KR890013786A - 비정질 실리콘 박막 트랜지스터 어레이 기판 및 그 제조방법 - Google Patents
비정질 실리콘 박막 트랜지스터 어레이 기판 및 그 제조방법 Download PDFInfo
- Publication number
- KR890013786A KR890013786A KR1019890001976A KR890001976A KR890013786A KR 890013786 A KR890013786 A KR 890013786A KR 1019890001976 A KR1019890001976 A KR 1019890001976A KR 890001976 A KR890001976 A KR 890001976A KR 890013786 A KR890013786 A KR 890013786A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- film transistor
- amorphous silicon
- silicon thin
- transistor array
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims 8
- 239000010409 thin film Substances 0.000 title claims 8
- 238000004519 manufacturing process Methods 0.000 title claims 3
- 239000002184 metal Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 실시에 사용되는 메탈마스크 및 절연성기판의 관계를 도시한 사시도,
제5도 내지 7도는 본 발명의 다른 실시예의 소오스배선 단자부의 단면도.
Claims (3)
- 절연성기판상에 형성되고 게이트 절연층을 가지는 역스태거형의 비정질 실리콘 박막 트랜지스터 어레이, 이 비정질실리콘 박막 트랜지스터 어레이의 게이트 전극끼리를 연결하는 게이트 배선, 및 소오소 전극끼리를 연결하는 소오스배선을 가지며, 상기 게이트 절여층을 소오스 배선단자부의 하층에 설치한 것을 특징으로 하는 비정질 실리콘 박막 트랜지스터 어레이 기판.
- 절연성 기판상에 형성하고 게이트절연층을 가지는 역스태거형의 비정질실리콘 박막 트랜지스터 어레이, 이 비정질 실리콘 박막 트랜지스터 어레이의 게이트전극끼리를 연결하는 게이트 배선, 및 소오스 전극 끼리를 연결하는 소오스 배선을 적어도 가지고 형성되는 비정질 실리콘 박막 트랜지스터 어레이 기판의 제조방법에 있어서, 상기 게이트 절연층을 게이트 배선단자부이외의 부분에 피착 형성하는 공정과, 소오스 배선단자부를 상기 게이트 절연층상에 피착 형성하는 공정을 가지는 것을 특징으로 하는 비정질 실리콘 박막 트랜지스터 어레이기판의 제조방법.
- 제2항에 있어서, 상기 게이트 절연층을 형성할때에, 게이트 배선단자부를 마스크하고, 소오스 배선단자부를 마스크하지 않는 형상을 가진 메탈 마스크를 사용하는 것을 특징으로 하는 비정질 실리콘 박막 트랜지스터 어레이 기판의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63043575A JPH01217421A (ja) | 1988-02-26 | 1988-02-26 | 非晶質シリコン薄膜トランジスタアレイ基板およびその製造方法 |
JP63-43575 | 1988-02-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890013786A true KR890013786A (ko) | 1989-09-26 |
KR920005512B1 KR920005512B1 (ko) | 1992-07-06 |
Family
ID=12667552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890001976A KR920005512B1 (ko) | 1988-02-26 | 1989-02-20 | 비정질 실리콘 박막 트랜지스터 어레이 기판 및 그 제조방법 |
Country Status (3)
Country | Link |
---|---|
US (2) | US5034340A (ko) |
JP (1) | JPH01217421A (ko) |
KR (1) | KR920005512B1 (ko) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3009438B2 (ja) * | 1989-08-14 | 2000-02-14 | 株式会社日立製作所 | 液晶表示装置 |
JPH04133313A (ja) * | 1990-09-25 | 1992-05-07 | Semiconductor Energy Lab Co Ltd | 半導体作製方法 |
TW237562B (ko) | 1990-11-09 | 1995-01-01 | Semiconductor Energy Res Co Ltd | |
US7154147B1 (en) * | 1990-11-26 | 2006-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
US8106867B2 (en) | 1990-11-26 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
JP3134344B2 (ja) * | 1991-05-17 | 2001-02-13 | 日本電気株式会社 | 半導体装置 |
US6979840B1 (en) | 1991-09-25 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having anodized metal film between the gate wiring and drain wiring |
US5274602A (en) * | 1991-10-22 | 1993-12-28 | Florida Atlantic University | Large capacity solid-state memory |
US5409851A (en) * | 1992-05-04 | 1995-04-25 | Goldstar Co., Ltd. | Method of making a thin film transistor |
JP2635885B2 (ja) * | 1992-06-09 | 1997-07-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 薄膜トランジスタ及びアクティブマトリクス液晶表示装置 |
US5396083A (en) * | 1992-06-30 | 1995-03-07 | Goldstar Co., Ltd. | Thin film transistor and method of making the same |
JP2886066B2 (ja) * | 1993-11-16 | 1999-04-26 | 株式会社フロンテック | 薄膜トランジスタ基板およびその製造方法 |
