JPS5752128A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5752128A
JPS5752128A JP12724580A JP12724580A JPS5752128A JP S5752128 A JPS5752128 A JP S5752128A JP 12724580 A JP12724580 A JP 12724580A JP 12724580 A JP12724580 A JP 12724580A JP S5752128 A JPS5752128 A JP S5752128A
Authority
JP
Japan
Prior art keywords
substrate
ions
injected
diffusion
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12724580A
Other languages
Japanese (ja)
Other versions
JPS6255689B2 (en
Inventor
Koichi Inoue
Naohiro Monma
Osamu Saito
Hideo Honma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12724580A priority Critical patent/JPS5752128A/en
Publication of JPS5752128A publication Critical patent/JPS5752128A/en
Publication of JPS6255689B2 publication Critical patent/JPS6255689B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To perform a diffusion and particularly a selective diffusion of Al, Ga ions in an Si substrate accurately and inexpensively by injecting Al or Ga ions in the Si substrate from the surface of the substrate, coating an Si layer on the surface thereof, heat treating the same, and diffusing the Al, Ga ions in the prescribed depth in the substrate. CONSTITUTION:Al, or Ga ions are injected from one main surface of an Si substrate, and an Si layer is coated on the surface. The Si this coated is amorphous Si, and the thickness is higher than 1mum. The substrate is heated to activate the injected ions, and the ions are diffused in the prescribed depth, e.g., 0.02-0.05mum in the substrate. Accordingly, the Si layer coated newly prevents the external diffusion of the injected ions and also prevents the segregation of the injected ions in the surface of the substrate, thereby facilitating the selective diffusion.
JP12724580A 1980-09-16 1980-09-16 Manufacture of semiconductor device Granted JPS5752128A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12724580A JPS5752128A (en) 1980-09-16 1980-09-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12724580A JPS5752128A (en) 1980-09-16 1980-09-16 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5752128A true JPS5752128A (en) 1982-03-27
JPS6255689B2 JPS6255689B2 (en) 1987-11-20

Family

ID=14955284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12724580A Granted JPS5752128A (en) 1980-09-16 1980-09-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5752128A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109196622A (en) * 2016-05-31 2019-01-11 欧洲激光***和解决方案公司 Deep knot electronic device and its manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109196622A (en) * 2016-05-31 2019-01-11 欧洲激光***和解决方案公司 Deep knot electronic device and its manufacturing method
CN109196622B (en) * 2016-05-31 2024-04-02 欧洲激光***和解决方案公司 Deep junction electronic device and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6255689B2 (en) 1987-11-20

Similar Documents

Publication Publication Date Title
JPS5752128A (en) Manufacture of semiconductor device
JPS5688358A (en) Manufacture of semiconductor device
JPS56115547A (en) Manufacture of semiconductor device
JPS55165640A (en) Manufacture of semiconductor device
JPS5618419A (en) Manufacture of semiconductor device
JPS6450472A (en) Amorphous semiconductor solar cell
JPS5676538A (en) Formation of insulating film on semiconductor substrate
JPS55145356A (en) Fabricating method of semiconductor device
JPS54149463A (en) Selective diffusion method aluminum
JPS57113233A (en) Manufacture of semiconductor device
JPS56120141A (en) Semiconductor device
JPS5346272A (en) Impurity diffusion method
JPS56110226A (en) Forming method of impurity doped region in semiconductor substrate
JPS572516A (en) Manufacture of semiconductor device
JPS5759322A (en) Manufacture of semiconductor device
JPS5687317A (en) Manufacture of semiconductor device
JPS56122126A (en) Manufacture of semiconductor device
JPS57121274A (en) Forming method for p-n junction
JPS56130917A (en) Manufacture of semiconductor device
JPS5769733A (en) Heat treatment of semiconductor substrate
JPS5710939A (en) Manufacture of semiconductor device
JPS55103736A (en) Hardening method of proving ink for semiconductor wafer
JPS5270762A (en) Electrode formation method of semiconductor element
JPS5795678A (en) Selenium semiconductor device and manufacturing method
JPS5694772A (en) Manufacturing method of semiconductor device