JP6546319B2 - 携帯電話、パーソナルコンピュータ、及び表示装置 - Google Patents
携帯電話、パーソナルコンピュータ、及び表示装置 Download PDFInfo
- Publication number
- JP6546319B2 JP6546319B2 JP2018110457A JP2018110457A JP6546319B2 JP 6546319 B2 JP6546319 B2 JP 6546319B2 JP 2018110457 A JP2018110457 A JP 2018110457A JP 2018110457 A JP2018110457 A JP 2018110457A JP 6546319 B2 JP6546319 B2 JP 6546319B2
- Authority
- JP
- Japan
- Prior art keywords
- pixel
- organic
- light emitting
- pixels
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000002347 injection Methods 0.000 claims description 33
- 239000007924 injection Substances 0.000 claims description 33
- 239000004065 semiconductor Substances 0.000 claims description 20
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 8
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 207
- 239000010410 layer Substances 0.000 description 202
- 238000005401 electroluminescence Methods 0.000 description 182
- 150000001875 compounds Chemical class 0.000 description 59
- 239000000463 material Substances 0.000 description 50
- 239000000758 substrate Substances 0.000 description 41
- 235000019557 luminance Nutrition 0.000 description 40
- 230000005525 hole transport Effects 0.000 description 37
- 239000007789 gas Substances 0.000 description 33
- 238000000034 method Methods 0.000 description 29
- 239000012535 impurity Substances 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 19
- 238000005530 etching Methods 0.000 description 17
- 230000006870 function Effects 0.000 description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- 229910052799 carbon Inorganic materials 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000004044 response Effects 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000000737 periodic effect Effects 0.000 description 9
- 239000000460 chlorine Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 7
- 229910003437 indium oxide Inorganic materials 0.000 description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 7
- 150000002894 organic compounds Chemical class 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 229910001887 tin oxide Inorganic materials 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- IUFDZNVMARBLOJ-UHFFFAOYSA-K aluminum;quinoline-2-carboxylate Chemical compound [Al+3].C1=CC=CC2=NC(C(=O)[O-])=CC=C21.C1=CC=CC2=NC(C(=O)[O-])=CC=C21.C1=CC=CC2=NC(C(=O)[O-])=CC=C21 IUFDZNVMARBLOJ-UHFFFAOYSA-K 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- -1 aromatic amine compound Chemical class 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000002923 metal particle Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- YNPNZTXNASCQKK-UHFFFAOYSA-N Phenanthrene Natural products C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- JFLKFZNIIQFQBS-FNCQTZNRSA-N trans,trans-1,4-Diphenyl-1,3-butadiene Chemical group C=1C=CC=CC=1\C=C\C=C\C1=CC=CC=C1 JFLKFZNIIQFQBS-FNCQTZNRSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
(1)T.Tsutsui, C.Adachi, S.Saito, Photochemical Processes in Organized Molecular Systems, ed.K.Honda, (Elsevier Sci.Pub., Tokyo,1991) p.437. (2)M.A.Baldo, D.F.O'Brien, Y.You, A.Shoustikov, S.Sibley, M.E.Thompson, S.R.Forrest, Nature 395 (1998) p.151. (3)M.A.Baldo, S.Lamansky, P.E.Burrrows, M.E.Thompson, S.R.Forrest, Appl.Phys.Lett.,75 (1999) p.4. (4)T.Tsutsui, M.J.Yang, M.Yahiro, K.Nakamura, T.Watanabe, T.tsuji, Y.Fukuda, T.Wakimoto, S.Mayaguchi, Jpn.Appl.Phys., 38 (12B) (1999) L1502.
Claims (6)
- 音声出力部と、音声入力部と、表示部と、を有する携帯電話であって、
前記表示部は、画素部を有するアクティブマトリクス型発光装置を有し、
前記画素部は、第1の画素と、第2の画素と、第3の画素とを有し、
前記第1の画素と前記第2の画素と前記第3の画素とは、それぞれ、
有機EL素子と、
ソース又はドレインの一方が前記有機EL素子の陽極と電気的に接続され、かつ前記有機EL素子に流れる電流を制御する電流制御トランジスタと、
映像データ信号を伝送するスイッチングトランジスタと、
一方の電極が前記電流制御トランジスタのゲートと電気的に接続され、かつ前記電流制御トランジスタのゲートに印加される電圧を保持するコンデンサと、
前記コンデンサの他方の電極及び前記電流制御トランジスタのソース又はドレインの他方と電気的に接続される電流供給線と、を有し、
前記第1の画素乃至前記第3の画素のそれぞれの前記電流供給線には、同じ電圧が印加され、
前記第1の画素乃至前記第3の画素のそれぞれの前記有機EL素子は、前記陽極と、前記陽極上の正孔注入層と、前記正孔注入層上の発光層と、前記発光層上の陰極と、を有し、
前記第1の画素乃至前記第3の画素のそれぞれの前記正孔注入層は、前記第1の画素乃至前記第3の画素において共通の層として設けられ、
前記第1の画素乃至前記第3の画素のそれぞれの前記陰極は、前記第1の画素乃至前記第3の画素において共通の層として設けられ、
