03-27 |
KR0148565B1 KR0148565B1 (ko) | 1998-10-15 |
Family
ID=16490100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890011638A KR0148565B1 (ko) | 1988-08-17 | 1989-08-16 | 반도체 집적회로 디바이스 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH0252463A (ko) |
KR (1) | KR0148565B1 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6808950B2 (en) | 1992-12-17 | 2004-10-26 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing the device |
US6677614B1 (en) | 1992-12-17 | 2004-01-13 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing the device |
KR0149256B1 (ko) * | 1995-08-25 | 1998-10-01 | 김주용 | 씨모스 트랜지스터 제조방법 |
KR101098338B1 (ko) * | 2005-04-22 | 2011-12-26 | 삼성전자주식회사 | 광학 패키지, 광학 렌즈 및 이를 갖는 백라이트 어셈블리및 표시장치 |
KR101229874B1 (ko) | 2005-04-22 | 2013-02-05 | 삼성디스플레이 주식회사 | 광학 렌즈와, 이를 갖는 광학 패키지, 백라이트 어셈블리및 표시장치 |
-
1988
- 1988-08-17 JP JP63204411A patent/JPH0252463A/ja active Pending
-
1989
- 1989-08-16 KR KR1019890011638A patent/KR0148565B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR0148565B1 (ko) | 1998-10-15 |
JPH0252463A (ja) | 1990-02-22 |
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E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120427 Year of fee payment: 15 |
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EXPY | Expiration of term |