KR100244447B1 (ko) * | 1997-04-03 | 2000-02-01 | 구본준 | 액정 표시 장치 및 그 액정 표시 장치의 제조 방법 |
JP2000330134A (ja) * | 1999-03-16 | 2000-11-30 | Furontekku:Kk | 薄膜トランジスタ基板および液晶表示装置 |
US6876405B1 (en) * | 2000-02-10 | 2005-04-05 | Samsung Electronics Co., Ltd. | Method for manufacturing a liquid crystal display with a novel structure of thin film transistor substrate |
US6678018B2 (en) * | 2000-02-10 | 2004-01-13 | Samsung Electronics Co., Ltd. | Thin film transistor array substrate for a liquid crystal display and the method for fabricating the same |
US6872974B2 (en) * | 2001-11-20 | 2005-03-29 | International Business Machines Corporation | Low threshold voltage instability amorphous silicon field effect transistor structure and biasing for active matrix organic light-emitting diodes |
US20050044051A1 (en) * | 2003-08-22 | 2005-02-24 | Selby David A. | Combo kit and method of providing a combo kit |
KR100698062B1 (ko) * | 2004-04-01 | 2007-03-23 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
US8026873B2 (en) * | 2007-12-21 | 2011-09-27 | Global Oled Technology Llc | Electroluminescent display compensated analog transistor drive signal |
US8217928B2 (en) * | 2009-03-03 | 2012-07-10 | Global Oled Technology Llc | Electroluminescent subpixel compensated drive signal |
US8194063B2 (en) * | 2009-03-04 | 2012-06-05 | Global Oled Technology Llc | Electroluminescent display compensated drive signal |
WO2013021426A1 (ja) * | 2011-08-10 | 2013-02-14 | パナソニック株式会社 | 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法 |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3885196A (en) * | 1972-11-30 | 1975-05-20 | Us Army | Pocketable direct current electroluminescent display device addressed by MOS or MNOS circuitry |
US4368467A (en) * | 1980-02-29 | 1983-01-11 | Fujitsu Limited | Display device |
GB2081018B (en) * | 1980-07-31 | 1985-06-26 | Suwa Seikosha Kk | Active matrix assembly for display device |
US4470060A (en) * | 1981-01-09 | 1984-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display with vertical non-single crystal semiconductor field effect transistors |
DE3146981A1 (de) * | 1981-11-26 | 1983-06-01 | Siemens AG, 1000 Berlin und 8000 München | Fototransistor in mos-duennschichttechnik, verfahren zu seiner herstellung und verfahren zu seinem betrieb. |
FR2524714B1 (fr) * | 1982-04-01 | 1986-05-02 | Suwa Seikosha Kk | Transistor a couche mince |
US4704002A (en) * | 1982-06-15 | 1987-11-03 | Matsushita Electric Industrial Co., Ltd. | Dot matrix display panel with a thin film transistor and method of manufacturing same |
JPS59124319A (ja) * | 1982-12-29 | 1984-07-18 | Matsushita Electric Ind Co Ltd | 画像表示装置 |
JPS59189676A (ja) * | 1983-04-12 | 1984-10-27 | Sony Corp | 半導体装置 |
JPS6012770A (ja) * | 1983-07-01 | 1985-01-23 | Matsushita Electric Ind Co Ltd | 薄膜電界効果トランジスタ |
US4545112A (en) * | 1983-08-15 | 1985-10-08 | Alphasil Incorporated | Method of manufacturing thin film transistors and transistors made thereby |
US4651185A (en) * | 1983-08-15 | 1987-03-17 | Alphasil, Inc. | Method of manufacturing thin film transistors and transistors made thereby |
JPS6092663A (ja) * | 1983-10-26 | 1985-05-24 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ− |
JPS60105275A (ja) * | 1983-11-11 | 1985-06-10 | Seiko Instr & Electronics Ltd | Mis型薄膜トランジスタ |
JPS615579A (ja) * | 1984-06-19 | 1986-01-11 | Nec Corp | 薄膜トランジスタ |