前記第1の画素の前記有機EL素子または前記第2の画素の前記有機EL素子は、トリプレットより発光し、
前記第3の画素の前記有機EL素子は、シングレットより発光し、
前記第1の画素の前記有機EL素子は、赤色に発光し、
前記第2の画素の前記有機EL素子は、緑色に発光し、
前記第3の画素の前記有機EL素子は、青色に発光し、
隣り合う前記陽極の間を埋めるように絶縁膜が設けられている携帯電話。 - 筐体と、表示部と、を有するパーソナルコンピュータであって、
前記表示部は、画素部を有するアクティブマトリクス型発光装置を有し、
前記画素部は、第1の画素と、第2の画素と、第3の画素とを有し、
前記第1の画素と前記第2の画素と前記第3の画素とは、それぞれ、
有機EL素子と、
ソース又はドレインの一方が前記有機EL素子の陽極と電気的に接続され、かつ前記有機EL素子に流れる電流を制御する電流制御トランジスタと、
映像データ信号を伝送するスイッチングトランジスタと、
一方の電極が前記電流制御トランジスタのゲートと電気的に接続され、かつ前記電流制御トランジスタのゲートに印加される電圧を保持するコンデンサと、
前記コンデンサの他方の電極及び前記電流制御トランジスタのソース又はドレインの他方と電気的に接続される電流供給線と、を有し、
前記第1の画素乃至前記第3の画素のそれぞれの前記電流供給線には、同じ電圧が印加され、
前記第1の画素乃至前記第3の画素のそれぞれの前記有機EL素子は、前記陽極と、前記陽極上の正孔注入層と、前記正孔注入層上の発光層と、前記発光層上の陰極と、を有し、
前記第1の画素乃至前記第3の画素のそれぞれの前記正孔注入層は、前記第1の画素乃至前記第3の画素において共通の層として設けられ、
前記第1の画素乃至前記第3の画素のそれぞれの前記陰極は、前記第1の画素乃至前記第3の画素において共通の層として設けられ、
前記第1の画素の前記有機EL素子または前記第2の画素の前記有機EL素子は、トリプレットより発光し、
前記第3の画素の前記有機EL素子は、シングレットより発光し、
前記第1の画素の前記有機EL素子は、赤色に発光し、
前記第2の画素の前記有機EL素子は、緑色に発光し、
前記第3の画素の前記有機EL素子は、青色に発光し、
隣り合う前記陽極の間を埋めるように絶縁膜が設けられているパーソナルコンピュータ。 - 筐体と、表示部と、を有する表示装置であって、
前記表示部は、画素部を有するアクティブマトリクス型発光装置を有し、
前記画素部は、第1の画素と、第2の画素と、第3の画素とを有し、
前記第1の画素と前記第2の画素と前記第3の画素とは、それぞれ、
有機EL素子と、
ソース又はドレインの一方が前記有機EL素子の陽極と電気的に接続され、かつ前記有機EL素子に流れる電流を制御する電流制御トランジスタと、
映像データ信号を伝送するスイッチングトランジスタと、
一方の電極が前記電流制御トランジスタのゲートと電気的に接続され、かつ前記電流制御トランジスタのゲートに印加される電圧を保持するコンデンサと、
前記コンデンサの他方の電極及び前記電流制御トランジスタのソース又はドレインの他方と電気的に接続される電流供給線と、を有し、
前記第1の画素乃至前記第3の画素のそれぞれの前記電流供給線には、同じ電圧が印加され、
前記第1の画素乃至前記第3の画素のそれぞれの前記有機EL素子は、前記陽極と、前記陽極上の正孔注入層と、前記正孔注入層上の発光層と、前記発光層上の陰極と、を有し、
前記第1の画素乃至前記第3の画素のそれぞれの前記正孔注入層は、前記第1の画素乃至前記第3の画素において共通の層として設けられ、
前記第1の画素乃至前記第3の画素のそれぞれの前記陰極は、前記第1の画素乃至前記第3の画素において共通の層として設けられ、
前記第1の画素の前記有機EL素子または前記第2の画素の前記有機EL素子は、トリプレットより発光し、
前記第3の画素の前記有機EL素子は、シングレットより発光し、
前記第1の画素の前記有機EL素子は、赤色に発光し、
前記第2の画素の前記有機EL素子は、緑色に発光し、
前記第3の画素の前記有機EL素子は、青色に発光し、
隣り合う前記陽極の間を埋めるように絶縁膜が設けられている表示装置。 - 請求項1において、
前記第1の画素乃至前記第3の画素のそれぞれの前記陰極は、イッテルビウムを有する携帯電話。 - 請求項1又は請求項4において、
前記第1の画素乃至前記第3の画素のそれぞれの前記有機EL素子は、前記発光層と前記陰極との間に、電子輸送層を有し、
前記第1の画素乃至前記第3の画素のそれぞれの前記電子輸送層は、前記第1の画素乃至前記第3の画素において共通の層として設けられる携帯電話。 - 請求項1、請求項4、又は請求項5において、
前記第1乃至前記第3の電流制御トランジスタ並びに前記第1のスイッチングトランジスタ乃至前記第3のスイッチングトランジスタは、それぞれ半導体膜として結晶質珪素膜を有する携帯電話。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000258260 | 2000-08-28 | ||
JP2000258260 | 2000-08-28 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016185081A Division JP2017022406A (ja) | 2000-08-28 | 2016-09-23 | 発光装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019093311A Division JP2019145844A (ja) | 2000-08-28 | 2019-05-17 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018142741A JP2018142741A (ja) | 2018-09-13 |
JP6546319B2 true JP6546319B2 (ja) | 2019-07-17 |
Family
ID=18746597
Family Applications (8)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010210410A Withdrawn JP2010282981A (ja) | 2000-08-28 | 2010-09-21 | 発光装置 |
JP2013228090A Withdrawn JP2014027306A (ja) | 2000-08-28 | 2013-11-01 | 発光装置 |
JP2014250030A Withdrawn JP2015046412A (ja) | 2000-08-28 | 2014-12-10 | 発光装置 |
JP2016185081A Withdrawn JP2017022406A (ja) | 2000-08-28 | 2016-09-23 | 発光装置 |
JP2018110457A Expired - Lifetime JP6546319B2 (ja) | 2000-08-28 | 2018-06-08 | 携帯電話、パーソナルコンピュータ、及び表示装置 |
JP2019093311A Withdrawn JP2019145844A (ja) | 2000-08-28 | 2019-05-17 | 発光装置 |
JP2019131694A Withdrawn JP2019176191A (ja) | 2000-08-28 | 2019-07-17 | 発光装置 |
JP2021030289A Withdrawn JP2021082845A (ja) | 2000-08-28 | 2021-02-26 | 発光装置 |
Family Applications Before (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010210410A Withdrawn JP2010282981A (ja) | 2000-08-28 | 2010-09-21 | 発光装置 |
JP2013228090A Withdrawn JP2014027306A (ja) | 2000-08-28 | 2013-11-01 | 発光装置 |
JP2014250030A Withdrawn JP2015046412A (ja) | 2000-08-28 | 2014-12-10 | 発光装置 |
JP2016185081A Withdrawn JP2017022406A (ja) | 2000-08-28 | 2016-09-23 | 発光装置 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019093311A Withdrawn JP2019145844A (ja) | 2000-08-28 | 2019-05-17 | 発光装置 |
JP2019131694A Withdrawn JP2019176191A (ja) | 2000-08-28 | 2019-07-17 | 発光装置 |
JP2021030289A Withdrawn JP2021082845A (ja) | 2000-08-28 | 2021-02-26 | 発光装置 |
Country Status (2)
