KR960039426A - 전계효과에 의해 제어가능한 반도체소자 - Google Patents
전계효과에 의해 제어가능한 반도체소자 Download PDFInfo
- Publication number
- KR960039426A KR960039426A KR1019960010104A KR19960010104A KR960039426A KR 960039426 A KR960039426 A KR 960039426A KR 1019960010104 A KR1019960010104 A KR 1019960010104A KR 19960010104 A KR19960010104 A KR 19960010104A KR 960039426 A KR960039426 A KR 960039426A
- Authority
- KR
- South Korea
- Prior art keywords
- contact surface
- semiconductor device
- gate electrode
- island
- field effect
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract 12
- 230000005669 field effect Effects 0.000 title claims 5
- 239000004020 conductor Substances 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
게이트 단자용 코택면(3)은 코택면과 게이트 전극 사이에 배치된 적어도 하나의 집적 옴 저항(5)을 통해 게이트 전극에 접속된다. 따라서, 반도체소자의 병렬 접속시 지금까지 필요했던 게이트 인입선내의 별도의 저항칩이 필요없다. 그로 인해, 모듈의 간단한 구성이 가능해진다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도내지 제3도는 각 실시예의 평면도.
Claims (8)
- 반도체 몸체의 표면에 대해 절연되게 도핑된 폴리실리콘층이 반도체 몸체상에 배열되며, 상기 폴리실리콘층의 제1부분은 게이트 전극(1)이고, 제2부분은 게이트 인입선을 위한 콘택면(3)이도록 구성된 전계효과에 의해 제어가능한 반도체소자에 있어서, 콘택면이 콘택면(3)과, 게이트 전극(1) 사이에 놓인 적어도 하나의 집적 옴 저항을 통해 게이트 전극에 전기적으로 접속되는 것을 특징으로 하는 전계효과에 의해 제어가능한 반도체 소자.
- 제1항에 있어서, 옴 저항이 도핑된 다결정 실리콘으로 이루어진 적어도 하나의 섬(5)인 것을 특징으로 하는 전계효과에 의해 제어가능한 반도체소자
- 제2항에 있어서, 섬(5)이 적어도 하나의 스트립도체(6)를 통해 콘택면(3)에 접속되고, 적어도 하나의 스트립도체(6)를 통해 게이트 전극(1)에 접속되는 것을 특징으로 하는 전계효과에 의해 제어가능한 반도체소자.
- 제1항에 있어서, 옴 저항이 도핑된 다결정 실리콘으로 이루어진 적어도 하나의 스트립(8)으로 형성되며, 상기 스트립(8)은 콘택면(3)과, 게이트 전극(1)에 접속되는 것을 특징으로 하는 전계효과에 의해 제어가능한 반도체소자.
- 제1항에 있어서 콘택면(3)은 직사각형이고, 각 에지의 근처에 또는 근처내에 섬(5)이 배치되는 것을 특징으로 하는 전계효과에 의해 제어가능한 반도체소자.
- 제1항내지 5항 중 어느 한 항에 있어서, 콘택면(23)은 가장자리에 적어도 하나의 리세스(24)를 가지며, 섬(5)이 상기 리세스내에 배치되는 것을 특징으로 하는 전계효과에 의해 제어가능한 반도체 소자.
- 제6항에 있어서, 콘택면(3)이 직사각형으로 형성되고, 콘택면의 각각의 에지는 사각형 리세스(24)를 가지며, 각각의 리세스내에 옴 저항으로서 사각형 폴리실리콘 섬(5)이 배열되는 것을 특징으로 하는 전계효과에 의해 제어가능한 반도체소자.
