KR900004031A - 바이폴러 트랜지스터 및 그 제조방법 - Google Patents

바이폴러 트랜지스터 및 그 제조방법 Download PDF

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KR900004031A
KR900004031A KR1019890011433A KR890011433A KR900004031A KR 900004031 A KR900004031 A KR 900004031A KR 1019890011433 A KR1019890011433 A KR 1019890011433A KR 890011433 A KR890011433 A KR 890011433A KR 900004031 A KR900004031 A KR 900004031A
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base
intrinsic
diffusion
forming
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KR1019890011433A
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KR0156544B1 (ko
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다까유끼 고미
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오오가 노리오
소니 가부시끼 가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H01L29/0826—Pedestal collectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/157—Special diffusion and profiles

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음

Description

바이폴러 트랜지스터 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 바이폴러 트랜지스터의 한예의 단면도.
제2도는 그 요부 단면도.
제3도는 본 발명의 바이폴러 트랜지스터의 다른 한예의 단면도.

Claims (2)

  1. 제1전도형의 콜렉터 영역내에 형성된 제2전도형의 베이스 영역과, 그 베이스 영역내에 형성된 제1전도형의 에미터 영역으로 형성되는 바이폴러 트랜지스터에 있어서, 상기 베이스 영역은 베이스 취출 영역, 진성 베이스 영역 및 상기 베이스 취출 영역과 진성 베이스 영역간을 접속하고 그 진성 베이스 영역보다도 확산깊이가 얕은 베이스 접속 영역으로 형성되며, 상기 관성 베이스 영역내에 상기 에미터 영역이 형성되고, 적어도 그 진성 베이스 영역하에는 제1전도형의 확산 억제 영역이 형성되는 것을 특징으로하는 바이폴러 트랜지스터.
  2. 바이폴러 트랜지스터 제조방법에 있어서, 제1전도형의 반도체 기체상에 선택적으로 형성된 베이스 취출 전극과 셀파라인에서 불순물을 도입하여 소요의 확산 깊이로 되도록 제2전도형의 베이스 접속 영역을 형성하고, 그 베이스 접속 영역의 하부에 확산억제 영역을 형성하는 공정과, 상기 베이스 취출 전극에서의 확산에서 상기 베이스 접속 영역과 접속하는 베이스 취출 영역을 형성하는 공정과, 제1전도형의 반도체 기체의 표면에서 상기 베이스 접속 영역과 접하여, 진성 베이스 영역을 그 베이스 접속 영역의 확산 깊이 보다도 깊은 확산 깊이로서 형성하는 공정과, 상기 진성 베이스 영역내에 에미터 영역을 형성하는 공정을 가지는 것을 특징으로하는 바이폴러 트랜지스터 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890011433A 1988-08-12 1989-08-11 바이폴러 트랜지스터 및 그 제조방법 KR0156544B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63201360A JP2748420B2 (ja) 1988-08-12 1988-08-12 バイポーラトランジスタ及びその製造方法
JP201360 1988-08-12

Publications (2)

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KR900004031A true KR900004031A (ko) 1990-03-27
KR0156544B1 KR0156544B1 (ko) 1998-10-15

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KR1019890011433A KR0156544B1 (ko) 1988-08-12 1989-08-11 바이폴러 트랜지스터 및 그 제조방법

Country Status (5)

Country Link
US (1) US5010026A (ko)
EP (1) EP0354765B1 (ko)
JP (1) JP2748420B2 (ko)
KR (1) KR0156544B1 (ko)
DE (1) DE68928482T2 (ko)

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Also Published As

Publication number Publication date
US5010026A (en) 1991-04-23
DE68928482D1 (de) 1998-01-22
JP2748420B2 (ja) 1998-05-06
JPH0250435A (ja) 1990-02-20
KR0156544B1 (ko) 1998-10-15
EP0354765A3 (en) 1990-06-20
EP0354765A2 (en) 1990-02-14
EP0354765B1 (en) 1997-12-10
DE68928482T2 (de) 1998-04-09

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