JPS6113665A (ja) * | 1984-06-29 | 1986-01-21 | Fujitsu Ltd | シフトレジスタ集積回路 |
JPS6142961A (ja) * | 1984-08-07 | 1986-03-01 | Matsushita Electric Ind Co Ltd | 薄膜電界効果トランジスタとその製造方法 |
JPH0682839B2 (ja) * | 1984-08-21 | 1994-10-19 | セイコー電子工業株式会社 | 表示用パネルの製造方法 |
EP0182645B1 (en) * | 1984-11-16 | 1991-01-23 | Matsushita Electric Industrial Co., Ltd. | Active matrix circuit for liquid crystal displays |
JPS61138285A (ja) * | 1984-12-10 | 1986-06-25 | ホシデン株式会社 | 液晶表示素子 |
JPH0752776B2 (ja) * | 1985-01-24 | 1995-06-05 | シャープ株式会社 | 薄膜トランジスタおよびその製造法 |
JPS61220369A (ja) * | 1985-03-26 | 1986-09-30 | Agency Of Ind Science & Technol | 薄膜電界効果素子 |
JPS62921A (ja) * | 1985-06-26 | 1987-01-06 | Mitsubishi Electric Corp | 液晶表示装置 |
FR2585167B1 (fr) * | 1985-07-19 | 1993-05-07 | Gen Electric | Structures conductrices redondantes pour affichages a cristaux liquides commandes par des transistors a effet de champ en couche mince |
JPS6255625A (ja) * | 1985-09-05 | 1987-03-11 | Canon Inc | 液晶装置 |
JPH084143B2 (ja) * | 1985-09-27 | 1996-01-17 | 富士通株式会社 | 半導体装置およびその製造方法 |
JPS62122171A (ja) * | 1985-11-22 | 1987-06-03 | Hitachi Ltd | 薄膜トランジスタ |
DE3640174A1 (de) * | 1985-11-27 | 1987-06-04 | Sharp Kk | Duennfilm-transistor-anordnung |
JP2865284B2 (ja) * | 1986-03-10 | 1999-03-08 | 松下電器産業株式会社 | 薄膜半導体デバイス |
JPS62219662A (ja) * | 1986-03-20 | 1987-09-26 | Fujitsu Ltd | アモルフアスシリコン薄膜トランジスタマトリクスアレイ |
JPS62285464A (ja) * | 1986-06-03 | 1987-12-11 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタアレイ基板及びその製造方法 |
JPS631072A (ja) * | 1986-06-20 | 1988-01-06 | Toshiba Corp | 薄膜電界効果トランジスタ |
JP2572379B2 (ja) * | 1986-07-31 | 1997-01-16 | 株式会社日立製作所 | 薄膜トランジスタの製造方法 |
JPS6347979A (ja) * | 1986-08-18 | 1988-02-29 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ |
US4803536A (en) * | 1986-10-24 | 1989-02-07 | Xerox Corporation | Electrostatic discharge protection network for large area transducer arrays |
JPS63178559A (ja) * | 1987-01-19 | 1988-07-22 | Sanyo Electric Co Ltd | 薄膜トランジスタ |
JPS63193569A (ja) * | 1987-02-05 | 1988-08-10 | Ricoh Co Ltd | 薄膜トランジスタ |
JPS63193568A (ja) * | 1987-02-05 | 1988-08-10 | Mitsubishi Electric Corp | 薄膜トランジスタ |
JPS63262621A (ja) * | 1987-04-21 | 1988-10-28 | Alps Electric Co Ltd | 薄膜トランジスタアレイのトリミング方法 |
JPS63265223A (ja) * | 1987-04-23 | 1988-11-01 | Alps Electric Co Ltd | 薄膜トランジスタアレイおよびその製法 |
JPS64930A (en) * | 1987-06-24 | 1989-01-05 | Alps Electric Co Ltd | Liquid crystal element |
US4960719A (en) * | 1988-02-04 | 1990-10-02 | Seikosha Co., Ltd. | Method for producing amorphous silicon thin film transistor array substrate |
JPH0646639B2 (ja) * | 1988-05-25 | 1994-06-15 | 株式会社精工舎 | 逆スタガー型シリコン薄膜トランジスタの製造方法 |
JPH01302769A (ja) * | 1988-05-30 | 1989-12-06 | Seikosha Co Ltd | 逆スタガー型シリコン薄膜トランジスタの製造方法 |
JP2850332B2 (ja) * | 1988-09-14 | 1999-01-27 | セイコーエプソン株式会社 | 薄膜トランジスタ |
-
1988
- 1988-02-26 JP JP63043575A patent/JPH01217421A/ja active Pending
-
1989
- 1989-02-20 KR KR1019890001976A patent/KR920005512B1/ko not_active IP Right Cessation
- 1989-06-26 US US07/371,478 patent/US5034340A/en not_active Expired - Lifetime
-
1990
- 1990-06-04 US US07/534,003 patent/US5065202A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5065202A (en) | 1991-11-12 |
JPH01217421A (ja) | 1989-08-31 |
KR920005512B1 (ko) | 1992-07-06 |
US5034340A (en) | 1991-07-23 |
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