KR910013570A - 쇼트키.다이오드 - Google Patents
쇼트키.다이오드 Download PDFInfo
- Publication number
- KR910013570A KR910013570A KR1019900020614A KR900020614A KR910013570A KR 910013570 A KR910013570 A KR 910013570A KR 1019900020614 A KR1019900020614 A KR 1019900020614A KR 900020614 A KR900020614 A KR 900020614A KR 910013570 A KR910013570 A KR 910013570A
- Authority
- KR
- South Korea
- Prior art keywords
- regions
- conductivity type
- schottky diodes
- schottky diode
- dispersed
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 1
- 239000008188 pellet Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/91—Diode arrays, e.g. diode read-only memory array
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시예에 관계되는 쇼트키·다이오드의 일부를 도시한 단면도,
제2도는 제1도의 쇼트키·다이오드의 제조에 있어서 사용되는 마스크 패턴의 한 예를 도시한 도면.
Claims (1)
- 제1 도전형 반도체 기판(10)에 있어서, 최대폭이 거의 500㎛ 이하로 규정된 단위 영역내의 표면에 상기 제1 도전형과는 반대의 도전형을 갖는 영역(3)이 소정 배열에 따라서 분산하여 다수 형성된 영역(4)를 1개의 반도체 펠릿 위에 복수개 갖고, 이들 각 영역 위에 장벽 전극(5)가 형성되고, 각 영역이 병렬 접속해서 되는 것을 특징으로 하는 쇼트키·다이오드.※ 참고사항 : 최초출된 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1325394A JPH065736B2 (ja) | 1989-12-15 | 1989-12-15 | ショットキー・ダイオード |
JP1-325394 | 1989-12-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910013570A true KR910013570A (ko) | 1991-08-08 |
KR940001055B1 KR940001055B1 (ko) | 1994-02-08 |
Family
ID=18176349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900020614A KR940001055B1 (ko) | 1989-12-15 | 1990-12-14 | 쇼트키·다이오드 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5148241A (ko) |
EP (1) | EP0435105B1 (ko) |
JP (1) | JPH065736B2 (ko) |
KR (1) | KR940001055B1 (ko) |
DE (1) | DE69012078T2 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5614755A (en) * | 1993-04-30 | 1997-03-25 | Texas Instruments Incorporated | High voltage Shottky diode |
WO2001054197A1 (en) * | 2000-01-19 | 2001-07-26 | Fabtech, Inc. | Distributed reverse surge guard |
US6717229B2 (en) | 2000-01-19 | 2004-04-06 | Fabtech, Inc. | Distributed reverse surge guard |
JP3860705B2 (ja) * | 2000-03-31 | 2006-12-20 | 新電元工業株式会社 | 半導体装置 |
US6362112B1 (en) | 2000-11-08 | 2002-03-26 | Fabtech, Inc. | Single step etched moat |
US6462393B2 (en) | 2001-03-20 | 2002-10-08 | Fabtech, Inc. | Schottky device |
US6841825B2 (en) * | 2002-06-05 | 2005-01-11 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor device |
KR100861294B1 (ko) * | 2006-02-24 | 2008-10-01 | 주식회사 하이닉스반도체 | 반도체 회로용 정전기 보호소자 |
JP4512121B2 (ja) * | 2007-07-27 | 2010-07-28 | 旭化成東光パワーデバイス株式会社 | ショットキーバリアダイオードの製造方法およびショットキーバリアダイオード |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5499580A (en) * | 1977-12-27 | 1979-08-06 | Nec Corp | Semiconductor integrated circuit device |
JPS55162273A (en) * | 1979-06-04 | 1980-12-17 | Origin Electric Co Ltd | Schottky barrier diode |
JPS5650581A (en) * | 1979-10-01 | 1981-05-07 | Hitachi Ltd | Schottky diode |
JPS6031112B2 (ja) * | 1979-12-20 | 1985-07-20 | 日本電信電話株式会社 | Pn接合を有するシヨツトキダイオ−ド |
JPS5935183A (ja) * | 1982-08-23 | 1984-02-25 | 株式会社東芝 | 高速増殖炉 |
US4641174A (en) * | 1983-08-08 | 1987-02-03 | General Electric Company | Pinch rectifier |
JPS61147570A (ja) * | 1984-12-20 | 1986-07-05 | Sanyo Electric Co Ltd | ショットキバリア半導体装置 |
GB2176339A (en) * | 1985-06-10 | 1986-12-17 | Philips Electronic Associated | Semiconductor device with schottky junctions |
JPH01257370A (ja) * | 1988-04-07 | 1989-10-13 | Sanken Electric Co Ltd | ショットキバリア半導体装置 |
JP2667477B2 (ja) * | 1988-12-02 | 1997-10-27 | 株式会社東芝 | ショットキーバリアダイオード |
-
1989
- 1989-12-15 JP JP1325394A patent/JPH065736B2/ja not_active Expired - Fee Related
-
1990
- 1990-12-12 US US07/626,460 patent/US5148241A/en not_active Expired - Lifetime
- 1990-12-14 DE DE69012078T patent/DE69012078T2/de not_active Expired - Fee Related
- 1990-12-14 EP EP90124190A patent/EP0435105B1/en not_active Expired - Lifetime
- 1990-12-14 KR KR1019900020614A patent/KR940001055B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5148241A (en) | 1992-09-15 |
DE69012078D1 (de) | 1994-10-06 |
JPH03185871A (ja) | 1991-08-13 |
EP0435105A1 (en) | 1991-07-03 |
EP0435105B1 (en) | 1994-08-31 |
DE69012078T2 (de) | 1995-01-26 |
JPH065736B2 (ja) | 1994-01-19 |
KR940001055B1 (ko) | 1994-02-08 |
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