Country | Link |
---|---|
US (7) | US6864628B2 (ja) |
JP (8) | JP2010282981A (ja) |
Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7339317B2 (en) * | 2000-06-05 | 2008-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device having triplet and singlet compound in light-emitting layers |
US6864628B2 (en) * | 2000-08-28 | 2005-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device comprising light-emitting layer having triplet compound and light-emitting layer having singlet compound |
EP2822019B1 (en) * | 2001-05-16 | 2018-01-17 | The Trustees of Princeton University | High efficiency multi-color electro-phosphorescent OLEDs |
KR100439648B1 (ko) * | 2001-08-29 | 2004-07-12 | 엘지.필립스 엘시디 주식회사 | 유기전계발광소자 |
US6734457B2 (en) | 2001-11-27 | 2004-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US7038239B2 (en) | 2002-04-09 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US20030189215A1 (en) | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
JP3989763B2 (ja) | 2002-04-15 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
JP4217428B2 (ja) | 2002-05-31 | 2009-02-04 | キヤノン株式会社 | 表示装置 |
US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
JP4683924B2 (ja) * | 2002-12-19 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 発光材料、電界発光素子、及び発光装置 |
KR101236235B1 (ko) * | 2002-12-26 | 2013-02-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
JP3650101B2 (ja) * | 2003-02-04 | 2005-05-18 | 三洋電機株式会社 | 有機エレクトロルミネッセンス装置およびその製造方法 |
JP4754772B2 (ja) * | 2003-05-16 | 2011-08-24 | 株式会社半導体エネルギー研究所 | 発光装置及び該発光装置を用いた電子機器 |
KR101172466B1 (ko) | 2003-08-29 | 2012-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제작방법 |
KR100543003B1 (ko) * | 2003-09-15 | 2006-01-20 | 삼성에스디아이 주식회사 | 풀칼라 유기 전계 발광 소자 및 그의 제조 방법 |
KR100560789B1 (ko) * | 2003-11-25 | 2006-03-13 | 삼성에스디아이 주식회사 | 풀칼라유기전계발광소자 및 그의 제조방법 |
KR20050050487A (ko) * | 2003-11-25 | 2005-05-31 | 삼성에스디아이 주식회사 | 풀칼라 유기 전계 발광 소자 |
KR100659530B1 (ko) * | 2003-11-26 | 2006-12-19 | 삼성에스디아이 주식회사 | 풀칼라 유기전계발광소자 |
US7495644B2 (en) * | 2003-12-26 | 2009-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing display device |
JP4743577B2 (ja) * | 2004-01-09 | 2011-08-10 | 大日本印刷株式会社 | 発光素子およびその製造方法 |
TWI234412B (en) * | 2004-04-08 | 2005-06-11 | Au Optronics Corp | Organic electroluminescent element |
US7733441B2 (en) * | 2004-06-03 | 2010-06-08 | Semiconductor Energy Labortory Co., Ltd. | Organic electroluminescent lighting system provided with an insulating layer containing fluorescent material |
KR100626005B1 (ko) * | 2004-06-09 | 2006-09-20 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 |
KR100759548B1 (ko) * | 2004-10-15 | 2007-09-18 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 |
CN100521283C (zh) * | 2004-11-26 | 2009-07-29 | 株式会社半导体能源研究所 | 发光元件、发光器件和电子器件 |
JP2006164708A (ja) * | 2004-12-06 | 2006-06-22 | Semiconductor Energy Lab Co Ltd | 電子機器および発光装置 |
US20060234784A1 (en) * | 2004-12-21 | 2006-10-19 | Silviu Reinhorn | Collapsible portable display |
US20060232578A1 (en) * | 2004-12-21 | 2006-10-19 | Silviu Reinhorn | Collapsible portable display |
KR101030008B1 (ko) * | 2004-12-31 | 2011-04-20 | 삼성모바일디스플레이주식회사 | 유기 전계 발광 소자 |
EP1847545B1 (en) * | 2005-01-31 | 2013-03-06 | Ube Industries, Ltd. | Substituted ethynyl gold-nitrogenated heterocyclic carbene complex and organic electroluminescent device using same |
KR100683766B1 (ko) * | 2005-03-30 | 2007-02-15 | 삼성에스디아이 주식회사 | 평판표시장치 및 그의 제조방법 |
US9070884B2 (en) * | 2005-04-13 | 2015-06-30 | Universal Display Corporation | Hybrid OLED having phosphorescent and fluorescent emitters |
JP2006331685A (ja) * | 2005-05-23 | 2006-12-07 | Fujifilm Holdings Corp | 電極付き基板及びその製造方法、電気光学装置、エレクトロルミネッセント(el)装置 |
TWI471058B (zh) * | 2005-06-01 | 2015-01-21 | Univ Princeton | 螢光之經過濾電磷光作用 |
US7474048B2 (en) | 2005-06-01 | 2009-01-06 | The Trustees Of Princeton University | Fluorescent filtered electrophosphorescence |
KR101158873B1 (ko) * | 2005-06-30 | 2012-06-25 | 엘지디스플레이 주식회사 | 유기전계발광 표시장치 |
JP4753373B2 (ja) | 2005-09-16 | 2011-08-24 | 株式会社半導体エネルギー研究所 | 表示装置及び表示装置の駆動方法 |
