JP4362867B2 - 露光装置及びデバイス製造方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
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Description
δ=k2・λ/NA2 ……(2)
ここで、λは露光波長、NAは投影光学系の開口数、k1,k2はプロセス係数である。(1)式、(2)式より、解像度Rを高めるために、露光波長λを短くして、開口数NAを大きく(大NA化)すると、焦点深度δが狭くなることが分かる。投影露光装置では、オートフォーカス方式でウエハの表面を投影光学系の像面に合わせ込んで露光を行っているが、そのためには焦点深度δはある程度広いことが望ましい。そこで、従来においても位相シフトレチクル法、変形照明法、多層レジスト法など、実質的に焦点深度を広くする提案がなされている。
このように、上記従来例には、数々の改善すべき点が散見される。
以下、本発明の第1の実施形態について、図1〜図10Bに基づいて説明する。
a. 主制御装置20は、走査露光中に、前述した温度センサ38A、38Bの計測値を取り込み、前述したウエハ上の照射領域の走査方向の上流側の端部と下流側の端部との温度差ΔTを算出する。また、主制御装置20は、メモリ21内に格納されている前述したウエハ上の照射領域内における水の温度分布を演算するため情報(例えば演算式、又はテーブルデータ)を用い、算出した温度差ΔTとレンズ42の下方を流れる水の流量とに基づいて上記の水の温度分布を演算にて求める。
b. また、主制御装置20は、メモリ21内に格納されている前述の情報(例えば演算式、又はテーブルデータ)を用い、求めた水の温度分布に基づいて照射領域内の例えば走査方向の一側と他側の点におけるベストフォーカス位置の変化に対応する温度変化係数を演算する。
c. また、主制御装置20は、メモリ21内に格納されている前述のテーブルデータあるいは算出式を用い、ウエハWの走査速度、水の供給量に基づいて、照射領域内の例えば走査方向の一側と他側の点におけるベストフォーカス位置の変化に対応する圧力変化係数を演算する。
d. また、主制御装置20は、メモリ21内に格納されている、前述の収差、例えばベストフォーカス位置を算出するための算出式に、b.及びc.でそれぞれ算出した温度変化係数と圧力変化係数とを代入して、照射領域内の例えば走査方向の一側と他側の点におけるベストフォーカス位置を算出する。
e. また、主制御装置20は、d.で算出した結果に基づき、その時点における投影光学系の像面形状(像面の傾斜)を算出し、その算出結果に基づいて、焦点位置検出系の各検出点(結像光束の照射ポイント)における目標位置の設定(検出オフセットの設定)を行い、その目標値に基づいて、ウエハWのフォーカス制御及びレベリング制御を行う。すなわち、ウエハWの表面が像面とほぼ合致するように、Z・チルトステージ30及びウエハホルダ70の移動を制御する。
f. 主制御装置20は、上記a.〜e.の処理を、走査露光中、所定間隔で繰り返し行う。この結果、ウエハW上の各点は、投影光学系PLの像面に沿って駆動され、レンズ42とウエハWとの間の水の温度変化や水の流れに起因する圧力変化による、露光中のデフォーカスの発生が効果的に抑制される。
次に、本発明の第2の実施形態を図11A〜図11Fに基づいて説明する。ここで、前述した第1の実施形態と同一若しくは同等の構成部分については、同一の符号を用いるとともにその説明を簡略にし、若しくは省略するものとする。この第2の実施形態の露光装置では、主制御装置20による液体給排ユニット32を介した水の給排水の方法が、前述の第1の実施形態と異なるのみで、露光装置の構成などは、同様になっている。従って、以下では重複説明を避ける観点から相違点を中心として説明する。
《デバイス製造方法》
次に上述した露光装置をリソグラフィ工程で使用したデバイスの製造方法の実施形態について説明する。
Claims (23)
- エネルギビームによりパターンを照明し、前記パターンを投影光学系を介して基板上に転写する露光装置であって、
前記基板が載置され、該基板を保持して2次元面内で移動する基板ステージと;
前記投影光学系と前記基板ステージ上の前記基板との間に液体を供給する供給機構と;
前記液体を回収する回収機構と;
前記回収機構で回収できなかった前記液体を、前記基板に関して前記投影光学系の側から回収する補助回収機構と;を備える露光装置。 - 請求項1に記載の露光装置において、
前記基板ステージ上の前記基板の載置領域の周囲の少なくとも一部に設けられ、その表面が前記載置領域に載置された基板表面とほぼ同じ高さとなるプレートを更に備える露光装置。 - 請求項1に記載の露光装置において、
前記投影光学系と前記基板との間に局所的に液体が保持され、
前記基板ステージは、前記基板ステージに保持された前記基板の周囲に、前記基板表面とほぼ面一の平坦部を備えることを特徴とする露光装置。 - 請求項1〜3のいずれか一項に記載の露光装置において、
前記補助回収機構は、前記投影光学系に関して前記基板の移動方向の後方で残留液体を回収することを特徴とする露光装置。 - 請求項1〜4のいずれか一項に記載の露光装置において、
