KR870005459A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR870005459A
KR870005459A KR860009284A KR860009284A KR870005459A KR 870005459 A KR870005459 A KR 870005459A KR 860009284 A KR860009284 A KR 860009284A KR 860009284 A KR860009284 A KR 860009284A KR 870005459 A KR870005459 A KR 870005459A
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KR
South Korea
Prior art keywords
well region
semiconductor device
semiconductor substrate
semiconductor
mosfet
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Application number
KR860009284A
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English (en)
Other versions
KR970000462B1 (ko
Inventor
아쓰오 와다나베
요시아끼 야자와
아쓰시 히라이시
마사다까 미나미
다까히로 나가노
다까히데 이께다
나오히로 몬마
Original Assignee
미쓰다 가쓰시게
가부시끼가이샤 히다찌 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 미쓰다 가쓰시게, 가부시끼가이샤 히다찌 세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR870005459A publication Critical patent/KR870005459A/ko
Application granted granted Critical
Publication of KR970000462B1 publication Critical patent/KR970000462B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/921—Radiation hardened semiconductor device

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예시도.
제2도는 제1도의 MOSFET의 제조프로세스 표시도.
제3도는 본 발명의 다른 실시예시도.
*도면의 주요 부분에 대한 부호의 설명
1 : 반도체기판 2 : P형 웰영역
3 : 고농도층 120 : N형 웰영역

Claims (1)

  1. 반도체기판의 소정영역에 웰영역이 형성되며 이 웰영역에 MOSFET를 형성한 반도체장치에 있어서 웰영역의 불순물 농도분포는 표면보다 깊은 부분에서 골 형상을 가지며 그 곡소점은 그 농도가 5×1015cm-3이하고 반도체기판 표면에서 1.6㎛이내의 깊은 곳에 위치하고 있는 것을 특징으로 하는 반도체 기억장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860009284A 1985-11-29 1986-11-04 반도체 장치 KR970000462B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60-267170 1985-11-29
JP60267170A JPH0770606B2 (ja) 1985-11-29 1985-11-29 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1019940016676A Division KR960016692A (ko) 1985-11-29 1994-07-11 반도체장치

Publications (2)

Publication Number Publication Date
KR870005459A true KR870005459A (ko) 1987-06-09
KR970000462B1 KR970000462B1 (ko) 1997-01-11

Family

ID=17441073

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019860009284A KR970000462B1 (ko) 1985-11-29 1986-11-04 반도체 장치
KR1019940016676A KR960016692A (ko) 1985-11-29 1994-07-11 반도체장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1019940016676A KR960016692A (ko) 1985-11-29 1994-07-11 반도체장치

Country Status (3)

Country Link
US (2) US4963973A (ko)
JP (1) JPH0770606B2 (ko)
KR (2) KR970000462B1 (ko)

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Also Published As

Publication number Publication date
KR970000462B1 (ko) 1997-01-11
JPH0770606B2 (ja) 1995-07-31
JPS62128170A (ja) 1987-06-10
KR960016692A (ko) 1996-05-22
US5726488A (en) 1998-03-10
US4963973A (en) 1990-10-16

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