US9112170B2 (en) * | 2006-03-21 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
JP2007265763A (ja) * | 2006-03-28 | 2007-10-11 | Canon Inc | フルカラー有機elパネル |
US20100215838A1 (en) * | 2006-04-12 | 2010-08-26 | Chi-Hsien Huang | Method of manufacturing organic electroluminescent device |
US20070241663A1 (en) * | 2006-04-12 | 2007-10-18 | Toppoly Optoelectronics Corp. | Organic electroluminescent device |
KR100858824B1 (ko) * | 2007-05-31 | 2008-09-17 | 삼성에스디아이 주식회사 | 유기 발광 소자 및 이의 제조 방법 |
CN101340187B (zh) * | 2007-07-02 | 2010-06-02 | 鸿富锦精密工业(深圳)有限公司 | 无触点式电子开关 |
US20090079341A1 (en) * | 2007-09-25 | 2009-03-26 | Tsai Yaw-Ming A | Backplane structures for solution processed electronic devices |
US8183764B2 (en) * | 2008-03-26 | 2012-05-22 | Toppan Printing Co., Ltd. | Organic electroluminescence element, manufacturing method for an organic electroluminescence element and display unit |
EP2460183A4 (en) | 2009-07-31 | 2015-10-07 | Semiconductor Energy Lab | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
KR101135541B1 (ko) | 2010-04-01 | 2012-04-13 | 삼성모바일디스플레이주식회사 | 유기 발광 장치 |
KR101751044B1 (ko) * | 2010-12-27 | 2017-07-04 | 삼성디스플레이 주식회사 | 유기발광표시패널 및 그의 제조방법 |
CN106025099B (zh) | 2011-04-12 | 2018-09-07 | 精工爱普生株式会社 | 发光元件、发光装置、认证装置以及电子设备 |
JP5765034B2 (ja) * | 2011-04-18 | 2015-08-19 | セイコーエプソン株式会社 | チアジアゾール系化合物、発光素子用化合物、発光素子、発光装置、認証装置および電子機器 |
JP5790279B2 (ja) | 2011-08-09 | 2015-10-07 | セイコーエプソン株式会社 | 発光素子、発光装置および電子機器 |
KR20130018547A (ko) | 2011-08-09 | 2013-02-25 | 세이코 엡슨 가부시키가이샤 | 티아디아졸계 화합물, 발광 소자, 발광 장치, 인증 장치, 전자 기기 |
KR101821167B1 (ko) * | 2011-08-30 | 2018-01-24 | 삼성디스플레이 주식회사 | 반사 구조를 갖는 전극을 포함하는 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
JP5970811B2 (ja) | 2011-12-28 | 2016-08-17 | セイコーエプソン株式会社 | 発光素子、発光装置および電子機器 |
US9324952B2 (en) | 2012-02-28 | 2016-04-26 | Seiko Epson Corporation | Thiadiazole, compound for light-emitting elements, light-emitting element, light-emitting apparatus, authentication apparatus, and electronic device |
TWI675222B (zh) | 2012-05-09 | 2019-10-21 | 日商半導體能源研究所股份有限公司 | 驅動半導體裝置的方法 |
CN103772416B (zh) | 2012-10-18 | 2018-01-19 | 精工爱普生株式会社 | 噻二唑系化合物、发光元件用化合物、发光元件、发光装置、认证装置以及电子设备 |
KR102479472B1 (ko) * | 2013-04-15 | 2022-12-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
KR102132697B1 (ko) * | 2013-12-05 | 2020-07-10 | 엘지디스플레이 주식회사 | 휘어진 디스플레이 장치 |
US10270041B2 (en) | 2015-08-28 | 2019-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
US10930855B2 (en) | 2015-12-17 | 2021-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, lighting device, lighting system, and guidance system |
US10312459B2 (en) * | 2016-01-27 | 2019-06-04 | Nichem Fine Technology Co., Ltd. | Compound and organic electronic device using the same |
US10388900B2 (en) | 2016-07-28 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
KR20180074861A (ko) * | 2016-12-23 | 2018-07-04 | 삼성디스플레이 주식회사 | 가요성 표시 장치 및 이의 제조 방법 |
KR20180077029A (ko) | 2016-12-28 | 2018-07-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 유기 화합물, 발광 소자, 발광 장치, 전자 기기, 표시 장치, 및 조명 장치 |
US10044958B1 (en) | 2017-02-08 | 2018-08-07 | Sensors Unlimited, Inc. | In-pixel digital gain and offset corrections |
CN109782458B (zh) * | 2017-11-14 | 2020-11-06 | 京东方科技集团股份有限公司 | 显示面板及其驱动方法、显示装置 |
EP3866715A4 (en) * | 2018-10-17 | 2022-11-16 | University of Florida Research Foundation | ESOPHAGEAL TEMPERATURE REGULATION DURING CARDIAC ABLATION |
WO2020208774A1 (ja) * | 2019-04-11 | 2020-10-15 | シャープ株式会社 | 発光素子および表示装置 |
CN110071156B (zh) * | 2019-04-28 | 2022-04-26 | 武汉华星光电半导体显示技术有限公司 | Oled显示面板及其制备方法 |
Family Cites Families (132)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0794278B2 (ja) | 1986-05-28 | 1995-10-11 | 三菱重工業株式会社 | 液体充填方法 |
JPH0793195B2 (ja) * | 1986-05-28 | 1995-10-09 | 沖電気工業株式会社 | Elデイスプレイパネル |
EP0278038A1 (de) | 1987-02-13 | 1988-08-17 | Battelle-Institut e.V. | Aktiver Bildschirm in Flachbauweise |
DE3819481C1 (ja) * | 1988-06-08 | 1989-11-30 | Atec-Weiss Kg, 4426 Vreden, De | |
JPH0260088A (ja) * | 1988-08-24 | 1990-02-28 | Hitachi Ltd | 薄膜elパネル |