- 제1항 또는 제3항에 있어서 섬(5) 및 게이트 전극(1)이 절연층(10)으로 덮혀지며, 게이트 전극 및 콘택면 상부에 잇는 절연층상에는 각각 하나의 금속층 14,15)이 놓이고 상기 금속층은 절연층내에 제공된 콘택홀(16,19)을 통해 게이트전극 또는 콘택면에 전기적으로 접속되며, 스트립도체(6)는 콘택홀(17)을 통해 섬(5)콘택면(3) 및 게이트 전극(1)에 전기적으로 접속되는 것을 특징으로 하는 전계효과에 의해 제어가능한 반도체 소자.※참고사항: 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19512799A DE19512799C2 (de) | 1995-04-05 | 1995-04-05 | Durch Feldeffekt steuerbares Halbleiterbauelement |
DE19512799.4 | 1995-04-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960039426A true KR960039426A (ko) | 1996-11-25 |
KR100397079B1 KR100397079B1 (ko) | 2004-03-18 |
Family
ID=7758878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960010104A KR100397079B1 (ko) | 1995-04-05 | 1996-04-04 | 전계효과에의해제어가능한반도체소자 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5726474A (ko) |
EP (1) | EP0736907B1 (ko) |
JP (1) | JP3677346B2 (ko) |
KR (1) | KR100397079B1 (ko) |
DE (2) | DE19512799C2 (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6069398A (en) * | 1997-08-01 | 2000-05-30 | Advanced Micro Devices, Inc. | Thin film resistor and fabrication method thereof |
DE19808154A1 (de) * | 1998-02-27 | 1999-09-02 | Asea Brown Boveri | Bipolartransistor mit isolierter Gateelektrode |
WO1999044240A1 (de) | 1998-02-27 | 1999-09-02 | Asea Brown Boveri Ag | Bipolartransistor mit isolierter gateelektrode |
DE19823170A1 (de) * | 1998-05-23 | 1999-11-25 | Asea Brown Boveri | Bipolartransistor mit isolierter Gateelektrode |
JP2994326B2 (ja) * | 1998-04-27 | 1999-12-27 | 日本電気アイシーマイコンシステム株式会社 | 半導体装置 |
US6992916B2 (en) * | 2003-06-13 | 2006-01-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | SRAM cell design with high resistor CMOS gate structure for soft error rate improvement |
US7486541B2 (en) * | 2003-06-13 | 2009-02-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistive cell structure for reducing soft error rate |
US8155916B2 (en) | 2008-07-07 | 2012-04-10 | Infineon Technologies Ag | Semiconductor component and method of determining temperature |
US8314462B2 (en) * | 2009-07-28 | 2012-11-20 | Cree, Inc. | Semiconductor devices including electrodes with integrated resistances |
EP2602828A1 (en) | 2011-12-07 | 2013-06-12 | Nxp B.V. | Semiconductor device having isolation trenches |
US9917102B2 (en) | 2013-11-28 | 2018-03-13 | Rohm Co., Ltd. | Semiconductor device |
DE102017105548A1 (de) | 2017-03-15 | 2018-09-20 | Infineon Technologies Dresden Gmbh | Halbleitervorrichtung, die eine gatekontaktstruktur enthält |
JP7127413B2 (ja) * | 2018-08-03 | 2022-08-30 | 富士電機株式会社 | 抵抗素子及びその製造方法 |
JP7180359B2 (ja) * | 2018-12-19 | 2022-11-30 | 富士電機株式会社 | 抵抗素子 |
US11664436B2 (en) * | 2021-03-01 | 2023-05-30 | Wolfspeed, Inc. | Semiconductor devices having gate resistors with low variation in resistance values |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60171771A (ja) * | 1984-02-17 | 1985-09-05 | Hitachi Ltd | 絶縁ゲ−ト半導体装置 |
JPH0758781B2 (ja) * | 1985-10-24 | 1995-06-21 | 三菱電機株式会社 | 電界効果型半導体装置 |
US4920388A (en) * | 1987-02-17 | 1990-04-24 | Siliconix Incorporated | Power transistor with integrated gate resistor |
US5182225A (en) * | 1990-01-10 | 1993-01-26 | Microunity Systems Engineering, Inc. | Process for fabricating BICMOS with hypershallow junctions |
JPH03238868A (ja) * | 1990-02-15 | 1991-10-24 | Nec Corp | 縦型電界効果トランジスタ |
JPH0555588A (ja) * | 1991-08-27 | 1993-03-05 | Sanyo Electric Co Ltd | マルチチツプ型mos電界効果トランジスタ |
US5436197A (en) * | 1993-09-07 | 1995-07-25 | Motorola, Inc. | Method of manufacturing a bonding pad structure |
-
1995
- 1995-04-05 DE DE19512799A patent/DE19512799C2/de not_active Expired - Fee Related
-
1996
- 1996-03-18 EP EP96104243A patent/EP0736907B1/de not_active Expired - Lifetime
- 1996-03-18 DE DE59603948T patent/DE59603948D1/de not_active Expired - Lifetime
- 1996-03-19 US US08/617,566 patent/US5726474A/en not_active Expired - Lifetime
- 1996-04-03 JP JP10473996A patent/JP3677346B2/ja not_active Expired - Lifetime
- 1996-04-04 KR KR1019960010104A patent/KR100397079B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100397079B1 (ko) | 2004-03-18 |
JPH08288512A (ja) | 1996-11-01 |
DE19512799C2 (de) | 1998-11-12 |
EP0736907B1 (de) | 1999-12-22 |
JP3677346B2 (ja) | 2005-07-27 |
DE19512799A1 (de) | 1996-10-10 |
EP0736907A1 (de) | 1996-10-09 |
US5726474A (en) | 1998-03-10 |
DE59603948D1 (de) | 2000-01-27 |
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