JPS57121274A - Forming method for p-n junction - Google Patents
Forming method for p-n junctionInfo
- Publication number
- JPS57121274A JPS57121274A JP638381A JP638381A JPS57121274A JP S57121274 A JPS57121274 A JP S57121274A JP 638381 A JP638381 A JP 638381A JP 638381 A JP638381 A JP 638381A JP S57121274 A JPS57121274 A JP S57121274A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- boron
- junction
- si3n4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 9
- 229910052796 boron Inorganic materials 0.000 abstract 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- -1 Boron ions Chemical class 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To obtain a P-N junction having short junction length by selectively forming an Si3N4 film on a substrate implanted with boron in a shallow depth, heat treating it, forming an SiO2 film which absorbs boron on the exposed part of the substrate, and diffusing the boron under the Si3N4 film in the sub strate. CONSTITUTION:Boron ions are implanted in 0.3mum from the surface in an N type Si substrate 5. A silicon nitride film 6 is selectively covered on the main surface of the substrate 5. The substrate 5 is heat treated, and an SiO2film 7 is formed on the Si exposed part not covered with the film 6. At this time, the boron existing in the vicinity of the surface of the substrate is all absorbed to the film 7, and the substrate becomes N type. On the other hand, the boron under the Si3N4 is activated to be diffused in the substrate, thereby forming a P type region 8. since the lower edge of the region 8 is shallower than the lower edge of the film 7, the end of the P-N junction 9 is faced with the side face of the film 7, but there is no increased diffusion length. In this manner, a diffused region which is smaller than the planar method can be formed
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP638381A JPS57121274A (en) | 1981-01-21 | 1981-01-21 | Forming method for p-n junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP638381A JPS57121274A (en) | 1981-01-21 | 1981-01-21 | Forming method for p-n junction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57121274A true JPS57121274A (en) | 1982-07-28 |
Family
ID=11636856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP638381A Pending JPS57121274A (en) | 1981-01-21 | 1981-01-21 | Forming method for p-n junction |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57121274A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05243020A (en) * | 1992-03-02 | 1993-09-21 | Rohm Co Ltd | Chip network type resistor |
-
1981
- 1981-01-21 JP JP638381A patent/JPS57121274A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05243020A (en) * | 1992-03-02 | 1993-09-21 | Rohm Co Ltd | Chip network type resistor |
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