EP0567985A3 - Process for thin film formation - Google Patents
Process for thin film formation Download PDFInfo
- Publication number
- EP0567985A3 EP0567985A3 EP19930106784 EP93106784A EP0567985A3 EP 0567985 A3 EP0567985 A3 EP 0567985A3 EP 19930106784 EP19930106784 EP 19930106784 EP 93106784 A EP93106784 A EP 93106784A EP 0567985 A3 EP0567985 A3 EP 0567985A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- thin film
- film formation
- irradiated region
- substrate
- hydrogen atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000004381 surface treatment Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Memories (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4136042A JP3048749B2 (en) | 1992-04-28 | 1992-04-28 | Thin film formation method |
JP136042/92 | 1992-04-28 | ||
JP13604292 | 1992-04-28 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0567985A2 EP0567985A2 (en) | 1993-11-03 |
EP0567985A3 true EP0567985A3 (en) | 1994-05-18 |
EP0567985B1 EP0567985B1 (en) | 2001-10-17 |
Family
ID=15165822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP93106784A Expired - Lifetime EP0567985B1 (en) | 1992-04-28 | 1993-04-27 | Process for thin film formation |
Country Status (8)
Country | Link |
---|---|
US (1) | US5604153A (en) |
EP (1) | EP0567985B1 (en) |
JP (1) | JP3048749B2 (en) |
KR (1) | KR0164614B1 (en) |
AT (1) | ATE207241T1 (en) |
DE (1) | DE69330921T2 (en) |
MY (1) | MY112082A (en) |
TW (1) | TW228603B (en) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5780362A (en) * | 1996-06-04 | 1998-07-14 | Wang; Qingfeng | CoSi2 salicide method |
JP3917698B2 (en) * | 1996-12-12 | 2007-05-23 | 株式会社半導体エネルギー研究所 | Laser annealing method and laser annealing apparatus |
FR2757881B1 (en) * | 1996-12-31 | 1999-04-09 | Univ Paris Curie | PROCESS FOR TREATING A SURFACE OF A SEMICONDUCTOR, CORRESPONDING DEVICE AND ASSOCIATED SEMICONDUCTOR |
JP3399814B2 (en) * | 1997-11-27 | 2003-04-21 | 科学技術振興事業団 | Method for manufacturing fine projection structure |
US6273099B1 (en) * | 1998-07-01 | 2001-08-14 | Taiwan Semiconductor Manufacturing Company | Simplified method for cleaning silicon wafers after application of laser marks |
AUPQ975900A0 (en) * | 2000-08-30 | 2000-09-21 | Unisearch Limited | A process for the fabrication of a quantum computer |
AU2001281595B2 (en) * | 2000-08-30 | 2006-02-09 | Newsouth Innovations Pty Limited | Single molecule array on silicon substrate for quantum computer |
KR100396891B1 (en) * | 2001-03-21 | 2003-09-03 | 삼성전자주식회사 | Method for forming metal wiring layer |
US6855584B2 (en) * | 2001-03-29 | 2005-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US7253032B2 (en) | 2001-04-20 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Method of flattening a crystallized semiconductor film surface by using a plate |
JP4854866B2 (en) * | 2001-04-27 | 2012-01-18 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
US6787460B2 (en) * | 2002-01-14 | 2004-09-07 | Samsung Electronics Co., Ltd. | Methods of forming metal layers in integrated circuit devices using selective deposition on edges of recesses and conductive contacts so formed |
KR100455382B1 (en) * | 2002-03-12 | 2004-11-06 | 삼성전자주식회사 | Method for forming metal interconnections of semiconductor device having dual damascene structure |
US20070117287A1 (en) * | 2005-11-23 | 2007-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
US9112003B2 (en) | 2011-12-09 | 2015-08-18 | Asm International N.V. | Selective formation of metallic films on metallic surfaces |
US9895715B2 (en) | 2014-02-04 | 2018-02-20 | Asm Ip Holding B.V. | Selective deposition of metals, metal oxides, and dielectrics |
US10047435B2 (en) | 2014-04-16 | 2018-08-14 | Asm Ip Holding B.V. | Dual selective deposition |
US9490145B2 (en) | 2015-02-23 | 2016-11-08 | Asm Ip Holding B.V. | Removal of surface passivation |
US10428421B2 (en) | 2015-08-03 | 2019-10-01 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
US10566185B2 (en) | 2015-08-05 | 2020-02-18 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
US10121699B2 (en) | 2015-08-05 | 2018-11-06 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
US10814349B2 (en) | 2015-10-09 | 2020-10-27 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
US10695794B2 (en) | 2015-10-09 | 2020-06-30 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
US9981286B2 (en) * | 2016-03-08 | 2018-05-29 | Asm Ip Holding B.V. | Selective formation of metal silicides |
US11081342B2 (en) | 2016-05-05 | 2021-08-03 | Asm Ip Holding B.V. | Selective deposition using hydrophobic precursors |
US10453701B2 (en) | 2016-06-01 | 2019-10-22 | Asm Ip Holding B.V. | Deposition of organic films |
US10373820B2 (en) | 2016-06-01 | 2019-08-06 | Asm Ip Holding B.V. | Deposition of organic films |
US9803277B1 (en) | 2016-06-08 | 2017-10-31 | Asm Ip Holding B.V. | Reaction chamber passivation and selective deposition of metallic films |