EP0390551B1 (en) | 1989-03-31 | 1996-07-10 | Kabushiki Kaisha Toshiba | Organic electroluminescent device |
JP2991450B2 (ja) | 1990-02-06 | 1999-12-20 | 株式会社東芝 | 有機膜発光素子 |
JPH03230583A (ja) | 1990-02-06 | 1991-10-14 | Toshiba Corp | 有機膜発光素子 |
JPH03115486A (ja) | 1989-09-29 | 1991-05-16 | Toshiba Corp | 有機電界発光素子 |
JPH02261889A (ja) | 1989-03-31 | 1990-10-24 | Toshiba Corp | 有機電界発光素子 |
JP2780880B2 (ja) | 1990-11-28 | 1998-07-30 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子および該素子を用いた発光装置 |
US5427858A (en) | 1990-11-30 | 1995-06-27 | Idemitsu Kosan Company Limited | Organic electroluminescence device with a fluorine polymer layer |
JPH0513169A (ja) * | 1991-01-24 | 1993-01-22 | Kenwood Corp | 多色発光薄膜el素子 |
JPH04320483A (ja) | 1991-04-19 | 1992-11-11 | Mitsubishi Kasei Corp | 有機電界発光素子 |
JPH0517765A (ja) | 1991-07-16 | 1993-01-26 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネツセンス素子 |
JP2530056Y2 (ja) * | 1991-07-29 | 1997-03-26 | 株式会社ケンウッド | マルチカラー薄膜el素子 |
JPH05179238A (ja) | 1992-01-07 | 1993-07-20 | Sekisui Chem Co Ltd | 有機電界発光素子 |
JP3300069B2 (ja) * | 1992-11-19 | 2002-07-08 | パイオニア株式会社 | 有機エレクトロルミネッセンス素子 |
US5501900A (en) | 1993-03-03 | 1996-03-26 | Dai Nippon Printing Co., Ltd. | Black matrix substrate, and color filter and liquid crystal display device using the same |
JP3283620B2 (ja) * | 1993-03-08 | 2002-05-20 | 大日本印刷株式会社 | ブラックマトリックス基板 |
US5529853A (en) * | 1993-03-17 | 1996-06-25 | Sanyo Electric Co., Ltd. | Organic electroluminescent element |
JP3071091B2 (ja) | 1993-03-17 | 2000-07-31 | 三洋電機株式会社 | 電界発光素子 |
JPH0794278A (ja) | 1993-09-21 | 1995-04-07 | Fuji Electric Co Ltd | 有機薄膜発光素子 |
JPH07106066A (ja) | 1993-09-30 | 1995-04-21 | Sanyo Electric Co Ltd | 有機電界発光素子 |
JPH07159760A (ja) * | 1993-12-02 | 1995-06-23 | Hitachi Ltd | 液晶表示装置 |
JPH07169569A (ja) * | 1993-12-17 | 1995-07-04 | Idemitsu Kosan Co Ltd | 有機el素子およびその製造方法 |
JP2795207B2 (ja) | 1994-03-31 | 1998-09-10 | 株式会社デンソー | エレクトロルミネッセンス表示器及びその製造方法 |
US5485055A (en) | 1994-07-11 | 1996-01-16 | Alliedsignal Inc. | Active matrix electroluminescent display having increased brightness and method for making the display |
JPH0829794A (ja) * | 1994-07-15 | 1996-02-02 | Sharp Corp | 液晶表示装置 |
DE69514495T2 (de) | 1994-08-11 | 2000-08-10 | Koninklijke Philips Electronics N.V., Eindhoven | Festkörper-bildverstärker und röntgenuntersuchungsgerät mit einem festkörper-bildverstärker |
US5587329A (en) | 1994-08-24 | 1996-12-24 | David Sarnoff Research Center, Inc. | Method for fabricating a switching transistor having a capacitive network proximate a drift region |
JP3578417B2 (ja) * | 1994-10-21 | 2004-10-20 | 出光興産株式会社 | 有機elデバイス |
JPH08148282A (ja) * | 1994-11-17 | 1996-06-07 | Sharp Corp | 薄膜el素子 |
US5703436A (en) | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
US5684365A (en) * | 1994-12-14 | 1997-11-04 | Eastman Kodak Company | TFT-el display panel using organic electroluminescent media |
DE69535970D1 (de) | 1994-12-14 | 2009-08-06 | Eastman Kodak Co | Elektrolumineszente Vorrichtung mit einer organischen elektrolumineszenten Schicht |
JP3401356B2 (ja) | 1995-02-21 | 2003-04-28 | パイオニア株式会社 | 有機エレクトロルミネッセンスディスプレイパネルとその製造方法 |
JP3412076B2 (ja) * | 1995-03-08 | 2003-06-03 | 株式会社リコー | 有機el素子 |
JP3636777B2 (ja) * | 1995-07-04 | 2005-04-06 | Tdk株式会社 | 画像表示装置 |
JPH09114398A (ja) | 1995-10-24 | 1997-05-02 | Idemitsu Kosan Co Ltd | 有機elディスプレイ |
JPH1039791A (ja) | 1996-07-22 | 1998-02-13 | Mitsubishi Electric Corp | 有機エレクトロルミネッセンス表示装置 |
JP3793607B2 (ja) | 1996-08-14 | 2006-07-05 | Tdk株式会社 | クマリン誘導体を用いた有機el素子 |
JPH1060425A (ja) | 1996-08-19 | 1998-03-03 | Matsushita Electric Ind Co Ltd | 有機エレクトロルミネセンス素子 |
JP3763325B2 (ja) | 1996-09-24 | 2006-04-05 | ソニー株式会社 | 有機電界発光素子 |
JP3471181B2 (ja) | 1996-11-18 | 2003-11-25 | 大日精化工業株式会社 | 光制御方法および光制御装置 |
JP3530362B2 (ja) | 1996-12-19 | 2004-05-24 | 三洋電機株式会社 | 自発光型画像表示装置 |
JPH10183112A (ja) * | 1996-12-27 | 1998-07-14 | Sony Corp | 電界発光素子 |
JPH10319872A (ja) | 1997-01-17 | 1998-12-04 | Xerox Corp | アクティブマトリクス有機発光ダイオード表示装置 |
JPH10319909A (ja) | 1997-05-22 | 1998-12-04 | Casio Comput Co Ltd | 表示装置及びその駆動方法 |
