JPS5752128A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5752128A JPS5752128A JP12724580A JP12724580A JPS5752128A JP S5752128 A JPS5752128 A JP S5752128A JP 12724580 A JP12724580 A JP 12724580A JP 12724580 A JP12724580 A JP 12724580A JP S5752128 A JPS5752128 A JP S5752128A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ions
- injected
- diffusion
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 150000002500 ions Chemical class 0.000 abstract 8
- 239000000758 substrate Substances 0.000 abstract 8
- 238000009792 diffusion process Methods 0.000 abstract 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005204 segregation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12724580A JPS5752128A (en) | 1980-09-16 | 1980-09-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12724580A JPS5752128A (en) | 1980-09-16 | 1980-09-16 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5752128A true JPS5752128A (en) | 1982-03-27 |
JPS6255689B2 JPS6255689B2 (ja) | 1987-11-20 |
Family
ID=14955284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12724580A Granted JPS5752128A (en) | 1980-09-16 | 1980-09-16 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5752128A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109196622A (zh) * | 2016-05-31 | 2019-01-11 | 欧洲激光***和解决方案公司 | 深结电子器件及其制造方法 |
-
1980
- 1980-09-16 JP JP12724580A patent/JPS5752128A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109196622A (zh) * | 2016-05-31 | 2019-01-11 | 欧洲激光***和解决方案公司 | 深结电子器件及其制造方法 |
CN109196622B (zh) * | 2016-05-31 | 2024-04-02 | 欧洲激光***和解决方案公司 | 深结电子器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6255689B2 (ja) | 1987-11-20 |
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