JPS54149463A - Selective diffusion method aluminum - Google Patents
Selective diffusion method aluminumInfo
- Publication number
- JPS54149463A JPS54149463A JP5806478A JP5806478A JPS54149463A JP S54149463 A JPS54149463 A JP S54149463A JP 5806478 A JP5806478 A JP 5806478A JP 5806478 A JP5806478 A JP 5806478A JP S54149463 A JPS54149463 A JP S54149463A
- Authority
- JP
- Japan
- Prior art keywords
- knock
- semiconductor substrate
- layer
- substrate
- atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To reduce the reduction of an Al density in a Si substrate by making it possible to form a uniform and good-control property Al knock-on layer by knock- on introduction and out-diffusing Al from the Si substrate.
CONSTITUTION: First, insulating coating 2 is formed selectively on one main face of semiconductor substrate 1, and next, insulating film 4 including Al as a constitutional element is formed on all the surface of semiconductor substrate 1. Next, insulating film 4 including Al is removed selectively while leaving a region where insulting film 4 including Al is brought into contact with semiconductor substrate 1, and next, heavy ions are injected to knock-on Al atoms into semiconductor substrate 1 and form knock-on layer 6 of Al atoms. Next, knock-on layer 6 is used as a diffusion source to perform diffusion by heating for a prescribed time, thereby forming medium-scale diffusion layer 7.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5806478A JPS54149463A (en) | 1978-05-15 | 1978-05-15 | Selective diffusion method aluminum |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5806478A JPS54149463A (en) | 1978-05-15 | 1978-05-15 | Selective diffusion method aluminum |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54149463A true JPS54149463A (en) | 1979-11-22 |
JPS6117134B2 JPS6117134B2 (en) | 1986-05-06 |
Family
ID=13073471
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5806478A Granted JPS54149463A (en) | 1978-05-15 | 1978-05-15 | Selective diffusion method aluminum |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54149463A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8163635B2 (en) | 2009-12-07 | 2012-04-24 | Sen Corporation | Manufacturing method of semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5713182B2 (en) * | 2011-01-31 | 2015-05-07 | 三菱マテリアル株式会社 | Silicon electrode plate for plasma etching |
-
1978
- 1978-05-15 JP JP5806478A patent/JPS54149463A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8163635B2 (en) | 2009-12-07 | 2012-04-24 | Sen Corporation | Manufacturing method of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6117134B2 (en) | 1986-05-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS54589A (en) | Burying method of insulator | |
JPS5249772A (en) | Process for production of semiconductor device | |
JPS54149463A (en) | Selective diffusion method aluminum | |
JPS5241654A (en) | Formation of roughened coating layer by electro-phoresis and coating c omposition for the same | |
JPS5484932A (en) | Forming method of multi-layer construction | |
JPS533066A (en) | Electrode formation method | |
JPS55110037A (en) | Method for making semiconductor device | |
JPS5376747A (en) | Forming method of insulation film | |
JPS6477143A (en) | Formation of copper thin film wiring | |
JPS5212579A (en) | Ion injection method and ion injector | |
JPS5780768A (en) | Semiconductor device | |
JPS5329086A (en) | Production of semiconductor device | |
JPS5667942A (en) | Forming method of electrode and wiring layer | |
JPS5244583A (en) | Method of treating semiconductor sustrate | |
JPS53107284A (en) | Production of semiconductor device | |
JPS5227362A (en) | Formation method of passivation film | |
JPS54156492A (en) | Manufacture for integrated circuit device | |
JPS5512775A (en) | Manufacturing method of semiconductor | |
JPS5211009A (en) | Magnetic sheet manufacturing process | |
JPS522291A (en) | Method of making semiconductor device | |
JPS53119669A (en) | Production of semiconductor device | |
JPS5218182A (en) | Manufacturing process for separation layers for formation of semicondu ctor devices | |
JPS52117550A (en) | Electrode formation method | |
JPS5662370A (en) | Manufacturing of semiconductor device | |
JPS53121466A (en) | Manufacture for semiconductor device |