JPS572516A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS572516A
JPS572516A JP7642580A JP7642580A JPS572516A JP S572516 A JPS572516 A JP S572516A JP 7642580 A JP7642580 A JP 7642580A JP 7642580 A JP7642580 A JP 7642580A JP S572516 A JPS572516 A JP S572516A
Authority
JP
Japan
Prior art keywords
atmosphere
substrate
unit
prescribed time
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7642580A
Other languages
Japanese (ja)
Inventor
Keiji Watanabe
Koji Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP7642580A priority Critical patent/JPS572516A/en
Publication of JPS572516A publication Critical patent/JPS572516A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To suppress the occurrence of a strain by continuously performing the formations of a diffused layer and an insulating layer in the same heat treating unit when forming a diffused region in one main surface of a semiconductor substrate, thereby reducing the number of times of putting the substrate into the heat treating unit. CONSTITUTION:A hole is selectively opened at an insulating layer 2 formed on a semiconductor substrate 1, the substrate 1 is then put in a heat treating unit, is firstly heat treated in an oxidative atmosphere for the prescribed time, and an insulating film 2' is formed thereon. After the atmosphere in the unit is consequently altered to an atmosphere including an impurity, the substrate is secondly heat treated for the prescribed time, and an impurity diffused layer 4 is formed in the hole. The atmosphere in the unit is further altered to an oxidative atmosphere, the substrate is thirdly heat treated for the prescribed time, and an insulating layer 2'' is formed thereon. Thus, the layers 2', 4 and 2'' can be continuously formed merely by altering the atmosphere in the unit.
JP7642580A 1980-06-06 1980-06-06 Manufacture of semiconductor device Pending JPS572516A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7642580A JPS572516A (en) 1980-06-06 1980-06-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7642580A JPS572516A (en) 1980-06-06 1980-06-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS572516A true JPS572516A (en) 1982-01-07

Family

ID=13604811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7642580A Pending JPS572516A (en) 1980-06-06 1980-06-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS572516A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58134425A (en) * 1982-02-05 1983-08-10 Fuji Electric Co Ltd Manufacture of semiconductor element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50143464A (en) * 1974-05-08 1975-11-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50143464A (en) * 1974-05-08 1975-11-18

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58134425A (en) * 1982-02-05 1983-08-10 Fuji Electric Co Ltd Manufacture of semiconductor element

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