US5990629A (en) | 1997-01-28 | 1999-11-23 | Casio Computer Co., Ltd. | Electroluminescent display device and a driving method thereof |
JPH10214060A (ja) | 1997-01-28 | 1998-08-11 | Casio Comput Co Ltd | 電界発光表示装置およびその駆動方法 |
EP1830342B1 (en) * | 1997-02-17 | 2013-01-23 | Seiko Epson Corporation | Pixel driving circuit for an electroluminescent display |
JP3641342B2 (ja) | 1997-03-07 | 2005-04-20 | Tdk株式会社 | 半導体装置及び有機elディスプレイ装置 |
JP3828980B2 (ja) | 1997-03-13 | 2006-10-04 | 出光興産株式会社 | 表示素子 |
US5935720A (en) * | 1997-04-07 | 1999-08-10 | Eastman Kodak Company | Red organic electroluminescent devices |
JP3760556B2 (ja) | 1997-04-07 | 2006-03-29 | 三菱化学株式会社 | 有機電界発光素子 |
JPH10288965A (ja) | 1997-04-14 | 1998-10-27 | Casio Comput Co Ltd | 表示装置 |
EP1020510A4 (en) * | 1997-05-15 | 2004-12-29 | Sanyo Electric Co | ORGANIC ELECTROLUMINESCENT ELEMENT |
US5928802A (en) * | 1997-05-16 | 1999-07-27 | Eastman Kodak Company | Efficient blue organic electroluminescent devices |
DE69841818D1 (de) * | 1997-05-22 | 2010-09-23 | Panasonic Corp | Schaltungsanordnung zur Abtastumsetzung für eine Flüssigkristallanzeige |
US6175345B1 (en) | 1997-06-02 | 2001-01-16 | Canon Kabushiki Kaisha | Electroluminescence device, electroluminescence apparatus, and production methods thereof |
JP3541625B2 (ja) | 1997-07-02 | 2004-07-14 | セイコーエプソン株式会社 | 表示装置及びアクティブマトリクス基板 |
US6072278A (en) | 1997-08-06 | 2000-06-06 | Alliedsignal Inc. | High capacitance pixel for electronic displays |
JP3580092B2 (ja) * | 1997-08-21 | 2004-10-20 | セイコーエプソン株式会社 | アクティブマトリクス型表示装置 |
JP3830238B2 (ja) | 1997-08-29 | 2006-10-04 | セイコーエプソン株式会社 | アクティブマトリクス型装置 |
JP3539844B2 (ja) | 1997-10-07 | 2004-07-07 | シャープ株式会社 | 有機エレクトロルミネッセンス素子 |
JP2914361B2 (ja) * | 1997-10-09 | 1999-06-28 | 日本電気株式会社 | 有機薄膜el素子 |
EP2262030A3 (en) * | 1997-10-09 | 2012-06-20 | The Trustees Of Princeton University | Organic light emitting device |
US6303238B1 (en) | 1997-12-01 | 2001-10-16 | The Trustees Of Princeton University | OLEDs doped with phosphorescent compounds |
EP0911697A3 (en) * | 1997-10-22 | 1999-09-15 | Interuniversitair Microelektronica Centrum Vzw | A fluorinated hard mask for micropatterning of polymers |
US20020076935A1 (en) * | 1997-10-22 | 2002-06-20 | Karen Maex | Anisotropic etching of organic-containing insulating layers |
DE69840609D1 (de) * | 1997-10-22 | 2009-04-09 | Imec Inter Uni Micro Electr | Anisotropes Ätzen organischer Isolierschichten |
JPH11162652A (ja) | 1997-12-02 | 1999-06-18 | Idemitsu Kosan Co Ltd | 有機el素子およびその製造方法 |
JPH11204259A (ja) | 1998-01-09 | 1999-07-30 | Sony Corp | 電界発光素子 |
JP4147621B2 (ja) * | 1998-01-20 | 2008-09-10 | 三菱化学株式会社 | 有機電界発光素子 |
WO1999046748A1 (fr) * | 1998-03-12 | 1999-09-16 | Seiko Epson Corporation | Dispositif d'emission de lumiere a matrice active et son procede de fabrication |
CN1239396A (zh) | 1998-04-08 | 1999-12-22 | Lg电子株式会社 | 有机电致发光装置 |
JPH11312581A (ja) | 1998-04-27 | 1999-11-09 | Hokuriku Electric Ind Co Ltd | El素子とその製造方法 |
JPH11338786A (ja) | 1998-05-29 | 1999-12-10 | Pfu Ltd | 主記憶アドレスバス診断方法およびその診断装置並びに記録媒体 |
JP2000003785A (ja) * | 1998-06-15 | 2000-01-07 | Sony Corp | エレクトロルミネッセント・ディスプレイの製造方法 |
JP2000091079A (ja) | 1998-06-26 | 2000-03-31 | Tdk Corp | 有機el素子 |
JP2000040591A (ja) | 1998-07-21 | 2000-02-08 | Sony Corp | 有機電界発光素子 |
US6133693A (en) | 1998-07-30 | 2000-10-17 | Alliedsignal Inc. | Interconnects and electrodes for high luminance emissive displays |
JP3711760B2 (ja) | 1998-09-11 | 2005-11-02 | カシオ計算機株式会社 | 自発光表示装置 |
US6097147A (en) | 1998-09-14 | 2000-08-01 | The Trustees Of Princeton University | Structure for high efficiency electroluminescent device |
US6830828B2 (en) * | 1998-09-14 | 2004-12-14 | The Trustees Of Princeton University | Organometallic complexes as phosphorescent emitters in organic LEDs |
JP2000091084A (ja) | 1998-09-16 | 2000-03-31 | Trustees Of Princeton Univ | ホ―ル注入性改良電極 |
JP4269195B2 (ja) * | 1998-09-25 | 2009-05-27 | ソニー株式会社 | 発光又は調光素子、及びその製造方法 |
JP3674819B2 (ja) | 1998-09-30 | 2005-07-27 | 富士電機ホールディングス株式会社 | カラーフィルターおよび有機多色発光表示素子 |