前記補助回収機構は、前記投影光学系に関して前記基板の移動方向の前方で残留液体を回収することを特徴とする露光装置。 - 請求項1〜5のいずれか一項に記載の露光装置において、
前記補助回収機構は、流体を吸引する吸引機構を含むことを特徴とする露光装置。 - 請求項6に記載の露光装置において、
前記吸引機構による吸引によって生じる前記液体周囲の環境変化を抑制する給気機構を更に備える露光装置。 - 請求項1〜7のいずれか一項に記載の露光装置において、
前記投影光学系は、複数の光学素子を含み、該複数の光学素子のうち最も前記基板側に位置する光学素子には、露光に使用しない部分に孔が形成され、
前記孔を介して前記液体の供給、前記液体の回収、及び気泡の回収の少なくとも一つの動作が行われることを特徴とする露光装置。 - 請求項1〜8のいずれか一項に記載の露光装置において、
前記基板ステージが停止しているときは、前記供給機構による液体の供給動作及び前記回収機構による液体の回収動作をともに停止する制御装置を更に備える露光装置。 - 請求項1〜9のいずれか一項に記載の露光装置において、
前記供給機構は、前記基板の移動方向の前方側から前記投影光学系と前記基板ステージ上の基板との間に液体を供給することを特徴とする露光装置。 - 請求項1〜9のいずれか一項に記載の露光装置において、
前記供給機構は、前記基板の移動方向の後方側から前記投影光学系と前記基板ステージ上の基板との間に液体を供給することを特徴とする露光装置。 - 請求項1〜11のいずれか一項に記載の露光装置において、
前記パターンを走査露光方式で前記基板上に転写するため、前記エネルギビームに対して前記基板ステージを所定の走査方向に駆動する駆動系を更に備える露光装置。 - 請求項12に記載の露光装置において、
前記供給機構は、前記走査方向に直交する非走査方向に関して離間した複数の供給口を有し、前記基板上の露光対象の区画領域の大きさに応じて前記複数の供給口の中から選択した少なくとも1つの供給口から前記液体の供給を行うことを特徴とする露光装置。 - 請求項1〜13のいずれか一項に記載の露光装置において、
前記投影光学系に関して前記基板の移動方向の後方で液中の気泡を回収する少なくとも一つの気泡回収機構を更に備える露光装置。 - 請求項1〜14のいずれか一項に記載の露光装置において、
前記投影光学系と前記基板との間の液体の温度情報の実測値及び予測値の少なくとも一方に基づいて露光条件の調整を行う調整装置を更に備える露光装置。 - 投影光学系の像面側に局所的に液体を保持するとともに、エネルギビームによりパターンを照明し、前記パターンを前記投影光学系と前記液体とを介して前記基板上に転写する露光装置であって、
前記基板が載置され、該基板を保持して2次元面内で移動する基板ステージと;
前記投影光学系の像面側に液体を供給する供給機構と;
前記投影光学系の投影領域の外側で前記液体を回収する第1回収機構と;
前記投影領域に対して前記第1回収機構よりも外側で前記第1回収機構と同じ側から前記液体を回収する第2回収機構と;を備える露光装置。 - 請求項16に記載の露光装置において、
前記基板ステージは、前記基板ステージに保持された前記基板の周囲に、前記基板表面とほぼ面一の平坦部を備えることを特徴とする露光装置。 - 請求項16又は17に記載の露光装置において、
前記投影領域と前記第2回収機構の回収位置との間に、前記供給機構の供給位置が配置されていることを特徴とする露光装置。 - 請求項16〜18のいずれか一項に記載の露光装置において、
前記第2回収機構は、前記投影領域を取り囲むように配置されていることを特徴とする露光装置。 - 請求項1〜19のいずれか一項に記載の露光装置において、
前記投影光学系の像面側の気体を排気する排気機構を更に備え、
前記供給機構からの液体供給は、前記排気機構による気体の排気と並行して開始されることを特徴とする露光装置。 - 請求項1〜20のいずれか一項に記載の露光装置において、
前記液体の温度情報と前記液体の圧力情報との少なくとも一方に基づいて、前記基板ステージの移動を制御する制御装置を更に備える露光装置。 - 請求項21に記載の露光装置において、
前記制御装置は、前記投影光学系によって形成される像面と前記基板表面とをほぼ合致させるように、前記温度情報と前記圧力情報の少なくとも一方に基づいて前記基板ステージの移動を制御することを特徴とする露光装置。 - リソグラフィ工程を含むデバイス製造方法であって、
前記リソグラフィ工程では、請求項1〜22のいずれか一項に記載の露光装置を用いて基板上にデバイスパターンを転写することを特徴とするデバイス製造方法。
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JP5076497B2 (ja) * | 2004-02-20 | 2012-11-21 | 株式会社ニコン | 露光装置、液体の供給方法及び回収方法、露光方法、並びにデバイス製造方法 |
US9152058B2 (en) | 2003-06-09 | 2015-10-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method involving a member and a fluid opening |
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