JPS5752128A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5752128A
JPS5752128A JP12724580A JP12724580A JPS5752128A JP S5752128 A JPS5752128 A JP S5752128A JP 12724580 A JP12724580 A JP 12724580A JP 12724580 A JP12724580 A JP 12724580A JP S5752128 A JPS5752128 A JP S5752128A
Authority
JP
Japan
Prior art keywords
substrate
ions
injected
diffusion
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12724580A
Other languages
English (en)
Other versions
JPS6255689B2 (ja
Inventor
Koichi Inoue
Naohiro Monma
Osamu Saito
Hideo Honma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12724580A priority Critical patent/JPS5752128A/ja
Publication of JPS5752128A publication Critical patent/JPS5752128A/ja
Publication of JPS6255689B2 publication Critical patent/JPS6255689B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2252Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H01L21/2253Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP12724580A 1980-09-16 1980-09-16 Manufacture of semiconductor device Granted JPS5752128A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12724580A JPS5752128A (en) 1980-09-16 1980-09-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12724580A JPS5752128A (en) 1980-09-16 1980-09-16 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5752128A true JPS5752128A (en) 1982-03-27
JPS6255689B2 JPS6255689B2 (ja) 1987-11-20

Family

ID=14955284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12724580A Granted JPS5752128A (en) 1980-09-16 1980-09-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5752128A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109196622A (zh) * 2016-05-31 2019-01-11 欧洲激光***和解决方案公司 深结电子器件及其制造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109196622A (zh) * 2016-05-31 2019-01-11 欧洲激光***和解决方案公司 深结电子器件及其制造方法
CN109196622B (zh) * 2016-05-31 2024-04-02 欧洲激光***和解决方案公司 深结电子器件及其制造方法

Also Published As

Publication number Publication date
JPS6255689B2 (ja) 1987-11-20

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