JP4540776B2 (ja) * | 1998-11-02 | 2010-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
JP3879281B2 (ja) | 1998-11-06 | 2007-02-07 | カシオ計算機株式会社 | 表示装置及び表示装置の駆動方法 |
JP2000150168A (ja) * | 1998-11-13 | 2000-05-30 | Toppan Printing Co Ltd | 耐熱性低抵抗正孔輸送材料および有機薄膜発光素子 |
JP2000150152A (ja) | 1998-11-16 | 2000-05-30 | Toyo Ink Mfg Co Ltd | 有機エレクトロルミネッセンス表示装置 |
JP3859915B2 (ja) * | 1998-11-16 | 2006-12-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3974720B2 (ja) * | 1998-11-18 | 2007-09-12 | Tdk株式会社 | 有機el素子 |
JP2000164355A (ja) * | 1998-11-26 | 2000-06-16 | Futaba Corp | 有機el素子とその製造方法 |
JP2000227771A (ja) * | 1998-12-01 | 2000-08-15 | Sanyo Electric Co Ltd | カラーel表示装置 |
JP2000228284A (ja) * | 1998-12-01 | 2000-08-15 | Sanyo Electric Co Ltd | カラーel表示装置 |
JP2000223271A (ja) * | 1999-01-29 | 2000-08-11 | Fuji Electric Co Ltd | 有機el素子 |
JP3817081B2 (ja) * | 1999-01-29 | 2006-08-30 | パイオニア株式会社 | 有機el素子の製造方法 |
JP2000223265A (ja) * | 1999-02-02 | 2000-08-11 | Toray Ind Inc | 発光素子 |
JP4073107B2 (ja) | 1999-03-18 | 2008-04-09 | 三洋電機株式会社 | アクティブ型el表示装置 |
US7001536B2 (en) * | 1999-03-23 | 2006-02-21 | The Trustees Of Princeton University | Organometallic complexes as phosphorescent emitters in organic LEDs |
US8853696B1 (en) | 1999-06-04 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
TW527735B (en) | 1999-06-04 | 2003-04-11 | Semiconductor Energy Lab | Electro-optical device |
US7288420B1 (en) * | 1999-06-04 | 2007-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
US6310360B1 (en) * | 1999-07-21 | 2001-10-30 | The Trustees Of Princeton University | Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices |
US6641933B1 (en) * | 1999-09-24 | 2003-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting EL display device |
WO2001026425A1 (fr) | 1999-10-05 | 2001-04-12 | Matsushita Electric Industrial Co., Ltd. | Dispositif electroluminescent et procede de fabrication correspondant, et afficheur et dispositif d'eclairage comprenant ledit dispositif |
TW484117B (en) | 1999-11-08 | 2002-04-21 | Semiconductor Energy Lab | Electronic device |
TW587239B (en) | 1999-11-30 | 2004-05-11 | Semiconductor Energy Lab | Electric device |
TW493152B (en) | 1999-12-24 | 2002-07-01 | Semiconductor Energy Lab | Electronic device |
TWM244584U (en) | 2000-01-17 | 2004-09-21 | Semiconductor Energy Lab | Display system and electrical appliance |
US6780687B2 (en) | 2000-01-28 | 2004-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a heat absorbing layer |
US6559594B2 (en) | 2000-02-03 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
TW484238B (en) * | 2000-03-27 | 2002-04-21 | Semiconductor Energy Lab | Light emitting device and a method of manufacturing the same |
US7579203B2 (en) | 2000-04-25 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US6608449B2 (en) | 2000-05-08 | 2003-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Luminescent apparatus and method of manufacturing the same |
KR20010104215A (ko) | 2000-05-12 | 2001-11-24 | 야마자끼 순페이 | 발광장치 제작방법 |
US6774397B2 (en) * | 2000-05-12 | 2004-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7633471B2 (en) | 2000-05-12 | 2009-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electric appliance |
US6872604B2 (en) * | 2000-06-05 | 2005-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a light emitting device |
US7339317B2 (en) | 2000-06-05 | 2008-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device having triplet and singlet compound in light-emitting layers |
US6864628B2 (en) | 2000-08-28 | 2005-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device comprising light-emitting layer having triplet compound and light-emitting layer having singlet compound |
US7081875B2 (en) | 2000-09-18 | 2006-07-25 | Sanyo Electric Co., Ltd. | Display device and its driving method |
JP2002311901A (ja) | 2001-04-11 | 2002-10-25 | Sanyo Electric Co Ltd | 表示装置 |
KR100439648B1 (ko) * | 2001-08-29 | 2004-07-12 | 엘지.필립스 엘시디 주식회사 | 유기전계발광소자 |
US6750608B2 (en) | 2001-11-09 | 2004-06-15 | Konica Corporation | Organic electroluminescence element and display |
US6905971B1 (en) * | 2001-12-28 | 2005-06-14 | Advanced Micro Devices, Inc. | Treatment of dielectric material to enhance etch rate |
EP1338431A3 (en) | 2002-02-08 | 2003-10-01 | Fuji Photo Film Co., Ltd. | Visible image receiving material having surface hydrophilicity |
TWI328837B (en) * | 2003-02-28 | 2010-08-11 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
KR100560789B1 (ko) * | 2003-11-25 | 2006-03-13 | 삼성에스디아이 주식회사 | 풀칼라유기전계발광소자 및 그의 제조방법 |
-
2001
- 2001-08-24 US US09/938,291 patent/US6864628B2/en not_active Expired - Lifetime
-
2005
- 2005-01-31 US US11/045,311 patent/US7042151B2/en not_active Expired - Lifetime
-
2006
- 2006-03-31 US US11/393,762 patent/US7199519B2/en not_active Expired - Fee Related
-
2007
- 2007-03-26 US US11/727,309 patent/US7372199B2/en not_active Expired - Lifetime
-
2008
- 2008-04-11 US US12/081,149 patent/US8049418B2/en not_active Expired - Fee Related
-
2010
- 2010-09-21 JP JP2010210410A patent/JP2010282981A/ja not_active Withdrawn
-
2011
- 2011-10-11 US US13/270,416 patent/US8415876B2/en not_active Expired - Lifetime
-
2012
- 2012-09-14 US US13/616,035 patent/US8975813B2/en not_active Expired - Fee Related
-
2013
- 2013-11-01 JP JP2013228090A patent/JP2014027306A/ja not_active Withdrawn
-
2014
- 2014-12-10 JP JP2014250030A patent/JP2015046412A/ja not_active Withdrawn
-
2016
- 2016-09-23 JP JP2016185081A patent/JP2017022406A/ja not_active Withdrawn
-
2018
- 2018-06-08 JP JP2018110457A patent/JP6546319B2/ja not_active Expired - Lifetime
-
2019
- 2019-05-17 JP JP2019093311A patent/JP2019145844A/ja not_active Withdrawn
- 2019-07-17 JP JP2019131694A patent/JP2019176191A/ja not_active Withdrawn
-
2021
- 2021-02-26 JP JP2021030289A patent/JP2021082845A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US20050140280A1 (en) | 2005-06-30 |
US20020050786A1 (en) | 2002-05-02 |
US7199519B2 (en) | 2007-04-03 |
US8049418B2 (en) | 2011-11-01 |
JP2019145844A (ja) | 2019-08-29 |
JP2010282981A (ja) | 2010-12-16 |
JP2015046412A (ja) | 2015-03-12 |
US7372199B2 (en) | 2008-05-13 |
US20130001626A1 (en) | 2013-01-03 |
US20090115348A1 (en) | 2009-05-07 |
US20120025186A1 (en) | 2012-02-02 |
US8975813B2 (en) | 2015-03-10 |
US7042151B2 (en) | 2006-05-09 |
JP2017022406A (ja) | 2017-01-26 |
US8415876B2 (en) | 2013-04-09 |
JP2014027306A (ja) | 2014-02-06 |
US6864628B2 (en) | 2005-03-08 |
JP2019176191A (ja) | 2019-10-10 |
JP2021082845A (ja) | 2021-05-27 |
US20070170853A1 (en) | 2007-07-26 |
US20060181206A1 (en) | 2006-08-17 |
JP2018142741A (ja) | 2018-09-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6546319B2 (ja) | 携帯電話、パーソナルコンピュータ、及び表示装置 | |
JP2002151269A (ja) | 発光装置 | |
US6872604B2 (en) | Method of fabricating a light emitting device | |
US6706544B2 (en) | Light emitting device and fabricating method thereof | |
US7820464B2 (en) | Light emitting device and manufacturing method thereof | |
CN1825565B (zh) | 制造发光器件的方法 | |
KR20010039643A (ko) | 전기 광학 장치 및 전자 장치 | |
TW200304236A (en) | Light emitting device | |
JP2004145244A (ja) | 表示装置 | |
JP4675005B2 (ja) | 発光装置、電子機器 | |
JP2002050633A (ja) | 発光装置およびその作製方法 | |
JP2002033191A (ja) | 発光装置の製造方法 | |
JP2004227944A (ja) | 表示装置の製造方法 | |
JP2002305085A (ja) | 有機発光素子および前記素子を用いた表示装置 | |
JP4817535B2 (ja) | トランジスタの作製方法 | |
KR20140145701A (ko) | 유기 발광 구조물의 제조 방법 및 유기 발광 표시 장치의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180611 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20180611 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20180828 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180911 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20181108 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190109 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190319 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190517 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190618 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190620 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6546319 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
EXPY | Cancellation because of completion of term |