US11430656B2 (en) | 2016-11-29 | 2022-08-30 | Asm Ip Holding B.V. | Deposition of oxide thin films |
US11094535B2 (en) | 2017-02-14 | 2021-08-17 | Asm Ip Holding B.V. | Selective passivation and selective deposition |
US11501965B2 (en) | 2017-05-05 | 2022-11-15 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of metal oxide thin films |
KR102684628B1 (en) | 2017-05-16 | 2024-07-15 | 에이에스엠 아이피 홀딩 비.브이. | Selective PEALD of oxides on dielectrics |
US10900120B2 (en) | 2017-07-14 | 2021-01-26 | Asm Ip Holding B.V. | Passivation against vapor deposition |
JP7146690B2 (en) | 2018-05-02 | 2022-10-04 | エーエスエム アイピー ホールディング ビー.ブイ. | Selective layer formation using deposition and removal |
JP2020056104A (en) | 2018-10-02 | 2020-04-09 | エーエスエム アイピー ホールディング ビー.ブイ. | Selective passivation and selective deposition |
US11965238B2 (en) | 2019-04-12 | 2024-04-23 | Asm Ip Holding B.V. | Selective deposition of metal oxides on metal surfaces |
US11139163B2 (en) | 2019-10-31 | 2021-10-05 | Asm Ip Holding B.V. | Selective deposition of SiOC thin films |
TW202204658A (en) | 2020-03-30 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Simultaneous selective deposition of two different materials on two different surfaces |
TW202140832A (en) | 2020-03-30 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | Selective deposition of silicon oxide on metal surfaces |
TW202140833A (en) | 2020-03-30 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | Selective deposition of silicon oxide on dielectric surfaces relative to metal surfaces |
US11613807B2 (en) | 2020-07-29 | 2023-03-28 | The Curators Of The University Of Missouri | Area selective nanoscale-thin layer deposition via precise functional group lithography |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02137313A (en) * | 1988-11-18 | 1990-05-25 | Res Dev Corp Of Japan | Method for forming pattern on silicon solid surface |
EP0425084A1 (en) * | 1989-09-09 | 1991-05-02 | Canon Kabushiki Kaisha | Process for forming deposited film by use of alkyl aluminum hydride |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1595659A (en) * | 1978-05-25 | 1981-08-12 | Standard Telephones Cables Ltd | Providing conductive tracks on semiconductor devices |
US5196372A (en) * | 1989-09-09 | 1993-03-23 | Canon Kabushiki Kaisha | Process for forming metal deposited film containing aluminum as main component by use of alkyl hydride |
JP2721023B2 (en) * | 1989-09-26 | 1998-03-04 | キヤノン株式会社 | Deposition film formation method |
JP2726118B2 (en) * | 1989-09-26 | 1998-03-11 | キヤノン株式会社 | Deposition film formation method |
US5217756A (en) * | 1990-06-08 | 1993-06-08 | Nec Corporation | Selective chemical vapor deposition of aluminum, aluminum CVD materials and process for preparing the same |
ATE174450T1 (en) * | 1990-07-06 | 1998-12-15 | Tsubochi Kazuo | METHOD FOR PRODUCING A METAL LAYER |
-
1992
- 1992-04-28 JP JP4136042A patent/JP3048749B2/en not_active Expired - Fee Related
-
1993
- 1993-04-22 TW TW082103084A patent/TW228603B/zh not_active IP Right Cessation
- 1993-04-27 EP EP93106784A patent/EP0567985B1/en not_active Expired - Lifetime
- 1993-04-27 AT AT93106784T patent/ATE207241T1/en not_active IP Right Cessation
- 1993-04-27 DE DE69330921T patent/DE69330921T2/en not_active Expired - Lifetime
- 1993-04-28 KR KR1019930007194A patent/KR0164614B1/en not_active IP Right Cessation
- 1993-04-28 MY MYPI93000789A patent/MY112082A/en unknown
-
1995
- 1995-06-07 US US08/487,580 patent/US5604153A/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02137313A (en) * | 1988-11-18 | 1990-05-25 | Res Dev Corp Of Japan | Method for forming pattern on silicon solid surface |
EP0425084A1 (en) * | 1989-09-09 | 1991-05-02 | Canon Kabushiki Kaisha | Process for forming deposited film by use of alkyl aluminum hydride |
Non-Patent Citations (3)
Title |
---|
K.TSUBOUCHI ET AL.: "AREA SELECTIVE ALUMINUM PATTERNING BY ATOMIC HYDROGEN RESIST", EXTENDED ABSTRACTS OF THE 1992 INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES & MATERIALS, 26 August 1992 (1992-08-26), TSUKUBA,JP, pages 208 - 210 * |
K.TSUBOUCHI ET AL.: "COMPLETE PLANARIZATION OF VIA HOLES WITH ALUMINUM BY SELECTIVE AND NONSELECTIVE CHEMICAL VAPOR DEPOSITION", APPLIED PHYSICS LETTERS., vol. 57, no. 12, 17 September 1990 (1990-09-17), NEW YORK US, pages 1221 - 1223, XP000163177, DOI: doi:10.1063/1.103490 * |
PATENT ABSTRACTS OF JAPAN vol. 14, no. 380 (E - 0965) 16 August 1990 (1990-08-16) * |
Also Published As
Publication number | Publication date |
---|---|
JP3048749B2 (en) | 2000-06-05 |
KR0164614B1 (en) | 1999-02-01 |
EP0567985B1 (en) | 2001-10-17 |
MY112082A (en) | 2001-04-30 |
TW228603B (en) | 1994-08-21 |
DE69330921T2 (en) | 2002-04-25 |
EP0567985A2 (en) | 1993-11-03 |
DE69330921D1 (en) | 2001-11-22 |
JPH0629220A (en) | 1994-02-04 |
KR930022602A (en) | 1993-11-24 |
US5604153A (en) | 1997-02-18 |
ATE207241T1 (en) | 2001-11-15 |
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