JP4651652B2 - 電源回路装置 - Google Patents
電源回路装置 Download PDFInfo
- Publication number
- JP4651652B2 JP4651652B2 JP2007266916A JP2007266916A JP4651652B2 JP 4651652 B2 JP4651652 B2 JP 4651652B2 JP 2007266916 A JP2007266916 A JP 2007266916A JP 2007266916 A JP2007266916 A JP 2007266916A JP 4651652 B2 JP4651652 B2 JP 4651652B2
- Authority
- JP
- Japan
- Prior art keywords
- pin
- lead
- mosfet
- distance
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Description
2 IC
3 パッケージ
4 リードピン
4a 第1ピン
4b 第2ピン
4c 第3ピン
4d 第4ピン
4e 第5ピン
4h ヘッダー
11 MOSFET
12 IC
13 パッケージ
14 リードピン
14a 第1ピン
14b 第2ピン
14c 第3ピン
14d 第4ピン
14e 第5ピン
14h ヘッダー
Claims (4)
- ヘッダー部にMOSFETを搭載し、該MOSFETを前記ヘッダー部の裏面側を含めてフルモールドしたパッケージと該パッケージの本体の一側壁から導出する複数のリードピンとを有し、
該複数のリードピンのうち中央のリードピンに前記MOSFETのドレイン端子を接続すると共に、前記ヘッダー部の裏面側から離間するようにその高さを上段に形成し、
高電位となる前記中央のリードピンと、これと隣接する他のリードピンとの間隔を前記他のリードピン同士の間隔より大きくし、且つ前記中央のリードピンに隣接する他のリードピンについては、その高さを前記中央のリードピンに対して下段となるように形成して両者の間に所望の沿面距離を設けることを特徴とする電源回路装置。 - 前記MOSFET上にはICが実装されることを特徴とする請求項1に記載の電源回路装置。
- ヘッダー部にMOSFETを搭載し、該MOSFETを前記ヘッダー部の裏面側を含めてフルモールドしたパッケージと該パッケージの本体の一側壁から導出する5本のリードピンとを有し、
中央に位置する第3のリードピンに前記MOSFETのドレイン端子を接続すると共に、前記ヘッダー部の裏面側から離間するようにその高さを上段に形成し、
高電位となる第3のリードピンと、これと隣接する他のリードピンとの間隔を前記他のリードピン同士の間隔より大きくし、前記第3のリードピンと隣接する低電位の第2および第4のリードピンはその高さを前記第3のリードピンに対して下段となるように形成して、両者の間に所望の沿面距離を設けることを特徴とする電源回路装置。 - 前記MOSFET上にはICが実装されることを特徴とする請求項3に記載の電源回路装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007266916A JP4651652B2 (ja) | 2001-05-18 | 2007-10-12 | 電源回路装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001149636 | 2001-05-18 | ||
JP2007266916A JP4651652B2 (ja) | 2001-05-18 | 2007-10-12 | 電源回路装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002592190A Division JP4118143B2 (ja) | 2001-05-18 | 2002-05-17 | 電源回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008060597A JP2008060597A (ja) | 2008-03-13 |
JP4651652B2 true JP4651652B2 (ja) | 2011-03-16 |
Family
ID=39242902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007266916A Expired - Fee Related JP4651652B2 (ja) | 2001-05-18 | 2007-10-12 | 電源回路装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4651652B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103229295B (zh) | 2010-11-29 | 2016-01-06 | 丰田自动车株式会社 | 动力模块 |
DE102017209904B4 (de) * | 2017-06-13 | 2023-09-21 | Infineon Technologies Ag | Elektronisches Bauelement, Leadframe für ein elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements und eines Leadframes |
JP7299751B2 (ja) * | 2019-05-14 | 2023-06-28 | ローム株式会社 | 半導体装置 |
CN111081699A (zh) * | 2020-01-03 | 2020-04-28 | 广东美的制冷设备有限公司 | 一种智能功率模块及设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6387758A (ja) * | 1986-09-23 | 1988-04-19 | シーメンス、アクチエンゲゼルシヤフト | 半導体デバイス |
JPS63155650U (ja) * | 1987-03-31 | 1988-10-12 | ||
JPH0393257A (ja) * | 1989-09-05 | 1991-04-18 | Toshiba Corp | 樹脂封止型半導体装置 |
-
2007
- 2007-10-12 JP JP2007266916A patent/JP4651652B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6387758A (ja) * | 1986-09-23 | 1988-04-19 | シーメンス、アクチエンゲゼルシヤフト | 半導体デバイス |
JPS63155650U (ja) * | 1987-03-31 | 1988-10-12 | ||
JPH0393257A (ja) * | 1989-09-05 | 1991-04-18 | Toshiba Corp | 樹脂封止型半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2008060597A (ja) | 2008-03-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100426825B1 (ko) | 반도체 장치 | |
US9029993B2 (en) | Semiconductor device including semiconductor chip mounted on lead frame | |
JP4118143B2 (ja) | 電源回路装置 | |
JP4651652B2 (ja) | 電源回路装置 | |
JPH04167457A (ja) | 半導体装置 | |
TWI420988B (zh) | 垂直結構被動元件的裝置和方法 | |
US5473188A (en) | Semiconductor device of the LOC structure type having a flexible wiring pattern | |
JP2009044126A (ja) | テープキャリア基板および半導体装置 | |
KR20030028127A (ko) | 반도체 전력용 모듈 및 그 제조방법 | |
JP2004349300A (ja) | 半導体装置及びその製造方法 | |
KR20010068513A (ko) | 윈도우가 구비된 회로기판을 포함하는 적층 칩 패키지 | |
JP2009164325A (ja) | 絶縁基板とそれを用いた半導体装置および高電圧機器 | |
US7485960B2 (en) | Semiconductor device and manufacturing method thereof | |
CN214378390U (zh) | 芯片封装结构和半导体器件 | |
JP4622646B2 (ja) | 半導体装置 | |
JP2007305753A (ja) | 半導体装置及びその実装構造 | |
CN106601694B (zh) | 堆叠结构及其制造方法 | |
US10770400B2 (en) | Semiconductor module | |
JP5048627B2 (ja) | リードフレーム及び半導体装置 | |
KR200205182Y1 (ko) | 적층이 가능한 핀 그리드 어레이 패키지 | |
JP6685615B1 (ja) | 半導体モジュール及びリードフレーム | |
JP2006203039A (ja) | 半導体装置 | |
JPH0722577A (ja) | 混成集積回路装置 | |
JP2003060152A (ja) | 半導体装置 | |
JPH0250470A (ja) | Icパッケージ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100830 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101029 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101117 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101214 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 4651652 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131224 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131224 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131224 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131224 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131224 Year of fee payment: 3 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131224 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131224 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |