JPS5737854A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5737854A
JPS5737854A JP11343280A JP11343280A JPS5737854A JP S5737854 A JPS5737854 A JP S5737854A JP 11343280 A JP11343280 A JP 11343280A JP 11343280 A JP11343280 A JP 11343280A JP S5737854 A JPS5737854 A JP S5737854A
Authority
JP
Japan
Prior art keywords
wiring
sio2
melted
mutually
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11343280A
Other languages
Japanese (ja)
Inventor
Shintaro Ito
Hajime Sawazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11343280A priority Critical patent/JPS5737854A/en
Publication of JPS5737854A publication Critical patent/JPS5737854A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To ensure the conduction at a desired position by a method wherein wiring is stacked through a layer insulating film, partially heated and mutually melted. CONSTITUTION:The Al wiring 3 is formed on a SiO2 film 2 on an Si substrate 1. SiO2 4 is shaped through a CVD method, and the Al wiring 5 is stacked. The wiring is irradiated by a CO2 laser in vacuum, and an irradiating area is determined from a diameter of the beams and the desired conductive area. The one parts of the Al wiring 3, the SiO2 4 and the Al wiring 5 respectively are melted mutually by partial heating through irradiation, and a conductive passage 7 is shaped. When the layer insulating film 4 is made of an inorganic substance such as SiO2, both Al layers are melted mutually or evaporated and conducted when the film 4 is under a melted condition. When it is made of an organic substance such as polymidide, they are carbonized and conducted. According to this constitution, the opening of an intermediate window at an undesired position is prevented, and the shortening of a processing period and the improvement of yield are attained.
JP11343280A 1980-08-20 1980-08-20 Semiconductor device Pending JPS5737854A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11343280A JPS5737854A (en) 1980-08-20 1980-08-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11343280A JPS5737854A (en) 1980-08-20 1980-08-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5737854A true JPS5737854A (en) 1982-03-02

Family

ID=14612070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11343280A Pending JPS5737854A (en) 1980-08-20 1980-08-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5737854A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142658A (en) * 1986-12-04 1988-06-15 Sony Corp Connection of wiring
US5333031A (en) * 1991-08-21 1994-07-26 Minolta Camera Kabushiki Kaisha Camera having a liquid crystal focusing screen
US5903788A (en) * 1993-01-07 1999-05-11 Minolta Co., Ltd. Camera

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142658A (en) * 1986-12-04 1988-06-15 Sony Corp Connection of wiring
US5333031A (en) * 1991-08-21 1994-07-26 Minolta Camera Kabushiki Kaisha Camera having a liquid crystal focusing screen
US5903788A (en) * 1993-01-07 1999-05-11 Minolta Co., Ltd. Camera

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