JPS6450472A - Amorphous semiconductor solar cell - Google Patents

Amorphous semiconductor solar cell

Info

Publication number
JPS6450472A
JPS6450472A JP62207871A JP20787187A JPS6450472A JP S6450472 A JPS6450472 A JP S6450472A JP 62207871 A JP62207871 A JP 62207871A JP 20787187 A JP20787187 A JP 20787187A JP S6450472 A JPS6450472 A JP S6450472A
Authority
JP
Japan
Prior art keywords
layer
substrate
main ingredient
organic silicate
amorphous semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62207871A
Other languages
Japanese (ja)
Inventor
Ichiro Kanai
Toshio Mishiyuku
Katsuyuki Horie
Satoshi Takakuwa
Hideyo Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP62207871A priority Critical patent/JPS6450472A/en
Publication of JPS6450472A publication Critical patent/JPS6450472A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To eliminate the warpage of a substrate, by forming an insulating film layer on the substrate of a silica film in which a coating agent which contains organic silicate as a main ingredient is cured. CONSTITUTION:An insulating film layer 6, a back face electrode 2, an amorphous semiconductor layer 3, a transparent electrode layer 4 and a protective film layer 5 are sequentially formed on a flexible metal substrate 1, the layer 6 is formed of a silica film in which organic silicate containing as main ingredient organopolysiloxane is cured. The layer 6 is formed by coating the substrate 1 having surface roughness of certain degree directly with a coating agent containing as a main ingredient organic silicate and heating it at 300 deg.C or less. The thus obtained layer 6 obtains a smooth surface by providing a sufficient thickness to bury the fine uneven part of the substrate 1. Thus, the warpage of the substrate can be eliminated.
JP62207871A 1987-08-20 1987-08-20 Amorphous semiconductor solar cell Pending JPS6450472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62207871A JPS6450472A (en) 1987-08-20 1987-08-20 Amorphous semiconductor solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62207871A JPS6450472A (en) 1987-08-20 1987-08-20 Amorphous semiconductor solar cell

Publications (1)

Publication Number Publication Date
JPS6450472A true JPS6450472A (en) 1989-02-27

Family

ID=16546931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62207871A Pending JPS6450472A (en) 1987-08-20 1987-08-20 Amorphous semiconductor solar cell

Country Status (1)

Country Link
JP (1) JPS6450472A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079405A (en) * 2003-09-01 2005-03-24 Nippon Steel Corp Stainless steel foil coated with silica-based inorganic polymer film and its manufacturing method
JP2007088044A (en) * 2005-09-20 2007-04-05 Nippon Steel Materials Co Ltd Coated stainless steel foil and thin film solar cell
JP2010124003A (en) * 2010-03-08 2010-06-03 Nippon Steel Corp Stainless foil cladded with silica-based inorganic polymer film, and silicon thin film solar cell using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079405A (en) * 2003-09-01 2005-03-24 Nippon Steel Corp Stainless steel foil coated with silica-based inorganic polymer film and its manufacturing method
JP2007088044A (en) * 2005-09-20 2007-04-05 Nippon Steel Materials Co Ltd Coated stainless steel foil and thin film solar cell
JP2010124003A (en) * 2010-03-08 2010-06-03 Nippon Steel Corp Stainless foil cladded with silica-based inorganic polymer film, and silicon thin film solar cell using the same

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